TW594884B - Laser re-crystallization method of low temperature polysilicon thin film transistor - Google Patents

Laser re-crystallization method of low temperature polysilicon thin film transistor Download PDF

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TW594884B
TW594884B TW092114624A TW92114624A TW594884B TW 594884 B TW594884 B TW 594884B TW 092114624 A TW092114624 A TW 092114624A TW 92114624 A TW92114624 A TW 92114624A TW 594884 B TW594884 B TW 594884B
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active layer
layer
thin film
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silicon
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TW200426950A (en
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Ching-Fa Yeh
Tien-Fu Chen
Jen-Chung Lou
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Univ Nat Chiao Tung
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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Description

594884 、發明說明（1) 【發明所屬之技術領域】 本發明是有關於一種低、、西夕曰 雷射再結晶方*，尤产2，皿 電晶體主動廣之 品額外先罩，且同時達到提升元件 、日曰粒皮大二 與節省製程成本之功效。 ’ ^向元件均勾度 【先前技術】 一般傳統非晶矽薄膜電晶體液晶 TFT LCD)目為價格持續_，再加上低溫員 (LTPS)薄膜電晶體液晶顯示器在小尺寸的夕曰曰石夕 二及J該低溫多晶石夕的薄膜電晶體液晶顯解析 度、党度、尺寸及電磁干擾等各方面的優勢，=逐漸在 助理、數位相機、行動電話等行動終端設備中 取付£有罕，
其中在傳統雷射退火低溫複晶矽薄膜電晶體（LTpS_ TFTs )❺製造步驟上，會先進行雷射再結晶後再定義電晶 體主動層，可是如此矽晶粒大小會受限於薄膜厚度而無法 變大且不規則的矽晶粒大小分佈於電晶體主動層内會導致 7L件與兀件之間電特性上的差異而使均勻性變差，但是， 右先定義電晶體主動層再進行雷射再結晶，則主動層會因 石夕薄膜全部炫融所造成的表面張力而產生微縮現象 (Surface Tension induced Shrinkage)，如此方法不 適合用於低溫複晶矽薄膜電晶體LTps_TFTs的製造上； 另外薄膜電晶體（TFT )和矽絕緣層上的金屬氧化物半導 體場效電晶體（SOI-M0SFET)等元件其主動層下方為一層
第4頁 594884 五、發明說明（2) 導熱效率較差的絕緣層，如此當元件工作在大電流時，主 動層的溫度會瞬間上升，載子於主動層内的移動率會因此 而下降’便有相關技術者提出將通道寬 道寬度Wl的並聯來改善這自我發熱效應（Self-heating ，=1'第7=示十’、其係為傳統解決自我發熱效應 (Self-heating Effects 的方式，然而將 成很多小通道寬度Wi並聯的方法仍缺叙法 j % 大電流工作時所造成的熱效應問題。 ’解“兀件在 【發明内容】 本發明之主要目的，在於可祐你、西… — (I τρς-TFT ^ ^ ^ ^ '了使低 >皿稷日日矽溥膜電晶體 (LTPS-TFTs)之％效載子移動率提高並可降低元件與元 件之間的差異，利用此方法來製作電晶體時，當通道寬度 越小’通道内的矽晶粒越大’如此用來製作驅動晝素的^ 晶體可使顯示器之解析度大幅提升，此外雷射再結晶的 process window變寬，並且改善複晶石夕薄膜 時使元件與元件間的差異變小，均勾性提升；= 吾艮罕。 龋私、i f明之另一目的’係在於可具有準分子雷射退火後 稃動至2 因此可大幅提升場效載子 1ώ i ) 面電流所產生的熱有效分 ^ _ ° 發熱效應（Sel 卜heat ing Ef f ect )，若利 連續波長雷射對狗骨頭形狀（岭一 動層經源極—汲極（s〇urce —Drain)方向進行掃瞄，
第5頁 594884 五、發明說明（3) 可得到單獨一顆矽晶粒於電晶體通道内的狀況，進而可製 作咼性能（high performance)、高均勻度（g0〇d un i f 〇rm i t y )的複晶矽薄膜電晶體。 為達上述之目的，本創係一種低溫多晶石夕薄膜電晶體 主動層之雷射再結晶方法，包含下列步驟：’ 步驟一 ··提供一基板； 步驟二··該基板上係形成一緩衝氧化層（Buf fer
Oxide );
v = 一 ·在邊緩衝氧化層（B u f f e r 0 x i d e )上沈積一非晶 石夕薄膜層（amorph〇us silicon); 步驟四 沈積一 溫氧化 程時， 逸的保 的硬式 步驟五 將非晶 膜電晶 Mask ) 蝕刻二 往内蝕 •再於該非晶矽薄膜層（amorphous silicon)上 低溫氧化層（L〇w Temperature Oxide)，而該低 層j Low Temperature Oxide )係為了作為後續製 矽4膜乾式钱刻的停止層、雷射退火時防止熱量黄 酿層或作為再結晶後去除間距矽（p〇ly-spacer) 光罩（Hard Mask); 石，後利用一光阻層作為硬式光罩（Hard Masli ) 矽薄，層（amorphous silic〇n )於低溫多晶矽薄
體亡定義為主動層，且於將硬式光罩（Hard =光阻去除之前或去除之後，利用溼式具等方向伯 一化矽的溶液將緩衝氧化層（Buffer 〇xide)稍德 刻； 步驟丄 · si lic" ·再沈積上另一非晶矽薄膜層（amorphous C〇n時’原本之非晶矽薄膜層（amorphous si 1 icon
^94884
)之主動層會與該非晶矽 ,a ，寻暝層（amorphous s 11 1 con ) 相接，再以乾式蝕刻於非曰於咕时兑 ^ ., F日日矽薄膜層兩旁形成間距矽 C poly-spacer )，而該問？ 、进 〇 、、西夕a a” 2而 Ί距石夕（poly 一 spacer)覆盍於低 -R ,. 動層側壁後，可利用高能量連縯 波長雷射（CW-Laser )對狗 UL ^ 、 、 了狗月頭形狀（dog-bone shape ) 的主動層進行再結晶’或以準分子雷射（Excimer a:er)進打再結晶，即可使主動層的矽晶粒變大。 【貫施方式】 Μ參閱 国 丄…1 叫▼丄 』，係本發明之成形之剖面示意 辂日：發明之主動層雷射再結晶後之相對位置俯視圖、本 圖 '本發明在使用⑽雷射再結晶時主動層圖形 # ^ 田射知瞄方向之示意圖。如圖所示：本發明係一種 低^夕晶矽薄膜電晶體主動層之雷射再結晶方法， 列步驟： 步驟一 步驟二 Oxide ) 提供一基板1 ; °玄基板1上係形成一緩衝氧化層2 ( β u f f e r 乂驟了在5玄緩衝氧化層2 (Buffer Oxide)上沈積一非 晶石夕薄膜層 3 (amorphous si 1 icon ); 乂驟四·再於該非晶矽薄膜層3 (amorphous si 1 icon ) ^ 積_ 低，皿氧化層 4 (Low Temperature Oxide)，而 溫氧化層4 (Low Temperature Oxide)係可作為後 $製程時，秒薄膜乾式蝕刻的停止層、雷射退火時防止熱 量散逸的保溫層或作為再結晶後去除間距矽（p〇ly —
594884
spacer)的硬式光罩（Hard Mask) · 步驟五：之後利用一光阻層5作為硬式光
Um〇rPh — er 少曰曰矽溥膜電曰曰體上定義為主動且於將硬式光罩 (Hard Mask)之光阻去除之前或去除之後，，利用渔式呈 等方向性蝕刻二氧化矽的溶液6將緩衝氧化 〃
Oxide )稍微往内蝕刻；
步驟六：再沈積上另一非晶矽薄膜層3a (am〇rph〇us s i 1 i con )時，原本為主動層之非晶矽薄膜層3 (amorphous SiliC0n )會與該另一非晶矽^膜層以 (amorphous SiliC0n )相接，再以乾式蝕刻8於非晶矽 薄膜層3、3a兩旁形成間距矽7 (p〇ly —spacer)，該間 距矽7 (poly-spacer)包括複晶矽薄膜 (polycrystalline Siiic0ri film)與非晶石夕薄膜 (amorphous siliC0n film)所形成的間距（spacer)， 且間距矽7 ( poly-spacer )可以換成介電質（如〇xide、
Nitride、Metal oxide…等）或金屬（如鋁Ai、鎢w、鉬 Μ 〇、鉻C r…）等材料代替，最後再將間距石夕7 ( p 〇 1 y 一
spacer )選擇性去除（或直接留下）後繼續往下的製程， 並於該間距矽7 ( poly-spacer )覆蓋於低溫多晶矽薄膜 電晶體上被定義為主動層之非晶矽薄膜層3側壁後，可用 南此里連續波長雷射對狗骨頭形狀（d〇g-bone shape)的 主動層進行再結晶，或以準分子雷射退火進行再結晶9 ， 即可使主動層產生一溫度梯度，而使矽晶粒變大（如第3
第8頁 594884 五、發明說明（6) 圖所示）；另該利用間距石夕7 ( ρ ο 1 y - s p a c e r )覆蓋於薄 膜電晶體（TFT )或矽絕緣層上的金屬氧化物半導體場效 電晶體（SOI-MOSFET )之主動層側壁（包含填入主動層邊 緣下方處）’不論高、低溫製程都適用此方法，且該間距 矽（poly-spacer)覆蓋於薄膜電晶體（TFT)之主動層側 壁後再進行雷射再結晶’此間距石夕（ρ 〇 1 y - s p a c e r )主要 目的是製造一溫度梯度導致矽薄膜側向再結晶，或可先利 用準分子雷射退火（ELA )、固相結晶（SPC )或金屬致側 向再結晶（Μ I L C )等方法對主動層再結晶後，再覆蓋間距 矽（poly-spacer)於薄膜電晶體（TFT)或矽絕緣層上的⑩ 金屬乳化物半導體场效電晶體（S0I-M0SFET)之主動層側 壁； 由s亥第4圖觀之’其係顯示了閘極1 〇 ( g a t e )與源 極1 1 (Source )、汲極1 2 (Drain )之相對位置，可 看到如此之製程，可使該間距矽7 (p〇iy-Spacer )會環 繞整個主動層（非晶矽薄膜層3 )邊緣，再由第5圖所 示’遠石夕薄膜厚度為500A、線寬為2//m，在準分子雷射退 火後電子顯试鏡下的碎晶粒結晶狀況，可以清楚的看到石夕 晶粒可側向成長1 # m以上，這是因為雷射能量無法使較厚 之主動層邊緣全部熔融，但可輕易讓較薄的通道區域全部 炼融，如此矽晶粒會以間距矽7 (p〇iy-Spacer )為間距 seed而觸發往内再結晶，此外，亦可看到該主動層沒有微 縮（Shrinkage )的現象，所以這方法可以有效的抑制矽 薄膜全部炫融後表面張力所導致的§ h r i n k a g e E f f e c t ;如
第9頁 594884 五、發明說明（7) '~： 此若能引用本發明，不需額外光罩就可將厚的間距矽7 (Poly-Spacer )覆蓋於小通道寬度的側壁上，相信可更 有效地改善自我發熱效應（Seif-heating Effect)，而 該第6圖為此方法在使用⑽雷射再結晶時主動層圖形方位 與雷射知瞒方向之最佳狀況。 2亡：細說明’可使熟知本項技藝者明瞭本 請。刖k目的’實已符合專利法之規定，爰提出專利申 4 淮以上所述者，僅為本發明之較佳frTh P 能以此限定本發明實施之範圍 季乂佳貫：例而已，當不 範圍及釗作說明書 凡依本發明申請專利I· 應仍屬本發明真利r t之間早的等效變化與修掷，皆 〜明專利涵蓋之範圍内。 白 594884
第1、2 第4圖， 圖0 、3圖，係本發明之 係本發明之主動層雷 成形之剖面示意圖。 射再結晶後之相對位置 俯視 第5圖’係本發明之SEM圖。 再結晶時主動層圖形方位 (Self-heating 第6圖’係本發明在使用α雷射 與雷射掃瞄方向之示意圖。 第7圖，習用解決自我發熱效應 Effect )方式之示意圖。 【圖號說明】 基板1 緩衝氧化層2 非晶矽薄膜層3 、3 a 低溫氧化層4 光阻層5 一氣化石夕的溶液6 間距矽7 乾式ϋ刻8 準分子雷射退火進行再結晶9 閘極1 〇 源極1 1 汲極1 2

Claims (1)

  1. 594884 六、申請專利範圍 【申請專利範圍】 1. 一種低溫多晶矽礴膜電晶體主動層之雷射再結晶方法， 包含下列步驟： 步驟一：提供一基板； 步驟二：該基板上係形成一緩衝氧化層（f er Oxide); 步，三：在該緩衝氧化層（Buffer 〇xide)上沈積一非晶 石夕溥膜層（amorphous silicon); v驟四.再於該非晶矽薄膜層sili⑶η)上 ^ ^低溫氧化層（Low Temperature Oxide )，而該低 :氧化層（Low Temperature Oxide)係可作為後續製程 二，矽溥膜乾式蝕刻的停止層、雷射退火時防止熱量散逸 溫層或作為再結晶後去除間距矽（poly-spacer)的 式光罩（Hard Mask); 二ΐ五之後利用一光阻層作為硬式光罩（Hard Mask ) ΪΪΐΪ薄膜層U贿PhQUS Sili_)於低溫多晶石夕薄 、^曰上疋義為主動層，且於將硬式光罩（Hard ,,..匕 除之則或去除之後，利用溼式具等方向性 往二：ί化石夕的溶液將緩衝氧化層（Buffer 〇xide)稍微 步驟六：再沈籍μ s L .1 . 、 非晶石夕薄膜（amorphous si 1 icon )時，屑太+斗。 Φ ^ s . 非日日石夕薄膜（amorphous silicon) 主動層會與此非晶矽續 P 11 ; $ »>； ^ jl ’専膜（amorphous silicon)相接， 冉以乾式蝕刻方式可 饮 飞『於非B日矽薄膜主動層兩旁形成間距石夕
    594884
    (poly-spacer) ’間距矽（p〇iy 一 spacer)覆蓋於低溫多 晶石夕薄膜電晶體之主動層側壁後，可利用高能量連續波長 雷射對狗骨頭形狀（dog-bone shape)的主動層進行再結 晶’或以準分子雷射退火進行再結晶，即可使主動層的石夕 晶粒變大。 2 ·依申請專利範圍第1項所述之低溫多晶矽薄膜電晶體主 動層之雷射再結晶方法，其中，該間距矽（p〇丨7一 spacer)包括複晶石夕薄膜（p〇iyCryStaiiine siiicon film)與非晶矽薄膜（am〇rph〇us siiicon film)所形成 的間距（s p a c e r )。 3 ·依申請專利範圍第i項所述之低溫多晶矽薄膜電晶體主 動層之雷射再結晶方法，其中，該步驟六中利用間距矽 (poly-spacer )覆蓋於薄膜電晶體（TFT)或矽絕緣層 上的金屬氧化物半導體場效電晶體（s〇I—M〇SFET )之主動 層側壁（包含填入主動層邊緣下方處），不論高、低溫製 程都適用此方法。 4 ·依申請專利範圍第1項所述之低溫多晶矽薄膜電晶體主 動層之雷射再結晶方法，其中，該步驟六中利用間距矽 (poly-spacer)覆蓋於薄膜電晶體（TFT)之主動層側壁 後再進行雷射再結晶，此間距石夕（P 〇 1 y _ S P a C e r )主要目 的是製造一溫度梯度導致矽薄膜側向再結晶。 5 ·依申請專利範圍第1項所述之低溫多晶矽薄膜電晶體主 動層之雷射再結晶方法，其中，該步驟六中覆蓋於薄膜電 曰曰體（T F T )之主動層側壁的間距石夕（p 〇 1 y — s p a c e r )可以
    第13頁 594884 ~、申請專利範圍 換成介電質（如Oxide、Nitride、Metal oxide ··•等）或 金屬（如鋁A1、鎢W、鉬Mo、鉻Cr…）等材料代替，最後 再將間距矽（P〇ly-spacer )選擇性去除（或直接留下） 後繼續往下的製程。
    6 ·依申請專利範圍第1項所述之低溫多晶矽薄膜電晶體主 動層之雷射再結晶方法，其中，該步驟六亦可先利用準分 子雷射退火（ELA )、固相結晶（SPC )或金屬致側向再結 晶（ΜI LC )等方法對主動層再結晶後，再覆蓋間距矽 (poly-spacer)於薄膜電晶體（TFT)或矽絕緣層上的金 屬氧化物半導體場效電晶體（SOI-M0SFET )之主動層側 壁 〇
    第14頁
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