TWI233174B - Temperature-controlled chuck and method for controlling the temperature of a substantially flat object - Google Patents
Temperature-controlled chuck and method for controlling the temperature of a substantially flat object Download PDFInfo
- Publication number
- TWI233174B TWI233174B TW091109337A TW91109337A TWI233174B TW I233174 B TWI233174 B TW I233174B TW 091109337 A TW091109337 A TW 091109337A TW 91109337 A TW91109337 A TW 91109337A TW I233174 B TWI233174 B TW I233174B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- rear side
- flat object
- elements
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000009826 distribution Methods 0.000 claims abstract description 30
- 239000013307 optical fiber Substances 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 120
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000012937 correction Methods 0.000 description 5
- 230000009021 linear effect Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 241000234295 Musa Species 0.000 description 3
- 235000018290 Musa x paradisiaca Nutrition 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 244000046038 Ehretia acuminata Species 0.000 description 1
- 235000009300 Ehretia acuminata Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002534 radiation-sensitizing agent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000010269 sulphur dioxide Nutrition 0.000 description 1
- 239000004291 sulphur dioxide Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Temperature (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/871,854 US6495802B1 (en) | 2001-05-31 | 2001-05-31 | Temperature-controlled chuck and method for controlling the temperature of a substantially flat object |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI233174B true TWI233174B (en) | 2005-05-21 |
Family
ID=25358296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091109337A TWI233174B (en) | 2001-05-31 | 2002-05-06 | Temperature-controlled chuck and method for controlling the temperature of a substantially flat object |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6495802B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4476622B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100890874B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN1291448C (cg-RX-API-DMAC7.html) |
| TW (1) | TWI233174B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2002099853A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7161121B1 (en) * | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
| TWI266378B (en) * | 2003-03-06 | 2006-11-11 | Toshiba Corp | Baking apparatus, heat treatment method, manufacturing method of semiconductor device and pattern forming method |
| EP1623452B1 (en) * | 2003-05-07 | 2006-11-22 | Axcelis Technologies Inc. | Wide temperature range chuck system |
| US6927835B2 (en) * | 2003-09-12 | 2005-08-09 | Asml Netherlands B.V. | Adaptive thermal control of lithographic chemical processes |
| US20050158419A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Thermal processing system for imprint lithography |
| US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
| JP4765328B2 (ja) * | 2004-04-16 | 2011-09-07 | 東京エレクトロン株式会社 | 被処理体の処理装置 |
| EP2490073B1 (en) * | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
| NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
| CN109254501A (zh) | 2012-02-03 | 2019-01-22 | Asml荷兰有限公司 | 衬底支架、光刻装置、器件制造方法和制造衬底保持器的方法 |
| KR101370049B1 (ko) * | 2012-12-21 | 2014-03-06 | 주식회사 나래나노텍 | 기판 온도 측정 장치 및 방법, 및 이를 구비한 기판 열처리 챔버 및 장치 |
| US9224583B2 (en) * | 2013-03-15 | 2015-12-29 | Lam Research Corporation | System and method for heating plasma exposed surfaces |
| US10736182B2 (en) * | 2014-07-02 | 2020-08-04 | Applied Materials, Inc. | Apparatus, systems, and methods for temperature control of substrates using embedded fiber optics and epoxy optical diffusers |
| KR102423818B1 (ko) | 2015-12-18 | 2022-07-21 | 삼성전자주식회사 | 정전척 어셈블리 및 그를 포함하는 반도체 제조장치, 그리고 정전척 온도 측정방법 |
| WO2017144277A1 (en) | 2016-02-24 | 2017-08-31 | Asml Netherlands B.V. | Substrate handling system and lithographic apparatus |
| US10973088B2 (en) | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
| CN113432737A (zh) * | 2020-03-19 | 2021-09-24 | 长鑫存储技术有限公司 | 晶圆卡盘温度量测及温度校准的方法和温度量测系统 |
| CN112405333B (zh) * | 2020-12-04 | 2022-08-16 | 华海清科(北京)科技有限公司 | 一种化学机械抛光装置和抛光方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5220171A (en) * | 1990-11-01 | 1993-06-15 | Canon Kabushiki Kaisha | Wafer holding device in an exposure apparatus |
| KR920012893A (ko) * | 1990-12-28 | 1992-07-28 | 이헌조 | 온도측정센서 |
| EP0633608B1 (en) * | 1993-07-08 | 2000-10-11 | Sumitomo Metal Industries, Ltd. | Process for producing a pin-finned heat sink |
| JPH07283095A (ja) * | 1994-04-08 | 1995-10-27 | Hitachi Ltd | 半導体基板の処理方法及び装置 |
| WO1995028002A1 (fr) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Procede et dispositif de traitement d'une plaquette de semi-conducteur |
| WO1998005060A1 (en) * | 1996-07-31 | 1998-02-05 | The Board Of Trustees Of The Leland Stanford Junior University | Multizone bake/chill thermal cycling module |
| JP3379394B2 (ja) * | 1997-07-28 | 2003-02-24 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| JP3246891B2 (ja) * | 1998-02-03 | 2002-01-15 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP4625183B2 (ja) * | 1998-11-20 | 2011-02-02 | ステアーグ アール ティ ピー システムズ インコーポレイテッド | 半導体ウェハのための急速加熱及び冷却装置 |
-
2001
- 2001-05-31 US US09/871,854 patent/US6495802B1/en not_active Expired - Fee Related
-
2002
- 2002-04-24 WO PCT/US2002/013170 patent/WO2002099853A2/en not_active Ceased
- 2002-04-24 KR KR1020037015617A patent/KR100890874B1/ko not_active Expired - Fee Related
- 2002-04-24 JP JP2003502868A patent/JP4476622B2/ja not_active Expired - Fee Related
- 2002-04-24 CN CNB028109473A patent/CN1291448C/zh not_active Expired - Fee Related
- 2002-05-06 TW TW091109337A patent/TWI233174B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040007622A (ko) | 2004-01-24 |
| WO2002099853B1 (en) | 2003-11-20 |
| JP4476622B2 (ja) | 2010-06-09 |
| US20020179585A1 (en) | 2002-12-05 |
| CN1537320A (zh) | 2004-10-13 |
| CN1291448C (zh) | 2006-12-20 |
| JP2004531067A (ja) | 2004-10-07 |
| WO2002099853A3 (en) | 2003-02-20 |
| US6495802B1 (en) | 2002-12-17 |
| KR100890874B1 (ko) | 2009-03-31 |
| WO2002099853A2 (en) | 2002-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |