TWI245356B - Method for inspecting semiconductor device - Google Patents

Method for inspecting semiconductor device Download PDF

Info

Publication number
TWI245356B
TWI245356B TW093118671A TW93118671A TWI245356B TW I245356 B TWI245356 B TW I245356B TW 093118671 A TW093118671 A TW 093118671A TW 93118671 A TW93118671 A TW 93118671A TW I245356 B TWI245356 B TW I245356B
Authority
TW
Taiwan
Prior art keywords
wafer
current
semiconductor device
crystal
detection
Prior art date
Application number
TW093118671A
Other languages
English (en)
Chinese (zh)
Other versions
TW200504910A (en
Inventor
Shigemitsu Shiba
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200504910A publication Critical patent/TW200504910A/zh
Application granted granted Critical
Publication of TWI245356B publication Critical patent/TWI245356B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Lasers (AREA)
TW093118671A 2003-07-15 2004-06-25 Method for inspecting semiconductor device TWI245356B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003274511A JP4136832B2 (ja) 2003-07-15 2003-07-15 半導体レーザーダイオードチップの検査方法および検査装置

Publications (2)

Publication Number Publication Date
TW200504910A TW200504910A (en) 2005-02-01
TWI245356B true TWI245356B (en) 2005-12-11

Family

ID=33475552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118671A TWI245356B (en) 2003-07-15 2004-06-25 Method for inspecting semiconductor device

Country Status (6)

Country Link
US (2) US7015051B2 (https=)
EP (1) EP1498727B1 (https=)
JP (1) JP4136832B2 (https=)
KR (1) KR100633460B1 (https=)
DE (1) DE602004020550D1 (https=)
TW (1) TWI245356B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6898138B2 (en) * 2002-08-29 2005-05-24 Micron Technology, Inc. Method of reducing variable retention characteristics in DRAM cells
JP4334927B2 (ja) * 2003-06-27 2009-09-30 キヤノン株式会社 半導体レーザーダイオードチップの検査方法および検査装置
KR100688551B1 (ko) 2005-06-07 2007-03-02 삼성전자주식회사 인터록기능을 구비한 반도체 웨이퍼 마킹장치 및 이를이용한 반도체 웨이퍼 마킹방법
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
JP2007081197A (ja) * 2005-09-15 2007-03-29 Sony Corp 半導体レーザおよびその製造方法
JP4694970B2 (ja) * 2006-01-16 2011-06-08 三洋電機株式会社 半導体素子解析方法
FR2902926B1 (fr) * 2006-06-22 2008-10-24 Commissariat Energie Atomique Procede et dispositif de suivi d'un traitement thermique d'un substrat microtechnologique.
KR100827819B1 (ko) * 2007-02-21 2008-05-07 전북대학교산학협력단 반도체 나노물질의 캐리어 타입 측정 시스템 및 반도체나노물질의 캐리어 타입의 측정 방법
JP4374552B2 (ja) * 2007-04-12 2009-12-02 ソニー株式会社 基板の製造方法および基板製造システム、並びに表示装置の製造方法
US7919973B2 (en) * 2007-06-22 2011-04-05 Microchip Technology Incorporated Method and apparatus for monitoring via's in a semiconductor fab
JP2009008626A (ja) 2007-06-29 2009-01-15 Nec Electronics Corp 故障解析方法及び故障解析装置
JP6137536B2 (ja) * 2013-04-26 2017-05-31 日本電産リード株式会社 基板検査装置、及び基板検査方法
DE102016008509A1 (de) * 2016-07-13 2018-01-18 Siltectra Gmbh Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten
CN110031188B (zh) * 2019-03-29 2021-08-27 上海华岭集成电路技术股份有限公司 集成电路光学芯片光圈测试方法
JP7092089B2 (ja) * 2019-04-10 2022-06-28 株式会社Sumco 半導体製品の導電型判別装置および導電型判別方法
JP2022191643A (ja) * 2021-06-16 2022-12-28 住友電気工業株式会社 面発光レーザの製造方法、面発光レーザの検査方法及び面発光レーザの検査装置
CN118518676A (zh) * 2024-07-09 2024-08-20 深圳市鹏乐智能系统有限公司 基于人工智能的led芯片缺陷检测方法及系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422498A (en) * 1993-04-13 1995-06-06 Nec Corporation Apparatus for diagnosing interconnections of semiconductor integrated circuits
US5708371A (en) * 1995-03-16 1998-01-13 Mitsubishi Denki Kabushiki Kaisha Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen
US5952837A (en) * 1995-07-18 1999-09-14 Mitsubishi Denki Kabushiki Kaisha Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen
DE19725679A1 (de) 1997-06-18 1999-01-28 Innomess Elektronik Gmbh Verfahren und Vorrichtung zur Bestimmung der elektrischen Inhomogenität von Halbleitern
EP0990918B1 (en) * 1998-09-28 2009-01-21 NEC Electronics Corporation Device and method for nondestructive inspection on semiconductor device
JP4334927B2 (ja) 2003-06-27 2009-09-30 キヤノン株式会社 半導体レーザーダイオードチップの検査方法および検査装置

Also Published As

Publication number Publication date
US20060079058A1 (en) 2006-04-13
US20050012923A1 (en) 2005-01-20
JP4136832B2 (ja) 2008-08-20
EP1498727B1 (en) 2009-04-15
DE602004020550D1 (de) 2009-05-28
EP1498727A1 (en) 2005-01-19
US7015051B2 (en) 2006-03-21
JP2005039054A (ja) 2005-02-10
US7332362B2 (en) 2008-02-19
TW200504910A (en) 2005-02-01
KR100633460B1 (ko) 2006-10-16
KR20050008530A (ko) 2005-01-21

Similar Documents

Publication Publication Date Title
TWI245356B (en) Method for inspecting semiconductor device
US7385686B2 (en) Method and apparatus for inspecting semiconductor device
CN101354366B (zh) 故障解析方法及故障解析装置
US6549022B1 (en) Apparatus and method for analyzing functional failures in integrated circuits
JP3917154B2 (ja) 半導体試料の欠陥評価方法及び装置
JP2014520272A (ja) 光ルミネセンス画像化を使用する発光半導体デバイスの検査の方法および装置
JPH0634027B2 (ja) 集積回路又はプリント回路のような電気的装置の検査方法
US9222970B2 (en) Fault position analysis method and fault position analysis device for semiconductor device
JPH0750331A (ja) 半導体発光素子の評価装置及び評価方法
JP2004526964A (ja) 半導体のマイクロ欠陥の検出と分類
JP2013104667A (ja) 半導体装置の検査装置及び検査方法
CN102460126B (zh) 使用非均匀光激发的材料或器件特征
JP4001373B2 (ja) 集積回路断線検査方法と装置
JP2010197051A (ja) 故障解析装置
TW200427978A (en) Detection method and apparatus
JPH0697508A (ja) 発光素子製造用ウエーハの検査方法
JP2006073572A (ja) 半導体結晶欠陥検査方法、半導体結晶欠陥検査装置、及びその半導体結晶欠陥検査装置を用いた半導体装置の製造方法
WO2019017121A1 (ja) 半導体ウェハ
JP7376369B2 (ja) 半導体素子の検査装置
KR100553812B1 (ko) 전/후면 겸용 불량 위치 검출 장치 및 방법
KR102170357B1 (ko) 비파괴 결함 검출방법
Hu et al. Failure Analysis on Superluminescent Diode
TW200427977A (en) Detection method and apparatus
JP2001160573A (ja) 欠陥位置検出方法及び検出装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees