WO2002067312A1 - Parts of apparatus for plasma treatment and method for manufacture thereof, and apparatus for plasma treatment - Google Patents

Abstract

Parts of an apparatus for plasma treatment which is to be disposed inside of the body of the apparatus and to be exposed to a plasma atmosphere (a focus ring, a shield ring, a protecting ring, a shielding member, and a first or second bellows cover), characterized in that they are formed of one of a polybenzimidazole material having been subjected to a drying treatment, a sintered ceramic material and a material containing a silicon oxide as a primary component and another material specified.

Description

 Description: Components for plasma processing apparatus, method for manufacturing the same, and plasma processing apparatus

 The present invention relates to a component for a plasma processing apparatus, a method for manufacturing the same, and a plasma processing apparatus. Background art

 2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, for example, a plasma etching apparatus is used to perform an etching process on a workpiece such as a semiconductor wafer and perform desired fine processing on the surface of the workpiece. Is being applied.

 In this type of plasma processing apparatus, an upper electrode and a lower electrode are disposed opposite to each other in an airtight apparatus main body, and high-frequency power is applied to the lower electrode on which an object to be processed is placed, so that the lower electrode and the upper electrode And a glow discharge is generated between them. The processing gas supplied into the processing chamber is turned into plasma by the glow discharge, and the workpiece is etched. As a processing gas, a CF (fluorocarbon) -based gas has been widely used.

The above. In plasma etching apparatus, the apparatus main body Arumai bets treated A 1 (Aluminum Niu beam) metal is used as the base material, A 1 ₂ 0 3 which is sintered (Aluminum Na) A ceramics member is detachably mounted over the entire inner peripheral surface of the apparatus main body.

In the conventional plasma edge quenching apparatus comprised of a outer wall portion of the apparatus made body A 1, A 1 ₂ 0 ₃ that is detachably attached to the inner peripheral surface of the outer wall (alumina) Seise la mission-box member Even if the inner wall of the main unit is cut and damaged by plasma, it can be treated by replacing only the inner wall. Processing of the physical material can be resumed.

 In addition, in a conventional plasma etching apparatus, a focusing ring, a baffle plate, and a like are used in order to effectively confine plasma between an upper electrode and a lower electrode and perform a desired etching process on an object to be processed. Parts such as seal drilling (hereinafter referred to as “parts in chamber”), that is, device parts are arranged at predetermined positions around the upper electrode and the lower electrode.

The tea Nba first internal product has a dielectric constant is required for 1 0 less insulation performance, Ri by conventional, quartz (S i 0 _2), or poly Lee Mi-de (PI) based or poly A Mi Doi mi de ( PAI) -based resin material.

However, tea Nba in part this and many S i 0 ₂ material used as a component material of the amount is large adhesion to debris of component surfaces which occurs during machining. When the plasma etching device is operated with the crushed particles attached, the crushed particles become solid fine particles, scatter in the plasma atmosphere, and adhere to the surface of the workpiece.

 Therefore, until now, the number of solid fine particles adhering to the object to be processed is within the allowable range (for example, the number of solid fine particles having a particle diameter of 0.2 m or more is within 30). Dump operation is performed using the object to be processed. Then, after the dummy operation, a new workpiece is subjected to a dry etching treatment to obtain a desired microfabricated semiconductor product.

However, as described above, conventional chamber parts made of quartz or PI-based or PAI-based resin materials are exposed to a plasma atmosphere. -Based and PAI-based resin materials have poor plasma resistance; they are easily removed by the plasma-treated gas, and the components in these chambers are frequently replaced with new ones as consumable parts. However, the maintenance and inspection of the equipment is troublesome, and the productivity is low. Further, the above-mentioned conventional plasma etching apparatus, since the inner wall of the apparatus body cormorants I described above is formed by A 1 ₂ 0 ₃ made canceler mission-box member, as the process gas and the A 1 ₂ 0 3 Reacts with the CF-based gas to produce A 1 F 3 (aluminium). 1 a pressure is A 1 a vapor pressure of F ₃ (room temperature 2 0 ° C for Ri by the low pressurization及Pi high power of the processing chamber due to microfabrication of the object to be processed the processing chamber (Cha Nba). 6 X 1 0 - ⁴ approaches P a), a 1 F ₃ becomes solid fine particles. The solid fine particles of A 1 F ₃ drop off from the inner wall and the components arranged in the apparatus main body and are scattered in the plasma atmosphere. The scattered solid particles of A 1 F ₃ adhere to the surface of the object to be treated, causing A 1 contamination, which is a kind of metal contamination, and lowering the product yield. Et al is, when using the S i 0 ₂ material as a tea Nba in part, to attach a large amount of debris on the surface of the S i 0 ₂ material, the number of solid particles scatter a plasma atmosphere There was a problem that long-time dust operation had to be performed until the allowable range was reached.

 Therefore, the present invention has been made in view of such a problem, and has been developed by improving the plasma resistance of components exposed to a plasma atmosphere disposed in an apparatus main body, thereby improving maintenance. An object of the present invention is to provide a part for a plasma processing apparatus capable of extending a cycle, a method for manufacturing the same, and a plasma processing apparatus.

 Further, the present invention can improve the product yield by avoiding metal contamination of the object to be processed, and can further improve the durability and the productivity of the parts as well. An object is to provide a component for a plasma processing apparatus, a method for manufacturing the same, and a plasma processing apparatus. Disclosure of the invention

The present inventors have developed a material for a plasma processing apparatus component having excellent plasma resistance. After diligent research to find out, polybenzimidazole (hereinafter referred to as “PBI”) has been compared to the materials used in conventional chamber components, such as quartz, PI resin, or PAI resin. It has excellent plasma resistance and excellent adhesion, so it can easily adsorb solid fine particles generated in the processing chamber and minimize the scattering of solid fine particles and the accumulation on the workpiece. I got the knowledge.

 On the other hand, since PBI has a property of high water absorption, if PBI is used as it is, water may adhere to the object to be treated and adversely affect the product.

 As a measure to remove moisture adhering to the workpiece, after etching the workpiece, the supply of the processing gas is stopped and the moisture is blown off by performing a dummy operation for a certain period of time. It is possible, however, that extra time is required for the dummy operation, which leads to lower productivity.

 Therefore, the plasma processing device component according to the present invention is a plasma processing device component disposed inside the device main body of the plasma processing device, and is characterized by being formed of PBI that has been subjected to a drying process. are doing.

 According to the above configuration, the parts for the plasma processing apparatus are formed of the PBI that has been subjected to the drying treatment, so that the plasma resistance of the parts can be improved and the product can be manufactured without performing the dummy operation. Water adhesion can be avoided.

 Further, the method for manufacturing a part for a plasma processing apparatus according to the present invention includes a step of performing a vacuum drying process on the powder of the present invention, and then subjecting the powder subjected to the vacuum drying process to a molding process to form a predetermined shape. It is characterized by manufacturing molded articles.

 According to the above-described manufacturing method, the PBI powder is subjected to vacuum drying and then molded, so that a desired PBI part can be easily obtained.

In addition, from the viewpoint of avoiding the occurrence of cracks in the components for the plasma processing apparatus, the second drying treatment is performed at a temperature higher than the first drying treatment temperature set in the vacuum drying treatment. It is preferred that the molded article be vacuum dried again at the processing temperature.

 In the method of manufacturing a part for a plasma processing apparatus, the vacuum drying treatment is preferably performed at a temperature of 140 ° C. to 180 ° C. for 5 to 7 hours.

 Also, in the method of manufacturing parts for a plasma processing apparatus, the first annealing and the third annealing performed at a temperature of 280 ° C. to 300 ° C. for 2 to 4 hours during the mechanical processing after the forming process are performed. It is preferable to perform a second annealing treatment at a temperature of 40 ° C. to 360 ° C. for 2 to 4 hours.

 Further, in the method for manufacturing a part for a plasma processing apparatus, it is preferable that after performing the first annealing process twice, the second annealing process is performed once.

 Further, in the method of manufacturing parts for a plasma processing apparatus, it is preferable to perform a vacuum drying treatment at a temperature of 200 ° C. to 250 ° C. for 2 to 4 hours after performing a cleaning treatment after machining. New

 A plasma processing apparatus according to the present invention is a plasma processing apparatus for exciting a plasma inside an apparatus main body to finely process a surface of an object to be processed. The plasma processing apparatus is disposed inside the apparatus main body and exposed to a plasma atmosphere. It is characterized in that parts are made of PBI that has been dried.

 According to the above configuration, since the parts exposed to the plasma atmosphere are formed of the dried PBI, the water absorption of the PBI due to the water absorption of the PBI does not occur. Plasma resistance can be improved. Moreover, since PBI has excellent adhesion, it is possible to minimize the accumulation of solid fine particles generated in the apparatus main body on the object to be processed. Further, in the plasma processing apparatus according to the present invention, it is preferable that the water content of the dried PBI is not more than 3700 ppm.

In addition, PBI is used for plasma processing equipment components installed inside the plasma processing equipment, and is characterized by being dried to a water content of less than or equal to 370 ppm. In addition, the inventors of the present invention have conducted intensive studies to improve the durability and the productivity of the components provided in the plasma processing apparatus, and have found that the sintered ceramics containing no aluminum component. click scan, for example, S i ₃ N ₄ (nitride Ke i containing) as a main component, Y ₂ 0 ₃ consists of (oxide Lee Tsu Application Benefits um), or S i C (carbonization Kei-containing) material, 'or composite material containing two or more of these materials (e.g., S i ₃ N ₄ and S i C) Ri by the that you use, can trigger improve plasma resistance as compared to the S i 0 _2, Moreover, to obtain a finding that can be and child, ∎ we can in this transgression to improve the productivity improvement This ensures that to shorten the time it takes to dummy operation as compared to the S i 0 _2.

 A plasma processing apparatus according to the present invention is a plasma processing apparatus that excites plasma inside an apparatus main body to finely process a surface of an object to be processed. The plasma processing apparatus is disposed inside the apparatus main body and inside the apparatus main body. It is characterized in that parts exposed to the plasma atmosphere are formed of sintered ceramic materials that do not contain aluminum components.

 According to the above configuration, the parts arranged in the inner wall of the apparatus main body and the inside of the apparatus main body, which are exposed to the atmosphere, are made of a sintered ceramic material containing no aluminum component. As a result, it is possible to prevent A1 contamination of the object to be treated, and to improve the product yield.

The plasma processing apparatus of the present invention, the sintered Sera Mi click _{material, S i 3 N 4, Y} 2 0 3, or one or more from among the material mainly composed of S i C Is selected.

By the above-described configuration lever, sintered Sera Mi click _{material, S i 3 N 4, Y} 2 0 3, or by selecting one or more from among the material mainly composed of S i C Since it is configured, it is possible to reliably avoid A1 contamination of the object to be treated, to improve productivity, and to improve durability. . In the plasma processing apparatus, it is preferable that a sintering aid is added to the sintered ceramic material.

 In the plasma processing apparatus, it is preferable that the sintering aid is at least one of yttrium and / or yttrium. The plasma processing apparatus component according to the present invention is a plasma processing apparatus component disposed inside the apparatus main body of the plasma processing apparatus, and is a sintered ceramic containing no aluminum component. It is characterized by being formed of a glass material.

 In the parts for the plasma processing apparatus, the sintered ceramic material is one or two or more materials selected from the group consisting of silicon nitride, titanium oxide, and silicon carbide as main components. It is preferable to select and configure.

 Further, in the parts for the plasma processing apparatus, it is preferable that a sintering aid is added to the sintered ceramic material.

 Further, in the parts for the plasma processing apparatus, it is preferable that the sintering aid is at least one of yttrium and yttrium.

 Further, a method for manufacturing a component for a plasma processing apparatus according to the present invention is a method for manufacturing a component for a plasma processing apparatus disposed inside an apparatus body of the plasma processing apparatus, the method including an aluminum component. It is characterized in that parts for plasma processing equipment are formed from unsintered ceramic materials.

 In the method of manufacturing a part for a plasma processing apparatus, the sintered ceramic material may be one or more of materials containing silicon nitride, yttrium oxide, or silicon carbide as a main component. It is preferable to select two or more types.

Further, in the method of manufacturing a part for a plasma processing apparatus, it is preferable to add a sintering aid to the sintered ceramic material. Further, in the method for producing a part for a plasma processing apparatus, it is preferable that the sintering aid is at least one of yttrium and yttrium.

In addition, the present inventors have conducted intensive research to find a part for a plasma processing apparatus that is more excellent in plasma resistance than a part for a plasma processing apparatus made of a silicon oxide. the object, different material, for example, rare earth compound (Y ₂ 0 _3, etc.), Kei-containing compound excluding Kei-containing oxide _{(S i C, S i 3} N 4 , etc.), Aluminum Niu arm compound (a l ₂ 〇 _3, etc.), or two or more of these components contains a compound (Y ₂ a, ₅ 0 _12, etc.) and this which is added to obtain a finding that favored arbitrariness.

 The component for a plasma processing apparatus according to the present invention is a component for a plasma processing apparatus used for an insulating component disposed inside the apparatus body of the plasma processing apparatus, and mainly includes a silicon oxide. It is characterized in that, in addition to being contained, a predetermined different material other than the silicon oxide is added.

 Further, in the component for a plasma processing apparatus according to the present invention, the predetermined heterogeneous material is one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound. It is characterized by including.

 According to the above configuration, since a predetermined different material other than the silicon oxide is added, a component material having improved plasma resistance can be obtained.

 In addition, as a method of manufacturing the above-described plasma processing apparatus parts, generally, an electric melting method and a gas melting method can be considered. In order to uniformly mix the silicon oxide as the main component and the dissimilar material, it is preferable to use a gas melting method.

In view of the above, the method for manufacturing a component for a plasma processing apparatus according to the present invention relates to a plasma processing apparatus used for an insulating component disposed inside the apparatus body of the plasma processing apparatus. A method of manufacturing a component for a treatment device, comprising adding a specified different material other than the silicon oxide to a silicon oxide, and applying the specified silicon oxide and the different material under an oxyhydrogen flame. Is melted and then cooled to produce parts.

 According to the above manufacturing method, the parts are manufactured using the oxyhydrogen melting method as the gas melting method, so that the silicon oxide and the dissimilar material can be easily and uniformly mixed. In addition, it is possible to easily obtain an insulating component having excellent plasma resistance.

 Further, as described above, the dissimilar material includes one or more selected from rare earth compounds, silicon compounds other than the silicon oxide, and aluminum compounds as described above. It is preferred that

 Further, the plasma processing apparatus according to the present invention is a plasma processing apparatus that excites plasma inside the apparatus main body to finely process a surface of an object to be processed, wherein the plasma processing apparatus is used for an insulating component disposed inside the apparatus main body. The components for a plasma treatment apparatus to be used are characterized in that silicon oxide is contained as a main component and a predetermined different material other than the silicon oxide is added. In the plasma processing apparatus, the predetermined different material preferably includes one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound. New BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is an internal structure diagram showing an embodiment of a plasma etching apparatus as a plasma processing apparatus according to the present invention, and FIG. 2 is a diagram showing a method of measuring a shaving amount (abrasion amount). FIG. 3 is a bar graph showing the evaluation results of the plasma resistance of each type of ceramic material in the first embodiment, and FIG. Flow chart of processing and cleaning process Fig. 5 (a) is a characteristic diagram showing the change over time in the BTM (bottom) dimensions of the etching groove when using PBI resin whose water content was suppressed to 37 ppm. Fig. 5 (b) is a characteristic diagram showing the change over time in the BTM (bottom) dimensions of the etching groove when using PBI resin with a water content of 222 ppm. FIG. 6 is a characteristic diagram showing a change over time of solid fine particles fixed on a semiconductor wafer. FIG. 7 is a graph showing plasma resistance of various ceramic materials in the second embodiment. FIG. 8 is a bar graph showing the evaluation results of FIG. 8, and FIG. 8 is an etching characteristic diagram when Si ₃ N ₄ material is used as a focusing ring. figure off O over Ri Kas Kinoe Tsu quenching characteristic diagram der and was used S i 〇 ₂ material as a-ring, first 0 figure your sixth real施例FIG. 11 is a bar graph showing the evaluation results of the plasma resistance of various ceramic materials, and FIG. 11 is an object view showing a method of manufacturing a plasma processing equipment component material according to the third embodiment. is there. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, components for a plasma processing apparatus, a method for manufacturing the same, and a plasma processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is an internal structure diagram showing an embodiment of a plasma etching apparatus as a plasma processing apparatus according to the present invention.

 In a processing chamber 22 in a plasma etching apparatus main body 1 (hereinafter, apparatus main body 1), a number of various components in a chamber formed in a predetermined shape are arranged at predetermined positions.

Specifically, a lower electrode 2 made of a conductive material is provided in the apparatus main body 1. An electrostatic chuck 4 is placed on the upper surface of the lower electrode 2 to adsorb and hold the semiconductor wafer 3 (workpiece), and an elevating shaft that can move up and down in the direction of arrow A is provided below the lower electrode 2. 5 is provided, and the lower electrode 2 is It is supported by. The elevating shaft 5 is connected to a high-frequency power source 7 via a matching device 6.

 The electrostatic chuck 4 has a ceramic sprayed film formed on an aluminum base material by a plasma spraying method. It is preferable to apply methyl methacrylate as an impregnating agent on the surface of the sprayed coating in order to seal the pores of the sprayed coating. By using methyl methacrylate as the impregnating agent, the pores on the surface of the film to be sprayed can be sufficiently closed to provide a desired space between the semiconductor wafer 3 and the electrostatic chuck 4. Thus, the heat transfer gas layer can be formed, whereby the temperature of the semiconductor wafer 3 can be stably controlled.

 In addition, the bottom and side surfaces of the lower electrode 2 are covered and protected by an electrode protection member 8, and the side and bottom surfaces of the electrode protection member 8 are covered by a conductive member 9. A telescopic bellows 10 formed of a conductive material such as stainless steel is attached between the inner bottom surface of the apparatus main body 1 and the inside. A tubular member 11 made of a conductive material such as oxidized A1 is provided on the lower surface of the electrode protection member 8, and the elevating shaft 5 penetrates the tubular member 11.

 A baffle plate 12 extending in the horizontal direction is fixed to the side surface of the electrode protection member 8, and a gap is formed between the upper end surface of the electrode protection member 8 and the side surface of the electrostatic chuck 4. A focusing ring 13 and an indicator lettering 40 are provided. A first bellows cover 14 extending downward is fixed to the lower surface of the notch plate 12, and a first bellows cover is attached to the inner bottom surface of the apparatus body 1. A second bellows cano 15 is erected so that it partially overlaps with 4.

In addition, near the ceiling in the processing chamber 22, an upper electrode 16 made of a conductive material is provided so as to face the lower electrode 2. A large number of gas discharge holes 17 are formed in the upper electrode 16 and are provided on the upper surface of the apparatus main body 1. A processing gas containing a CF-based gas is supplied from a gas supply port 18 to a processing chamber 22 through a gas discharge hole 17. The gas supply port 18 is connected to a gas supply source 21 via a flow rate regulating valve 19 and an on-off valve 20 provided in the gas pipe G. Accordingly, the processing gas supplied from the gas supply source 21 reaches the gas supply port 18 via the on-off valve 20 and the flow control valve 19, and is discharged from the gas discharge hole 17 to the processing chamber 22. be introduced.

 Further, the upper electrode 16 is held at its peripheral edge by a seal ring 41 formed of an insulating material, and further, a protective ring 42 is formed around the seal ring 41. A shield member 43 is suspended from the outer periphery of the protection ring 42.

 An outlet 23 is formed at the bottom of the apparatus body 1. The discharge port 23 is connected to a vacuum pump 24, and a workpiece transfer port 25 is formed on the lower side of the apparatus main body 1. Loading and unloading of the body wafer 3 is performed.

 The semiconductor wafer 3 transferred into the processing chamber 22 through the processing object transfer port 25 is masked and electrostatically held by the electrostatic chuck 4.

 A permanent magnet 26 is provided on the side surface of the apparatus main body 1 along the outer periphery. The permanent magnet generates a magnetic field in the processing chamber 22 in a direction parallel to the processing surface of the semiconductor wafer 3 held by the electrostatic chuck 4.

In the plasma processing apparatus thus configured, the position of the semiconductor wafer 3 is adjusted by moving the elevating shaft 5 in the direction of arrow A by a driving mechanism (not shown). The elevating shaft 5 acts as a power supply rod, and high-frequency power of, for example, 13.56 MHz can be applied to the lower electrode 2 from the high-frequency power source 7. By applying this high-frequency power, a glow discharge can be generated between the lower electrode 2 and the upper electrode 6. Thus, the orthogonal electric field and the magnetic field are orthogonal. A magnetic field is formed.

 The pressure in the processing chamber 22 is reduced to a predetermined vacuum atmosphere by the vacuum pump 24, and the processing gas from the gas supply source 21 is supplied to the processing chamber 22. This processing gas is turned into plasma, and the plasma confined between the lower electrode 2 and the upper electrode 16 performs desired fine processing on the surface to be processed of the masked semiconductor wafer 3. .

 Hereinafter, a first embodiment of the present invention will be described.

 In the first embodiment of the present invention, the components inside the chamber exposed to the plasma atmosphere, that is, the focus ring 13, the seal ring 41, the protection ring 42, the shield member 43, The first and second bellows covers 14, 15 are made of PBI resin with excellent plasma resistance.

 As described above, the semiconductor wafer 3 is subjected to the dry etching treatment, and the surfaces of the components in the chamber exposed to the plasma atmosphere are also etched and consumed. Parts need to be replaced with new parts. However, quartz, PI resin, and PAI resin, which have been used as component materials for chamber components, have poor plasma resistance, and require frequent replacement of chamber components. However, it was a hindrance to improving productivity.

 The experimental results of the present inventors have revealed that the PBI resin has better plasma resistance than the quartz, PI resin, and PAI resin. The components inside the chamber that are exposed to water are made of PBI resin.

Since the PBI resin has excellent adhesiveness, solid fine particles generated by the reaction with the CF-based gas in the processing chamber 22 and scattered in the plasma atmosphere are easily applied to the PBI resin chamber components. The solid fine particles can be effectively prevented from being deposited on the object to be treated. Here, the molecular structural formula of PBI is represented by the following general formula (1), and PBI contains an imido group (one NH group).

On the other hand, since the processing gas is generally a mixed gas containing Ar gas, O ₂ gas, etc. in a CF-based gas, the PBI imido group reacts with O ₂ in the processing chamber 22. To produce a reactant containing hydroxyl groups (mono-OH groups). As a result, the amount of water absorbed by the PBI resin increases, and the water absorbed by the PBI resin may adhere to the semiconductor wafer 3.

 As a measure for removing moisture adhering to the semiconductor wafer 3, a predetermined etching process is performed on the semiconductor wafer 3, and then the supply of the processing gas is stopped and a dummy operation is performed for a predetermined time. In some cases, it may be possible to eliminate moisture, but this requires extra time for the dummy operation and cannot improve productivity.

 Therefore, in the first embodiment of the present invention, the PBI resin is subjected to a drying treatment in advance, and the dried PBI resin is used as a component material of the components in the chamber.

 Hereinafter, a method of manufacturing the above-described chamber internal parts will be described with reference to FIG.

FIG. 4 is a flowchart showing a manufacturing process of the components in the chamber. First, the PBI powder was reduced by a vibrating vacuum dryer under a reduced pressure of 1,995 Pa (15 Torr) at a temperature of 140 t to 180 ° C for 5 to 7 hours. Vacuum drying (S101), and then, under a predetermined condition, by a well-known pressure sintering (Hot Press) method, to a predetermined shape, for example, focusing ring 13 or shield. A molded article having a shape substantially corresponding to the ring 41 or the like is manufactured (S102), and thereafter, Machining such as cutting is performed (S103), followed by degreasing and pure water washing (S104). At the time of the above-mentioned machining, anneal treatment of heating at a temperature of 280 ° C. to 300 ° C. for 2 to 4 hours was performed twice, and then at a temperature of 340 ° C. to 360 ° C. It is preferable to perform the annealing process once for 2 to 4 hours.

 Hereinafter, the results of the verification test of the above-mentioned annealing temperature will be described.

 In the verification test of the temperature of the nitrile treatment, a sample A of cerazole subjected to annealing for three hours at 290 ° C for three hours and an annealing treatment for three hours at 290 ° C were used. The cerazole sample B that had been subjected to the annealing treatment once, which was heated twice at 350 ° C. for 3 hours, was heated at 120 ° C. or 350 ° C. for 30 minutes, respectively. The gas gas components generated at that time are measured, and the results are shown in Table 1.

table 1

As is evident from Table 1, when heated at 350 ° C for 30 minutes, 1 μg of sample A generated 44 μg of phthalic anhydride and 17 μg of isobutyl alcohol. In contrast, 1 g of sample B produced only 5 g of phthalic anhydride and 1 μ of isobutyl alcohol.

Thus, Sample B contains phthalic anhydride and isobutyl alcohol. Only a small amount of impurities such as cerazole, that is, the effect of removing impurities in cerazole by performing once annealing treatment at 350 X: for 3 hours .

 In order to avoid subsequent cracking of the parts, re-evacuate at a pressure of 5,320 Pa (40 Torr) and a temperature of 200: 250 for 2 to 4 hours. Drying was applied (S105). As a result, it is possible to manufacture a PBI resin component in a chamber formed into a desired shape and having a water content of not more than 3700 ppm.

 The water content was measured by high-precision temperature-separated gas analysis.

 FIG. 5 is a characteristic diagram showing the change over time of the BTM (bottom) dimension of the etching groove. FIG. 5 (a) shows that the PBI resin in which the water content was suppressed to 700 ppm was used. (B) shows the case where a PBI resin having a water content of 224 ppm was used, respectively.

 In addition, the BTM (bottom) of the etching groove is different between the case where the PBI resin whose moisture content is suppressed to 370 ppm and the case where the PBI resin whose moisture content is 224 ppm are used. ) The dimensional variation and the change over time were compared. This indicates that when the water content of the PBI resin is suppressed, the variation in the BTM (bottom) dimension of the etching groove and the change with time can be suppressed.

 The cleaning process after machining is performed as follows.

 The molded product after machining is subjected to degreasing and pure water washing to remove heavy metals adhering to the surface with hydrofluoric acid, and then to pure water washing and ultrasonic cleaning, and then to natural polymer material. Polishing (polishing) the surface to remove solid fine particles on the surface, followed by high-pressure cleaning and ultrapure water cleaning, and then cleaning after machining. I have.

As described above, according to the first embodiment of the present invention, exposure to a plasma atmosphere is performed. The components inside the chamber are made of dried PBI resin, so the plasma resistance is higher than those made of quartz, PI resin and PAI resin. The durability of the product is improved, the frequency of component replacement is reduced, and productivity can be improved.

 In addition, since the PBI resin is dried, no moisture adheres to the semiconductor product, so that there is no need to perform an extra dummy operation, and the usability is not impaired.

 In addition, because PBI resin has excellent adhesion, even if solid fine particles of the reaction product generated by reacting with the processing gas are scattered in the plasma atmosphere, they are easily adsorbed on the PBI chamber components. Therefore, it is possible to prevent solid fine particles from being deposited on the semiconductor product.

 Hereinafter, a second embodiment of the present invention will be described.

 In the second embodiment of the present invention, the apparatus main body 1 is detachably mounted on an alumite-treated outer wall 1a made of A1 and over the entire inner peripheral surface of the outer wall 1a. The inner wall 1b is formed of a sintered ceramic material containing no aluminum component, that is, an aluminum-less sintered ceramic material. As a result, even if the inner wall portion 1b is shaved by the plasma, the semiconductor wafer 3, which is the object to be processed, is not contaminated by A1, and the product yield is improved.

 In the above-described plasma processing apparatus, the focus ring 13 exposed to the plasma atmosphere, the insulator ring 40, the electrode protection member 8, the notch plate 12 and the first and second plates are provided. The components inside the chamber such as the rose covers 14 and 15 are arranged at predetermined positions. However, in the second embodiment of the present invention, the components inside the chamber are also made of an aluminum-less sintered ceramic. It is formed of a box material.

Is an Aluminum-less sintering Sera Mi click scan materials, for _{example, S i 3 N 4, Y} 2 0 3, S i C 1 kind of material or two or more composite material mainly use the Sa It is.

Further, the prior art by Ri as a tea Nba in parts of the component materials are widely used. S i 0 ₂ material, order to adhere to the large amount of debris is the surface generated during machining, the long Since it is necessary to perform a dummy operation and has poor plasma resistance, the frequency of replacement is high and productivity is low.

Therefore, in the present embodiment, S i 0 ₂ excellent plasma resistance as compared with, moreover machining debris generated during even rather small compared to S i 0 _2, was but One with dummy operation also short the kinds of materials requires time, i.e. _{S i 3 N 4, Y 2} 0 3, S i C 1 kind of material or two or more composite material mainly composed of, preferred and rather is tempered aid and Les Te Lee A material to which at least one of tribium (Yb) and yttrium (Y) is added is used.

According to the experimental results of the present inventors, it was found that the above-described chamber inner part (plasma-resistant part) was formed of the above-described aluminum-less sintered ceramic material similarly to the inner wall part 1b. also, Ri Do clear that the this that can have a this micromachining a connexion semiconductor wafer 3 also in Chiya Nba parts S i 〇 If formed by _two material substantially equal Etchingu speed, therefore, the desired edge It is also possible to secure the switching speed.

 Note that these aluminum-less ceramic materials having excellent plasma resistance are obtained by a normal pressure sintering method, a pressure sintering method (Hot Press) method, or an isotropic pressure sintering method (Hot Isostatic Press method). Needless to say, it can be easily formed into a predetermined shape using a well-known sintering method.

 As described above, in the second embodiment of the present invention, since the inner wall portion 1b is formed of an aluminum-less sintered ceramic material, the semiconductor wafer 3 to be processed is formed of A 1 Contamination can be avoided, and product yield can be improved.

Furthermore, the components inside the chamber arranged inside the main body 1 also As with b, superior S i ₃ N There Y ₂ 0 _3, S i aluminum-less sintering Serra a C like as a main component Mi click scan material plasma resistance, and rather is a sintering aid like Since it is made of aluminum-less sintered ceramics material to which at least one of yttrium and yttrium is added, a conventional method is used. compared with the case of using the S i 0 ₂ material can and this shorten spoon the time required for the dummy operation, therefore if the switch catcher Nba in part formed by S i 0 ₂ and the etching rate substantially equal Thus, it is possible to improve productivity while ensuring the reliability, and it is also possible to improve the plasma resistance, that is, the durability of the parts.

_{S i 3 N 4, Y 2} 0 3, Ri by the and S i C such child using aluminum-less sintering Sera Mi Tsu box member family consisting mainly of, probability for A 1 contamination cormorants I described above Although it can actually be avoided, commercial products of these aluminum-less sintered ceramic materials may contain Fe components as impurities, so metals other than A1 contamination Fe contamination may occur as contamination. However, such Fe contamination can be easily eliminated by reducing the Fe content.

 In the above embodiment, a magnetic field assist type plasma etching apparatus in which permanent magnets 26 are arranged on the outer periphery of the apparatus main body 1 has been described as an example, but other methods, for example, permanent magnets 26 are provided. Instead, the same can be applied to an ion-assist type plasma etching apparatus in which high-frequency power is applied to both the upper electrode 16 and the lower electrode 2 to generate plasma. Needless to say.

 Hereinafter, a third embodiment of the present invention will be described with reference to FIG.

FIG. 11 is a schematic view showing a method of manufacturing a component material of a plasma processing apparatus according to the third embodiment. In the third embodiment of the present invention, the component material for a plasma processing apparatus is manufactured by an oxyhydrogen melting method.

Specifically, plasma resistance excellent given different materials H ₂ and 0 ₂ co natural crystal powder 1 0 1 (hereinafter, S i 0 ₂ powder 1 0 1) was added, mixed can 1 0 It is mixed with S i 0 ₂ powder 1 0 1 and different materials in two. As a result, a mixture 103 is obtained. Next, the mixture 103 is melted under a predetermined high-temperature gas atmosphere 104 (for example, 200 ° C.), and the melted mixture 103 is rotated in the direction of arrow A. They are laminated on a case 105 and then naturally cooled to produce a bulk component material 106.

In the third embodiment of this good earthenware pots, S i 0 ₂ powder 1 0 Mixture 1 0 3 obtained by adding a predetermined different materials in 1, hot Ri by the oxyhydrogen melting method of a gas fusion method gas atmosphere 1 0 4 is melted under, different materials manufactures component material 1 0 6 were uniformly mixed in S i 0 ₂ This ensures.

Is the above predetermined different materials, plasma resistance excellent material, specifically, such as Y ₂ 0 ₃ rare earth compound or a, S i C and S i ₃ of N _4, such as S i 0 ₂ other than Kei-containing compounds, a 1 ₂ 0 aluminum Niu beam compounds such _3, or Y ₂ a, ₅ 0 ₁₂ (I Tsu Application Benefits U arm one aluminum - Gane Tsu DOO; YAG) rare earth compounds such as aluminum A reaction product with a nickel compound can be used.

Further, in the third embodiment, the content of the above-mentioned different material with respect to SiO ₂ is set to 1 wt% to 5 wt%.

 Here, the content of the above-mentioned heterogeneous material is set to 1 wt% to 5 wt% because, when the content of the above-mentioned heterogeneous material is less than 1 wt%, the content of the heterogeneous material is too small and the plasma resistance On the other hand, even if the content of different materials exceeds 5 wt%, the plasma resistance becomes saturated, and the effect of adding different materials cannot be obtained. It is.

As described above, in the third embodiment, the plasma resistance of a rare earth compound or the like is high. Since addition of superior predetermined different materials uniformly S i 0 ₂ powder 1 0 in 1 in an oxyhydrogen melting method (mixing) is to manufactures component material 1 0 6, using parts materials 1 0 6 Of plasma processing equipment (sealing rings 41, focusing rings 13, insulating rings, etc.) manufactured by using this method has improved plasma resistance, and the frequency of replacement of equipment parts has been improved compared to the past. And the productivity of semiconductor manufacturing can be improved.

Example

 Next, examples of the present invention will be described specifically.

 Hereinafter, a first example corresponding to the first embodiment of the present invention will be described.

 [First embodiment]

 In the present example, the present inventors found that two types of PBI (PBI-A, PBI-B) were used as PBI materials, and three types of PIs (PI_A, PI-B, PI—C), one type of PAI (PAI-A) was used as the PAI material, and each of these materials was used to measure a length of 20 mm, a width of 20 mm, and a thickness of 2 mm. Test pieces were prepared. Then, as shown in Fig. 2, the outer peripheral portion 30 of each test piece was masked with polyimide film (DuPont, registered trademark "Pyton") and the central portion 31 was formed. An irradiation surface of 10 mm in length and 10 mm in width is provided, plasma is irradiated for 20 hours under the following discharge conditions, and the amount of shaving in the X-axis direction and Y-axis direction is measured by a surface roughness meter. ) Was measured, and the plasma resistance was evaluated.

 (Discharge conditions)

 High frequency power: 1300 W

 Power supply frequency: 1 3.56 MHz

 Processing chamber pressure: 1 3 3 Pa (1.0 Torr)

Processing gas component: CF ₄ / A r / 0 ₂ FIG. 3 is a bar graph showing the measurement results, in which the abscissa indicates the material of each test piece and the ordinate indicates the shaving amount (m) after 20 hours.

 As is clear from FIG. 3, the PBI material consumes less than the PI material and the PAI material, and has excellent plasma resistance.

 Hereinafter, a second example corresponding to the second embodiment of the present invention will be described.

 [Second embodiment]

The present inventors first used the S i N ₄ material mainly composed of S i ₃ N ₄ as an embodiment, S i 0 mainly composed of S i 0 ₂ and Comparative Example _{Using two} materials, an insulator ring 40 having an approximate diameter of 23 Oram, an outer diameter of 280 mm, and a total height of 15 mm was manufactured.

 Next, the insulating ring 40 is disposed at a predetermined position in the processing chamber 22, and the 8-inch (203.2 mm) semiconductor wafer 3 is placed on the electrostatic chuck 4. Then, plasma irradiation was performed by generating a glow discharge under predetermined discharge conditions, and the number of solid fine particles before and after plasma irradiation was measured. Specifically, since the crushed debris is adhered to the surface of the insulator ring 40 by machining, five semiconductor wafers 3 are used to remove the crushed debris. Then, a dummy operation is performed for 1 minute each, for a total of 5 minutes.After that, a new semiconductor wafer 3 is sucked and held on the electrostatic chuck 4 and plasma irradiation is performed for 30 seconds, and before and after the plasma irradiation. The number of solid fine particles was measured with KLA—Tencor Surfscan6420.

 The discharge conditions are as follows.

 (Discharge conditions)

 High frequency power: 150 W

 Power supply frequency: 1 3.56 MHz

Processing chamber pressure: 5.32 Pa (4.0 X 10 -2 Torr) Reactive gas _{species: C 4 F 8 / C 0} / A r / 0 2

 Table 2 shows the number of solid particles adhered on the semiconductor wafer 3 before and after the test.

Table 2

As is evident from Table 2, in the comparative example, the S i 0 ₂ material showed an increase in solid fine particles of 0.2 _μm or more by 115 before and after plasma irradiation. ₃ in the N ₄ material not increased only nine.

That is, since a large amount of crushed debris adheres to the surface of the SiO ₂ material, a dummy operation of about 5 minutes is not sufficient, and a long-time dummy operation is required. I understand.

On the other hand, in the case of Si ₃ N ₄ material, the amount of crushed debris adhering to its surface is small, so it is possible to remove the crushed debris adhering to the surface in a short damp operation. However, it was confirmed that it was possible to promptly shift to the main operation for performing microfabrication of semiconductor wafer 3.

Hereinafter, a third example corresponding to the second embodiment of the present invention will be described. I will tell.

 [Third embodiment]

Next, we use the Y ₂ 0 ₃ material in the present invention example was composed mainly of Y ₂ 0 _3, mainly composed of A 1 ₂ 0 3 and Comparative Example A by using the 1 ₂ 0 ₃ material, to produce a second embodiment similar to Lee Nshiyu les Isseki-ring 4 0. Then, one each minute using five dummy Weha for Y ₂ 0 ₃ material (the present invention real施例) I in the same discharge conditions as in the second embodiment, dummy between five minutes performs the operation, Alpha 1 ₂ 0 for ₃ material (Comparative example) by each 3 minutes using a 2 five dummy one wafer performs dummy one operation of seven 5 minutes, Later, 1 0 0 A time running test was performed, and a change with time of the number of solid fine particles having a diameter of 0.2 m or more fixed on the semiconductor wafer 3 was measured.

FIG. 6 is a characteristic diagram showing the measurement results, in which the horizontal axis represents the application time (hr) of the high-frequency power, and the vertical axis represents the number of solid fine particles having a diameter of not less than 0.1 μm. Also, in the figure, the solid line a generation number of the solid particles of Y ₂ 0 ₃ material is present invention embodiment shows, dashed line shows the number of generated solid particulates of A 1 ₂ 0 ₃ material is a comparative example I have.

 As is clear from FIG. 6, the number of the solid fine particles rapidly increased after the application time of about 25 hours in the comparative example, whereas the solid fine particles in the example of the present invention were increased. It is clear that outbreaks have stabilized at low levels.o

That is, the A 1 F 3 reacts A 1 ₂ 0 ₃ is a C ₄ F ₈ gas in the comparative example and generate, the A 1 F ₃ scatters the plasma atmosphere becomes solid particulates, the Re this Thus, it is presumed that the solid fine particles adhere to the semiconductor wafer 3.

Point in the Y ₂ 0 ₃ material is present invention embodiment In contrast, the occurrence of fine solid particles stabilized at low levels of anything occurs, the application time has exceeded the 1 0 0 hour However, since only about 40 solid particles were generated, it was confirmed that the generation of solid particles was small.

 Hereinafter, a fourth example corresponding to the second embodiment of the present invention will be described.

 [Fourth embodiment]

Then, the present inventors, S i C as an embodiment, the _{Y 2 0 3, S i 3} N 4, and the ratio Comparative Examples A 1 ₂ 0 _3, the material of the S i 0 ₂ , 20 mm in length, 20 mm in width, and 2 mm in thickness were prepared. As shown in Fig. 2, the outer periphery 30 of each test piece was made of polyimide film (DuPont, Inc.). (Registered trademark “Kabton”)), and an irradiation surface of 10 mm in length and 10 mm in width is provided in the center 31, and plasma is applied under the same discharge conditions as in the second embodiment. Irradiation was performed for 0 hour, and the amount of wear (consumed amount) in the X-axis direction and the Y-axis direction was measured with a surface roughness meter.

 FIG. 7 is a bar graph showing the measurement results. The horizontal axis shows each ceramic material, and the vertical axis shows the amount of shaving (m) after 20 hours.

The power sale by clear from the FIG. 7, S i ₃ N ₄ material, Y ₂ 0 ₃ material, this S i C material is superior rather small, the amount of abrasion compared to S i 0 ₂ material, the plasma resistance It turns out that.

Incidentally, the A 1 ₂ 0 ₃ material have been excellent in plasma resistance even as compared with the S i ₃ N ₄ material Ya S i C material, earthenware pots by apparent from the experimental results of the second embodiment, since the solid particles a 1 ₂ 0 ₃ consists of a 1 F ₃ reacts with C ₄ F ₈ gas is generated, not suitable for part materials for flops plasma processing apparatus.

 Hereinafter, a fifth example corresponding to the second embodiment of the present invention will be described.

 [Fifth embodiment]

Next, the present inventors used the Si ₃ N ₄ material as the present example, and used the SiO ₂ material as a comparative example. Letter The etching rates were compared under the above-mentioned discharge conditions.

Figure 8 is shows the measurement results of the S i ₃ N ₄ material, Figure 9 shows the measurement results of the S i 0 ₂ material. 8 and 9, the horizontal axis represents the wafer diameter (mm) of the semiconductor wafer, and the vertical axis represents the etching speed (nm / min). The measurement was performed on the XY plane of the semiconductor wafer in both the X-axis direction and the Y-axis direction.

The etching speed of the Si ₃ N ₄ material shown in FIG. 8 is 3.1% at 3.4 nm / min, and the etching speed of the Si 0 ₂ material shown in FIG. 9 is 302 nm / min. % and Do Ri, even when used in the S i ₃ N ₄ material as plasma resistance component (Cha Nba in part), it is the this to secure substantially the same etching performance as si 0 ₂ material Was confirmed.

 Hereinafter, a sixth example corresponding to the second embodiment of the present invention will be described.

 (Sixth embodiment)

Next, the present inventors set the purity of Si ₃ N ₄ obtained by adding yttrium and yttrium to Si ₃ N ₄ as a sintering aid in this example. There 80% of _{S i 3 N 4 - a,} S i 3 i in the N ₄ and a sintering aid tree Application Benefits Piumu及Pi Lee Tsu S i ₃ N ₄ purity Application Benefits © beam was pressurized Introduction 9 1% S i ₃ N ₄ - B, and S i ₃ N ₄ to S i ₃ N ₄ purity plus b tree Application Benefits um as a sintering aid is _{9 8% S i 3 N 4} - C, and as Comparative example S i ₃ N ₄ to S i ₃ N ₄ purity plus magnesium as a sintering aid of _{9 9. 5% S i 3 N} 4 - D, and the Q uartz, A 20 mm long, 20 mm wide, and 2 mm thick test piece was prepared. As shown in Fig. 2, the outer periphery 30 of each test piece was made of polyimide film (DuPont, Inc.). (Registered trademark “Pyton”)), an irradiation surface of 10 mm in length and 10 mm in width is provided in the center 31, and the projection is performed under the following discharge conditions. Zuma were irradiated 2 0 hours, scraping amount of X-axis and Y-axis directions by the surface roughness meter (consumption) was measured. (Discharge conditions)

 High frequency power: 140 W

 Power frequency. Number: 1 3.5 6 MHz

Pressure in the processing chamber: 5. 3 2 P a (4. 0 X 1 0- 2 Torr) - reactive gas _{species:: CF 4 / A r /} 0 2

 Fig. 10 is a bar graph showing the measurement results.The horizontal axis shows each ceramic material, and the vertical axis shows the amount of shaving 20 hours after Quartz was 100. Shows the amount of scraping.

The power sale by clear from the first 0 Figure, S i ₃ N ₄ as a sintering aid Lee Tsu Application Benefits Biumu and I Tsu preparative S i ₃ N ₄ was added Li Umm - A and S i ₃ N ₄ - cutting is the amount of B is Ri about 1/3 der the scraping amount of Q uartz, S i ₃ N ₄ was added magnesium as a sintering aid to the S i ₃ N ₄ - scraping of the D Less than quantity.

Also, S i ₃ N ₄ was added Lee Tsu Application Benefits um as a sintering aid to the S i ₃ N ₄ - scraping amount of C is Ri about 6 Waridea the scraping amount of Q uartz, S _{i 3 N 4 S i 3 N} 4 was added magnesium as a sintering agent - small Ri by abrasion amount of D.

Ri by the above results, the scraping amount does not depend on S i ₃ N ₄ purity by the this adding dry燥助agent S i ₃ N _4, scraping amount Ri is Do rather small, also drying aid Thus, it is found that it is appropriate to use at least one of yttrium and yttrium. Industrial applicability

As described above in detail in the first embodiment, since the components for the plasma processing apparatus according to the present invention are formed of dried polybenzoimidazole (PBI), quartz and PI The plasma resistance is improved compared to conventional products made of resin and PAI resin, and therefore the durability of the components inside the chamber can be improved, thereby extending the maintenance cycle. Can, The frequency of parts replacement is also reduced.

 In addition, since the components for the plasma processing apparatus according to the present invention are formed of dried polybenzoimidabour, moisture does not adhere to products such as semiconductor devices, and therefore, unnecessary waste operation There is no need to do this.

 In addition, the method for manufacturing a part for a plasma processing apparatus according to the present invention is characterized in that after performing a vacuum drying process on a polybenzomidazole powder, a molding process is performed on the vacuum-dried powder to form a molded product having a predetermined shape. Because of this, it is possible to easily manufacture parts for plasma processing equipment that excel in plasma resistance and remove water absorption. Therefore, the BTM (bottom) portion of the etching groove can be manufactured. Variations in dimensions and changes over time can be suppressed.

 Furthermore, by subjecting the molded article to vacuum drying again at a second drying processing temperature higher than the first drying processing temperature set in the vacuum drying processing, cracks in the molded article can be prevented. Can be avoided.

 In addition, in the plasma processing apparatus according to the present invention, since the components disposed inside the apparatus main body and exposed to the plasma atmosphere are formed of a dry-processed polybenzimidazole, the components are The plasma resistance of these components is improved, and therefore the durability of these components is also improved. As a result, the frequency of component replacement is reduced, and the productivity of products such as semiconductor devices can be improved.

In addition, as described in detail in the second embodiment, the plasma processing apparatus according to the present invention includes an inner wall of the apparatus main body and components exposed to a plasma atmosphere provided inside the processing chamber. Are made of sintered ceramic materials that do not contain aluminum components, so that impurities such as A1F3 adhere to the surface of semiconductor products and cause A1 contamination. Can be avoided, and the product yield can be improved. In addition, the sintered ceramic material may be composed of one or more materials selected from materials containing silicon nitride, yttrium oxide, or silicon carbide as a main component. Since it is composed of one or more selected from the above, so-called dummy operation can be shortened and productivity can be improved. Moreover, the frequency of these sintered Yuise La Mi click material also enabling high- also improve durability because of its excellent in耐Pu plasma resistance as compared with quartz (S i 0 _2), and wanted to replace parts And maintainability is improved.

 Since these sintered ceramic materials contain at least one of yttrium beam and yttrium as a sintering aid, they are resistant to sintering. The plasma properties can be further improved, and the durability can be further improved.

 Further, as described in detail in the third embodiment, the plasma processing device component according to the present invention is a plasma processing device used for an insulating component disposed inside a device main body of a plasma processing device. Since it is a component for equipment that contains silicon oxide as a main component and is added with a predetermined dissimilar material other than the silicon oxide, it has plasma resistance as a predetermined dissimilar material. By selecting an excellent material, it is possible to manufacture a component for a plasma processing apparatus having an excellent plasma resistance, thereby improving the durability of the component and improving the semiconductor performance. Production productivity can be improved.

Further, the method for manufacturing a component for a plasma processing apparatus according to the present invention is a method for manufacturing a component for a plasma processing apparatus used for an insulating component disposed inside an apparatus body of the plasma processing apparatus, comprising: Since a predetermined heterogeneous material other than silicon oxide is added to the material, the silicon oxide and the heterogeneous material are melted in an oxyhydrogen flame, and then cooled to manufacture parts for a plasma processing apparatus. The elemental oxide and the dissimilar material can be surely and uniformly mixed, and a desired component for a plasma processing apparatus having excellent plasma resistance can be obtained. Wear.

 In addition, since the different materials are selected from rare earth compounds, silicon compounds other than the above silicon oxides, and substances containing one or more selected from aluminum compounds, In addition, the plasma resistance described above can be easily improved.

Claims

The scope of the claims

1. A component for a plasma processing apparatus, which is provided inside the apparatus main body of the plasma processing apparatus and is formed of dried polybenzimidazole.

 2. A plasma processing apparatus, comprising: subjecting a powder of polybenzoimidazole to a vacuum drying treatment, and then applying a molding treatment to the powder subjected to the vacuum drying treatment to produce a molded article having a predetermined shape. Manufacturing method for parts.

 3. The molded article is subjected to vacuum drying processing again at a second drying processing temperature higher than a first drying processing temperature set in the vacuum drying processing, wherein the molded article is subjected to vacuum drying processing. A method for manufacturing a part for a plasma processing apparatus.

 4. The component for a plasma processing apparatus according to claim 2 or 3, wherein the vacuum drying treatment is performed at a temperature of 140 ° C to 180 ° C for 5 to 7 hours. Production method.

5. At the time of machining after the above-mentioned forming process, 2 to 4 hours at a temperature of 280 ° C. to 300 ° C. First annealing and 340 t: at a temperature of up to 360 ° C. The method for producing a component for a plasma processing apparatus according to any one of claims 2 to 4, wherein a second annealing process is performed for 2 to 4 hours.

6. The component for a plasma processing apparatus according to claim 5, wherein after performing the first file processing twice, the second file processing is performed once. Manufacturing method.

 7. A vacuum drying process, which is performed at a temperature of 200 t: to 250 ° C. for 2 to 4 hours after performing a washing process after the machining process. 7. The method for producing a part for a plasma processing apparatus according to any one of paragraphs 6.

8. In a plasma processing apparatus that excites plasma inside the apparatus main body to finely process the surface of an object to be processed, the plasma processing apparatus is disposed inside the apparatus main body, A plasma processing apparatus, characterized in that the parts exposed to the atmosphere are made of a dried polyvinylbenzene.

 9. The plasma processing apparatus according to claim 8, wherein the moisture content of the dried polybenzomidabour is not more than 370 ppm.

 10. Polyvinyl midazole, which is used as a component of a plasma processing apparatus installed inside the main body of the plasma processing apparatus and has been dried to a moisture content of less than 370 ppm.

 1 1. In a plasma processing apparatus that excites plasma inside the apparatus main body to finely process the surface of an object to be processed, the inner wall of the apparatus main body and components exposed to the plasma atmosphere provided inside the apparatus main body. A plasma processing apparatus characterized in that the components are formed of a sintered ceramic material that does not contain aluminum components.

 12. The sintered ceramic material is constituted by selecting one or more materials from a material having silicon nitride, yttrium oxide or silicon carbide as a main component. The plasma processing apparatus according to claim 11, wherein:

 13. The plasma processing apparatus according to claim 11 or 12, wherein a sintering aid is added to the sintered ceramic material.

14. The plasma processing apparatus according to claim 13, wherein the sintering aid is at least one of yttrium and yttrium. .

 1 5. A part for the plasma processing device disposed inside the device body of the plasma processing device, characterized by being formed of a sintered ceramic material containing no aluminum component. For plasma processing equipment.

1 6. The sintered ceramic material may be silicon nitride, titanium oxide, or 16. The component for a plasma processing apparatus according to claim 15, wherein one or more types are selected from a material mainly containing silicon carbide.

 17. The component for a plasma processing apparatus according to claim 15 or 16, wherein a sintering aid is added to said sintered ceramic material.

18. The sintering aid according to claim 17, wherein the sintering aid is at least one of yttrium or yttrium. Parts for plasma processing equipment.

 19. Manufacturing method of plasma processing equipment parts installed inside the plasma processing equipment main body, which is a sintered ceramics material that does not contain aluminum component for plasma processing equipment. A method for producing a part for a plasma processing apparatus, comprising forming a part.

 20. The sintered ceramic material is constituted by selecting one or more materials from a material mainly composed of silicon nitride, yttrium oxide, or silicon carbide. 10. The method for manufacturing a part for a plasma processing apparatus according to claim 19, wherein the method is performed.

 21. The method for manufacturing a component for a plasma processing apparatus according to claim 19, wherein a sintering aid is added to the sintered ceramic material.

22. The plasma according to claim 21, wherein said sintering aid is at least one of it and lithium. Manufacturing method of parts for processing equipment.

23. A part for a plasma processing apparatus used for an insulating part disposed inside the apparatus body of the plasma processing apparatus, wherein the silicon oxide is contained as a main component and the silicon oxide is used. A part for a plasma processing apparatus, wherein a predetermined different material other than the above is added.

24. The different material described in (f) above includes one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and a 7-luminium compound. The part for a plasma processing apparatus according to claim 23, wherein

25. A method of manufacturing a part for a plasma processing apparatus used for an insulating part disposed inside a main body of a plasma processing apparatus, wherein the silicon oxide includes a predetermined heterogeneous material other than the silicon oxide. A method of manufacturing a component for a plasma processing apparatus, comprising: melting the silicon oxide and the dissimilar material in an oxyhydrogen flame, and then cooling the material to produce a component material.

26. The predetermined heterogeneous material includes one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound. 26. The method for producing a part for a plasma processing apparatus according to item 25.

 27. In a plasma processing apparatus that excites plasma inside the apparatus main body to finely process the surface of an object to be processed, components for a plasma processing apparatus used for insulating parts disposed inside the apparatus main body are used. A plasma processing apparatus comprising: a silicon oxide as a main component; and a predetermined different material other than the silicon oxide.

 28. The method according to claim 28, wherein the predetermined heterogeneous material includes one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound. Item 28. The plasma processing apparatus according to Item 27.