TW591724B - Adhesive film for semiconductor, lead frame and semiconductor device using the same - Google Patents

Adhesive film for semiconductor, lead frame and semiconductor device using the same Download PDF

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Publication number
TW591724B
TW591724B TW091116913A TW91116913A TW591724B TW 591724 B TW591724 B TW 591724B TW 091116913 A TW091116913 A TW 091116913A TW 91116913 A TW91116913 A TW 91116913A TW 591724 B TW591724 B TW 591724B
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TW
Taiwan
Prior art keywords
adhesive
adhesive film
film
lead frame
semiconductors
Prior art date
Application number
TW091116913A
Other languages
English (en)
Inventor
Yoshiyuki Tanabe
Hidekazu Matsuura
Original Assignee
Hitachi Chemical Co Ltd
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Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Application granted granted Critical
Publication of TW591724B publication Critical patent/TW591724B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • C—CHEMISTRY; METALLURGY
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
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    • C09J2479/08—Presence of polyamine or polyimide polyimide
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
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Description

591724 A7 ____B7 五、發明説明（”） 曼J5所屬的技術f酉诚 (請先閱讀背面之注意事項再填寫本頁) 本發明係有關半導體用黏著薄膜，及使用其之附有半 導體用黏著薄膜之導線架與半導體裝置。 i前技術 近年’半導體晶片係關於由於高機能大容量化而呈大 型化’另一方面收容此晶片之封裝體的大小，由印刷電路 3受計上的規制’電子機器小型化之要求等，係被要求較小 的外形。對應於此傾向，已對應於半導體晶片之高密度化 及高密度化實際封裝的新實際封裝方式有若干件被提出著 。其中’右依對記憶體兀件亦予提出的於晶片之上黏著導 線之在晶片上的導線（L e a d Ο n C h i p . L 0 C )構造時，貝ij 可謀求晶片內佈線或連線銲接之合理化，由縮短佈線而得 信號高速化，及封裝體尺度之小型化。 經濟部智总財產局員工消費合作社印製 在此新的實際封裝形態，存在著半導體晶片及導線架 類不同種材料間之接著界面，該接著可靠性對半導體封裝 體之可靠性有非常大的影響。能耐封裝體組合作業時之工 程溫度的可靠性，黏著作業性當然無庸置疑，於半導體封 裝體可靠性之一指標的溫度循環性試驗，在連接半導體晶 體及導線架之連線不引起斷線一事亦爲重要的項目。 向來，於此等的黏著方面，以漿狀黏著劑，塗布至耐 熱性基材者乃被使用著。至於其方法之一，可舉出採用聚 醯亞胺樹脂之熱熔膠型黏著劑薄膜（參閱日本特開平5 — 105850 號，5-11276 0 號、 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ~〜 -4- 591724 A7 B7 五、發明説明（2 ) 5 - 1 1 2 7 6 1號）。然而，熱熔膠型黏著劑，由於黏 著劑樹脂之玻璃轉移溫度較高，黏著所需的溫度即變成非 常高’再者近年對已高密度化的半導體晶片或銅製導線架 類被黏著材，給予熱損害之顧慮較大。 另一方面，至於爲滿足半導體封裝體之溫度循環性而 被要求的黏著薄膜之特性，係線膨脹係數低至接近半導體 晶片或導線架之線膨脹係數般，爲鬆弛由溫度循環發生的 應力，以低貯藏彈性係數係有必要的。然而，貯藏彈性係 數若過低時，則於半導體封裝體製造步驟之連線銲接時即 有半導體晶片及導線架未能接合的問題存在。 隨著半導體之積體度增加，再於信號處理之高度化， 導線架之材質由4 2合金正改變成銅。由黏貼膠帶及黏貼 晶片時之熱引起的銅之氧化，又爲改善由銅及晶片之熱膨 脹係數之差引起的熱應力，低溫黏著性及溫度循環性乃被 要求著。 發明之摘述 因此，本發明係於半導體裝置，以提供導線架及半導 體元件之低溫黏著係可能的，溫度循環性亦良好的半導體 用黏著薄膜爲目的。 另外的目的，係提供與半導體元件間之低溫黏著係可 能的，可提供可靠性較高的半導體裝置之附有黏著薄膜之 導線架。 再者另一目的，係提供由低溫黏著可能且溫度循環性 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 衣· 訂 經濟部智慧財產局工消費合作社印製 -5- 591724 A7 ____ B7 _ 五、發明説明（3 ) 亦良好的黏著薄膜經予黏著而成之可靠性優越的半導體裝 置。 (請先閱讀背面之注意事項再填寫本頁) 本發明人等，經繼續開發出低溫黏著性及半導體裝置 之溫度循環性可同時成立的半導體用黏著薄膜之開發的結 果’採用已具有特定的特性之黏著劑，將於支持薄膜之兩 面上具有該黏著劑之兩面上的黏著薄膜之整體厚度規定成 特定的範圍，發現可解決前述問題。 因此，若依本發明之第一形態時，係提供由支持薄膜 及經予形成於前述支持薄膜之兩面上的黏著劑層而成之半 導體用黏著薄膜，前述黏著劑層係由玻璃轉移溫度 2 0 0 °C以下，線膨脹係數7 0 p p m以下，貯藏彈性係 數3 GP a以下的黏著劑而成，且黏著薄膜整體之厚度爲 4 3〜5 7 //m之半導體用黏著薄膜。 若依本發明之第二形態時，係提供含有導線架及經予 黏著至前述導線架上之上述本發明有關的半導體用黏著薄 膜之附有半導體用黏著薄膜之導線架。 經濟部智慧財產局員工消費合作社印製 若依本發明之第三形態時，則提供包含導線架及半導 體元件之半導體裝置，前述導線架及前述半導體元件係介 由與上述本發明有關之半導體用黏著薄膜經予相互黏著的 半導體裝置。 圖式之簡單說明 第1圖係模式的表示與本發明有關之半導體用黏著薄 膜之一實施形態的截面圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' ~~^ .4 - 6 - 591724 A7 _ B7 五、發明説明（5 ) 厚度2 5 之支持薄膜的兩面上形成厚度1 2 . 5 //m 之黏著劑層經予形成的整體之厚度5 0 /zm，面積1 9x 5 0 m m之三層構造的黏著薄膜試樣在3 5 0 t：，3 Μ P a ，1分鐘之條件下加熱壓著之際，由前述黏著薄膜 試樣之長邊，在長邊方向之中央部測定吐出的黏著劑之長 度的値。藉由將黏著劑之吐出長度設爲上述者，即使在 T g較低時，亦可良好的保持封裝體之重要的特性之耐平 坦化熱處理龜裂性。 至於具有上述特性之黏著劑，宜爲採用以聚醯亞胺樹 脂或聚醯胺樹脂等所代表的耐熱性之熱塑性樹脂之一種以 上爲主成分的黏著劑（黏著劑組成物）。在此，聚醯亞胺 樹脂係意指具有聚醯胺醯亞胺樹脂、聚酯醯亞胺樹脂、聚 醚醯亞胺樹脂等之醯亞胺基的樹脂，由聚醯胺酸之熱或化 學閉環而得者，由黏著強度之觀點，宜爲採用含有醯胺基 之樹脂。在此，醯胺基係於醯亞胺閉環後亦殘存的醯胺基 ，不含有醯亞胺前驅體之醯胺酸中的醯胺基。此醯胺基， 對醯亞胺基及醯胺基（醯亞胺閉環後亦殘存的醯胺基）之 合計量，由接著強度之觀點宜爲1 〇莫耳％以上，由吸水 率之觀點宜爲9 0莫耳％以下，較宜爲2 〇〜7 0莫耳％ 以下，更宜爲3 0〜5 0莫耳％。 於較佳的實施形態，黏著劑所含的樹脂，基本上係由 二胺（A )及/或二異氰酸酯（a > )與酸酐（B )及/ 或二羧酸或其醯胺形成性衍生物（C )所合成，上述指定 的各種特性，亦即使T g線膨脹係數及貯藏彈性係數成爲 本紙張尺度適用中國國家標準f CNS)A4規格（210x297公羡) ~ -8 - (請先閲讀背面之注意事項再填寫本頁) 衣·
、1T 經濟部智慈財產局員工消費合作社印製 591724 A7 B7 五、發明説明（6 ) (請先閱讀背面之注意事項再填寫本頁) 指定値般’再者宜爲對此等的反應成分之組合，其反應比 反應條件，分子量對黏著劑之有無添加劑及其種類，環氧 樹脂等的添加樹脂等進行調整至上述的黏著劑之吐出長度 成指定的値。 至於上述一胺（A )，例如可舉出六亞甲二胺、八亞 甲二胺、十亞甲二胺等的伸烷二胺、對伸苯二胺、間伸苯 二胺、間伸甲苯基二胺等伸芳基二胺、4，4 /二胺基二 苯基醚（DDE) 、4，4 — 一二胺基二苯基甲烷、4， 4 — 一二胺基二苯基硕、3 ’ 3 > —二胺基二苯基硕、4 ，4 / 一二胺基二苯酮、3，3 / —二胺基二苯酮、4， 經濟部智慧財產局員工消費合作社印製 4 / -二胺基苯甲醯苯胺等二胺基二苯基衍生物、1 ，4 一雙（4 —胺基異丙苯基）苯（BAP) 、1 ，3 —雙（ 4 一胺基異丙苯基）苯、1，3 -雙（3 -胺基苯氧基） 苯、1 ，4 —雙（3 -胺基苯氧基）苯、1 ，4 一雙（4 一胺基苯氧基）苯、2 ’ 2 —雙〔4 一（4 一胺基苯氧基 )苯基〕丙烷（BAPP) 、2，2 —雙〔4 一（3 —胺 基苯氧基）苯基〕丙烷、雙〔4 一（3 -胺基苯氧基）苯 基〕砸（m — APPS)、雙〔4— (4 一胺基苯氧基） 苯基〕硕、2，2 -雙〔4 一（4〜胺基苯氧基）苯基〕 六氟丙院，及下述一般式（1 )表示的二胺，下述一般式 (2 )表示的矽氧烷二胺等。此等二胺係可單獨使用或組 合各種使用。 一般式（1 ): 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ' ' " -9 - 591724 A7 B7 五、發明説明（
R2
(式內，Y及γ/係表示胺基，R1
R
R R 4係 各自獨立的氫或碳數1〜4之烷基或烷氧基，此等之中至 少二個以上係烷基或烷氧基，X係一 C Η 2 -、一 C ( CH3) 2 —、一〇一 、一S〇2 — 、一 C〇一或 一NHCO—表不的基。） (請先閲讀背面之注意事項再填寫本頁) 衣. 般式（2 ) R6 H2N—R—Si~ -?6 一O-Si- R7 -R—NH2 、1Τ 經濟部智慧財產局員工消費合作社印製 基-3，3 / 一二胺基一 3 (式內，R5及R6係各自獨立的二價有機基，R6及R7 係各自獨立的一價有機基，η爲1〜100之整數）。 至於上述一般式（1 )表示的化合物，具體而言可舉 出：4，4 ――二胺基—3 ，3 / ，5 ，5 > —四甲基二 苯基曱烷、4，4> —二胺基—3 ，3' ，5 ，5四 乙基二苯基甲烷、4，4 / —二胺基—3，3，，5， 5 > -四正丙基二苯基甲烷、4，4二胺基—3 ， 3 /，5，5 / -四異丙基二苯基曱烷、4，4 ——二胺 5，5— —四丁基二苯基甲烷、4，4一 3 ——二甲基—5 ，5 > —二乙基二苯基 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） -10- 591724 A7 B7 五、發明説明（8 ) 曱烷、4 ，4二胺基—3 ，3> —二甲基 一5 ，5^ 一二異丙基二苯基甲烷、4，4 / 一二胺基一 3，3 / -二乙基—5 ，5 / -二異丙基二苯基甲烷、4，4 〃 一二 胺基一 3 ，5 -二曱基一 3 /，5 / —二乙基二苯基甲烷 、4，4^ —二胺基—3 ，5 —二甲基—3 一，5^ —二 異丙基二苯基甲烷、4，4 > 一二胺基一 3 ，5 -二乙基 一 3 /，5 / -二異丙基二苯基甲烷、4，4 > 一二胺基 一 3 ，5 -二乙基一 3 ―，5 / -二丁基二苯基甲烷、4 ，4 > 一二胺基一 3，5 -二異丙基一 3 /，5 — -二丁 基二苯基甲烷、4，4 / 一二胺基一 3，3 / -二異丙基 一 5 ，5 — -二丁基二苯基甲烷、4，4 / 一二胺基—3 ，3 > —二甲基一5 ，5 / —二丁基二苯基甲烷、4 ， 4— 一二胺基—3 ，3 > -二乙基二苯基甲烷、4， 一二胺基一 3 ，3 / —正丙基二苯基甲烷、4，4 — 一二 胺基一 3 ，3 > -二異丙基二苯基甲烷、4，4 / 一二胺 基一 3 ，3 / -二丁基二苯基甲烷、4，4 / —二胺基一 3 ，3 /，5 —三甲基二苯基甲烷、4，4 — 一二胺基一 3 ，3 >，5 -三乙基二苯基甲烷、4，4'一二胺基一 3，3 /，5 -三正丙基二苯基甲烷、4，4/ 一二胺基 一 3 ，，5 —三異丙基二苯基甲烷、4，一二胺 基一 3 ，3 >， 5 - 三丁基二苯基甲烷、 4 ，4 > - ： 二胺 基- 3 一甲基一 3 ^ -乙基_^苯基甲院、 4 ，4 / - ： 二胺 基一 3 一甲基一 3 / -異丙基二苯基甲烷 Λ 4 ，4 / - —一 胺基—3 —乙基—3 / —異丙基二苯基甲烷、4，4 / - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 衣·
、1T 經濟部智慧財產局員工消費合作社印製 -11 - 591724 A7 B7 五、發明説明（9 ) 二胺基一 3 -乙基一 3 > -丁基二苯基甲烷、4，4 — 一 二胺基一 3 -異丙基一 3 > -丁基二苯基甲烷、4，4 — 一二胺基—2 ，—雙（3 ，，5 ，5一 —四甲基 二苯基異丙烷、4，4 / 一二胺基一 2，2 > —雙（3， 3 / ，5 ，5 / —四乙基二苯基）異丙烷、4，4 — 一二 胺基一 2，2> —雙（3，，5，5> -四正丙基二 苯基）異丙烷、4，4 / 一二胺基—2，2 — -雙（3， 3 / ，5，5 / -四異丙基二苯基）異丙烷、4，4 / — 二胺基一 2，- 雙（3 ，3 — ，5 ，5>— 四丁基二 苯基）異丙烷、4，4> —二胺基—3，，5， —四甲基二苯基醚、4，4 — 一二胺基—3 ，3 — ，5 ， 5 > —四乙基二苯基醚、4，4 / —二胺基—3 ，3 一， 5，-四正丙基二苯基醚、4，4>一二胺基一 3， 3 / ，5，5 — -四正丙基二苯基醚、4，4 — 一二胺基 一 3 ，，5 ，5— -四異丙基二苯基醚、4，4>一 二胺基一 3，3 — ，5，5 / -四丁基二苯基醚、4， 4> —二胺基一 3 ，，5 ，5> -四甲基二苯基硕、 4，4，一二胺基—3，，5，5> —四乙基二苯基 碼、4，4，一二胺基一 3，3，，5，5> —四正丙基 二苯基砸、4，4^ —二胺基—3，3^ ，5，5，—四 異丙基二苯基硕、4，4>一二胺基一 3，，5， 5 — -四丁基二苯基硕、4，4 /一二胺基—3，3，， 5，5 / —四甲基二苯基酮、4，4 / —二胺基一 3 ， ，5 ，5 — -四乙基二苯基酮、4，4>一二胺基— 本紙張尺度適用中國國家標準（CNS ) A4規格（210>< 297公釐） - I - - - - I .-y—II -Λ· _ - —1 I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -12- 591724 -A7 _____B7 五、發明説明（1〇) 3，3 / ，5，5>-四正丙基二苯基酮、4，4^ —二 胺基—3，3 / ，5，5，一四異丙基二苯基酮、4， (請先閲讀背面之注意事項再填寫本頁) 4> —二胺基—3，，5，5> —四丁基二苯基酮、 4 ，4 一一二胺基一3 ，3〆，5 ，5〆一四甲基苯甲醯 苯胺、4，4>一二胺基—3，3，，5，5，一四乙基 苯甲醯苯胺、4，4 / —二胺基—3，3 / ，5，5 > — 四正丙基苯甲醯苯胺、4，4 / —二胺基一 3，3 /，5 ’5 —四異丙基苯甲醯苯胺、4，4 一二胺基一 3 ， ，5 ，5 > —四丁基苯甲醯苯胺等。 至於上述一般式（2 )中的R5及R8，宜爲採用各 自獨立的三亞甲基、四亞甲基、伸苯基、伸甲苯基，至於 R6及R7係宜爲各自獨立的甲基、乙基、苯基等，複數 個R 6及複數個R 7可爲相互相同，亦可爲不同。於一般 式（2 )之矽氧烷二胺，R5及R8係任一者均爲三亞甲 基，R6及R7係任一者均爲甲基時，m爲1 ，平均1 〇 經濟部智慧財產局Μ工消費合作社印製 前後者，平均2 0前後者，平均3 0前後者，平均5 0前 後者及平均1 0 0前後者，各依順序存以L P - 7 1 0 0 、X-22—161AS，X—22-161A、X-22- 161B、X-22-161C 及X-22- 1 6 1 E (任一者均爲信越化學工業（股）商品名）予以 上市著。 至於上述二異氰酸酯基（A > )，於上述例示的二胺 ，宜爲可採用將胺基取代成異氰酸酯基者，此等係可單獨 使用或組合複數種使用。 本紙張尺度適用中國國家標準了CNS ) A4規格（210X297公釐） " — -13- 591724 A7 __ B7 '^______—---- 五、發明説明（1彳） 至於上述酸酐（B )，可舉出偏苯三酸酐、苯均四酸 二酐、3，3 > ，4，4，—二苯酮四羧酸二酐（ (請先閱讀背面之注意事項再填寫本頁) B 丁 D A ) 、3 ，3 > ，4，> —聯苯基四羧酸二酐、2 ’ 2 -雙苯二甲酸六氟異亞丙基二酐、雙（3，4 一二羧 基苯基）醚二酐、雙（3，4 一二羧基苯基）硕二酐、4 ，4，一雙（3，4 一二羧基苯氧基）二苯基硕二酐、2 ’ 2 -雙〔4 一（3，4 一二羧基苯氧基）苯基〕丙烷二 酐、乙二醇雙偏苯三酸酯二酐（E B T A )，十亞甲二醇 雙偏苯三酸酯二酐（D B T A )、雙酚A雙偏苯三酸酯二 酐（BABT) 、2，2 —雙〔4 — (3，4 —二羧基苯 基苯甲醯氧基）苯基〕六氟丙烷二酐、4，4 / 一〔 1 ， 4 -伸苯基雙（1 -甲基亞乙基）〕雙苯基雙偏苯三甲酸 酯二酐、順丁烯二酐、甲基順丁烯二酐、nadic酸酐、烯 丙基nadic酸酐、甲基nadic酸酐、四氫苯二甲酐、甲基 四氫丁烯二酐等。此等可單獨使用或組合複數種使用。 經濟部智慈財產局員工消費合作社印製 至於二羧酸或其醯胺形成性衍生物（C )，可舉出對 苯二甲酸、間苯二甲酸、聯苯基竣酸、苯二甲酸、萘二竣 酸、聯苯基醚二羧酸等，至於此等二羧酸之醯胺形成性衍 生物，可舉出此等的二羧酸之二氯化物、二烷基酯等。又 以胺基苯甲酸等胺基羧酸取代二胺（A )、二羧酸（C ) 之一部分亦可。此等係可單獨使用，亦可組合複數種使用 〇 至於二胺（A )，較宜爲伸烷二胺、間伸苯基二胺、 間伸甲苯二胺、4，4 /二胺基二苯基醚（D D E ) 、4 本紙張尺度適用中國國家標準（CNS ) A4規格（21(^ 297公釐1 " " 14- 591724 A7 B7 五、發明説明（12) ，4 — 一二胺基二苯基甲烷、4，4 — 一二胺基二苯基硕 、3，3 — -二胺基二苯基砸、3，3 — -二胺基二苯酮 、1 ，3 -雙（4 —胺苯異丙苯基）苯、1 ，4 一雙（4 一胺基異丙苯基）苯、1，3 -雙（3 -胺基苯氧基）苯 、1 ，4 一雙（3 -胺基苯氧基）苯、1 ，4 一雙（4 一 胺基苯氧基）苯、2，2 -雙〔4 一（4 一胺基苯氧基） 苯基〕丙烷（BAPP)、雙〔4 一（3 -胺基苯氧基） 苯基〕硕（m - APPS)、雙〔4 一（4 一胺基苯氧基 )苯基〕硕、2，2 -雙〔4 一（4 一胺基苯氧基）苯基 〕六氟丙烷、4，4 / —二胺基—3，3 — ，5，5 > — 四甲基二苯基甲烷、4，4 / —二胺基一3 ，3 / ，5 ， 5 > —四乙基二苯基甲烷、4，4 / —二胺基—3 ，3 / ，5 ，5 / —四異丙基二苯基甲烷、4，4 二胺基— 3 ，3 / -二甲基—5 ，5 > —二乙基二苯基甲烷、4， 4 — 一二胺基一 3，3 / -二胺基一 5，5 / —二異丙基 一苯基甲院、4 ’ 4 — —^胺基一 3 ’ 3 - —^乙基—5 ，5 — -二異丙基二苯基甲烷、4，4 / 一二胺基一 3， 3 二甲基二苯基甲烷、4，4 / 一二胺基一 3 ，3 一 一 一^乙基一苯基甲院、4 ’ 4 — 一胺基—3 ，3 -一 異丙基二苯基甲烷，兩者可使用以LP - 7 1 0 0、X — 22 — 161AS、X— 22 — 161A之商品名經予上 市的上述一般式（2 )之矽氧烷二胺。 至於酸酐（B )，可採用偏苯三甲酸酐、3 ，3 / ， 4，一二苯酮四羧酸二酐（BTDA) 、2，2 -雙 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、1Τ 經濟部智慧財產局員工消費合作社印製 -15- 591724 A7 B7 五、發明説明（13) (請先閲讀背面之注意事項再填寫本頁) 苯二甲酸六氟二亞丙基二酐、雙（3，4 一二羧基苯基） 醚二酐、雙（3，4 一二羧基苯基）硕二酐、4，4 / 一 雙（3，4 一二羧基苯氧基）二苯基硕二酐、2，2 -雙 〔4 一（3，4 —二羧基苯氧基）苯基〕丙烷二酐、乙二 醇雙偏苯三甲酸酯二酐（E B T A )、十亞甲二醇雙偏苯 三甲酸酯二酐（D B T A )、雙酚A雙偏苯三甲酸酯二酐 (BABT) 、4，4/ —〔1，4 —伸苯基雙（1—甲 基亞乙基）〕雙苯基雙偏苯三甲酸酯二酐、順丁烯二酸酐 J nadic酸酐、烯丙基nadic酸酐。 經濟部智慧財產局員工消費合作社印製 黏著薄膜所用的黏著劑，係爲使與支持薄膜間之附著 性提高，亦可含有偶合劑。至於偶合劑，例如宜爲使用r 一（2 -胺基乙基）胺基丙基三甲氧基矽烷、r 一（2 -胺基乙基）胺基丙基甲基二甲氧基矽烷、r -曱基丙烯氧 基丙基三甲氧基矽烷、r -甲基丙烯氧基丙基甲基二甲氧 基矽烷、r -環氧丙氧基丙基三甲氧基矽烷、τ -環氧丙 氧基丙基甲基二曱氧基矽烷、r -酼基丙基三曱氧基矽烷 、乙烯基三乙氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三 甲氧基矽烷、乙烯基三氯矽烷、r -氯丙基三甲氧基矽烷 、苯胺基丙基三甲氧基矽烷、r -脲基丙基三乙氧基 矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、六甲基二 矽烷等矽烷偶合劑；異丙基三異硬脂醯基酞酸鹽、異丙基 三辛醯基鈦酸鹽、異丙基十三基苯磺醯基鈦酸鹽、異丙基 參（二辛基熱磷酸酯）鈦酸鹽等鈦酸鹽系偶合劑；及乙醯 基烷氧基鋁二異丙酸酯等鋁系偶合劑。此等可單獨使用或 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） i -16 - 591724 A7 ______ B7 五、發明説明（14) (請先閲讀背面之注意事項再填寫本頁) 組合複數種使用。偶合劑之添加量，對接著劑中的耐熱熱 塑性樹脂1 0 0重量分，宜爲〇 · 5〜2 0重量分，較宜 爲2〜1 〇重量分。添加量若超過2 0重量分時，則被發 現有耐熱性及與導線架或半導體元件間之黏著性降低的傾 向。 再者’接著劑係含有環氧樹脂及其硬化劑、硬化促進 劑與陶瓷粉、玻璃粉、銀粉、銅粉等的塡充劑亦可。至於 此環氧樹脂，若爲對每1分子具有平均2個以上的環氧基 時即可’並未予特別限制，惟例如可舉出雙酚A之二縮水 甘油基醚、雙酚F之二縮水甘油基醚、酚酚醛淸漆型環氧 樹脂、多元醇之聚縮水甘油基酯、多鹼基酸之聚縮水甘油 基酯、脂環式環氧樹脂、脲基醋酸系環氧樹脂等。 經濟部智慈財產局a(工消費合作社印製 於第1圖，如其一實施形態所示般，本發明之黏著薄 膜3係於支持薄膜1之兩面上具有黏著劑層2，2之三層 構造。其總厚度（黏著薄膜3整體之厚度）由與導線架或 半導體元件間的黏著性之觀點爲4 3 // m以上，由溫度循 環性之觀點爲5 7 // m以下，較宜爲4 5〜5 5 // m，更 宜爲4 7〜5 3 // m。黏著劑層之厚度由黏著性，生產性 之觀點宜爲1 // m以上，由溫度循環性之觀點宜爲3 0 //m以下，更宜爲1 〇〜1 5//m。 至於支持薄膜，較宜使用聚醯亞胺、聚醯胺、聚硕、 聚伸苯基硫醚、聚醚醚酮、聚芳香酯、聚碳酸酯等的絕緣 性耐熱性樹脂薄膜。支持薄膜之厚度雖未予特別限定者， 通常宜爲5〜5 0//m，更宜爲2 0〜3 0 //m。支持薄 氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 591724 A7 B7 五、發明説明（15) 膜之T g，宜爲使用較本發明所用的黏著劑之T g高者， 宜爲2 0 0 °c以上，更宜爲2 5 0 °C以上，支持薄膜之吸 水率宜爲3重量％以下，較宜爲2重量％以下。 於較佳的實施形態所用的支持薄膜，係具有T g 2 5 0 °C以上，吸水率2重量％以下，熱膨脹係數3 X 1〇—5 / °C以下的物性之絕緣性耐熱性樹脂薄膜，由以 上的點觀之尤宜爲聚醯亞胺薄膜。 支持薄膜係以處理表面並供使用爲佳。此爲提高支持 薄膜與黏著劑層間之黏著強度，防止支持薄膜及黏著劑層 間之剝離所致。至於支持薄膜之表面處理方法，亦可使用 鹼處理、矽烷偶合劑處理等的化學處理、噴砂粗糙化處理 等的物理處理、電漿處理、電暈處理等任一種處理。因應 黏著劑之種類若使用最適當的處理時即可，惟於本發明， 以化學處理或電漿處理尤宜。 至於支持薄膜上形成黏著劑層之方法，雖未予特別限 制，惟將黏著劑溶解於有機溶劑使成黏著劑淸漆，藉由將 此塗布於支持薄膜之兩面上，宜爲可進行。在此所用的有 機溶劑。若爲可均勻的溶解或混練上述黏著劑成分時，則 未予特別限制，惟例如可舉出二曱基亞碾、二乙二醇二甲 基醚、甲苯、苯、二甲苯、甲乙酮、四氫呋喃、二η等院等 。此等係可混合多種使用。塗布方法雖未予特別限制，惟 例如可舉出輥輪塗布，反復輥輪塗布，照相凹版塗布，常 用塗布等。又於黏著劑淸漆中通過支持薄膜予以塗布亦可 ，惟有厚度之控制成爲困難的情形。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公H ' $ -18- (請先閱讀背面之注意事項再填寫本頁) 、1Τ 經濟部智慧財產局員工消費合作社印製 591724 Α7 Β7 五、發明説明（16) (請先閲讀背面之注意事項再填寫本頁} 將黏著劑塗布於支持薄膜後，加熱處理需進行溶劑之 去除及醯亞胺化，可製造三層構造之黏著薄膜。加熱處理 時之處理溫度，若爲可去除溶劑之溫度時即可。塗布及乾 燥係各對單面進行亦可，同時進行兩面亦可。 經濟部智慧財產局員工消費合作社印製 其次，與本發明有關的附有半導體用黏著薄膜之導線 架，係含有導線架及經予黏著至此導線架之與上述本發明 有關的黏著薄膜者，藉由採用本發明之黏著薄膜，與半導 體元件間之低溫黏著係可能的，可作業性，良品率良好且 簡單的製造出可靠性優越的附有薄膜之導線架。本發明之 黏著薄膜，因可在低溫之黏著，尤其於附有已採用較易經 予氧化的銅製導線架之黏著薄膜的導線架之製造上係有用 的。附有黏著劑之導線架，例如將本發明之黏著薄膜裁切 成指定的大小，藉由黏著所得的薄膜片於導線架之方法可 予製造。黏著薄膜之裁切方法，若爲可正確的裁切薄膜之 方法時則任一種方法均可，惟若考慮作業性時，則採用沖 壓模具並裁切黏著薄膜，保持原狀黏著已予沖壓的薄膜片 於導線架之指定位置上爲宜。此時之黏著溫度通常由黏著 強度之觀點，宜爲1 5 0 °C以上，由黏著劑層之熱劣化或 導線架之氧化的觀點宜爲3 0 0 °C以下，較宜爲2 0 0〜 250 °C。黏著壓力通常宜爲〇 · 1〜20MPa ，較宜 爲0 . 3〜lOMPa。黏著壓力未滿〇 . IMPa時， 有未能得足夠的黏著強度之情形，若超過2 0 Μ P a時， 則黏著劑越過指定的位置並滲出，有尺度精確度變成惡劣 的情形。加壓時間若爲前述黏著強度，黏著壓力若爲可黏 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ297公釐） -19- 591724 A7 _B7 五、發明説明（17) 著的時間即可’惟若考慮作業性時，宜爲〇 . 3〜6 〇秒 ，更宜爲0 · 5〜1 0秒。 (請先閲讀背面之注意事項再填寫本頁) 與本發明有關的半導體裝置，係含有導線架及半導體 兀件’導線架及半導體兀件係介由與上述本發明有關的黏 著薄膜並相互經予黏著著。藉由採用本發明之黏著薄膜， 可作業性，良品率良好且簡單的製造可靠性優越的半導體 裝置。 例如，採用上述予以製造的附有黏著薄膜之導線架， 可如下述般製造第2圖所不的半導體裝置。首先，黏著薄 膜3經予黏貼的導線架5 (附有黏著薄膜3之導線架5 ) 之導線架5未予黏者的另一•卓面之黏著劑層上黏著半導體 元件4後，視必要進行黏著薄膜3之硬化處理。其次採用 由金線等而成的銲接連線7，接合導線架5及半導體元件 4。最後，藉由次環氧樹脂等的封裝材6轉移成形並予封 裝，可製造L〇C構造之半導體封裝體。雖未予圖予，惟 作成採用具有彎柄之導線架亦可。 經濟部智慈財產局員工消費合作社印製 至於半導體晶片4之黏著強度，由黏著強度之觀點宜 爲1 5 0 °C以上，由黏著劑層之熱劣化及導線架之氧化的 觀點宜爲3 0 0 °C以下，較宜爲2 0 0〜2 5 0 °C。黏著 壓力通常宜爲0 · 1〜20MPa ，較宜爲〇 · 3〜10 Μ P a。黏著壓力未滿〇 . 1 Μ P a時，有未能獲得足夠 的黏著壓力的情形，若超過2 0 Μ P a時，黏著劑超過指 定的位置並滲出，有尺度精確度變差的情形，又亦有半導 體晶片生成破壞的疑慮之情形。加壓時間若爲可在前述黏 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 591724 —·~~·—-- 五、發明説明（18) 惟若考慮作業性 〜1 0秒0 著溫度，黏著壓力可黏著的時間時即可 時，宜爲0 · 3〜60秒，更宜爲〇 〔實施例〕 以下利用實施例說明本發明，惟本發明並非受此等任 何限制者。 經濟部智慧財產局員工消費合作社印製 烷 2 0 5 · 0 —甲基一2 — 黏著劑淸漆A 、氮氣 入2 ，
導入管及分餾塔之5 L 一雙〔4 一（ 4 一胺
.5莫耳 酮（以下 在此溫度 莫耳）呈 添加三乙 時後，使 將所得的 合物後， 聚合物。 胺A之粉 於Ν Μ P 1 ·黏 (1 於 四頸燒 基苯氧 解於1 Ν Μ P 單氯化 超過-使溫度 18 0 投入甲 二甲基 減壓乾 所得的 g內， 著劑淸 )聚醯 附有溫 瓶內， 基）苯 2 0 0 j ) ° 偏苯三 5 °C。 不超過 °C反應 醇中， 甲醯胺 燥而得 聚醯胺 而得黏 漆之製 胺醯亞 度計、 在氮氣 基〕丙 g N 將此溶 甲酸1 俟溶解 5 °C。 9小時 使聚合 ，投入 亞胺經 醯亞胺 著劑淸 造 胺A之 攪拌機 下，加 液冷卻 0 5 . 單氯化 在室溫 ，使醯 物單離 甲醇中 予精製 A之粉 漆A 〇 至-1 3 g ( 偏苯二 繼續攪 亞胺化 出。乾 並再度 的聚醯 末6〇 g ( 0 吡咯烷 0 〇c， 0 . 5 甲後， 拌1小 結束。 燥此聚 單離出 胺醯亞 g溶解 )，溶 稱「 下添加 溫度不 基胺至 在 反應液 溶解於 其後， 末。將 2 0 0 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨〇、〆297公釐） -21 - 591724 A7 B7 五、發明説明（19) (請先閲讀背面之注意事項再填寫本頁) (2 )聚醯胺醯亞胺B之黏著劑淸漆B 於附有溫度計、攪拌機、氮氣導入管及分餾塔之5 L 四頸燒瓶內，在氮氣下，加入2，2 —雙〔4 — ( 4 一胺 基苯氧基）苯基〕丙烷143 · 5g (0 . 35莫耳）， 1 ，3 -雙（胺基丙基）四甲基二矽氧烷37 _ 2g ( 〇.15莫耳），溶解於1200g N —甲基一2 —吡 咯烷酮。採用此溶液，使與上述（1 )之聚醯胺醯亞胺A 之製造同樣的反應’而得聚醯胺醯亞胺B之粉末，溶解此 粉末60S於NMP20〇g內，而得黏著劑淸漆B。 經濟部智慧財產局員工消費合作社印製 (3 )聚醯胺醯亞胺C之黏著劑淸漆c 於附有溫度計、攪拌機、氮氣導入管及分餾塔之5 L 四頸燒瓶內，在氮氣下，加入2，2 -雙〔4 一（ 4 一胺 基苯氧基）苯基〕丙烷123，0g (〇 · 3莫耳），1 ，3 -雙（胺基丙基）四甲基二矽氧烷49 . 6g ( 〇·2莫耳），溶解於1200g N —甲基一 2-吡咯 烷酮。採用此溶液，使與上述（1 )之聚醯胺醯亞胺A之 製造同樣的反應，而得聚醯胺醯亞胺C之粉末，溶解此粉 末6〇g於NMP200g內而得黏著劑淸漆c。 (4 )聚醯胺醯亞胺D之黏著劑淸漆D 於附有溫度計，攪拌機、氮氣導入管及分餾塔之5 L 四頸燒瓶內，在氮氣下，加入2，2 -雙〔4 — ( 4 一胺 基苯氧基）苯基〕丙烷61 · 5g (〇 . 15莫耳），1 本紙張尺度適用中國國家標準（CNS) A4規格（210x297公釐） Γ. -22 - 591724 A7 B7 五、發明説明（20) (請先閲讀背面之注意事項再填寫本頁) ’ 3 -雙（胺基丙基）四甲基二矽氧烷86 _ 8g ( 〇·35莫耳），溶解於12〇0g N —曱基一吡咯院 酮。採用此溶液，使與上述（1 )之聚醯胺醯亞胺A之製 造同樣的反應，而得聚醯胺醯亞胺D之粉末，溶解此粉末 6 0 g於NMP 2 0 0 g內，而得黏著劑淸漆D。
(5 )黏著劑淸漆E 於上述聚醯胺醯亞胺A之黏著劑淸漆A 8 5重量分內 添加矽氧橡膠塡充劑（東麗Dorr Lorning公司）製造的 TorayfilE-601) 1 5重量分，製作黏著劑淸漆E。
(6 )黏著劑淸漆F 於上述聚醯胺醯亞胺B之黏著劑淸漆B 8 5重量分內 添加二氧化矽塡充劑（龍森公司）製造的Adomafine So_ 25R)2 0重量分，製作黏著劑淸漆F。 經濟部智慧財產局8工消費合作社印製 將上述而得的黏著劑淸漆A〜F之各自流展於玻璃板 上成9 0//m之厚度，在1 〇〇°c乾燥1 〇分鐘後，由玻 璃板剝離，固定於鐵框上，在2 0 0 °C乾燥1 〇分鐘，在 3 0 0 °C乾燥1 〇分鐘，而得厚度2 5 // m之黏著劑薄膜 (黏著劑層）。將所得的各薄膜之T g，線膨脹係數貯藏 彈性係數各以下法測定。所得的結果示於表1。 〔T g〕 採用Seiko電子工業（股）製造的τ M A 1 2 0，藉 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） ~ -23- 591724 A7 B7 五、發明説明（21) 由穿透法，以升溫速度1 0 °C /分、抗拉荷重1 0 g之條 件下予以測定。 (請先閲讀背面之注意事項再填寫本頁) 〔線膨脹係數〕 採用Seiko電子工業（股）製造的T M A 1 2 0，以 升溫度速度1 0 °C /分，抗拉荷重1 0 g，溫度範圍8 0 〜1 2 0 t之條件予以測定。 〔貯藏彈性係數〕 採用（股）Rheology製造的D V E流變光譜（ Rheospectra)，頻率 1 〇 Η z ，振幅 1 〇 /zm，抗拉荷 重係以自動控制之條件予以測定。 表 1 黏著劑淸漆 T g (°C ) 線膨脹係數 (ppm) 貯藏彈性係數 (G P a ) A 2 3 0 5 5 3 . 5 B 1 8〇 6 5 2 . 3 C 1 6〇 6 8 2 . 0 D 1 0〇 8 0 1 . 5 E 2 3 0 6 0 2 . 8 F 18 0 6 0 3 . 3 經濟部智慧財產局員工消費合作社印製 2 .黏著薄膜之製造 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24- 591724 A7 B7 五、發明説明（22) 採用由上述製造的黏著劑淸漆A〜F，如下述方式製 造黏著薄膜。 〔實施例1〕 採用由偶合劑而得的化學處理並施以表面處理之厚度 2 5 // m之聚醯亞胺薄膜（宇部興產（股）製造，商品名 :Upilex SGA，吸水率1 · 3 %，線膨脹係數1 X 1〇—5 / °C )作爲支持薄膜，塗布聚醯胺醯亞胺B之黏 著劑淸漆B於此支持薄膜上，而得兩面具有厚度1 2 . 5 # m之黏著劑層之第1圖構成的黏著薄膜。 〔實施例2〕 除採用由電漿處理並施以表面處理之厚度2 5 // m之 聚醯亞胺薄膜（宇部興產（股）製造，商品名：Upilex SP A )作爲支持薄膜外，餘以與實施例χ同法操作，製作 黏著薄膜。 〔實施例3〕 除使用聚醯胺醯亞胺C之黏著劑C外，餘以與實施例 1同法，製作黏著薄膜。 〔實施例4〕 除使用聚醯胺醯亞胺C之黏著劑淸漆C外，餘以與實 施例2同法，製作黏著薄膜。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --m I - - m — · I - ....../ I...... I (請先閱讀背面之注意事項再填寫本頁)
、1T 經濟部智慧財產局員工消費合作社印製 1Γ · -25- 591724 A7 _B7______ 五、發明説明（23) 〔比較例1〕 (請先閲讀背面之注意事項再填寫本頁) 除採用聚醯胺醯亞胺B之黏著劑淸漆B予以塗布使形 成乾燥後之厚度爲2 0 // m之黏著劑層外，餘以與實施例 2同法操作，而得兩面具有厚度2 0 //m之黏著劑層的黏 著薄膜。 〔比較例2〕 除採用聚醯胺醯亞胺之黏著劑淸漆B予以塗布使形成 乾燥後之厚度爲5 // m之黏著劑層外，餘以與實施例2同 法操作，而得兩面具有厚度5 // m之黏著劑層的黏著薄膜 〇 〔比較例3〕 除使用聚醯胺聚醯亞胺A之黏著劑淸漆A外，餘以與 實施例2同法操作，製作黏著薄膜。 經濟部智慧財產局Μ工消費合作社印製 〔比較例4〕 除使用聚醯胺聚醯亞胺D之黏著劑淸漆D外，餘以與 實施例2同法操作，製作黏著薄膜。 〔比較例5〕 除使用黏著劑淸漆E外，餘以與實施例2同法，製作 黏著薄膜。 本紙張尺度適用中國國家標準（CNS ) A4規格(_ 2ΐ〇χ297公麓)----一— -26- 591724 A7 B7 五、發明説明（24) 〔比較例6〕 (請先閱讀背面之注意事項再填寫本頁) 除使用黏著劑F外，餘以與實施例2同法，製作黏著 薄膜。 將各實施例、比較例之黏著薄膜之全部厚度及黏著齊ij 之滲出長度，及低溫黏著性及溫度循環性之評估結果彙整 表示於表2。各特性之測定方法及評估方法係如下所示。 〔黏著劑之滲出長度〕 對實施例1〜4及比較例3〜6之各黏著薄膜，裁切 各薄膜成面積1 9 X 5 0 m m作爲測定薄膜，將此在 3 5 0 °C，3MP a，1分鐘之條件下加熱壓著在長邊方 向之中央部測定由試樣之長邊朝垂直方向滲出的黏著劑之 長度，作爲滲出長度。 〔低溫黏著性〕 經濟部智慧財產局員工消費合作社印製 採用冲孔模具冲壓所得的黏著薄膜成短長片狀，於厚 度0.15mm之銅合金製導線架之上置放至使0·2 m m間隔，〇 . 2 m m寬度之內部導線架頂住般，在 2 8 0。(：，3 Μ P a加壓3秒鐘予以壓著，製作出附有黏 著薄膜之導線架。由2 m之高度使附有黏著薄膜之導線架 由2 m之高度落下至地面時的黏著薄膜片之有無脫落’評 估低溫黏著性，以無脫落者爲良好有脫落者爲不良° 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -27- 591724 A7 B7 五、發明説明（25) 〔溫度循環性〕 採用以與上述低溫黏著性評估製作者相同的附有黏著 薄膜之導線架，於其黏著劑層面上在2 8 0 °C，3 Μ P a 加壓半導體元件予以壓著。其後，以金屬線連線銲接導線 架及半導體元件，以聯苯基系環氧樹脂成形材料（日立化 成工業（股）製造的商品名：（EL - 9200)藉由轉 移成形予以封裝，使在1 7 5 °C硬化6小時，製作第2圖 所示的半導體裝置。 以在一 6 5 t：置放3 0分鐘後在1 7 5 t：置放3 0分 鐘的步驟爲一循環，對所得的半導體裝置進行1 0 0 0循 環處理後，觀察正接合半導體元件及導線架的金線是否斷 線。以無斷線者爲良好之，以有斷線者爲不良。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1紙張尺^^國國家標準（(：奶）八4規格（21〇><297公釐) -28- 591724 A7 B7 五、發明説明（26> 表 2 淸漆種類 薄膜厚度 滲出長度 低溫黏著 溫度循環 (//111 ) (mm) 性 性 實施例 1 B 50 0.2 良好 良好 實施例 2 B 50 0.2 良好 良好 實施例 3 C 50 0.4 良好 良好 實施例 4 C 50 0.4 良好 良好 比較例 1 B 65 良好 不良 比較例 2 B 3 5 不良 不良 比較例 3 A 50 0.1 不良 不良 比較例 4 D 50 2.5 良好 不良 比較例 5 E 50 0.1 不良 良好 比較例 6 F 50 0.2 良好 不良 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 表1及表2所示般，實施例1〜4之黏著薄膜係不論 何者均滿足本發明規定的各種特性者，此等係在低溫黏著 性，溫度循環性均良好。對此，比較例1之黏著薄膜係其 總厚度亦較本發明規定的値厚，溫度循環性低劣，比較例 2之黏著薄膜，係其總厚度亦較本發明規定的値薄，低溫 黏著性及溫度循環性低劣。在比較例3之黏著薄膜，係黏 著劑之T g亦較本發明規定的値高，且貯藏彈性係數亦較 本發明規定的値高，故低溫黏著性方面低劣，同時溫度循 環性低劣。在比較例4之黏著薄膜，係黏著劑之線膨脹係 數亦較本發明規定的値高，溫度循環性低劣。在比較例5 週 厌 人 个 準 標 豕 囤 國 -29- 591724 A7 _Β7 五、發明説明（27) 之黏著薄膜係黏著劑之T g亦較本發明規定的値高，低溫 黏著性低劣。在比較例6之黏著薄膜係黏著劑之貯藏彈性 係數亦較本發明規定的値高，溫度循環性低劣。 本發明之半導體用黏著薄膜係可低溫黏著，尤其於採 用銅製導線架的附黏著薄膜之導線架的製造係有用的。又 採用附黏著薄膜之導線架予以製造的半導體裝置，係溫度 循環性優越，具有較高的可靠性。 本發明係揭露與日本專利申請2 0 0 1 -238218號（2001年8月6曰申請）及日本專利 申請2002 — 196226號（2002年7月4日申 請）有關，在此附上說明書供參考。 應予注意，除上述已說明外，可在不偏離本發明之新 穎及顯著的技術特徵下進行上述實施例之各種修飾及變化 。因此所有該種修飾及變化均可視作在所附申請專利範圍 之範疇內。 广請先聞讀背韵！法意事項存填寫本頁) 經濟部智慧財產局R工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -30-

Claims (1)

  1. 591724 A8 B8 C8 __ D8 々、申請專利範圍 第91116913號專利申請案 中文申請專利範圍修正本 民國92年11月24日修正 1 · 一種半導體用黏著薄膜，係由支持薄膜及經予形 成於前述支持薄膜之兩面上的黏著劑層而成之半導體用黏 著薄膜，前述黏著層係由玻璃轉移溫度2 0 〇 °C以下，線膨 脹係數70ppm以下，貯藏彈性係數3GPa以下的黏著劑而 成，且黏著薄膜整體之厚度爲43〜57//m。 2 ·如申請專利範圍第1項之半導體用黏著薄膜，其 中前述黏著劑之滲出長度爲2mm以下（在此前述滲出長 度係於厚度25 // m之支持薄膜的兩面上在3 50 °C，3MPa ，1分鐘之條件下熱壓著19x 50mm之黏著薄膜試樣之際 ’在長邊方向之中央部分測定經予形成厚度丨2 . 5 // m黏· 著劑層而成的整體之厚度50// m，面積19x 50mm之黏著 薄膜試樣而得的値。 3 ·如申請專利範圍第1項之半導體用黏著薄膜，其 中前述玻璃移轉溫度爲120°C以上。 4 .如申請專利範圍第1項之半導體用黏著薄膜，其 中前述線膨脹係數係30ppm以上。 5 ·如申請專利範圍第1項之半導體用黏著薄膜，其 中前述貯藏彈性係數係1 GPa以上。 6 .如申請專利範圍第1項之半導體用黏著薄膜，其 中前述黏著劑層之厚度係1〜3 0 // m。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚） (請先閲讀背面之注意事項再填寫本頁) •B裝· 訂 經濟部智慧財產局員工消費合作社印製 591724 A8 B8 C8 _ D8 .———------— _ 六、申請專利範圍 7 ·如申請專利範圍第丨項之半導體用黏著薄膜，其 中前述支持薄膜之厚度係5〜50// m。 8 . —種附有半導體用黏著薄膜之導線架，係含有導 線架及經予黏著至前述導線架之申請專利範圍第1至7項 中任一項之半導體用黏著薄膜。 9 · 一種半導體裝置，係含有導線架及半導體元件之 半導體裝置’前述導線架及前述半導體元件介由申請專利 範圍第1至7項中任一項之半導體用黏著薄膜相互予以黏 著。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -2-
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US6744133B2 (en) 2004-06-01
CN1401720A (zh) 2003-03-12
JP3719234B2 (ja) 2005-11-24
KR20030014108A (ko) 2003-02-15
US20030102573A1 (en) 2003-06-05
KR100481347B1 (ko) 2005-04-08
CN1249809C (zh) 2006-04-05

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