TWI266661B - Niobium powder and solid electrolytic capacitor - Google Patents
Niobium powder and solid electrolytic capacitor Download PDFInfo
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- TWI266661B TWI266661B TW092101259A TW92101259A TWI266661B TW I266661 B TWI266661 B TW I266661B TW 092101259 A TW092101259 A TW 092101259A TW 92101259 A TW92101259 A TW 92101259A TW I266661 B TWI266661 B TW I266661B
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- Prior art keywords
- ppm
- powder
- electrolytic capacitor
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- solid electrolytic
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 26
- 239000007787 solid Substances 0.000 title claims abstract description 18
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011164 primary particle Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- -1 sodium ruthenium fluoride Chemical compound 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- GIDBEKINLBHYLA-UHFFFAOYSA-I pentachlororuthenium Chemical compound Cl[Ru](Cl)(Cl)(Cl)Cl GIDBEKINLBHYLA-UHFFFAOYSA-I 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Description
1266661 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關鈮粉末之組成及利用此所形成之固體電 解電容器。 【先前技術】 先行技術中，近年來鈮做爲具有高靜電容量之固體電 解電容器之陽極被重視之。圖1代表固體電解電容器之縱 切面之模式圖者。固體電解電容器10係由鈮11、氧化鈮 1 2、固體電解質1 3、石墨1 4、銀1 5所層合之結構者。此 固體電解電容器 1 〇之製造步驟如下。將鈮粉末以約 1 000〜1 400 °C進行燒結後，製造多孔性之燒結體，進行轉 化處理之後，於鈮1 1之表面形成氧化鈮1 2。再形成固體 電解質1 3、石墨1 4、銀1 5。接著於鈮1 1進行連接陽極 1 8 (外部端子），於銀1 5介著導電性粘著劑1 6連接陰極 1 9 (外部端子）。最後，進行樹脂塑模後，經陳化步驟製 造之。 先行做爲固體電解電容器用所使用之鈮粉末於特開昭 64-73 009號公報，特開平6-25 70 1號公報中被要求爲高純 度者。一般被認爲純度愈高愈佳者。特開昭64-73 009號 公報中未揭示有關純度之具體數値。特開平6-25 70 1號公 報中記載氧爲lOOppm以下、或5000ppm以下者、非氧化 物不純物之總數爲200ppm以下、或5 000ppm以下者。惟 ，有關具體之非氧化物不純物名稱，含量並未記載之。 -6- (2) 1266661 另外，特開2〇〇〇_226607號公報中揭示於鈮粉末中添 加特定元素後，陰極之容量提昇。亦即「添加1種以上選 自氮、燐、硼、硫黃、矽、氟、釔、鎂等公知元素之摻雜 物。此等元素於燒結鈮粉末之過程中做爲阻化劑作用，提 高陰極容量之作用者，更有改善轉化氧化膜膜質之效果。 此等元素以氬氣或氫氣做爲擔載氣體，藉由單體或氫做爲 被還原化合物進行添加之。添加量一般爲鈮之lOOOppm 以下之量者。」。惟，添加物種類，量及其具體效果於定 量上並未顯示。 【發明內容】 本發明係以提供一種於鈮粉末中含有適量氫、碳、或 鎳後適用於泄漏電流小，且，靜電容量大之固體電解電容 器之製造的鈮粉末與使用此之固體電解電容器爲其目的者 〇 先行鈮粉末中含有氫、碳、或鎳者完全未被揭示。本 發明者藉由含適量氫、碳、或鎳於鈮粉末後，發現可達成 該目的，進而完成本發明。亦即，本發明第丨發明特徵爲 含有氫Ippm以上、600ppm以下、殘餘部份實質上爲鈮之 銳粉末者。當含氫量不足1 p p m則泄漏電流變多，且，靜 電容量無法充份變大，因此，限定爲lppm以上者。 1〜6〇Oppm之範圍內時，泄漏電流少、靜電容量亦呈最大 値，g氫白里超出600ppm時，反而增加泄漏電流、靜電 容量亦減少，因此，上限爲6〇0ppm。 (3) 1266661 本發明第2發明之特徵爲含有碳Ippm以上、2〇〇ppm 以下，殘餘部份實質上爲鈮之鈮粉末者。碳含量不足 1 p p m時則泄漏電流變多，靜電容量不足，反之，碳含量 超出200ppm則泄漏電流增加，靜電容量亦減少，因此， 上限爲200ppm者。 本發明第3發明之特徵爲含有鎳lppm以上，50Ppm 以下，殘餘部份實質上爲鈮之鈮粉末者。當鎳含量不足 1 p p m則泄漏電流變多，靜電容量不足，反之，鎳含量超 出50ppm則泄漏電流增加，靜電容量亦減少，因此，上 限爲50ppm者。 本發明第4發明之特徵爲含有2種以上選自氫： lppm以上、600ppm以下，碳：lppm以上、200ppm以下 ，鎳：1 p p m以上、5 0 p p m以下者，殘餘部份實質上爲鈮 之鈮粉末者。 又，本發明第5發明之特徵爲以含有2種以上選自含 有該氫lppm以上、600ppm以下之鈮粉末，含有碳lppin 以上、200ppm以下之鈮粉末，含有鎳lppm以上、50ppm 以下之鈮粉末，或氫：lppm以上、600ppm以下，碳： lppm以上、200ppm以下，鎳：lppm以上、50ppm以下 ，殘餘部份貫質上爲鈮之鈮粉末之任意做爲原料者，於電 容器內部使燒結體做爲陽極被形成之結構者爲其特徵之固 體電解電容器者。 先行公知之鈮粉末其1次粒子之平均粒徑小，如： 5 Onm ( 0 . 〇 5 0 // m )以下，或 5 0〜1 5 Onm ( 0.0 5 0〜〇 . 1 5 0// m (4) 1266661 )者，燒結此微細鈮粉末後形成陽極之後，做爲燒結體用 時，其粒子太小爲其缺點者，轉化處理步驟中鈮呈氧化膜 被消耗而減少未氧化鈮之量。因此，電極面積減少，無法 取得超高容量之電容器。本發明第1至第3之發明其1次 粒子之平均粒徑爲超出0.150//m、2//m以下者極爲理想 。當鈮粒子太大時，做爲燒結體時，則不易燒結。又，1 次粒子係指於SEM顯微鏡觀察下做爲單體粒子者被收集 未凝聚之粒子者。平均粒徑係指粒度分佈圖中個數累積 5 0%之粒徑者。 【實施方式】 〔發明實施之最佳形態〕 以下，說明本發明之實施形態。 利用鎳粉末，藉由以下方法製作固體電解電容器後， 測定其泄漏電流及靜電容量。於〇 . 2g之鈮粉末埋入用於 陽極之0 0.5 m m鈮線材料加壓成型後做成顆粒。加壓時 之荷重爲50〜150MN/m2，加壓體容積密度爲2800〜3 200 kg/m2者。將所製成之顆粒於爐內壓力lx 10_3Pa以下，溫 度1000〜140(TC下進行燒成。燒成後之樣品浸漬於0.8質量 %磷酸水溶液中進行外加電壓20V 6小時，於顆粒表面生成 轉化被膜。之後於40質量％硫酸水溶液中，測定鈮電容器 之泄漏電流及靜電容量。泄漏電流係測定於測定電壓14 V 5 分鐘後之電流値者。又，靜電容量係於偏壓電壓1.5V之條 件下進行測定者。 (5) 1266661 做爲固體電解電容器用鈮粉末之製造方法者可藉由五氯 化鈮之鎂、鈉、或氫之還原、藉由氟化鈮之鈉還原、藉由氧 化鈮之碳或鋁之還原等進行製造之。 以下，例舉實施例進行本發明具體例之說明。 (實施例1〜3、比較例1〜2) 藉由五氯化鈮之氫還原後製作鈮粉末。將此鈮粉末於氫 氣氣氛中，溫度1100°c下隨時間變化進行加熱處理後，調 整往鈮粉末之導入氫量。氫量係利用導熱方式氣體分析計進 行測定之。之後，作成上述之電容器，測定泄漏電流及靜電 容量之値。結果示於表1。氫含量爲lppm〜600ppm之範圍時 ，泄漏電流少、靜電容量大。不在此範圍時則不盡理想。 (實施例4〜5、比較例3〜4) 藉由氧化鈮之鋁還原製作鈮粉末。往此鈮粉末進行萘之 添加量呈各種變化後，於溫度1100°C下進行所定時間加熱 處理後，調整對於鈮粉末之碳導入量。碳量以燃燒紅外吸收 分析裝置進行測定之。之後，製作上述電容器後，測定泄漏 電流及靜電容量之値。結果示於表 2。碳含量爲 lppm〜200ppm之範圍時，泄漏電流少、靜電容量大。不足 lppm及超出200ppm時，則泄漏電流變多、靜電容量變少。 (實施例6〜7、比較例5〜6) 藉由氧化鈮之鋁還原後，製作鈮粉末。對於此鈮粉末之 -10- (6) 、 1266661 添加鎳羰基之量呈各種變化後，於溫度1100°C下進行所定 - 時間加熱處理後，調整對於鈮粉末之導入鎳之量。鎳量以等 離子體勃起質量分析裝置進行測定之。之後，製成如上述之 、 電容器，測定泄漏電流及靜電容量之値。結果示於表3。鎳 、 含量爲lppm〜50ppm時，其泄漏電流少、靜電容量大爲理想 者。此範圍以外者，則性能降低。 〔產業上可利用性〕 · 本發明可藉由含所定量之特定成份於鈮粉末後，取得泄 漏電流小、靜電容量大之固體電解電容器者。
表1 氫含有率 (ppm ) 泄漏電流 (μA/gF ) 靜電容量 (KFV/g) 1次粒子之 平均粒徑 (μηι ) 比較例1 0.5 0.015 70,500 0.5 實施例1 5 0.0088 75,〇〇〇 0.7 實施例2 200 0.0083 76,000 0.5 實施例3 550 0.0087 75,500 0.6 比較例2 700 0.018 69,000 0.6 -11 - (7) 1266661 表2 碳含有率 (ppm ) 泄漏電流 (μΑ/μΐ) 靜電容量 (μΡν/g ) 1次粒子之 平均粒徑 (μιη ) 比較例3 0.5 0.015 70,500 0.3 實施例4 3 0.0080 77,000 0.4 實施例5 180 0.0087 78,000 0.4 比較例4 250 0.020 73,500 0.4
表3 鎳含有率 (ppm ) 泄漏電流 (μΑ/μΡ) 靜電容量 (μΡν/g) 1次粒子之 平均粒徑 (μπι ) 比較例5 0.5 0.012 70,000 0.4 實施例6 2 0.0088 75,000 0.4 實施例7 40 0.0086 75,000 0.4 比較例6 60 0.028 65,000 0.5
【圖式簡單說明】 圖1代表固體電解電容器之模式截面圖者。 〔主要元件對照表〕 -12- (8) (8)1266661 17 :樹脂塑模 1 6 :導電性粘著劑 10 :固體電解電容器 1 2 :氧化鈮 11 :鈮 1 8 :陽極 1 3 :固體電解質 14 :石墨 15 :銀 19 :陰極
-13-
Claims (1)
- (1) 1266661 拾、申請專利範圍 1. 一種鈮粉末，其特徵爲含有1PPm以上、600pPm^ 下之氫，殘餘部份實質上爲鈮者。 2· 一種鈮粉末，其特徵係含有1PPm以上、200pPm以 下之碳，殘餘部份實質上爲鈮者。 3· —種鈮粉末，其特徵係含有Ippm以上、5〇ppm^T 之鎳，殘餘部份實質上爲鈮者。 4. 一種鈮粉末，其特徵係含有2種以上選自 g 氫：lppm以上、600ppm以下， 碳：lppm以上、200ppm以下， 鎳：lppm以上、5〇ppm以下， 者’殘餘部份實質上爲鈮者。 · 5 . —種固體電解電容器，其特徵係以如申請專利範 · 圍第1項、第2項、第3項或第4項之鈮粉末做爲原料之燒結 體於電容器內部做成陽極而形成者。 -14-
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002011824A JP2003213301A (ja) | 2002-01-21 | 2002-01-21 | ニオブ粉末及び固体電解コンデンサ |
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| Publication Number | Publication Date |
|---|---|
| TW200302144A TW200302144A (en) | 2003-08-01 |
| TWI266661B true TWI266661B (en) | 2006-11-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW092101259A TWI266661B (en) | 2002-01-21 | 2003-01-21 | Niobium powder and solid electrolytic capacitor |
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| Country | Link |
|---|---|
| US (1) | US20040244531A1 (zh) |
| EP (1) | EP1502680A4 (zh) |
| JP (1) | JP2003213301A (zh) |
| KR (1) | KR20040079403A (zh) |
| CN (1) | CN1212910C (zh) |
| TW (1) | TWI266661B (zh) |
| WO (1) | WO2003061881A1 (zh) |
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| RU2308113C2 (ru) * | 2002-01-24 | 2007-10-10 | Х.Ц. Штарк, Инк. | Проволока конденсаторного сорта с более высокими прочностью на разрыв и твердостью |
| JP6512297B2 (ja) * | 2015-08-12 | 2019-05-15 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
| CN106868370A (zh) * | 2017-02-09 | 2017-06-20 | 武汉华智科创高新技术有限公司 | 一种抗氧化的铌合金粉末配方 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1471183A (fr) * | 1965-12-31 | 1967-03-03 | Kuhlmann Ets | Procédé pour l'obtention de poudres métalliques ou composites par réduction directe des halogénures correspondants |
| KR0145741B1 (ko) * | 1990-06-06 | 1998-11-02 | 해리 제이. 귄넬 | 탄탈 또는 니오브 기재 합금 |
| WO2000049633A1 (fr) * | 1999-02-16 | 2000-08-24 | Showa Denko K.K. | Poudre de niobium, element fritte a base de niobium, condensateur renfermant cet element et procede de fabrication de ce condensateur |
| US6402066B1 (en) * | 1999-03-19 | 2002-06-11 | Cabot Corporation | Method of making niobium and other metal powders |
| DE19953946A1 (de) * | 1999-11-09 | 2001-05-10 | Starck H C Gmbh Co Kg | Kondensatorpulver |
| US6423110B1 (en) * | 1999-12-08 | 2002-07-23 | Showa Denko K.K. | Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body |
| DE10030387A1 (de) * | 2000-06-21 | 2002-01-03 | Starck H C Gmbh Co Kg | Kondensatorpulver |
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2002
- 2002-01-21 JP JP2002011824A patent/JP2003213301A/ja active Pending
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2003
- 2003-01-21 WO PCT/JP2003/000459 patent/WO2003061881A1/ja not_active Application Discontinuation
- 2003-01-21 EP EP03701817A patent/EP1502680A4/en not_active Withdrawn
- 2003-01-21 TW TW092101259A patent/TWI266661B/zh not_active IP Right Cessation
- 2003-01-21 KR KR10-2004-7000852A patent/KR20040079403A/ko not_active Application Discontinuation
- 2003-01-21 US US10/485,295 patent/US20040244531A1/en not_active Abandoned
- 2003-01-21 CN CNB038006871A patent/CN1212910C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20040244531A1 (en) | 2004-12-09 |
| CN1533312A (zh) | 2004-09-29 |
| EP1502680A1 (en) | 2005-02-02 |
| EP1502680A4 (en) | 2007-04-04 |
| KR20040079403A (ko) | 2004-09-14 |
| WO2003061881A1 (fr) | 2003-07-31 |
| JP2003213301A (ja) | 2003-07-30 |
| CN1212910C (zh) | 2005-08-03 |
| TW200302144A (en) | 2003-08-01 |
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