TWI239008B - Non-volatile magnetic memory and manufacturing method thereof - Google Patents

Non-volatile magnetic memory and manufacturing method thereof Download PDF

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Publication number
TWI239008B
TWI239008B TW092135571A TW92135571A TWI239008B TW I239008 B TWI239008 B TW I239008B TW 092135571 A TW092135571 A TW 092135571A TW 92135571 A TW92135571 A TW 92135571A TW I239008 B TWI239008 B TW I239008B
Authority
TW
Taiwan
Prior art keywords
layer
interlayer insulating
ferromagnetic
connection hole
insulating layer
Prior art date
Application number
TW092135571A
Other languages
English (en)
Chinese (zh)
Other versions
TW200426840A (en
Inventor
Makoto Motoyoshi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200426840A publication Critical patent/TW200426840A/zh
Application granted granted Critical
Publication of TWI239008B publication Critical patent/TWI239008B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
TW092135571A 2003-01-06 2003-12-16 Non-volatile magnetic memory and manufacturing method thereof TWI239008B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003000486A JP2004214459A (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200426840A TW200426840A (en) 2004-12-01
TWI239008B true TWI239008B (en) 2005-09-01

Family

ID=32818781

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135571A TWI239008B (en) 2003-01-06 2003-12-16 Non-volatile magnetic memory and manufacturing method thereof

Country Status (3)

Country Link
US (2) US6982446B2 (https=)
JP (1) JP2004214459A (https=)
TW (1) TWI239008B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4567963B2 (ja) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100657897B1 (ko) * 2004-08-21 2006-12-14 삼성전자주식회사 전압 제어층을 포함하는 메모리 소자
US7169623B2 (en) * 2004-09-09 2007-01-30 Tegal Corporation System and method for processing a wafer including stop-on-aluminum processing
JP2006086322A (ja) * 2004-09-16 2006-03-30 Renesas Technology Corp 磁気抵抗記憶素子およびその製造方法
JP2006165031A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd トンネル接合素子の製造方法およびその製造装置
WO2006070803A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation 磁気ランダムアクセスメモリ及びその製造方法
KR100761541B1 (ko) * 2004-12-31 2007-09-27 매그나칩 반도체 유한회사 압력 센서의 제조 방법
KR100626390B1 (ko) 2005-02-07 2006-09-20 삼성전자주식회사 자기 메모리 소자 및 그 형성 방법
KR100719345B1 (ko) * 2005-04-18 2007-05-17 삼성전자주식회사 자기 기억 장치의 형성 방법
DE102005047482A1 (de) * 2005-10-04 2007-04-12 Infineon Technologies Ag Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP2008211057A (ja) 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ
JP4384196B2 (ja) * 2007-03-26 2009-12-16 株式会社東芝 スピンｆｅｔ、磁気抵抗効果素子及びスピンメモリ
US7939188B2 (en) * 2008-10-27 2011-05-10 Seagate Technology Llc Magnetic stack design
JP2012160671A (ja) * 2011-02-02 2012-08-23 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
JP2014090109A (ja) * 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 磁気抵抗素子の製造方法
KR102099191B1 (ko) * 2013-03-15 2020-05-15 인텔 코포레이션 내장된 자기 터널 접합을 포함하는 로직 칩
MY192206A (en) * 2013-03-15 2022-08-08 Intel Corp Logic chip including embedded magnetic tunnel junctions
US9373663B2 (en) * 2013-09-20 2016-06-21 Avalanche Technology, Inc. Landing pad in peripheral circuit for magnetic random access memory (MRAM)
US10495771B2 (en) * 2015-10-27 2019-12-03 Schlumberger Technology Corporation Method and system for processing dipole anisotropy
JP6616803B2 (ja) * 2017-06-19 2019-12-04 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子
CN113903764B (zh) * 2020-07-07 2025-08-19 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294743A (ja) 1999-04-01 2000-10-20 Matsushita Electronics Industry Corp 強誘電体メモリ装置
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP2001298161A (ja) 2000-04-12 2001-10-26 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
US6587370B2 (en) * 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
JP2002334574A (ja) 2001-05-02 2002-11-22 Canon Inc 不揮発性メモリの駆動方法及び不揮発性メモリ
KR100403313B1 (ko) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법
KR100442959B1 (ko) * 2001-05-22 2004-08-04 주식회사 하이닉스반도체 마그네틱 램 및 그 형성방법
US7262064B2 (en) * 2001-10-12 2007-08-28 Sony Corporation Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
KR100457159B1 (ko) * 2001-12-26 2004-11-16 주식회사 하이닉스반도체 마그네틱 램
JP2004119478A (ja) * 2002-09-24 2004-04-15 Renesas Technology Corp 半導体記憶装置、不揮発性記憶装置および磁気記憶装置

Also Published As

Publication number Publication date
JP2004214459A (ja) 2004-07-29
US6982446B2 (en) 2006-01-03
US20060023561A1 (en) 2006-02-02
US7271010B2 (en) 2007-09-18
TW200426840A (en) 2004-12-01
US20040157427A1 (en) 2004-08-12

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