TWI275189B - Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component - Google Patents

Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component Download PDF

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Publication number
TWI275189B
TWI275189B TW093136555A TW93136555A TWI275189B TW I275189 B TWI275189 B TW I275189B TW 093136555 A TW093136555 A TW 093136555A TW 93136555 A TW93136555 A TW 93136555A TW I275189 B TWI275189 B TW I275189B
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Taiwan
Prior art keywords
semiconductor
radiation
component
semiconductor wafer
plastic
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Application number
TW093136555A
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English (en)
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TW200525785A (en
Inventor
Joerg Erich Sorg
Herbert Brunner
Harald Jaeger
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication date
Priority claimed from DE2003161801 external-priority patent/DE10361801A1/de
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200525785A publication Critical patent/TW200525785A/zh
Application granted granted Critical
Publication of TWI275189B publication Critical patent/TWI275189B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L2224/481—Disposition
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Description

1275189 九、發明說明： 【發明所屬之技術領域】 - 本發明涉及一種發射輻射及/或接收輻射的半導體元件， 其包含：一種發射輻射及/或接收輻射的半導體晶片；一種 塑料-成型件，其對由該半導體元件所發出-及/或接收之電 磁輻射而言是可透過的且藉由該塑料-成型件使該半導體晶 片之至少一部份被變型；及外部之電性終端，其在電性上 是與該半導體晶片之電性接觸面相連接。此外，本發明亦 涉及此種半導體元件之製造方法。 【先前技術】 上述之半導體元件例如由W0 01/50540中已爲人所知。在 該文件中所述之元件中一種半導體晶片安裝在一種導線架 上。該半導體晶片和該導線架之一部份區域以一種濺鍍壓 製之塑料-成型體來包封。該導線架外部之電性終端由該塑 料-成型體凸出。該塑料-成型體例如由一種環氧樹脂所製成 且可包含無機-或有機轉換材料和塡料。
另一種形式之光電組件例如已描述在WO 99/07023中，其 中一導線架（其上存在著半導體晶片）以一種外殼基體來變 型，該外殻基體具有一種反射器形式之凹口。在該凹口中 配置著該半導體晶片。在安裝該半導體晶片之後該凹口中 以一種可透過輻射-且通常是透明之澆注物質來塡入以達到 至少使該半導體晶片和可能存在之由晶片至導線架之連結 線都由該澆注物質所包封。上述構造形式之習知之澆注物 質例如是一種透明之環氧樹脂。類似之構造形式例如由WO 1275189 98/ 1 27 57中已爲人所知。 US6 27 4924B1中描述一種可表面發射之LED-外殻構造形 式，其中一固定之塑料體中以一種可透過輻射之軟性包封 材料（例如，矽樹酯）來塡入，半導體晶片配置在該塑料體中 且在電性上是與導線架之外部電性終端相連接。一種透鏡 ： 蓋設定在該塑料體上。該透鏡蓋一方面可使該包封材料有 ： 一種確定之形式且另一方面可防止該包封材料由該外殻基 體流出。由於該外殻有較多數目之組件，則此種LED-外殻 構造形式需要較大之製造成本。 φ 【發明內容】 本發明之目的是進一步形成上述形式之半導體元件，使其 一方面在技術上能以較簡易之方式製成且另一方面特別是 在使用各種發出藍光或紫外線（UV)輻射之半導體晶片時具 有足夠之老化穩定性。 上述目的藉由一種具有申請專利範圍第1項特徵之半導 體元件和一種具有申請專利範圍第9項特徵之方法來達 成。該半導體元件之有利之其它形式描述在申請專利範_ · 第2項至第8項中。 本發明之發出輻射及/或接收輻射之半導體元件包含以下 〜 各種組成： ： -一種發出輻射及/或接收輻射之半導體晶片， -一種特別是以濺鍍澆注-或濺鍍壓製而製成之塑料-成型 件，其對一由半導體元件所發出及/或接收之電磁輻射而育 是可透過的，藉由該塑料-成型件使該半導體晶片之至少〜 1275189 部份被變型且該塑料-成型件由可反應而硬化之矽樹脂-成 型物質所構成；及 -外部之電性終端，其在電性上是與該半導體晶片之電性 接觸面相連接。 目前所謂矽樹脂-成型物質不只包含只由矽樹脂所構成之 成型物質，而且亦包含各種可藉由模製（Mo Id)過程而加工成 塑料·成型件之成型物質，這些成型物質中之一種成份是由 矽樹脂所構成，使該成型物質之老化穩定性相對於傳統之 成型物質而言可獲得足夠之改良。 矽樹脂-成型件較佳是具有一種等於或小於1〇分鐘之硬 化時間。這樣可有利地使該半導體元件之製造較簡易且可 達成經濟上有意義之機械-行程時間。 矽樹脂-成型件在硬化狀態時較佳是具有等於或大於65 Shore D之硬度。因此，該塑料-成型件相對於機械影響所造 成之成型穩定性可有利地獲得改良。 又，該成型物質較佳是一種矽樹脂-合成材料，其除了矽 樹脂之外包含至少另一種材料’例如，環氧樹脂。此種合 成材料之優點是：其可依據各別應用-和所使用之過程之需 求來調整。矽樹脂-環氧樹脂·合成材料例如通常可較純矽樹 脂成型物質更快速地硬化且具有較高的機械強度。由於此 一原因，其大部份可較簡易地用來進行釋模（molding release) 且加工時間可較短。 爲了製成一種發出混合光之半導體元件，該矽樹脂-成型 件須包含一種轉換材料，其吸收第一波長區域之由半導體 1275189 晶片所發出及/或由半導體元件所接收之電磁輻射之至少一 部份且發出一種來自第二波長區域之電磁輻射，第二波長 區域不同於第一波長區域。特別是無機發光材料粉能以簡 單之方式混合至矽樹脂材料中，與此相關之無機發光材料 較7例如可稱爲鈽（C e)搶雜之銘銘石樞石粉和鈽（c e)摻雜之 铽（Tb)鋁石榴石粉。其它適當之無機發光物質例如描述在 W〇0 1 /50540 A1和W〇9 8/ 1 27 5 7 A1中，其已揭示之內容此 處作爲參考。 本發明之塑料-成型件較佳是用在具有半導體晶片之半導 體兀件中’該半導體晶片發出藍色-或紫外線之光譜區域中 之電磁輻射。 在較佳之實施形式中，唯一之單件式塑料-成型件之半導 體晶片是由可反應而硬化之矽樹脂-成型物質所製成。此種 塑料-成型件之基本原理例如已描述在文件WO 0 1/50540 中，其已揭示之內容此處作爲參考。 在另一較佳之實施形式中，半導體晶片施加在一種載體基 板上或一種載體箔上，其上之電性導電軌用來與半導體晶 片作電性上之連接，且半導體晶片是以一種由可反應而硬 化之矽樹脂-澆注物質所構成之塑料-成型件來包封。 在本發明之半導體元件之一種較佳之製造方法中，該半導 體晶片固定在一種導線架上，該導線架具有外部電性終端 且在電性上是與各外部電性終端相連接。該半導體晶片及 該導線架之一部份區域然後藉由一種濺鍍澆注方法或藉由 一種濺鍍壓製方法而以一種矽樹脂-成型物質來變型。 1275189 在另一有利之方法中’半導體晶片施加在一種載 或一種載體箔上’其上之電性導電軌用來與半導 電性上之連接’且半導體晶片在電性上是與導> 接。然後藉由一種濺鍍澆注方法或藉由一種濺鍍 以矽樹脂-成型物質使半導體晶片包封在載體基板 范上。 本發明特別是可用在發出輻射及/或接收輻射之 件中，該半導體晶片之設疋面之大小大約是0.5 mr 或更小及/或整個構件高度只有350 // m或更小，較 # m或更小。 【實施方式】 本發明有利之其它形式和優點描述於第1至3圖 實施例中。 不同之實施例中相同或作用相同之組件分別以 考符號來表示。各圖式基本上未以相同之比例來 別之構件基本上亦未以實際之大小比例來顯示。 第1圖之第一實施例是一種以導線架爲主之發 發光二極體組件。 金屬導線架10(其上在一種晶片安裝區16中安！ 晶片1)是以一種透明之矽樹脂-成型物質3來變型 一導線架終端Π，1 2由二個互相面對之側面凸出 架終端1 1，12是該發光二極體組件之外部電性終 透明之矽樹脂-成型物質3之內部中每一導線架終 都具有一種由晶片安裝區16至該發光二極體組件 體基板土 體晶片作 電軌相連 壓製方法 上或載體 半導體元 η X 1.0 mm 佳是250 中所示之 相同之參 繪製。各 出白光之 装著LED-，分別有 。各導線 端。在該 端 1 1，12 之安裝側 1275189 13之S-形之彎曲14，15。 _ 該矽樹脂-成型物質3可混合至少一種無機塡料（例如， T i〇2，Z r〇2或a - A12〇3)以提高折射率。 在第1圖之發光二極體-光源之製造方法中，該LED_晶片 1在晶片安裝區1 6中安裝在導線架10上且與導線架終端 ： 11，12導電地相連接。各導線架終端11，12在該半導體LED- : 晶片1安裝之前或之後設有S-形之彎曲14，15。該半導體 LED-晶片1及該導線架1〇之S-形之彎曲14，15藉由濺鍍 澆注方法或濺鍍壓製方法而以透明之矽樹脂-成型物質3來春 變型。該矽樹脂-成型物質3然後至少一部份硬化成濺鍍澆 注形式或濺鍍壓製形式，以形成一種形式足夠穩定之單件 式塑料-成型件5。 在一種白光源中該半導體LED-晶片1具有一種發射光 譜’其位於紫外線或藍色光譜區域中。該半導體LED-晶片 1較佳是以GaN或InGaN爲主而構成，但其亦可另外由材 料系統ZnS/ZnSe所構成或由適用於上述光譜區之其它材料 系統所構成。 鲁 在施加該半導體LED-晶片1且進行接觸之後，在一適當 之濺鍍澆注設備或濺鍍壓製設備中使一種透明之矽樹脂-成 / 型物質3濺鍍至導線架終端1 1，12上。發光物質微粒4埋 ： 入至矽樹脂-成型物質3中，各發光物質微粒4由一種轉換 材料所構成，藉此使由該半導體LED-晶片1所發出之電磁 輻射之至少一部份波長被轉換。藉由此種波長轉換而產生 一種發射光譜，其能以光學方式而引入一種白光源。發光 -10- 1275189 物質微粒用之適當之發光材料例如可爲鈽（Ce)摻雜之釔鋁 石榴石粉和鈽（Ce)摻雜之铽（Tb)鋁石榴石粉。 導線架10之預製和以該矽樹脂-成型物質3(其在情況需要 時含有發光物質微粒4和其它之塡料）來進行之變型是以下 述方式來達成：導線架區段11，12在水平方向中由塑料-成型件5伸出，且其焊接-連接面11 A和1 2 A基本上位於與 該塑料-成型件5之背側相同之平面中，該背側通常是指一 電路板上該元件之接觸面。各導線架終端1 1，1 2在澆注之 前已彎曲成一種確定之形式，其因此在變形之前具有一由 晶片連接區彎曲至安裝面之S-形之彎曲，使得在變形之後 不再有彎曲應力發送至該元件上。這特別是在具有小體積 之塑料-成型件5之已很小型化之元件中特別有利，因爲此 時在湊注物質和導線架之間發生脫層（D e 1 a m i n a t i ο η)時（其 例如由彎曲應力所觸發）存在一種很大之危險性：已製成之 構件不能達成一種不透氣之密封性。 矽樹脂··成型物質3例如具有一種等於或小於1 0分鐘之硬 化時間且在硬化狀態時具有一種等於或大於65 Shore D之 硬度。 已製成之元件可有利地以再流法（Reflow method)焊接至 電路板上之平坦之水平連接面1 1A，12A上。於是可製成一 種適用於表面安裝技術之元件。 以相同之方式可形成一種偵測紫外線-或藍色輻射所用之 光二極體元件。 第2圖之第二實施例不同於第1圖之第一實施例之處是： -11- 1275189 其未設有導線架1 〇而是設有一種電性絕緣之承載基板 100，其具有金屬層形式之導電軌111，112。該塑料-成型 件5存在於該承載基板1 〇〇上。該元件能以類似於第一實施 例之方式製成。 第3圖之第三實施例是一種小型電致發光二極體，其包 ： 含：一可撓性之導線架10 ; — LED-晶片1，其具有一種發 ： 出輻射之活性區；一塑料-成型件5。該可撓性之導線架1〇 由一種60 // m厚之金屬箔101和一種同樣是60 // m厚之 塑料箔1 0 2所構成，此二種箔高準確性地互相黏合著。該鲁 塑料箔可由一種矽樹脂-塑料所構成。 須對該金屬箔1 0 1進行沖製，使其界定一種陰極和一種陽 極。分別經由陰極和陽極而在該塑料箔1 02中沖製多個凹 口。該LED-晶片1以其下側經由各凹口之一而連結至該陰 極。該陽極在連結線2上經由另一凹口而與該LED-晶片1 之上側相連接。 爲了可在該可撓性之框架上製成儘可能多之構件，則例如 須使用所謂空腔-至-空腔模（molding)來進行包封，藉此可在 W 每一可撓性之導線架1 0上製成一種塑料-成型件5，其包封 著該LED-晶片1和該連結線2。由於有一濺鍍通道經由各 構件而導通，則濺鍍通道之數目可下降。該塑料·成型件由 * 一與上述實施例之塑料-成型件相同之材料所構成。 此外，各構件亦能以一種陣列-模（molding)-方法來包封。 在陣列-模中對該工件之空腔進行塡充，各空腔分別包含多 個構件。已濺鍍之構件在各成型件冷卻之後例如藉由切鋸 -12- 1275189 而被分離。陣列-模中之面積密度通常可有利地較空腔-至-空腔模中之面積密度還大。 . 整體而言小型電致發光二極體之設定面之大小大約是0.5 mmXl.〇mm且整個構件高度只有250 //m。 本發明之在上述說明書中’圖式中或申請專利範圍中已揭 示之特徵可單獨地或以任意組合之方式來實現本發明，這 是很重要的。亦可使用光二極體晶片以价 W取代電致發光二極 種晶片可操作成電致發％ 極體或光二極 體晶片，或 體。 【圖式簡單說明】 第1圖第一實施例之切面圖。 第2圖第二實施例之切面圖。 第3圖第三實施例之切面圖。 【主要元件之符號說明】 1 L E D -晶片 2 連結線 3 矽樹脂-成型物質 4 發光物質微粒 5 塑料-成型件 10 導線架 11 導線架-終端 1 1 A 焊接-連接面 12 導線架-終端 12A 焊接-連接面 -13- 1275189 13 安裝側 14，15 s-形之彎曲 16 晶片安裝區 100 電性絕緣之載體基板 101 金屬箔 102 塑料箔 111 導電軌 112 導電軌 -14-

Claims (1)

  1. Ι2γ75+89
    $月丨曰修〔袁)正本 $ 3 13^ΤΓ5號1發"射輻射及/或接收輻射的半導體元件及. 其製造方法」專利案 (2006年8月修正） 十、申請專利範圍： 1 . 一種發射輻射及/或接收輻射的半導體元件，其包含：一 種發射輻射及/或接收輻射的半導體晶片；一種塑料-成 型件，其對由該半導體元件所發出-及/或接收之電磁輻 射而言是可透過的且藉由該塑料-成型件使該半導體晶片 之至少一部份被變型；及外部之電性終端，其在電性上 是與該半導體晶片之電性接觸面相連接，其特徵爲： 該塑料-成型件由一種可反應而硬化之矽樹脂-成型物質 所構成。 2 ·如申請專利範圍第1項之半導體元件，其中該矽樹脂-成 型物質具有一種等於或小於1 0分鐘之硬化時間。 3 ·如申請專利範圍第1或2項之半導體元件，其中該矽樹 脂-成型物質在硬化狀態時具有一種等於或大於6 5 S h 〇 r e D之硬度。 φ 4.如申請專利範圍第1或2項之半導體元件，其中該矽樹 月旨-成型物質是一種矽樹脂-合成材料。 · 5 ·如申請專利範圍第1或2項之半導體元件，其中該矽樹 月旨-成型物質包含一種轉換材料，其吸收第一波長區域之 由該半導體晶片所發出-及/或由該半導體元件所接收之 電磁輻射且發出一種來自第二波長區域之電磁輻射，第 二波長區域不同於第一波長區域。 1275189 6 ·如申請專利範圍第1或2項之半導體元件，其中該半導， 體晶片發出藍色-或紫外線光譜區域之電磁輻射。 7 ·如申請專利範圍第1或2項之半導體元件，其中該半導 體兀件具有一種0.5 mmXl.O mm或更小之設定面。 8 ·如申請專利範圍第1或2項之半導體元件，其中該半導 體元件具有3 5 0 // m或更小之總構件高度，較佳是2 5 0 // in或更小。
    9. 一種如申請專利範圍第1至6項中至少一項之半導體元 件之製造方法，其特徵爲： -該半導體晶片固定在一種金屬導線架，載體基板或載體 箔上且具有外部之電性終端， -該導線架，載體基板或載體箔之一部份區域及該半導體 晶片施加至一濺鍍模之空腔中， -該矽樹脂·成型物質藉由濺鍍澆注法或藉由濺鍍壓製法 而濺鍍至空腔中，及
    -該矽樹脂-成型物質在該空腔中至少須被硬化，以形成 一種形式穩定之塑料-成型件。
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102006032416A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102007050608A1 (de) * 2007-10-23 2009-04-30 Infineon Technologies Ag Gehäuse für einen Halbleiter-Chip
DE102008024704A1 (de) 2008-04-17 2009-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
DE102008044847A1 (de) * 2008-08-28 2010-03-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5383611B2 (ja) * 2010-01-29 2014-01-08 株式会社東芝 Ｌｅｄパッケージ
KR101725220B1 (ko) * 2010-12-22 2017-04-10 삼성전자 주식회사 형광체 도포 방법 및 형광체 도포 장치
DE102011115150A1 (de) 2011-09-27 2013-03-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden Halbleiterbauteils und Halbleiterbauteil
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US20130187540A1 (en) 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
DE102013220960A1 (de) * 2013-10-16 2015-04-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
DE102015105661B4 (de) 2015-04-14 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung mit einer Mischung aufweisend ein Silikon und ein fluor-organisches Additiv
CN107946377A (zh) * 2017-11-22 2018-04-20 深圳成光兴光电技术股份有限公司 一种贴片式红外线接收管
EP3499560B1 (en) * 2017-12-15 2021-08-18 Infineon Technologies AG Semiconductor module and method for producing the same
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3444440A (en) 1964-11-27 1969-05-13 Motorola Inc Multiple lead semiconductor device with plastic encapsulation supporting such leads and associated elements
US3971747A (en) * 1975-04-11 1976-07-27 Dow Corning Corporation Curable compositions
GB2104827B (en) * 1981-07-01 1985-09-11 Kras Corp Molding of electronic components
JPS59107584A (ja) * 1982-12-13 1984-06-21 Casio Comput Co Ltd 発光ダイオ−ド
FR2645680B1 (fr) * 1989-04-07 1994-04-29 Thomson Microelectronics Sa Sg Encapsulation de modules electroniques et procede de fabrication
JPH04111366A (ja) 1990-08-30 1992-04-13 Kyocera Corp 画像装置
JP3338473B2 (ja) 1992-05-26 2002-10-28 シャープ株式会社 光学装置の製造方法
JP2894921B2 (ja) * 1993-04-30 1999-05-24 シャープ株式会社 半導体装置およびその製造方法
JP3535602B2 (ja) * 1995-03-23 2004-06-07 松下電器産業株式会社 面実装型ｌｅｄ
JP3992301B2 (ja) * 1995-04-26 2007-10-17 シチズン電子株式会社 チップ型発光ダイオード
JP3271645B2 (ja) 1995-06-08 2002-04-02 日亜化学工業株式会社 窒化物半導体発光ダイオード
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
US6088901A (en) * 1997-06-10 2000-07-18 Siemens Aktiengesellschaft Method for producing a carrier element for semiconductor chips
DE29825022U1 (de) 1997-07-29 2004-04-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP3173586B2 (ja) * 1998-03-26 2001-06-04 日本電気株式会社 全モールド型固体撮像装置およびその製造方法
JPH11354673A (ja) * 1998-06-05 1999-12-24 Toshiba Microelectronics Corp 半導体装置
JP3857435B2 (ja) 1998-08-31 2006-12-13 ローム株式会社 光半導体素子、光半導体素子の実装構造、および光半導体素子群の包装構造
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
DE19963806C2 (de) 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Leuchtdioden-Weißlichtquelle, Verwendung einer Kunststoff-Preßmasse zum Herstellen einer Leuchtioden-Weißlichtquelle und oberflächenmontierbare Leuchtdioden-Weißlichtquelle
JP3609709B2 (ja) 2000-09-29 2005-01-12 株式会社シチズン電子 発光ダイオード
JP4101468B2 (ja) 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
JP2003051618A (ja) 2001-08-06 2003-02-21 Rohm Co Ltd チップ型半導体発光装置
JP4045781B2 (ja) * 2001-08-28 2008-02-13 松下電工株式会社 発光装置
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
DE10214119A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE10228634A1 (de) * 2002-06-26 2004-01-22 Osram Opto Semiconductors Gmbh Oberflächenmontierbare Miniatur-Lumineszenz-und/oder Photo-Diode und Verfahren zu deren Herstellung
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method

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