WO1995028002A1 - Procede et dispositif de traitement d'une plaquette de semi-conducteur - Google Patents

Procede et dispositif de traitement d'une plaquette de semi-conducteur Download PDF

Info

Publication number
WO1995028002A1
WO1995028002A1 PCT/JP1995/000701 JP9500701W WO9528002A1 WO 1995028002 A1 WO1995028002 A1 WO 1995028002A1 JP 9500701 W JP9500701 W JP 9500701W WO 9528002 A1 WO9528002 A1 WO 9528002A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
semiconductor substrate
heating
processing
light source
Prior art date
Application number
PCT/JP1995/000701
Other languages
English (en)
Japanese (ja)
Inventor
Eisuke Nishitani
Miwako Suzuki
Shigeru Kobayashi
Norihiro Uchida
Natsuyo Chiba
Hideaki Shima Mura
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7105394A external-priority patent/JPH07283096A/ja
Priority claimed from JP7105294A external-priority patent/JPH07283095A/ja
Priority claimed from JP7105194A external-priority patent/JPH07283091A/ja
Priority claimed from JP7105094A external-priority patent/JPH07283090A/ja
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1995028002A1 publication Critical patent/WO1995028002A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Definitions

  • the present invention relates to a semiconductor substrate processing method and apparatus, and more particularly to a processing heating method and apparatus applied when heating a substrate in a semiconductor production line.
  • a doped element is diffused or surface-oxidized on the surface of a semiconductor substrate, or an insulating thin film such as a silicon oxide film or a wiring thin film such as a doped polysilicon film or a metal film is formed on the substrate surface.
  • a heating energy source is placed away from a thin film forming apparatus, and the energy emitted from the heating energy source is transported by an energy transport medium to heat the semiconductor substrate. .
  • the present invention substantially uniforms the temperature distribution of the heated substrate when the substrate is heated by transporting projected energy from an energy source located remotely from the substrate or the heating energy source.
  • the present invention relates to a method and apparatus that can be effectively used in the process of heating a substrate by reducing energy loss in the processes of incidence, transport, emission and irradiation of energy emitted from a substrate.
  • a light source as the optimum heating energy source, and to transport the irradiation light from the light source by an optical fiber or the like.
  • a clean room has the role of creating an atmosphere with very little dust and at the same time creating a constant temperature and humidity.
  • it is necessary to heat the surface of the semiconductor substrate in order to process the semiconductor as a demand from the semiconductor manufacturing process. Therefore, A large number of devices are installed to dissipate a large amount of heat into the atmosphere in the clean room, and the capacity of the clean room air conditioning equipment must also be designed to be large.
  • the above-described optical heating apparatus for semiconductor substrates generally includes a lamp, which is a light emitter that serves as a heat source, in the apparatus, and heats the substrate with the light emitted by the lamp.
  • the heating lamps emit not only light with wavelengths that are efficiently absorbed by the substrate, but also light with long wavelengths, that is, infrared rays.
  • Si substrates are virtually transparent to infrared radiation and do not absorb it.
  • the long-wavelength component may raise the temperature of the atmospheric gas in the heating furnace, thereby indirectly heating the substrate.
  • the former batch-type heating furnace has the characteristic of being able to heat the entire furnace at a constant temperature and uniformity. Moved to heating furnace.
  • the single-wafer heating furnace has the characteristic of being able to rapidly change the temperature of the substrate, but the energy input from the heating lamp is large compared to the energy required to heat the substrate, resulting in poor energy efficiency.
  • CVD Chemical Vapor Deposition
  • damage caused by heat generated from the lamp such as a light transmission window that is heated and easily cracked, may be damaged by the light caused by the reactive gas.
  • Deposition on the transmissive window and fogging of the light transmissive window due to etching during self-cleaning further reduce the light transmittance.
  • Single-wafer equipment is generally disadvantageous in terms of throughput, but because the processing time required for a single operation is short, it is preferred when high-mix, low-volume production is required. It's becoming Therefore, in a single-wafer heating apparatus, it is normal to perform rapid heating and rapid cooling in order to increase the throughput even a little. Rapid heating requires more energy than batch equipment with quasi-static heating. In this way, the single-wafer heat treatment apparatus performs rapid heating, and after reaching a certain processing temperature, the light irradiation energy is rapidly reduced in order to maintain the temperature. The rate of energy inflow into the substrate during rapid heating is such that the attained heating temperature as it is is much higher than the target temperature.
  • the target temperature can be reached with the minimum amount of energy because the temperature is raised quasi-statically. That is, when the energy required for processing one substrate in a batch system is compared with the energy required for processing one substrate in a single-wafer system, the latter is larger.
  • the heating device also needs to be provided with a cooling mechanism with a large cooling capacity in order to maintain the device temperature against a large thermal input, even if it is for a short time. For this reason, the equipment becomes larger, more energy is required for cooling, and more energy is dissipated into the clean room, so the capacity of the clean room air conditioning equipment is also increased.
  • the light source and the substrate heating section are separated via a light transport medium, only the heat generated from the light source is efficiently exhausted, and the heat generated in the substrate heating section is minimized. can be suppressed. As a result, it will be possible to curb the increase in the scale of equipment in the semiconductor production line and to save energy.
  • the technique of arranging the light source unit away from the medium to be heated and using a light transport medium such as an optical fiber to transport light between them to heat the medium to be heated is not necessarily new.
  • Japanese Patent Application Laid-Open No. 4-296092 discloses a method in which a group of linearly bundled optical fibers for transmitting high-temperature light generated by a light heat source and a printed circuit board to be reflowed are covered to form a printed circuit board. Equipped with a substrate mask with light-transmitting holes so that only the necessary parts of the substrate are irradiated, and a means for moving the optical fiber group with respect to the stationary printed circuit board, the heat resistance is weak.
  • a reflow apparatus having a local heating function for a plurality of types of electronic parts has been disclosed with the intention of handling electronic parts and improving productivity.
  • a photocurable insulating resin is applied onto a circuit board on which wiring electrodes facing protruding electrodes of a semiconductor chip to be mounted are formed, thereby forming a semiconductor chip.
  • the position of the optical fiber is fixed in the mounting area, and the semiconductor chip is mounted on the substrate.
  • Ultraviolet rays pass through the optical fiber embedded in the resin between the chip and substrate to cure the uncured resin between the chip and substrate.
  • 6-9187 discloses that a plurality of window holes are provided in a sample table on which a sample to be heated is placed, and the tip of an optical fiber is inserted into each of the window holes, and the optical fiber is An infrared light source whose supply amount can be arbitrarily controlled is provided at the rear end of the sample, and a heating device that improves the uniformity of the temperature distribution of the sample and a CVD device that requires heating are disclosed.
  • the problem to be solved by the present invention is to provide a specific method and apparatus for actually heating a semiconductor substrate in an actual clean room.
  • the present invention provides a semiconductor substrate processing stage installed in a clean room in which the temperature and humidity are controlled in a clean atmosphere and the interior of which is kept substantially vacuum, and a clean room thermally isolated from the processing stage.
  • heating energy generating means installed in a place having an atmosphere different from that of the room; power supply means for supplying power to the heating energy generating means; power control means for controlling the power supplied to the power supply means; Heating energy generating means and processing stages
  • a semiconductor substrate processing apparatus comprising: a heating energy transport medium connecting a heating energy transport medium comprising a plurality of optical fibers having a predetermined length; are opposed to the heating energy generating means, the other end face portions of the plurality of optical fibers are opposed to the semiconductor substrate placed in the processing stage, and One of the end face portions is bundled together, and the other end face portion is spaced apart so as to substantially evenly cover the surface of the semiconductor substrate.
  • a semiconductor substrate processing method and apparatus are provided in which heating energy is incident and energy emitted from the other end surface is irradiated
  • the heating energy generating means is a lamp light source, in particular, the light used for heating the substrate is a sharp emission spectrum whose main component is light energy of a selected wavelength that can be absorbed by the substrate to be processed. It is best to use a light source with a torque.
  • the present invention includes a processing stage for a plurality of semiconductor substrates installed in a clean room, and a heating energy generating means thermally isolated from the processing stage and installed in a place having an atmosphere different from that of the clean room. , provides an apparatus for processing semiconductor substrates that are connected n:1 by a heating energy transport medium.
  • a plurality of optical fibers are arranged substantially in parallel, and the distance between adjacent optical fiber end face portions or the energy emitted from the end face portions of the optical fibers to the semiconductor substrate is measured.
  • a semiconductor substrate processing method and apparatus that satisfies hZD ⁇ 1.1, where D is the distance between the centers of the spots, and h is the distance between the end surface of the optical fiber and the semiconductor substrate.
  • the arrangement density of the optical fibers arranged in the peripheral part of the semiconductor substrate is higher than the arrangement density of the optical fibers arranged in the central part of the substrate.
  • the present invention provides a cooling means for keeping the light transport medium at 200° C. or less and suppressing the light transport loss due to the change in the light absorption wavelength characteristics due to the temperature rise to about 100 dB/km or less.
  • the present invention reduces the energy density of the light energy transported in the light transport medium to 10 kW/mm 2 or less to suppress the light transport loss to about 100 dBZ km or less, or the irradiation light transported in the light transport medium.
  • a semiconductor substrate that heats the substrate by transporting the light emitted from the light source by suppressing the light transport loss to about 100 dBZ km or less by reducing the light intensity density of the semiconductor substrate to 10E7 lumen Z mm2 or less.
  • a processing method and apparatus are provided.
  • the present invention is a semiconductor substrate processing apparatus characterized in that a plurality of optical fibers are connected in series, and the core diameter of the optical fiber is the same or larger as it goes from the light incident side to the light emitting side to the substrate. It provides
  • the present invention is a semiconductor substrate processing apparatus in which the energy transport medium is installed in a substantially straight line under the floor of the clean room, is bent substantially directly below the processing stage, and is guided to the processing stage. It provides
  • the semiconductor substrate processing means is provided with a light transmission window for separating the substrate placed inside the processing means from the space inside the processing means and the space outside the processing means, and the end portion of the optical fiber is light transmission. Placed facing each other in the vicinity of the window, light passes through the light transmission window.
  • a method and apparatus for treating semiconductor substrates by irradiation is provided.
  • the heating energy transport medium is composed of a plurality of optical fibers having a predetermined length, and a fiber for light amount monitoring is provided along the plurality of optical fibers, and based on the monitored light amount.
  • a power control means controls power supplied to a power supply means to achieve a desired amount of light.
  • a conical condensing rod is provided at the tip of the starting end surface of each of the plurality of optical fibers, and the conical condensing rod has a conical hollowed-out central portion.
  • a method and apparatus for processing a semiconductor substrate in which the thickness of the glass is substantially equal between the time when the light enters and is led into the fiber, and the outer and inner reflecting surfaces are parallel to each other. It is.
  • the heating energy transport medium is composed of a plurality of optical fibers having a predetermined length, and the end surfaces of the plurality of optical fibers are partially inserted and coupled into the housing of the semiconductor substrate processing apparatus.
  • a light introduction rod is arranged at the tip of each end surface portion, and a semiconductor substrate processing method and apparatus are provided in which the substrate is irradiated with the light of the optical fiber.
  • FIG. 1 is a cross-sectional view of one production line in a semiconductor manufacturing process to which the light transport type substrate heating apparatus of the present invention is applied
  • FIG. FIG. 3 is an apparatus configuration diagram showing that a lamp is directly installed in a processing apparatus including a heat treatment process and the apparatus is installed in a clean room
  • FIG. Fig. 3(a) is a sectional view parallel to the axial direction of the heating lamp
  • Fig. 3(b) is a sectional view of the heating lamp.
  • FIG. 4(a) is an example of semiconductor manufacturing equipment.
  • FIG. 4(b) is a detailed cross-sectional view of the apparatus when the processing apparatus including the substrate heating process by light transport of the present invention is applied to all CVD apparatuses
  • FIG. 5(a) is an enlarged view of the vicinity of the optical fiber end surface for explaining the incidence of light on the end surface of the optical fiber 130
  • FIG. 5(b) is a
  • FIG. 6 is a partial cross-sectional view of a rod having a rod
  • FIG. 6 is a diagram specifically showing the absorption wavelength characteristics of the optical fiber used in the present invention, that is, the characteristics of light transport loss at each wavelength.
  • FIG. 7 (a) is an explanation for studying how the illuminance distribution on the substrate changes when the distance D between the light spot centers (between the optical fibers) and the distance h between the light source and the substrate are changed.
  • FIG. 7(b) is a diagram showing the relationship between the variation in illuminance and the distance D between the light sources and the distance h between the light source and the substrate
  • FIG. 11 is an explanatory diagram of the case of dividing into two, FIG. 11 is a cross-sectional view of the end face and the connection part when n optical fibers are connected in series, and FIG. 12 is a Si wafer
  • FIG. 13 is a diagram showing the absorption wavelength characteristics of the lamp
  • FIG. 13 is a diagram showing the emission spectrum of a lamp specifically used as an embodiment of the present invention
  • FIG. 15 shows the emission spectrum of a metal halide lamp specifically used as another example
  • FIG. FIG. 16 is a diagram showing the emission spectrum of the lamp
  • FIG. 16 shows lamp radiant light when a metal halide lamp is used as an embodiment of the present invention.
  • FIG. 17 is a diagram showing a condensing system
  • FIG. 17 is a diagram showing a condensing system
  • FIG. 17 is a diagram for effectively condensing a ring-shaped luminance distribution with the center of the two bright spots of the lamp as the focal point in the condensing system of FIG.
  • Fig. 18 is a diagram showing the optical system of the lamp
  • Fig. 18 is a block diagram of a system for monitoring the lamp light intensity and feedback control of the lamp power supply
  • FIG. 20 is a conceptual diagram of distributing and supplying light to a plurality of heat treatment apparatuses
  • FIG. 20 is a cross-sectional view showing an example of a heat treatment apparatus for heating a wafer with light emitted from a fiber. Best Mode for Carrying Out the Invention
  • the heating energy source is not limited to light, but in the following examples, an example using a light source lamp as the heating energy source will be described. Heating a workpiece by delivering light from a remote location is described in the aforementioned patent publications.
  • each optical fiber Infrared light emitted from a halogen lamp which is normally used, has a power of about 1 kW.
  • Heat generation, a decrease in the transmittance of the optical fiber due to the heat generation, and further heat generation and loss due to the decrease in transmittance are repeated, eventually leading to a catastrophic result such as thermal destruction of the optical fiber.
  • the optical fiber is protected by a resin such as plastic, a serious situation such as a fire due to ignition may occur. There are many tasks that must be done.
  • not only as a means for heating the substrate but also in the method described in Japanese Patent Publication No.
  • each optical fiber needs a seal for isolating the space inside the heat treatment apparatus in which the substrate is set from the outside of the apparatus.
  • a further problem of the present invention is how to arrange the optical fiber with respect to the substrate in order to heat the substrate uniformly and quickly to a desired temperature with little heat loss. It is to solve what the heating method should be considering the loss and the loss at the time of heating light transportation.
  • a high-density light quantity that has not been used in the past is incident on the optical fiber, and the loss in the optical fiber is minimized during transportation, eliminating the risk of heat generation in the optical fiber.
  • the present invention transports light from a light source isolated from the clean room to the heat treatment stage through an optical fiber.
  • the light source has a heating lamp inside, and the light from it is collected and transported to the heat treatment device by an optical fiber.
  • the light emitted by the lamp is focused by a focusing optics onto an area smaller than the core diameter of the optical fiber or the outer diameter of the optical fiber bundle. and is injected into the optical fiber.
  • a plurality of optical fibers are terminated in the vicinity of the light irradiation window so as to face the light irradiation window. radiates toward the substrate through and heats the substrate.
  • the light is emitted by irradiating a spot with a diameter equal to or slightly smaller than the diameter of the core on the end face of the fiber. Also, the loss of the transported light is suppressed to about 100 dBZkm by setting the limiting incident angle to 40 degrees or less.
  • the substrate temperature distribution is desirable to be within ⁇ 5% in order to satisfy standard conditions such as film thickness after substrate heat treatment, and the variation in illuminance distribution should be suppressed within ⁇ 10%.
  • D the distance between the light sources or the distance between the light spots irradiated on the substrate
  • h the distance between the light source and the substrate.
  • the temperature distribution uniformity of the substrate can be improved.
  • the heat released from the wafer is the greatest at the peripheral portion. Therefore, the uniformity of the wafer temperature distribution is improved by maximizing the amount of heat applied to the outer peripheral portion of the wafer.
  • the center of the light spot from the optical fiber is arranged at the vertex of a regular polygon that is in contact with the outer periphery of the wafer and is formed by the number of optical fibers. .
  • the fiber is also cooled by providing a jacket through which cooling water flows to generate heat due to heat loss in the optical transport path from the light source to the heating stage.
  • a sharp peak whose main component is an emission distribution between about 0.6111 and 1.0 m is used as a heating light source.
  • a lamp with a square emission spectrum Use a lamp with a square emission spectrum.
  • FIG. 1 is a cross-sectional view of one manufacturing line in a semiconductor manufacturing process to which the light transport type substrate heating apparatus of the present invention is applied.
  • the light source is installed outside the clean room, and only the energy required to heat the substrate is selected in advance in the light source to eliminate unnecessary heat generation inside the equipment and inside the clean room.
  • FIG. 10 is a blunt configuration diagram showing that the divergence of energy is suppressed as much as possible. Even if the light source is installed at a location away from the clean room, the greater the distance, the greater the heat loss during light transportation, so it is not limited to a certain distance range. Naturally. What is necessary is that the light source section and the substrate processing section are thermally shielded.
  • a processing apparatus 100 including a heat treatment process to which the present invention is applied is clean.
  • the clean room is partitioned by a work area partition wall 250 into an equipment installation area 210 with a cleanliness level of class 100 to 1000 and a work area 220 with a cleanliness level of class 10 or lower. there is This working area partition wall 250 is not an essential component in the present invention, and may be provided as required.
  • the clean room 200 has a HEPA filter (High Efficiency Particulate Air filter) 610 on the ceiling and a grating 500 on the floor so that downflow is always formed. Clean air is supplied by an air conditioner 600.
  • the clean room has a clean air supply space 230 above the equipment installation area and work area, and an underfloor area 240 below the grating floor.
  • the underfloor area 240 is used as a space for installing piping for supply and discharge of electricity, water, etc. required for semiconductor manufacturing.
  • a light source 300 as means for heating a semiconductor substrate in a processing apparatus 100 including a heat treatment process is arranged separately from the clean room.
  • the light source is internally provided with a heating lamp 310, from which light is collected and transported by an optical fiber 130 to a processing apparatus 100 including a heat treatment process.
  • the light source is supplied with power from a lamp power source 700 (which includes power supply means and power control means, not shown) via a power cable 710, and cooling water is circulated from a cooling water circulation device 800. Cooling water is supplied through the pipe 810.
  • the light emitted by the heating lamp 310 is diverted from the core diameter of the optical fiber 130 or the outer diameter of the optical fiber bundle by a condensing system such as a reflecting mirror and a lens installed in the light source 300.
  • the light is condensed into a small area and is incident on the optical fiber.
  • the condensed radiant light for heating the substrate is transported via the optical fiber 130 to the processing equipment 100 including the heat treatment process installed in the clean room 200, and the heat treatment process is carried out.
  • a substrate placed in a processing apparatus 100 including Here, the optical energy that did not contribute to substrate heating is The amount of heat released into the clean room 200 and absorbed by the air conditioner 600 is extremely small.
  • the light source unit 300 uses a heating lamp 310 that emits only the light energy of the wavelength component necessary for heating the substrate, or uses a filter to minimize the loss in the optical fiber 130.
  • the heat radiation from the heat lamp 310 in the light source 300 is cooled by the cooling water circulation device 800, but the light source 300 is kept in a clean room such as 200. Since it is not installed in a place that requires temperature control, there is no particular need for cooling by the air conditioner 600.
  • FIG. 2 is a device configuration diagram showing that a lamp is directly installed in a processing device including a conventional heat treatment process and the device is installed in a clean room.
  • a processing apparatus including a conventional heat treatment process it is possible to heat a substrate placed in a vacuum or a gas atmosphere different from the atmosphere by using a window material such as a quartz plate that transmits infrared rays, and at the same time, the space in which the substrate is placed can be separated from the outside air.
  • the light source was installed directly on the side facing the substrate with respect to the window material through the window material for shielding.
  • FIG. 2 devices and parts similar to those in FIG. 1 are explained using the same attached numerals.
  • a substrate heating lamp 910 is arranged inside a processing apparatus 900 including a heat treatment process installed in a clean room 200 .
  • the heating light source lamp 910 that is conventionally used is a halogen lamp, and as will be described later, it has an emission spectrum that includes components with wavelengths considerably longer than the absorption region of the Si wafer.
  • the energy used to heat the Si wafer is about 5% of the power energy input to the halogen lamp, and the other 95% is wasted heat, and the circulating cooling water in the heating device is 800 or radiated into the clean room and absorbed by the air conditioner 600 of the clean room 200.
  • This In addition to the electric power equipment 700 for the main body of the heating equipment, it will be equipped with an air conditioning equipment 600 for suppressing the temperature rise in the clean room 200, which is extremely inefficient production equipment.
  • the energy substantially used for heating the substrate is effectively selected in advance in the light source unit and transported by the optical fiber. Since the power energy input to the lamp is suppressed to about 5%, there is almost no heat radiation into the clean room. Therefore, the air conditioning equipment for suppressing the temperature rise in the clean room can be made more compact than before.
  • the heating lamp used in the embodiments of the present invention is a high-pressure sodium lamp or a metal halide lamp, which has a luminous spectrum matching the absorption wavelength of the silicon substrate, and the luminous efficiency itself. Approximately 30% of the total heat dissipation is about 30%, so as a result, the amount of wasted heat dissipation can be reduced to about 110% compared to the conventional method.
  • FIG. 3 is a cross-sectional view illustrating the state of condensing the lamp and the radiant light of the light source part of the present invention, (a) is a cross-sectional view parallel to the axial direction with respect to the heating lamp, (b ) is a sectional view perpendicular to the axial direction with respect to the heating lamp.
  • a high-pressure discharge lamp called a HID lamp (High Intensity Discharge Lamp) such as a high-pressure sodium lamp or a metal halide lamp is used unlike a conventional halogen lamp.
  • HID lamp High Intensity Discharge Lamp
  • the lamp of the light source unit 300 shown in FIG. 3 has a rod-shaped luminous body, and emits light radially from the center of the rod, which is divided into the cross section of the core of the optical fiber 130 and the substance by an appropriate optical system.
  • the light is focused on a spot of approximately the same or slightly smaller area.
  • an ellipse or a paraboloid A convergent luminous flux 330 is produced by a reflecting mirror 320 molded into a shape and water-cooled, and a condensed luminous flux 350 to one point is produced by a cylindrical lens 340.
  • the shape of the cylindrical lens 340 By making the shape of the cylindrical lens 340 to have a lens action also in the longitudinal direction, it becomes possible to collect light from such a rod-shaped light emitter to one point with one optical system. .
  • a converging light beam is condensed on the end surface of the optical fiber 130 by the second cylindrical lens. It is also possible to obtain the light to enter the optical fiber.
  • the cooling means for the light source unit 300 is provided by introducing cooling water from the cooling water circulator 800 into the cooling water jacket 810 formed behind the reflecting mirror 320. achieved.
  • a pair of cooling water jackets 820 are formed above and below the converging light flux 330, and cooling water is introduced into them to cool and at the same time hold the cylindrical lens 340.
  • optical fibers are arranged in a line and the above-mentioned sheet A configuration in which parallel light beams are incident may be used, or a convergent light beam may be incident on the end face of a bundle of optical fibers.
  • metal halide lamps such as those shown in FIGS. 16 to 18 are suitable for the method and apparatus of the present invention. Details of this will be described later.
  • FIG. 4(a) is a detailed cross-sectional view of a CVD apparatus as an example of a semiconductor manufacturing apparatus when the processing apparatus including the substrate heating process by light transport of the present invention is applied.
  • (b) is an enlarged detailed cross-sectional view of the end face portion of the optical fiber.
  • 401 is a CVD reactor
  • 402 is a gas chamber
  • 403 is a semiconductor substrate
  • 404 is a light irradiation window
  • 405 is an O-ring seal
  • 406 is a non-seal.
  • An active gas introduction pipe, 130 an optical fiber
  • 408 a reflector and 409 a connector.
  • a silicon wafer is used as the substrate 403, and this wafer is placed inside a water-cooled CVD reactor 401 with the wafer surface facing upward.
  • 402 is a gas shower having a water cooling mechanism, CVD gas is sprayed onto the wafer 403, and the CVD gas is exhausted from an exhaust port.
  • an O-ring seal 405 is installed on the contact surface with the light irradiation window 404 made of quartz in order to keep the inside of the CVD reactor 401 airtight.
  • Inert gas is introduced into the chamber to suppress excessive film formation.
  • a plurality of optical fibers 130, 130 terminate in the vicinity of the light irradiation window 404 and face it.
  • radiated light from the heating light source 300 transported via the optical fiber 130 is transmitted through the optical fiber 130 fixed by the connector 409 to the water-cooled reflecting mirror.
  • the wafer 403 is heated by being irradiated from the end face toward the substrate 403 through the light irradiation window 404 made of quartz.
  • a CVD film is formed by bringing the CVD gas into contact with the heated wafer.
  • this embodiment shows the case of application to a CVD apparatus, it can also be used as a thermal annealing furnace by evacuating the inside of the reactor or introducing an inert gas or hydrogen gas without introducing the CVD gas. It can also be used as a thermal oxidation furnace by introducing oxygen gas instead of CVD gas.
  • FIG. 5(a) shows an enlarged view of the vicinity of the end face of the optical fiber 130 in order to explain the incidence of light on the end face of the optical fiber 130.
  • FIG. The optical fiber 130 consists of a coating layer 131, a clad 132 and a core 133 from the outer periphery.
  • Fig. 3 the entire optical system for condensing light from the light source has been explained. A method of irradiating a spot with a small diameter and making it incident is efficient. Also, at this time, as shown in the figure, it is necessary to reduce the incident angle of light in consideration of the method of condensing light from the light source.
  • a bundle which is a bundle of many fibers
  • a compound eye lens is installed on the end face of the optical fiber, and the incident light from the light source is condensed inside the core cross section to reduce the loss at the bundle end face and then onto the bundle. It may be condensed. It doesn't necessarily have to be a compound eye type lens. It is also possible to form a lens portion by molding or the like on the end surface of each optical fiber. Furthermore, by using fibers with a shape that minimizes the ineffective cross section that occurs between the fiber cores when the cross-sectional shape of the optical fibers is bundled into a square or regular hexagon, A method of condensing light on the bundle after reducing the loss at the end face of the bundle may also be used.
  • the light emitting part can be a point light source as much as possible. Close lamps are preferred. However, a lamp having an optimum emission wavelength and high luminous efficiency for heating a Si wafer is not necessarily a point light source.
  • Light source heating lamp 3 1 0 The rear part is equipped with an ellipsoidal mirror 320 (cold mirror) with a relatively small eccentricity that reflects the light from the lamp forward without spreading it too much.
  • the surface of this elliptical mirror 320 is specially coated to reflect light (unnecessary infrared light) in the emission wavelength region longer than 1.2 m, which is the absorption band of Si.
  • a forward reflecting mirror 321 having a spherical surface is used to reflect backward the light emitted from the heating lamp 310 and reflected from the reflecting mirror 320 and spread over a desired angle. Efficiency can be further improved by providing An opening 322 for extracting light is formed in the central axis of the forward reflecting mirror 321.
  • These elliptical mirrors 320 and forward elliptical mirror 321 are provided with coolers 810, 810 to prevent overheating. As shown in the figure, the elliptical mirror (reflector 310) is hit by a perpendicular drawn from the focal point (the brightest part of the arc or the center of the arc) to the major axis of the ellipse (light transport axis).
  • the NA of the optical fiber that captures the condensed light is 0.53, the diameter of the fiber is 7 mm (bundle type), the lamp is a metal halide lamp (575 W), and the elliptical mirror (between focal points) is used.
  • the metal halide lamp used in the device of the present invention has an emission wavelength region shorter than 1.2 m, which is the absorption band of Si, and emits about three times as much light as the conventionally used halogen lamp. Because of its efficiency, it is suitable as a light source for heating Si wafers. For this reason, if an elliptical mirror with two focal points is used to form an image at the other focal point, the light will not converge to a single point and form a ring-like shape. luminance distribution appears (see Fig. 5 (b)). In FIG. 5(b), shaded areas indicate areas with high brightness. This ring-shaped brightness distribution corresponds to the high-brightness portions (two places) between the lamp electrodes.
  • a conical light-collecting end with a hollowed-out central portion is provided. I came up with 324 words that I had.
  • the condensing conical mouth pad 324 is in contact with the bundle end face of the ⁇ 7 optical fiber 130 on the output side. It should be noted that the dimensions of each part, especially the angles, are not drawn accurately in the illustration.
  • this condensing conical rod 324 since the thickness of the glass is substantially equal and the inner and outer reflecting surfaces are parallel during the period from when the light is incident to when it is guided into the fiber, Even if the light incident on the aperture is reflected, it is possible to suppress the increase in the angle of reflection that occurs at each reflection. It is possible to convert the image into a circular condensed image with the ring width as the radius. Therefore, when the conical rod of the present invention was used, the light collection efficiency could be improved by about 10 times compared to when it was not used.
  • FIG. 17 shows an example using this truncated conical mouthpiece. Since the light source portion is substantially the same as that of FIG. 16, no particular explanation will be given, but the same parts are given the same attached numerals.
  • An opening 322 for extracting light is formed in the central axis of the forward reflecting mirror 321, and preferably, an optical lens means 323 for reducing NA is formed in the opening 322 (preferred embodiment as a concave lens).
  • These elliptical mirrors 320 and forward elliptical mirror 321 are provided with coolers 810, 810 to prevent overheating. Furthermore, it is possible to provide lamp cooling means 820 for cooling the heating lamps 310 .
  • the lamp cooling means 820 be configured so that cooling air can be supplied from the outside. by this Therefore, by changing the flow rate of the cooling air according to the desired output of the heating lamp 310 and adjusting the lamp temperature from the outside, the responsiveness of the light amount from the lamp (to control the lamp light amount, When the supplied power is changed, it is possible to improve the followability of the lamp light amount to it. In addition, by utilizing this high responsiveness, it is possible to rapidly decrease the light intensity of the lamp by forcibly cooling the lamp rapidly during dimming.
  • the light emitted forward from the light source is applied to the condensing aperture pad 324 having the above-described structure, and a mechanical shutter mechanism 325 can be provided in the middle thereof.
  • This shutter mechanism 325 completely shuts off the transported light path, but closing the shutter when the lamp is bright increases the heat load on the shutter. It is preferable to close the shutter after falling to .
  • LC low-dust liquid crystal
  • a voltage controlled shutter (not shown) can also be used.
  • the LC element is made by sandwiching LC with refractive index anisotropy and polymer between glass coated with a transparent conductive film.
  • the light is scattered due to the difference in refractive index between the polymer and the LC.
  • the molecular light distribution is aligned in the direction of the electric field, and the refractive index matches that of the polymer, so the light travels straight (transmits). Therefore, in the uncharged state, the light incident on the fiber is less than 3% of the charged light due to irregular reflection by the LC element, and L
  • the C element plays the role of a shutter.
  • considering the durability and heat resistance of LC molecules it is necessary to reduce the lamp output as much as possible when the shutter is closed. By using such a shutter function, it is possible to prevent thermal damage to the fiber end face.
  • the condensing aperture pad 324 is cooled by a cooler 830 on its outer circumference.
  • the light efficiently condensed by the condensing rod 324 enters the optical fiber 130 .
  • the heating lamp is a 575 W metal halide lamp, and 19 fibers with an NA of 0.53 and a core diameter of 0.14 are cut into a circle of about 0.7 mm.
  • the light was focused on the bundled end.
  • the metal halide lamp emits light
  • the distance between the two points with the highest luminance is about 5.2 mm in the case of the discharge between the electrodes of 7 mm.
  • About 60% of the imaged light quantity is contained in a ring with an outer diameter of 0.15 mm and an inner diameter of 0.8 mm (ring width is 3.5 nun).
  • ring width is 3.5 nun.
  • only about 6% of the light is collected on a circle of ⁇ 7. Therefore, by inserting the above-mentioned conical mouth pad between the end of the 07 fiber and the focal point of the ellipse, we were able to improve the light collection efficiency by about 10 times.
  • the light intensity of the condensed light is not distributed in the center of the circle, but rather on the circumference of the circle. is.
  • the 19 fibers instead of bundling the 19 fibers into a circular shape of about 07, they are arranged on a circle of ⁇ 11.5 where the distribution of the imaged light is the highest, resulting in a circular shape.
  • the light collection efficiency can be improved more than bundling.
  • the ratio of the light intensity irradiated on the circumference of ⁇ 11.5 to the average light intensity irradiated in the circle of ⁇ 7 is approximately 3x more light collection efficiency was able to improve
  • the reflection loss between the fiber core material and the covering material is defined as R(0) and is expressed by the following equation (1.2).
  • Equation (1.3) the light transmittance T(0) at the incident angle ⁇ can be expressed by Equation (1.3).
  • L, d, and ⁇ A in order to suppress the loss of the light of the incident angle ⁇ to about 100 dBZkm, we propose the permissible range of the amount of loss caused by the above three respectively.
  • ⁇ is the extinction coefficient
  • L is the fiber length
  • d is the core profile
  • 0 is the angle of incidence of the input light
  • A is the reflection loss rate for one reflection.
  • L In order to satisfy ⁇ ( ⁇ ) ⁇ 0. 0 1 (loss due to absorption by the core material is 1% or less), L must satisfy the relationship of formula (1.4) (however, ⁇ 0 ⁇ 2 and vinegar ).
  • L d and S In order to satisfy R(5) ⁇ 0.01 (reflection loss of 2% or less), L d and S must satisfy the following formula (1.5).
  • FIG. 6 is a diagram specifically showing the absorption wavelength characteristics of the optical fiber used in the present invention, that is, the characteristics of light transport loss at each wavelength. However, it shows that light transport is possible with relatively little loss between about 0.6 ⁇ m and 1.0m.
  • the loss increases by 4 dB, and even if the temperature rises below this temperature, the power to settle down to the equilibrium temperature below 200 °C due to natural cooling. Temperature rises. Therefore, keeping the temperature in the optical fiber below 200°C is a very important condition.
  • the temperature in the optical fiber at the branching point below 200° C. corresponds to suppressing the optical transport loss to around 100 dBZkin or below based on the loss calculation described later.
  • the energy density of the light energy injected into the optical fiber to satisfy this condition is equivalent to suppressing it to 10 kW/mm 2 or less.
  • suppressing the light energy density to 10 kW/mm 2 or less corresponds to suppressing the light amount density of the irradiation light to 10E7 lumen/mm 2 or less.
  • Fig. 7 (a) is an explanation for examining how the illuminance distribution on the substrate changes when the distance D between the light spot centers (between the optical fibers) and the distance h between the light source and the substrate are changed. It is a diagram.
  • the relationship between the distance D between the light sources (between the optical fibers) and the distance h between the light source and the substrate is obtained to keep the variation in the illuminance distribution within a certain range.
  • the surface light source can be regarded as a point light source.
  • T(0) is a function determined by the structure of the optical fiber used as the light source, and represents the transmittance for incident light in the ⁇ direction (equation 1.3).
  • the irradiance E(0) in the direction 0 from the light source at dS is given by equation (2.2).
  • the variation in the illuminance distribution is taken into consideration.
  • the illuminance of a point on the square can be obtained by adding the illuminance from the two light sources using Equation (2.3), assuming illumination from only two fibers.
  • the square is divided into 25 areas so that the heat conduction on the substrate can also be considered, and the average value of the illuminance in each area is obtained. This means that the unevenness of illuminance in one area is smoothed out by heat conduction.
  • Fig. 7 (b) shows the relationship between the variation in illuminance and the distance D between the light sources and the distance h between the light source and the substrate.
  • the temperature distribution of the substrate be within ⁇ 5% in order to meet the standard conditions such as film thickness after substrate heat treatment. Therefore, the variation in illuminance distribution must be suppressed within ⁇ 10%.
  • the light spot from the optical fiber is placed inside the regular polygon that is in contact with the outer periphery of the substrate and is formed by the number of optical fibers arranged on the outer periphery of the substrate. By aligning the center, the substrate can be heated with maximum heating efficiency without reducing the uniformity of the temperature distribution of the heated substrate.
  • the arrangement density of light spots from the optical fiber arranged on the outer periphery of the substrate is higher than the arrangement density of light spots from the optical fiber arranged in the central portion of the substrate, the temperature distribution uniformity of the substrate can be improved.
  • the center of the spot of the light emitted from the optical fiber onto the substrate is located on the polygon circumscribing the outer circumference of the substrate.
  • the optical fiber is arranged so as to be located inside, and the substrate is heated by maximizing the heating efficiency without reducing the temperature distribution uniformity of the heated substrate.
  • optical fibers to be arranged on the outer circumference For example, if the number of optical fibers to be arranged on the outer circumference is 6, 6 optical fibers are arranged at the vertexes of a hexagon (preferably a regular hexagon) that circumscribes the outer circumference of the board, and 1 is placed at the center of the board. of optical fibers.
  • the uniformity of the temperature distribution of the substrate can be improved.
  • the distribution density of the optical fibers can be arranged closer to the outer circumference, or the light source can be selected so that the light amount of the light spot from one optical fiber increases toward the outer circumference.
  • the light spot emitted from the optical fiber should all be contained within the wafer.
  • the maximum temperature is reached, and the uniformity of the temperature distribution of the wafer is significantly impaired.
  • the uniformity of the wafer temperature distribution can be improved only by maximizing the amount of heat applied.
  • a positive multiplicity of points in contact with the outer periphery of the wafer formed by the number of optical fibers is required.
  • the amount of light is about 20% of the emitted light energy.
  • Figures 9 and 10 show examples in which light spots are arranged at the vertices of a regular n-sided polygon where n is 6 and 12, respectively.
  • Significant improvement. Therefore, the heating efficiency can be further improved by installing a reflecting mirror 408 as shown in FIG.
  • adjacent spots of the plurality of light spots irradiated on the substrate are not overlapped with each other, but the arrangement of the light spots must be such. It doesn't have to be. What is necessary is the relationship between the amount of heat given to the substrate from the irradiated light spot, the amount of heat escaping from the substrate by heat dissipation, and the amount of heat given to the substrate by the heat in the chamber in which the substrate is held. The point is that the entire substrate is heated uniformly. For this reason, although not shown, it is also possible to irradiate a plurality of light spots partially overlapping each other.
  • the spots can be arranged so that the degree of overlapping of the spots is increased toward the outer periphery of the wafer and decreased at the inner periphery. This is because, as mentioned above, heat escapes more easily at the outer periphery of the wafer. 4. How to control the temperature of the board surface
  • the lamp power supply is controlled after monitoring the lamp light intensity and grasping the lamp output, and the uniform stabilization of the temperature of the heating substrate is achieved.
  • FIG. Fig. 18 (a) shows the overall configuration of this control method
  • Fig. 18 (b) shows the lamp light amount monitoring fiber in that case between the bundled fibers.
  • the attached numbers are the same as those in Fig. 17.
  • the light emitted from the opening 322 of the forward reflecting mirror 321 is directed to the fiber 130 .
  • One of the noddle-type fins 130 is used as the lamp light intensity monitor 730.
  • the lamp light intensity monitor fiber 730 is directed toward the light source with its end aligned with the light transport fiber, and sends the irradiated light to the power meter 710 .
  • the noometer 710 monitors the amount of irradiation light.
  • the monitor light quantity is input to the control computer 720, the desired light quantity is compared with the monitored light quantity, and the lamp light source power supply 700 is feedback-controlled based on the comparison.
  • the fiber for lamp light intensity monitor needs only to grasp the relative light intensity, the fiber diameter may be small. Therefore, it is possible to utilize the non-effective area portion of the heating optical transport bundle (large fiber diameter) and incorporate the monitoring fiber.
  • the emitted light from the monitor fiber is measured with a power meter.
  • This technology can be used not only for controlling substrate heating temperature, but also for the gradual reduction of lamp light intensity due to aging of the lamp.
  • the lamp light quantity attenuates with the lighting time. For example, in the case of a metal halide lamp, after 750 hours of lighting, the amount of light becomes 70% of the initial amount. Therefore, if the substrate heating temperature is controlled by the open loop, the change in the lamp light intensity over time transformation cannot be ignored. Therefore, as described above, it is effective to monitor the temporal change of the lamp light intensity and control the lamp output.
  • the light source 300 is arranged at the same level as the underfloor area 240 of the clean room 200, and the optical fiber 130 is arranged linearly in the underfloor area.
  • the semiconductor processing chamber and the heating unit for it are arranged in a ratio of 1:1.
  • heat can be supplied from one heating unit to a plurality of processing chambers.
  • the total facility distance of the optical fiber for light transport can be shortened, and a plurality of heating units (not shown) are arranged to configure the processing chamber to heating unit in an n:n ratio.
  • the total heat treatment time for the entire semiconductor process is Efficient use of the light source lamps in consideration of the total number of lamps reduces the number of times the lamps flicker and extends the life of the lamps, as well as reducing the number of lamps. 6. How to cool heat generated due to heat loss in the light transport path from the light source to the heating stage
  • the cooling water from the cooling water circulator 800 can be piped to also cool the installed fibers (not shown). Since the bent portion 135 generates a large amount of heat, it is particularly preferable to cool it.
  • FIG. 11 shows an enlarged cross-sectional view of an end face and a connecting portion when n optical fibers are connected in series.
  • the core diameter of the optical fiber is made the same or larger as it goes from the light incident side to the light emitting side to the substrate, that is, as it goes downstream in the light flow. If the fiber is made smaller or the center of the axis is shifted even if the diameter is the same, loss will be caused by the area where the fiber on the incident side does not touch the fiber on the emitting side at the spliced part, and a large amount of heat will be generated at the spliced part. will occur. This means that the amount of heat dissipated will be concentrated in the connector, which has a small heat capacity, and a serious situation equivalent to the heat generation of optical fibers will occur. 8. What kind of light should be used as a heat source?
  • Fig. 12 is a diagram showing the absorption wavelength characteristics of a Si wafer, where the vertical axis is the absorption coefficient - The horizontal axis indicates the wavelength. Since Si is a semiconductor, the incident wavelength is shorter than about 1.2 m, which corresponds to the bandgap, and longer than about 1.2 m, which corresponds to the intrinsic free carrier absorption region. The behavior with respect to light energy is completely different. That is, on the wavelength side shorter than 1.2 m, light is always converted into heat even at room temperature, but on the wavelength side longer than 1.2 m, the absorption coefficient changes depending on the temperature of the wafer, and the absorption coefficient changes depending on the wafer temperature.
  • a heating light source it is desirable to use a light source having a distribution only in wavelengths shorter than 1.2 m.
  • a light emission spectrum having characteristics close to a line spectrum or in other words, having a sharp-edged spectrum, has a sharp-edged emission spectrum. It is defined as light and used below.
  • the main component is the light emission distribution between about 0.6 m and 1.0 m as a heating light source, combined with the lamp wavelength that matches the absorption characteristics of the Si wafer. It is desirable to use a lamp with a sharp and sharp emission spectrum.
  • the optimal lamp type may change.
  • the light to be transported is generally considered to be a laser beam.
  • HID lamp of a high-pressure sodium lamp and a metal halide lamp which will be described later
  • a lamp having a sharp emission spectrum is used as a lamp of a heating light source.
  • FIG. 13 shows the luminescence spectrum of a lamp specifically used as an embodiment of the present invention, and the lamp is a high-pressure sodium lamp having a sharp luminescence spectrum as shown. Using.
  • FIG. 14 shows the emission spectrum of a lamp specifically used as another embodiment of the present invention. Using.
  • HID lamps high-pressure sodium lamps and metal halide lamps
  • the metal halide lamp has a sharp emission spectrum at approximately 0.85 m and 0.9 m, and a wide band emission spectrum centered at 0.5 m. It has a kutor. Therefore, when a metal halide lamp is used as a heating light source, a high-pressure sodium lamp has a large loss, but it can be manufactured so that the transport loss does not reach about 100 dBZkm or less.
  • FIG. 15 is a diagram showing an emission spectrum of a halogen lamp conventionally used for substrate heating, which is a comparative example of the present invention. As shown, it has a wide energy distribution that varies with the temperature of the illuminant according to Planck's blackbody radiation equation.
  • the emitted light is Although its peak wavelength shifts with body temperature, it has a very broad bandwidth from 0.4111 to 3111 when used at emission temperatures typically between 2500 and 4000 K. is wide and the loss in the optical fiber is significant. Also, the value of the loss is not constant because the peak wavelength shifts with the emission temperature, but at least all components with wavelengths longer than 1.1 m are lost, so the transport loss is 20% or more. Become. Also, even if it is transported by Yoshinba, there is little absorption by silicon wafers.
  • heat escape from the heated wafer is not particularly considered, for example, to keep a 5-inch Si wafer at 500°C in vacuum requires about 300 W, 1,000° C. In order to keep it at C, it is necessary to keep applying heat of about 2,000 W to the wafer. Calculating the heating efficiency such as the luminous efficiency of the lamp and the reflectance of the Si wafer, only about 5% of the energy input to the lamp contributes to the heating of the wafer, and it takes about 6 hours to maintain the temperature at 500 °C. In order to keep the kW at 1,000°C, a huge amount of energy of about 40 kW is input. But this This is because it is assumed that 100% of the radiant heat from the wafer escapes to the outside as heat. It is possible to improve the heating efficiency by supplying only the energy for maintaining the set temperature from the suppressed energy input port.
  • a quartz light beam is provided on the rear surface side of the wafer for blocking the atmosphere from the vacuum, as in the embodiment of the present invention described above.
  • a unit structure Fig. 4 (a) that can reflect most of the radiant heat from the wafer on the surface other than the light output part to the processing chamber is adopted (Fig. 4). 20 (b)).
  • a plurality of fiber light emitting units 410 are provided.
  • This fiber light emitting unit 410 is provided with a connector 409 for connecting the tip of each light transport fiber 130 to the processing device, and the tip of the optical fiber transmits light into the processing chamber.
  • a quartz rod 411 is provided to be introduced into the chamber.
  • the diameter of the quartz head is slightly larger than that of the optical fiber, and an O-ring is provided around it to block vacuum.
  • the surface 412 of the inner surface of the processing chamber other than the quartz rod is a mirror surface capable of reflecting most of the radiant heat in order to minimize heat escape due to thermal radiation from the wafer surface side.
  • the wafer facing surface 413 of the gas shower 402 provided above the wafer is a mirror surface capable of reflecting most of the radiant heat.
  • heat loss is cut by about 60% compared to when heat escape is not taken into consideration, and when kept at 500°C, it is about 2.4 kW. (Energy saving of about 3.6 kW), and energy input of about 16 kff 24 kW at 1,000 °C).
  • the latter method has a further improvement in thermal efficiency of about 10% due to the loss of reflection loss at the quartz window.
  • the use of fluorine-based rubber with a low refractive index further improves the heating efficiency.
  • the processing stage is arranged by transporting the heating energy from the heating energy generating means installed in a place thermally isolated from the semiconductor substrate processing stage by the heating energy transport medium. It does not dissipate a large amount of heat in the cleaning room that is not used to heat the substrate.
  • the light used for heating the substrate is made more efficient by using a light source having a sharp emission spectrum whose main component is light energy of a selected wavelength that can be absorbed by the substrate to be processed. It is possible to heat the substrate effectively.
  • a processing stage for a plurality of semiconductor substrates installed in a clean room and a heating energy generating means installed in a place thermally isolated from the processing stage are separated by a heating energy transport medium n: By connecting with 1, effective use of energy becomes possible.
  • the plurality of optical fibers are arranged substantially parallel, and the distance between the end surfaces of adjacent optical fibers or the distance between the centers of the energy spots irradiated from the end surfaces of the optical fibers onto the semiconductor substrate is defined as a constant distance.
  • D where h is the distance between the end surface of the optical fiber and the semiconductor substrate, hZD ⁇ l.
  • the optical spot from the optical fiber arranged on the outer periphery of the substrate By making the light quantity density or arrangement density of the light spot higher than the light quantity density or arrangement density of the light spots from the optical fiber arranged in the central part of the substrate, the temperature distribution uniformity of the substrate is improved, and the predetermined processing is performed. There is an effect that it is possible to easily realize uniform processing over a widest possible range on a semiconductor substrate of the type.
  • the optical transport medium since the optical transport medium is installed under the floor of the clean room, the optical fiber can be pulled out from the apparatus under the floor. It is disadvantageous to bend the optical fiber with a small curvature in order to efficiently transport as much energy as possible as in the present invention. has the effect of being able to reduce.
  • the light transport medium since the light transport medium is installed in a substantially straight line under the floor of the clean room, and is bent almost right under the processing stage and guided to the processing stage, it is possible to lay the most ideal optical fiber. This has the effect of enabling efficient transport of light energy.
  • the processing apparatus is provided with a light-transmitting window that isolates the space inside the apparatus from the space outside the apparatus, and the terminal end of the light-transporting medium faces the vicinity of the light-transmitting window.
  • the light transport medium is kept at 200° C. or less, and the light transport loss due to the change in the light absorption wavelength characteristics due to the temperature rise is suppressed to about 100 dBZkin or less, and the irradiation light from the light source is reduced. Since the substrate is heated during transport, loss is always kept low even when transporting a large amount of light energy, so damage to the There is an effect that there is no
  • the energy density of the light energy transported in the light transport medium is set to 10 kff / mm 2 or less, or the light intensity density of the irradiated light is set to 10E7 lumen / mm 2 or less, and the light transport medium is kept at 200 °C or less, and the light transport loss due to the change in light absorption wavelength characteristics due to the temperature rise is suppressed to about 100 dB Z km or less, and the irradiated light from the light source is transported to heat the substrate. Therefore, the fiber is not destroyed by excessive light energy, and the fiber is not overheated.
  • the radiated light from the heating light source when the radiated light from the heating light source is condensed and then incident on the end face of the optical fiber, the total reflection condition obtained from the refractive index of the core and the clad of the optical fiber and the light inside the optical fiber due to oblique incidence
  • the transport loss in the optical fiber is reduced to 100 dBZ Since the substrate is heated by transporting the irradiation light from the light source, the light transport energy in the fiber does not suffer excessive loss, and stable transport can be performed. Therefore, there is an effect that a predetermined process can be stably performed.
  • the light transport medium is configured by connecting a plurality of optical fibers in series, and the core diameter of the optical fiber is made the same or larger from the light incident side to the light emitting side toward the substrate. This has the effect of reducing the loss of light energy during transport at the connecting portion.
  • the present invention provides a semiconductor substrate processing stage installed in a clean room in which the temperature and humidity are controlled in a clean atmosphere, and a semiconductor substrate placed on the processing stage, which is isolated from the processing stage for heating.
  • a light source for generating heating energy installed in a place with an atmosphere different from that of the clean room, and a light transport medium for connecting the light source and the processing stage are provided for heating the substrate.
  • the object of the present invention is to provide a processing apparatus for a semiconductor substrate having a sharp emission spectrum whose main component is light energy of a selected wavelength that can be absorbed by the substrate to be processed.
  • the heating energy transport medium is composed of a plurality of optical fibers having a predetermined length, and a fiber for light amount monitoring is provided along the plurality of optical fibers, and based on the monitored light amount.
  • the substrate temperature can be controlled with extremely high accuracy by controlling the power supplied to the power supply means by the power control means in order to achieve the desired amount of light.
  • the present invention provides a conical shape in which the central portion is hollowed out in a conical shape at the tip of the starting end face of a plurality of optical fibers, and the thickness of the glass between the time when light is incident and guided into the fiber. Efficient light collection can be achieved by providing a conical condensing rod in which the distances are substantially equal and the outer and inner reflecting surfaces are parallel to each other.
  • the heating energy transport medium is composed of a plurality of optical fibers having a predetermined length, and the end surfaces of the plurality of optical fibers are partially inserted and coupled into the housing of the semiconductor substrate processing apparatus.
  • a light introduction rod is arranged at the tip of each terminal surface, and efficient light irradiation can be achieved by irradiating the substrate with the light of the optical fiber.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Selon l'invention, on installe une source de lumière destinée à chauffer une plaquette de semi-conducteur dans un endroit où l'atmosphère est différente de celle de la salle blanche où l'appareillage de traitement est installé, à l'extérieur de cette dernière. L'énergie lumineuse produite par la source de lumière est envoyée par l'intermédiaire d'une fibre optique, de sorte que la plaquette soit chauffée de manière homogène. La composante principale de la lumière émise par la source de lumière présente des longueurs d'onde qui sont absorbées efficacement par la plaquette. La répartition homogène de la température dans la plaquette permet d'assurer des traitements de haute qualité. De plus, l'utilisation de la fibre optique empêche la production d'une chaleur excessive dans la salle blanche. On réduit ainsi le coût d'équipement de la salle blanche, son coût d'exploitation, la taille de l'appareillage de traitement et de la salle blanche, et donc le coût de fabrication de la plaquette.
PCT/JP1995/000701 1994-04-08 1995-04-10 Procede et dispositif de traitement d'une plaquette de semi-conducteur WO1995028002A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP6/71050 1994-04-08
JP6/71051 1994-04-08
JP6/71052 1994-04-08
JP7105394A JPH07283096A (ja) 1994-04-08 1994-04-08 半導体基板の処理方法及び装置
JP7105294A JPH07283095A (ja) 1994-04-08 1994-04-08 半導体基板の処理方法及び装置
JP6/71053 1994-04-08
JP7105194A JPH07283091A (ja) 1994-04-08 1994-04-08 半導体基板の処理方法及び装置
JP7105094A JPH07283090A (ja) 1994-04-08 1994-04-08 半導体基板の処理方法及び装置

Publications (1)

Publication Number Publication Date
WO1995028002A1 true WO1995028002A1 (fr) 1995-10-19

Family

ID=27465312

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1995/000701 WO1995028002A1 (fr) 1994-04-08 1995-04-10 Procede et dispositif de traitement d'une plaquette de semi-conducteur

Country Status (1)

Country Link
WO (1) WO1995028002A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002099853A2 (fr) * 2001-05-31 2002-12-12 Motorola, Inc., A Corporation Of The State Of Delaware Support de tranche a commande de temperature et procede de commande de la temperature d'un objet sensiblement plat
CN109560035A (zh) * 2013-09-06 2019-04-02 应用材料公司 支撑组件和半导体处理系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126821A (ja) * 1983-12-14 1985-07-06 Matsushita Electric Ind Co Ltd 試料加熱装置並びに常圧ｃｖｄ装置および減圧ｃｖｄ装置
JPS6425985A (en) * 1987-07-20 1989-01-27 Anelva Corp Reduced-pressure vapor growing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126821A (ja) * 1983-12-14 1985-07-06 Matsushita Electric Ind Co Ltd 試料加熱装置並びに常圧ｃｖｄ装置および減圧ｃｖｄ装置
JPS6425985A (en) * 1987-07-20 1989-01-27 Anelva Corp Reduced-pressure vapor growing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002099853A2 (fr) * 2001-05-31 2002-12-12 Motorola, Inc., A Corporation Of The State Of Delaware Support de tranche a commande de temperature et procede de commande de la temperature d'un objet sensiblement plat
WO2002099853A3 (fr) * 2001-05-31 2003-02-20 Motorola Inc Support de tranche a commande de temperature et procede de commande de la temperature d'un objet sensiblement plat
CN109560035A (zh) * 2013-09-06 2019-04-02 应用材料公司 支撑组件和半导体处理系统

Similar Documents

Publication Publication Date Title
US6876816B2 (en) Heating device, heat treatment apparatus having the heating device and method for controlling heat treatment
US6437290B1 (en) Heat treatment apparatus having a thin light-transmitting window
US7949237B2 (en) Heating configuration for use in thermal processing chambers
KR100512345B1 (ko) 온도 측정 방법, 열처리 장치 및 방법, 그리고 온도 측정을 실행하는 컴퓨터 프로그램을 저장한 기억 매체
JP5338723B2 (ja) 加熱装置
WO2001027962A2 (fr) Appareil d'eclairage et procede d'utilisation efficace de la lumiere provenant d'une lampe a fenetre
JPH1056008A (ja) 基板加熱装置
US6825615B2 (en) Lamp having a high-reflectance film for improving directivity of light and heat treatment apparatus having such a lamp
US11680338B2 (en) Linear lamp array for improved thermal uniformity and profile control
US8005352B2 (en) Heat treating device
US6862404B1 (en) Focused photon energy heating chamber
WO1995028002A1 (fr) Procede et dispositif de traitement d'une plaquette de semi-conducteur
JPH07283096A (ja) 半導体基板の処理方法及び装置
JPH07283090A (ja) 半導体基板の処理方法及び装置
JPH07283095A (ja) 半導体基板の処理方法及び装置
US5368647A (en) Photo-excited processing apparatus for manufacturing a semiconductor device that uses a cylindrical reflecting surface
JPH07283091A (ja) 半導体基板の処理方法及び装置
JP4666427B2 (ja) 石英ウインドウ及び熱処理装置
JP2006294717A (ja) 基板加熱装置
JP2006269451A (ja) レーザによる成膜装置
JPH09275077A (ja) 処理方法及びその装置並びにｃｖｄ成膜方法及びその装置
JP2023530558A (ja) フルウエハレーザ加熱式ｅｐｉチャンバ
JP2002198319A (ja) 熱処理装置
JPH03207861A (ja) 加熱装置
KR20070066181A (ko) 반도체 제조 장치

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase