TW594407B - Positive type electron beam or x-ray resist composition - Google Patents
Positive type electron beam or x-ray resist composition Download PDFInfo
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- TW594407B TW594407B TW089118102A TW89118102A TW594407B TW 594407 B TW594407 B TW 594407B TW 089118102 A TW089118102 A TW 089118102A TW 89118102 A TW89118102 A TW 89118102A TW 594407 B TW594407 B TW 594407B
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25214199A JP4007569B2 (ja) | 1999-09-06 | 1999-09-06 | ポジ型電子線又はｘ線レジスト組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW594407B true TW594407B (en) | 2004-06-21 |
Family
ID=17233056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089118102A TW594407B (en) | 1999-09-06 | 2000-09-05 | Positive type electron beam or x-ray resist composition |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4007569B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100684146B1 (enrdf_load_stackoverflow) |
| TW (1) | TW594407B (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002092559A1 (fr) * | 2001-05-11 | 2002-11-21 | Wako Pure Chemical Industries, Ltd. | Sels de triphenylsulfonium fluores |
| US6949329B2 (en) | 2001-06-22 | 2005-09-27 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| KR100481667B1 (ko) * | 2001-08-07 | 2005-04-08 | 주식회사 이엔에프테크놀로지 | 안료분산 포토레지스트용 현상액 |
| US7521168B2 (en) * | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
| JP4612999B2 (ja) * | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4439409B2 (ja) * | 2005-02-02 | 2010-03-24 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
| JP4665810B2 (ja) * | 2005-03-29 | 2011-04-06 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| KR20090024246A (ko) | 2006-06-27 | 2009-03-06 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 그것에 이용하는 유기 박막 형성용 조성물 |
| US8119324B2 (en) | 2006-08-04 | 2012-02-21 | Jsr Corporation | Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film |
| JP4621807B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4621806B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5856991B2 (ja) * | 2012-05-21 | 2016-02-10 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法 |
| JP6317012B2 (ja) * | 2017-05-24 | 2018-04-25 | 東京応化工業株式会社 | レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| DE69707635T2 (de) * | 1996-12-24 | 2002-08-08 | Fuji Photo Film Co., Ltd. | Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit |
| KR19990003857A (ko) * | 1997-06-26 | 1999-01-15 | 김영환 | 감광막 형성 방법 |
| JP3741330B2 (ja) * | 1997-07-15 | 2006-02-01 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物及びそれを用いるパターン形成方法 |
-
1999
- 1999-09-06 JP JP25214199A patent/JP4007569B2/ja not_active Expired - Lifetime
-
2000
- 2000-08-31 KR KR1020000051088A patent/KR100684146B1/ko not_active Expired - Lifetime
- 2000-09-05 TW TW089118102A patent/TW594407B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4007569B2 (ja) | 2007-11-14 |
| KR20010030199A (ko) | 2001-04-16 |
| JP2001075283A (ja) | 2001-03-23 |
| KR100684146B1 (ko) | 2007-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |