TWI240015B - Electrostatic chuck member and method of producing the same - Google Patents

Abstract

The present invention is to provide an electrostatic chuck member having a strong adsorption force and an excellent responsibility (release property) in the stop of voltage application and is an electrostatic chuck member comprising a substrate, an undercoat of a metallic layer formed on at least one surface thereof, a lower insulating layer of Al2O3 ceramic formed on the undercoat, a metallic electrode layer formed on the lower insulating layer and an upper insulating layer of Al2O3 ceramic formed on the electrode layer as a topcoat.

Description

1240015 V. Description of the invention (1) [Technical Field] The present invention relates to a method for constructing conductive members and semiconductors by absorbing electricity such as pellets and insulating members. The electrostatic clamping member and its manufacturing technology background [Technical background] Recently, based on automation and prevent manufacturing process, such as semi-conductor fabrication, production :, cattle conductor or liquid crystal. In the body Ik table, 'constitute its Part of the work is carried out under real working conditions or under reduced pressure. From the standpoint of achieving circuit accumulation or microfabrication, it is necessary to improve the position accuracy of a silicon wafer or a glass substrate such as a substrate during the dry processing. Conventionally, a method that responds to the above-mentioned needs, for example, a vacuum jig or a mechanical jig is used when a substrate is moved or fixed by suction. However, the vacuum clamp is processed under vacuum, so the pressure difference cannot be increased to make the adsorption force weak, and even if it can be adsorbed, it can only partially adsorb the part, resulting in the disadvantage that the substrate is not correct. Since the above-mentioned wafer processing high-temperature gas cannot be cooled, it has the inconvenience that it cannot be applied to the recent high-performance semiconductor manufacturing process. On the other hand, when a mechanical jig is used, there is a disadvantage that the inspection time is required due to the complexity of the device.

2053-3738-PF.ptd Recently, in order to improve the conventional technique as described above, an electrostatic clamp using electrostatic force has been developed and widely used. However, this technique also has the following problems.

The fourth stomach 1240015 V. Description of the invention (2) This is 'After the substrate is held by an electrostatic clamp and the pressure cannot be removed, the substrate and the electrostatic clamp = when the substrate is used' When the power is cut off, it cannot be completely removed. What is the charge (adsorption), the problem. The above countermeasures are known to be improved in this φφ + θ. For example: #Electric fixture uses insulating dielectric material. It shows an example of using aluminum nitride and nitride as high insulators. An example of a high-insulator sheet and Si + SiC plate is disclosed in JP-A-6-80 89, a sintered body or a spray film of a mixture of powders disclosed by JP-A-6- 3 0 2 6 7 In the No. 7 bulletin, after the surface is coated with titanium oxide, it is coated thereon. } In Japanese Patent Publication No. 6-36583, an example of using alumina as an insulator is disclosed. Japanese Unexamined Patent Publication No. 5-23-23 5 52 and Japanese Unexamined Patent Publication No. 6-8089 disclose the use of aluminum oxide, aluminum nitride, zinc oxide, boron nitride, silicon, silicon nitride, and nitrogen compounds. Examples of insulators. Japanese Patent Application Laid-Open No. 3 -1 4 7 8 4 3 and Japanese Patent Application Laid-Open No. 3-2 0 4 9 2 4 disclose that when a larger electrostatic force is necessary, Ti02 with a high dielectric constant is added to a high insulator. And the method of reducing the volume intrinsic resistivity to increase the electrostatic force. The high-insulation insulators such as TiO2 and TiO2 have the shortcoming of a temporary adsorption force when the power is turned off. Here, a technical example f 'which overcomes this disadvantage is disclosed in JP-A No. 1-2 2 2 8 2 6 or JP-A No. 1-6 9 8 5 5 etc., in order to shorten the silicon wafer detachment time. Reversing electrode polarity

1240015 V. Description of the invention (3) Method. In the f Kaiping " 4663Λ bulletin of the circle method, in order to quickly get rid of Shi Xiyue, it is impossible to expose the case where the-part of the insulating layer is coated with conductivity to form a low square, revealing static electricity with a water-cooled structure :: = "Due to this, using the A 1? 〇, · τ 彳 η phase λα — layer of the electrostatic fixture, has the following problems: " Tl02-type south insulating spray (1) mixed with Ti〇20nl203 This type of spray layer has a volume intrinsic impedance of 22 and a small current, so it can be expected that the electrostatic force will be enhanced by the Jensen M. Rahbek's f0rce effect.

The TiOJ semiconductor material has a slow charge moving speed, so the response characteristics (saturation adsorption plus arrival time, adsorption force elimination time) of the stoppage of the electrons are deteriorated, and this characteristic is particularly significant in low temperature environments. In addition, in order to make the volume intrinsic impedance into a practical state of 1 × 109 Ω · cm, it is also necessary to mix Ti02 with about 25% by weight. However, the addition of a large amount of Ti02 to the semiconductor manufacturing process means that impurities are mixed in, which will cause a reduction in quality and cause pollution to the working environment. When the attached semiconductor wafer is at room temperature or higher, the volume inherent resistance is too low, so a large leakage current may flow and damage the wafer circuit. / ， =) Α 2 02 type spraying layer mixed with Ti〇2 is carried out by the spraying method ..., and 'the deviation of the inherent volume resistance and adsorption force of the coating layer obtained by this method becomes large, and production The performance becomes lower, so it becomes the cause of cost increase.

Η ^ ιι 面面 Page 6 1240015

Therefore, the present invention reduces the application of the voltage-stopping film of the present invention, because the insulating substrate of the present invention which pollutes the environment with the halogen contained in the present invention, the present invention overcomes this by including the productivity and performance of the metal edge layer. [Invention of the metal electrode ceramic of the present invention, that is, at least one surface has the deviation of Al9 according to the present invention, and the high-quality static electricity is to provide a good response performance (release) during suction. Another purpose is to provide static contact. The physical erosion of plasma and other materials, Ti02, which is another purpose of silicon wafers, is another purpose, and it is aimed at allowing temperature to be used when the temperature changes. Still another object is to coat the member with a good coating so as to surround the electrode with a ceramic coating formed by a spray method. An electroenergetic miscarriage with strong power and another stop. τ The electrical runaway member is spray-coated with rational backlash or damage to ring J, and is not used; the conventional method of sintering A1 0 is easy to damage, so 2 "'· overcomes the conventional electrostatic clamping structure The shortcomings of the spray-emitting layer are not only most of them, but also have high electrostatic characteristics. The electrostatic clamping member is not only formed on the surface of the metal substrate, but also is formed by stacking by spraying. The basic structure of the electrostatic clamping member of the present invention is that the surface on the substrate has a metallic bottom coating, and this bottom is coated with a lower insulating layer made of 03 ceramic, and the lower insulating

1240015 V. Description of the invention (5)] 2 has a metal electrode layer, and the m-edge layer is used as a top coating of the "spraying layer" structure, followed by two degrees. The insulation layer is 100 ~ 500 layers thick. In addition, the metal f 胄 pole / electricity / thickness layer is artificially thick—the degree of emissivity is preferably 7%. The content of lice is less than 2wt%, and the stoma A 12 〇3 is based on the structure Qiu Shaocheng ^ ^ 98. 〇wt% aj, ^ ^ # / ΛΤΛΥ ^ ^ ^ ^ ^ It is best to form 1 ~ 8%. The material is formed by thermal spraying, and the porosity of the upper insulating layer is B. Τ is composed of impregnated organic or inorganic rocks; = the surface of at least one of the layers' takes the volume solid resistivity of this layer; c performs sealing treatment, and the range. The machine early is preferably between lx 1〇13 ~ IX 1〇ΐ5Ω.⑽

Ni is selected from W, A1, Cu, Nb, Ta, and M based on the electrode f. , The formed layer. Among the alloys of 70 metals on M, at least one of the two kinds of molten shots is raised: ίΑ ″ 2, between the lower insulating layer of Tao JJ, with a bottom coating for improving 5 Μ ΐΐ It is preferably selected from the group consisting of Ni, A1 Cr, Co, Mo, and one or more types of 1V u and ytterbium. It is considered that the coating on the top of the insulating layer of the electrostatic clamping member part of the alloy of the metal element is called the contact surface of the layer called "Taumann", and the contact surface on which the machining surface is processed is preferably The surface roughness of M i is about 1240015. 5. Description of the invention

Ra: 0. 1 ~ 2. 〇 or so. For example, the metal-bottomed member is manufactured by the solvent injection method, such as the method. Pulp melted? , Reduced pressure plasma dissolution method, explosive f atmosphere 丨 2 〇3 ceramic insulation coating construction can be mined = plasma spray method, M-reduction electrofusion melting [picture, a simple explanation] find [actual The cross-sectional structure of the electrostatic luminaire of this invention is shown conceptually.

[The best form of the yoke invention] J 回 jW will be described. With regard to an example of manufacturing the electrostatic jig of the present invention by a solvent injection method, < First, ' a metal substrate made of a metal substrate is spray-molded with gold to form an under coat. By using the surface of c material to form the lower part of Al2O3 ceramics, the following shot: η its bottom coating shot method on the surface of the lower shot insulation layer :, Ran uses the formation of the t-type plasma solvent electrode layer, so that This can be used: ΐ: 金属 The metal melting shot electrode, the electrode. ‘Insulation.’ By this, the system is made as in the first day, ceramics to form a shot holding member. As shown in the figure, the electrostatic clip is not a laminated layer =: = From the use environment, it will not be affected by the environment ', and after a long time, it can also permanently maintain the initial plasma of 2053-3738-PF.ptd Page 9 1240015 V. Description of the invention (7) Compared with the upper part of Al2O3 ceramics, the diameter of the spray electrode layer is best used; less: two straight through the above-mentioned metal, so that the end face of the electrode is not exposed to the outside. On the substance. Among them, the symbol 1 is a metal substrate, 2A is a bottom coating composed of a temporary metal spray layer, 3 is a plate 2 is a metal thermal spray insulation layer, 4 is a metal thermal spray electrode sound, 2 3 Tao Jing The lower part of the composition = shoot? The upper part of Tao Jing's dissolving and radiating insulation layer is called the top two power source, 8 is the ground wire, and 9 is the copper wire for electric grinding load. Qiao Xi said sleepy, 7 is the direct current 10 is the symbol of the upper thermal spray insulation layer 3 and the lower thermal spray insulation — the position where the thermal spray insulation layer directly contacts. ， 'B female A 丨 203 ceramic material, = pass = shape f the above-mentioned metal base coating 2 of the molten shot material _ material is best to use Nl, Al, Cr, Co, Mo and other metal formulas, such as, For some alloys of these metals, the layer thickness is 30 ~ ϋχ 3 疋. This thickness is 300 # m, preferably 50 ~ 150 " m 2m, because if the layer thickness is less than 30, the layer thickness will be uneven. Disadvantage ’On the other hand, the thickness of the layer is greater than 30 0 // m to be used as a spoon, j, and it will not be particularly improved in function, so it is not appropriate to consider from the classics. It is formed on the bottom coating layer 2 and is located on the upper part and lower part of the metal spray electrode. The upper θ bevel layer and the lower shot insulation layer composed of Μ ceramics formed in a sandwich are required to be good. Electrical insulation, corrosion resistance, plasma corrosion resistance. Because this layer must be high purity and dense. The inventors confirmed through experiments that the purity was more than 98%, especially ". Nowadays, the porosity of the spray coating layer is 8%, especially around ^. Hehe

2053-3738-PF.ptd 1240015 V. Description of the invention (8) The thermal spray formed on the lower part must be selected from w, A 丨 r, 1τι; the metallic spray electrode layer on the surface, which is at least one kind of metal The former, 0, Nl, and each of these gold Am ranges. 1 Reasons Further, the thickness is preferably in the range of 5 to 100, as the function of the electrode will be reduced; f. If the degree is less than 5 = porous of the layer, in particular, 10 to 30% is more suitable, and it is particularly uneconomical. Special discouragement:: 1 layer: = work though = the smaller the better, but the problem is formed by the spray method. In addition, it has been confirmed through experiments that if the porosity is less than 1%, it will be sprayed in the atmosphere __ residues in the ambient gas :: together; if the mL rate is greater than?% It is not suitable because it generates heat and heats up the electrode layer. The glaze helmet 5 melts the f-electrode layer, which is a source of oxidation generated when the metal is sprayed in the atmosphere. This is not desirable. According to the experimental results, it has been confirmed that = 1 has a mixing amount of 2% or less, and it is used as a dissolution electrode layer. There is no special damage. Therefore, the sputter electrode layer formed by the present invention has an oxygen content of 2% or less. Secondly, the upper layer of A 12 03 formed by the top layer of A 1203 ceramics is used as a top coating. It is best to use machining (grinding) to grind the surface __ parallel to the surface of the metal substrate , And the completed surface roughness Ra is 0 0 0 2 / M or less. · In particular, if necessary, apply a liquid organic silicon compound (fluorenyl · silane · tri · isocyanate) to the upper shot-blasted insulating layer ground by this machine.

2053-3738-PF.ptd 1240015

V. Description of the invention (9) Salt; phenyl · silane · tri · isocyanate or inorganic silicon compound (zhenolate; silicon compound of alkali metal), and then heating at 1 2 0 ~ 3 5 0 ° C 1 to 5 hours, ° Sealing treatment. This sealing treatment essence is filled with a silicon compound remaining in the fine 1-hole portion of the refining layer, which can prevent the adhesion of foreign substances and prevent the intrusion of rot gas in the environment. In addition, this plugging treatment can also be performed with A 12 〇 3 ceramic solvent-sprayed insulating layer in the lower part of Feng j. As described above, the construction of the bottom coating of the metal spray layer, the metal spray electrode layer, and the upper and lower thermal spray insulation layers made of A203 ceramic can be performed by plasma spray method or high-speed flame method. , Burst spray method, ^ light ^ spray method (only metallic), but from the viewpoint of productivity and quality stability, 'come', especially atmospheric plasma spray method or decompression plasma spray method are more suitable, Business. Example 1 ^ After sandblasting the part of the base material (width 50mmx length 100mmx height 5mm) to roughen it, the flame method was used to treat «· 80wt% Ni-20wt% Al alloy, here On the roughened surface, a bottom coating having a thickness of 80 β m was formed. Then, an atmospheric plasma spraying method was used to form A 丨 2 03 ceramics with a thickness of 1 5 0 // m on the bottom coating. Then, an atmospheric plasma spraying method was used to spray A 丨 203 ceramics. A metal crane (60) was formed on the layer to serve as a thermal spray electrode layer. In this case, the amount of oxygen in the electrode layer was 0.11 wt%. Next, an atmospheric plasma spray method is used to form a thickness of 30 Am ~ 500 // 111 on the surface area layer of the above-mentioned metal tungsten electrode layer. The upper part of the 203 ceramic is a thermal spray insulation layer to be used as a top coating And then used as a test strip. The test piece produced as described above was placed in the following rotten environment for 200 consecutive hours to investigate the invasion of ~ A1203 ceramics, including the upper part and the hall.

No. 1240015 V. Description of the Invention (ίο) The corrosion component of the pores of the insulating layer causes the corrosion of the metal tungsten electrode. (1) Salt water spray test (JIS Z 23 71) (2) Halogen corrosion resistance test (Place the test piece in a static state, and introduce a mixed gas of 120 ml of CHF3 40 ml + Ar 60 ml per minute into a plastic corrosion test device. In the environment, the test temperature is 60 ° C) " The results of the above corrosive test are shown in Table 1 briefly. As shown in Table 丨, if the thickness of the upper layer of the spray insulation layer made of ai2o3 ceramic is 8 "m or more, the salt spray resistance test will be performed during the salt spray resistance test, which can block the corrosive components invading the interior. And Tungsten Thunder &Win; M wins the first two losses and the M electrode layer is completely determined to be non-corrosive. 4Uh said that 07 external regulations 0. On the other hand, Al2O3 ceramics constitute the upper part of the spray insulation layer. If the thickness of the hot and corrosive ingredients enters the second 30 mouths through the stomata, the electrode function tends to disappear: a piece of crane electrode layer is severely corrupted.

(Remarks) ... (0-thickness unit is V. Corrosion change 55 ££ a no difference tZZZsgt m halogen resistance test wide rice discoloration large rice discoloration large dust rice discoloration no abnormality no abnormality i abnormal note Comparative Example Invention Example 2053-3738- PF.ptd Page 13 1240015

(2) After the corrosion test, the insulating layer of the test portion is exposed, and the electrode surface is exposed, and only the discoloration of the upper insulating layer in contact with the upper part is removed mechanically, and the appearance change and the old condition are evaluated. 2. Example 2 Electrostatic clamping No. 6-36583 of this example) Proposed metal thermal shock test. = Parts and prior technology (such as the resistance of the spray formation around the kaiping electrode) (1) The present invention is used for the layer structure of the electrostatic clamping member. The atmospheric plasma spray method and the reduced-pressure plasma spray method are used to The thickness and the thickness of the substrate, 2 are formed by atmospheric plasma spraying method. 5 〇 # m of ② the lower shot insulation layer 99 · 5wt% of Al 2 0 3 ③ metal electrode layer: ab ④ upper melting The structure of the comparative example of Al 2 O 3 〇 (2) with an insulating layer of 99.5 wt% was formed by forming a metal W of 30 by an atmospheric plasma spray method and forming a metal W of 30 by a reduced-pressure plasma spray method. Forming 150 // m ① bottom coating: a · 80wt% Ni-20wt% Al with a thickness of 丨 〇〇 formed by atmospheric plasma spray method

2053-3738-PF.ptd Page 14 1240015 — V. Description of the invention (12) ② Insulation layer: Large ”= covering 99.5wt% iAl203. The emulsion galvanophoresis method was used to form e u with a thickness of 15 °, and a comparative example was applied to the entire periphery of a substrate having a diameter of 100 nm and a thick substrate. Xu Yi Feng Feng AImm (3) Thermal shock test strips: 3500Cy 4 g y in air, air blow !. Minutes of operation are working; 'Take 25. . Compression test. Tian Zuo 1 performed the test by himself and performed 10 cycles. (4) Test results The results of the above tests are shown in Table 2. It is known that the comparative example of the thermal spray around the base material is coated with the bottom coating, and after 1 to 3 cycles, it is clear that there is a crack in the moxibustion. The reason for this should be: “The thermal expansion coefficient of the 2 3 lysing layer is greatly different.” Because the layer surrounding the substrate is formed, the UI g „is the result of great stress. So what is the role of this layer? The layer required for the structural elements of the present invention has been subjected to w cycles ^. ㈣ maintains the unitary state, and has a high thermal shock resistance

1240015 V. Description of the invention (13) Table 2 Surface mi mi ~~ Thermal shock condition No. Bottom coating lower insulation layer metal electrode layer upper green insulation layer 350〇CX 15 minutes < = > Air cooling note 1 Yes Yes Yes * 0) No abnormality even after 10 cycles. Comparative Example 2 Yes Yes Yes * (2) No abnormality after 10 cycles 3 Yes No No No abnormality after 3 cycles 4 No No No Examples of non-abnormal inventions (Remarks) (1) The bottom coating is 80wt% Ni—20wt% A1 with a thickness of 100 // m. (2) The metal electrode layer * (1) is the atmospheric plasma spray method. Forming a metal w of 30 (the oxygen content is 0 · 丨 2 ^^ reference * (2) is a metal W forming a 30 r,. ^ ^ ^ By a reduced pressure plasma spray method (oxygen content of 0.12 wt%) (3) The insulating layer is a 1 〇. + 丄 ^ ΓWhite 1 The atmospheric spray method 150 β m using Ai 2 0 3 Example 3 This example is to attach a silicon wafer to an electrostatic clamp to hold a power source. After the change in the residual adsorption force at OFF with time, the test (1) formed the following 'solvent-emitting layer holding structure' on a statically formed Ai substrate having a diameter of 6 适合 suitable for the conditions of the present invention. Layer ① Bottom coating: 80wt% Ni-20wt% Al δ〇 & ② Lower shot-emitting insulation layer · A 12 03 1 5 0 / zmm ③ Metal electrode layer: W50 // m ④ Upper shot-emitting insulation layer : The Al2O3 15o "Melon (2) Comparative Example of the Electrostatic Lost Structure" Page 16 2053-3738-PF.ptd 1240015 V. Description of the Invention (14) ① Bottom Coating: 80wt% Ni-20wt% Al 80 vm ② Top coating: 88wt% Al203-1 2wt% Ti 02 300 // m The electrostatic adsorption force is 1KV voltage on silicon wafer and electrostatic fixture for 1 minute in a vacuum container of 0 · 〇1 hpa After that, the power was turned off to measure the detachment force (Pa) of the Shixi wafer from the electrostatic jig for testing. The results show that the use of the power-generating jig of the present invention causes the adsorption and disappearance immediately after 0 FF of the power source, and compared For example (known technology) of an AI2 〇3 -T 1 〇? Electrostatic clamp, it takes 30 to 4 5 seconds until the adsorption and disappearance. Example 4 In the aluminum substrate used as the electrostatic clamping member layer of the present invention (Width 5 Omm X Length 50mm X Thickness 5mm) After sandblasting to roughen, 80wt% Ni—2 〇wt% Al alloy has a thickness of 70. However, a person 1203 with a thickness of 18 // 111 is formed on the top by a plasma spray method, and then f is formed by 50% on the top by a plasma spray method. m of metal tungsten. Next, a plasma thickness of 200 Å is formed on the top by the plasma spray method, and then-Li = using a commercially available liquid organic stone resin to coat and dry as a sealant, and then use this as Test strip. After a certain area (10mjn > < 10mm) of the test piece is exposed, the other trowels are covered up. Then, in a gas containing a halogen compound, the plasma ·· = electric connection, ..., only After 40 hours, the maximum loss thickness was used to assess the amount of loss due to plasma corrosion. Test conditions

, Body composition CF4 + lOOml + 02 lml + Ar 10000 ml High frequency output 1200W

1240015 V. Description of the invention (15) '-Pressure, atmospheric pressure. In addition, the comparative example of this test is that after passing A1 substrate through Almite, the same layer structure as that of the present invention is formed, and then 200 “m

Al2O3_12wt% Ti02 was used as the upper shot-fired insulating layer, and the test was performed on the same strip. The results of this test show that the Almite-treated thin layer of the comparative example is completely lost compared to the corrosion of the solvent-emission insulation of the present invention at about 12 to 15; and the substrate A1 is also lost (50 to 70 ym), and Αΐ203 + η〇 sounds the loss of 3 to 38, and the electrostatic clamping member 2 ^ ·· composition of the present invention is extremely stable in the plasma environment. As described above, in the chemical industry, the electrostatic clamping member of the present invention has excellent impact resistance and abrasion resistance. In addition, the upper and lower surfaces of the metal-soluble radiation electrode layer are melted by Al203 ceramics. The insulating layer is lost to form a sandwich; the Coulomb force can fix the Shi Xi wafer, so the holding force U is lost when the power is removed, and the silicon wafer is easily detached, which can improve the operating efficiency. 2 The top coating system of the electric clamping member is composed of a thin coating layer, so it is resistant to the abrasion of the plasma. It has a good resistance to the abrasion of the plasma. It has high properties, so it also suppresses the residual reaction of environmental component effects and the formation of A, etc.), and has an indirect eye to prevent environmental pollution-the metal ejection electrode layer of the electrostatic clamping member

It is still enough to maintain excellent functions and effectively promote electric power such as Shi Xi wafers.

Claims (1)

901011Q6 > Month of Year >! Steady Correction > Li ^ -φEvery profit · Fan Guan 1-An electrostatic clamping member, at least one surface of the substrate with a metal thickness of 30 ~ 3 0 0 The bottom coating has a bottom insulation layer with a purity of 98.0wt% y. The ceramic powder of MAA ceramic powder on the bottom has a shot hole of ~ 8% and a thickness of 100 ~ 500. , The lower insulating layer has a particle diameter larger than that of the thermal spraying material used for the insulating layer: a metal spraying material is sprayed to form a metal electrode layer having an oxygen content of 2wt% and a rate of 7%; and The ΑΙΑ ceramic powder with a hole of 98. Owt% or more is sprayed into a porosity of 8% and a 100 ~ 500 # 〇! Person 12〇3 Taoman composed of an upper insulator formed by the above ^ upper insulating layer and the lower part The surface of the cover is covered by an organic or helmet machine. ^ ^, The silicon compound sealing treatment of the machine 2. The bottom coating as described in the scope of the patent application The system is selected from the group consisting of Ni, Ai, & members, alloys of the above eight metal elements, 〇, 〇 And it contains a layer of metal 3. The upper insulation layer and the lower insulation layer bulk solid resistive clip as described in item 丨 of the scope of the patent application 夺 seize the component 'of the range of χ1015Ω · 〇πm. Resistivity) 丨 in lxlO13 ~ 1 4 · The metal electrode layer described in item 丨 of the patent application scope is selected from ψ, A1, cu, N electric clamping members, among which there are more than one of these metal elements. ^, Ta, Mo, Ni, and containing layer. At least one kind of $ electric clamping member formed by spraying, wherein 2053-3738-PF2.ptc page 20 5. As amended by the scope of patent application No. i 1240015 J # 90〇imi〇fi VI. Patent application scope 处理 ΐ Ϊ? Treatment layer 'This sealing treatment layer is used on the surface of at least one of the lower and upper grinding surfaces, coating liquid: = = nothing After the compound is heated at 12 °, the temperature is 5 ° 5 ° | 6 °. The manufacturing method of the electrostatic clamping member is characterized in that after the sand-blasting treatment is performed on the base surface, the rough surface of the substrate is coated with a coating. D A metal layer is formed to form A_1 with a thickness of 30 ~ 3 0 0 ^^ “ί * Following this bottom coating, 98. wt% or more of the Ministry 2 must 3 end households 4 connections, T porosity O12% is formed for the purpose of 8%. The oxygen content is formed by melting the shot on the insulating layer with a molten shot material for the insulating layer and forming the oxygen content as ^ ^ ^ ^ ^ 98. Owt% AVaI ο V , Λ ^ t ^ Thickness 1〇◦ ~ 50 "m of A1 0 Pottery 3 and Pottery powder to form a porosity. At least one of the above upper and lower insulating layers: layer pull; mechanical or inorganic The insulating layer of the sealing compound of Shi Xi compound. Stomach 7. The method of static electricity as described in item 6 of the scope of the patent application, wherein the above-mentioned bottom coating is selected from the group consisting of N, 冓, and Cr, Co, and Mo containing one or more of these metal elements. The metal layer is formed by spraying more than one of the types. 8. The method described in item 6 of the scope of patent application, wherein the upper insulating layer and the lower electrical supporting member are manufactured to have a volume solid resistivity of 1 X 1 〇13 ~丨 χ pi5 is shaped by sealing treatment 9 · As in the scope of the patent application scope No. 6 0 5 ^ · cm range. ≪ Manufacturing of electrostatic clamping members _ Case No. 90101106 Application: Patent scope-^ Correction method Among them, the metal electrode layer is made of Ta, Mo, Ni, and contains! The species is formed by shooting at least one selected from w, M, Cu, fairy, and less. Among the alloys of some metal elements, up to 10 Range 苐 6 method, in which the upper surface of the insulating layer and / or the manufacturing surface of the electrostatic clamping member is coated with a liquid organic system or a helmet or one of the lower insulating layer. Table 120 ~ 350 ° C heating 5 After a small dagger = silicon compound, a seal hole is formed at 1 1 Fang ,, >, Ming and Li, the manufacture of the electrostatic clamping member described in item 6, the surface of the upper insulating layer with M as the top coating is mechanically ground to complete the surface roughness Ra: 〇 · i ～ 2 · 〇. 2053-3738-PF2.ptc Page 22