TWI256525B - Photo resist material and method for pattern formation - Google Patents

Photo resist material and method for pattern formation

Info

Publication number
TWI256525B
TWI256525B TW092118229A TW92118229A TWI256525B TW I256525 B TWI256525 B TW I256525B TW 092118229 A TW092118229 A TW 092118229A TW 92118229 A TW92118229 A TW 92118229A TW I256525 B TWI256525 B TW I256525B
Authority
TW
Taiwan
Prior art keywords
resist material
photo resist
group
alkyl group
pattern formation
Prior art date
Application number
TW092118229A
Other languages
English (en)
Other versions
TW200407671A (en
Inventor
Takanobu Takeda
Osamu Watanabe
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200407671A publication Critical patent/TW200407671A/zh
Application granted granted Critical
Publication of TWI256525B publication Critical patent/TWI256525B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/118—Initiator containing with inhibitor or stabilizer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092118229A 2002-07-04 2003-07-03 Photo resist material and method for pattern formation TWI256525B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002195740A JP3844069B2 (ja) 2002-07-04 2002-07-04 レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200407671A TW200407671A (en) 2004-05-16
TWI256525B true TWI256525B (en) 2006-06-11

Family

ID=29720294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118229A TWI256525B (en) 2002-07-04 2003-07-03 Photo resist material and method for pattern formation

Country Status (5)

Country Link
US (1) US6869748B2 (zh)
EP (1) EP1378795B1 (zh)
JP (1) JP3844069B2 (zh)
KR (1) KR100620486B1 (zh)
TW (1) TWI256525B (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3821217B2 (ja) * 2001-10-30 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7833690B2 (en) * 2001-11-05 2010-11-16 The University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
CN1791837A (zh) * 2004-05-27 2006-06-21 株式会社新克 正型感光性组合物
KR100900610B1 (ko) * 2004-07-22 2009-06-02 간사이 페인트 가부시키가이샤 근적외선 활성형 포지티브형 레지스트 조성물 및 그 패턴의 형성방법
TW200622494A (en) * 2004-09-30 2006-07-01 Kyowa Hakko Chemical Co Ltd Photoresist composition for positive liquid crystal device
US20080213699A1 (en) * 2004-12-17 2008-09-04 Samsung Electronics Co., Ltd. Photoresist composition and method of forming a photoresist pattern using the photoresist composition
KR20060068798A (ko) * 2004-12-17 2006-06-21 삼성전자주식회사 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법
JP4668042B2 (ja) * 2005-02-10 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR100902535B1 (ko) * 2005-02-10 2009-06-15 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4754265B2 (ja) * 2005-05-17 2011-08-24 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2007133208A (ja) * 2005-11-11 2007-05-31 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP2007163767A (ja) * 2005-12-13 2007-06-28 Kansai Paint Co Ltd 回路基板用ポジ型レジスト組成物、回路基板用ポジ型ドライフィルム、及び、それを用いた回路基板の製造方法
JP2007163772A (ja) * 2005-12-13 2007-06-28 Kansai Paint Co Ltd 回路基板用ポジ型レジスト組成物、回路基板用ポジ型ドライフィルム、及び、それを用いた回路基板の製造方法
WO2007069585A1 (ja) * 2005-12-13 2007-06-21 Kansai Paint Co., Ltd. 回路基板用ポジ型レジスト組成物、回路基板用ポジ型ドライフィルム、及び、それを用いた回路基板の製造方法
JP4777175B2 (ja) * 2006-07-26 2011-09-21 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4777174B2 (ja) * 2006-07-26 2011-09-21 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
JP5158370B2 (ja) 2008-02-14 2013-03-06 信越化学工業株式会社 ダブルパターン形成方法
US8685616B2 (en) * 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP5703819B2 (ja) * 2010-05-14 2015-04-22 Jsr株式会社 液晶表示素子、ポジ型感放射線性組成物、液晶表示素子用層間絶縁膜及びその形成方法
JP5621755B2 (ja) * 2011-11-17 2014-11-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5873826B2 (ja) * 2012-07-27 2016-03-01 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP5850873B2 (ja) * 2012-07-27 2016-02-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5894953B2 (ja) * 2012-07-27 2016-03-30 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP6830398B2 (ja) * 2017-04-06 2021-02-17 富士フイルム株式会社 感光性転写材料用重合体溶液の製造方法、感光性転写材料用組成物の製造方法、感光性転写材料の製造方法、回路配線の製造方法、タッチパネルの製造方法、感光性転写材料用重合体溶液の製造に用いられる組成物、感光性転写材料用重合体溶液、感光性転写材料用組成物及び感光性転写材料
TW202119130A (zh) * 2019-08-09 2021-05-16 日商丸善石油化學股份有限公司 聚合物及其製造方法，及阻劑用樹脂組成物
US11262654B2 (en) * 2019-12-27 2022-03-01 Intel Corporation Chain scission resist compositions for EUV lithography applications
CN112799280A (zh) * 2020-12-31 2021-05-14 北京科华微电子材料有限公司 硝基苯甲醇磺酸酯化合物作为增速剂在光刻胶中的应用、用于制备光刻胶的组合物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118641A (ja) 1982-01-08 1983-07-14 Toshiba Corp 微細パタ−ン形成用放射線ポジ型レジスト
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
DE3750275T3 (de) 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JPH03223858A (ja) 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd パターン形成方法
JPH03275149A (ja) 1990-03-27 1991-12-05 Tosoh Corp 不飽和ジエステル製造用触媒の再生方法
TW304235B (zh) 1992-04-29 1997-05-01 Ocg Microelectronic Materials
JP3287057B2 (ja) 1993-03-30 2002-05-27 日本ゼオン株式会社 レジスト組成物
JP2845225B2 (ja) * 1995-12-11 1999-01-13 日本電気株式会社 高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
WO2003006407A1 (fr) 2001-07-13 2003-01-23 Kyowa Yuka Co., Ltd. Procédé de production de composé d'éther

Also Published As

Publication number Publication date
KR20040026110A (ko) 2004-03-27
US20040023153A1 (en) 2004-02-05
TW200407671A (en) 2004-05-16
US6869748B2 (en) 2005-03-22
EP1378795B1 (en) 2012-08-29
JP2004045448A (ja) 2004-02-12
KR100620486B1 (ko) 2006-09-13
JP3844069B2 (ja) 2006-11-08
EP1378795A1 (en) 2004-01-07

Similar Documents

Publication Publication Date Title
TWI256525B (en) Photo resist material and method for pattern formation
ES2121441T3 (es) Nuevos derivados de 3,5 -dioxo - (2h,4h) - 1,2,4 - triazina,su preparacion y aplicacion como farmaco
TW200611916A (en) High molecular compound, positive type resist composition and process for forming resist pattern
TW200600529A (en) Polymer compound, photoresist composition including polymer compound, and method for forming resist pattern
HUP0401296A2 (hu) Új eljárás pirimidinonszármazékok előállítására
AU2001265997A1 (en) Chemical products suited for use as co-catalysts, method for the preparation thereof and their use in catalyst systems for producing polyolefins
DK13186D0 (da) Aminophenolderivater
TW200705121A (en) Developing liquid composition, manufacturing method thereof and method for resist pattern
ATE296300T1 (de) Benzoheterocyclische distamycinderivate, verfahren zu ihrer herstellung und ihre verwendung als antitumormittel
JP2002090988A5 (zh)
HUP0302467A2 (hu) Eljárás szulfonamidcsoporttal szubsztituált imidazotriazinon-származékok előállítására
TW200510928A (en) Sulfonamide compound, polymer compound, resist material and pattern formation method
JP2004271629A5 (zh)
HUP0400772A2 (hu) Eljárás piperazinszármazékok mezilátjainak előállítására és ezen vegyületek
CA2558191A1 (en) Composition containing benzamidine derivative and method for stabilizing benzamidine derivative
HUP0001551A2 (hu) Javított eljárás tiazolidin-dionok előállítására, tiazolidin-dionok és az ezeket tartalmazó gyógyszerkészítmények
ES455741A1 (es) Un procedimiento para la preparacion de nuevos derivados de 1,3-bencenodimetanol.
YU43902A (sh) Novi razgranati supstituisani amino derivati od 3-amino-1- -fenil-1h(1,2,4) triazola, postupak za njihovo dobijanje i farmaceutski preparati koji ih sadrže
HUP0402544A2 (hu) Kompozíció elektrolit oldathoz és eljárás az előállítására
NO20023041L (no) Fremgangsmåte for fremstilling av pyrazolopyridazinderivater
EP0240978A3 (en) Ether compounds, process for their preparation, compositions containing the same and use thereof
GB9812211D0 (en) Cinnamoyl distamycin analogous derivatives,process for their preparation,and their use as antitumor agents
JP2002006495A5 (zh)
AU6214999A (en) Method for manufacture of electronic parts
DE60026161D1 (de) Amidin-derivate, ihre herstellung und verwendung als medikamenten

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent