TWI256086B - Method of fabricating annealed wafer - Google Patents

Method of fabricating annealed wafer

Info

Publication number
TWI256086B
TWI256086B TW092100194A TW92100194A TWI256086B TW I256086 B TWI256086 B TW I256086B TW 092100194 A TW092100194 A TW 092100194A TW 92100194 A TW92100194 A TW 92100194A TW I256086 B TWI256086 B TW I256086B
Authority
TW
Taiwan
Prior art keywords
temperature
gas
ambience
fabricating
annealing
Prior art date
Application number
TW092100194A
Other languages
English (en)
Other versions
TW200402806A (en
Inventor
Young-Hee Mun
Gun Kim
Sung-Ho Yoon
Original Assignee
Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltron Inc filed Critical Siltron Inc
Publication of TW200402806A publication Critical patent/TW200402806A/zh
Application granted granted Critical
Publication of TWI256086B publication Critical patent/TWI256086B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW092100194A 2002-08-06 2003-01-06 Method of fabricating annealed wafer TWI256086B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0046299A KR100432496B1 (ko) 2002-08-06 2002-08-06 어닐 웨이퍼의 제조 방법

Publications (2)

Publication Number Publication Date
TW200402806A TW200402806A (en) 2004-02-16
TWI256086B true TWI256086B (en) 2006-06-01

Family

ID=31492802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092100194A TWI256086B (en) 2002-08-06 2003-01-06 Method of fabricating annealed wafer

Country Status (4)

Country Link
US (1) US6818569B2 (zh)
JP (1) JP2004072066A (zh)
KR (1) KR100432496B1 (zh)
TW (1) TWI256086B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095717A (ja) * 2002-08-30 2004-03-25 Sumitomo Mitsubishi Silicon Corp アニールウェーハのボロン汚染消滅方法
JP4609029B2 (ja) * 2004-10-13 2011-01-12 信越半導体株式会社 アニールウェーハの製造方法
JP5188673B2 (ja) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
US8153538B1 (en) * 2010-12-09 2012-04-10 Memc Electronic Materials, Inc. Process for annealing semiconductor wafers with flat dopant depth profiles
JP7014694B2 (ja) * 2018-10-15 2022-02-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10203816A (ja) * 1997-01-22 1998-08-04 Kawasaki Steel Corp 金属シリコンからのボロン除去方法
TW429478B (en) * 1997-08-29 2001-04-11 Toshiba Corp Semiconductor device and method for manufacturing the same
JP3407629B2 (ja) * 1997-12-17 2003-05-19 信越半導体株式会社 シリコン単結晶ウエーハの熱処理方法ならびにシリコン単結晶ウエーハ
US6413310B1 (en) * 1998-08-31 2002-07-02 Shin-Etsu Handotai Co., Ltd. Method for producing silicon single crystal wafer and silicon single crystal wafer
KR100291520B1 (ko) * 1999-04-12 2001-05-15 박종섭 에스오아이 반도체 기판의 제조방법
CN1363118A (zh) 2000-03-29 2002-08-07 信越半导体株式会社 退火圆片的制造方法
JP3893608B2 (ja) * 2000-09-21 2007-03-14 信越半導体株式会社 アニールウェーハの製造方法
JP2002110949A (ja) * 2000-09-28 2002-04-12 Canon Inc Ｓｏｉの熱処理方法及び製造方法
JP4822582B2 (ja) * 2000-12-22 2011-11-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ボロンドープされたシリコンウエハの熱処理方法

Also Published As

Publication number Publication date
KR20040013396A (ko) 2004-02-14
TW200402806A (en) 2004-02-16
KR100432496B1 (ko) 2004-05-20
US20040029403A1 (en) 2004-02-12
US6818569B2 (en) 2004-11-16
JP2004072066A (ja) 2004-03-04

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees