TWI231319B - Single crystal manufacturing apparatus and method - Google Patents

Abstract

Single crystal manufacturing apparatus and method for producing large and heavy crystals, whereby a single crystal manufacturing apparatus 1 having crucible 2 for accommodating molten silicon heater 3 heating the molten silicon wire 5 pulling seed crystal 6 chamber 9 accommodating above items and magnet 15 applying magnetic field to the molten silicon. Magnetic field is applied after necking is suspended during raising magnetic field so that dislocation in the neck is eliminated and fluctuation of neck diameter is reduced.

Description

1231319 Λ Amendment No. 92110133 V. Description of the Invention (1) ____ Technical Field of the Invention The present invention relates to a method for manufacturing a semiconductor single name by applying a magnetic field, and a manufacturing method for implementing the manufacturing method. Manufacturing method of single crystal and manufacturing the "condensation part" of semiconductor single crystal whose diameter can withstand large weight. The method of manufacturing single crystal without prior art can be achieved. Although there are various single crystal pull-ups, industrial quantities are used. The production process is especially about the silicon (czycrasky) method.) Figure 6 is a single-junction cross-section view of silicon single crystals produced by the CZ method. The used = vertical structure is composed of a quartz heater 2a on the inner side and a graphite heater 3 on the outer side. The graphite heater 3 is arranged around the crucible 2. The heater 3 is melted and melted. Solution 4. It is used as a stone ... the pull-up wire 5 'is provided with a seed crystal at the front end of the pull-up. The quartz crucible 2a on the inner side is brought into contact with the silicon melting solution 4 and the surface is dissolved, and oxygen is released in the dream melting solution 4. The single crystal ^^^ produced by the cZ method is grown and pulled up, and the growing, single crystal contains a large amount of oxygen dissolved from the crucible's quartz (SiO 2). Therefore, in the process of IC and LSI, even if heat treatment is repeated, it is difficult to produce

7054-5628-PFl (Nl) .ptc Page 6 1231319 Amendment ----- tit 921101, S3_Year 5. Description of the invention (2) = and ‘qu. Therefore, the internal oxygen precipitates open at a hot place close to the loot, and the impurity layer opens at a density of ^ 1 density + degree, which reduces the amount of oxygen existing in the wafer surface area (lnslcgettering). In the case where the single crystal 7 is dissolved, the ancient quality has various effects. When the CZ method is used, it is necessary to suppress the amount of oxygen entering the single crystal 7. The method used to: ί :: the amount of oxygen entering the single crystal is a method of applying a magnetic field to the CZ method. This method is called MCZ 丨 Wei Wei ^: Mouth 1 and el 2 are applied). By applying a magnetic field to the semiconductor solution, the solid-liquid interface is increased to suppress convection of the silicon melt solution, and to reduce the formation of convection. In addition, the reaction of the stable single crystal can be improved, and the oxygen in the silicon single crystal can be effectively suppressed. 2): "In the first instance, the industrial mass production method for single crystals for semiconductors-in general, by the CZ method In the MCZ method, the initial splenic a ==: contact seeding, the seed is connected with the liquid: the seed and _L undergo so-called necking and _2 = is transferred. Secondly, by expanding the spear, the Shi Xi single crystal with a narrow neck ft index is pulled up. With this, the implementation of the "" ing method is widely known, using the CZ method and the MCZ method to = method is an important process of Dash-like evil. ， Year early crystal pull up However, the MCZ method is used to produce Shixi single crystal field Suppressed by the magnetic field 7054-5628-PFl (N1) .ptc Page 7 Rev. 1231319 _ Case No. 92110133 V. Description of the invention (3) The convection of the silicon melt solution is reduced due to the temperature change near the melt surface The solid-liquid interface is in a stable state. As a result, the g-site existing in the seed crystal does not escape in the left-right direction and remains inside the necked portion, which has a problem that it is difficult to achieve no translocation. Here, in the MCZ method, In order to achieve no indexing, the general CZ method is also used, and the diameter of the necked portion is narrowed by pulling up the silicon single crystal until the index is eliminated, and a longer necking must be formed. Wei ^ In silicon single crystal In manufacturing, the diameter of the weight portion of the silicon single crystal that is pulled up is limited. If the weight exceeds the limit, the necking portion may cause the single crystal to fall. In particular, due to the large diameter of the accompanying crystal in recent years, And the weight increases, the heavy weight of the MCZ method Pull-up is even more difficult. For example, for the production of large-diameter Shi Xi single crystals with a diameter of 300 mm or more and growing large weights, there are safety issues such as the drop of large-diameter single crystals. 1 & W In order to solve the above-mentioned problems, the MCZ method described in Japanese Patent Publication No. 10-7484 does not need to be extremely thin, and the necking process is carried out in large-mouth scale wheat. The necking gradually increases the magnetic field strength. At the same time; ":, transposition. Then, the single crystal is pulled up safely. 肩 Shoulder expansion process to ensure a large weight of silicon. SUMMARY OF THE INVENTION Problems to be solved by the invention. If p is disturbed, if a simple magnetic field is applied, the state becomes very constrained. By this magnetic field confinement:: = solution is not stable, the temperature of the silicon melt solution / the temperature of the melt solution changes greatly. Page 1231319 _Case No. 92110133 V. Description of the invention (4) Generally, convection occurs when the device is heated in the absence of a magnetic field. Because of the dagger, the silicon melt solution is heated by the near wall of the hanging pot: The silicon melt solution plus: the thermal docking given; ^ The flow is within, so that the entire Shi Xirong solution σ =; T capacity liquid rises by the degree of the magnetic field that is applied to it. Convection. Therefore, it is given by the heater; The silicon melting solution of the inner stone melting solution is heated, and then the non-silicon solution is used to approach the center of the silicon melting solution more slowly near the inner wall of the crucible;: (: pair; heat conduction, comparing the heat transfer of convection Small, to ensure crucible 4. ", the temperature of the molten solution near the inner wall of the hanging pot near the point of conductive heat transfer is melted in the shoulder expansion process as described above, and the temperature rises. The strong sound of the desired magnetic field = early, the magnetic field is applied, and the magnetic field changes drastically from non-magnetic. The solid-liquid interface rises from the convective structure of the Shi Xirong solution, which is confirmed by experiments. The shape of the dream single crystal that the temperature of the molten solution drops and the upper part controls the problem of pull-up. / Early ... There is a translocation every day. For example, inoculation performed in a state without a magnetic field, after the necking is done, the pull-up = Erxi Rongluo liquid contact slowly rises, and the temperature of Shixi Rong solution increases. Shan She, which makes the magnetic field strong shrinkage part grow rapidly, said :: Move. This result makes it difficult to control the single-junction crystal and the magnetic field rise slowly under the condition of the neck. It is understandable. In addition, the magnetic field strength gradually rises. With the temperature change of the silicon melt solution, 7054-5628-PFl (Nl) .ptc Page 9 V. Description of the invention (5) = Result: The diameter of the necked portion becomes larger and larger, Reduced single knot ^ Introduce the index to a necked portion without indexation. Therefore, when% is changed and the temperature of the silicon melt solution is changed, the single crystal may be transposed. It is difficult to control the male and sigma shapes in such a magnetic field in a large-capacity molten solution. Dao μ solves the above-mentioned problems, and the object of the present invention is to provide a method and a manufacturing apparatus for manufacturing a single crystal, which can safely pull up without causing a large diameter and a conductor single crystal neck portion to crack. Further, another object of the present invention is to provide a semiconductor single driving method and a manufacturing apparatus for performing indexing of a neck collar. When entering the chanting process, the means to solve the problem can be removed. In order to achieve the above purpose, the manufacturing method of # is characterized by the absence of 'c: the species is in contact with the silicon melt solution, and the above 4 times are performed.使 The desired strength of the seed crystal that stops the seed crystal pull-up and starts to apply force t and contract ☆ has been applied: 2: The seed crystal is said to be strong due to the magnetic field. Without further ado, start again The second invention of the present invention is a manufacturing method, in which the strength of a single junction of the invention f is increased to a desired strength before the magnetic field is applied, and the magnetic field strength is increased. The third invention of the present invention is to perform the above-mentioned silicon melting solution. The third invention of the present invention is a manufacturing method, in which a single junction of the invention is applied or the magnetic field strength is increased, and a single semi-heavy weight of the X-ray in the accompanying single junction is made. The front end process of the single crystal in the crystal shrinking part; the degree rises and pulls up the crystal or the magnetic field temperature controlled crystal or the magnetic field 1231319 5. The invention specifications ^ The intensity rises to the system. After the desired strength, the above-mentioned melting of the stone eve ^ temperature Μ sign is: the name of the ^ four brothers invented as a single crystal of praise + touch, 4 in the state of no tank farm, the seed disk front plate; :: !! ‘Its special pull-up, · :: a process of pulling up and shrinking the seed crystal:,. After the solution is connected to the temperature of the above-mentioned silicon melt solution, the second seed crystal is crystallized; the fifth invention is the same as the third or 4 :::: after a predetermined period of time, and the crystal is manufactured. Fang Yiyi is the second or fourth invention as described above ... 1; The above temperature of the above-mentioned rhenium solution; :: According to the method of making the diameter of the constricted part, the seventh invention of tb is the star of the first invention as described above After the above silicon melting and the above-mentioned pull-up are started again, the second step of the shoulder expansion process is to control the temperature of E / Heye. As shown in the table below, the & the present invention > manufacturing method is performed, in which the above-mentioned invention of the single crystal is eliminated and the magnetic field is strongly produced == 'In the process of expanding the shoulder, by using the Shi Xirong solution The temperature of the upper cutting and melting solution raised by the temperature changes, and the above-mentioned components of the ninth hair valley of the present invention are characterized by: in the heart; the magnetic field; Seeded

7054-5628-PFl (Nl) .ptc Page 11 Crucible 'Contains and grows appropriately: crystal manufacturing equipment, including: the molten solution; pull-up clothes :: =, solution; heater, heating: growing single crystal; magnetic field Applying = internal = solution surface contacts the seed crystal, 1231319 V. Description of the invention (7) The front end is in contact with Miao, _. _ Yang> valley liquid, and the above S is inserted into μ ^, and: the above seed crystal is pulled up, and Start to apply two kinds: while the contraction of the desired strength, the applied magnetic field :: away: from the magnetic field strength γ, two: kinds; have a control device 'control the above' Zhuang and then start to apply the% device. The pull-up device and the magnetic disaster mentioned above are contained. Ί: Ϊ: A single crystal manufacturing device includes: crucible solution; top: thing; early; raw material solution of crystal; heater, heating the growing single knot. ·: The surface of the molten solution in the crucible is in contact with the seed crystal, and ", 夂: magnetic field application device, applying magnetic 埸, ν: each of the above components; its surface, and the cavity, which contains the above-mentioned Shi Xirong solution w 二 苏 二The control of the two f heaters, through the magnetic field strength of the ΐ ΐ :: Jin Wang, and has a control device plus device to suppress the above-mentioned obstacle field application device.罝 Control the heating method described above, the implementation of the model, the production method of the single crystal and the strong manufacturing method of the scented man, and the detailed description will be made according to the drawings. The implementation of 衣衣 4 衣装 Same as in the figure: single, / longitudinal section of the manufacturing device ^ is graphite hanging horse 2b ;: 2 is two on. It consists of a single Japanese structure, and it is set on the crucible support 9 9 rust steel ΐ Γ The cavity 9 of the appearance of the device 1 is silicon + ΐ: ί, dyed with a single crystal pull-up shaft as the center Its mouth is also in its center: Fan > σ and a circle with the same shape: and heating the stone inside Hanging 2 ^ and hanging outside 2, equipped with 彳 outside the second melting solution 4 inside the crucible 2 Heater 3. The heater 3 is composed of an enclosure, etc .: 7054-5628-PF1 (N1) .ptc Page 12 Amendment 5. Description of the invention (8). The temperature is controlled by the temperature controller 14 disposed outside the cavity 9, and the temperature of the heater 3 is controlled by this. The heater 3 \ tube η is surrounded on the outside of the heater 3. The thermal insulation tube η prevents the thermal damage of the heater, and keeps the temperature inside the thermal insulation tube 1 1 to a high temperature. The quality is mainly carbon fiber material. The container / plate is the same as the material of 11. The eighth and right sides of the cavity 9 are opposite to each other in a state of a pair of magnet knives as magnetic field applying devices. The magnet 5 is an electromagnet and a superconducting magnetic field having a variable magnetic field strength. Another method of applying a variable magnetic field ^ = Iron and chopping solution 4 are set in a variable distance manner and used instead. , = = = Some magnets can also apply a tip magnetic field. The magnet 15 is controlled by the magnetic% control state 16 to control this output. The dipper: T surface is above the crucible 2, and the lead wire 5 is rotatably raised and lowered from the center of the upper part of the cavity 9 to the vertical center. Set one /, lower 钿 5 and rise in a rotating state, raise this / wash the day, day and day 6 grow a single junction through the lead 5 interface ^ The solid and liquid on the contact surface with the Shixirong solution 4 η # rA, the single crystal manufacturing device 1 is to observe the solid-liquid interface. After the 7 single camera 19 and the camera control unit 2 are in focus, the written picture is displayed on the 5-camera control unit 20, and the television camera 19 Take two == two f. You can see, ^, adjust the temperature to control crying! 4. Ren Hua, according to the diameter change of early crystal 7. In addition, set the temperature on behalf of dm, and control the temperature of the heater 3 TV camera shirt Camera 19 or used in conjunction with a TV camera 丨 9, borrowing 1231319 V. Invention Description (9) = Temperature measurement device such as an external thermometer on the solid-liquid interface temperature change: measure 'adjust the temperature controller 14 according to the change in temperature Set temperature :: Temperature of heater 3. These operations can be manually operated by the operator I, i Ϊ photography control unit 20 and temperature The measuring device and the controller 14 are interconnected with each other, and a mechanism capable of automatically giving feedback may be used. Although the description is omitted in the second paragraph, in order to promote the pull-up speed of the single crystal 7; Winding: 7 pull-up speed / Radiation force card around the crystal 7 骋 q Zhan Guang Eryuan, when the pull-up early ,,, and mouth, the desire% ^ curtain screen is set on the bottom surface of the carcass 9 In the case of acceptance of accident 4 ^ 8 from the collapse 2, leakage of the Shi Xirong solution and discharge Ϊ 设有 is provided with a supply port 12 ′ and the atmosphere of the cavity 9 is adjusted argon: to do The material is often supplied. After the gasification, the method can be used. The liquid argon gas is used as the original 10, which is connected to the second cavity and fed into the cavity 9. The lower part of the cavity 9 is provided with a discharge port. Downstream ^ pump 13. Argon gas is supplied from the supply port 12 and passes the crucible 2 (arrow in the figure) Γ and is discharged from the vacuum port 13 from the discharge port 10 (refer to the conductor t junction HJ of the sixth embodiment): A semiconductor single crystal manufacturing device is used, and Erming manufactures half-filled crucibles. Polycrystalline silicon of pure purity is roughly broken and washed. The heater is heated. At the same time, a trace amount of conductive type impure phosphorus (P) and silver impurities are added at the same time. Boron (B) is added to obtain P-type crystals, and addition (余) is obtained to obtain N-type crystals. The resistivity of the crystals is determined by Impurities 7054-5628-PFl (Nl) .Ptc Page 14 1231319

1231319 Ά Amendment No. 92110133 V. Description of the Invention (11), 5 = The rate of increase of the magnetic field strength can also be a fixed value with respect to the passage of time, or = it can change with the passage of time. The rate of increase of the magnetic field intensity is controlled by the magnetic field like the second one! 6 Program control. For example, in the case of the magnetism of the solid-liquid interface 17, the magnetic% controller 16 can be adjusted according to the photographic day surface of the television camera 19, so that the output of the magnet 5 can be changed. The field strength rises to a desired value, and the magnetic field strength is adjusted to a constant value by the magnetic field control: 16. Then, the magnetic field intensity is set to a constant U for 5 minutes or more, and then the pull-up lead 5 is started to be surrounded. It is best to start to surround the pull-up lead 5 after more than 15 knife clocks. ○ When the diameter of the necked portion 7 increases or decreases with respect to the pull-up speed at this time, determine the temperature state of the silicon melt solution 4. Whether it is appropriate or not, after entering the temperature correction operation of the heater 3, it can also be moved to the white I phase in the shoulder expansion process. As shown in FIG. 3, the shoulder expanding process is performed under a state of applying a magnetic field, and the single crystal 7 is thickened to a desired caliber, and is drawn to form a body part which is different from that of the i-th figure. For example, in the case where a semiconductor wafer having a diameter of 300 mm is manufactured, the diameter of the 'single crystal 7' is enlarged to a diameter slightly larger than 300 min to form a straight body portion. At this time, the magnetic field may be maintained at a constant value or may be changed as the diameter of the single crystal 7 changes. In the conventional technical description, the temperature of the silicon melt solution 4 is unstable and violently moves up and down due to the increase of the magnetic field intensity. It is not suitable to perform the shoulder-to-side process in this state. However, the magnetic field strength must be maintained for more than 5 minutes, the temperature of the silicon melt solution 4 is stable, and the state of the solid-liquid interface is also stable. This is proved by experiments. '

1231319 J Duozheng Case No. 92110133 V. Description of the Invention (12) "In the first embodiment," in the state where the seed crystal 6 has stopped being pulled up, the magnetic field strength gradually increases, and the magnetic field strength rises to a predetermined value. The value = keep at n money, and after a considerable time that the temperature change of Shixirong solution 4 %%, start the seeding 6; if the convective structure changes of Shixirong solution 4 converge, the solution After the temperature is stable, the shoulder expansion process can be performed, and the silicon s = pull-up becomes easy. Because the neck is performed in a magnetic field-free state: "Even if the diameter of the 7 Λ part 17 is large, it can also be effective. Non-transposition of ground silicon single crystal 7. / Flat, mouth, and stubbornly, the second embodiment will be described next, a method for manufacturing a semiconductor single crystal will be described. In the first embodiment, a magnetic field is applied to the silicon melt solution 4 to make the magnetic field. The strength rises, even if the temperature of the final silicon melt solution 4 fluctuates up and down, but for this purpose, in the second embodiment, Wen-Shan is used as a heater: First, the same as the first embodiment, The seed clip 8 at the lower end of the pull-up lead 5 holds the seed crystal 6, The seed crystal 6 is brought into contact with the molten silicon solution *. Then, as shown in FIG. 2, the crucible 2 and the seed crystal 6 are surrounded by the lead wire 5 and the seed crystal 6 is pulled upwards. Inoculation in contact with the silicon melt solution 4 'In order to eliminate the translocation transmitted from the slip inversion which occurred in the seed 6 at a high density, a seed having a diameter of 12.7 mm became as thin as 5 mm and was formed The necking of the necking portion 1 7. When the necking is performed, the surrounding of the pull-up lead 5 is stopped, and the crystal pull-up is stopped.

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1231319 V. Description of the invention (13) In Figure 5, a time chart showing the relationship between the heater temperature and the applied magnetic field. The horizontal axis is the time car. The vertical axis is (a) qn, 0ff pulled up, (b) heater temperature [° C], (c) silicon melt solution temperature [° c], and (d) magnetic field strength [ T] (tesla) ° In FIG. 5, the pull-up stop point is set to 0 [mi η] on the time axis. Stop pulling on the seed crystal 6 (Fig. 5a), and after 1 to 5 minutes, the set temperature of the heater 3 is raised by the temperature controller 14 (Fig. 5b) 〇θ In this second embodiment In the middle, it is set to a temperature higher than a normal heater temperature of ^ ι˜20 ° C. As the temperature of the heater 3 rises, the temperature of the silicon melt solution 4 also rises (Fig. 5c). It takes 5 to 15 minutes for the temperature of the silicon melt solution 4 to stabilize. After a considerable time has elapsed after the temperature of the silicon melt solution 4 has stabilized, the magnetic field controller 16 excites the magnet 15 and starts to apply a magnetic field to the silicon melt solution 4. The magnetic field strength of the magnet 15 is gradually increased with the passage of time. In the embodiment, it takes 1 hour to increase 0.3 ~ 04tesla, 1 The rate of increase of the field strength of this brother can also change with time. Θ =, and changes with time. can. The rate of increase of the magnetic field intensity is controlled by the program of the% controller 16 as described above. For example, in the case of the solid-liquid interface 丨: magnetic, the output of the magnet 15 can be changed by setting the imaging daytime of the television camera 19 to 16. Figure 5 of the controller J shows an example in which the magnetic field intensity gradually increases while J is maintained constant. The temperature of the heater 3 may be changed. ; :: 3 of the temperature: In the initial stage of adding 1 field, the temperature of the fossil fused solution 4 fluctuates greatly due to the convective structure of the silicon fused solution 4. Therefore, the change of the fan is not better than the second

7054- 5628-PF1 (ni) .j Page 18 1231319-Case No. 921] 01 along the fifth, description of the invention (14) in the magnetic field of the moon map f, using a television camera 19 to stop the necking diameter of the pull-up The enlargement and reduction of photography are performed by the method of 窠, ',' 丨 丨 14 crying, and then the 察 machine detects that the person 21 adjusts the temperature control Lang 14 and actively performs the temperature stabilization of the solution 3 of the heater 3 temperature. X,, which can make Shi Xirong ^ ^ 4-^ ^ ^ ^ j temperature control 14 of the silicon melting liquid 4 / dish temperature variation against sodium with magnetic field changes in the program control. The magnetic field strength of the magnet 15 rises to a desired value, and the magnetic field strength becomes a certain value. Then, the value of the magnetic field is 4 minutes, and then starts again after 5 minutes or more. == 15 minutes or more, and then the surrounding pull-up lead 5 is started. . In the case where the percentage of the necking portion 17 is higher than the pull-up speed, it is determined whether the expansion or contraction of Shi Xirong ^ The temperature correction operation of the heater 3: =; = Second phase growth phase. 7 ^ 4 of the shoulder expansion process shown in Figure 3, under the state of the magnetic field application process / process, the single crystal 7 is thickened to the size of the removed body 20 L straight body part shown in the shoulder expansion process. For example, in the case shown in FIG. 1 when the diameter is 3 mm, the straight conductor wafer of the single crystal 7 is formed into a straight body. At this time, the magnetic field may be changed even if it maintains a diameter of 1 mu ㈣ and changes its shape. ' In the second embodiment, the silicon melt 9 is canceled when the magnetic field is applied, and the state temperature rises due to the change in diameter. Xi ~ qi ... lowered, so the neck can be suppressed = Of course, the temperature applied to the solution 4 is an average rise slowly, Shi Xirong_ "Bottom, right suppress the temperature of the heater 3 7054-5628-PFl ( Nl) .ptc Page 19 1231319 _ Case No. 92Π0133_ Year Month Revision _ V. The description of the invention (15) is better. The first or second embodiment is shown in Figures 1 to 3 In the semiconductor single crystal manufacturing device 1, the seed crystal 6 is pulled up or stopped, the temperature controller 14 and the magnetic field controller 16 are controlled, and the phases are interconnected by a well-known control device, so that automatic control can be performed. Effect of the Invention In the single crystal manufacturing method and manufacturing device of the present invention, a large-diameter, large-weight semiconductor single crystal can be safely pulled up, and the necked portion does not break. Also, the single crystal manufacturing method and manufacturing device of the present invention In the necking process, the indexing of the necking portion can be effectively removed.

7054-5628-PFl (Nl) .ptc Page 20 1231319 Amendment No. 92110133 Brief Description of Drawings Figure 1 shows the state of pulling up a single crystal in the single crystal manufacturing apparatus of the present invention, and is a longitudinal sectional view. Fig. 2 is a longitudinal sectional view showing a state in which the single crystal production apparatus of the present invention has stopped pulling up the single crystal. Fig. 3 is a longitudinal cross-sectional view showing a state in which the single crystal manufacturing apparatus of the present invention is performing the shoulder expanding process. Fig. 4 is a time chart showing the relationship between the pull-up ON and OFF and the applied magnetic field in the first embodiment. Figure 5a is the ON and OFF of the pull-up; Figure 5b is the heater temperature; Figure 5c is the Shi Xirong solution; Figure 5d is a time chart showing the magnetic field strength respectively. Fig. 6 is a vertical sectional view showing the outline of a conventional single crystal manufacturing apparatus. DESCRIPTION OF SYMBOLS 1 ~ Single crystal manufacturing equipment; 2 ~ Crucible; 2 a ^ ^ Quartz hanging; 2b-^ Graphite crucible; 2 c ^ ^ Crucible support shaft; 3 ~ Heater; 4 Dream melting solution; 5 ~ Lead; 6 ~ Seed, 7 ~ single crystal; 8 ~ seed cool, 9 ~ cavity; 10 ~ exhaust port; 11-^ insulation tube; 12-< supply port; 13-^ vacuum pump; 14--temperature Controller; 15--magnet; 16, ◊ magnetic field controller; 17 ~ necked portion;

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Claims (1)

1231319 Amendment > Case No. 92〗 inns VI. Scope of application for patent 12: Manufacturing method of a single crystal 'characterized by the following features: and performing contact between the filament and the filament L ~ 5 and the Shi Xirong solution, I Order the process of pulling up and shrinking the seed crystal. Stop the seed crystal pull up and start to apply the magnetic field. Because the magnetic field strength rises to the desired state, start pulling up the seed crystal again. k degrees 'in the field where the magnetic field has been applied' 2 in the second T! patent method of the single crystal manufacturing method, or the magnetic field strength is increased, or the magnetic field strength is increased by 3 !! The temperature of the above-mentioned Shixi melting liquid Control. Expansion in the basin: The method for manufacturing single crystals described in item 1 of Li Qiang. The first step is to stop the temperature control of the silicon melt solution before applying the magnetic field to the yoke. 4. A method for producing a single crystal in a drawn state, in which, in a state without a magnetic field, J: of the seed crystal is subjected to a process 4 in which the seed crystal is pulled up and contracted, and contacted with the Shi Xirong solution, Stop the seed crystal pull-up; After applying the temperature control of the 5th melting solution, start to apply a magnetic field method, which is the temperature control of the single crystal crystallization ice θ silicon melting solution as described in item 4 or 4. After the time that the silicon melting solution has been stabilized, a magnetic field is applied. 6. The manufacturer of the single crystal as described in the second or fourth item of the patent application scope. And according to the change of the diameter of the frequency reduction part, the above temperature of the above silicon melting solution is performed Control 1. The method for manufacturing single crystals as described in item 1 of Shenyan's patent scope, 1231319 --_ 921] 0] Modification VI. Shenyan's patent scope performs the above-mentioned crushing and melting, and the above-mentioned pull-up starts again. After that, the temperature of the thorium solution is controlled. Before the shoulder-expanding process 8 · If the above-mentioned pull-up is started, the method of early crystallization is described, and the magnetic field strength is increased in the above silicon process. By offsetting the temperature control of the accompanying liquid. Yang / He, night temperature change, and silicon melting. 9 · A single crystal manufacturing device, packaged with a 'single growth' appropriate single name, heating j, heating the melting; The raw material melt solution; single crystal; & the surface of the melt solution in contact with the seed crystal, and the growth = Shi Erzhi, the application of a magnetic field; and the moon body, each of the above components are collected, and its characteristics are: In the absence of a magnetic field, the front end of the seed crystal was washed and the process of contacting the sacred seed μ ^ ', Yuta worm ^ valley fluid, and pulling up and shrinking the day-to-day seeds was stopped; And began to apply a magnetic field; Since the strength of the magnetic field has risen to a desired level, the above-mentioned seed crystals are started to be pulled up in the state; the pull-up device and the magnetic-field applying device are provided. There is a control device that controls the above-mentioned single crystal production device, Including: Hanging horse, containing the raw material melt solution for growing single crystal; heater, heating the melt solution; pull-up device, contacting the seed crystal on the surface of the melt solution in the crucible, and growing 7054-5628-PFl (Nl) .ptc Page 24 • 1231319 7054-5628-PFl (Nl) .ptc Page 25