TW561545B - Plasma processing system with dynamic gas distribution control - Google Patents

Plasma processing system with dynamic gas distribution control Download PDF

Info

Publication number
TW561545B
TW561545B TW089124207A TW89124207A TW561545B TW 561545 B TW561545 B TW 561545B TW 089124207 A TW089124207 A TW 089124207A TW 89124207 A TW89124207 A TW 89124207A TW 561545 B TW561545 B TW 561545B
Authority
TW
Taiwan
Prior art keywords
plasma processing
gas
processing chamber
patent application
scope
Prior art date
Application number
TW089124207A
Other languages
English (en)
Chinese (zh)
Inventor
Andrew D Bailey Iii
Alan M Schoepp
David J Hemker
Mark H Wilcoxson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TW561545B publication Critical patent/TW561545B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW089124207A 1999-11-15 2000-11-15 Plasma processing system with dynamic gas distribution control TW561545B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/470,236 US20030155079A1 (en) 1999-11-15 1999-11-15 Plasma processing system with dynamic gas distribution control

Publications (1)

Publication Number Publication Date
TW561545B true TW561545B (en) 2003-11-11

Family

ID=23866787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089124207A TW561545B (en) 1999-11-15 2000-11-15 Plasma processing system with dynamic gas distribution control

Country Status (10)

Country Link
US (1) US20030155079A1 (https=)
EP (1) EP1230665B1 (https=)
JP (1) JP2003518734A (https=)
KR (1) KR100774228B1 (https=)
CN (1) CN1267965C (https=)
AT (1) ATE412250T1 (https=)
AU (1) AU1767401A (https=)
DE (1) DE60040611D1 (https=)
TW (1) TW561545B (https=)
WO (1) WO2001037317A1 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7648914B2 (en) * 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
WO2006094162A2 (en) * 2005-03-03 2006-09-08 Applied Materials, Inc. Method for etching having a controlled distribution of process results
JP4402016B2 (ja) * 2005-06-20 2010-01-20 キヤノン株式会社 蒸着装置及び蒸着方法
US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US20080099437A1 (en) * 2006-10-30 2008-05-01 Richard Lewington Plasma reactor for processing a transparent workpiece with backside process endpoint detection
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US9218944B2 (en) * 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
CN1996546B (zh) * 2006-12-05 2010-05-26 中国科学院等离子体物理研究所 离子源进气实时控制系统及控制方法
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8147614B2 (en) * 2009-06-09 2012-04-03 Applied Materials, Inc. Multi-gas flow diffuser
CN102473634B (zh) * 2009-08-20 2015-02-18 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
KR101048193B1 (ko) * 2009-08-28 2011-07-08 주식회사 디엠에스 에칭가스 제어시스템
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
SI23626A (sl) 2011-01-19 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda za dinamično nadzorovanje gostote nevtralnih atomov v plazemski vakuumski komori in napravaza obdelavo trdih materialov s to metodo
CN103839746A (zh) * 2012-11-26 2014-06-04 上海华虹宏力半导体制造有限公司 刻蚀设备工艺气体供气装置
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US20160002784A1 (en) 2014-07-07 2016-01-07 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for depositing a monolayer on a three dimensional structure
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
JP6920676B2 (ja) * 2017-04-19 2021-08-18 パナソニックＩｐマネジメント株式会社 微粒子製造装置および微粒子製造方法
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN119208119A (zh) * 2023-06-25 2024-12-27 Oppo广东移动通信有限公司 刻蚀装置和刻蚀工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
JP2892070B2 (ja) * 1989-01-26 1999-05-17 キヤノン株式会社 堆積膜形成装置
JPH03224224A (ja) * 1990-01-30 1991-10-03 Fujitsu Ltd ドライエッチング方法
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JP3032104B2 (ja) * 1993-07-20 2000-04-10 住友林業株式会社 柱下端部の固定方法
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US6022446A (en) * 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US5810932A (en) * 1995-11-22 1998-09-22 Nec Corporation Plasma generating apparatus used for fabrication of semiconductor device
JPH10242118A (ja) * 1997-02-27 1998-09-11 Matsushita Electron Corp 半導体装置の製造装置
US6132552A (en) * 1998-02-19 2000-10-17 Micron Technology, Inc. Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor

Also Published As

Publication number Publication date
DE60040611D1 (de) 2008-12-04
CN1423825A (zh) 2003-06-11
KR100774228B1 (ko) 2007-11-07
KR20020060970A (ko) 2002-07-19
EP1230665B1 (en) 2008-10-22
WO2001037317A1 (en) 2001-05-25
AU1767401A (en) 2001-05-30
ATE412250T1 (de) 2008-11-15
CN1267965C (zh) 2006-08-02
JP2003518734A (ja) 2003-06-10
EP1230665A1 (en) 2002-08-14
US20030155079A1 (en) 2003-08-21

Similar Documents

Publication Publication Date Title
TW561545B (en) Plasma processing system with dynamic gas distribution control
JP4388020B2 (ja) 半導体プラズマ処理装置及び方法
TWI799390B (zh) 具有流通源的腔室
JP4550507B2 (ja) プラズマ処理装置
CN100372971C (zh) 分量供给机构及空间分配开关
US5824605A (en) Gas dispersion window for plasma apparatus and method of use thereof
KR101522251B1 (ko) 고 종횡비 피쳐들을 식각하기에 적합한 식각 반응기
JP7096348B2 (ja) 半導体プロセス及び機器向けの磁気誘導プラズマ源
US7585386B2 (en) Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
TW200807549A (en) Edge gas injection for critical dimension uniformity improvement
CN100517563C (zh) 等离子体处理装置和等离子体处理方法
KR20210037318A (ko) 기판 처리 장치와 방법, 그 처리 방법을 이용한 반도체 소자 제조방법
CN102751159A (zh) 等离子体处理设备
TW202312221A (zh) 混合電漿源陣列
US6972264B2 (en) Method and apparatus for etching Si
CN100459058C (zh) 蚀刻方法
KR102868390B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP5055114B2 (ja) プラズマドーピング方法
CN100559554C (zh) 被处理体的蚀刻方法
JP5367000B2 (ja) プラズマ処理装置
JP2021077837A (ja) 基板処理装置
JP3138899B2 (ja) プラズマ処理装置
JP4963694B2 (ja) プラズマ処理装置
CN101593677B (zh) 被处理体的蚀刻方法
JP7454983B2 (ja) エッジリング及びプラズマ処理装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees