AU1767401A - Plasma processing system with dynamic gas distribution control - Google Patents

Plasma processing system with dynamic gas distribution control

Info

Publication number
AU1767401A
AU1767401A AU17674/01A AU1767401A AU1767401A AU 1767401 A AU1767401 A AU 1767401A AU 17674/01 A AU17674/01 A AU 17674/01A AU 1767401 A AU1767401 A AU 1767401A AU 1767401 A AU1767401 A AU 1767401A
Authority
AU
Australia
Prior art keywords
plasma processing
gas
processing chamber
processing system
gas distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU17674/01A
Other languages
English (en)
Inventor
Andrew D. Bailey Iii
David J. Hemker
Alan M. Schoepp
Mark H. Wilcoxson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU1767401A publication Critical patent/AU1767401A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU17674/01A 1999-11-15 2000-11-14 Plasma processing system with dynamic gas distribution control Abandoned AU1767401A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/470,236 US20030155079A1 (en) 1999-11-15 1999-11-15 Plasma processing system with dynamic gas distribution control
US09470236 1999-11-15
PCT/US2000/031434 WO2001037317A1 (en) 1999-11-15 2000-11-14 Plasma processing system with dynamic gas distribution control

Publications (1)

Publication Number Publication Date
AU1767401A true AU1767401A (en) 2001-05-30

Family

ID=23866787

Family Applications (1)

Application Number Title Priority Date Filing Date
AU17674/01A Abandoned AU1767401A (en) 1999-11-15 2000-11-14 Plasma processing system with dynamic gas distribution control

Country Status (10)

Country Link
US (1) US20030155079A1 (https=)
EP (1) EP1230665B1 (https=)
JP (1) JP2003518734A (https=)
KR (1) KR100774228B1 (https=)
CN (1) CN1267965C (https=)
AT (1) ATE412250T1 (https=)
AU (1) AU1767401A (https=)
DE (1) DE60040611D1 (https=)
TW (1) TW561545B (https=)
WO (1) WO2001037317A1 (https=)

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US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US20080099437A1 (en) * 2006-10-30 2008-05-01 Richard Lewington Plasma reactor for processing a transparent workpiece with backside process endpoint detection
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US9218944B2 (en) * 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
CN1996546B (zh) * 2006-12-05 2010-05-26 中国科学院等离子体物理研究所 离子源进气实时控制系统及控制方法
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8147614B2 (en) * 2009-06-09 2012-04-03 Applied Materials, Inc. Multi-gas flow diffuser
CN102473634B (zh) * 2009-08-20 2015-02-18 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
KR101048193B1 (ko) * 2009-08-28 2011-07-08 주식회사 디엠에스 에칭가스 제어시스템
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
SI23626A (sl) 2011-01-19 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda za dinamično nadzorovanje gostote nevtralnih atomov v plazemski vakuumski komori in napravaza obdelavo trdih materialov s to metodo
CN103839746A (zh) * 2012-11-26 2014-06-04 上海华虹宏力半导体制造有限公司 刻蚀设备工艺气体供气装置
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US20160002784A1 (en) 2014-07-07 2016-01-07 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for depositing a monolayer on a three dimensional structure
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
JP6920676B2 (ja) * 2017-04-19 2021-08-18 パナソニックＩｐマネジメント株式会社 微粒子製造装置および微粒子製造方法
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN119208119A (zh) * 2023-06-25 2024-12-27 Oppo广东移动通信有限公司 刻蚀装置和刻蚀工艺

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JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
JP2892070B2 (ja) * 1989-01-26 1999-05-17 キヤノン株式会社 堆積膜形成装置
JPH03224224A (ja) * 1990-01-30 1991-10-03 Fujitsu Ltd ドライエッチング方法
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
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US6022446A (en) * 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
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Also Published As

Publication number Publication date
DE60040611D1 (de) 2008-12-04
CN1423825A (zh) 2003-06-11
KR100774228B1 (ko) 2007-11-07
KR20020060970A (ko) 2002-07-19
EP1230665B1 (en) 2008-10-22
WO2001037317A1 (en) 2001-05-25
ATE412250T1 (de) 2008-11-15
CN1267965C (zh) 2006-08-02
JP2003518734A (ja) 2003-06-10
EP1230665A1 (en) 2002-08-14
US20030155079A1 (en) 2003-08-21
TW561545B (en) 2003-11-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase