KR100684146B1 - 포지티브 전자선 또는 엑스선 레지스트 조성물 - Google Patents

포지티브 전자선 또는 엑스선 레지스트 조성물 Download PDF

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Publication number
KR100684146B1
KR100684146B1 KR1020000051088A KR20000051088A KR100684146B1 KR 100684146 B1 KR100684146 B1 KR 100684146B1 KR 1020000051088 A KR1020000051088 A KR 1020000051088A KR 20000051088 A KR20000051088 A KR 20000051088A KR 100684146 B1 KR100684146 B1 KR 100684146B1
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South Korea
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group
acid
atom
electron beam
substituted
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KR1020000051088A
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English (en)
Korean (ko)
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KR20010030199A (ko
Inventor
아데가와유타카
코다마쿠니히코
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
KR1020000051088A 1999-09-06 2000-08-31 포지티브 전자선 또는 엑스선 레지스트 조성물 Expired - Lifetime KR100684146B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-252141 1999-09-06
JP25214199A JP4007569B2 (ja) 1999-09-06 1999-09-06 ポジ型電子線又はｘ線レジスト組成物

Publications (2)

Publication Number Publication Date
KR20010030199A KR20010030199A (ko) 2001-04-16
KR100684146B1 true KR100684146B1 (ko) 2007-02-20

Family

ID=17233056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000051088A Expired - Lifetime KR100684146B1 (ko) 1999-09-06 2000-08-31 포지티브 전자선 또는 엑스선 레지스트 조성물

Country Status (3)

Country Link
JP (1) JP4007569B2 (enrdf_load_stackoverflow)
KR (1) KR100684146B1 (enrdf_load_stackoverflow)
TW (1) TW594407B (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002092559A1 (fr) * 2001-05-11 2002-11-21 Wako Pure Chemical Industries, Ltd. Sels de triphenylsulfonium fluores
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100481667B1 (ko) * 2001-08-07 2005-04-08 주식회사 이엔에프테크놀로지 안료분산 포토레지스트용 현상액
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4612999B2 (ja) * 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4439409B2 (ja) * 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4665810B2 (ja) * 2005-03-29 2011-04-06 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
KR20090024246A (ko) 2006-06-27 2009-03-06 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그것에 이용하는 유기 박막 형성용 조성물
US8119324B2 (en) 2006-08-04 2012-02-21 Jsr Corporation Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
JP4621807B2 (ja) * 2010-04-22 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4621806B2 (ja) * 2010-04-22 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
JP6317012B2 (ja) * 2017-05-24 2018-04-25 東京応化工業株式会社 レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980024818A (ko) * 1996-09-20 1998-07-06 무네유키 마사유키 포지형 감광성 조성물
KR19980064630A (ko) * 1996-12-24 1998-10-07 무네유키마사유키 반사방지막 재료용 조성물 및 그것을 이용한레지스트패턴형성방법
KR19990003857A (ko) * 1997-06-26 1999-01-15 김영환 감광막 형성 방법
KR19990013892A (ko) * 1997-07-15 1999-02-25 무네유키 마사유키 포지티브 포토레지스트 조성물 및 그것을 사용한 패턴형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980024818A (ko) * 1996-09-20 1998-07-06 무네유키 마사유키 포지형 감광성 조성물
KR19980064630A (ko) * 1996-12-24 1998-10-07 무네유키마사유키 반사방지막 재료용 조성물 및 그것을 이용한레지스트패턴형성방법
KR19990003857A (ko) * 1997-06-26 1999-01-15 김영환 감광막 형성 방법
KR19990013892A (ko) * 1997-07-15 1999-02-25 무네유키 마사유키 포지티브 포토레지스트 조성물 및 그것을 사용한 패턴형성 방법

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KR A 10-1998-24818
KR A 10-1998-64630
KR A 10-1999-13892
KR A 10-1999-3857

Also Published As

Publication number Publication date
TW594407B (en) 2004-06-21
JP4007569B2 (ja) 2007-11-14
KR20010030199A (ko) 2001-04-16
JP2001075283A (ja) 2001-03-23

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