JP4476622B2 - 温度制御チャック - Google Patents

温度制御チャック Download PDF

Info

Publication number
JP4476622B2
JP4476622B2 JP2003502868A JP2003502868A JP4476622B2 JP 4476622 B2 JP4476622 B2 JP 4476622B2 JP 2003502868 A JP2003502868 A JP 2003502868A JP 2003502868 A JP2003502868 A JP 2003502868A JP 4476622 B2 JP4476622 B2 JP 4476622B2
Authority
JP
Japan
Prior art keywords
temperature
wafer
support surface
back surface
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003502868A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004531067A5 (cg-RX-API-DMAC7.html
JP2004531067A (ja
Inventor
ジー． マルタベス、ジョン
ビー． シャルル、アラン
イー． マウツ、カール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2004531067A publication Critical patent/JP2004531067A/ja
Publication of JP2004531067A5 publication Critical patent/JP2004531067A5/ja
Application granted granted Critical
Publication of JP4476622B2 publication Critical patent/JP4476622B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
  • Physical Vapour Deposition (AREA)
JP2003502868A 2001-05-31 2002-04-24 温度制御チャック Expired - Fee Related JP4476622B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/871,854 US6495802B1 (en) 2001-05-31 2001-05-31 Temperature-controlled chuck and method for controlling the temperature of a substantially flat object
PCT/US2002/013170 WO2002099853A2 (en) 2001-05-31 2002-04-24 Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

Publications (3)

Publication Number Publication Date
JP2004531067A JP2004531067A (ja) 2004-10-07
JP2004531067A5 JP2004531067A5 (cg-RX-API-DMAC7.html) 2005-12-22
JP4476622B2 true JP4476622B2 (ja) 2010-06-09

Family

ID=25358296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003502868A Expired - Fee Related JP4476622B2 (ja) 2001-05-31 2002-04-24 温度制御チャック

Country Status (6)

Country Link
US (1) US6495802B1 (cg-RX-API-DMAC7.html)
JP (1) JP4476622B2 (cg-RX-API-DMAC7.html)
KR (1) KR100890874B1 (cg-RX-API-DMAC7.html)
CN (1) CN1291448C (cg-RX-API-DMAC7.html)
TW (1) TWI233174B (cg-RX-API-DMAC7.html)
WO (1) WO2002099853A2 (cg-RX-API-DMAC7.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
TWI266378B (en) * 2003-03-06 2006-11-11 Toshiba Corp Baking apparatus, heat treatment method, manufacturing method of semiconductor device and pattern forming method
EP1623452B1 (en) * 2003-05-07 2006-11-22 Axcelis Technologies Inc. Wide temperature range chuck system
US6927835B2 (en) * 2003-09-12 2005-08-09 Asml Netherlands B.V. Adaptive thermal control of lithographic chemical processes
US20050158419A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Thermal processing system for imprint lithography
US20050156353A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Method to improve the flow rate of imprinting material
JP4765328B2 (ja) * 2004-04-16 2011-09-07 東京エレクトロン株式会社 被処理体の処理装置
EP2490073B1 (en) * 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
NL2009858A (en) 2011-12-27 2013-07-01 Asml Netherlands Bv Substrate holder, lithographic apparatus, and device manufacturing method.
CN109254501A (zh) 2012-02-03 2019-01-22 Asml荷兰有限公司 衬底支架、光刻装置、器件制造方法和制造衬底保持器的方法
KR101370049B1 (ko) * 2012-12-21 2014-03-06 주식회사 나래나노텍 기판 온도 측정 장치 및 방법, 및 이를 구비한 기판 열처리 챔버 및 장치
US9224583B2 (en) * 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
US10736182B2 (en) * 2014-07-02 2020-08-04 Applied Materials, Inc. Apparatus, systems, and methods for temperature control of substrates using embedded fiber optics and epoxy optical diffusers
KR102423818B1 (ko) 2015-12-18 2022-07-21 삼성전자주식회사 정전척 어셈블리 및 그를 포함하는 반도체 제조장치, 그리고 정전척 온도 측정방법
WO2017144277A1 (en) 2016-02-24 2017-08-31 Asml Netherlands B.V. Substrate handling system and lithographic apparatus
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
CN113432737A (zh) * 2020-03-19 2021-09-24 长鑫存储技术有限公司 晶圆卡盘温度量测及温度校准的方法和温度量测系统
CN112405333B (zh) * 2020-12-04 2022-08-16 华海清科(北京)科技有限公司 一种化学机械抛光装置和抛光方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220171A (en) * 1990-11-01 1993-06-15 Canon Kabushiki Kaisha Wafer holding device in an exposure apparatus
KR920012893A (ko) * 1990-12-28 1992-07-28 이헌조 온도측정센서
EP0633608B1 (en) * 1993-07-08 2000-10-11 Sumitomo Metal Industries, Ltd. Process for producing a pin-finned heat sink
JPH07283095A (ja) * 1994-04-08 1995-10-27 Hitachi Ltd 半導体基板の処理方法及び装置
WO1995028002A1 (fr) * 1994-04-08 1995-10-19 Hitachi, Ltd. Procede et dispositif de traitement d'une plaquette de semi-conducteur
WO1998005060A1 (en) * 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
JP3379394B2 (ja) * 1997-07-28 2003-02-24 松下電器産業株式会社 プラズマ処理方法及び装置
JP3246891B2 (ja) * 1998-02-03 2002-01-15 東京エレクトロン株式会社 熱処理装置
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置

Also Published As

Publication number Publication date
KR20040007622A (ko) 2004-01-24
WO2002099853B1 (en) 2003-11-20
TWI233174B (en) 2005-05-21
US20020179585A1 (en) 2002-12-05
CN1537320A (zh) 2004-10-13
CN1291448C (zh) 2006-12-20
JP2004531067A (ja) 2004-10-07
WO2002099853A3 (en) 2003-02-20
US6495802B1 (en) 2002-12-17
KR100890874B1 (ko) 2009-03-31
WO2002099853A2 (en) 2002-12-12

Similar Documents

Publication Publication Date Title
JP4476622B2 (ja) 温度制御チャック
US6770852B1 (en) Critical dimension variation compensation across a wafer by means of local wafer temperature control
KR100334301B1 (ko) 가열 장치, 가열 장치의 평가법 및 패턴 형성 방법
JP5610664B2 (ja) レジストがコーティングされたウエハの熱処理をインラインで監視及び制御する方法
EP1850372A1 (en) Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program
US11899377B2 (en) System and method for thermal management of reticle in semiconductor manufacturing
JP4861893B2 (ja) 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板の処理システム
KR20050121913A (ko) 베이크 장치
US8377721B2 (en) Substrate processing system and method
US20100112468A1 (en) Self-correcting substrate support system for focus control in exposure systems
JP4893463B2 (ja) 露光装置
TW201918798A (zh) 微影方法
KR20060023220A (ko) 반도체 제조용 베이크 장치
US20020092839A1 (en) Method of making an integrated circuit
JP4242804B2 (ja) 半導体素子の製造方法および製造装置
KR20240144167A (ko) 열 구역을 이용한 국소 응력 처리 튜닝을 통한 인-시투 리소그래피 패턴 향상
KR20030005499A (ko) 실리콘 재질의 베이크 플래이트 및 이를 이용한 온도 제어장치
KR100664379B1 (ko) 균일한 온도 분포를 갖는 베이크 장치
WO2011099221A1 (ja) 基板処理方法
CN101238568A (zh) 用于半导体工件的静电卡盘
KR20080034241A (ko) 포토 스피너 설비 및 그의 제어방법

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050506

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080527

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080826

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080902

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080926

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090915

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100216

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100310

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140319

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees