TWI231319B - Single crystal manufacturing apparatus and method - Google Patents

Single crystal manufacturing apparatus and method Download PDF

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Publication number
TWI231319B
TWI231319B TW92110133A TW92110133A TWI231319B TW I231319 B TWI231319 B TW I231319B TW 92110133 A TW92110133 A TW 92110133A TW 92110133 A TW92110133 A TW 92110133A TW I231319 B TWI231319 B TW I231319B
Authority
TW
Taiwan
Prior art keywords
magnetic field
solution
single crystal
temperature
pull
Prior art date
Application number
TW92110133A
Other languages
English (en)
Chinese (zh)
Other versions
TW200307065A (en
Inventor
Shoei Kurosaka
Hiroshi Inagaki
Shigeki Kawashima
Nobuyuki Fukuda
Masahiro Shibata
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200307065A publication Critical patent/TW200307065A/zh
Application granted granted Critical
Publication of TWI231319B publication Critical patent/TWI231319B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW92110133A 2002-05-10 2003-04-30 Single crystal manufacturing apparatus and method TWI231319B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002136261A JP4187998B2 (ja) 2002-05-10 2002-05-10 単結晶の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
TW200307065A TW200307065A (en) 2003-12-01
TWI231319B true TWI231319B (en) 2005-04-21

Family

ID=29416784

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92110133A TWI231319B (en) 2002-05-10 2003-04-30 Single crystal manufacturing apparatus and method

Country Status (3)

Country Link
JP (1) JP4187998B2 (ja)
TW (1) TWI231319B (ja)
WO (1) WO2003095717A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4857920B2 (ja) * 2006-06-07 2012-01-18 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP5240905B2 (ja) * 2008-04-07 2013-07-17 国立大学法人信州大学 磁界印加シリコン結晶育成方法および装置
JP5336779B2 (ja) * 2008-06-27 2013-11-06 インターナショナル・ビジネス・マシーンズ・コーポレーション 文字列変換を行う情報処理装置、文字列変換方法、プログラム、および情報処理システム
JP6950581B2 (ja) 2018-02-28 2021-10-13 株式会社Sumco シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置
WO2020174598A1 (ja) * 2019-02-27 2020-09-03 株式会社Sumco シリコン融液の対流パターン制御方法、および、シリコン単結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3885245B2 (ja) * 1995-12-27 2007-02-21 株式会社Ｓｕｍｃｏ 単結晶引上方法
JP3969460B2 (ja) * 1996-06-20 2007-09-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 磁場印加による半導体単結晶の製造方法
JPH11209197A (ja) * 1998-01-23 1999-08-03 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Also Published As

Publication number Publication date
WO2003095717A1 (fr) 2003-11-20
JP4187998B2 (ja) 2008-11-26
TW200307065A (en) 2003-12-01
JP2003327491A (ja) 2003-11-19

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