CN101228299A - Silicon single crystal drawing device and method thereof - Google Patents
Silicon single crystal drawing device and method thereof Download PDFInfo
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- CN101228299A CN101228299A CNA2005800511631A CN200580051163A CN101228299A CN 101228299 A CN101228299 A CN 101228299A CN A2005800511631 A CNA2005800511631 A CN A2005800511631A CN 200580051163 A CN200580051163 A CN 200580051163A CN 101228299 A CN101228299 A CN 101228299A
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Abstract
A quartz crucible retaining silicon melt is rotated at a prescribed rotating speed, and a silicon single crystal bar pulled from the quartz crucible is rotated at a prescribed rotating speed. A first coil and a second coil having the rotating center of the crucible at the center are arranged in a vertical direction at a prescribed interval, and currents of the same direction are permitted to flow in the first and the second coils to generate a magnetic field. The first coil is arranged outside a chamber, and the second coil is arranged inside the chamber. An intermediate position of the prescribed interval between the first and the second coils is controlled to be at a surface of the silicon melt or below so that a distance between the intermediate position and the surface of the silicon melt is 0mm or more but not more than 10,000mm.
Description
Technical field
The present invention relates to when giving the silicon melt outside Longitudinal Magnetic-field Has devices and methods therefor that silicon single crystal bar is lifted from silicon melt.
Background technology
In the past, the method for the known cultivation silicon single crystal bar of people had the Czochralski method (hereinafter referred to as the CZ method) that makes the high purity silicon single crystal rod growth that semi-conductor uses the fused solution in crucible.In the CZ method, utilize the silicon melt that is arranged in the quartz crucible carbon-point heater heats quartz crucible on every side, and maintain certain temperature, allow the etched seed crystal of mirror contact with silicon melt, allow this seed crystal rotation also constantly lift then, generate silicon single crystal bar.In the method for cultivation of this silicon single crystal bar, when lifting seed crystal, after silicon melt formation seed crystal constriction, crystallization is grown up gradually, up to the diameter that reaches the target silicon single crystal bar, at this moment forms shoulder, then, further lift, form the stretched part of single crystal rod.
Simultaneously, in the silicon crystallization, contain impurity.As impurity, comprising: doping agents such as the boron that have a mind to add in order to adjust resistivity, phosphorus, and lift in the process from the stripping of quartz crucible wall, be blended into oxygen in the fused solution etc.When forming silicon chip, because therefore the quality of above-mentioned impurity meeting left and right sides silicon chip must suitably be controlled by silicon single crystal bar.Especially, the impurity uniform distribution on the whole in order to allow in the silicon chip makes the impurities concentration distribution of the radial direction in the silicon single crystal bar evenly extremely important.
Consider this point, in recent years, when using the Czochralski method pulling single crystal, give to add the static magnetic field that produces by superconducting coil on the fused solution in the crucible, thus technology (the MCZ method of the thermal convection that produces in the control silicon melt; Magnetic Field Applied Czochralski Method) obtains using.As this static magnetic field, known have transverse magnetic field (for example, patent documentation 1: the spy opens clear 61-239605 communique), longitudinal magnetic field (for example, patent documentation 2: the spy opens flat 10-279380 communique) and cusped magnetic field (for example, patent documentation 3: the spy opens the 2003-2782 communique) three classes.Facts have proved, in the MCZ method, control, can make the temperature-stable of fused solution by convection current to silicon melt, and the dissolving that reduces the crucible that fused solution causes.
Summary of the invention
But, under the situation of transverse magnetic field, for the surface or the horizontal section arbitrarily of silicon melt, under various angle of rotation, externally-applied magnetic field equably.For transverse magnetic field being added to certain direction on the horizontal plane electro-magnet is set, thus when producing by a side electro-magnet to the magnetic field of the electro-magnet of other directions, the Distribution of Magnetic Field that adds direction and parallel direction is widely different with the Distribution of Magnetic Field that adds direction and vertical direction, simultaneously, the strongest by silicon melt central authorities, along with the distance from central authorities strengthens and dies down, the result can not to silicon melt outward in addition wherein axle be the rotational symmetry uniform magnetic field.
Longitudinal magnetic field is added by the 1st and the 2nd coil with mutually the same coil diameter bigger than the external diameter of quartz crucible, the the described the 1st and the 2nd coil is a hub of a spool with the turning axle of quartz crucible respectively, and the interval that separates regulation in vertical direction sets.Therefore, so long as the longitudinal magnetic field that is produced by such the 1st and the 2nd coil just can add axisymmetric magnetic field equably to silicon melt.But, because the convection current of silicon melt is controlled by the Lorentz force of magnetic field generation, so its magnetic field if longitudinally, then can not prevent to concentrate to the central surface of silicon melt from the impurity such as oxygen that the stripping of quartz crucible wall is blended in the fused solution.Thereby exist can not fully reduce since the central surface of silicon melt draw the problem that is caused, be blended into silicon single crystal bar as the oxygen of impurity over to one's side.
On the other hand, the cusped magnetic field is by having the 1st and the 2nd coil of the mutually the same coil diameter bigger than the external diameter of quartz crucible, turning axle with quartz crucible is a hub of a spool respectively, separate predetermined distance in vertical direction and be configured, make the 1st to cross the opposite electric current of direction with the 2nd coil midstream and produce.For this reason, use the cusped magnetic field, near the silicon melt the quartz crucible inner peripheral surface is added transverse magnetic field, can prevent effectively that being blended into impurity such as oxygen in the fused solution from the stripping of quartz crucible wall concentrates to the central surface of silicon melt and enter silicon single crystal bar.But, under the situation of cusped magnetic field,, have the problem that can not control solid-liquid interface shape by magnetic field because the magneticstrength of the solid-liquid boundary vicinity below silicon single crystal bar is zero.Especially, in recent years, people are attempting making the inner silicon single crystal bar that does not have the aggregate of silicon type point defect between lattice by the control solid-liquid interface shape, therefore, have increased the importance of control solid-liquid interface shape.
The object of the present invention is to provide that a kind of to access with described central shaft be axisymmetric uniform magnetic field in silicon melt, can prevent that impurity such as block concentrates to the central surface of silicon melt, and can effectively control the silicon single-crystal pullup apparatus and the method thereof of the solid-liquid interface shape under the silicon single crystal bar.
In single crystal pulling apparatus of the present invention, the quartz crucible that retains silicon melt that is arranged in the furnace chamber is rotated with predetermined rotational speed, and silicon single crystal bar is rotated with predetermined rotational speed, in silicon melt, lift, at this moment, the turning axle that the interval that vertically separates regulation sets respectively with crucible is the 1st coil and the 2nd coil at center, respectively the 1st coil and the 2nd coil is passed in the same way electric current, makes thus between the 1st and the 2nd coil and produces magnetic field.The present invention is arranged on the 2nd coil in the furnace chamber by the 1st coil is arranged on outside the furnace chamber, and the single crystal pulling apparatus of said structure is improved.
In above-mentioned silicon single-crystal pullup apparatus, if in the 1st and the 2nd coil respectively by the electric current of equidirectional, then see consequent magnetic field from the side, the description curve that demonstrates magnetic line of force be downward diameter diminish coniform.In this cone shape magnetic field, evenly added towards the magnetic field of silicon melt central authorities, the result can give silicon melt outward in addition described central shaft be axisymmetric uniform magnetic field.
This coniform magnetic field has the characteristic of longitudinal magnetic field and transverse magnetic field respectively.By the horizontal composition in magnetic field, can prevent to be blended into impurity such as oxygen in the fused solution to the concentrating of the central authorities of silicon melt, thereby the oxygen that can fully reduce as impurity is blended in the single crystal rod from the stripping of quartz crucible wall.
Even because near the magneticstrength of the coniform magnetic field solid-liquid interface under the silicon single crystal bar can not become zero yet, therefore can control the shape of above-mentioned solid-liquid interface by magnetic field.
The pulling apparatus of the silicon single crystal bar of said structure, the 1st coil and the 2nd coil are above 0 and below 10000mm in the interval T of vertical direction, the diameter D of the 1st coil
1Below the above 10000mm of 100mm, the diameter D of the 2nd coil
2Below the above 5000mm of 5mm, the diameter D of the 1st coil
1Diameter D with the 2nd coil
2Ratio be more than 1 below 2000, and the wall thickness of furnace chamber periphery is when being made as t, the diameter D of the 1st coil
1Deduct the diameter D of the 2nd coil
2Value also can be more than 2t.
Adopt above-mentioned silicon single-crystal pullup apparatus, can adjust near the magneticstrength the solid-liquid interface under the silicon single crystal bar effectively, thereby can control the shape of solid-liquid interface effectively by this magnetic field.As preferred condition, T is above 0 and below 8000mm, the diameter D of the 1st coil
1Below the above 5000mm of 500mm, the diameter D of the 2nd coil
2Below the above 500mm of 50mm.
In silicon single-crystal pullup method of the present invention, the quartz crucible that retains silicon melt that is arranged in the furnace chamber is rotated with predetermined rotational speed, and silicon single crystal bar is rotated with predetermined rotational speed, in silicon melt, lift, at this moment, outside above-mentioned furnace chamber, with the turning axle of above-mentioned quartz crucible be the hub of a spool setting have than the bigger coil diameter of furnace chamber external diameter the 1st coil, in above-mentioned furnace chamber, along separating the interval T of regulation with the vertical direction of above-mentioned the 1st coil, setting is the 2nd coil of hub of a spool with the turning axle of quartz crucible, respectively the above-mentioned the 1st and the 2nd coil is passed in the same way electric current, make thus between the above-mentioned the 1st and the 2nd coil and produce magnetic field.
In above-mentioned single crystal pulling method, when the distance between the surface of the mid-way of the predetermined distance T of the 1st and the 2nd coil and above-mentioned silicon melt is made as H, the control mid-way below the surface of silicon melt or its, satisfy 0mm≤| H|≤10000mm part.
In the method for pulling up of above-mentioned silicon single-crystal, the control mid-way on the surface of silicon melt or the distance between the surface of below it so that mid-way and silicon melt satisfy 0mm≤| H|≤10000mm, simultaneously in case lift silicon single crystal bar, the then convection current of generation regulation in silicon melt.By this convection current, in the past below greatly the shape of solid-liquid interface of projection return to and the liquid level equal height, and near smooth.As a result, the thermograde of the vertical direction of silicon single crystal bar is also near evenly, can produce all flawless high-quality silicon single crystal bar in the scope of total length almost with comparalive ease.If | H| surpasses 10000mm, and then the magneticstrength (magnetic flux density) in the fused solution is not enough, makes the control of oxygen and solid-liquid interface shape become very difficult.As preferred range, can be 0mm≤| H|≤500mm.
In the method for pulling up of above-mentioned silicon single-crystal, the electric current that passes through in the 1st coil is made as I
1, the electric current that passes through in the 2nd coil is made as I
2The time, feed I for the 1st coil and the 2nd coil
1And I
20.1～10
30The scope of A and satisfied 0.001≤(I
1/ I
2The electric current of)≤1000, the magneticflux-density of the internal diameter equivalent site of control mid-way and quartz crucible is 0.001～1.0T (Wb/m
2).
In the method for pulling up of above-mentioned silicon single-crystal, can adjust near the magneticstrength the solid-liquid interface under the silicon single crystal bar effectively, thereby can produce the inner silicon single crystal bar that does not have the aggregate of silicon type point defect between lattice.If the magneticflux-density of the internal diameter equivalent locations of the quartz crucible in mid-way is less than 0.001T (Wb/m
2), then, the magneticstrength (magneticflux-density) in the fused solution can not fully control oxygen, if surpass 1.0T (Wb/m because making inadequately
2), then because the convection current in the fused solution is not enough, thereby can not control the shape of solid-liquid interface fully.As preferred condition be: I
1And I
2100～10
10The magneticflux-density of the internal diameter equivalent locations of the quartz crucible in A and mid-way is 0.01～0.5T (Wb/m
2).
The effect of invention
In silicon single-crystal pullup apparatus of the present invention, because the 1st coil is set outside furnace chamber, the 2nd coil is set, so, can be seen from the side that then the magnetic line of force curve is the coniform magnetic field that downward diameter diminishes if pass to electric current in the same way for respectively the 1st and the 2nd coil in furnace chamber.In this coniform magnetic field, can add equably towards the magnetic field of silicon melt central authorities, the result, just can give silicon melt outward in addition described central shaft be axisymmetric uniform magnetic field.Conical magnetic field has the characteristic of longitudinal magnetic field and transverse magnetic field respectively, by horizontal composition, can prevent to be blended into the impurity such as oxygen of silicon melt to the concentrated phenomenon of fused solution central surface from the stripping of quartz crucible wall.And then even near the solid-liquid interface under the silicon single crystal bar, the magneticstrength in conical magnetic field can not become zero yet, thereby can be used for the control of solid-liquid interface shape.
In the method for pulling up of silicon single-crystal of the present invention, when the distance between the surface of the mid-way of the predetermined distance T of the 1st and the 2nd coil and silicon melt is made as H, because the control mid-way on the surface of silicon melt or below it satisfy 0mm≤| the position of H|≤10000mm, so in silicon melt, produce the convection current of regulation.By these convection current, in the past below greatly the shape of solid-liquid interface of projection return to and the liquid level equal height, and near smooth.As a result, the thermograde of the vertical direction of silicon single crystal bar is also near evenly, can produce all flawless high-quality silicon single crystal bar in the scope of total length almost with comparalive ease.In this case, the electric current that passes through at the 1st coil is made as I
1, the electric current that passes through in the 2nd coil is made as I
2The time, as long as feed I for the 1st coil and the 2nd coil
1And I
20.1～10
30The scope of A, and satisfy 0.001≤(I
1/ I
2The electric current of)≤1000, the magneticflux-density of control mid-way and quartz crucible internal diameter equivalent site is 0.001～1.0T (Wb/m
2), just can adjust near the magneticstrength the solid-liquid interface under the silicon single crystal bar effectively, thereby can produce the inner silicon single crystal bar that does not have the aggregate of silicon type point defect between lattice.
The simple declaration of accompanying drawing
[Fig. 1] is the synoptic diagram of structure of the silicon single-crystal pullup apparatus of expression embodiment of the present invention.
[Fig. 2] is the enlarged view that concerns between expression coil of described device and the crucible.
[Fig. 3] is the A-A line sectional view that expression is applied to Fig. 2 of the field direction on the silicon melt of described crucible.
[Fig. 4] is based on the husband of Warren section theory, and V/G than when stagnation point is following, then forms the synoptic diagram of the dominant ingot bar of silicon type point defect concentration between lattice than the formation emptying aperture dominant ingot bar of type point defect concentration when stagnation point is above and at V/G.
The explanation of symbol
11 furnace chambers
12 silicon melts
13 quartz crucibles
25 silicon single crystal bars
41 the 1st coils
42 the 2nd coils
43 magnetic fields
The mid-way at the interval of 43a the 1st and the 2nd coil
Distance between the mid-way of H predetermined distance T and the surface of silicon melt
D
1The diameter of the 1st coil
D
2The diameter of the 2nd coil
The T predetermined distance
The wall thickness of t furnace chamber periphery
Embodiment
Below, implement best mode of the present invention based on description of drawings.But, the invention is not restricted to each following embodiment.
Fig. 1 represents silicon single-crystal pullup apparatus 10 of the present invention.Inside at this device furnace chamber 11 of 10 is provided with the quartz crucible 13 that retains silicon melt 12, is coated with graphite brace table 14 at the outside surface of this quartz crucible 13.The bottom of crucible 13 is situated between and is fixed on the upper end of back shaft 16 by graphite brace table 14, and the bottom of this back shaft 16 is connected on the crucible drive unit 17.Though do not illustrate drive unit 17, but this part has the 1st of quartz crucible rotation is rotated with motor and the lifting motor that makes the quartz crucible lifting, by these motors, quartz crucible 13 can rotate along prescribed direction, can also move along the vertical direction simultaneously.The outside surface of quartz crucible 13 is surrounded by the well heater 18 of distance quartz crucible 13 certain intervals, and these well heater 18 insulation tubes 19 surround.18 pairs of well heaters are put into high purity silicon polycrystalline in the quartz crucible 13 and are heated and make it fusion, to form silicon melt 12.
In the upper end of furnace chamber 11, be connected with sleeve pipe 21 cylindraceous.On this sleeve pipe 21, be provided with pulling apparatus 22.Pulling apparatus 22 possesses that be arranged on sleeve pipe 21 upper ends rotatable under horizontality lifts head (not diagram), the 2nd rotation that makes this rotation with motor (not have diagram), from the head the rotation center of vertical quartz crucible 13 electric wire 23 and be arranged on being involved in or emitting the lifting of electric wire 23 of above-mentioned head with motor (not having to illustrate).Be equipped with in the lower end of electric wire 23 and be immersed in the seed crystal 24 that silicon fusion 12 is used to lift silicon single crystal bar 25.
In furnace chamber 11, the silicon single crystal bar side that is connected with to this furnace chamber 11 provides rare gas element, and gives arranging device 28 with this rare gas element from the inner surface of crucible side expellant gas of furnace chamber 11.Gas possesses for arranging device 28 one to terminate on the wall of sleeve pipe 21, an other end is connected air-supply duct 29 and on the storage tank (not have diagram) that stores above-mentioned rare gas element and terminates at the vapor pipe 30 that the lower wall of furnace chamber 11, an other end are connected vacuum pump (not having to illustrate).On air-supply duct 29 and vapor pipe 30, be respectively arranged with the 1st and the 2nd flow control valve 31,32 of regulating the inert gas flow that flows through described pipe 29,30.
On the other hand, the output shaft (not diagram) that lifts with motor is provided with demoder (not diagram), and crucible drive unit 17 is provided with the demoder (not diagram) of the lifting position that detects back shaft 16.The detection output of 2 demoders is connected to the control input end of controller (not having diagram), and the control output end of controller then is connected to the lifting that lifts usefulness motor and crucible drive unit of above-mentioned pulling apparatus 22 with on the motor.And, on controller, be provided with storer (not diagram), in this storer, corresponding to the length of batching of the electric wire 23 of the detection output of demoder, promptly the length that lifts of silicon single crystal bar 25 is remembered as the 1st figure.Simultaneously, in storer, remember as the 2nd figure corresponding to the liquid level of the silicon melt 12 in the quartz crucible that lifts length 13 of silicon single crystal bar 25.The lifting motor of controller control crucible drive unit 17 is so that remain on certain level based on the liquid level that lifts the silicon melt 12 in the quartz crucible of exporting with the detection of the demoder in the motor 13 always.
Between the internal surface of the outside surface of silicon single crystal bar 25 and quartz crucible 13, be provided with the thermal insulation member 36 of the outside surface that surrounds silicon single crystal bar 25.This thermal insulation member 36 forms cylindric, possess the thermal-radiating tube portion 37 of covering well heater 18 and be connected in the top of this one 37, with the outwardly directed flange portions 38 of level of approximation direction.By above-mentioned flange portions 38 is placed on the heat-preservation cylinder 19, make the lower end of tube portion 37 be positioned at the position that predetermined distance is only arranged from silicon melt 12 surfaces, thereby thermal insulation member 36 is fixed in the furnace chamber 11.And the bottom in this one 37 is provided with direction expansible dilation 39 in tube.
In the pulling apparatus 10, be provided with respectively turning axle with quartz crucible 13 and be hub of a spool, along vertical direction the 1st coil 41 and the 2nd coil 42 of predetermined distance T at interval.The 1st coil 41 is arranged on the outside of furnace chamber 11, and the 2nd coil is arranged on the inside of furnace chamber 11.As shown in Figure 2, the interval T of using the vertical direction of the 1st coil 41 and the 2nd coil 42 is below the 0 above 10000mm, the diameter D of the 1st coil 41
1Below the above 10000mm of 100mm, the diameter D of the 2nd coil 42
2Be the device below the above 5000mm of 5mm.And the 1st coil 41 and the 2nd coil 42 are arranged to the diameter D of the 1st coil 41
1Diameter D with the 2nd coil 42
2Ratio be more than 1 below 2000, when the peripheral wall thickness of furnace chamber 11 is t (Fig. 1), the diameter D of the 1st coil 41
1Deduct the diameter D of the 2nd coil 42
2Value be more than the 2t.This pulling apparatus 10 is constructed as follows: passes to electric current in the same way respectively by giving the 1st and the 2nd coil 41,42, makes 41,42 of the 1st and the 2nd coils produce magnetic field 43, thus pulling single crystal rod 25.
Below, the method for pulling up that uses this silicon single-crystal pullup apparatus is described.
Allow the quartz crucible 13 that has silicon melt 12 with fixing speed R
1Rotation makes the silicon single crystal bar 25 that is lifted from silicon melt 12 with predetermined rotational speed R
2Rotation, and use the 1st and the 2nd coil 41,42 to silicon melt 12 externally-applied magnetic fields 43, from above-mentioned silicon melt 12, lift above-mentioned silicon single crystal bar 25 simultaneously.If pass to electric current in the same way for respectively the 1st and the 2nd coil 41,42, then as shown in Figure 2, because the 1st coil 41 is arranged on the outside of furnace chamber 11, and the 2nd coil is arranged on the inside of furnace chamber 11, and to see that from the side the downward diameter of magnetic line of force diminishes coniform so the magnetic field 43 that is produced by the 1st and the 2nd coil 41,42 just demonstrates.
Fig. 3 has represented to add the state in the magnetic field 43 on the horizontal direction cross section of silicon melt 12 in above-mentioned coniform magnetic field.Conspicuous from Fig. 3, in silicon melt, very even towards the externally-applied magnetic field of the central authorities of fused solution.As a result, just can to silicon melt outward in addition wherein axle be axisymmetric uniform magnetic field.Coniform magnetic field has the characteristic of longitudinal magnetic field and transverse magnetic field respectively, by horizontal composition, can prevent to concentrate to the central surface of fused solution from the impurity such as oxygen that are blended into silicon melt of quartz crucible wall stripping.As a result, just can fully reduce and sneak into to silicon single crystal bar 25 as the oxygen of impurity.
Even near the solid-liquid interface under the silicon single crystal bar, the magneticstrength in above-mentioned conical magnetic field can not become zero yet.For this reason, just make the control of solid-liquid interface shape become possibility, based on the husband of Warren section theory, from silicon melt 12, lift silicon single crystal bar 25 by the pull rate that adopts regulation, can produce the inner silicon single crystal bar that does not have silicon type point defect aggregate between lattice.Here, the so-called Warren husband of section theory is meant, the pull rate of establishing silicon single crystal bar be thermograde in the silicon single crystal bar of V (mm/ branch), silicon single crystal bar and silicon melt 12 near interfaces be G (℃/mm) time, in order to allow high purity silicon single crystal rod 25 growths, control V/G (mm with few defective
2/ minute ℃) value.
For the husband of Warren section theory, with V/G is X-coordinate, and silicon type point defect concentration is all ordinate zou between emptying aperture type point defect concentration and lattice, and the relation between V/G and the point defect concentration as shown in Figure 4, explanation thus, the border of silicon area is decided by V/G between emptying aperture zone and lattice.In more detail, exactly when the ratio of V/G be positioned at more than the stagnation point the time form emptying aperture type point defect concentration advantage silicon single crystal bar, the ratio of V/G then forms the dominant silicon single crystal bar of silicon type point defect concentration between lattice when stagnation point is following.In Fig. 4, silicon type point defect is dominant between [I] expression lattice, has the zone ((V/G) of silicon type point defect aggregate between lattice
1Below), and [V] expression is in silicon single crystal bar, emptying aperture type point defect is dominant, has the zone ((V/G) of emptying aperture type point defect aggregate
2More than), and [P] expression is all non-existent ideal zone of aggregate ((V/G) of silicon type point defect between the aggregate of emptying aperture type point defect and lattice
1～(V/G)
2).With [V] zone of joining, zone [P] in have the zone ((V/G) that forms OSF nuclear
2～(V/G)
3).
This ideal zone [P] can further be divided into [P again
I] zone and [P
V] zone.[P
I] be that the V/G ratio is from above-mentioned (V/G)
1To the zone between the stagnation point, and [P
V] then be that the V/G ratio is to above-mentioned (V/G) from stagnation point
2Between the zone.That is to say [P
I] and zone [I] adjacency, and be the zone with silicon type point defect between lattice that does not reach silicon type point defect concentration between the minimum lattice that can form intrusion type dislocation, [P
V] and zone [V] adjacency, and be the zone with emptying aperture type point defect that does not reach the lowest empty pass point defect concentration that can form OSF.In addition, above-mentioned OSF is that the tiny flaw of its nuclear when crystal growth is introduced into, because unit operations such as thermooxidizing make this defective significantly change, causes the reason of the leakage current increase of manufactured Component when making semiconducter device.
In Fig. 2, when the mid-way 43a of the predetermined distance T of the 1st coil 41 and the 2nd coil 42 and the distance between silicon melt 12 surfaces are made as H, control mid-way 43a silicon melt 12 the surface or its below with satisfy 0mm≤| H|≤10000mm.And the electric current in establishing the 1st coil 41 is I
1, the electric current in the 2nd coil 42 is I
2The time, feed I for the 1st coil and the 2nd coil
1And I
20.1～10
30The scope of A, and satisfy 0.001≤(I
1/ I
2The electric current of)≤1000, the magneticflux-density of the internal diameter equivalent site of control mid-way 43a and quartz crucible 13 is 0.001～1.0T (Wb/m
2).Here, the mid-way 43a that limits interval T with the reason of the distance H on the surface of silicon melt 12 is, | H| is above in the 10000mm, and a little less than magneticstrength will become, it is very difficult that the control of the convection current of silicon melt 12 will become.And the reason that why will control the electric current in the 1st and the 2nd coil 41,42 is, the increase along with the diameter of quartz crucible 13 is necessary to increase the Lorentz force that can make silicon melt 12 form convection current.And if be set at described scope numerical value in addition, the convection current in the fused solution just can not have Ideal Characteristics, thereby just can not control solid-liquid interface.
As mentioned above, if control the mid-way 43a of predetermined distance T of the 1st and the 2nd coil and the intensity of longitudinal magnetic field 43, then as shown in Figure 2, will in silicon melt 12, produce the convection current 44,45 of regulation.Before can allowing by these convection current 44,45 below greatly the shape of solid-liquid interface 25a of projection return to and the liquid level equal height, and near smooth.And, make quartz crucible 13 with the continuous rotation of predetermined rotational speed and at the rotating silicon single crystal bar 25 that lifts simultaneously, then the radial distribution of the thermograde G of the vertical direction of silicon single crystal bar 25 will become evenly, and the variation that V/G can make radial distance cause reduces.As a result, according to the husband's of Warren section V/G model, can produce all flawless high-quality silicon single crystal bar 25 in the scope of total length almost with comparalive ease.
Industrial applicability
If adopt single crystal pulling apparatus of the present invention to carry out lifting of monocrystalline, then can prevent from stone The stripping of English sidewall of crucible is blended into the impurity such as oxygen of silicon melt and concentrates to the central surface of fused solution, from Sneak into to silicon single crystal bar and can fully reduce as the oxygen of impurity. Adopt single crystal pulling dress of the present invention Put, make the control of the shape at the silicon liquid interface under the silicon single crystal bar become possibility, based on Warren section Husband's theory lifts silicon single crystal bar by the pull rate pattern that adopts regulation from silicon melt, can To produce the inner silicon single crystal bar that does not have the agglomerate of silicon type point defect between lattice.
Claims (4)
1. silicon single-crystal pullup apparatus; Be constructed as follows: the silica crucible that retains silicon melt that is arranged in the furnace chamber is rotated with the rotary speed of regulation; And the silicon single crystal bar that lifts from above-mentioned silicon melt is rotated with the rotary speed of regulation; The interval T that vertically separates regulation sets respectively the 1st coil and the 2nd coil take the rotating shaft of above-mentioned crucible as hub of a spool; Respectively the above-mentioned the 1st and the 2nd coil is passed in the same way electric current; Make thus between the above-mentioned the 1st and the 2nd coil and produce magnetic field; Thereby lift above-mentioned monocrystal rod
It is characterized in that above-mentioned the 1st coil is arranged on outside the above-mentioned furnace chamber, above-mentioned the 2nd coil is arranged in the above-mentioned furnace chamber.
2. the described silicon single-crystal pullup apparatus of claim 1, wherein, the interval T of the vertical direction of the 1st coil and the 2nd coil is for surpassing 0 and below 10000mm, the diameter D of above-mentioned the 1st coil
1Below the above 10000mm of 100mm, the diameter D of above-mentioned the 2nd coil
2Below the above 5000mm of 5mm, the diameter D of above-mentioned the 1st coil
1Diameter D with above-mentioned the 2nd coil
2Ratio be more than 1 below 2000, and when the wall thickness with the furnace chamber periphery is made as t, from the diameter D of above-mentioned the 1st coil
1Deduct the diameter D of the 2nd coil
2Difference more than 2t.
3. silicon single crystal pulling method, it is characterized in that: the quartz crucible that retains silicon melt that is arranged in the furnace chamber is rotated with predetermined rotational speed, and the silicon single crystal bar that lifts from above-mentioned silicon melt is rotated with predetermined rotational speed, outside above-mentioned furnace chamber, with the turning axle of above-mentioned quartz crucible be the hub of a spool setting have than the bigger coil diameter of above-mentioned furnace chamber external diameter the 1st coil, in above-mentioned furnace chamber, along separating the interval T of regulation with the vertical direction of above-mentioned the 1st coil, setting is the 2nd coil of hub of a spool with the turning axle of above-mentioned quartz crucible, respectively the above-mentioned the 1st and the 2nd coil is passed in the same way electric current, make thus between the above-mentioned the 1st and the 2nd coil and produce magnetic field, thereby lift above-mentioned single crystal rod
When it is characterized in that the distance between the surface of the mid-way of the predetermined distance T of the 1st and the 2nd coil and above-mentioned silicon melt is made as H, the control mid-way below the surface of silicon melt or its so that satisfy 0mm≤| H|≤10000mm.
4. the described silicon single crystal pulling method of claim 3, wherein, the electric current that passes through in the 1st coil is made as I
1, the electric current that passes through in the 2nd coil is made as I
2The time, feed I for the 1st coil and the 2nd coil
1And I
20.1～10
30The scope of A and satisfied 0.001≤(I
1/ I
2The electric current of)≤1000, the magneticflux-density of the internal diameter equivalent site of control mid-way and quartz crucible is 0.001～1.0T (Wb/m
2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005800511631A CN101228299A (en) | 2005-07-27 | 2005-07-27 | Silicon single crystal drawing device and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNA2005800511631A CN101228299A (en) | 2005-07-27 | 2005-07-27 | Silicon single crystal drawing device and method thereof |
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| CN101228299A true CN101228299A (en) | 2008-07-23 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102220633A (en) * | 2011-07-15 | 2011-10-19 | 西安华晶电子技术股份有限公司 | Production technology of semiconductor grade silicon single crystal |
| CN102912427A (en) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | Drawing process for 1.6 meters single crystal rod |
| CN106995935A (en) * | 2017-05-23 | 2017-08-01 | 天津市环欧半导体材料技术有限公司 | It is a kind of to improve the doper of zone-melted silicon single crystal radial direction resistivity distribution |
-
2005
- 2005-07-27 CN CNA2005800511631A patent/CN101228299A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102220633A (en) * | 2011-07-15 | 2011-10-19 | 西安华晶电子技术股份有限公司 | Production technology of semiconductor grade silicon single crystal |
| CN102220633B (en) * | 2011-07-15 | 2012-11-07 | 西安华晶电子技术股份有限公司 | Production technology of semiconductor grade silicon single crystal |
| CN102912427A (en) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | Drawing process for 1.6 meters single crystal rod |
| CN102912427B (en) * | 2011-08-01 | 2015-06-17 | 苏州东泰太阳能科技有限公司 | Drawing process for 1.6 meters single crystal rod |
| CN106995935A (en) * | 2017-05-23 | 2017-08-01 | 天津市环欧半导体材料技术有限公司 | It is a kind of to improve the doper of zone-melted silicon single crystal radial direction resistivity distribution |
| CN106995935B (en) * | 2017-05-23 | 2023-04-18 | 天津中环领先材料技术有限公司 | Doping device for improving radial resistivity distribution of zone-melting silicon single crystal |
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