TWI268283B - Porous materials - Google Patents

Porous materials

Info

Publication number
TWI268283B
TWI268283B TW089120348A TW89120348A TWI268283B TW I268283 B TWI268283 B TW I268283B TW 089120348 A TW089120348 A TW 089120348A TW 89120348 A TW89120348 A TW 89120348A TW I268283 B TWI268283 B TW I268283B
Authority
TW
Taiwan
Prior art keywords
dielectric materials
porous materials
porous dielectric
methods
disclosed
Prior art date
Application number
TW089120348A
Other languages
English (en)
Inventor
Craig S Allen
Nikol Annan
Robert M Blankenship
Michael K Gallagher
Robert H Gore
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Application granted granted Critical
Publication of TWI268283B publication Critical patent/TWI268283B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2201/00—Foams characterised by the foaming process
    • C08J2201/04—Foams characterised by the foaming process characterised by the elimination of a liquid or solid component, e.g. precipitation, leaching out, evaporation
    • C08J2201/046—Elimination of a polymeric phase
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2383/04—Polysiloxanes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
TW089120348A 1999-10-01 2000-09-30 Porous materials TWI268283B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15740899P 1999-10-01 1999-10-01
US09/460,326 US6420441B1 (en) 1999-10-01 1999-12-10 Porous materials

Publications (1)

Publication Number Publication Date
TWI268283B true TWI268283B (en) 2006-12-11

Family

ID=26854104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089120348A TWI268283B (en) 1999-10-01 2000-09-30 Porous materials

Country Status (8)

Country Link
US (2) US6420441B1 (zh)
EP (1) EP1088848B1 (zh)
JP (1) JP4512250B2 (zh)
KR (1) KR100674112B1 (zh)
CN (1) CN1181140C (zh)
DE (1) DE60025107T2 (zh)
SG (1) SG93898A1 (zh)
TW (1) TWI268283B (zh)

Families Citing this family (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE323132T1 (de) * 1998-11-24 2006-04-15 Dow Global Technologies Inc Eine zusammensetzung enthaltend einen vernetzbaren matrixpercursor und eine porenstruktur bildendes material und eine daraus hergestellte poröse matrix
US7276788B1 (en) 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6677209B2 (en) 2000-02-14 2004-01-13 Micron Technology, Inc. Low dielectric constant STI with SOI devices
US6413827B2 (en) 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
US6495479B1 (en) * 2000-05-05 2002-12-17 Honeywell International, Inc. Simplified method to produce nanoporous silicon-based films
US6891237B1 (en) * 2000-06-27 2005-05-10 Lucent Technologies Inc. Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
US6271273B1 (en) * 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials
JP2004509468A (ja) * 2000-09-13 2004-03-25 シップレーカンパニー　エル　エル　シー 電子デバイスの製造
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
US20020132496A1 (en) * 2001-02-12 2002-09-19 Ball Ian J. Ultra low-k dielectric materials
US6685983B2 (en) * 2001-03-14 2004-02-03 International Business Machines Corporation Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens
US6903175B2 (en) * 2001-03-26 2005-06-07 Shipley Company, L.L.C. Polymer synthesis and films therefrom
US6787601B2 (en) * 2001-03-26 2004-09-07 Shipley Company, L.L.C. Polymer synthesis
US6998148B1 (en) * 2001-03-28 2006-02-14 Shipley Company, L.L.C. Porous materials
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (ja) 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
KR20020095103A (ko) * 2001-06-11 2002-12-20 제이에스알 가부시끼가이샤 실리카막의 형성 방법, 실리카막, 절연막 및 반도체 장치
AU2002345679A1 (en) * 2001-06-15 2003-01-02 Grain Processing Corporation Biodegradable sorbents
DE10130601B4 (de) * 2001-06-26 2008-08-14 Qimonda Ag Substanz und Verfahren zur Herstellung einer porösen Schicht unter Verwendung der Substanz
DE10153386A1 (de) * 2001-10-30 2003-05-15 Basf Ag Teilchenförmiger, teil- oder vollvernetzter Kautschuk und dessen Verwendung
US6852367B2 (en) * 2001-11-20 2005-02-08 Shipley Company, L.L.C. Stable composition
US6819540B2 (en) * 2001-11-26 2004-11-16 Shipley Company, L.L.C. Dielectric structure
US6661642B2 (en) 2001-11-26 2003-12-09 Shipley Company, L.L.C. Dielectric structure
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7091287B2 (en) * 2001-12-27 2006-08-15 Lg Chem, Ltd. Nanopore forming material for forming insulating film for semiconductors and low dielectric insulating film comprising the same
US20030162890A1 (en) * 2002-02-15 2003-08-28 Kalantar Thomas H. Nanoscale polymerized hydrocarbon particles and methods of making and using such particles
US6890703B2 (en) * 2002-03-06 2005-05-10 International Business Machines Corporation Preparation of crosslinked particles from polymers having activatible crosslinking groups
JP3957154B2 (ja) * 2002-03-19 2007-08-15 富士通株式会社 低誘電率膜形成用組成物、低誘電率膜及びその製造方法、並びに半導体装置
US6936552B2 (en) * 2002-04-08 2005-08-30 Matsushita Electric Industrial Co., Ltd. Method for synthesizing polymeric material, method for forming polymer thin film and method for forming interlayer insulating film
WO2003088343A1 (en) * 2002-04-10 2003-10-23 Honeywell International, Inc. New porogens for porous silica dielectric for integral circuit applications
US7381441B2 (en) 2002-04-10 2008-06-03 Honeywell International Inc. Low metal porous silica dielectric for integral circuit applications
US7060330B2 (en) * 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
CN1510723A (zh) * 2002-06-03 2004-07-07 ϣ 电子器件制造
KR20030093721A (ko) * 2002-06-05 2003-12-11 삼성전자주식회사 금속간 절연막의 패턴을 형성하는 방법
US6638853B1 (en) * 2002-07-03 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for avoiding photoresist resist residue on semioconductor feature sidewalls
WO2004053205A2 (en) * 2002-07-22 2004-06-24 Massachusetts Institute Of Technolgoy Porous material formation by chemical vapor deposition onto colloidal crystal templates
US7153754B2 (en) * 2002-08-29 2006-12-26 Micron Technology, Inc. Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same
JP4574145B2 (ja) * 2002-09-13 2010-11-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． エアギャップ形成
US20050173803A1 (en) * 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials
JP2004274020A (ja) * 2002-09-24 2004-09-30 Rohm & Haas Electronic Materials Llc 電子デバイス製造
US6746967B2 (en) * 2002-09-30 2004-06-08 Intel Corporation Etching metal using sonication
AU2003282988A1 (en) * 2002-10-21 2004-05-13 Massachusetts Institute Of Technology Pecvd of organosilicate thin films
JP4184344B2 (ja) * 2002-11-06 2008-11-19 株式会社野村鍍金 真空用部材の表面処理方法
JP3668222B2 (ja) * 2002-11-07 2005-07-06 株式会社東芝 半導体装置の製造方法
US6943121B2 (en) * 2002-11-21 2005-09-13 Intel Corporation Selectively converted inter-layer dielectric
US7018918B2 (en) * 2002-11-21 2006-03-28 Intel Corporation Method of forming a selectively converted inter-layer dielectric using a porogen material
US20040130027A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Improved formation of porous interconnection layers
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
US6737365B1 (en) * 2003-03-24 2004-05-18 Intel Corporation Forming a porous dielectric layer
JP2004292636A (ja) * 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
US7241704B1 (en) 2003-03-31 2007-07-10 Novellus Systems, Inc. Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US7176144B1 (en) 2003-03-31 2007-02-13 Novellus Systems, Inc. Plasma detemplating and silanol capping of porous dielectric films
US20050260420A1 (en) * 2003-04-01 2005-11-24 Collins Martha J Low dielectric materials and methods for making same
JP4574124B2 (ja) * 2003-05-01 2010-11-04 Ａｚエレクトロニックマテリアルズ株式会社 コーティング組成物、多孔質シリカ質膜、多孔質シリカ質膜の製造方法及び半導体装置
US6921978B2 (en) * 2003-05-08 2005-07-26 International Business Machines Corporation Method to generate porous organic dielectric
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
JP4344841B2 (ja) * 2003-05-30 2009-10-14 独立行政法人産業技術総合研究所 低誘電率絶縁膜の形成方法
US20040253442A1 (en) * 2003-06-11 2004-12-16 Ervin Mubarekyan Method of forming a nanoporous film and compositions useful in such methods
KR100510915B1 (ko) * 2003-07-18 2005-08-26 매그나칩 반도체 유한회사 반도체 소자의 절연막 형성 방법
DE20321548U1 (de) * 2003-09-19 2007-11-29 Gallus Druckmaschinen Gmbh Rotationsdruckmaschine
US20050089642A1 (en) * 2003-10-28 2005-04-28 Rohm And Haas Electronic Materials, L.L.C. Dielectric materials preparation
JP2005133060A (ja) * 2003-10-29 2005-05-26 Rohm & Haas Electronic Materials Llc 多孔性材料
US20050106333A1 (en) * 2003-11-18 2005-05-19 Lehmann Maria J. Anti-reflective optical film for display devices
US20050196552A1 (en) * 2003-11-18 2005-09-08 Lehmann Maria J. Anti-reflective optical film for display devices
US7390537B1 (en) 2003-11-20 2008-06-24 Novellus Systems, Inc. Methods for producing low-k CDO films with low residual stress
US20050137882A1 (en) * 2003-12-17 2005-06-23 Cameron Don T. Method for authenticating goods
US7125793B2 (en) * 2003-12-23 2006-10-24 Intel Corporation Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material
US20080171140A1 (en) * 2004-03-03 2008-07-17 Gerhard Hirmer Thin Film Ferroelectric Composites and Method of Making and Using the Same
US7341761B1 (en) 2004-03-11 2008-03-11 Novellus Systems, Inc. Methods for producing low-k CDO films
US7094713B1 (en) 2004-03-11 2006-08-22 Novellus Systems, Inc. Methods for improving the cracking resistance of low-k dielectric materials
US7381662B1 (en) 2004-03-11 2008-06-03 Novellus Systems, Inc. Methods for improving the cracking resistance of low-k dielectric materials
US7781351B1 (en) 2004-04-07 2010-08-24 Novellus Systems, Inc. Methods for producing low-k carbon doped oxide films with low residual stress
US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US7622400B1 (en) 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
JP5160890B2 (ja) * 2004-06-10 2013-03-13 ダウ グローバル テクノロジーズ エルエルシー ナノ多孔質誘電体フィルムの形成方法
US7303994B2 (en) * 2004-06-14 2007-12-04 International Business Machines Corporation Process for interfacial adhesion in laminate structures through patterned roughing of a surface
TWI322334B (en) 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
TWI323728B (en) * 2004-08-31 2010-04-21 Ind Tech Res Inst Polymer film with three-dimensional nanopores and fabrication method thereof
US7326444B1 (en) 2004-09-14 2008-02-05 Novellus Systems, Inc. Methods for improving integration performance of low stress CDO films
US8263316B2 (en) * 2004-10-01 2012-09-11 Rohm And Haas Electronic Materials Llc Electronic device manufacture
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7695765B1 (en) 2004-11-12 2010-04-13 Novellus Systems, Inc. Methods for producing low-stress carbon-doped oxide films with improved integration properties
US7179755B2 (en) * 2004-12-30 2007-02-20 Intel Corporation Forming a porous dielectric layer and structures formed thereby
US7166531B1 (en) 2005-01-31 2007-01-23 Novellus Systems, Inc. VLSI fabrication processes for introducing pores into dielectric materials
US7510982B1 (en) 2005-01-31 2009-03-31 Novellus Systems, Inc. Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
EP1693484A3 (en) 2005-02-15 2007-06-20 Rohm and Haas Electronic Materials, L.L.C. Plating Method
US7482389B2 (en) * 2005-04-20 2009-01-27 International Business Machines Corporation Nanoporous media with lamellar structures
US7960442B2 (en) * 2005-04-20 2011-06-14 International Business Machines Corporation Nanoporous media templated from unsymmetrical amphiphilic porogens
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US7723438B2 (en) * 2005-04-28 2010-05-25 International Business Machines Corporation Surface-decorated polymeric amphiphile porogens for the templation of nanoporous materials
US7425350B2 (en) * 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
CA2546209C (en) * 2005-05-11 2009-10-06 Grain Processing Corporation Pest control composition and method
US7799472B2 (en) * 2005-05-16 2010-09-21 Turgut M. Gür High temperature direct coal fuel cell
WO2006126387A1 (ja) * 2005-05-24 2006-11-30 National University Corporation Kyoto Institute Of Technology 高分子多孔質体およびその製造法
TWI270901B (en) * 2005-09-16 2007-01-11 Ctech Technology Corp Solid capacitor and fabrication method thereof
US8039049B2 (en) * 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
WO2007047822A2 (en) * 2005-10-20 2007-04-26 Advanced Technology Materials, Inc. Nanoporous low-k films with infiltrated porosity
US7892985B1 (en) 2005-11-15 2011-02-22 Novellus Systems, Inc. Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing
FR2893761B1 (fr) * 2005-11-23 2008-05-09 Commissariat Energie Atomique Procede de fabrication de films dielectriques poreux, a faible permittivite
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP4788415B2 (ja) * 2006-03-15 2011-10-05 ソニー株式会社 半導体装置の製造方法
US7923376B1 (en) 2006-03-30 2011-04-12 Novellus Systems, Inc. Method of reducing defects in PECVD TEOS films
JP2007279459A (ja) * 2006-04-07 2007-10-25 Asahi Kasei Corp 屈折率制御薄膜
FR2903411B1 (fr) * 2006-07-06 2012-11-02 Soc Tech Michelin Nanoparticules de polymere vinylique fonctionnalise
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US8465991B2 (en) * 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
JP4437820B2 (ja) * 2007-01-04 2010-03-24 富士通マイクロエレクトロニクス株式会社 低誘電率膜の製造方法
US7723226B2 (en) * 2007-01-17 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
WO2008111393A1 (ja) * 2007-03-13 2008-09-18 Kaneka Corporation 中空シリコーン系微粒子と有機高分子とからなる樹脂組成物および層間絶縁膜
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
US7622162B1 (en) 2007-06-07 2009-11-24 Novellus Systems, Inc. UV treatment of STI films for increasing tensile stress
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
KR100950063B1 (ko) 2007-11-27 2010-03-31 전남대학교산학협력단 아미노알킬실록산계 수지 조성물 및 이를 이용한 전자소자용 전하 트랩 막
US8058183B2 (en) * 2008-06-23 2011-11-15 Applied Materials, Inc. Restoring low dielectric constant film properties
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
US8431670B2 (en) * 2009-08-31 2013-04-30 International Business Machines Corporation Photo-patternable dielectric materials and formulations and methods of use
US9138308B2 (en) 2010-02-03 2015-09-22 Apollo Endosurgery, Inc. Mucosal tissue adhesion via textured surface
CN102971018B (zh) 2010-05-11 2016-02-03 阿勒根公司 致孔剂组合物、制备方法及用途
WO2014022657A1 (en) 2012-08-02 2014-02-06 Allergan, Inc. Mucosal tissue adhesion via textured surface
WO2014052724A1 (en) 2012-09-28 2014-04-03 Allergan, Inc. Porogen compositions, methods of making and uses
US9012912B2 (en) * 2013-03-13 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Wafers, panels, semiconductor devices, and glass treatment methods
JP6373148B2 (ja) * 2014-09-29 2018-08-15 日東電工株式会社 シリコーン多孔質体及びシリコーン多孔質体の製造方法
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US10544330B2 (en) 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
CN110225949B (zh) * 2017-02-06 2021-06-04 富士胶片株式会社 涂布组合物、防反射膜及其制造方法、层叠体以及太阳能电池模块
US10962791B1 (en) 2018-03-22 2021-03-30 Facebook Technologies, Llc Apparatuses, systems, and methods for fabricating ultra-thin adjustable lenses
US11245065B1 (en) 2018-03-22 2022-02-08 Facebook Technologies, Llc Electroactive polymer devices, systems, and methods
CN111819224B (zh) * 2018-03-23 2023-08-08 积水化成品工业株式会社 乙烯基系树脂颗粒和其制造方法
US11048075B1 (en) 2018-03-29 2021-06-29 Facebook Technologies, Llc Optical lens assemblies and related methods
JP7179863B2 (ja) * 2018-09-11 2022-11-29 積水化成品工業株式会社 ビニル系樹脂粒子及びその製造方法
US10860101B1 (en) 2018-11-21 2020-12-08 Facebook Technologies, Llc Systems and methods using patterned nanovoids for actuation and deformation sensing
US11139756B2 (en) 2018-12-11 2021-10-05 Facebook Technologies, Llc Transducers with electrostatic repulsion and associated systems and methods
US11233189B2 (en) 2018-12-11 2022-01-25 Facebook Technologies, Llc Nanovoided tunable birefringence
US11256331B1 (en) 2019-01-10 2022-02-22 Facebook Technologies, Llc Apparatuses, systems, and methods including haptic and touch sensing electroactive device arrays
WO2020198474A1 (en) * 2019-03-26 2020-10-01 Rutgers, The State University Of New Jersey Porous epoxy nanocomposite monoliths
US11180670B2 (en) 2019-03-28 2021-11-23 Lawrence Livermore National Security, Llc Three-dimensional porous siloxanes using leachable porogen particles

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883452A (en) 1973-05-15 1975-05-13 Du Pont Composition of polyimide powder and polyformaldehyde
JPS57145101A (en) 1980-12-30 1982-09-08 Nat Res Dev Polymerization
JPS60137942A (ja) * 1983-12-26 1985-07-22 Matsushita Electric Ind Co Ltd 微孔質膜の製造方法
JPH0784538B2 (ja) 1987-05-11 1995-09-13 エヌオーケー株式会社 多孔質体の製造方法
JP2531906B2 (ja) 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
JP3274487B2 (ja) 1992-01-30 2002-04-15 東レ・ダウコーニング・シリコーン株式会社 発泡性シリコーンゴム組成物およびシリコーンゴム発泡体の製造方法
US5384376A (en) 1992-12-23 1995-01-24 Eastman Kodak Company Organic/inorganic hybrid materials
MY112945A (en) 1994-12-20 2001-10-31 Ibm Electronic devices comprising dielectric foamed polymers
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
US5804607A (en) 1996-03-21 1998-09-08 International Business Machines Corporation Process for making a foamed elastomeric polymer
US5700844A (en) 1996-04-09 1997-12-23 International Business Machines Corporation Process for making a foamed polymer
US5767014A (en) 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
US5962113A (en) 1996-10-28 1999-10-05 International Business Machines Corporation Integrated circuit device and process for its manufacture
US5895263A (en) 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
ATE280806T1 (de) 1997-07-15 2004-11-15 Asahi Chemical Ind Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
JPH11217458A (ja) * 1998-02-04 1999-08-10 Hitachi Chem Co Ltd 多孔質膜、その製造法及び物品
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
RU2195050C2 (ru) * 1998-06-05 2002-12-20 Джорджиэ Тек Рисеч Копэрейшн Способ получения пористой изоляционной композиции (варианты), композиция, используемая для получения пористого изоляционного материала (варианты), и полупроводниковое устройство
US6093636A (en) 1998-07-08 2000-07-25 International Business Machines Corporation Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets
JP2000044719A (ja) 1998-07-22 2000-02-15 Minnesota Mining & Mfg Co <3M> 多孔質ポリイミド、その前駆体および多孔質ポリイミドの製造方法
EP1035183B1 (en) 1998-09-25 2009-11-25 JGC Catalysts and Chemicals Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
ATE323132T1 (de) 1998-11-24 2006-04-15 Dow Global Technologies Inc Eine zusammensetzung enthaltend einen vernetzbaren matrixpercursor und eine porenstruktur bildendes material und eine daraus hergestellte poröse matrix
DE60022746T2 (de) 1999-04-14 2006-06-29 Alliedsignal Inc. Durch polymerabbau erhältliches nano-poröses material mit niedriger dielektrizitätskonstante
US6146749A (en) 1999-05-03 2000-11-14 Jsr Corporation Low dielectric composition, insulating material, sealing material, and circuit board
US6107357A (en) * 1999-11-16 2000-08-22 International Business Machines Corporatrion Dielectric compositions and method for their manufacture

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