TWI265299B - Optical testing device - Google Patents
Optical testing device Download PDFInfo
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- TWI265299B TWI265299B TW091119746A TW91119746A TWI265299B TW I265299 B TWI265299 B TW I265299B TW 091119746 A TW091119746 A TW 091119746A TW 91119746 A TW91119746 A TW 91119746A TW I265299 B TWI265299 B TW I265299B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
1265299 五、發明說明(1) 發明背景 本發明針對一種夾頭,適於測試在測試中裝置(DUT) 上的電氣和/或光學組件。 在低電流測量中,適於減少漏電之保衛系統業已公知 ’且在技術文獻上密集討論過。例如參見William Knauer 著〈供低電流/低電壓參變數測試之裝設〉,發表於《評 價工程》1 9 9 0年11月號第i 5 〇 - 1 5 3頁。採用如此保衛系統 的探測站典型上發出測試信號至測試中裝置(DUT)上所定 的接觸墊片,並發出保衛信號至圍繞DUT在若干側面利用 介質材料(例如空氣)與DUT分離之導電性材料。保衛信號 最好密切接近測試信號或以其他方式遵循測試信號,因~而 減少可能發生的電磁性漏電。 如此探測站往往亦提供導電性容器,圍繞探測站周緣 ’接至遮蔽電位。遮蔽電位典型上連接至大地地面、儀= 地面’或若干其他適當電位。例如參見p e t e r s等人的蓋碗 專利第6, 002, 263號。 果國 為提供探測站的有效保衛和遮蔽,同樣可用在測試中 置放DUT的多段夾頭。支持DUT的夾頭上段,典型上包含導 電性金屬層,測試信號可途經此層。夾頭的中段和下^同 樣包含導電性金屬層,可分別賦予保衛信號和遮蔽信^ : ^此一來,置於如此多段夾頭上的DUT可從下方保衛°和~遮 蔽。有些探測站亦可供從側面和上面保衛。 ’、、 許多電氣裝置,尤其是半導體質裝置,含有電氣組件 和光學組件。有些光學組件從光源接收光學信號,把戶斤接
1265299 五、發明說明(2) 收的光學信號轉變成電氣信號,例如光檢波器。其他光學 組件把電氣信號轉換成光學信號,例如光射二極體。還有 其他光學組件可含有複數光學和/或電氣組件。探測站往 往可用來測試電氣組件。 可惜上述探測站不適於測試光學組件,因為沒有通過 夾頭本身的光程。因此,要使用不同類型的夾頭,即光學 夾頭,來測試含有光學組件之測試元件。光學夾頭典型上 包含中央光學透明媒體,上面可支持DUT。例如來自光源 的光學信號可從光學夾頭下方 '上方或側面導向DUT,並 使用探針或連接器感測DUT的所得電氣輸出。同理,可例 如使用探針或連接器提供電源給DUT,以及位於光學夾頭 下方、上方或側面之光學感測裝置,以感測DUT的所得光 學輸出。因此,探測站可用來提供隔離外界電磁雜訊的遮 蔽環境,故可進行光學DUT的輸入-輸出特性。可知DUT上 光學組件的測試,是藉觀察裝置的輸入和輸出特性進行, 通常具有重大電壓和/或電流水準(或光學功率),使測量 容易進行。 圖式簡單說明 第1圖為具有夾頭的晶圓探測站一部份之透視圖; 第2圖為光學夾頭之斷面圖; 第3圖為另一光學夾頭之斷面圖; 第4圖為又一光學夾頭之斷面圖; 第5圖為具有夾頭的晶圓探測站一部份之透視圖; 第6圖為光學夾頭之斷面圖;
1265299 五、發明說明(3) 第7圖為另一光學夾頭之斷面圖; 弟8圖為又一光學夾頭之斷面圖; 第9圖為第1圖所示晶圓探測站之俯視圖,表 奪性 真空定位系統; ^ ^ 第10圖為光學夾頭之斷面圖; 第11圖為另一光學夾頭之斷面圖; 苐12圖為又一光學夾頭之斷面圖。 說明 傳統的光學測試措施,涉及測試DUT的輸入和輸出, 具有光學感測器、連接器和/或電探針。基於使用&感測器 、連接器和/或電探針,DUT的整體操作特性可以檢…。口 本發明人等明瞭,連同光學測試,有原先尚未 < ,以達成原先不認為需要的績效水準,即超 $ Τ $ :^里。具體而S ,本發明人等確定達與只 埏充分準確測量的DUT操作輸入和/ ^用遮^农 出之外,t測量MT的其他電氣V;:上作輪入和/或輸 方面之-料,諸如光射:光學_電氣 卻度的低電流測量。 σ处之漏電’需要高準 第1圖表示一種夾頭1 〇,適 支持體1 2。夾頭1 〇的周緣區以;測喊DUT的探測站内之 ,構件18加以支持。絕緣構 為佳,繞其外周以 疋立面位置。絕緣構件u含 ^持央頭10在彼此相對巴 20,容許央頭ίο以及上面所ί二,16,穿過有長孔的, 又待的m轉動,以供對準J。0 1265299 五、發明說明(4) ,緣,件18和上面支持的夾頭10,與導電性構件22 二田T柄16可從導電性構件22下方的長孔24!二。手^二 U Ξ Ϊ運動夾頭1〇,以便更容易裝卸夾頭10上的DUT Μ 1〇ί f t至少部份側向包圍和/或至少部份側向隔離夾 ^ ^ =或絕緣構件18。除連接器23外,探針可用來提供 測魂給DUT ’或另外從DUT感測信號。光學感測裝置
)可包含在導電性構22下方,於支持件29界定的 區域内。另外,光學感測裝置可包含在導電性構件2 2上方 或=面。如第1圖所示,DUT測試環境含有保衛電位,其附 近籍V電性構件2 2連接至保爾電位,可容許以現有光學探 針原先彳故不到,或未想過需要之漏電位階有效測試者。例
如’第1圖所示光學夾頭的保衛,造成雜散電容幅度減數 階以上(強制遮蔽)。 支持體12可含有對夾頭10—或以上之連接器23。連接 器23最好是共軸或三軸連接器,提供力測試信號給训τ。 又,複數連接器2 3可用來提供Ke 1 v i η連接和/ ^擬似 Kelvin連接至DUT。此外,支持體12可含有一或以上的連 接器25,提供感測信號給導電性構件22。連接器23和/或 連接器2 5上的保衛編結可接電至導電性構件2 2。
雖然夾頭1 0設計方便改進測試DUT,可得原先未考慮 過的漏電位階,當探測結果受到壓力時,DUT即有發生破 裂的傾向。此外,D U T中央區未受到支持,結果即有魅曲 的傾向或變成不均勻。參見第2圖,失頭1〇可進而包含中 央區’對測試所用波長有光學透過性(例如透明)材料。光
1265299 气、發明說明(5) 學透過性材料42以與支持DUT 40的夾頭1 0共平面(或實質 上共平面)為佳,使D U T被支持呈面對面接觸於至少大部份 表面積上。又,光學透過性材料4 2宜佔有夾頭1 0所界定開 口(即並非深度)側向空間程度之大部份。在DUT光程内有 光學透過性材料42,光即容易通過夾頭1〇内之開口。 絕緣構件1 8可包含凸部5 0和凹部5 2。凸部5 0形成内徑 實質上等於夾頭1〇外徑之外周,以維持夾頭1〇在凹部52内 。凹部52内徑最好實質上等於夾頭丨〇内徑,以形成光程34 的實質上連續界面。 日同樣方式,導電構件22可含有凸部60和凹部62。凸部 60提供具有内形的表面,諸如一對共平面表面,實質上等 !! ί緣材料1 8的凸部5 〇外寬度。如此,絕緣構件1 8可定位 邻f件22内。導電構件22的凹部62内徑實質上等於凹 邛52=夾頭1〇的内徑,以形成光程34的實質上連續界面。 先f 34内的裝置可包含對光學信號波長 種材料均適用作光學夹頭材料 硌如石类、青玉、鈮酸鋰和矽。 去☆,及第2圖所示支持體後,本發明人等 未文保衛的區域存在,即在D(JT 有灵貝上 在,下方的此區保持未受保衛下似乎 光程,會抑制從裝置感測光學信號/電性構件置於
下方的光程ϊίί連= 可藉謂T 而加以克服。參見第3圖,光學透過性較·^的^電導材電料材7〇料
第8頁 1265299 五、發明說明(6) 可定位在光程内,並接電至導電性構件22,如有需 DUT提供更完全的保衛。另外,亦可使用非導電性光、 =^料,塗佈光學透明材料,諸多氧化銦 性構件2 2。 妖电主¥電 質上ίif i和3圖所示支持體後,本發明人等明瞭仍有實 乎mt卜古Λ的區域存在’即在DUT上方的區域。起初 上方此區域仍然未受保衛’因 行,可蕻ηπτ^… 步考篁後,導電性構件之似乎不可 了错DUT重新疋位並在DUT上方光程了 導電材料74加以克服,如筮4岡新一 匕a先子透射性 導電性光學透明ί 2泠ί 。另外,亦可使用非 接電至導;;塗佈光學透明㈣’諸如氧化铟錫, 須知所示DUT定向是DUT在卜,十-右上 或^頭(等)的定向亦可以反向進ί在下。須知DUT和 7支持體1 2的較佳具體例提供 忒仏號和保衛構件22,加上ς ΐ支持表面,可提供測 二么DUT的信號可受到電氣護、。軒件J’使提供給或接 =光學夾頭和電氣探測站 =DlJT不需在光學探測 :f包含在請内的光學組件和電碩.'轉移,以供分別 :斂而t ’在電氣和光學 電:組件。 =提供安定性表面把0吖保j 1中用來支持DUT的夾頭 丄L面’有許多夾頭適於稱為直-V同時進行測試。在 持_定位。現有真空夹/之為—真項,九頭’使用真空壓力保 孭問題是,在破晶圓上測 1265299 五、發明說明(7) ___ 試DUT時,由夹頭提供的直* 因為夾頭只為持有完敕曰鬥工ϋ有使日日圓變形的傾向, 經進一步考慮後"Γ =發^ f J確一 外絕緣體93可包圍導電性 (文f參見弟5圖,另 周是另一導電性構件95。導4性$二f二絕緣體93的外 位,而另一導電性構件95是接至遮蔽帝=。^至保衛電 任何適當方式設備,例如連接、3 ,:遮蔽電位可以 編紝〇夂异坌β闰〇营運接益23和/或連接器25的遮蔽 ί;第7Η Λ 導電性構件95可延伸至光程. >見^ 7圖,另一導電性構件95可在光程^之前終止。此 :透2ί„學透過性導電材料,或非導電性光 :奸^ 材料,八有導電性塗料,一般指材料9 7,並接至 遮蔽。參見第8圖,另一導電性構件95可在光程34之前終 止。此外’在光程内可設有光學透過性導電材料,或非導 電性光學透過性材料,具有導電性塗料,一般指材料9 9, 並接至遮蔽。可見保衛和/或遮蔽環境可在側面方向延伸 ’而如有需要,保衛和/或遮蔽環境可在直立方向延伸。 參見第9圖,夾頭10可包含真空室1〇〇,包括繞夾頭中 點約2 7 0 °的近似環。真空室1 0 0可視需要圍繞整個夾頭或 2 7 0 °以下。真空源(圖上未示)操作提供真空,在操作上 通過真空供應線102和104、真空供應室1〇6、三個真空傳 動軸108,接至真空室,真空室1〇8内呈現的真空壓力,經 由小通孔11 0傳至夾頭1 0表面。 真空傳動軸1〇8(或另外通道或室)分別定位在真空室 第10頁 1265299 五、發明說明(8) 100周圍0 ° 90 和2 7 0。。各真空傳動軸分別 11 2,選擇性把部份真空室i 〇〇與真空源隔吏甩一管塞 空源供應真空壓力通過真空供應線1 04 ,而盥直务*如,若真 1 08相關的管塞1 1 2,即分別在〇。和9。作'動、工傳動輛 象限段即提供真空麼力至晶圓。同理拔則夾頭的 空壓力通過真空供應線1〇2或1〇4 ^二,件供應真 r不作動,然後半段夹以^ 效裝置的斷片。㈣,若可斷Π 空麼力,並藉減少茂漏而改進直*政:以更谷J控制真 110不被各DUT所覆蓋,則DUT下方 此外,右大里小通孔 空壓力,即不足以維持充分壓\方的5小通孔U0用之所得真 孔同樣可[可選;Ξ㈡:丄2其他方式之真空洞 又可視需要使不同區域含有士真空洞孔之組群有效。 圖型包含至少-可選擇區,“:㈡樣洞孔。λ空洞孔的 ,可對各真空區提供選擇真空至夾頭表面。此外 進一步考量複數DUT後,在伞風4 有真空洞孔。因此,可用一對在隔先子透過性材料内最好含 口,供以真空’以上板内的=性板’内界:開 ,使用充分厚度的隔開玻璃板,對曰、^工至上表面。w而 造成光學信號的過度繞射。又,f "曰圓提供結構整體性, 使用充分薄的隔開玻璃板 第11頁 1265299 五、發明說明(9) 造成支持玻璃因此和晶圓的折曲,使測量失真。參見第1 0 ,1 1,1 2圖,為克服此項限制,一對光學透過性板最好在二 板間包含網狀材料,諸如蜂巢式圖案,以提供結構性支持 。網狀材料最好在二板間延伸並加以相連,以提供結構上 的支持。網狀材料多為任何適當圖案,諸如格狀圖案或條 狀。此外,網狀材料可對上表面同樣提供選擇性真空區。 在此引述的一切文獻均列入參玫。 前述採用的術語和表現方式,均用來說明而非限制, 而此等術語和表現方式之使用,無意排除所示和所述或其 部份的等效物,須知本發明之範圍純以如下申請專利範圍 加以界定和限制。
第12頁 1265299 圖式簡單說明 弟1圖為具有爽頭的晶圓棟測站一部份之透視圖, 第2圖為光學夾頭之斷面圖; 第3圖為另一光學夾頭之斷面圖; 第4圖為又一光學夾頭之斷面圖; 第5圖為具有夾頭的晶圓探測站一部份之透視圖; 第6圖為光學夾頭之斷面圖; 第7圖為另一光學夾頭之斷面圖; 第8圖為又一光學夾頭之斷面圖; 第9圖為第1圖所示晶圓探測站之俯視圖,表示選擇性 真空定位系統; 第10圖為光學夾頭之斷面圖; 第11圖為另一光學夾頭之斷面圖; 第12圖為又一光學夾頭之斷面圖。
第13頁
Claims (1)
1265299 六、申請專利範圍 1. 一種測試總成,包括: (a) 夾頭,以供支持測試中裝置; (b) 該夾頭界定光程,對光學信號具有透過性;以 及 (c )導電性構件,至 連接於保衛電位 2. 如申請專利範圍第1 電性表面,當該測試中裝置 裝置呈面對面銜接者。 3. 如申請專利範圍第1 坦上表面,以支持該測試中 4. 如申請專利範圍第1 穿之實質上圓形光程者。 5. 如申請專利範圍第1 自該測試中裝置者。 6. 如申請專利範圍第1 自與該測試中裝置隔開之位 7. 如申請專利範圍第1 至少部份在側面包圍該夾頭 8. 如申請專利範圍第1 電性構件係彼此隔開者。 9. 如申請專利範圍第1 位於該夾頭和該導電性構件 1 0.如申請專利範圍第1 少部份在側向與該夾頭隔離 者。 項之總成,其中該 支持於其上時,即 夾頭具有導 與該測試中 項之 裝置 項之 項之 項之 置者 項之 者。 項之 項之 之間 項之 總成 者。 總成 總成 總成 〇 總成 總成 總成 者。 總成 其中該 其中該 其中該 其中該 其中該 其中該 又包括 其中該 夾頭具有平 夾頭界定貫 光學信號源 光學信號源 導電性構件 夾頭和該導 絕緣構件, 光程包含光
第14頁 1265299 六、申請專利範圍 學通過性材料,容該光學信號通過者。 11.如申請專利範圍第1 0項之總成,其中該光學透過 性材料包含導電性塗料,接電至該保衛電位者。 1 2.如申請專利範圍第1 1項之總成,其中該導電性塗 料位於該測試中裝置下方者。 1 3.如申請專利範圍第11項之總成,其中該導電性塗 料係位於該測試中裝置上方者。 1 4.如申請專利範圍第11項之總成,其中該導電性構 件在側面包圍該夾頭之大部份者。 1 5.如申請專利範圍第1項之總成,其中該遮蔽電位在 側面與該夾頭隔開者。 1 6.如申請專利範圍第1 5項之總成,其中該遮蔽電位 設備在側面與該夾頭隔開者。 1 7.如申請專利範圍第1項之總成,其中該測試中裝置 係利用真空維持於該夾頭上者。 1 8.如申請專利範圍第1 0項之總成,其中該光學透過 性材料與該夾頭之上表面實質上共平面者。 1 9.如申請專利範圍第1 0項之總成,其中該光學透過 性材料和該夾頭組合,當該測試中裝置支持於其上時,即 支持該測試中裝置之大部份表面積者。 2 0. —種測試總成,包括: (a )夾頭,供支持測試中裝置; (b) 該夾頭界定光程,對光學信號具有透過性; (c) 導電性構件,至少部份位於該光程内,其中該
第15頁 1265299 六、申請專利範圍 光學信號通過該導電性構件之至少一部份,而 該導電性構件係連接於保衛電位者。 2 1.如申請專利範圍第2 0項之總成,其中該導電性構 件位於該測試中裝置上方者。 2 2.如申請專利範圍第2 0項之總成,其中該導電性構 件位於測試中裝置下方者。 2 3.如申請專利範圍第2 2項之總成,又包括另一導電 性構件,至少部份位於在該測試中裝置上方之該光程中, 其中該光學信號通過該另一導電性構件之至少一部份,而 該另一導電性構件係接至該保衛電位者。
2 4.如申請專利範圍第2 0項之總成,其中該夾頭具有 導電性表面,當該測試中裝置支持於其上時,即與該測試 中裝置呈面對面銜接者。 2 5.如申請專利範圍第2 0項之總成,其中該夾頭具有 平坦上面,供支持該測試中裝置者。 2 6.如申請專利範圍第2 0項之總成,其中該夾頭界定 貫穿之實質上圓形光程者。 2 7.如申請專利範圍第2 0項之總成,其中該光學信號 源自該測試中裝置者。 2 8.如申請專利範圍第2 0項之總成,其中該光學信號 源自與該測試中裝置隔開之位置者。
2 9.如申請專利範圍第2 0項之總成,其中該夾頭和該 導電性構件彼此隔開者。 3 0.如申請專利範圍第2 0項之總成,其中遮蔽電位在
第16頁 1265299 六、申請專利範圍 側面與該夾頭隔開者。 3 1.如申請專利範圍第2 0項之總成,其中該測試中裝 置係利用真空維持在該夾頭上者。 3 2 . —種測試總成,包括: (a) 夾頭,具有表面供支持測試中裝置; (b) 由該表面界定之複數開口; (c) 真空系統,適於對該複數開口提供真空;以及 (d) 選擇機制,適於選擇不同組之該複數開口,其 中該不同組至少其一與該組之另一不同心者。 3 3.如申請專利範圍第3 2項之測試總成,其中該真空 系統係利用至少一腔孔,與該複數開口相連者。 3 4.如申請專利範圍第32項之測試總成,其中該不同 組至少其二含有至少一同樣之該開|口者。 3 5. —種測試總成,包括: (a) 夾頭,具有表面供支持測試中裝置; (b) 由該表面界定之複數開口; (c) 選擇機制,適於對不同組之該複數開口提供真 空,其中該不同組至少其一與另一組不同心 者。 3 6.如申請專利範圍第3 5項之測試總成,其中真空系 統利用至少一腔孔,與該複數開口相接者。 3 7.如申請專利範圍第3 5項之測試總成,其中該不同 組至少其二含有至少一同樣該開口者。
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-
2002
- 2002-08-07 US US10/214,888 patent/US6836135B2/en not_active Expired - Fee Related
- 2002-08-07 EP EP02757046A patent/EP1432546A4/en not_active Withdrawn
- 2002-08-07 WO PCT/US2002/025255 patent/WO2003020467A1/en not_active Application Discontinuation
- 2002-08-30 TW TW091119746A patent/TWI265299B/zh not_active IP Right Cessation
-
2004
- 2004-08-06 US US10/912,789 patent/US7268533B2/en not_active Expired - Fee Related
-
2007
- 2007-08-07 US US11/890,987 patent/US20070273387A1/en not_active Abandoned
Also Published As
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EP1432546A4 (en) | 2006-06-07 |
WO2003020467A1 (en) | 2003-03-13 |
US6836135B2 (en) | 2004-12-28 |
US7268533B2 (en) | 2007-09-11 |
US20030042889A1 (en) | 2003-03-06 |
US20050007581A1 (en) | 2005-01-13 |
EP1432546A1 (en) | 2004-06-30 |
US20070273387A1 (en) | 2007-11-29 |
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