TW578315B - Luminescence-diode - Google Patents
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- TW578315B TW578315B TW91100289A TW91100289A TW578315B TW 578315 B TW578315 B TW 578315B TW 91100289 A TW91100289 A TW 91100289A TW 91100289 A TW91100289 A TW 91100289A TW 578315 B TW578315 B TW 578315B
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 210000004508 polar body Anatomy 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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Description
578315 五、發明說明(1 ) 本發明涉及一種發光二極體,其半導體晶片具有一形 成在基板上之可發出光子之活性層以及一配置於活性層 之後之接觸層,此接觸層對至少一部份光子而言是可透 過的。本發明亦涉及此種發光二極體之製造方法。 此種發光二極體在US 543 2808A中已爲人所知,其半 導體晶片使用一種由SiC所構成之摻雜之導電基板。在 基板上施加一種層,其成份是GaxAlylnuyN,其 且09^1。半導體晶片施加在承載體上且經由連結線而 與外部之連接線相連。此外,半導體晶片埋入一由人造 樹脂所構成之保護封罩中,此種封罩同時用作透鏡。習 知之發光二極體之缺點是:對光子能量較大之光束而言 此種保護封罩缺乏持久性。此乃因以GaAlInN爲主之半 導體晶片所發出之光是在UV區域至短波之綠色波長區 域中。在習知之發光二極體中排熱問題在功率應用時亦 不能充份地解決,因爲人造樹脂通常是一種不良之導熱 體。 由先前技藝開始,本發明之目的是提供一種可在紫外 線(UV)區域中發射光束之發光二極體,其適合用在功率 應用之領域中。本發明亦提供其製造方法。 此目的藉由申請專利範圍第1項之發光二極體及第22 項之方法來達成。有利之其它形式及實施例具有申請專 利範圍各附屬項之其它特徵。 依據本發明,在半導體晶片之可透光之接觸層上配置 一種由耐紫外光及耐一般光束之固體材料所構成之透鏡
578315 五、發明說明(2) 體,其對所發出之光子是可透過的且可熱損耗由活性層 中排出。 在本發明之發光二極體中,透明之透鏡體較佳是由耐 光之無機固體材料所製成。此種固體材料例如可爲SiC ,Al2〇3,玻璃以及石榴石(Granate)結晶,其材料特性 不會因受到紫外光之照射而改變。此外,這些材料相較 於人造樹脂而言具有良好之導熱性,因此適合在高的電 功率及高的光功率時在功率操作時使半導體晶片冷卻。 在本發明之方法中,藉由雷射焊劑使半導體晶片經由 透鏡體(特別是經由透鏡體上所配置之導電軌)而與透鏡 體相連。 較佳是進行以下各步驟: (a) 在晶圓複合物中製成許多透鏡體; (b) 在晶圓複合物之此側(其上稍後將安裝半導體晶片) 上施加多條導電軌以用於多個半導體晶片中; (c) 藉由雷射焊接經由晶圓複合物使多個半導體晶片固 定至導電軌; (d) 使晶圓複合物劃分成較小之透鏡體單元或劃分成各 別具有半導體晶片之透鏡體。 此外,在步驟(c)和(d)之間較佳是施加多條導電軌使 半導體晶片之背面接觸區在電性上連接至晶圓複合物。 本發明之其它優點及有利之形式將依據圖式中之實施 例來描述。圖式簡單說明: 第1圖 發光二極體之橫切面。 -4- 578315 五、發明說明(3 ) 弟2圖 係弟1圖之發光—*極體之另一^種實施形式之 橫切面。 第3圖 係第2圖之發光二極體之由下方所看到之圖 解。 第4圖 發光二極體之另一實施例之橫切面。 第5圖 係第4圖之發光二極體之由下方所看到之圖 解。 第6圖 設有外殼(其具有螺紋)之發光二極體之橫切 面。 各實施例中相同之組件在這些圖式中分別設有相同之 參考符號。 第1圖之發光二極體使用半導體晶片2及其上所配置 之透1¾體3。半導體晶片2具有基板4,基板4上形成 活性層5(其包含pn-接面6,單一量子井結構或多重 (multi)量子井結構。活性層5例如以GaxAlyltM-x-yN製 成,其中OSxSl,且x + yy。在基板4之背面上 形成η側之接觸層7,其以可反射之方式構成。在半導 體晶片2之則側上配置一種對這些由活性層5所發生之 光子而言是可透過之Ρ側之接觸層8,其上設置透鏡體 3或具有至此透鏡體之實際接觸區。ρ側之接觸層8例 如由6nm厚之鉑層,島形或網形之金屬結構,銦-錫-氧 化物(ITO)或ZnO所構成。 透鏡體3(此處是一種平凸透鏡)之平坦之側面上配置 著半導體晶片2,使由半導體晶片所發出之光子可耦合 578315 五、發明說明(4) 至透鏡體3中,透鏡體3由耐光之無機固體材料所製成 ,此種固體材料可使熱損耗由活性層5中導出。 所謂耐光是:固體材料在超過此發光二極體1之整個 壽命中其吸收係數之變化不會超過10%。此種材料例如 可爲sic,ai2o3,玻璃以及石榴石結晶。 由活性層5所發出之光子(其經由第1圖之晶片及透鏡 體之路徑是以光束9及10(折射效應在此圖中已忽略)來 說明)可跨過P側之接觸層8及透鏡體3且在發光面1 1 上離開此透鏡體3。由於透鏡體3之光學特性在發光二 極體1之壽命期間只稍微改變而已,則在超過此發光二 極體1之壽命期間可確保一種良好之耦合射出效率。 在透鏡體3之面向半導體晶片2之平坦之側面上形成 和導電軌1 2。此外,在透鏡體3之下側上配置一種冷卻 體13,其使由晶片2發送至透鏡體3之熱量又可由透鏡 體3排出。 第2圖中所示之另一發光二極體1中,透鏡體3在平 坦側上具有一個凹口 1 4,凹口 1 4中施加一種半導體晶 片2,使活性層6之大部份位於凹口 1 4中。特別是須形 成凹口 1 4,使pn接面6位凹口內部,則在側面上由半 導體晶片2所發出之光1 7b可由透鏡體3所接收。 此外,亦可在透鏡體3之發光面1 1上配置一種抗反 射層1 5,其使發光面1 1上之折射率之跳動値變小,因 此使光更容易由透鏡體3耦合而出。抗反射層15亦可 含有一種或多種光學活性轉換材料,其使一種指定波長
578315 五、發明說明(5) 之光轉換成波長較大之光。這些轉換材料亦可埋置於透 鏡體3本身中。 此外,如第3圖所示,在第2圖之實施例之發光二極 體1中,在下側上設置反射層1 6,反射層1 6在透鏡體 3之未由導電軌12所覆蓋之下側上延伸。另一種方式是 亦可使反射層1 6以整面方式施加在透鏡體之平坦側之 位於凹口 1 4外部之面上。在此種情況下在導電軌1 2及 透鏡體3之間存一種反射層,這樣可使導電軌1 2上之 吸收性大大地下降。 藉由反射層16,則這些光束(其不像第2圖中所示之 光束1 7a,b —樣在第一次即入射至透鏡體3之凸出側 上(即,由發光面11耦合而出),而是反射至此發光面 Π)由反射層16回射至透鏡體3中,使這些光束可在第 二次入射至發光面Π時由透鏡體3中耦合而出。 第4圖是另一種實施例,其中許多半導體晶片2固定 在透鏡體3之下側上。這些光束(其由內部之半導體晶片 2a中發出,如第4圖中所示之光束18)耦合而出之機率 較這些由外部半導體晶片2b所發出之光束19者還大, 這是因爲光束19以較不利之角度入射至發光面11。但 此種缺點之至少一部份例如可藉由透鏡體3之平坦側上 之反射層16(這些光束19又朝向凸出之透鏡面反射至反 射層1 6)而減少。 第5圖是由下方所看到之第4圖之發光二極體1之俯 視圖,其中可看出一系列經由導電軌1 2而達成接觸之
578315 五、發明說明(6) 半導體晶片2。但亦可以網狀形式來形成該導電軌1 2, 以便藉由並聯來確保半導體晶片上之均勻之操作電壓。 第1至5圖所示之發光二極體1在第6圖中亦可像第 4圖之實施例一樣設有一種外殼20,其可藉由螺紋2 1 而栓入傳統之燈框中。 但就此種外殼20而言亦可選取其它適當之連接技術 ,例如,半導體技術中廣泛使用之表面安裝技術。 在第6圖所示之實施例中,外殻20經由導電軌12而 與半導體晶片2之p側之接觸層8相連。N側之接觸層 經由各別之導線22而與終端接觸區23 (其與外殼20相 隔開)相連接。 在第6圖所示之發光二極體1中,熱可經由透鏡體3 而發送至周圍之介質(通常是空氣),亦可經由外殼20而 發送至周圍之介質,在外殼20上可另外設置冷卻體24 ,其是額外之散熱體且與終端接觸區1 2及7相連。 第6圖所示之發光二極體特別適用於取代傳統之白熾 燈,在相同之光效率時發光二極體1之體積較傳統白熾 燈之體積小很多。 在各別實施例中具體描述之其它有利之技術元件當然 亦可儘可能以其它之實施例來製成。因此’在第1圖之 實施例中’亦可使用第2 ’ 3圖之實施例中所不之反射 層1 6 〇 本發明中各實施例之描述當然不是對本發明之限制。 反之,發光二極體之每一種構造形式都可在本發明之範
578315 五、發明說明(7) 圍中,其使用一種特別是由無機材料所製成之透鏡體, 其特別適合用來使熱由半導體本體中排出。 在製成本發明之發光二極體之較佳之方法中,半導體 晶片2藉由雷射焊接經由透鏡體3而與導電軌1 2相連 。較佳是首先在晶圓複合物中製成許多透鏡體3。在使 晶圓複合物切割成較小之透鏡體單元或各別之透鏡體3 之前,在晶圓複合物之遠離透鏡體3之光射出側之此側 上藉由雷射焊接使半導體晶片2固定在晶圓複合物上, 此時其接觸層8經由晶圓複合物而與導電軌1 2(例如, 金屬層)以雷射方式相焊接。較佳是在切割晶圓複合物之 前施加導電軌22使半導體晶片2之背面之接觸區7連 接至透鏡體-晶圓複合物。 符號之說明 1 發光二極體 2a,2b 半導體晶片 3 透鏡體 4 基板 5 活性層 6 pn接面 7 η側之接觸層 8 ρ側之接觸層 9 光束 10 光束 11 發光面 578315 發明說明< :8) 12 導電軌 13 冷卻體 14 凹口 15 抗反射層 16 反射層 1 7a,b 光束 18 光束 19 光束 20 外殻 2 1 螺紋 22 導線 23 終端接觸區 24 冷卻體 ίο-
Claims (1)
- H 2 6 . / : 也 Γ: i / t» . ‘一 V-. : 六、申請專利範圍 第9 1 1 00289號「發光二極體及其製造方法」專利案 (92年9月修正) 六申請專利範圍: 1. 一種發光二極體,其半導體晶片(2 )包含:一形成在 基板(4)上之可發出光子之活性層(5); —由基板(4) 觀看時配置於活性層(5 )之後之接觸層(8 ),其特徵 爲:在接觸層(8 )上配置一種使熱損耗由活性層(5 ) 中導出所用之透鏡體(3 ),其由耐輻射之固體材料所 構成且可透過各所發出之光子。 2. 如申請專利範圍第1項之發光二極體,其中透鏡體 (3 )設有一與接觸層(8 )相接觸所用之導電軌(1 2 )。 3. 如申請專利範圍第1或2項之發光二極體,其中透 鏡體(3 )具有球形區段之形式。 4. 如申請專利範圍第1項之發光二極體,其中透鏡體 (3)在發光面(11)上具有抗反射層(15)。 5. 如申請專利範圍第1或4項之發光二極體,其中此 層(15)在透鏡體(3)之發光面(11)上含有光學轉換材 料。 6·如申請專利範圍第1項之發光二極體,其中半導體 晶片(2)安裝在透鏡體(3)之凹口(14)中。 7.如申請專利範圍第6項之發光二極體,其中此活性 層(5 )之在側面方向中發光之區域(6 )位於凹口( 1 4 ) 之內部中,使由活性層(5 )之側面發光區域(6 )所發 578315 六、申請專利範圍 出之光子(17b)耦合至透鏡體(3)中。 8. 如申請專利範圍第1或6項之發光二極體,其中透 鏡體(3 )之面向半導體晶片(2 )之背面之至少一部份 是可反射的。 9. 如申請專利範圍第1項之發光二極體,其中透鏡體 (3 )由SiC,Al2〇3或石榴石結晶所製成。 10. 如申請專利範圍第1項之發光二極體,其中在透鏡 體(3)上安裝著冷卻體(13, 24)。 11. 如申請專利範圍第1項之發光二極體,其中活性層 (5)以GaxAlyIni.x.yN爲主而製成,其中0<χ<1, 0幺 y<1 且 x + y< 1 〇 12. 如申請專利範闡第1項之發光二極體,其中多個半 導體晶片(2)相鄰地安裝在透鏡體(3)上。 13. 如申請專利範圍第1項之發光二極體,其中發光二 極體設有外殻(20 ),其可設有螺紋(2 1 )以栓入燈框 中〇 14. 如申請專利範圍第1項之發光二極體,其中發光二 極體在透鏡體(3)之背面上設有一可表面安裝之外殼 ,此外殼可安裝在電性連接板之表面上。 15. 如申請專利範圍第1項之發光二極體,其中半導體 晶片(2 )另外發出紫外線光譜區中之輻射。 16. 如申請專利範圍第1項之發光二極體,其中半導體 晶片(2 )在遠離透鏡體(3 )之側面上具有一種反射層 578315 六、申請專利範圍 (7” 17. 如申請專利範圍第1 2至1 5項中任一項之發光二極 體,其中全部之半導體晶片(2a, 2b)配置在凹口(14) 中。 18. 如申請專利範圍第Π至1 5項中任一項之發光二極 體,其中此基板是導電性基板,藉此可製成活性層 之電性終端之一。 19. 如申請專利範圍第1 8項之發光二極體,其中此基板 是已摻雜之S i C基板。 20. 如申請專利範圍第1或1 5項之發光二極體,其中 半導體晶片(2 )另外發出藍色或短波長之綠色光譜區 中之光束。 21. 如申請專利範圍第1項之發光二極體,其中活性層 (5 )至透鏡體(3 )之距離小於基板(4 )之厚度。 22. —種如申請專利範圍第1至2 1項之發光二極體之製 造方法’其特徵爲:半導體晶片(2 )藉由雷射經由透 鏡體(3 )之焊接,特別是經由透鏡體(3 )上所存在之 導電軌(12),而與透鏡體(3)相連。 23. 如申請專利範圍第22項之製造方法,其中包含以下 各步驟: (a )在晶圓複合物中製成多個透鏡體(3 ); (b )在晶圓複合物之側面上施加多個半導體晶片(2 ) 用之導電軌(12),半導體晶片稍後安裝在這些導 578315 六、申請專利範圍 電軌(1 2 )上; (c )藉由雷射經由晶圓複合物之焊接而在導電軌(1 2 ) 上固定多個半導體晶片; (d )使晶圓複合物切割成較小之透鏡體單元或各別之 透鏡體(3 ),其具有半導體晶片(2 )。 24.如申請專利範圍第23項之製造方法,其中在步驟(c ) 及(d)之間在晶圓複合物上施加多條導電軌(22)以便 與半導體晶片(2 )之背面接觸區(7 )形成電性連接。 -4 -
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Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141556A (ja) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US7053419B1 (en) | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7331700B2 (en) * | 2003-11-14 | 2008-02-19 | A L Lightech, Inc. | High intensity utility light |
US7777235B2 (en) * | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
JP4042668B2 (ja) * | 2003-09-25 | 2008-02-06 | セイコーエプソン株式会社 | 固体発光素子とその製造方法並びにプロジェクタ |
JP4881003B2 (ja) * | 2003-09-26 | 2012-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射を発する薄膜半導体チップ |
JP4471356B2 (ja) | 2004-04-23 | 2010-06-02 | スタンレー電気株式会社 | 半導体発光装置 |
DE102004047640A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement |
US20060091414A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | LED package with front surface heat extractor |
US20060091411A1 (en) * | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7329982B2 (en) * | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US7304425B2 (en) * | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
JP2006278567A (ja) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Ledユニット |
US20080203911A1 (en) * | 2005-04-29 | 2008-08-28 | Koninklijke Philips Electronics N.V. | Light Source With Glass Housing |
DE102005023210A1 (de) * | 2005-05-16 | 2006-11-23 | Noctron S.A.R.L. | Vorrichtung zur Erzeugung von Strahlung sowie Nachtsichtgerät mit einer solchen Vorrichtung |
JP4449837B2 (ja) * | 2005-06-27 | 2010-04-14 | パナソニック電工株式会社 | 発光装置 |
JP2007080884A (ja) * | 2005-09-09 | 2007-03-29 | Asahi Glass Co Ltd | 発光装置の製造方法、発光装置および発光装置の中間部品 |
DE102006049081B4 (de) * | 2006-10-13 | 2012-06-14 | Noctron Soparfi S.A. | Halbleiter-Leuchtmittel und Leuchtpaneel mit solchen |
DE102006015606A1 (de) * | 2006-04-04 | 2007-10-18 | Noctron Holding S.A. | Halbleiter-Leuchtmittel und Leuchtpaneel mit solchen |
US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
US7953293B2 (en) * | 2006-05-02 | 2011-05-31 | Ati Technologies Ulc | Field sequence detector, method and video device |
US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
WO2008011377A2 (en) * | 2006-07-17 | 2008-01-24 | 3M Innovative Properties Company | Led package with converging extractor |
US20080030974A1 (en) * | 2006-08-02 | 2008-02-07 | Abu-Ageel Nayef M | LED-Based Illumination System |
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
US8791631B2 (en) | 2007-07-19 | 2014-07-29 | Quarkstar Llc | Light emitting device |
DE102007049799A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102007059548A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
DE102007061140A1 (de) * | 2007-12-19 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit Kühlelement |
JP2010027645A (ja) * | 2008-07-15 | 2010-02-04 | Ushio Inc | 発光装置及び発光装置の製造方法 |
JP2010021202A (ja) * | 2008-07-08 | 2010-01-28 | Ushio Inc | 発光装置 |
JP5301904B2 (ja) * | 2008-07-09 | 2013-09-25 | ウシオ電機株式会社 | 発光装置 |
US8791471B2 (en) * | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
JP2010147446A (ja) | 2008-12-22 | 2010-07-01 | Panasonic Electric Works Co Ltd | 発光装置 |
US20100202129A1 (en) * | 2009-01-21 | 2010-08-12 | Abu-Ageel Nayef M | Illumination system utilizing wavelength conversion materials and light recycling |
US20110062469A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
DE102010032512A1 (de) * | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
JP6514894B2 (ja) | 2011-11-23 | 2019-05-15 | クォークスター・エルエルシー | 光を非対称に伝搬させる発光デバイス |
DE102011056220A1 (de) * | 2011-12-09 | 2013-06-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
WO2014043384A1 (en) | 2012-09-13 | 2014-03-20 | Quarkstar Llc | Light-emitting device with remote scattering element and total internal reflection extractor element |
EP2895793B1 (en) | 2012-09-13 | 2020-11-04 | Quarkstar LLC | Light-emitting devices with reflective elements |
DE102012109028A1 (de) | 2012-09-25 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
US9683710B2 (en) | 2013-03-07 | 2017-06-20 | Quarkstar Llc | Illumination device with multi-color light-emitting elements |
US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
US10811576B2 (en) | 2013-03-15 | 2020-10-20 | Quarkstar Llc | Color tuning of light-emitting devices |
DE102013209618A1 (de) * | 2013-05-23 | 2014-11-27 | Richard Wolf Gmbh | LED-Baueinheit |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2983823A (en) * | 1956-05-21 | 1961-05-09 | Sprague Electric Co | Optical radiation generating and detecting device |
FR1416993A (fr) * | 1963-12-12 | 1965-11-05 | Gen Electric | Perfectionnements aux sources de lumière à semi-couducteurs |
FR1519635A (fr) * | 1966-12-28 | 1968-04-05 | Radiotechnique Coprim Rtc | Perfectionnement aux dispositifs semi-conducteurs électroluminescents |
US3593055A (en) * | 1969-04-16 | 1971-07-13 | Bell Telephone Labor Inc | Electro-luminescent device |
JPS5216192A (en) * | 1975-07-30 | 1977-02-07 | Hitachi Ltd | Luminous diode and its producing method |
JPS6182486A (ja) * | 1984-09-29 | 1986-04-26 | Sharp Corp | 固体発光表示装置 |
JPS6183065U (zh) * | 1984-11-07 | 1986-06-02 | ||
JPS635581A (ja) * | 1986-06-25 | 1988-01-11 | Semiconductor Res Found | 抵抗器内装型led表示灯の放熱方法 |
JPH02134260A (ja) * | 1988-11-15 | 1990-05-23 | Seiko Epson Corp | 光プリンタヘッド |
JPH04137674A (ja) * | 1990-09-28 | 1992-05-12 | Toshiba Lighting & Technol Corp | 発光ダイオードアレイ |
DE4141980A1 (de) * | 1991-12-19 | 1993-07-01 | Sel Alcatel Ag | Leuchtdiode mit einer umhuellung |
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
JPH077184A (ja) * | 1993-06-14 | 1995-01-10 | Omron Corp | 半導体発光素子、並びに当該発光素子を用いた投光器、光学検知装置及び光学的情報処理装置 |
JP3150025B2 (ja) * | 1993-12-16 | 2001-03-26 | シャープ株式会社 | 発光ダイオードの製造方法 |
US5528474A (en) | 1994-07-18 | 1996-06-18 | Grote Industries, Inc. | Led array vehicle lamp |
DE19527026C2 (de) * | 1995-07-24 | 1997-12-18 | Siemens Ag | Optoelektronischer Wandler und Herstellverfahren |
JP3656236B2 (ja) * | 1995-10-31 | 2005-06-08 | 岩崎電気株式会社 | 発光ダイオード及び発光ダイオードランプ |
DE19603444C2 (de) * | 1996-01-31 | 2003-04-24 | Siemens Ag | LED-Vorrichtung mit mindestens zwei LEDs |
DE19621124A1 (de) * | 1996-05-24 | 1997-11-27 | Siemens Ag | Optoelektronischer Wandler und dessen Herstellungsverfahren |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US5925898A (en) * | 1996-07-18 | 1999-07-20 | Siemens Aktiengesellschaft | Optoelectronic transducer and production methods |
US5990498A (en) * | 1997-09-16 | 1999-11-23 | Polaroid Corporation | Light-emitting diode having uniform irradiance distribution |
DE19803936A1 (de) | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung |
US6294800B1 (en) * | 1998-02-06 | 2001-09-25 | General Electric Company | Phosphors for white light generation from UV emitting diodes |
JP3486345B2 (ja) * | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
US6271049B1 (en) * | 1998-09-14 | 2001-08-07 | Siemens Aktiengesellschaft | Method for producing an optoelectronic component |
JP2002528861A (ja) * | 1998-10-21 | 2002-09-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ledモジュール及び照明器具 |
US6876006B1 (en) * | 1999-04-27 | 2005-04-05 | Schlumberger Technology Corporation | Radiation source |
GB0017655D0 (en) * | 2000-07-19 | 2000-09-06 | Secr Defence | Light emtting diode arrangements |
US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
-
2001
- 2001-01-15 DE DE10101554A patent/DE10101554A1/de not_active Withdrawn
-
2002
- 2002-01-11 TW TW91100289A patent/TW578315B/zh not_active IP Right Cessation
- 2002-01-15 EP EP02702216A patent/EP1352432B9/de not_active Expired - Lifetime
- 2002-01-15 WO PCT/DE2002/000092 patent/WO2002056390A1/de active Search and Examination
- 2002-01-15 JP JP2002556955A patent/JP2004517502A/ja active Pending
- 2002-01-15 US US10/451,836 patent/US7015514B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1352432B9 (de) | 2011-12-07 |
US20040051106A1 (en) | 2004-03-18 |
EP1352432B1 (de) | 2011-06-15 |
EP1352432A1 (de) | 2003-10-15 |
WO2002056390A1 (de) | 2002-07-18 |
US7015514B2 (en) | 2006-03-21 |
JP2004517502A (ja) | 2004-06-10 |
DE10101554A1 (de) | 2002-08-01 |
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