TWI262556B - Reactor assembly and processing method - Google Patents
Reactor assembly and processing method Download PDFInfo
- Publication number
- TWI262556B TWI262556B TW092102493A TW92102493A TWI262556B TW I262556 B TWI262556 B TW I262556B TW 092102493 A TW092102493 A TW 092102493A TW 92102493 A TW92102493 A TW 92102493A TW I262556 B TWI262556 B TW I262556B
- Authority
- TW
- Taiwan
- Prior art keywords
- assembly
- fluid
- gas
- substrate
- processing chamber
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000012530 fluid Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 60
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- 238000012545 processing Methods 0.000 claims description 81
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 241000251468 Actinopterygii Species 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 244000241257 Cucumis melo Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000006394 Sorghum bicolor Species 0.000 description 1
- 235000011684 Sorghum saccharatum Nutrition 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/071,908 US7163587B2 (en) | 2002-02-08 | 2002-02-08 | Reactor assembly and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200308012A TW200308012A (en) | 2003-12-16 |
| TWI262556B true TWI262556B (en) | 2006-09-21 |
Family
ID=27659351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092102493A TWI262556B (en) | 2002-02-08 | 2003-02-07 | Reactor assembly and processing method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7163587B2 (de) |
| EP (1) | EP1472719A2 (de) |
| JP (1) | JP4352234B2 (de) |
| KR (1) | KR20040079993A (de) |
| CN (1) | CN1628368A (de) |
| AU (1) | AU2003213000A1 (de) |
| TW (1) | TWI262556B (de) |
| WO (1) | WO2003067635A2 (de) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6777352B2 (en) * | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
| JP4338355B2 (ja) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
| US7821655B2 (en) * | 2004-02-09 | 2010-10-26 | Axcelis Technologies, Inc. | In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction |
| EP1866465A2 (de) | 2005-01-18 | 2007-12-19 | ASM America, Inc. | Reaktionssystem zur herstellung eines dünnen films |
| US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
| US8398816B1 (en) * | 2006-03-28 | 2013-03-19 | Novellus Systems, Inc. | Method and apparatuses for reducing porogen accumulation from a UV-cure chamber |
| KR100757356B1 (ko) * | 2006-08-03 | 2007-09-11 | 주식회사 에스에프에이 | 화학 기상 증착장치 |
| DE102007002415B4 (de) * | 2007-01-17 | 2011-04-28 | Atlas Material Testing Technology Gmbh | Vorrichtung zur Licht- oder Bewitterungsprüfung enthaltend ein Probengehäuse mit integriertem UV-Strahlungsfilter |
| US20080296258A1 (en) * | 2007-02-08 | 2008-12-04 | Elliott David J | Plenum reactor system |
| US20090096349A1 (en) * | 2007-04-26 | 2009-04-16 | Moshtagh Vahid S | Cross flow cvd reactor |
| FI123322B (fi) * | 2007-12-17 | 2013-02-28 | Beneq Oy | Menetelmä ja laitteisto plasman muodostamiseksi |
| JP5060324B2 (ja) * | 2008-01-31 | 2012-10-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び処理容器 |
| JP2009239082A (ja) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | ガス供給装置、処理装置及び処理方法 |
| WO2010005933A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber |
| JP5661622B2 (ja) * | 2008-07-07 | 2015-01-28 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | プラズマ処理チャンバで用いるための真空ギャップを備えたプラズマ対向プローブ装置 |
| US8603243B2 (en) * | 2008-07-31 | 2013-12-10 | The United States Of America, As Represented By The Secretary Of The Navy | Tracking carbon to silicon ratio in situ during silicon carbide growth |
| US8344318B2 (en) * | 2008-09-11 | 2013-01-01 | Varian Semiconductor Equipment Associates, Inc. | Technique for monitoring and controlling a plasma process with an ion mobility spectrometer |
| US9328417B2 (en) | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
| JP5310512B2 (ja) * | 2009-12-02 | 2013-10-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP5410348B2 (ja) * | 2010-03-26 | 2014-02-05 | 株式会社豊田中央研究所 | 表面処理装置 |
| EP2553143B1 (de) | 2010-03-29 | 2017-10-04 | Koolerheadz | Modulare gasinjektionsvorrichtung |
| FR2957938B1 (fr) * | 2010-03-29 | 2012-10-05 | Koolerheadz | Dispositif d'injection de gaz avec vitesse de gaz uniforme |
| FR2957939B1 (fr) * | 2010-03-29 | 2012-08-17 | Koolerheadz | Dispositif d'injection de gaz modulaire |
| KR101685629B1 (ko) * | 2011-04-29 | 2016-12-12 | 한국에이에스엠지니텍 주식회사 | 수평 흐름 원자층 증착 장치 |
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| CN107557758A (zh) * | 2013-05-01 | 2018-01-09 | 应用材料公司 | 用于控制外延沉积腔室流量的注入及排放设计 |
| US9028765B2 (en) | 2013-08-23 | 2015-05-12 | Lam Research Corporation | Exhaust flow spreading baffle-riser to optimize remote plasma window clean |
| JP6309252B2 (ja) * | 2013-11-21 | 2018-04-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
| JP6198584B2 (ja) * | 2013-11-21 | 2017-09-20 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
| US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
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| JP6050860B1 (ja) * | 2015-05-26 | 2016-12-21 | 株式会社日本製鋼所 | プラズマ原子層成長装置 |
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| CN106544646B (zh) * | 2015-09-18 | 2019-02-01 | 沈阳拓荆科技有限公司 | 一种原子层沉积设备 |
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| DE102016101003A1 (de) | 2016-01-21 | 2017-07-27 | Aixtron Se | CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse |
| US10294562B2 (en) * | 2016-04-05 | 2019-05-21 | Aixtron Se | Exhaust manifold in a CVD reactor |
| US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
| US11639865B2 (en) | 2019-08-05 | 2023-05-02 | Ichor Systems, Inc. | Laminar flow restrictor |
| US10446420B2 (en) | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
| US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
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| US11114283B2 (en) * | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
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| US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
| US11841036B2 (en) | 2019-08-05 | 2023-12-12 | Ichor Systems, Inc. | Laminar flow restrictor and seal for same |
| CN111455458B (zh) * | 2019-09-18 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 外延装置及应用于外延装置的进气结构 |
| FI128855B (en) * | 2019-09-24 | 2021-01-29 | Picosun Oy | FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS |
| KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
| EP4280987A1 (de) * | 2021-01-23 | 2023-11-29 | Sheperak, Thomas J. | Plasmagasgenerator |
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-
2002
- 2002-02-08 US US10/071,908 patent/US7163587B2/en not_active Expired - Lifetime
-
2003
- 2003-02-07 TW TW092102493A patent/TWI262556B/zh not_active IP Right Cessation
- 2003-02-10 KR KR10-2004-7012260A patent/KR20040079993A/ko not_active Application Discontinuation
- 2003-02-10 JP JP2003566884A patent/JP4352234B2/ja not_active Expired - Fee Related
- 2003-02-10 EP EP03709045A patent/EP1472719A2/de not_active Withdrawn
- 2003-02-10 CN CNA038034239A patent/CN1628368A/zh active Pending
- 2003-02-10 WO PCT/US2003/003998 patent/WO2003067635A2/en active Application Filing
- 2003-02-10 AU AU2003213000A patent/AU2003213000A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US7163587B2 (en) | 2007-01-16 |
| AU2003213000A1 (en) | 2003-09-02 |
| US20030150560A1 (en) | 2003-08-14 |
| CN1628368A (zh) | 2005-06-15 |
| JP4352234B2 (ja) | 2009-10-28 |
| TW200308012A (en) | 2003-12-16 |
| AU2003213000A8 (en) | 2003-09-02 |
| WO2003067635A2 (en) | 2003-08-14 |
| WO2003067635A3 (en) | 2003-11-27 |
| EP1472719A2 (de) | 2004-11-03 |
| KR20040079993A (ko) | 2004-09-16 |
| JP2005517295A (ja) | 2005-06-09 |
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