TWI273712B - A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes - Google Patents
A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes Download PDFInfo
- Publication number
- TWI273712B TWI273712B TW094147579A TW94147579A TWI273712B TW I273712 B TWI273712 B TW I273712B TW 094147579 A TW094147579 A TW 094147579A TW 94147579 A TW94147579 A TW 94147579A TW I273712 B TWI273712 B TW I273712B
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Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract 4
- 239000010410 layer Substances 0.000 claims description 138
- 239000010409 thin film Substances 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 2
- 241000233805 Phoenix Species 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 229910004304 SiNy Inorganic materials 0.000 description 1
- 229910010421 TiNx Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Ϊ273712 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種液晶顯示I置用下基板之f作方 法，尤指一種利用三道光罩製程製作之液晶顯示裝置用下 基板之製作方法。 用下 【先前技術】 液晶顯示裝置相較於傳統的映像管監視器，具有低耗 電量、體積小及無輕射的優點。然而薄膜電晶體液晶顯示 ω器（TFT-LCD)的價格昂貴，尤其是在液晶顯示器薄膜電 晶體陣列的微影步驟製程上，因為無法有效地將所需光罩 數盡可能地降低，而錢盡—步的降低製造成本。 習知的薄膜電晶體陣列基板製造方法中，較常見的是 五道光罩（微影姓刻）製程。其中，第一道光罩製程是用 15來定義第一金屬層，以形成掃描配線以及薄膜電晶體之閉 極等構件。第二道光罩製程是定義出薄膜電晶體之通道層 以及歐姆接觸層。第三道光罩製程是用來定義出第二金屬 層，以形成資料配線以及薄膜電晶體之源極/汲極等構件。 第四道光罩製程是用來將保護層圖案化。而第五道光罩製 20程是用來將透明導電層圖案化，而形成畫素電極。 然而，隨著薄膜電晶體液晶顯示器朝大尺寸製作的發 展趨勢，而將會面臨許多的問題，例如良率降低以及產能 下降等等。因此若是能減少薄膜電晶體製程的使用光罩 1273712 數即降低薄膜電晶體元件製作之曝光工程次數，就可以 減少製造時間，增加產能，進而降低製造成本。 目刖在薄膜電晶體液晶顯示面板的製造上，由於微影 製程非常昂貴，因此亟需要能將光罩道次減少為三道 5之薄膜電晶體陣列基板製程。 【發明内容】 本發明提供之液晶顯示裝置用下基板之製造方法，相 對於先前技藝，可以減少製程所需要使用之光罩數目，簡 1〇化製程步驟，降低製程成本。 因此，本發明提供一種液晶顯示裝置用下基板之製造 • #法，包括以下之步驟··提供-基板；於該基板上形成一 圖形化第-金屬層，-絕緣層，以及一半導體層，其中該 圖形化第-金屬層係位於該絕緣層及該基板之間；於該半 15導體層i方形成一第二金屬於該第二金屬層塗覆一光 阻；利用-次曝光顯影製程使該光阻具有第一厚度及第二 • #度，^該第—厚度與該第二厚度不相同；㈣該光阻以 及該第二金屬層，以形成圖形化第二金屬層，該圖形化第 -金屬層並具有第二厚度及第四厚度，且該第三厚度與該 20第四厚度不相同；於該第二金屬層上塗覆—高分子層，·照 光硬化該南分子層，以形成一平坦層；钱刻該平坦層以暴 路部分該圖形化第二金屬層；於該平坦層及該圖形化第二 金屬層表面形成一圖形化之透明電極層。 6 1273712 藉此’本發明僅需要三道光罩製程，即可製作液晶顯 不裝置用下基板。由於曝光工程次數降低，故可以減少製 造時間，增加產能，進而降低製造成本。另外，本發明之 方法亦可適用於任何形狀之源極/汲極設計之液晶顯示裝 5置用下基板。
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本發明之方法，其更包含一步驟係於該圖形化第二金 屬層形成後’先形成-保護層於該圖形化第二金屬層表 面。本發明方法’其更包含一步驟係於高分子層硬化後， 先移除未硬化之高分子層。本發明之方法，其中步驟（F) 钱刻方式可為任何_方式，較佳為乾似彳或錢刻。本 發明之方法’其中該步驟⑴姓刻方式可為任何姓刻方式， 較佳為乾㈣。本發明之方法，其中曝光可為任何用於曝 光之光源’較佳為照射紫外光。本發明之方法，其中照光 可為任何用於照光之光源，較佳為照射紫外光。本發明之 方法’其中部分第一金屬層為一薄膜電晶體之閘極，部分 第一金屬層為-輔助電容之-電極。本發明之方法，其中 部分第二金屬層為-辅助電容之—電極，部分第二金屬層 為薄膜電晶體之-源極或-沒極。本發明之方法，直中美 板可為任何薄膜電晶體之基板，較佳為玻^本發明之二 =其中絕緣層可為任㈣膜電晶體之絕緣層，較佳為氧 =或氮切。本發明之方法，其中半導體層可為任何薄 臈電晶體之半導體層，較佳為非晶石夕層。本發明之方法， 其更包含-步驟’係於半導體層表層形成一歐姆接觸層， 且錢姆接觸層較佳為N+非晶石夕層。本發明之方法，豆中 7 '1273712 透明電極層可任何於液晶顯示裝置之透明電極層，較佳為 IZO層或ITO層。本發明之方法中，該圖形化第二金屬層之 第二厚度與第四厚度之尚度差不限定，較佳為約1000埃。 5【實施方式】 實施例一 請參閱圖1(a)至1(h)，為本發明實施例一之方法流程示 意圖。 本實施例方法所形成之薄膜電晶體（TFT)為島狀底部 10閘極型（bottom gate)型薄膜電晶體。如圖1(a)所示，首先提 供一基板30，其中基板3〇可為玻璃、石英或塑膠。接著， 依序於基板30上形成一圖形化第一金屬層32、一絕緣層 34、一半導體層36以及一歐姆接觸層％。其中，第一金屬 層32作為薄膜電晶體（TFT)的閘極，另外還有部分第一金屬 15層32為一辅助電容之一電極。此第一金屬32之材料可為鋁 (A1)鶴（W)、鉻（cr)、銅（cu)、鈦（τι)、氮 ，鈦（TiNx)、鋁合金、鉻合金或鉬（M〇)金屬所構成之 單層或多層結構。絕緣層34可為氧化矽（SiOx)、氮化矽 (SiNy)或氮氧化矽（SiHc〇n 〇xynitride)。半導體層％ 2〇可為非晶石夕層（〇uSi，am〇rph〇us silic⑽）。歐姆接觸層Μ 可由摻雜半導體，例如n+_si (η切e dGped silieGn)二構 成。 接著’如圖1(b)所示，在歐姆接觸層38上方依序形成 一第一金屬層42以及_第一光阻層料，並且，利用半調光 8 1273712 罩100對第一光阻層44進行曝光與蝕刻，使第一光阻層44 產生高低差。因此，在下基板中，接觸區60之高度較下基 板的其他部分為高。在本實施例中光阻44具有第一厚度（dl) 及第二厚度（d2)，且第一厚度較第二厚度小（參閱圖 5 1(c))。 由於半調光罩100的利用，使第一光阻層44可以達成同 一光罩曝光顯影製程即形成兩個不同區域厚度之凹凸狀光 阻層之目的。然後，再對第一光阻層44進行蝕刻就可形成 具有兩個不同區域厚度之凹凸狀第二金屬層42。第二金屬 10層42之材料如同第一金屬層32，可為鋁、鎢、鉻、銅、鈦、 氮化鈦、鋁合金、鉻合金或鉬金屬所構成之單層或多層結 構。本實施例之曝光光源為紫外光。 接著，如圖1(d)所示，蝕刻第一光阻層44以及第二金 屬層42，以形成圖形化第二金屬層42。圖形化第二金屬層 15 42具有第三厚度（d3)及第四厚度_，且第三厚度⑷）小於 第四厚度（d4)，藉此，使第二金屬層42形成一高度差（d)， 進而使下基板的接觸區6〇之高度較下基板的其他部分為 高。在本實施例中，第二金屬層42之高度差（句約為ι〇〇〇Α， 並且預定作為接觸區60之第二金屬層42高度為最高。在本 20實知例中，圖形化第二金屬層42之部分第二金屬層可作 為輔助電谷之另一電極，部分第二金屬層可作為薄膜電晶 體之源極或沒極。 接著’如圖1(e)所示，於第二金屬層42上形成一保護 層46。然後，在於保護層私上塗覆一層平坦之第二光阻層 1273712 高分子層光阻 阻層材料可為 48並照光硬化，其巾該第二絲層材料可為 或有機材料（參_ HO)。本實施例之第二光 高流動性光阻。 如圖1(g)所示 露部分第二金屬層42。由於第二金屬回：暴 高。因此，全面性回―二金==最 觸區60之部分第二金屬層42會先露出。在本實：：：為接 10 化後之第二光阻層简保護層46㈣刻選擇比為p ^ 以接觸到第二金屬層42為㈣終點，而定義出接觸窗 62(contact hole) 〇 丨於接觸區60的位置最高，因此，在本實施例中可利 用全面性回餘使位於接觸區6〇之第二金屬層44暴露出來形 成接觸窗62,而不需要再經由黃光微影製程來定義接觸窗。 15 然:後，去除殘存的第二光阻相(硬化之光敏高分子 層），殘存的第二光阻層48下的保護層46依然:存在。如圖咕) • 所示’於保護層46及接觸窗62(第二金屬層44表面露出部分) 上形成-圖形化之透明電極層5〇。此透明電極層可為ιζ〇 層或ITO層。 20 本實施例所提供之製造方法僅需進行三道光罩的微 影、姓刻等圖案化製程，來完成液晶顯示裳置用下基板的 製作，將達到基板良率提升的效果，其應用於各式液晶顯 示裝置更達到確保顯示品質的效益。 25 實施例二 1273712 本實施例方法之步驟、材料均與實施例一相同，除薄 膜電晶體之源極/汲極形狀不同於實施例一。本實施例之薄 膜電晶體為U型（U type)之薄膜電晶體。藉本發明方法所形 成U型薄膜電晶體以及其他相關元件，可以再有效增加薄 膜電晶體的I〇n電流，以及開口率。同樣的，本實施例之製 仏方法僅需進行三道光罩的微影、㈣等圖案化製程，來 完成液晶㈣裝置訂基板的製作，並達到基板良率提升 的效果，其應用於各式液晶顯示裝置更達到 10 而舉例而已，本發明所 圍所述為準，而非僅限 上述實施例僅係為了方便說明 主張之權利範圍自應以申請專利範 於上述實施例。 【圖式簡單說明】 15圖i(a)〜(h)係本發明一較佳實施例之方法节浐圖 【主要元件符號說明】 基板30 半導體層36 第一光阻層44 透明電極層50 半調光罩1 〇 〇 第一金屬層32 姆接觸層3 8 保護層46 接觸區60 絕緣層34 第二金屬層42 第一光阻層48 接觸窗62 11 20
Claims (1)
- • 1273712 十、申請專利範圍： 包括以下 1· 一種液晶顯示裝置用下基板之製造方去 之步驟： (A) 提供一基板； (B) 於該基板上形成一圖形化第一 ^ t屬層、一絕緣層以 及一半導體層，其中該圖形化第一 +凰 步金屬層係位於該絕緣層 及該基板之間； (C) 於該半導體層上方形成一第二金屬層； (D) 於該第二金屬層塗覆—光阻； 10 (E)利用一次曝光顯影製程使該光阻具有第一厚度及 第二厚度’且該第一厚度與該第二厚冑不相同； (F)蚀刻該光阻以及該第二金屬層，以形成圖形化第二 金屬層，該®形化第二金屬層並具有第三厚度及第四厚 度，且該第二厚度與該第四厚度不相同； 15 (G)於該圖形化第二金屬層上塗覆一高分子層； (H) 照光硬化該高分子層，以形成一平坦層； (I) 触刻該平坦層以暴露部分該第二金屬層；以及 ⑴於該平坦層及該圖形化第二金屬層表面形成一圖 形化之透明電極層。 20 2.如申請專㈣圍第1項所述之方m包含一步 驟係於該圖形化第二金屬層形成後，先形成一保護層於該 圖形化第二金屬層表面。 3.如申請專利範圍第1項所述之方法，其中該步驟 (F ) #刻為乾蝕刻或濕蝕刻。 12 i273712 5 10 15 4·如申請專利範圍第丨項 照射絷外光。 ^ <方法，其中該曝光係 5·如申請專利範圍第丨項所 一金屬s糸 β ^ 疋之方法，其中部分該第 屬層為一溥膜電晶體之閘極。 6·如申請專利範圍第1項所4 第〜I M m 、斤述之方法，其中部分該 I屬層為一辅助電容之一電極。 7·如申請專利範圍第丨項所 第二金屬層為一辅助電容之一電極迷之方法…部分該…8· #申請專利範圍第1項所述之方法， (工）蝕刻為乾蝕刻。 9·如申請專利範圍第1項所述 為坡螭。 〖疋之方法， 10.如申請專利範圍第i項所述 層為氧化矽或氮化矽。 '’ H·如申請專利範圍第丨項所述之方法， 其中該步驟 其中該基板 其中該絕緣 第二金屬層為—薄膜電晶體之—源極或-沒極 其中部分該 ---〇 12. 如申請專利範圍第1 體層為非_層。 項所奴方法，其中該半導 13. 如申請專利範圍第丨項所述之 2〇步驟，係於該半導體層表層形成歐姆接觸#一 接二如:請專利範圍第12項所述之方二，其中該歐姆 接觸層為N+非晶矽層。 15.如申請專利範圍第i項所 電極層為IZO層或IT〇層。 力/、中.亥透明 13 ' 12737121 6 ·如申請專利範圍第1項所述之方法，其中該曝光 顯影製程中，係使用半調光罩。 1 7 .如申請專利範圍第1項所述之方法，其中該第三 厚度與該第四厚度相差約1000埃。 14
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| JP2006341273A JP4553392B2 (ja) | 2005-12-30 | 2006-12-19 | 液晶ディスプレイ用ボトム基板の製作方法 |
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| JPH11352515A (ja) * | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
| KR100372306B1 (ko) * | 1998-11-19 | 2003-08-25 | 삼성전자주식회사 | 박막트랜지스터의제조방법 |
| KR100333979B1 (ko) * | 1999-04-26 | 2002-04-24 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
| JP3548711B2 (ja) * | 2000-09-25 | 2004-07-28 | シャープ株式会社 | 液晶用マトリクス基板の製造方法ならびにコンタクトホール形成方法 |
| TW546853B (en) * | 2002-05-01 | 2003-08-11 | Au Optronics Corp | Active type OLED and the fabrication method thereof |
| JP2004311520A (ja) * | 2003-04-02 | 2004-11-04 | Advanced Display Inc | 表示装置の製造方法 |
| KR100984823B1 (ko) * | 2003-10-21 | 2010-10-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
| KR101086478B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
| TWI279918B (en) * | 2005-06-29 | 2007-04-21 | Quanta Display Inc | A method for forming a liquid crystal display |
| KR20070045824A (ko) * | 2005-10-28 | 2007-05-02 | 삼성전자주식회사 | 박막 트랜지스터, 표시판 및 그 제조 방법 |
-
2005
- 2005-12-30 TW TW094147579A patent/TWI273712B/zh active
-
2006
- 2006-12-15 US US11/639,189 patent/US7435632B2/en active Active
- 2006-12-19 JP JP2006341273A patent/JP4553392B2/ja active Active
- 2006-12-19 KR KR1020060130160A patent/KR100875801B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP4553392B2 (ja) | 2010-09-29 |
| US20070155034A1 (en) | 2007-07-05 |
| KR100875801B1 (ko) | 2008-12-26 |
| TW200725900A (en) | 2007-07-01 |
| KR20070072371A (ko) | 2007-07-04 |
| JP2007183623A (ja) | 2007-07-19 |
| US7435632B2 (en) | 2008-10-14 |
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