TWI241882B - A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same - Google Patents

A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same Download PDF

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Publication number
TWI241882B
TWI241882B TW93124256A TW93124256A TWI241882B TW I241882 B TWI241882 B TW I241882B TW 93124256 A TW93124256 A TW 93124256A TW 93124256 A TW93124256 A TW 93124256A TW I241882 B TWI241882 B TW I241882B
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Taiwan
Prior art keywords
electric heating
substrate
die
elements
heating elements
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TW93124256A
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English (en)
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TW200514494A (en
Inventor
Shriram Ramanathan
Sarah E Kim
Scott R List
Gregory M Chrysler
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Intel Corp
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Publication of TW200514494A publication Critical patent/TW200514494A/zh
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Publication of TWI241882B publication Critical patent/TWI241882B/zh

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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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1241882 九、發明說明： 【發明所屬之技術領域】 本毛月大體上關於具有微電子晶粒之熱電子組件，及更 特別關於用以冷卻該類組件之微電子晶粒的系統。 【先前技術】 當半導«置如處理器及處理元件以持續升高的資料速 率及較高頻率操作時’通常會消耗較大的電流及產生較多 I、、、口人為了其他理由，尤其是為了可靠性理由，期望 在某溫度範圍内維持這些裝置的操作。習用的熱轉移機制 限制這類裝置的操作於較低功率位準，較低f料速率，及/ 或較低操作頻率。由於大小及位置侷限，及熱侷限，習用 熱轉移機制的熱傳能力是有限的。 【發明内容】 本發明提供一微電子組件，其具有形成在一晶粒上的電 熱凡件以便當電流流經電熱元件時將熱由晶粒散去。在一 貝轭例中，電熱元件會併入一晶粒主動側的多個傳導互連 凡件之間。在另-實施例中，電熱元件位於晶粒背側上及 電連接至晶粒前側上的載體基板。在更一實施例中，電熱 元件會形成在一次級基板上及轉移至晶粒。 【實施方式】 本發明提供一微電子組件，其具有形成在一晶粒上的電 熱兀件以便當電流流經電熱元件時將熱由晶粒散去。在一 貝施例中，電熱元件會併入一晶粒主動側的多個傳導互連 兀件之間。在另一實施例中，電熱元件位於晶粒背側上及 95384.doc 1241882 電連接至晶粒前側上的載體基板。在更一實施例中，電熱 元件會形成在一次級基板上及轉移至晶粒。 —後附圖示的圖i繪示部份晶圓10，其部份處理以製造根據 實施例的微電子組件。晶圓1G包括—晶圓基板12，一積體 電路14及一介電材料16。 晶圓基板10典型上以矽或另一半導體材料製成。積體電 路14包括積體電路元件18，其形成在晶圓基板12内及上。 積體電路元件18包括電晶體’電容’二極體等。積體電路 14尚包括複數個交替的介電層與金屬層。金屬層包括一電 力板20及一地線板22。積體電路14尚包括接觸墊24，其包 括一電力接觸墊24P，一地線接觸墊24G，及一信號接觸墊 24卜 再者，積體電路介電層中的塞，通道，及金屬線會形 成電連結’此處僅顯示數個電連結2 6。 電連結26包括一電力電連結26ρι，其將電力接觸墊24p 與電力板20互連，及一電力電連結26p2，其將電力板2〇與 積體電路元件18互連。依此，電源可經由電力接觸墊24p， 電力電連結26P1，電力板20，及電力電連結261>2而提供到 至少一積體電路元件18。 電連結26包括一地線電連結26G1，其將地線接觸墊24g 與地線板22互連，及一地線電連結26G2，其將地線板22與 積體電路元件18互連。依此，地線可經由地線接觸墊， 地線電連結26G1，地線板22，及地線電連結26G2而提供到 至少一積體電路元件18。 95384.doc 1241882 一信號電連結261會將一信號接觸墊241與至少一積體電 路元件18互連，及由電力板2〇及地線地22兩者斷開。信號 會經由較多的信號電連結（如，信號電連結261)而提供至積 體電路元件18及由積體電路元件18提供。 介電材料16會在積體電路14上方形成為一層。介電材料 16剛開始會覆蓋接觸墊24。接著，會在介電材料16中蝕刻 一第一開口 28，而曝露電力接觸墊24P的一區域。 如圖2所示’電熱元件3〇會隨後形成在圖1的開口 28中。 電熱元件30的多個層會無電鍍或濺鍍，及包括一擴散障壁 層32，一 p摻雜的半導體材料34(如，p摻雜的碲化鉍，碲化 鉍與碲化銻的合金，或矽與鍺的合金），及一擴散障壁層 3 6 ’其循序形成在另一者的頂部上。 如圖3所示，另一電熱元件4〇會形成為與電力接觸墊24p 上的電熱元件30相鄰。電熱元件40會形成在一開口中，該 開口在電熱元件3 〇形成後形成在介電材料16中。為了形成 電熱元件40的開口，會在介電材料丨6上方形成一光阻層， 及在預形成電熱元件40上方的光阻層罩幕一開口。將光阻 層用作一罩幕，會接著在介電材料16中蝕刻一開口，其預 形成熱電元件40之處。電熱元件40包括一擴散障壁層42， 一 η摻雜半導體材料44(如，^摻雜的碲化銻，碲化鉍與碲化 銻的合金，或矽與鍺的合金），及一擴散障壁層46，以上循 序形成在另一者的頂部上。因此，除了半導體材料34是ρ 掺雜，而半導體材料44為η摻雜以外，電熱元件4〇會與電熱 元件30相同。 95384.doc 1241882 傳導間隔零件48β 墊mg及241上。开^值返後分別形成在地線及信號接觸 刻，其藉由在介3=隔零件48及50之處的開口會1虫 光4 6±及電熱元件30及4〇上方形成-罩幕^且層，及接著使用料幕之光阻層中的開 口以蝕刻該等開口，甘士人 间 、中會在介電材料16中形成傳導間隔 零件48及50。傳慕pq β5令 導間隔零件48及50典型上以金屬製成。 、隨後會形成多個傳導互連元件54,各者位於電熱元件3〇 或4〇中各者之上，或傳導間隔零件48或50之上。傳導互連 件54之同度會鬲於介電材料“以便具有較高表面％，盆 位在介電材料16較高平面上方的共同平面中。 ’、 圖至3中僅緣示部份的晶圓j 〇。然而吾人應了解，晶圓 包括稷數個積體電路14，其形成為橫貫晶圓而以p及广方向 L伸的列及行，電熱^件3()及4G，傳導間隔零件48及Μ， 及傳導互連元件54各者具有相同的設計。 晶圓10會隨而切割成菱形或切單為個別晶粒，各晶粒支 撐一個別的積體電路及相關的連接。各晶粒包括出現在圖3 所示的部份晶圓1 〇中的零件。 圖4繪示一個此類的晶粒1〇Α，其以一封裝基板6〇的形式 倒扣及設置在一載體基板上。封裝終端62會形成在封裝基 板60的上表面上。傳導互連元件54各者會與個別封裝終端 62接觸。 包括晶粒10Α及封裝基板60的整個微電子組件64會接著 插入加熱爐中以令傳導互連元件54流回。傳導互連元件54 會軟化及熔化，及隨後圖再冷卻及再次固化。各傳導互連 95384.doc -10- Ϊ241882 元件54會接著附著到一個別封裝端62上，藉以將晶粒1 架設到封裝基板60上及將晶粒1 〇A與封裝基板6〇電互連。 使用中時，電源可經由封裝基板6〇再經由一封裝端“A 而提供至電熱元件30。電流經由？摻雜半導體材料34而流向 晶粒。熟習電熱技藝者應了解，流經p摻雜之半導體材料的 電流會造成熱以與電流流動相反的方向散去。因此，熱會 朝向封裝基板60而經由電熱元件30以遠離積體電路14的方 向散去。電流電熱元件30的電流會分支。一部份電流會提 供電力至某些積體電路元件丨8，而某些電流則會流經電力 接觸墊24P及接著經由電熱元件4〇而到達封裝端62b。流經^ 摻雜之半導體材料44的電流會造成熱以電流流動方向散 去。流經η摻雜之半導體材料44的電流由積體電路14流走， 因而將熱由積體電路14散去。 在另一實施例中，提供電力至電熱元件的電力接觸墊會 由提供電源至電路的電力接觸墊分離。這會允許電熱單位 間的分離控制。這樣的結構有助於必須維持提供至電路的 電壓及使電壓不受提供至電熱模組的電源影響。 因此可見，Ρ摻雜半導體材料34及η摻雜半導體材料料兩 者皆會將熱由積體電路14散去。因此可對積體電路14提供 局邛丨生Q卻更夕的結構，如包括電熱元件3 〇及的結構， 可在橫越積體電路14的期望位置處形成，這須要額外的冷 卻。應該注意的是，提供電流至電熱元件3〇及4〇的封裝端 62之相同陣列亦會提供電源，地線，及信號至積體電路μ。 應該更注意的是，會在所需之處才提供冷卻。當積體電路 95384.doc 1241882 之χ-y方向中的某區域需要電源時，會經由電熱元件而在相 同：域中提供電源。特定區域中對電源須求的增加會與在 特定區域中產生之熱的增加對應。特定區域中電源的增加 :會削找區域中流經電熱元件的電流增加對應。因此， “寺疋區域中產生的熱增加時，流經特定區域中電熱元件 的電流會增加。 圖5緣示另一微電子組件7〇,其包括一封褒基板μ形式的 載體基板，-架設在封裝基板72上的晶粒74，晶粒Μ上的 電熱元件76,-集成散熱器78，及—熱沉⑽。晶粒74會經 由傳導互連元件82而架設及電連接至封裝基板72。 電熱元件76會以與圖3之電熱元件3〇及4〇相同的方式形 成。某些電熱元件76具有p摻雜的半導體材料，及某些具有 η摻雜的半導體材料。當電流流經電熱元件76時，電熱元件 76設置為熱可由晶粒76的上部表面朝向集成散熱器㈣ 去0 集成散熱器78會與電熱元件76直接接觸，及熱沉肋會設 置在集成散熱器76上。如-般所了解地，熱沉8()包括一基 底及複數個由基底延伸的散熱片，熱可由散熱片對流至周 遭空氣。 ° 設置焊壓線84,電流可經由該焊壓線84而提供至電熱元 件76或由電熱元件76流走。各焊壓線科之一端會連接至晶 粒74上表面上的墊，其連接至電熱元件乃的第一者。個別 焊壓線84的對面端會結合至封裝基板72上的封裝端。電流 由封裝端流經個別焊壓線84及個別個別經由第一電熱元件 95384.doc 1241882 75而接觸。