TWI263866B - Chemical amplification type positive resist composition - Google Patents

Chemical amplification type positive resist composition

Info

Publication number
TWI263866B
TWI263866B TW089100429A TW89100429A TWI263866B TW I263866 B TWI263866 B TW I263866B TW 089100429 A TW089100429 A TW 089100429A TW 89100429 A TW89100429 A TW 89100429A TW I263866 B TWI263866 B TW I263866B
Authority
TW
Taiwan
Prior art keywords
resist composition
positive resist
alkyl
chemical amplification
type positive
Prior art date
Application number
TW089100429A
Other languages
English (en)
Inventor
Yasunori Uetani
Hiroki Inoue
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Application granted granted Critical
Publication of TWI263866B publication Critical patent/TWI263866B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/28Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C309/57Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C07C309/58Carboxylic acid groups or esters thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW089100429A 1999-01-18 2000-01-12 Chemical amplification type positive resist composition TWI263866B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP909699 1999-01-18

Publications (1)

Publication Number Publication Date
TWI263866B true TWI263866B (en) 2006-10-11

Family

ID=11711095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089100429A TWI263866B (en) 1999-01-18 2000-01-12 Chemical amplification type positive resist composition

Country Status (7)

Country Link
US (2) US6383713B1 (zh)
EP (1) EP1020767B1 (zh)
KR (1) KR100638368B1 (zh)
CN (1) CN1184536C (zh)
DE (1) DE60032190T2 (zh)
SG (1) SG76000A1 (zh)
TW (1) TWI263866B (zh)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001684A1 (fr) 1998-07-03 2000-01-13 Nec Corporation Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci
JP2001215704A (ja) * 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
EP1314713A4 (en) * 2000-07-27 2005-10-05 Tokuyama Corp PROCESSES FOR PREPARING 2-ALKYL-2-ADAMANTYL ESTERS
DE10058951A1 (de) * 2000-11-28 2002-06-20 Infineon Technologies Ag Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung
EP1340125A2 (en) * 2000-11-29 2003-09-03 E.I. Du Pont De Nemours And Company Protecting groups in polymers, photoresists and processes for microlithography
JP3945741B2 (ja) * 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
US6521781B2 (en) * 2000-12-15 2003-02-18 Mitsubishi Gas Chemical Company, Inc. Production of 2-hydrocarbyl-2-adamantyl acrylate compounds
AU2002255598A1 (en) * 2001-02-25 2002-09-12 Shipley Company, L.L.C. Polymers and photoresist compositions
JP4524940B2 (ja) * 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4117112B2 (ja) * 2001-03-30 2008-07-16 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6517994B2 (en) * 2001-04-10 2003-02-11 Shin-Etsu Chemical Co., Ltd. Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition
JP4393010B2 (ja) * 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
US6830866B2 (en) * 2001-06-15 2004-12-14 Shi-Etsu Chemical Co., Ltd. Resist composition and patterning process
TW581941B (en) * 2001-06-21 2004-04-01 Fuji Photo Film Co Ltd Positive resist composition
US7776505B2 (en) * 2001-11-05 2010-08-17 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US6818379B2 (en) * 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
CN100520579C (zh) * 2001-12-03 2009-07-29 东京应化工业株式会社 正型抗蚀剂组合物及使用其形成抗蚀图形的方法
JP3895224B2 (ja) * 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
KR20030095046A (ko) * 2002-06-11 2003-12-18 주식회사 이엔에프테크놀로지 2-알콕시알킬-2-아다만틸 (메타)아크릴레이트 및 그제조방법
CN100371826C (zh) * 2002-08-26 2008-02-27 住友化学工业株式会社 磺酸盐和光刻胶组合物
JP2004219989A (ja) * 2002-12-25 2004-08-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びそれを用いたレジストパターンの形成方法
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
US7022459B2 (en) * 2003-03-14 2006-04-04 Fuji Photo Film Co., Ltd. Photosensitive composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
DE602004008468T2 (de) * 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
WO2005000924A1 (en) * 2003-06-26 2005-01-06 Symyx Technologies, Inc. Photoresist polymers
US7250475B2 (en) * 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
US7001706B2 (en) * 2003-07-18 2006-02-21 Sumitomo Chemical Company, Limited Sulfonate and a resist composition
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4343800B2 (ja) * 2004-08-30 2009-10-14 富士フイルム株式会社 ポジ型感光性組成物
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP4942925B2 (ja) * 2004-06-18 2012-05-30 東京応化工業株式会社 高分子化合物、ポジ型レジスト組成物及びレジストパターン形成方法
TWI375121B (en) * 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
JP4506968B2 (ja) * 2005-02-04 2010-07-21 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7541131B2 (en) * 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4579019B2 (ja) * 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
TWI378325B (en) * 2005-03-30 2012-12-01 Sumitomo Chemical Co Salt suitable for an acid generator and a chemically amplified resist composition containing the same
TWI394004B (zh) * 2005-03-30 2013-04-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型光阻組成物
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
KR20070045980A (ko) * 2005-10-28 2007-05-02 스미또모 가가꾸 가부시키가이샤 산 발생제에 적합한 염 및 이를 함유하는 화학증폭형레지스트 조성물
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
US7786322B2 (en) * 2005-11-21 2010-08-31 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
TWI381246B (zh) * 2005-12-27 2013-01-01 Sumitomo Chemical Co 適用於酸產生劑的鹽及含有該鹽之化學增幅型阻劑組成物
JP4792299B2 (ja) * 2006-02-07 2011-10-12 富士フイルム株式会社 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法
TWI421635B (zh) * 2006-06-09 2014-01-01 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含該鹽之化學放大正型光阻組成物
US7862980B2 (en) * 2006-08-02 2011-01-04 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI412888B (zh) * 2006-08-18 2013-10-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物
TWI402249B (zh) * 2006-08-22 2013-07-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正型光阻組成物
CN101196687A (zh) * 2006-12-06 2008-06-11 住友化学株式会社 化学放大型抗蚀剂组合物
TWI437364B (zh) * 2006-12-14 2014-05-11 Sumitomo Chemical Co 化學放大型阻劑組成物
JP2008209889A (ja) * 2007-01-31 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
JP5066405B2 (ja) * 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、x線又はeuv用レジスト組成物及び該組成物を用いたパターン形成方法
TWI470345B (zh) * 2007-08-03 2015-01-21 Fujifilm Corp 含新穎化合物之光阻組成物、使用該光阻組成物之圖案形成方法、及新穎化合物
US8685616B2 (en) * 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP5544098B2 (ja) 2008-09-26 2014-07-09 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法
JP5548427B2 (ja) * 2009-10-30 2014-07-16 富士フイルム株式会社 組成物、レジスト膜、パターン形成方法、及びインクジェット記録方法
JP5618557B2 (ja) * 2010-01-29 2014-11-05 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP6049250B2 (ja) 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
US9213234B2 (en) * 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
US9146469B2 (en) 2013-03-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Middle layer composition for trilayer patterning stack
EP3741010B1 (en) 2018-04-23 2021-09-29 Wavetherm Corporation Plug-in module injector lever assembly, kit, and method
CN113717314B (zh) * 2021-08-26 2023-09-22 江苏集萃光敏电子材料研究所有限公司 一种光敏成膜树脂、光刻胶组合物及其制备方法
KR20240030082A (ko) * 2022-08-29 2024-03-07 삼성전자주식회사 카르복실산염, 이를 포함한 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US6013416A (en) 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
TW482946B (en) 1997-01-29 2002-04-11 Sumitomo Chemical Co Chemical amplification type positive photoresist composition
JP3994486B2 (ja) 1997-04-14 2007-10-17 住友化学株式会社 化学増幅型ポジ型レジスト組成物およびそのための共重合体
US6120972A (en) * 1997-09-02 2000-09-19 Jsr Corporation Radiation-sensitive resin composition
CN1190706C (zh) 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物

Also Published As

Publication number Publication date
CN1184536C (zh) 2005-01-12
EP1020767A1 (en) 2000-07-19
DE60032190T2 (de) 2007-10-11
SG76000A1 (en) 2000-10-24
US6383713B1 (en) 2002-05-07
EP1020767B1 (en) 2006-12-06
DE60032190D1 (de) 2007-01-18
US20020081523A1 (en) 2002-06-27
US6548221B2 (en) 2003-04-15
KR100638368B1 (ko) 2006-10-25
CN1261171A (zh) 2000-07-26
KR20000076477A (ko) 2000-12-26

Similar Documents

Publication Publication Date Title
TWI263866B (en) Chemical amplification type positive resist composition
EP1382460B8 (en) Photosensitive composition and planographic printing plate using the same
EP1338922A3 (en) Positive resist composition
EP1164434A3 (en) Radiation-sensitive resin composition
KR900700923A (ko) 포토레지스트 조성물
EP1128212A3 (en) Chemically amplified positive resist composition
MY127941A (en) Chemically amplified radiation sensitive composition containing onium salt type photoacid generator
MY123712A (en) Photosensitive resin composition
IL138518A0 (en) Radiation- sensitive resin composition
EP0989458A3 (en) Chemically amplified positive photoresist composition
TW200619851A (en) Resist composition electron beam of EUV(extreme ultraviolet rays) and process for forming resist pattern
TWI257032B (en) Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group
TW200628983A (en) Positive resist composition for immersion lithography and process for forming resist pattern
WO1999009965A3 (en) Anti-inflammatory agent
TW200613334A (en) (Methyl)acrylate, polymer and resist compound
MY126017A (en) Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
IL174569A0 (en) Positive type radiation-sensitive resin composition
EP1253470A3 (en) Radiation-sensitive resin composition
PH21005A (en) Negative photoresist compositions with polyglutarimide polymer
ES2074828T3 (es) Copoliester degradable de 4-hidroxi-prolina y composicion farmaceutica que lo contiene.
TW200604732A (en) A chemically amplified positive resist composition
WO2008149701A1 (ja) 感放射線性樹脂組成物
MY121402A (en) Photosensitive polymer having cyclic backbone and resist composition comprising the same
GB9821756D0 (en) Improvements in relation to electronic parts
WO2005001578A3 (en) Developer composition for resists and method for formation of resist pattern

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees