TW583735B - Semiconductor device and manufacturing method for the same - Google Patents

Semiconductor device and manufacturing method for the same Download PDF

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Publication number
TW583735B
TW583735B TW091135781A TW91135781A TW583735B TW 583735 B TW583735 B TW 583735B TW 091135781 A TW091135781 A TW 091135781A TW 91135781 A TW91135781 A TW 91135781A TW 583735 B TW583735 B TW 583735B
Authority
TW
Taiwan
Prior art keywords
insulating film
main surface
gate
film
separation
Prior art date
Application number
TW091135781A
Other languages
English (en)
Chinese (zh)
Other versions
TW200402107A (en
Inventor
Shu Shimizu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200402107A publication Critical patent/TW200402107A/zh
Application granted granted Critical
Publication of TW583735B publication Critical patent/TW583735B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW091135781A 2002-07-16 2002-12-11 Semiconductor device and manufacturing method for the same TW583735B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002206881A JP2004055588A (ja) 2002-07-16 2002-07-16 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200402107A TW200402107A (en) 2004-02-01
TW583735B true TW583735B (en) 2004-04-11

Family

ID=30437469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091135781A TW583735B (en) 2002-07-16 2002-12-11 Semiconductor device and manufacturing method for the same

Country Status (4)

Country Link
US (1) US20040012069A1 (https=)
JP (1) JP2004055588A (https=)
KR (1) KR100521511B1 (https=)
TW (1) TW583735B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100700279B1 (ko) * 2005-12-28 2007-03-26 동부일렉트로닉스 주식회사 플랫 노아 마스크롬의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150072A (en) * 1997-08-22 2000-11-21 Siemens Microelectronics, Inc. Method of manufacturing a shallow trench isolation structure for a semiconductor device
US6130467A (en) * 1997-12-18 2000-10-10 Advanced Micro Devices, Inc. Shallow trench isolation with spacers for improved gate oxide quality
US6051478A (en) * 1997-12-18 2000-04-18 Advanced Micro Devices, Inc. Method of enhancing trench edge oxide quality
US6146975A (en) * 1998-07-10 2000-11-14 Lucent Technologies Inc. Shallow trench isolation
EP1005079B1 (en) * 1998-11-26 2012-12-26 STMicroelectronics Srl Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
US6388303B1 (en) * 1999-04-21 2002-05-14 Sanyo Electric Co., Ltd. Semiconductor device and semiconductor device manufacture method
US6498106B1 (en) * 2001-04-30 2002-12-24 Taiwan Semiconductor Manufacturing Company Prevention of defects formed in photoresist during wet etching
US6900085B2 (en) * 2001-06-26 2005-05-31 Advanced Micro Devices, Inc. ESD implant following spacer deposition

Also Published As

Publication number Publication date
KR100521511B1 (ko) 2005-10-12
KR20040007235A (ko) 2004-01-24
US20040012069A1 (en) 2004-01-22
JP2004055588A (ja) 2004-02-19
TW200402107A (en) 2004-02-01

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