JP4007569B2 - ポジ型電子線又はｘ線レジスト組成物 - Google Patents

ポジ型電子線又はｘ線レジスト組成物 Download PDF

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Publication number
JP4007569B2
JP4007569B2 JP25214199A JP25214199A JP4007569B2 JP 4007569 B2 JP4007569 B2 JP 4007569B2 JP 25214199 A JP25214199 A JP 25214199A JP 25214199 A JP25214199 A JP 25214199A JP 4007569 B2 JP4007569 B2 JP 4007569B2
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Japan
Prior art keywords
group
substituted
atom
fluorine atom
acid
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JP25214199A
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English (en)
Japanese (ja)
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JP2001075283A5 (enrdf_load_stackoverflow
JP2001075283A (ja
Inventor
豊 阿出川
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP25214199A priority Critical patent/JP4007569B2/ja
Priority to KR1020000051088A priority patent/KR100684146B1/ko
Priority to TW089118102A priority patent/TW594407B/zh
Publication of JP2001075283A publication Critical patent/JP2001075283A/ja
Publication of JP2001075283A5 publication Critical patent/JP2001075283A5/ja
Application granted granted Critical
Publication of JP4007569B2 publication Critical patent/JP4007569B2/ja
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Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
JP25214199A 1999-09-06 1999-09-06 ポジ型電子線又はｘ線レジスト組成物 Expired - Lifetime JP4007569B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP25214199A JP4007569B2 (ja) 1999-09-06 1999-09-06 ポジ型電子線又はｘ線レジスト組成物
KR1020000051088A KR100684146B1 (ko) 1999-09-06 2000-08-31 포지티브 전자선 또는 엑스선 레지스트 조성물
TW089118102A TW594407B (en) 1999-09-06 2000-09-05 Positive type electron beam or x-ray resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25214199A JP4007569B2 (ja) 1999-09-06 1999-09-06 ポジ型電子線又はｘ線レジスト組成物

Publications (3)

Publication Number Publication Date
JP2001075283A JP2001075283A (ja) 2001-03-23
JP2001075283A5 JP2001075283A5 (enrdf_load_stackoverflow) 2005-07-07
JP4007569B2 true JP4007569B2 (ja) 2007-11-14

Family

ID=17233056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25214199A Expired - Lifetime JP4007569B2 (ja) 1999-09-06 1999-09-06 ポジ型電子線又はｘ線レジスト組成物

Country Status (3)

Country Link
JP (1) JP4007569B2 (enrdf_load_stackoverflow)
KR (1) KR100684146B1 (enrdf_load_stackoverflow)
TW (1) TW594407B (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002092559A1 (fr) * 2001-05-11 2002-11-21 Wako Pure Chemical Industries, Ltd. Sels de triphenylsulfonium fluores
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100481667B1 (ko) * 2001-08-07 2005-04-08 주식회사 이엔에프테크놀로지 안료분산 포토레지스트용 현상액
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4612999B2 (ja) * 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4439409B2 (ja) * 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4665810B2 (ja) * 2005-03-29 2011-04-06 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
KR20090024246A (ko) 2006-06-27 2009-03-06 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그것에 이용하는 유기 박막 형성용 조성물
US8119324B2 (en) 2006-08-04 2012-02-21 Jsr Corporation Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
JP4621807B2 (ja) * 2010-04-22 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4621806B2 (ja) * 2010-04-22 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
JP6317012B2 (ja) * 2017-05-24 2018-04-25 東京応化工業株式会社 レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679205B2 (ja) * 1996-09-20 2005-08-03 富士写真フイルム株式会社 ポジ型感光性組成物
DE69707635T2 (de) * 1996-12-24 2002-08-08 Fuji Photo Film Co., Ltd. Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit
KR19990003857A (ko) * 1997-06-26 1999-01-15 김영환 감광막 형성 방법
JP3741330B2 (ja) * 1997-07-15 2006-02-01 富士写真フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いるパターン形成方法

Also Published As

Publication number Publication date
TW594407B (en) 2004-06-21
KR20010030199A (ko) 2001-04-16
JP2001075283A (ja) 2001-03-23
KR100684146B1 (ko) 2007-02-20

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