JP2001075283A5 - - Google Patents
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- Publication number
- JP2001075283A5 JP2001075283A5 JP1999252141A JP25214199A JP2001075283A5 JP 2001075283 A5 JP2001075283 A5 JP 2001075283A5 JP 1999252141 A JP1999252141 A JP 1999252141A JP 25214199 A JP25214199 A JP 25214199A JP 2001075283 A5 JP2001075283 A5 JP 2001075283A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- acid
- fluorine atom
- electron beam
- substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052731 fluorine Inorganic materials 0.000 claims 12
- 125000001153 fluoro group Chemical group F* 0.000 claims 11
- 239000002253 acid Substances 0.000 claims 10
- 238000010894 electron beam technology Methods 0.000 claims 10
- 125000004122 cyclic group Chemical group 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 4
- 125000006575 electron-withdrawing group Chemical group 0.000 claims 4
- 150000003839 salts Chemical class 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 3
- 150000001768 cations Chemical class 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 229920005989 resin Polymers 0.000 claims 3
- 125000001424 substituent group Chemical group 0.000 claims 3
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 150000001450 anions Chemical class 0.000 claims 2
- ILFFFKFZHRGICY-UHFFFAOYSA-N anthracene-1-sulfonic acid Chemical compound C1=CC=C2C=C3C(S(=O)(=O)O)=CC=CC3=CC2=C1 ILFFFKFZHRGICY-UHFFFAOYSA-N 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims 2
- 229940092714 benzenesulfonic acid Drugs 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 238000004090 dissolution Methods 0.000 claims 2
- 230000002401 inhibitory effect Effects 0.000 claims 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 125000002252 acyl group Chemical group 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 125000006296 sulfonyl amino group Chemical group [H]N(*)S(*)(=O)=O 0.000 claims 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims 1
- -1 sulfonyloxy group Chemical group 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25214199A JP4007569B2 (ja) | 1999-09-06 | 1999-09-06 | ポジ型電子線又はｘ線レジスト組成物 |
| KR1020000051088A KR100684146B1 (ko) | 1999-09-06 | 2000-08-31 | 포지티브 전자선 또는 엑스선 레지스트 조성물 |
| TW089118102A TW594407B (en) | 1999-09-06 | 2000-09-05 | Positive type electron beam or x-ray resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25214199A JP4007569B2 (ja) | 1999-09-06 | 1999-09-06 | ポジ型電子線又はｘ線レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001075283A JP2001075283A (ja) | 2001-03-23 |
| JP2001075283A5 true JP2001075283A5 (enrdf_load_stackoverflow) | 2005-07-07 |
| JP4007569B2 JP4007569B2 (ja) | 2007-11-14 |
Family
ID=17233056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25214199A Expired - Lifetime JP4007569B2 (ja) | 1999-09-06 | 1999-09-06 | ポジ型電子線又はｘ線レジスト組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4007569B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100684146B1 (enrdf_load_stackoverflow) |
| TW (1) | TW594407B (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002092559A1 (fr) * | 2001-05-11 | 2002-11-21 | Wako Pure Chemical Industries, Ltd. | Sels de triphenylsulfonium fluores |
| US6949329B2 (en) | 2001-06-22 | 2005-09-27 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| KR100481667B1 (ko) * | 2001-08-07 | 2005-04-08 | 주식회사 이엔에프테크놀로지 | 안료분산 포토레지스트용 현상액 |
| US7521168B2 (en) * | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
| JP4612999B2 (ja) * | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4439409B2 (ja) * | 2005-02-02 | 2010-03-24 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
| JP4665810B2 (ja) * | 2005-03-29 | 2011-04-06 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| KR20090024246A (ko) | 2006-06-27 | 2009-03-06 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 그것에 이용하는 유기 박막 형성용 조성물 |
| US8119324B2 (en) | 2006-08-04 | 2012-02-21 | Jsr Corporation | Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film |
| JP4621807B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4621806B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5856991B2 (ja) * | 2012-05-21 | 2016-02-10 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法 |
| JP6317012B2 (ja) * | 2017-05-24 | 2018-04-25 | 東京応化工業株式会社 | レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| DE69707635T2 (de) * | 1996-12-24 | 2002-08-08 | Fuji Photo Film Co., Ltd. | Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit |
| KR19990003857A (ko) * | 1997-06-26 | 1999-01-15 | 김영환 | 감광막 형성 방법 |
| JP3741330B2 (ja) * | 1997-07-15 | 2006-02-01 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物及びそれを用いるパターン形成方法 |
-
1999
- 1999-09-06 JP JP25214199A patent/JP4007569B2/ja not_active Expired - Lifetime
-
2000
- 2000-08-31 KR KR1020000051088A patent/KR100684146B1/ko not_active Expired - Lifetime
- 2000-09-05 TW TW089118102A patent/TW594407B/zh not_active IP Right Cessation