WO2002067312A1 - Pieces d'un appareil de traitement au plasma, leur procede de fabrication et appareil de traitement au plasma - Google Patents

Pieces d'un appareil de traitement au plasma, leur procede de fabrication et appareil de traitement au plasma Download PDF

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Publication number
WO2002067312A1
WO2002067312A1 PCT/JP2002/001527 JP0201527W WO02067312A1 WO 2002067312 A1 WO2002067312 A1 WO 2002067312A1 JP 0201527 W JP0201527 W JP 0201527W WO 02067312 A1 WO02067312 A1 WO 02067312A1
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Prior art keywords
plasma processing
processing apparatus
plasma
component
main body
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PCT/JP2002/001527
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English (en)
Japanese (ja)
Inventor
Kosuke Imafuku
Nobuyuki Nagayama
Kouji Mitsuhashi
Hiroyuki Nakayama
Tsuyoshi Hida
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Tokyo Electron Limited
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Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2002566540A priority Critical patent/JP4021325B2/ja
Publication of WO2002067312A1 publication Critical patent/WO2002067312A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Definitions

  • the present invention relates to a component for a plasma processing apparatus, a method for manufacturing the same, and a plasma processing apparatus.
  • a plasma etching apparatus is used to perform an etching process on a workpiece such as a semiconductor wafer and perform desired fine processing on the surface of the workpiece. Is being applied.
  • an upper electrode and a lower electrode are disposed opposite to each other in an airtight apparatus main body, and high-frequency power is applied to the lower electrode on which an object to be processed is placed, so that the lower electrode and the upper electrode And a glow discharge is generated between them.
  • the processing gas supplied into the processing chamber is turned into plasma by the glow discharge, and the workpiece is etched.
  • a CF (fluorocarbon) -based gas has been widely used.
  • the apparatus main body Arumai bets treated A 1 (Aluminum Niu beam) metal is used as the base material, A 1 2 0 3 which is sintered (Aluminum Na)
  • a ceramics member is detachably mounted over the entire inner peripheral surface of the apparatus main body.
  • the conventional plasma edge quenching apparatus comprised of a outer wall portion of the apparatus made body A 1, A 1 2 0 3 that is detachably attached to the inner peripheral surface of the outer wall (alumina) Seise la mission-box member
  • the inner wall of the main unit is cut and damaged by plasma, it can be treated by replacing only the inner wall. Processing of the physical material can be resumed.
  • a focusing ring, a baffle plate, and a like are used in order to effectively confine plasma between an upper electrode and a lower electrode and perform a desired etching process on an object to be processed.
  • Parts such as seal drilling (hereinafter referred to as “parts in chamber”), that is, device parts are arranged at predetermined positions around the upper electrode and the lower electrode.
  • the tea Nba first internal product has a dielectric constant is required for 1 0 less insulation performance, Ri by conventional, quartz (S i 0 2), or poly Lee Mi-de (PI) based or poly A Mi Doi mi de ( PAI) -based resin material.
  • tea Nba in part this and many S i 0 2 material used as a component material of the amount is large adhesion to debris of component surfaces which occurs during machining.
  • the crushed particles become solid fine particles, scatter in the plasma atmosphere, and adhere to the surface of the workpiece.
  • the number of solid fine particles adhering to the object to be processed is within the allowable range (for example, the number of solid fine particles having a particle diameter of 0.2 m or more is within 30).
  • Dump operation is performed using the object to be processed. Then, after the dummy operation, a new workpiece is subjected to a dry etching treatment to obtain a desired microfabricated semiconductor product.
  • 1 a pressure is A 1 a vapor pressure of F 3 (room temperature 2 0 ° C for Ri by the low pressurization ⁇ Pi high power of the processing chamber due to microfabrication of the object to be processed the processing chamber (Cha Nba).
  • 6 X 1 0 - 4 approaches P a) a 1 F 3 becomes solid fine particles.
  • the solid fine particles of A 1 F 3 drop off from the inner wall and the components arranged in the apparatus main body and are scattered in the plasma atmosphere.
  • the scattered solid particles of A 1 F 3 adhere to the surface of the object to be treated, causing A 1 contamination, which is a kind of metal contamination, and lowering the product yield.
  • Et al is, when using the S i 0 2 material as a tea Nba in part, to attach a large amount of debris on the surface of the S i 0 2 material, the number of solid particles scatter a plasma atmosphere There was a problem that long-time dust operation had to be performed until the allowable range was reached.
  • An object of the present invention is to provide a part for a plasma processing apparatus capable of extending a cycle, a method for manufacturing the same, and a plasma processing apparatus.
  • An object is to provide a component for a plasma processing apparatus, a method for manufacturing the same, and a plasma processing apparatus. Disclosure of the invention
  • the present inventors have developed a material for a plasma processing apparatus component having excellent plasma resistance.
  • polybenzimidazole hereinafter referred to as “PBI”
  • PBI polybenzimidazole
  • the plasma processing device component according to the present invention is a plasma processing device component disposed inside the device main body of the plasma processing device, and is characterized by being formed of PBI that has been subjected to a drying process. are doing.
  • the parts for the plasma processing apparatus are formed of the PBI that has been subjected to the drying treatment, so that the plasma resistance of the parts can be improved and the product can be manufactured without performing the dummy operation. Water adhesion can be avoided.
