TWI247957B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- TWI247957B TWI247957B TW090128616A TW90128616A TWI247957B TW I247957 B TWI247957 B TW I247957B TW 090128616 A TW090128616 A TW 090128616A TW 90128616 A TW90128616 A TW 90128616A TW I247957 B TWI247957 B TW I247957B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- pixel electrode
- crystal display
- layer
- display device
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims description 48
- 239000010409 thin film Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 69
- 239000004065 semiconductor Substances 0.000 description 20
- 239000011651 chromium Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018904 PSV1 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003463 sulfur Chemical class 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPIQBHUAUPBFLO-UHFFFAOYSA-N indium;oxobismuth Chemical compound [In].[Bi]=O RPIQBHUAUPBFLO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000372786A JP3904828B2 (ja) | 2000-12-07 | 2000-12-07 | 液晶表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI247957B true TWI247957B (en) | 2006-01-21 |
Family
ID=18842269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090128616A TWI247957B (en) | 2000-12-07 | 2001-11-19 | Liquid crystal display device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6891586B2 (enExample) |
| JP (1) | JP3904828B2 (enExample) |
| KR (1) | KR100465861B1 (enExample) |
| CN (2) | CN100335946C (enExample) |
| TW (1) | TWI247957B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3904828B2 (ja) * | 2000-12-07 | 2007-04-11 | 株式会社日立製作所 | 液晶表示装置 |
| KR100531928B1 (ko) * | 2002-04-19 | 2005-11-28 | 가부시끼가이샤 도시바 | 액정디스플레이 |
| KR100934710B1 (ko) * | 2002-12-30 | 2009-12-29 | 엘지디스플레이 주식회사 | 반사형 액정표시장치용 어레이기판 및 그 제조방법 |
| JP4299717B2 (ja) * | 2004-04-14 | 2009-07-22 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜トランジスタとその製造方法 |
| JP4499481B2 (ja) * | 2004-06-03 | 2010-07-07 | 富士通株式会社 | 液晶表示装置及びその製造方法 |
| US7342253B2 (en) * | 2004-11-19 | 2008-03-11 | Tpo Display Corp. | Display panels with anti-Newton ring structures |
| WO2007129519A1 (ja) * | 2006-05-01 | 2007-11-15 | Sharp Kabushiki Kaisha | 液晶表示装置および液晶表示装置の製造方法 |
| CN101484839B (zh) * | 2006-06-30 | 2012-07-04 | 夏普株式会社 | 液晶显示装置和液晶显示装置的制造方法 |
| US8243236B2 (en) * | 2006-10-18 | 2012-08-14 | Sharp Kabushiki Kaisha | Liquid crystal display and method for manufacturing liquid crystal display |
| US8421967B2 (en) * | 2006-12-14 | 2013-04-16 | Sharp Kabushiki Kaisha | Liquid crystal display device and process for producing liquid crystal display device |
| WO2008090682A1 (ja) * | 2007-01-24 | 2008-07-31 | Sharp Kabushiki Kaisha | 液晶表示装置 |
| WO2008093467A1 (ja) * | 2007-01-31 | 2008-08-07 | Sharp Kabushiki Kaisha | 液晶表示装置 |
| WO2008129748A1 (ja) * | 2007-04-13 | 2008-10-30 | Sharp Kabushiki Kaisha | 液晶表示装置、及び液晶表示装置の製造方法 |
| WO2009001508A1 (ja) * | 2007-06-26 | 2008-12-31 | Sharp Kabushiki Kaisha | 液晶表示装置、及び液晶表示装置の製造方法 |
| TWI361327B (en) * | 2007-12-05 | 2012-04-01 | Au Optronics Corp | Color filter with different alignment structures and display panel using the same |
| EP2077466A1 (en) * | 2008-01-07 | 2009-07-08 | TPO Displays Corp. | Electrode structure for an LCD device |
| TWI453835B (zh) | 2012-01-11 | 2014-09-21 | Chunghwa Picture Tubes Ltd | 畫素結構及其製作方法 |
| CN104701326A (zh) * | 2015-03-19 | 2015-06-10 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
| CN113574448A (zh) * | 2020-02-26 | 2021-10-29 | 京东方科技集团股份有限公司 | 液晶显示面板及液晶显示装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2756206B2 (ja) | 1992-02-19 | 1998-05-25 | シャープ株式会社 | 反射型液晶表示装置及びその製造方法 |
| US5418635A (en) | 1992-02-19 | 1995-05-23 | Sharp Kabushiki Kaisha | Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and random configuration |
| JP3066192B2 (ja) | 1992-07-10 | 2000-07-17 | シャープ株式会社 | 反射型アクティブマトリクス基板の製造方法 |
| JP2740401B2 (ja) | 1992-04-02 | 1998-04-15 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
| JP2948736B2 (ja) | 1994-09-28 | 1999-09-13 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
| JPH1010525A (ja) | 1996-06-19 | 1998-01-16 | Sharp Corp | 反射型基板およびその製造方法並びに反射型液晶表示装置 |
| KR100460060B1 (ko) * | 1996-06-29 | 2005-05-19 | 비오이 하이디스 테크놀로지 주식회사 | 반사형기판,그의제조방법및이를적용한반사형액정표시장치 |
| US6195140B1 (en) | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
| US6330047B1 (en) | 1997-07-28 | 2001-12-11 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for fabricating the same |
| JP3284187B2 (ja) | 1998-01-29 | 2002-05-20 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
| JP3019831B2 (ja) * | 1998-03-11 | 2000-03-13 | 日本電気株式会社 | 反射型液晶表示装置及びその製造方法 |
| JPH11337961A (ja) | 1998-05-26 | 1999-12-10 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
| JP3478528B2 (ja) | 1998-07-23 | 2003-12-15 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
| JP4238399B2 (ja) | 1998-12-18 | 2009-03-18 | ソニー株式会社 | 拡散反射板及びその製造方法と反射型表示装置 |
| CN1174359C (zh) * | 1999-03-04 | 2004-11-03 | 三星电子株式会社 | 反射型液晶显示器及其制造方法 |
| KR100582600B1 (ko) | 1999-03-12 | 2006-05-23 | 엘지.필립스 엘시디 주식회사 | 반사형 액정표시소자 |
| TWI300150B (en) * | 2000-02-16 | 2008-08-21 | Toshiba Matsushita Display Tec | Reflective-type display element, reflector and method of producing the same |
| US6747289B2 (en) * | 2000-04-27 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
| US6362065B1 (en) * | 2001-02-26 | 2002-03-26 | Texas Instruments Incorporated | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer |
| JP3904828B2 (ja) * | 2000-12-07 | 2007-04-11 | 株式会社日立製作所 | 液晶表示装置 |
-
2000
- 2000-12-07 JP JP2000372786A patent/JP3904828B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-19 TW TW090128616A patent/TWI247957B/zh not_active IP Right Cessation
- 2001-12-05 US US10/002,134 patent/US6891586B2/en not_active Expired - Lifetime
- 2001-12-06 KR KR10-2001-0076816A patent/KR100465861B1/ko not_active Expired - Fee Related
- 2001-12-07 CN CNB2004100120546A patent/CN100335946C/zh not_active Expired - Fee Related
- 2001-12-07 CN CNB01143113XA patent/CN1196964C/zh not_active Expired - Fee Related
-
2004
- 2004-06-16 US US10/867,716 patent/US7102712B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6891586B2 (en) | 2005-05-10 |
| US20020071083A1 (en) | 2002-06-13 |
| CN1595240A (zh) | 2005-03-16 |
| US20040223107A1 (en) | 2004-11-11 |
| CN1196964C (zh) | 2005-04-13 |
| CN100335946C (zh) | 2007-09-05 |
| US7102712B2 (en) | 2006-09-05 |
| KR20020045551A (ko) | 2002-06-19 |
| JP2002174821A (ja) | 2002-06-21 |
| CN1357782A (zh) | 2002-07-10 |
| JP3904828B2 (ja) | 2007-04-11 |
| KR100465861B1 (ko) | 2005-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |