TW200307065A - Production method and production device for single crystal - Google Patents

Abstract

This invention provides a production method and a production device for a semiconductor single crystal. The production device (1) for a single crystal comprises a crucible (2) for storing the material melt (4) of a single crystal (7) to be grown, a heater (3) for heating this melt (4), a wire (5) for bringing a seed crystal (6) into contact with the surface of the melt (4) in the crucible (2) to pull up the single crystal (7), a chamber (9) for housing the above members, and a magnet (15) for applying magnetic field. Necking is carried out in the absence of magnetic field, before pulling is stopped, and the heater (3) is temperature-controlled. Then, magnetic field is gradually applied by the magnet (15) until a magnetic field intensity reaches a desired value, and thereafter pulling is resumed. A large-diameter, heavy-weight semiconductor single crystal can be safely pulled up with dislocation at a restriction part removed and without causing breakage at the restriction part.

Description

200307065

V. Description of the invention (l) The technical field to which the invention belongs The present invention relates to a method for producing a semiconductor single crystal by applying a magnetic field, and a manufacturing apparatus for implementing the manufacturing method, in particular =: a semi- "single crystal manufacturing method and manufacturing apparatus, Hobe = can withstand the pull-up of semiconductor single crystals with large weight, and can achieve the previous technology without turning

But especially for CZ applications

Although there are various methods for manufacturing single crystals, single crystals are pulled up, and the Czycrasky method is possible using industrial mass production methods. Fig. 6 is a sectional view of a single crystal made of silicon single crystal by the CZ method. Generally, the crucible used in the manufacture of silicon single crystals is a vertical structure, which is composed of a quartz crucible 2a on the inside and a graphite crucible on the outside as a two-layer structure. The graphite crucible 2 is equipped with a heater 3 made of graphite. In the silicon melt solution 4 melted by the heater 3. It is used as silicon. The pull-up wire 5 containing the device is contained in the front end, and a seed crystal 6 is installed at the front end. Crystal 7. Ή 'wrong this, Yu Qi

The Shiyang crucible 2a on the mu side is dissolved with silicon ', and oxygen is released in the Shixirong solution 4. CZ method = the surface will be pulled up from the stone syrup solution 4 in the quartz hanging disaster 2a and cultivated ::: single crystal early crystallization contains quartz from the crucible (II- ?, in the process of growing this' even if it is repeatedly heated Provenance

200307065 V. Description of the invention (2) and 2: The oxygen precipitates in this' are close to 100. . Impurities in the hot place [So: the density of the recessed layer reduces the ^ a * ^ Ba ^ "7r; rttering) existing on the surface area of the wafer 〇: Under the influence of ancient v shells, CZ is used Case 2 of the law ==: The amount of oxygen in crystal 7. The method used to the amount of oxygen in the CZ method 6 ^ 1 ancient, D, and D crystals is to apply a magnetic field and add 22: This method is called the MCZ method for single crystal manufacturing (napp d cz method). A magnetic field provided in the semiconductor silicon melt solution is used to apply a magnetic field to the silicon melt solution to improve the magnetic properties of the silicon melt solution. The cz method is used to produce a single crystal. The vibration of the solid-liquid interface is also: Convection of the siliceous valley fluid, which reduces the formation of convection. In addition, the change of 2 can increase the reaction of stable silicon single crystals, and it is an industrial mass production method for effectively feeding silicon melt solution and single crystals of quartz crucible (si02) -Λ "cuts. Liquid contact medium precision =: MCZ method 'Initially melts the seed crystal with Shi Xi, and transfers it to the shrinking part that is transferred by the slip generated at the same degree. Secondly, by Hcking), a neck with a thickness of 2 to 5 mm is formed. There is no indexing process, ... = to the desired caliber, Necking method is widely used to pull up day by day. With this, the method of beating curling is Dash. However, in the production of Shi Xi single crystal by the step method, it is suppressed by applying a magnetic field.

Page 7 200307065 ——Fifth, description of the invention (3) Shi Xirong solution $ # 4 · ^ The solid-liquid interface becomes safe. The temperature variation near the surface of the melt becomes smaller. As a result, the salmon salmon, which was present in the seed, escaped Q and remained inside the neck constriction, which was difficult to achieve. In the MCZ method, in order to achieve no translocation, Λ until the transfer of Shi Xidan The crystal is pulled up to straighten the necked portion: Λ: In addition, a longer necked portion must be formed.罝 仏 The production of finer Shi Xi single crystals. The diameter of the part is limited, if the weight of super silicon ::: is necked, there is a danger of single crystal falling. Special feature: Lijin = Member: Department will break and become large-caliber with crystal, and weight increase ’In recent years, it is more difficult to pull up with Shi Xi single knot. For example, for a large replacement of the Si Xi single crystal round and the growth of a large weight of silicon single crystal _ above the diameter of the large-diameter crystal single crystal falling, and other safety ° conditions, the thin necked part has a seductive bulletin Borrowing = low. Japanese Patent Laid-Open No. 10-7484 does not need to be extremely thin, but in the A shrinking process, the necking slowly increases the magnetic field strength and is simultaneously indexed. Then, the single crystal is safely pulled up thereafter. Only enter the shoulder expansion process to ensure a large weight of silicon. Contents of the invention. However, in the shoulder expansion process, the convection of the first-order milk is bound by the rapid magnetic field. Temperature mm 7054-5628-PF (Nl); Chentf.ptd

200307065 V. Description of Invention (4). Normally, the flow near the inner wall of the crucible generated by the heating of the device is circulated in the crucible, and convection is applied. Therefore, when heated by the Shi Xirong solution, the slower melting into silicon is near the convective heat transfer point, and the internal field state as described above changes to a drastic change in the exhaustion ascending. This is confirmed by experiments. The problem of crystalline form. For example, in the case of non-inoculation, the neck degree gradually rises after completion, and the As part rapidly crystallizes into a solution to change the single crystal. In the single junction, the temperature of the silicon melt given by the silicon melt with a strong magnetic field is near the crucible. Crucible convection. Melting of heat transfer rises. The temperature at which the magnetic melting solution is applied. The temperature of the crystal has a magnetic field. Convection. Therefore, the application of Shi Xirong's solution to the silicon to apply a magnetic field to the heater is followed by the non-liquid center portion, which is small. The solid-liquid interface is known for the desired magnetic field in order to ensure the fusion process near the wall. Under the condition that the melting of silicon is difficult to control, the heat in the crucible is heated by the heater and the entire heated solution is suppressed. The heat transfer of the pre-heated butt fusion solution is suppressed. At the same time, Shi Xi's silicon melt solution solution was violent, and even the silicon single solution approached the solution by heating to the solution by the liter. The heat conduction near the inner wall of the Shi Xirong solution, the specific heat transfer fluid temperature drops from the non-magnetic convective structure and then changes up. The state of the pull-up is transposed: the seed is brought into contact with the Shi Xirong solution. ,,? The pull-up is stopped, and in this state, the temperature of the magnetic field strong liquid is changed up and down. This result made the early crystals from the neck thicker, and the growing crystals rapidly re-melted. Therefore, it is understandable that it is difficult to control the crystal shape by pulling up the single crystal and slowly increasing the magnetic field. The temperature rises slowly, as the temperature of the silicon melt solution changes.

200307065 V. Description of the invention (5) Result ′ The X-ray analysis was performed on the single crystal with the diameter of the necked portion repeatedly increasing and shrinking, and the index was introduced into the necked portion without indexing. Therefore, a single crystal is produced in a state where the temperature of the silicon melt solution fluctuates due to a change in the magnetic field, and the single crystal may be transposed. It is difficult to control the shape of the single crystal during the increase of the magnetic field strength in a large-capacity molten solution. In order to solve the above-mentioned problems, an object of the present invention is to provide a method and a device for manufacturing a semiconductor single crystal, which can safely pull up without causing a neck of a large-diameter and heavy semiconductor single crystal to crack.

In addition, another object of the present invention is to provide a method and a device for manufacturing a semiconductor single crystal, and perform necking process to remove the necked portion. Means for Solving the Problem To achieve the above-mentioned object, the present manufacturing method includes: It is characterized in that when no contact with the silicon melting solution is performed, the seed crystal is pulled up and stopped to start to a desired strength, and the seed crystal is applied. The first invention of the invention is a process in which the front end of the seed crystal is pulled up and contracted in the state of a single crystal magnetic field; a magnetic field is applied; and the state of the magnetic field is increased due to the strength of the magnetic field, and then the first first pull-up is started. Invention or magnetic field strength to perform the above-mentioned single crystal melting of silicon melting, or temperature control of magnetic field solution

The second invention of the present invention is a manufacturing method, wherein the strength is raised to a desired strength before applying a magnetic field, and then the system is manufactured. The third invention of the present invention is such as the k-method, wherein, before applying the magnetic field, it may interfere with the 命% life ~ τ, ,, and the daily system. As the intensity increases, or the magnetic field

200307065 II _ V. Description of the invention (6) = After the temperature has risen to the desired strength, the temperature control of the above-mentioned silicon melt solution is performed again. The fourth invention of the invention is a method for manufacturing single crystals. In parallel, the front end of the seed crystal and the second melting solution are pulled up and pulled up; the process of shrinking t is contracted; the above seed crystals are controlled by the temperature of the i melting solution, and then a magnetic field is applied. Crystal manufacturing. It is clear that the single junction of the above third or fourth invention controls the temperature of the above-mentioned silicon melt solution. The sixth invention of the present invention is: a method for manufacturing a crystal, and the first or fourth invention of the invention For the change of the junction, perform the above-mentioned melting, Shila, and the method according to the diameter of the necked portion, wherein the above-mentioned pull-up again indicates the temperature control of the above-mentioned silicon melt solution that crystallizes early. . Then, before the shoulder expansion process, a manufacturing method is performed, in which the above-mentioned invention of the single crystal of the first invention is eliminated with the above magnetic field intensity of 2 ° 1. In the shoulder expansion process, the silicon melt is resisted. Temperature control of solution. The temperature of the silicon melt solution changes, and the ninth invention of the present invention contains a crucible suitable for growth and growth. The early crystallization manufacturing device includes: the melt solution; a pull-up device; , Heating to grow a single crystal; the magnetic field is applied to the surface of the molten solution in contact with the seed crystal, the above components; its characteristics, know the magnetic field; and the cavity, in the absence of magnetic field, the seed crystal 7054 -5628-PF (N1); Chent f

Ptd Page 11 200307065-** V. Description of the invention (7) The front end is in contact with Shi Xirong solution, and progresses, stopping the seed crystal pull-up, the above mentioned seed crystal pull-up and contraction system rises to the desired Intensity, I: add a magnetic field to the yoke; pull the seed crystal due to the magnetic field intensity; and start the field application device with the control device in a wide field. The above-mentioned pull-up device and the above-mentioned magnetic system are the tenth issue of the present invention. The device that contains the appropriate single crystals for growth and growth includes: hanging and melting solution; a pull-up device, the liquid in the hanging device; a heater that heats the growing single crystals; a magnetic field applied to the surface of the w / grain liquid to contact the seed crystals The above-mentioned components are characterized by a wide range of processes: force; f field; and cavity, the time for which the temperature of the silicon melt solution is stable, J, σ: the control of the 'through the excitation to the desired magnetic field strength, and has ^ Making a dream ^ The magnetic field applying device and the magnetic field applying device described above. Under the control of the heating system, the above-mentioned heating mode Φ "dagger" is used to describe the single crystal manufacturing method of the present invention and Peng Zao's jealousy, and will be described in detail based on the drawing. A vertical section view of a crystal manufacturing device. The number 2 in 5 为 is a double-layer structure composed of quartz hanging milk 2 a and ink hanging, and is installed on the hanging 2 aΗ. It forms an early 'crystal Manufacturing device! Appearance of the cavity Twenty-nine shafts 2c A steel made by Lugang uses a single crystal pull-up shaft as a circle: dyed dysfunction. Hanging 2 is installed at its central position, and ^ ^ is described on its periphery Heater 3 for heating the Shixirong solution 4 in Hanging Disaster 2. Heater 3 \ circle ^ = Page 12 7054-5628-PF (Nl); Chentf.ptd 200307065 V. Description of the invention (8). A temperature controller “outside the cavity 9” generates electric power, and thereby controls the temperature of the heater 3. On the outside of the heater 3, the thermal insulation tube U of the plus Q is surrounded. The thermal insulation tube u prevents heating. The device has been placed in the original tube shape and kept the temperature in the thermal insulation tube 11 at a high temperature: "The two clams are mainly made of carbon fiber. / 、 / Huang and 11 are made of shovel and upright and arranged in opposite directions. Magnets, etc. The magnetic field strength is variable. Sf magnet 15 is an electromagnet and a superconductor, and; ^ is further composed of an upper magnet and a lower magnet. It is replaced by a field controller. By means of the field controller 16 controls the output; ^ Magnetic field is also available. The magnet 15 series and the vertical lead 5 ° are vertically arranged: 2: the center of the upper part of the cavity 9 can be rotated with the seed clip 8. The seed is lost 8 "to protect the ^ Pull, place, and set the lower end to rise in the rotating state, 蕻 + ★ ^ Siyang 6 and Japanese 6 grow single crystals through the lead 5 interface. 3 The solid and liquid at the contact surface of the silicon melt solution 4 , The single crystal manufacturing jealous helmet # changes in diameter, with a TV camera, a single crystal 7 in the solid-liquid interface, directly connected the display 21 to the camera = 9 and "control unit 2 .." Then, the picture is displayed on the monitor ^ In the early 7020, the display 21 of the 21 taken by the television camera 19 will be observed to make it visible. The operator can turn it from the display. Temperature controller: 4 2 夂 θ, according to the diameter change of the single crystal 7. In addition, instead of TV camera and 2: degree, and control the temperature camera 19 of the heater 3 or use with TV camera, borrow 7054- 5628-PF (Nl), Chentf ptd p. 13 200307065

A temperature measuring device such as an infrared thermometer measures the temperature change of the solid-liquid interface, adjusts the set temperature of the temperature controller 4 according to the temperature change, and controls the temperature of the heater 3. These operations can be manually operated by the operator ’or the photographic control unit 20 and the temperature measurement device and the controller 4 are connected to each other, and a mechanism that can automatically perform feedback may also be used. Although the description is omitted in the first figure, in order to effectively increase the pull-up speed of the single crystal 7, a radiation screen may be provided above the crucible 2 around the periphery of the single crystal 7 to be pulled up. At the bottom of the cavity 9, when the Shi Xirong solution 4 continues from the accident 2 condition, it is used to receive the receiving dish 18 of 4.

in! A supply port 12 is provided in the upper portion of the body 9, and a high-purity argon gas for adjusting the atmosphere of the cavity 9 and discharging the vapor is constantly supplied from the supply port i2. The argon gas may be supplied by a generally used method. The liquid argon gas is used as a raw material, and the argon gas is supplied to the cavity 9 after being disordered. A discharge port 10 'is provided at the lower portion of the cavity 9 to connect the vacuum pump 13. The argon gas is supplied from the supply port 12 and passes through the accident 2 ^ LI "flows" and is discharged from the discharge port 10 through the vacuum pump 13 (refer to the sixth first embodiment and the first to third figures show the method of single crystal from a semiconductor conductor) First, put the multi-junction with the purity of South into the crucible 2 and add dysprosium with the heater 3. Add the substance (additive or dopant). Add phosphorus (P) and antimony (Sb) to obtain an n-type single crystal manufacturing device, and explain the manufacture of semi-crystalline After the spar stone is roughly broken and washed clean, at the same time, a trace amount of conductive impurities is added and rotten (B) to obtain p-type crystals.

200307065 I ------ V. Description of the invention (10) Addition amount control. At this time, in a non-excitation state, no magnetism is applied; the controller 16 controls the magnet 15 so that the seed crystal 6 is brought into contact with the stone evening solution 4 by pulling the lead 5 again. Block two, said that the clamp 8 holds the seed 6, and the seed 6 is in a rotating state τ, and the magma 2 and the crystal pull shown in the drawing. In the seeding; enclosing 'the seeding 6 upwards occurs in a high-density inoculation of the sliding r chain contact of the seeding 6' in order to eliminate the change from being in the r: _aa seed to 5 as thin as possible, the neck is formed The neck of the shrinkage 1; is in the conventionally implemented MCZ method ψ ± 4 solution, because the inhibition of Shi Xirong solution ', / 妾 species ^ application of a magnetic field to Shi Xi melting solution, existing in the seed 6 translocation Inside the stable part of the state without a solid-liquid interface, it is difficult to translocate. The diameter of the necked part that has escaped in the left and right directions must be reduced to 2 m. Therefore, in the conventional MCZ method, the necked part is in the helmet magnetic field In the single crystal manufacturing method of the present invention, the diameter center m of the necked portion may be sufficient. The axis is the time axis (min T, a time diagram of the relationship between the pull and the applied magnetic field. Horizontal [T] (tesla). The vertical axis is the pull-up 0N, 0FF and magnetic field strength, and stop ΛΛ of seed 6 at H 'Stop enclosing the pull-up lead 5' (min) on the time axis. In Figure 4, after the pull-up stop time point is set to degrees, the magnetic field ^ 6 device ^ 6 stops the pull-up state. 'After 1 5 A magnetic field is applied in a course of 4 minutes. The magnet 丨 f 1 magnet 15 excites and starts to raise the silicon melting solution. In the first case, the passage of the field time is gradually increased by 0.3 to 0.4. 7054.5628.PF (Nl), Chentf.ptd Page 15 200307065 Description of the invention (u) Magnetic medium of magnet 1 & or at any time == rate can also be a fixed value with respect to the passage of time, as shown in the figure Zhi magnetic == chemical material. The rate of increase of the magnetic field intensity is controlled by the private diameter as in the second diameter. For example, the magnetic field control number Γ6ϊ on the solid-liquid interface 1 7 :: / According to the photography of the television camera 19 Adjusting the day and day 16 can change the output of the magnet 15. The magnetic field strength of 15 is increased to-16 to produce a strong magnetic field + a desired value. After making it for more than 15 minutes, < start to surround the pull-up lead 5. It is best to go around and then start to surround the pull-up lead 5. This is second to the diameter of the necked portion 丨 7 of the pull-up speed, as described in As shown in Figure 3, when the magnetic field is applied, the single crystal 7 is thickened to a desired diameter, and is drawn in a shape; J =; ,, part. For example, when manufacturing a semiconductor wafer with a diameter of 300 mm = under the mouth, early Since the diameter of the crystal 7 is enlarged to be slightly larger than 300 inm, it is generally a straight body. At this time, the magnetic field can be maintained or fixed, or it can be changed according to the change of the diameter of the shape: ... f In the conventional technical description, as the magnetic field strength is increased, the temperature of silicon 1 ^ 4 is unstable and violently changes up and down. In this state, it does not advance and the shoulder expansion process. However, the magnetic field strength must be maintained for 5 minutes or more. It is proved that the temperature of the two bath liquid 4 is stable, and the state of the solid-liquid interface is also stable. N ^

K

200307065

In the first embodiment, in a state where the seed crystal 6 is stopped from being pulled up, the magnetic field intensity is gradually increased from no magnetic field, and the magnetic field intensity is maintained at a constant value until the magnetic field intensity is increased to a predetermined value. Then, after a considerable time has elapsed for the temperature change of the silicon melt solution 4 to stabilize, the pull-up of the seed crystal 6 is started, and the process is shifted to the shoulder expansion process. As a result, in order to converge the variation of the convection structure of the silicon melt solution 4, the shoulder expansion process can be performed after the temperature of the melt solution is stabilized, and the shape of the silicon single crystal 7 to be pulled up becomes easy to manufacture. Since the necking is performed in a magnetic field-free state, even when the diameter of the necked portion 17 is large, the non-translocation of the silicon single crystal 7 can be effectively achieved. Second Embodiment Next, a method for manufacturing a semiconductor single crystal will be described. In the first embodiment, a magnetic field is applied to the silicon melt solution 4 to increase the intensity of the magnetic field ', even if the temperature of the middle silicon melt solution 4 fluctuates up and down, but the average value decreases. For this reason, in the second embodiment, the temperature control of the heater 3 will be performed together. m First 'As in the first embodiment, the seed crystal 6 is held by the seed clip 8 provided at the lower end of the pull-up lead 5, and the seed crystal 6 is brought into contact with the silicon melt solution 4. Then, as shown in FIG. 2, the crucible 2 and the seed crystal 6 surround the lead wire 5 while rotating 'and pull the seed crystal 6 upward. In the seeding in which the seed crystal 6 is brought into contact with the silicon melt solution, 'in order to eliminate the translocation transmitted from the slip indexing which occurs in the seed crystal 6 at a high density, a seed crystal with a diameter of 2 · 7 mm becomes 5 mm—as thin as , And necking to form the necked portion 17 is performed. When necking is performed, the surrounding of the pull-up lead 5 is stopped, and the pull-up of the seed crystal 6 is stopped.

7054-5628-PF (Nl); Chentf.ptd p. 17

200307065 V. Description of the invention (13) In Figure 5, the time chart showing the relationship between the heater temperature and the applied magnetic field. The horizontal axis is the time axis, and the vertical axis is (a) pull-up On, 0ff, (b) heater temperature [° C], (c) silicon melt solution temperature [° C], and (d) magnetic field strength [T ] (tesla). In Fig. 5, the pull-up stop point is set to 0 [m i η] on the time axis. Stop pulling the seed crystal 6 (Figure 5a), and after 1 to 5 minutes, the set temperature of the heater 3 is raised by the temperature controller 14 (Figure 5b). In the second embodiment, it is set to a temperature higher than the ordinary heater temperature by 0 ° to 20 ° C. As the temperature of the heater 3 rises, the temperature of the silicon melt solution 4 also rises (Figure 5c). After μ Λ silicon, the field control field *. In the case of magnetic field control, the field intensity is controlled by the field. 16

It takes 5 to 5 minutes for the temperature of the melting solution 4 to stabilize. After a considerable period of time for which the temperature of the silicon melt solution 4 has been stabilized, the magnet 15 is excited by the magnet 16 and the magnetic field strength of the magnetic melt solution 15 applied to the silicon melt solution 4 is gradually increased with the passage of time. In the example, the chemical fee 1 rises 7 days 0.3 to 0.41 es (a, the rise rate of the magnet worker 5 can also be compared to the pass between the temples and μ 胄, or the change: the magnetic field can also be changed. The rate of intensity increase is shown in Fig. 2: Yi 16 is programmed. For example, the diameter of the solid-liquid interface 17 is one: two, one, the television camera 19 adjusts the magnetic field protection, and the magnet 15 protects the magnetic field. The output changes.

Figure 5 shows that the magnetic field strength gradually rises. In the initial stage of the heater 3, due to the stone n / A cut, for example, the convective structure of the molten solution 4 Λ: Xiyi: Valley 4 changes sharply, and the degree changes sharply. Therefore, expressed in

7054-5628-PF (Nl), Chentf ptd Page 18 200307065 V. Description of the invention (14) In the picture, in the magnetic field, 'use a television camera' 9 pairs of neck necks that stop pulling up. When taking a picture, the temperature of the heater 3 is actively adjusted by actively adjusting the temperature of the heater 3 by adjusting the temperature controller 14 by observing the display 21, thereby stabilizing the temperature of the Shixirong solution 4. In addition, the temperature controller 14 that offsets the temperature fluctuation of the liquid 4 that is accompanied by the magnetic field fluctuation may be programmed. The intensity rises to a desired value, and the degree becomes constant by the magnetic field control. Then, the intensity of the magnetic field is set to -15, and it starts to surround the pull-up lead 5. It is best to start around the pull-up lead 5 after 15 knives or more. At this time, with respect to the diameter of the necking portion 17 of the pull-up speed, the temperature state of the Shi Xirong solution 4 is determined, and the time is small. The temperature correction operation of the heater 3 is entered. $ 要 蛉 Growth phase. J moved to ί 肩 in the shoulder expansion process, as shown in Figure 3, under the state of applying a magnetic field to expand the household private system 'Bold the early crystal 7 to the desired caliber, pull the first month of clothes unit. For example, in Luo Qugu a Q Λ Λ Α, Chengdi 1 πτ 口 口 πday 7 In semiconductor k wafers with a diameter of 300 mm, the thickness is larger, and the diameter of the opening day 7 is enlarged Mouth condition slightly larger than 300_ into a straight body. At this time, the magnetic field may be kept straight or the shape of the aperture may be changed and changed. Early crystallization of 7 mf. In the towel of the second embodiment, the temperature rise of the heater 3 offsets the decrease in the temperature of the silicon melt solution 4 when a magnetic field is applied. Neck constriction is suppressed, and the magnetic field of γ-bath 4 is slow. The temperature of solution 4 is rising on average. If the temperature is suppressed, Shi Xirong will reach a temperature of 3.

200307065 V. Description of invention (15) The decline is even better. In the semiconductor single crystal manufacturing apparatus 1 shown in FIGS. 1 to 3 that implements the first or second embodiment, the seed crystal 6 is pulled up or stopped, and the temperature controller 14 and the magnetic field controller 16 are pulled. The control can be performed by a known control device, and the automatic control can be performed. Effects of the Invention In the method and apparatus for manufacturing a single crystal of the present invention, a semiconductor single crystal having a large diameter and a large weight can be safely pulled up, and the necked portion will not break. Further, in the method and apparatus for manufacturing a single crystal of the present invention, the necking portion can be effectively removed during the necking process.

7054-5628-PF (Nl), Chentf ptd Page 20 200307065 Brief Description of Drawings Fig. 1 shows the state of pulling up a single crystal in the single crystal manufacturing apparatus of the present invention, and is a longitudinal sectional view. Fig. 2 is a longitudinal sectional view showing a state in which the single crystal production apparatus of the present invention has stopped pulling up the single crystal. Fig. 3 is a longitudinal sectional view showing a state in which the single crystal manufacturing apparatus according to the present invention is performing a shoulder expanding process. Fig. 4 is a timing chart showing the relationship between the pull-up ON and OFF and the applied magnetic field in the first embodiment. Figure 5a is the ON and OFF pull-ups; Figure 5b is the heater temperature; Figure 5c is the silicon melt solution; Figure 5d is the time chart showing the magnetic field strength. Fig. 6 is a vertical sectional view showing the outline of a conventional single crystal manufacturing apparatus. DESCRIPTION OF SYMBOLS 1 ~ Single crystal manufacturing device; 2 ~ Crucible; 2a wide, quartz crucible; 2b ~ graphite 1 # pot 2c production-crucible support shaft; 3, V heater; 1 4 chopping and melting solution; 5-V lead ; 6 ~ seed crystal, 7 ~ single crystal;) 8 ~ seed crystal cool, 9 'V cavity; 10-~ discharge port; 11 ~ insulation tube •, 12-^ supply port; 13 ~ vacuum pump 14-^ Temperature controller; 15 to magnet; 16 to magnetic field controller; 17 to neck

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7054-5628-PF (Nl), Chenf.ptd Page 22

Claims (1)

200307065 6. Scope of patent application 1. One kind of operation is to stop the above in the absence of a magnetic field and stop the above due to the magnetic field state. 2. To apply, apply the magnetism to the desired strength. 3. To apply, the temperature control is stopped. 4 · A single method without magnetic field and the above will be stopped and the above will be performed. 5 · If the application method is used, the temperature of the solution will be stabilized. 6 · If the application method is used, the above silicon melting will be stopped. 7 · If applied The state of the crystal The seed is raised on the seed The strength of the seed is pulled up Before and after the patent field Description of the state of the crystal The state of the seed is crystallized The seed is melted in seconds The patent is above Shi Xiding ’s patent The above-mentioned liquid above the patented manufacturing method is characterized by the following: a process of pseudo-pulling and shrinking the front end of the seed crystal; the silicon melt solution contacts and pulls, and starts to exert force π to prevent the field from rising to the desired level Strong households each of the above seeds. In the manufacturing method described in item 1 of the applied magnetic field or the increase in magnetic field strength, the manufacturing method of said method is to perform the above-mentioned melting of silicon, $ ^, or the method described in item 1 of the magnetic field strength increase. Temperature control. In the state of pull-up, the manufacturing method of the two crystals is the method of manufacturing the above-mentioned silicon melt solution, which is characterized in that the silicon melt solution in the process of making the front of the seed crystal ☆ pull and contract is brought into contact with and pulled; the temperature of the liquid After control, 3 of the 3rd or 4th item = magnetic field. The temperature of the molten solution is manufactured by the manufacturing method of 晶, 、, and D crystals. 浐 + 乂 is manufactured by applying the magnetic field after melting the silicon. The manufacturing method of L · Ml ^ rTh iP 4 ^ as described in item 2 or 4 is pulled up and the temperature control is performed according to the &amp; & The only changes are described below. <Manufacturing method of early crystallization, the star warrior described in item 1 7054-5628-PF (Nl), Chentf.ptd Page 23 200307065 6. Scope of patent application Where the above pull-up is started again, &quot; Temperature control of silicon melt solution. σ, before the shoulder-expanding process, perform the above-mentioned 8. As stated in the patent scope ^ Among them, the temperature control of the first liquid after the pull-up is started again. The temperature of the melting solution is changed, and the above is followed. 9. A single a B-made 仃 仃 sand melting solution, including: a heater, heating the molten, melting solution, raw material melting solution of ΓΒ, a pull-up device, The 5 'single crystal in the crises; the surface of the Luo liquid is in contact with the seed crystals, and the magnetic field is applied by the device to apply a magnetic field; the cavity houses the above components. It is characterized by ... Then, pull up the seed crystal and contact the Shi Xirong solution, and start to apply a magnetic field; τ stop the above seed crystal due to the strength of the magnetic field to rise to the desired strong state, like: 'Restart The above-mentioned seed crystal is pulled up; it has a "pull-up: magnetic field pull-up device" and the above-mentioned magnetic field application device. The above-mentioned single crystal production device is controlled, including: Crucible: Contains a raw material melt solution that grows appropriate single crystals · Heating Fast, heat the molten solution; 'Pull-up device, contact the seed crystal on the surface of the molten solution in the accident, and grow Page 24 7054-5628-PF (Nl), Chentf ptd 200307065 6. Application scope _ Single crystal; Magnetic field A device that applies a magnetic field; and a cavity that houses the above-mentioned components; characterized in that: after controlling the heater, after the time for stabilizing the temperature of the chopping and melting solution, excite the magnetic field application device to a desired magnetic field strength, It also has a control device for controlling the heater and the magnetic field applying device. 7054-5628-PF (Nl), Chentf ptd Page 25