該電流則可流經偶數個電熱元件76及經由另一 焊壓線84流回封裝基板72。 圖6繪示根據本發明另一實施例的微電子組件86。微電子 組件86與圖5的微電子組件7〇相同，及相同的參考號碼代表 相同的零件。主要的差異為，微電子組件86包括一晶粒Μ， 其遠較圖5的晶粒74更薄。短塞9〇會經由晶粒88而形成。某 些電熱元件76會與個別塞9〇及個別傳導互連元件82對齊。 電流會經由個別的傳導互連元件82及個別的塞9〇而提供至 個別的電熱元件76。接著，電流可流經偶數個電熱元件％ 及經由另一個塞9〇及另一個彼此對齊的傳導互連元件以流 回0 圖7至8繪示微電子組件的製造，其中熱電元件會在一分 離基板上製造及接著轉移至水平面的積體電路。組合晶圓 會接著初單為個別的單位。 特別參照圖7，設置一晶圓94，其具有一晶圓基板％，形 成在晶圓基板96上的積體電路98，及形成在積體電路別上 的接觸墊100。圖7亦繪示一轉移基板1〇2，其以與圖3之電 熱元件30及40類似的方式具有形成在該轉移基板上的電熱 元件1〇4。圖7亦以間_6的形式繪示互連結構。電熱元件 1〇4及間隔物106具有形成於其上的傳導互連元件1〇8。 士圖7所tf ’各傳導互連元件1〇8會與個別接觸塾⑽接 觸。傳導互連元件108會接著藉由-熱回流程序而附著至接 觸墊100。亦會設置一組合曰 、且。日日圓110，其包括晶圓基板96及 102 〇 95384.doc 1241882 參照圖9。圖8的組合晶圓11 〇會切單為分離的單位。因 此’晶圓96可分為單位96α&96Β，及晶圓102會分為單位 102Α及1〇2Β。單位U2是完全相似的，及各者包括一個別 的積體電路98。單位1〇2Α及102Β的上方會金屬化。多個單 位會架設在支撐基板上及焊壓至支撐基板。或者，單位1 02A 及102B會向下變薄，單位1〇2八及1〇2B中的通道會金屬化電 連接至支撐基板。
接著’ 一集成散熱器114會架設至單位96A之晶圓基板部 份的背側，即，積體電路98的背面，及一熱沉116可設置及 架設為倚靠集成散熱器114。 後附圖式中會描述及顯示示範實施例，吾人應了解，該 等實施例僅供繪示及不限於本發明，及本發明不侷限於已 顯示及已描述的特定構造及結構，而熟習該項技藝者可做 改良。 【圖式簡單說明】
本發明會參照後附圖式以範例描述，其中： 圖1是根據本發明之實施例之部份晶圓基板的剖面側視 圖’该部份晶圓基板已部份處理以製造微電子組件； 圖2之圖類似圖丨，在部份處理晶圓基板的介電層中蝕刻 一開口及在該開口中形成一電熱元件； 圖3之圖類似圖1，在形成另一電熱元件之後，具有一相 反摻雜傳導型及形成在圖2中的電熱元件，如同在部份處理 晶圓之積體電路上的其他零件般； 圖4之圖類似圖3，在晶圓經最後處理之後，切單為個別 95384.doc -14- 1241882 晶粒’及一晶粒會倒扣在一載體基板上及架設在該載體基 板上以完成根據本發明實施例之微電子組件的製造； 圖5為表示根據另一實施例之微電子組件的側面圖，該微 電子組件在面對已切單之晶粒主動側的側上具有電熱零 件’及壓焊至該晶粒主動側上的封裝基板上； 圖6為表示根據本發明另一實施例之微電子組件的側面 圖，其由圖5之實施例推衍，因短塞會以形成在一晶粒主動 側上的傳導互連元件而電連接晶粒對面側上的電熱元件； 圖7為二晶圓基板的側面圖，一者支撐主動積體電路，及 另一者支撐熱電元件，用以製造根據本發明另一實施例的 微電子組件； 圖8之圖類似圖7，在電熱元件設置為倚靠積體電路上的 接觸墊及附著於其上；及 圖9之圖類似圖8，在圖8之組件切單為個別部份之後，及 一積體電路及一熱沉會架設在該等部份之一上。 【主要元件符號說明】 10，110 晶圓 1 〇 A 晶粒 12 ， 96 ， 102 14，98 16 18 20 22 晶圓基板 積體電路 介電材料 積體電路元件 電力板 地線板 95384.doc -15- 1241882 24 ， 100
24G 241
24P 26 26G1 、 26G2 261 26P1 、 26P2 30 ， 40 ， 104 32 ， 36 ， 42 ， 46 34 44 48，50 54 ， 82 ， 108 56 60，72 62 62A、62B 70，86 74 ， 88 ， 94 76 78 ， 114 80 ， 116 84 接觸墊 地線接觸堑 信號接觸塹 電力接觸塹 電連結 地線接觸堑 信號接觸堑 電力接觸堑 電熱元件 擴散障壁層 P換雜的半導體材料 η摻雜半導體材料 傳導間隔零件 傳導互連元件 較高表面 封裝基板 封裝終端 封裝端 微電子組件 晶粒 電熱元件 集成散熱器 熱沉 焊壓線
95384.doc -16- 1241882 90 短塞 102 轉移基板 106 間隔物 112 單位 95384.doc

Claims (1)

1241882 十、申請專利範圍： 1 · 一種微電子組件，包括： 一晶粒基板； 一形成在該晶粒基板上積體電路之，該晶粒基板與該 積體電路共同形成一晶粒；及 複數個電熱疋件，其形成在該晶粒上俾以當電流流經 該等電熱元件時，將熱由該晶粒散去。 2·如明求項1之微電子組件，其令該等電熱元件形成在該晶 粒之側上，且该積體電路位於該晶粒基板與該等電熱 元件之間。 … 3·如晴求項2之微電子組件，其中該積體電路包括一連接至 3等電熱零件之電力板，使得電源經由該等電熱零件提 供至该電力板。 4·如睛求項3之微電子組件，尚包括一電源傳導互連元件， 其形成在各電熱零件上。 5·如4求項4之微電子組件，肖包括複數個地線及信號傳導 互連7G件，其在該等電源互連元件之接觸表面平面中具 有接觸表面。 6.如請求項5之微電子組件，尚包括一載體基板及位於該載 體基板上之複數個載體基板島，各傳導互連元件設置為 倚靠個別載體基板島。 7·如請求項2之微電子組件，尚包括—環繞該等電熱元件之 介電材料。 8·如請求項2之微電子組件’其中該等電熱零件係成對，各 95384.doc 1241882 對包括P摻雜之個別電 尚 t、、、々件及以參雜之個別電熱零件， 2括形成在該晶粒上之複數個連 9. 將個別對之二互連元件互連。 纟連、“件 如睛求項1之微電子組件，並 粒之 〃中5亥專電熱零件形成在該晶 件 iβ亥積體電路位於該晶粒基板與該等電熱零 ":，尚包括一介電材料，其環繞該等電熱元件，及 件，因“― 板，其連接至該等電熱零 10如、H亥等電熱零件而提供電源至該電力板。 明求項8之微電子組件，尚句 ^A . L 〇句括一載體基板及位於該載 土板上之複數個載體基板島， 倚靠個職體基板島。 各傳導互^件設置為 之微電子組件’其中該等電熱元件形成在該晶 貝_J上’且該晶粒基板位於該積體電壓與該等電埶 兀件之間。 τι、、、 1 2·如請求項11之微電子組件 該等電熱零件。包括一介電材料，其環繞 13· Γΐΐ項U之微電子組件’其令該等電熱零件係成對， 各對包括Ρ摻雜之個別電熱零件及η摻雜之個別電熱零 件’尚包括形成在該晶粒上之複數個連結元件，各連結 元件將個別對之二互連元件互連。 'I 14·=求項U之微電子組件，尚包括—載體基板，該晶粒 木,又至邊載體基板及該等電熱元件電連接至該載體基 板，以接收來自該載體基板之電源。 土 I月求項14之微電子組件’尚包括位於該載體基板上之 95384.doc 1241882 複數個載體基板島，連接至該等電熱元件之複數個電熱 島，及複數個焊壓線，各者具有一附著至個別載體基板 島之部份及附著至個別熱電島之另一部份。 16·如請求項15之微電子組件，其中該等電熱島形成在該晶 粒基板上。 17·如請求項16之微電子組件，尚包括複數個傳導互連元 件，其附著至其側上之晶粒，且該積體電路位於該等傳 導互連元件與該晶粒基板之間，各傳導互連元件與該等 載體基板島中之個者接觸。 18·如請求項11之微電子組件，尚包括複數個傳導互連元 件，其附著至其則上之晶粒，且該積體電路位於該等傳 導互連元件與該晶粒基板之間，各傳導互連元件與該等 載體基板島中之個者接觸。 1 9.如請求項1 8之微電子組件，尚包括位在該晶粒中之複數 個電熱通道，一第一複數個傳導互連元件，其將該積體 電路與一第一複數個載體基板島連接，及一第二複數個 傳導互連元件，其經由該等電熱通道而連接至該等電熱 元件。 20·如請求項19之微電子組件，其中該等電熱元件之中至少 一者與該等電熱通道之中一者及該等傳導互連元件之中 一者對齊。 2 1 ·如請求項1之微電子組件，尚包括位在該晶粒上之複數個 曰曰粒島，複數個弟一擴散障壁層，各者位於個別晶粒島 上，各電熱元件形成在該個別擴散障壁層。 95384.doc 1241882 22. 如請求項21之微電子組件，尚包括位在至少一電熱元件 上之至少一第二擴散障壁層，且個別電熱元件位在該第 —擴散障壁層中個別一者與該第二擴散障壁層之間。 23. 如請求項21之微電子組件，其中該等電熱元件形成在該 晶粒之一側上，且該積體電路位在該晶粒基板與該等電 熱元件之間。 2(如請求項22之微電子組件，其中該等電熱元件形成該晶 粒之一側上，且該晶粒基板位在該積體電路與該等電熱 元件之間。 … 25·如清求項24之微電子組件，尚包括一載體基板，該晶粒 架設在該載體基板及該等電熱元件電連接至該載體基 板’以接收來自該載體基板之電源。 土 ’其熱輕合 粒與該熱傳 26.如請求項1之微電子組件，尚包括一熱傳導板 至該等電熱元件，且該等電熱元件位在該晶 導平板之間。 27. 如請求項26之微電子組件，尚包括複數個散熱片，其由 接觸熱之熱傳導板延伸，而將由該熱傳導板所傳導^ 對流至周遭空氣。 …、 28. 一種製造微電子組件之方法，包括： 在一第一支撐基板上形成至少一微電子電路； 在该第一支撐基板上形成複數個電熱元件，當操作， 微電子電路時，該電流流經該等電熱元件 ^ ^ ^ 一 略寻電執 元件將熱由該微電子電路散去。 …、 29. 如請求項28之方法’其中在該微電子電路形成後即形成 95384.doc 1241882 该等電熱元件。 3〇·如請求項28之方法，其中該等 寸电热7L件形成在該晶粒之 一側上，且該積體電路位在 ^ „ 仕及日日粒基板與該等電熱元件 t間0 31·如請求項30之方法，尚包括在各電 扁、# 你合电熟零件上形成一電源 傳導互連元件。 32·^永項31之方法’尚包括形成複數個地線與信號傳導 互連元件，在該等電源傳導互連元件之接觸表面平面中 具有多個接觸面。 33·如請求項32之方法，尚包括將兮笙铺 狀土 匕枯將5亥4傳導互s元件設置為 ^可罪一載體基板之個別島。 34.如請求項28之方法，尚 〜括形成一介電材料，在該介電 材料中形成第一複數個開口，在第一 ^ 牡弟複數個開口中形成 一第一傳導類型之多個電埶 y …、70仟接者在該介電材料中 形成第二複數個開口，在該等第二複數個開口中形成一 :二傳導類型之多個電熱元件，該第二傳導類型與該第 一傳導類型相對，及將該等電熱元件對電互連，各對且 有該第-傳導類型之一電熱元件及第二傳導類型二電 熱元件。 35·如請求項28之方法，尚包括在一黧— 匕祜在弟一支撐基板上形成該 專電熱元件，及接著將該等電熱元件連接至該第一支撐 基板。 又牙 36.:凊求項35之方法’其"亥第一及第二基板形成一組合 晶圓，其藉由至少切斷—支撐基板而切單為多個晶粒。 95384.doc 1241882 37. 38. 39. 40. 其中該第一及該第 一支撐基板切斷 如請求項3 6之方法， 為切單該組合晶圓。 種製造微電子組件之方法，包括： 在一第一支撐基板上形成至少一微電子電路； 在第二支撐基板上形成多個電熱元件；及 接著將該等電熱元件連接至該第一支揮基板。 如請求項38之方法，其中該第—及該第牙/基板形成一組 合晶圓，其藉由至少切斷一支撐基板而切單為多個晶粒。 如請求項39之方法，其中該第—及該第二支樓基板切斷 以切單該組合晶圓。 95384.doc
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