JP2021527328A - 保護コーティングを有するプロセスチャンバプロセスキット - Google Patents
保護コーティングを有するプロセスチャンバプロセスキット Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000011253 protective coating Substances 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 64
- 238000000576 coating method Methods 0.000 claims abstract description 35
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 46
- 238000009832 plasma treatment Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims 7
- 238000010586 diagram Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 55
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- -1 plasma generators Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【選択図】図1B
Description
Claims (15)
- プラズマ処理チャンバ内で使用されるチャンバコンポーネントであって、
粗い非平面表面を含む金属ベース材料であって、前記粗い非平面表面が、4マイクロインチから80マイクロインチの間の平均表面粗さ(Ra)を有する、金属ベース材料と、
前記粗い非平面表面上に形成された平面シリカコーティングであって、
前記粗い非平面表面のRaよりも小さいRaを有する表面と、
約0.2ミクロンから約10ミクロンの間の厚さと、
体積で1%未満の多孔度とを有し、
2E12atoms/cm2未満のアルミニウムを含有する、
平面シリカコーティングと、
を含むチャンバコンポーネント。 - 前記金属ベース材料が、アルミニウムを含む、請求項1に記載のチャンバコンポーネント。
- 前記金属ベース材料が、ガス分配シャワーヘッドを含む、請求項1に記載のチャンバコンポーネント。
- 前記金属ベース材料が、ノズルアセンブリを含む、請求項1に記載のチャンバコンポーネント。
- 前記金属ベース材料が、バッフルを含む、請求項1に記載のチャンバコンポーネント。
- 前記金属ベース材料が、ライナーを含む、請求項1に記載のチャンバコンポーネント。
- 前記ライナーが、カソードライナーを含む、請求項6に記載のチャンバコンポーネント。
- プラズマ処理環境で使用するためのチャンバコンポーネントを製造するための方法であって、
金属材料から前記チャンバコンポーネントの本体を形成することと、
前記本体上にシリカの層を堆積させることと、
前記シリカの層および前記金属材料を加熱することと、
を含み、前記シリカの層が、
粗い非平面表面のRa表面粗さよりも小さいRa表面粗さを有する表面と、
約0.2ミクロンから約10ミクロンの間の厚さと、
体積で1%未満の多孔度とを含み、
2E12atoms/cm2未満のアルミニウムを含有する、
方法。 - 金属ベース材料が、アルミニウムを含む、請求項8に記載の方法。
- 金属ベース材料が、ガス分配シャワーヘッドを含む、請求項8に記載の方法。
- 金属ベース材料が、ノズルアセンブリを含む、請求項8に記載の方法。
- 金属ベース材料が、バッフルを含む、請求項8に記載の方法。
- 金属ベース材料が、ライナーを含む、請求項8に記載の方法。
- 前記ライナーが、カソードライナーを含む、請求項13に記載の方法。
- 粗い非平面表面を含む金属ベース材料であって、前記粗い非平面表面が、4マイクロインチから80マイクロインチの間の平均表面粗さ(Ra)を有する、金属ベース材料と、
前記粗い非平面表面上に形成された平面シリカコーティングであって、前記粗い非平面表面のRaよりも小さいRaを有する表面と、約0.2ミクロンから約10ミクロンの間の厚さと、体積で1%未満の多孔度とを有し、2E12atoms/cm2未満のアルミニウムを含有する平面シリカコーティングと、
を含むチャンバコンポーネントを含むプロセスチャンバを、窒素または酸素を含むプラズマでプラズマ処理することと、
基板であって、スタックが前記基板上に配置されている基板を、前記プロセスチャンバ内に配置することと、
前記基板上に配置された前記スタックを、プラズマ処理することと、
を含む方法。
Priority Applications (1)
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JP2023210900A JP2024037895A (ja) | 2018-06-14 | 2023-12-14 | 保護コーティングを有するプロセスチャンバプロセスキット |
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US201862685098P | 2018-06-14 | 2018-06-14 | |
US62/685,098 | 2018-06-14 | ||
PCT/US2019/033259 WO2019240915A1 (en) | 2018-06-14 | 2019-05-21 | Process chamber process kit with protective coating |
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JP2021527328A true JP2021527328A (ja) | 2021-10-11 |
JPWO2019240915A5 JPWO2019240915A5 (ja) | 2022-05-30 |
JP7405776B2 JP7405776B2 (ja) | 2023-12-26 |
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JP2023210900A Pending JP2024037895A (ja) | 2018-06-14 | 2023-12-14 | 保護コーティングを有するプロセスチャンバプロセスキット |
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US (2) | US20190385825A1 (ja) |
JP (2) | JP7405776B2 (ja) |
KR (1) | KR20210008931A (ja) |
CN (1) | CN112236839A (ja) |
TW (1) | TWI828704B (ja) |
WO (1) | WO2019240915A1 (ja) |
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US11664247B2 (en) * | 2020-10-16 | 2023-05-30 | Applied Materials, Inc. | Dynamic interface for providing a symmetric radio frequency return path |
WO2024097505A1 (en) * | 2022-10-31 | 2024-05-10 | Lam Research Corporation | Component with a dual layer hermetic atomic layer deposition coatings for a semiconductor processing chamber |
Citations (2)
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JPH11238722A (ja) * | 1997-12-17 | 1999-08-31 | Matsushita Electron Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2016525287A (ja) * | 2013-07-19 | 2016-08-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着 |
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US6251216B1 (en) * | 1997-12-17 | 2001-06-26 | Matsushita Electronics Corporation | Apparatus and method for plasma processing |
US20040033361A1 (en) * | 2002-08-06 | 2004-02-19 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Component of glass-like carbon for CVD apparatus and process for production thereof |
US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
JP4606121B2 (ja) * | 2004-01-29 | 2011-01-05 | 京セラ株式会社 | 耐食膜積層耐食性部材およびその製造方法 |
JP2006128370A (ja) * | 2004-10-28 | 2006-05-18 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラムおよび記録媒体 |
KR100915722B1 (ko) * | 2005-06-23 | 2009-09-04 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치 |
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2019
- 2019-05-21 JP JP2020568515A patent/JP7405776B2/ja active Active
- 2019-05-21 WO PCT/US2019/033259 patent/WO2019240915A1/en active Application Filing
- 2019-05-21 US US16/418,274 patent/US20190385825A1/en active Pending
- 2019-05-21 KR KR1020217001257A patent/KR20210008931A/ko unknown
- 2019-05-21 CN CN201980037849.7A patent/CN112236839A/zh active Pending
- 2019-06-12 TW TW108120249A patent/TWI828704B/zh active
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2023
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JPH11238722A (ja) * | 1997-12-17 | 1999-08-31 | Matsushita Electron Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2016525287A (ja) * | 2013-07-19 | 2016-08-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着 |
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JP2024037895A (ja) | 2024-03-19 |
CN112236839A (zh) | 2021-01-15 |
TW202013426A (zh) | 2020-04-01 |
US20190385825A1 (en) | 2019-12-19 |
JP7405776B2 (ja) | 2023-12-26 |
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US20230245863A1 (en) | 2023-08-03 |
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