TWI263866B - Chemical amplification type positive resist composition - Google Patents
Chemical amplification type positive resist compositionInfo
- Publication number
- TWI263866B TWI263866B TW089100429A TW89100429A TWI263866B TW I263866 B TWI263866 B TW I263866B TW 089100429 A TW089100429 A TW 089100429A TW 89100429 A TW89100429 A TW 89100429A TW I263866 B TWI263866 B TW I263866B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist composition
- positive resist
- alkyl
- chemical amplification
- type positive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/57—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
- C07C309/58—Carboxylic acid groups or esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP909699 | 1999-01-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI263866B true TWI263866B (en) | 2006-10-11 |
Family
ID=11711095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089100429A TWI263866B (en) | 1999-01-18 | 2000-01-12 | Chemical amplification type positive resist composition |
Country Status (7)
Country | Link |
---|---|
US (2) | US6383713B1 (zh) |
EP (1) | EP1020767B1 (zh) |
KR (1) | KR100638368B1 (zh) |
CN (1) | CN1184536C (zh) |
DE (1) | DE60032190T2 (zh) |
SG (1) | SG76000A1 (zh) |
TW (1) | TWI263866B (zh) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000001684A1 (fr) | 1998-07-03 | 2000-01-13 | Nec Corporation | Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci |
JP2001215704A (ja) * | 2000-01-31 | 2001-08-10 | Sumitomo Chem Co Ltd | 化学増幅型ポジ型レジスト組成物 |
EP1314713A4 (en) * | 2000-07-27 | 2005-10-05 | Tokuyama Corp | PROCESSES FOR PREPARING 2-ALKYL-2-ADAMANTYL ESTERS |
DE10058951A1 (de) * | 2000-11-28 | 2002-06-20 | Infineon Technologies Ag | Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung |
EP1340125A2 (en) * | 2000-11-29 | 2003-09-03 | E.I. Du Pont De Nemours And Company | Protecting groups in polymers, photoresists and processes for microlithography |
JP3945741B2 (ja) * | 2000-12-04 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
US6521781B2 (en) * | 2000-12-15 | 2003-02-18 | Mitsubishi Gas Chemical Company, Inc. | Production of 2-hydrocarbyl-2-adamantyl acrylate compounds |
AU2002255598A1 (en) * | 2001-02-25 | 2002-09-12 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
JP4524940B2 (ja) * | 2001-03-15 | 2010-08-18 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4117112B2 (ja) * | 2001-03-30 | 2008-07-16 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
US6517994B2 (en) * | 2001-04-10 | 2003-02-11 | Shin-Etsu Chemical Co., Ltd. | Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition |
JP4393010B2 (ja) * | 2001-04-10 | 2010-01-06 | 富士通マイクロエレクトロニクス株式会社 | 化学増幅レジスト組成物及びそれを用いたパターン形成方法 |
US6830866B2 (en) * | 2001-06-15 | 2004-12-14 | Shi-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
TW581941B (en) * | 2001-06-21 | 2004-04-01 | Fuji Photo Film Co Ltd | Positive resist composition |
US7776505B2 (en) * | 2001-11-05 | 2010-08-17 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
US6818379B2 (en) * | 2001-12-03 | 2004-11-16 | Sumitomo Chemical Company, Limited | Sulfonium salt and use thereof |
CN100520579C (zh) * | 2001-12-03 | 2009-07-29 | 东京应化工业株式会社 | 正型抗蚀剂组合物及使用其形成抗蚀图形的方法 |
JP3895224B2 (ja) * | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
JP3841399B2 (ja) * | 2002-02-21 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
KR20030095046A (ko) * | 2002-06-11 | 2003-12-18 | 주식회사 이엔에프테크놀로지 | 2-알콕시알킬-2-아다만틸 (메타)아크릴레이트 및 그제조방법 |
CN100371826C (zh) * | 2002-08-26 | 2008-02-27 | 住友化学工业株式会社 | 磺酸盐和光刻胶组合物 |
JP2004219989A (ja) * | 2002-12-25 | 2004-08-05 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びそれを用いたレジストパターンの形成方法 |
JP4434762B2 (ja) * | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
US7022459B2 (en) * | 2003-03-14 | 2006-04-04 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
DE602004008468T2 (de) * | 2003-06-26 | 2008-05-21 | Jsr Corp. | Photoresistzusammensetzungen |
WO2005000924A1 (en) * | 2003-06-26 | 2005-01-06 | Symyx Technologies, Inc. | Photoresist polymers |
US7250475B2 (en) * | 2003-06-26 | 2007-07-31 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
US7001706B2 (en) * | 2003-07-18 | 2006-02-21 | Sumitomo Chemical Company, Limited | Sulfonate and a resist composition |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
JP4343800B2 (ja) * | 2004-08-30 | 2009-10-14 | 富士フイルム株式会社 | ポジ型感光性組成物 |
JP4279237B2 (ja) * | 2004-05-28 | 2009-06-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP4942925B2 (ja) * | 2004-06-18 | 2012-05-30 | 東京応化工業株式会社 | 高分子化合物、ポジ型レジスト組成物及びレジストパターン形成方法 |
TWI375121B (en) * | 2004-06-28 | 2012-10-21 | Fujifilm Corp | Photosensitive composition and method for forming pattern using the same |
JP4506968B2 (ja) * | 2005-02-04 | 2010-07-21 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US7541131B2 (en) * | 2005-02-18 | 2009-06-02 | Fujifilm Corporation | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition |
JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4579019B2 (ja) * | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
TWI378325B (en) * | 2005-03-30 | 2012-12-01 | Sumitomo Chemical Co | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
TWI394004B (zh) * | 2005-03-30 | 2013-04-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型光阻組成物 |
US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
KR20070045980A (ko) * | 2005-10-28 | 2007-05-02 | 스미또모 가가꾸 가부시키가이샤 | 산 발생제에 적합한 염 및 이를 함유하는 화학증폭형레지스트 조성물 |
US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
US7786322B2 (en) * | 2005-11-21 | 2010-08-31 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
TWI381246B (zh) * | 2005-12-27 | 2013-01-01 | Sumitomo Chemical Co | 適用於酸產生劑的鹽及含有該鹽之化學增幅型阻劑組成物 |
JP4792299B2 (ja) * | 2006-02-07 | 2011-10-12 | 富士フイルム株式会社 | 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法 |
TWI421635B (zh) * | 2006-06-09 | 2014-01-01 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含該鹽之化學放大正型光阻組成物 |
US7862980B2 (en) * | 2006-08-02 | 2011-01-04 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same |
TWI412888B (zh) * | 2006-08-18 | 2013-10-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物 |
TWI402249B (zh) * | 2006-08-22 | 2013-07-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型正型光阻組成物 |
CN101196687A (zh) * | 2006-12-06 | 2008-06-11 | 住友化学株式会社 | 化学放大型抗蚀剂组合物 |
TWI437364B (zh) * | 2006-12-14 | 2014-05-11 | Sumitomo Chemical Co | 化學放大型阻劑組成物 |
JP2008209889A (ja) * | 2007-01-31 | 2008-09-11 | Fujifilm Corp | ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 |
US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
JP5066405B2 (ja) * | 2007-08-02 | 2012-11-07 | 富士フイルム株式会社 | 電子線、x線又はeuv用レジスト組成物及び該組成物を用いたパターン形成方法 |
TWI470345B (zh) * | 2007-08-03 | 2015-01-21 | Fujifilm Corp | 含新穎化合物之光阻組成物、使用該光阻組成物之圖案形成方法、及新穎化合物 |
US8685616B2 (en) * | 2008-06-10 | 2014-04-01 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
JP5544098B2 (ja) | 2008-09-26 | 2014-07-09 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法 |
JP5548427B2 (ja) * | 2009-10-30 | 2014-07-16 | 富士フイルム株式会社 | 組成物、レジスト膜、パターン形成方法、及びインクジェット記録方法 |
JP5618557B2 (ja) * | 2010-01-29 | 2014-11-05 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法 |
JP6049250B2 (ja) | 2010-11-30 | 2016-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤 |
US9223208B2 (en) | 2011-12-29 | 2015-12-29 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition |
US9261786B2 (en) | 2012-04-02 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of photolithography |
US9213234B2 (en) * | 2012-06-01 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of lithography |
US9146469B2 (en) | 2013-03-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Middle layer composition for trilayer patterning stack |
EP3741010B1 (en) | 2018-04-23 | 2021-09-29 | Wavetherm Corporation | Plug-in module injector lever assembly, kit, and method |
CN113717314B (zh) * | 2021-08-26 | 2023-09-22 | 江苏集萃光敏电子材料研究所有限公司 | 一种光敏成膜树脂、光刻胶组合物及其制备方法 |
KR20240030082A (ko) * | 2022-08-29 | 2024-03-07 | 삼성전자주식회사 | 카르복실산염, 이를 포함한 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5558971A (en) | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
US6013416A (en) | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
TW482946B (en) | 1997-01-29 | 2002-04-11 | Sumitomo Chemical Co | Chemical amplification type positive photoresist composition |
JP3994486B2 (ja) | 1997-04-14 | 2007-10-17 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物およびそのための共重合体 |
US6120972A (en) * | 1997-09-02 | 2000-09-19 | Jsr Corporation | Radiation-sensitive resin composition |
CN1190706C (zh) | 1998-08-26 | 2005-02-23 | 住友化学工业株式会社 | 一种化学增强型正光刻胶组合物 |
-
2000
- 2000-01-12 TW TW089100429A patent/TWI263866B/zh not_active IP Right Cessation
- 2000-01-14 US US09/482,359 patent/US6383713B1/en not_active Expired - Lifetime
- 2000-01-15 SG SG200000248A patent/SG76000A1/en unknown
- 2000-01-17 CN CNB001003038A patent/CN1184536C/zh not_active Expired - Fee Related
- 2000-01-17 KR KR1020000002059A patent/KR100638368B1/ko not_active IP Right Cessation
- 2000-01-18 DE DE60032190T patent/DE60032190T2/de not_active Expired - Lifetime
- 2000-01-18 EP EP00100239A patent/EP1020767B1/en not_active Expired - Lifetime
-
2001
- 2001-12-06 US US10/003,441 patent/US6548221B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1184536C (zh) | 2005-01-12 |
EP1020767A1 (en) | 2000-07-19 |
DE60032190T2 (de) | 2007-10-11 |
SG76000A1 (en) | 2000-10-24 |
US6383713B1 (en) | 2002-05-07 |
EP1020767B1 (en) | 2006-12-06 |
DE60032190D1 (de) | 2007-01-18 |
US20020081523A1 (en) | 2002-06-27 |
US6548221B2 (en) | 2003-04-15 |
KR100638368B1 (ko) | 2006-10-25 |
CN1261171A (zh) | 2000-07-26 |
KR20000076477A (ko) | 2000-12-26 |
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