  • the method for manufacturing a part for a plasma processing apparatus includes a step of performing a vacuum drying process on the powder of the present invention, and then subjecting the powder subjected to the vacuum drying process to a molding process to form a predetermined shape. It is characterized by manufacturing molded articles.
  • the PBI powder is subjected to vacuum drying and then molded, so that a desired PBI part can be easily obtained.
  • the second drying treatment is performed at a temperature higher than the first drying treatment temperature set in the vacuum drying treatment. It is preferred that the molded article be vacuum dried again at the processing temperature.
  • the vacuum drying treatment is preferably performed at a temperature of 140 ° C. to 180 ° C. for 5 to 7 hours.
  • the first annealing and the third annealing performed at a temperature of 280 ° C. to 300 ° C. for 2 to 4 hours during the mechanical processing after the forming process are performed. It is preferable to perform a second annealing treatment at a temperature of 40 ° C. to 360 ° C. for 2 to 4 hours.
  • the second annealing process is performed once.
  • a vacuum drying treatment at a temperature of 200 ° C. to 250 ° C. for 2 to 4 hours after performing a cleaning treatment after machining.
  • a plasma processing apparatus is a plasma processing apparatus for exciting a plasma inside an apparatus main body to finely process a surface of an object to be processed.
  • the plasma processing apparatus is disposed inside the apparatus main body and exposed to a plasma atmosphere. It is characterized in that parts are made of PBI that has been dried.
  • the water absorption of the PBI due to the water absorption of the PBI does not occur.
  • Plasma resistance can be improved.
  • PBI has excellent adhesion, it is possible to minimize the accumulation of solid fine particles generated in the apparatus main body on the object to be processed.
  • the water content of the dried PBI is not more than 3700 ppm.
  • PBI is used for plasma processing equipment components installed inside the plasma processing equipment, and is characterized by being dried to a water content of less than or equal to 370 ppm.
  • the inventors of the present invention have conducted intensive studies to improve the durability and the productivity of the components provided in the plasma processing apparatus, and have found that the sintered ceramics containing no aluminum component.
  • S i 3 N 4 (nitride Ke i containing) as a main component
  • Y 2 0 3 consists of (oxide Lee Tsu Application Benefits um), or S i C (carbonization Kei-containing) material, 'or composite material containing two or more of these materials (e.g., S i 3 N 4 and S i C) Ri by the that you use, can trigger improve plasma resistance as compared to the S i 0 2,
  • ⁇ we can in this transgression to improve the productivity improvement This ensures that to shorten the time it takes to dummy operation as compared to the S i 0 2.
  • a plasma processing apparatus is a plasma processing apparatus that excites plasma inside an apparatus main body to finely process a surface of an object to be processed.
  • the plasma processing apparatus is disposed inside the apparatus main body and inside the apparatus main body. It is characterized in that parts exposed to the plasma atmosphere are formed of sintered ceramic materials that do not contain aluminum components.
  • the parts arranged in the inner wall of the apparatus main body and the inside of the apparatus main body, which are exposed to the atmosphere, are made of a sintered ceramic material containing no aluminum component. As a result, it is possible to prevent A1 contamination of the object to be treated, and to improve the product yield.
  • the plasma processing apparatus of the present invention the sintered Sera Mi click material, S i 3 N 4, Y 2 0 3, or one or more from among the material mainly composed of S i C Is selected.
  • sintered Sera Mi click material S i 3 N 4, Y 2 0 3, or by selecting one or more from among the material mainly composed of S i C Since it is configured, it is possible to reliably avoid A1 contamination of the object to be treated, to improve productivity, and to improve durability. .
  • a sintering aid is added to the sintered ceramic material.
  • the sintering aid is at least one of yttrium and / or yttrium.
  • the plasma processing apparatus component according to the present invention is a plasma processing apparatus component disposed inside the apparatus main body of the plasma processing apparatus, and is a sintered ceramic containing no aluminum component. It is characterized by being formed of a glass material.
  • the sintered ceramic material is one or two or more materials selected from the group consisting of silicon nitride, titanium oxide, and silicon carbide as main components. It is preferable to select and configure.
  • a sintering aid is added to the sintered ceramic material.
  • the sintering aid is at least one of yttrium and yttrium.
  • a method for manufacturing a component for a plasma processing apparatus is a method for manufacturing a component for a plasma processing apparatus disposed inside an apparatus body of the plasma processing apparatus, the method including an aluminum component. It is characterized in that parts for plasma processing equipment are formed from unsintered ceramic materials.
  • the sintered ceramic material may be one or more of materials containing silicon nitride, yttrium oxide, or silicon carbide as a main component. It is preferable to select two or more types.
  • a sintering aid to the sintered ceramic material.
  • the sintering aid is at least one of yttrium and yttrium.
  • the present inventors have conducted intensive research to find a part for a plasma processing apparatus that is more excellent in plasma resistance than a part for a plasma processing apparatus made of a silicon oxide.
  • the object different material, for example, rare earth compound (Y 2 0 3, etc.), Kei-containing compound excluding Kei-containing oxide (S i C, S i 3 N 4 , etc.), Aluminum Niu arm compound (a l 2 ⁇ 3, etc.), or two or more of these components contains a compound (Y 2 a, 5 0 12, etc.) and this which is added to obtain a finding that favored arbitrariness.
  • the component for a plasma processing apparatus is a component for a plasma processing apparatus used for an insulating component disposed inside the apparatus body of the plasma processing apparatus, and mainly includes a silicon oxide. It is characterized in that, in addition to being contained, a predetermined different material other than the silicon oxide is added.
  • the predetermined heterogeneous material is one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound. It is characterized by including.
  • an electric melting method and a gas melting method can be considered as a method of manufacturing the above-described plasma processing apparatus parts.
  • a gas melting method In order to uniformly mix the silicon oxide as the main component and the dissimilar material, it is preferable to use a gas melting method.
  • the method for manufacturing a component for a plasma processing apparatus relates to a plasma processing apparatus used for an insulating component disposed inside the apparatus body of the plasma processing apparatus.
  • a method of manufacturing a component for a treatment device comprising adding a specified different material other than the silicon oxide to a silicon oxide, and applying the specified silicon oxide and the different material under an oxyhydrogen flame. Is melted and then cooled to produce parts.
  • the parts are manufactured using the oxyhydrogen melting method as the gas melting method, so that the silicon oxide and the dissimilar material can be easily and uniformly mixed.
  • the silicon oxide and the dissimilar material can be easily and uniformly mixed.
  • the dissimilar material includes one or more selected from rare earth compounds, silicon compounds other than the silicon oxide, and aluminum compounds as described above. It is preferred that
  • the plasma processing apparatus is a plasma processing apparatus that excites plasma inside the apparatus main body to finely process a surface of an object to be processed, wherein the plasma processing apparatus is used for an insulating component disposed inside the apparatus main body.
  • the components for a plasma treatment apparatus to be used are characterized in that silicon oxide is contained as a main component and a predetermined different material other than the silicon oxide is added.
  • the predetermined different material preferably includes one or more selected from a rare earth compound, a silicon compound other than the silicon oxide, and an aluminum compound.
  • FIG. 1 is an internal structure diagram showing an embodiment of a plasma etching apparatus as a plasma processing apparatus according to the present invention
  • FIG. 2 is a diagram showing a method of measuring a shaving amount (abrasion amount).
  • FIG. 3 is a bar graph showing the evaluation results of the plasma resistance of each type of ceramic material in the first embodiment
  • Fig. 5 (a) is a characteristic diagram showing the change over time in the BTM (bottom) dimensions of the etching groove when using PBI resin whose water content was suppressed to 37 ppm.
  • Fig. 5 (b) is a characteristic diagram showing the change over time in the BTM (bottom) dimensions of the etching groove when using PBI resin with a water content of 222 ppm.
  • FIG. 6 is a characteristic diagram showing a change over time of solid fine particles fixed on a semiconductor wafer.
  • FIG. 7 is a graph showing plasma resistance of various ceramic materials in the second embodiment.
  • FIG. 8 is a bar graph showing the evaluation results of FIG. 8, and FIG. 8 is an etching characteristic diagram when Si 3 N 4 material is used as a focusing ring.
  • figure off O over Ri Kas Kinoe Tsu quenching characteristic diagram der and was used S i ⁇ 2 material as a-ring, first 0 figure your sixth real ⁇ FIG.
  • FIG. 11 is a bar graph showing the evaluation results of the plasma resistance of various ceramic materials, and
  • FIG. 11 is an object view showing a method of manufacturing a plasma processing equipment component material according to the third embodiment. is there.
  • FIG. 1 is an internal structure diagram showing an embodiment of a plasma etching apparatus as a plasma processing apparatus according to the present invention.
  • apparatus main body 1 In a processing chamber 22 in a plasma etching apparatus main body 1 (hereinafter, apparatus main body 1), a number of various components in a chamber formed in a predetermined shape are arranged at predetermined positions.
  • a lower electrode 2 made of a conductive material is provided in the apparatus main body 1.
  • An electrostatic chuck 4 is placed on the upper surface of the lower electrode 2 to adsorb and hold the semiconductor wafer 3 (workpiece), and an elevating shaft that can move up and down in the direction of arrow A is provided below the lower electrode 2.
  • the elevating shaft 5 is connected to a high-frequency power source 7 via a matching device 6.
  • the electrostatic chuck 4 has a ceramic sprayed film formed on an aluminum base material by a plasma spraying method. It is preferable to apply methyl methacrylate as an impregnating agent on the surface of the sprayed coating in order to seal the pores of the sprayed coating. By using methyl methacrylate as the impregnating agent, the pores on the surface of the film to be sprayed can be sufficiently closed to provide a desired space between the semiconductor wafer 3 and the electrostatic chuck 4. Thus, the heat transfer gas layer can be formed, whereby the temperature of the semiconductor wafer 3 can be stably controlled.
  • the bottom and side surfaces of the lower electrode 2 are covered and protected by an electrode protection member 8, and the side and bottom surfaces of the electrode protection member 8 are covered by a conductive member 9.
  • a telescopic bellows 10 formed of a conductive material such as stainless steel is attached between the inner bottom surface of the apparatus main body 1 and the inside.
  • a tubular member 11 made of a conductive material such as oxidized A1 is provided on the lower surface of the electrode protection member 8, and the elevating shaft 5 penetrates the tubular member 11.
  • a baffle plate 12 extending in the horizontal direction is fixed to the side surface of the electrode protection member 8, and a gap is formed between the upper end surface of the electrode protection member 8 and the side surface of the electrostatic chuck 4.
  • a focusing ring 13 and an indicator lettering 40 are provided.
  • a first bellows cover 14 extending downward is fixed to the lower surface of the notch plate 12, and a first bellows cover is attached to the inner bottom surface of the apparatus body 1.
  • a second bellows cano 15 is erected so that it partially overlaps with 4.
  • an upper electrode 16 made of a conductive material is provided so as to face the lower electrode 2.
  • a large number of gas discharge holes 17 are formed in the upper electrode 16 and are provided on the upper surface of the apparatus main body 1.
  • a processing gas containing a CF-based gas is supplied from a gas supply port 18 to a processing chamber 22 through a gas discharge hole 17.
  • the gas supply port 18 is connected to a gas supply source 21 via a flow rate regulating valve 19 and an on-off valve 20 provided in the gas pipe G. Accordingly, the processing gas supplied from the gas supply source 21 reaches the gas supply port 18 via the on-off valve 20 and the flow control valve 19, and is discharged from the gas discharge hole 17 to the processing chamber 22. be introduced.
  • the upper electrode 16 is held at its peripheral edge by a seal ring 41 formed of an insulating material, and further, a protective ring 42 is formed around the seal ring 41.
  • a shield member 43 is suspended from the outer periphery of the protection ring 42.
  • An outlet 23 is formed at the bottom of the apparatus body 1.
  • the discharge port 23 is connected to a vacuum pump 24, and a workpiece transfer port 25 is formed on the lower side of the apparatus main body 1. Loading and unloading of the body wafer 3 is performed.
  • the semiconductor wafer 3 transferred into the processing chamber 22 through the processing object transfer port 25 is masked and electrostatically held by the electrostatic chuck 4.
  • a permanent magnet 26 is provided on the side surface of the apparatus main body 1 along the outer periphery.
  • the permanent magnet generates a magnetic field in the processing chamber 22 in a direction parallel to the processing surface of the semiconductor wafer 3 held by the electrostatic chuck 4.
  • the position of the semiconductor wafer 3 is adjusted by moving the elevating shaft 5 in the direction of arrow A by a driving mechanism (not shown).
  • the elevating shaft 5 acts as a power supply rod, and high-frequency power of, for example, 13.56 MHz can be applied to the lower electrode 2 from the high-frequency power source 7.
  • high-frequency power of, for example, 13.56 MHz
  • a glow discharge can be generated between the lower electrode 2 and the upper electrode 6.
  • the orthogonal electric field and the magnetic field are orthogonal.
  • a magnetic field is formed.
  • the pressure in the processing chamber 22 is reduced to a predetermined vacuum atmosphere by the vacuum pump 24, and the processing gas from the gas supply source 21 is supplied to the processing chamber 22.
  • This processing gas is turned into plasma, and the plasma confined between the lower electrode 2 and the upper electrode 16 performs desired fine processing on the surface to be processed of the masked semiconductor wafer 3. .
  • the components inside the chamber exposed to the plasma atmosphere that is, the focus ring 13, the seal ring 41, the protection ring 42, the shield member 43,
  • the first and second bellows covers 14, 15 are made of PBI resin with excellent plasma resistance.
  • the semiconductor wafer 3 is subjected to the dry etching treatment, and the surfaces of the components in the chamber exposed to the plasma atmosphere are also etched and consumed. Parts need to be replaced with new parts.
  • quartz, PI resin, and PAI resin which have been used as component materials for chamber components, have poor plasma resistance, and require frequent replacement of chamber components. However, it was a hindrance to improving productivity.
  • the experimental results of the present inventors have revealed that the PBI resin has better plasma resistance than the quartz, PI resin, and PAI resin.
  • the components inside the chamber that are exposed to water are made of PBI resin.
  • the PBI resin Since the PBI resin has excellent adhesiveness, solid fine particles generated by the reaction with the CF-based gas in the processing chamber 22 and scattered in the plasma atmosphere are easily applied to the PBI resin chamber components. The solid fine particles can be effectively prevented from being deposited on the object to be treated.
  • the molecular structural formula of PBI is represented by the following general formula (1), and PBI contains an imido group (one NH group).
  • the processing gas is generally a mixed gas containing Ar gas, O 2 gas, etc. in a CF-based gas
  • the PBI imido group reacts with O 2 in the processing chamber 22.
  • a reactant containing hydroxyl groups mono-OH groups
  • the amount of water absorbed by the PBI resin increases, and the water absorbed by the PBI resin may adhere to the semiconductor wafer 3.
  • a predetermined etching process is performed on the semiconductor wafer 3, and then the supply of the processing gas is stopped and a dummy operation is performed for a predetermined time. In some cases, it may be possible to eliminate moisture, but this requires extra time for the dummy operation and cannot improve productivity.
  • the PBI resin is subjected to a drying treatment in advance, and the dried PBI resin is used as a component material of the components in the chamber.
  • FIG. 4 is a flowchart showing a manufacturing process of the components in the chamber.
  • the PBI powder was reduced by a vibrating vacuum dryer under a reduced pressure of 1,995 Pa (15 Torr) at a temperature of 140 t to 180 ° C for 5 to 7 hours.
  • Vacuum drying (S101) and then, under a predetermined condition, by a well-known pressure sintering (Hot Press) method, to a predetermined shape, for example, focusing ring 13 or shield.
  • a molded article having a shape substantially corresponding to the ring 41 or the like is manufactured (S102), and thereafter, Machining such as cutting is performed (S103), followed by degreasing and pure water washing (S104).
  • anneal treatment of heating at a temperature of 280 ° C. to 300 ° C. for 2 to 4 hours was performed twice, and then at a temperature of 340 ° C. to 360 ° C. It is preferable to perform the annealing process once for 2 to 4 hours.
  • Sample B contains phthalic anhydride and isobutyl alcohol. Only a small amount of impurities such as cerazole, that is, the effect of removing impurities in cerazole by performing once annealing treatment at 350 X: for 3 hours .
  • the water content was measured by high-precision temperature-separated gas analysis.
  • FIG. 5 is a characteristic diagram showing the change over time of the BTM (bottom) dimension of the etching groove.
  • FIG. 5 (a) shows that the PBI resin in which the water content was suppressed to 700 ppm was used.
  • the BTM (bottom) of the etching groove is different between the case where the PBI resin whose moisture content is suppressed to 370 ppm and the case where the PBI resin whose moisture content is 224 ppm are used. ) The dimensional variation and the change over time were compared. This indicates that when the water content of the PBI resin is suppressed, the variation in the BTM (bottom) dimension of the etching groove and the change with time can be suppressed.
  • the cleaning process after machining is performed as follows.
  • the molded product after machining is subjected to degreasing and pure water washing to remove heavy metals adhering to the surface with hydrofluoric acid, and then to pure water washing and ultrasonic cleaning, and then to natural polymer material. Polishing (polishing) the surface to remove solid fine particles on the surface, followed by high-pressure cleaning and ultrapure water cleaning, and then cleaning after machining. I have.
  • the first embodiment of the present invention exposure to a plasma atmosphere is performed.
  • the components inside the chamber are made of dried PBI resin, so the plasma resistance is higher than those made of quartz, PI resin and PAI resin.
  • the durability of the product is improved, the frequency of component replacement is reduced, and productivity can be improved.
  • PBI resin has excellent adhesion, even if solid fine particles of the reaction product generated by reacting with the processing gas are scattered in the plasma atmosphere, they are easily adsorbed on the PBI chamber components. Therefore, it is possible to prevent solid fine particles from being deposited on the semiconductor product.
  • the apparatus main body 1 is detachably mounted on an alumite-treated outer wall 1a made of A1 and over the entire inner peripheral surface of the outer wall 1a.
  • the inner wall 1b is formed of a sintered ceramic material containing no aluminum component, that is, an aluminum-less sintered ceramic material.
  • the focus ring 13 exposed to the plasma atmosphere, the insulator ring 40, the electrode protection member 8, the notch plate 12 and the first and second plates are provided.
  • the components inside the chamber such as the rose covers 14 and 15 are arranged at predetermined positions.
  • the components inside the chamber are also made of an aluminum-less sintered ceramic. It is formed of a box material.
  • Is an Aluminum-less sintering Sera Mi click scan materials for example, S i 3 N 4, Y 2 0 3, S i C 1 kind of material or two or more composite material mainly use the Sa It is.
  • S i 0 2 excellent plasma resistance as compared with, moreover machining debris generated during even rather small compared to S i 0 2, was but One with dummy operation also short the kinds of materials requires time, i.e. S i 3 N 4, Y 2 0 3, S i C 1 kind of material or two or more composite material mainly composed of, preferred and rather is tempered aid and Les Te Lee A material to which at least one of tribium (Yb) and yttrium (Y) is added is used.
  • the above-described chamber inner part (plasma-resistant part) was formed of the above-described aluminum-less sintered ceramic material similarly to the inner wall part 1b.
  • Ri Do clear that the this that can have a this micromachining a connexion semiconductor wafer 3 also in Chiya Nba parts S i ⁇ If formed by two material substantially equal Etchingu speed, therefore, the desired edge It is also possible to secure the switching speed.
  • these aluminum-less ceramic materials having excellent plasma resistance are obtained by a normal pressure sintering method, a pressure sintering method (Hot Press) method, or an isotropic pressure sintering method (Hot Isostatic Press method). Needless to say, it can be easily formed into a predetermined shape using a well-known sintering method.
  • the semiconductor wafer 3 to be processed is formed of A 1 Contamination can be avoided, and product yield can be improved.
  • the components inside the chamber arranged inside the main body 1 also As with b, superior S i 3 N There Y 2 0 3, S i aluminum-less sintering Serra a C like as a main component Mi click scan material plasma resistance, and rather is a sintering aid like Since it is made of aluminum-less sintered ceramics material to which at least one of yttrium and yttrium is added, a conventional method is used.
  • a magnetic field assist type plasma etching apparatus in which permanent magnets 26 are arranged on the outer periphery of the apparatus main body 1 has been described as an example, but other methods, for example, permanent magnets 26 are provided. Instead, the same can be applied to an ion-assist type plasma etching apparatus in which high-frequency power is applied to both the upper electrode 16 and the lower electrode 2 to generate plasma. Needless to say.
  • FIG. 11 is a schematic view showing a method of manufacturing a component material of a plasma processing apparatus according to the third embodiment.
  • the component material for a plasma processing apparatus is manufactured by an oxyhydrogen melting method.
  • Is the above predetermined different materials, plasma resistance excellent material specifically, such as Y 2 0 3 rare earth compound or a, S i C and S i 3 of N 4, such as S i 0 2 other than Kei-containing compounds, a 1 2 0 aluminum Niu beam compounds such 3, or Y 2 a, 5 0 12 (I Tsu Application Benefits U arm one aluminum - Gane Tsu DOO; YAG) rare earth compounds such as aluminum A reaction product with a nickel compound can be used.
  • the content of the above-mentioned different material with respect to SiO 2 is set to 1 wt% to 5 wt%.
  • the content of the above-mentioned heterogeneous material is set to 1 wt% to 5 wt% because, when the content of the above-mentioned heterogeneous material is less than 1 wt%, the content of the heterogeneous material is too small and the plasma resistance On the other hand, even if the content of different materials exceeds 5 wt%, the plasma resistance becomes saturated, and the effect of adding different materials cannot be obtained. It is.
  • the plasma resistance of a rare earth compound or the like is high. Since addition of superior predetermined different materials uniformly S i 0 2 powder 1 0 in 1 in an oxyhydrogen melting method (mixing) is to manufactures component material 1 0 6, using parts materials 1 0 6 Of plasma processing equipment (sealing rings 41, focusing rings 13, insulating rings, etc.) manufactured by using this method has improved plasma resistance, and the frequency of replacement of equipment parts has been improved compared to the past. And the productivity of semiconductor manufacturing can be improved.
  • the present inventors found that two types of PBI (PBI-A, PBI-B) were used as PBI materials, and three types of PIs (PI_A, PI-B, PI—C), one type of PAI (PAI-A) was used as the PAI material, and each of these materials was used to measure a length of 20 mm, a width of 20 mm, and a thickness of 2 mm. Test pieces were prepared. Then, as shown in Fig. 2, the outer peripheral portion 30 of each test piece was masked with polyimide film (DuPont, registered trademark "Pyton”) and the central portion 31 was formed.
  • An irradiation surface of 10 mm in length and 10 mm in width is provided, plasma is irradiated for 20 hours under the following discharge conditions, and the amount of shaving in the X-axis direction and Y-axis direction is measured by a surface roughness meter. ) was measured, and the plasma resistance was evaluated.
  • Processing chamber pressure 1 3 3 Pa (1.0 Torr)
  • FIG. 3 is a bar graph showing the measurement results, in which the abscissa indicates the material of each test piece and the ordinate indicates the shaving amount (m) after 20 hours.
  • the PBI material consumes less than the PI material and the PAI material, and has excellent plasma resistance.
  • the present inventors first used the S i N 4 material mainly composed of S i 3 N 4 as an embodiment, S i 0 mainly composed of S i 0 2 and Comparative Example Using two materials, an insulator ring 40 having an approximate diameter of 23 Oram, an outer diameter of 280 mm, and a total height of 15 mm was manufactured.
  • the insulating ring 40 is disposed at a predetermined position in the processing chamber 22, and the 8-inch (203.2 mm) semiconductor wafer 3 is placed on the electrostatic chuck 4. Then, plasma irradiation was performed by generating a glow discharge under predetermined discharge conditions, and the number of solid fine particles before and after plasma irradiation was measured. Specifically, since the crushed debris is adhered to the surface of the insulator ring 40 by machining, five semiconductor wafers 3 are used to remove the crushed debris.
  • a dummy operation is performed for 1 minute each, for a total of 5 minutes.
  • a new semiconductor wafer 3 is sucked and held on the electrostatic chuck 4 and plasma irradiation is performed for 30 seconds, and before and after the plasma irradiation.
  • the number of solid fine particles was measured with KLA—Tencor Surfscan6420.
  • the discharge conditions are as follows.
  • Processing chamber pressure 5.32 Pa (4.0 X 10 -2 Torr)
  • Reactive gas species C 4 F 8 / C 0 / A r / 0 2
  • Table 2 shows the number of solid particles adhered on the semiconductor wafer 3 before and after the test.
  • the S i 0 2 material showed an increase in solid fine particles of 0.2 ⁇ m or more by 115 before and after plasma irradiation. 3 in the N 4 material not increased only nine.
  • Y 2 0 3 material in the present invention example was composed mainly of Y 2 0 3, mainly composed of A 1 2 0 3 and Comparative Example A by using the 1 2 0 3 material, to produce a second embodiment similar to Lee Nshiyu les Isseki-ring 4 0.
  • FIG. 6 is a characteristic diagram showing the measurement results, in which the horizontal axis represents the application time (hr) of the high-frequency power, and the vertical axis represents the number of solid fine particles having a diameter of not less than 0.1 ⁇ m. Also, in the figure, the solid line a generation number of the solid particles of Y 2 0 3 material is present invention embodiment shows, dashed line shows the number of generated solid particulates of A 1 2 0 3 material is a comparative example I have.
  • the A 1 F 3 reacts A 1 2 0 3 is a C 4 F 8 gas in the comparative example and generate, the A 1 F 3 scatters the plasma atmosphere becomes solid particulates, the Re this Thus, it is presumed that the solid fine particles adhere to the semiconductor wafer 3.
  • the present inventors S i C as an embodiment, the Y 2 0 3, S i 3 N 4, and the ratio Comparative Examples A 1 2 0 3, the material of the S i 0 2 , 20 mm in length, 20 mm in width, and 2 mm in thickness were prepared.
  • the outer periphery 30 of each test piece was made of polyimide film (DuPont, Inc.). (Registered trademark “Kabton”)), and an irradiation surface of 10 mm in length and 10 mm in width is provided in the center 31, and plasma is applied under the same discharge conditions as in the second embodiment. Irradiation was performed for 0 hour, and the amount of wear (consumed amount) in the X-axis direction and the Y-axis direction was measured with a surface roughness meter.
  • FIG. 7 is a bar graph showing the measurement results.
  • the horizontal axis shows each ceramic material, and the vertical axis shows the amount of shaving (m) after 20 hours.
  • the A 1 2 0 3 material have been excellent in plasma resistance even as compared with the S i 3 N 4 material Ya S i C material, earthenware pots by apparent from the experimental results of the second embodiment, since the solid particles a 1 2 0 3 consists of a 1 F 3 reacts with C 4 F 8 gas is generated, not suitable for part materials for flops plasma processing apparatus.
  • the present inventors used the Si 3 N 4 material as the present example, and used the SiO 2 material as a comparative example. Letter The etching rates were compared under the above-mentioned discharge conditions.
  • Figure 8 is shows the measurement results of the S i 3 N 4 material
  • Figure 9 shows the measurement results of the S i 0 2 material.
  • the horizontal axis represents the wafer diameter (mm) of the semiconductor wafer
  • the vertical axis represents the etching speed (nm / min). The measurement was performed on the XY plane of the semiconductor wafer in both the X-axis direction and the Y-axis direction.
  • the etching speed of the Si 3 N 4 material shown in FIG. 8 is 3.1% at 3.4 nm / min, and the etching speed of the Si 0 2 material shown in FIG. 9 is 302 nm / min. % and Do Ri, even when used in the S i 3 N 4 material as plasma resistance component (Cha Nba in part), it is the this to secure substantially the same etching performance as si 0 2 material Was confirmed.
  • the present inventors set the purity of Si 3 N 4 obtained by adding yttrium and yttrium to Si 3 N 4 as a sintering aid in this example.
  • Application Benefits Piumu ⁇ Pi Lee Tsu S i 3 N 4 purity Application Benefits ⁇ beam was pressurized Introduction 9 1% S i 3 N 4 - B, and S i 3 N 4 to S i 3 N 4 purity plus b tree
  • Application Benefits um as a sintering aid is 9 8% S i 3 N 4 - C, and as Comparative example S i 3 N 4 to S i 3 N 4 purity plus magnesium as a sintering aid of 9 9.
  • Fig. 10 is a bar graph showing the measurement results. The horizontal axis shows each ceramic material, and the vertical axis shows the amount of shaving 20 hours after Quartz was 100. Shows the amount of scraping.
  • S i 3 N 4 was added Lee Tsu Application Benefits um as a sintering aid to the S i 3 N 4 - scraping amount of C is Ri about 6 Waridea the scraping amount of Q uartz, S i 3 N 4 S i 3 N 4 was added magnesium as a sintering agent - small Ri by abrasion amount of D.
  • scraping amount Ri does not depend on S i 3 N 4 purity by the this adding dry ⁇ agent S i 3 N 4, scraping amount Ri is Do rather small, also drying aid Thus, it is found that it is appropriate to use at least one of yttrium and yttrium.
  • the components for the plasma processing apparatus are formed of dried polybenzoimidazole (PBI), quartz and PI
  • PBI polybenzoimidazole
  • quartz quartz
  • PI polybenzoimidazole
  • the plasma resistance is improved compared to conventional products made of resin and PAI resin, and therefore the durability of the components inside the chamber can be improved, thereby extending the maintenance cycle.
  • Can The frequency of parts replacement is also reduced.
  • the components for the plasma processing apparatus according to the present invention are formed of dried polybenzoimidabour, moisture does not adhere to products such as semiconductor devices, and therefore, unnecessary waste operation There is no need to do this.
  • the method for manufacturing a part for a plasma processing apparatus is characterized in that after performing a vacuum drying process on a polybenzomidazole powder, a molding process is performed on the vacuum-dried powder to form a molded product having a predetermined shape. Because of this, it is possible to easily manufacture parts for plasma processing equipment that excel in plasma resistance and remove water absorption. Therefore, the BTM (bottom) portion of the etching groove can be manufactured. Variations in dimensions and changes over time can be suppressed.
  • the components disposed inside the apparatus main body and exposed to the plasma atmosphere are formed of a dry-processed polybenzimidazole, the components are The plasma resistance of these components is improved, and therefore the durability of these components is also improved. As a result, the frequency of component replacement is reduced, and the productivity of products such as semiconductor devices can be improved.
  • the plasma processing apparatus includes an inner wall of the apparatus main body and components exposed to a plasma atmosphere provided inside the processing chamber.
  • the sintered ceramic material may be composed of one or more materials selected from materials containing silicon nitride, yttrium oxide, or silicon carbide as a main component. Since it is composed of one or more selected from the above, so-called dummy operation can be shortened and productivity can be improved.
  • the frequency of these sintered Yuise La Mi click material also enabling high- also improve durability because of its excellent in ⁇ Pu plasma resistance as compared with quartz (S i 0 2), and wanted to replace parts And maintainability is improved.
  • these sintered ceramic materials contain at least one of yttrium beam and yttrium as a sintering aid, they are resistant to sintering.
  • the plasma properties can be further improved, and the durability can be further improved.
  • the plasma processing device component according to the present invention is a plasma processing device used for an insulating component disposed inside a device main body of a plasma processing device. Since it is a component for equipment that contains silicon oxide as a main component and is added with a predetermined dissimilar material other than the silicon oxide, it has plasma resistance as a predetermined dissimilar material. By selecting an excellent material, it is possible to manufacture a component for a plasma processing apparatus having an excellent plasma resistance, thereby improving the durability of the component and improving the semiconductor performance. Production productivity can be improved.
  • the method for manufacturing a component for a plasma processing apparatus is a method for manufacturing a component for a plasma processing apparatus used for an insulating component disposed inside an apparatus body of the plasma processing apparatus, comprising: Since a predetermined heterogeneous material other than silicon oxide is added to the material, the silicon oxide and the heterogeneous material are melted in an oxyhydrogen flame, and then cooled to manufacture parts for a plasma processing apparatus.
  • the elemental oxide and the dissimilar material can be surely and uniformly mixed, and a desired component for a plasma processing apparatus having excellent plasma resistance can be obtained. Wear.
  • the different materials are selected from rare earth compounds, silicon compounds other than the above silicon oxides, and substances containing one or more selected from aluminum compounds, In addition, the plasma resistance described above can be easily improved.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention porte sur des pièces d'un appareil de traitement au plasma se plaçant dans le corps de l'appareil, étant exposées au plasma (anneau de focalisation, anneau de blindage, anneau de protection, élément de blindage et première et deuxième couverture en accordéon), et se caractérisant par leurs matériaux constitutifs: un polybenzimidazole soumis à un traitement de séchage, un matériau céramique fritté et un matériau contenant principalement de l'oxyde de silicium et un autre matériau spécifié.
PCT/JP2002/001527 2001-02-21 2002-02-21 Pieces d'un appareil de traitement au plasma, leur procede de fabrication et appareil de traitement au plasma WO2002067312A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021091695A1 (fr) * 2019-11-05 2021-05-14 Lam Research Corporation Composant de chambre à plasma d'oxyde métallique monocristallin

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DE102014220220B4 (de) * 2014-10-07 2018-05-30 Carl Zeiss Smt Gmbh Vakuum-Lineardurchführung und Vakuum-System damit

Citations (6)

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Publication number Priority date Publication date Assignee Title
US4814530A (en) * 1987-09-03 1989-03-21 Hoechst Celanese Corporation Sintered polybenzimidazole article
JPH0611346U (ja) * 1992-07-20 1994-02-10 ヘキストジャパン株式会社 ドライエッチング装置用ポリベンゾイミダゾール製物品
JPH0940434A (ja) * 1995-07-28 1997-02-10 Tosoh Corp 高純度石英ガラス及びその製造方法
JPH11228172A (ja) * 1998-02-17 1999-08-24 Kobe Steel Ltd プラズマ耐食性ガラス及びこれを用いた装置
JP2001019549A (ja) * 1999-06-29 2001-01-23 Kyocera Corp 耐食性部材及びこれを用いた半導体・液晶製造装置用構成部材
JP2001261364A (ja) * 2000-03-21 2001-09-26 Sumitomo Metal Ind Ltd ガラス、耐プラズマ部材、電磁波透過窓用部材およびプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814530A (en) * 1987-09-03 1989-03-21 Hoechst Celanese Corporation Sintered polybenzimidazole article
JPH0611346U (ja) * 1992-07-20 1994-02-10 ヘキストジャパン株式会社 ドライエッチング装置用ポリベンゾイミダゾール製物品
JPH0940434A (ja) * 1995-07-28 1997-02-10 Tosoh Corp 高純度石英ガラス及びその製造方法
JPH11228172A (ja) * 1998-02-17 1999-08-24 Kobe Steel Ltd プラズマ耐食性ガラス及びこれを用いた装置
JP2001019549A (ja) * 1999-06-29 2001-01-23 Kyocera Corp 耐食性部材及びこれを用いた半導体・液晶製造装置用構成部材
JP2001261364A (ja) * 2000-03-21 2001-09-26 Sumitomo Metal Ind Ltd ガラス、耐プラズマ部材、電磁波透過窓用部材およびプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021091695A1 (fr) * 2019-11-05 2021-05-14 Lam Research Corporation Composant de chambre à plasma d'oxyde métallique monocristallin

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