KR100774228B1 - 동적 가스 분배 제어를 갖는 플라즈마 처리 시스템 - Google Patents

동적 가스 분배 제어를 갖는 플라즈마 처리 시스템 Download PDF

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Publication number
KR100774228B1
KR100774228B1 KR1020027006163A KR20027006163A KR100774228B1 KR 100774228 B1 KR100774228 B1 KR 100774228B1 KR 1020027006163 A KR1020027006163 A KR 1020027006163A KR 20027006163 A KR20027006163 A KR 20027006163A KR 100774228 B1 KR100774228 B1 KR 100774228B1
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South Korea
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gas
plasma processing
processing chamber
region
different regions
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Expired - Fee Related
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Korean (ko)
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KR20020060970A (ko
Inventor
앤드류 디. Ⅲ 베일리
앨렌 엠. 쇼에프
데이비드 제이. 헴커
마크 에이취. 윌콕슨
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020027006163A 1999-11-15 2000-11-14 동적 가스 분배 제어를 갖는 플라즈마 처리 시스템 Expired - Fee Related KR100774228B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/470,236 US20030155079A1 (en) 1999-11-15 1999-11-15 Plasma processing system with dynamic gas distribution control
US09/470,236 1999-11-15

Publications (2)

Publication Number Publication Date
KR20020060970A KR20020060970A (ko) 2002-07-19
KR100774228B1 true KR100774228B1 (ko) 2007-11-07

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KR1020027006163A Expired - Fee Related KR100774228B1 (ko) 1999-11-15 2000-11-14 동적 가스 분배 제어를 갖는 플라즈마 처리 시스템

Country Status (10)

Country Link
US (1) US20030155079A1 (https=)
EP (1) EP1230665B1 (https=)
JP (1) JP2003518734A (https=)
KR (1) KR100774228B1 (https=)
CN (1) CN1267965C (https=)
AT (1) ATE412250T1 (https=)
AU (1) AU1767401A (https=)
DE (1) DE60040611D1 (https=)
TW (1) TW561545B (https=)
WO (1) WO2001037317A1 (https=)

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US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US20080099437A1 (en) * 2006-10-30 2008-05-01 Richard Lewington Plasma reactor for processing a transparent workpiece with backside process endpoint detection
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US9218944B2 (en) * 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
CN1996546B (zh) * 2006-12-05 2010-05-26 中国科学院等离子体物理研究所 离子源进气实时控制系统及控制方法
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8147614B2 (en) * 2009-06-09 2012-04-03 Applied Materials, Inc. Multi-gas flow diffuser
CN102473634B (zh) * 2009-08-20 2015-02-18 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
KR101048193B1 (ko) * 2009-08-28 2011-07-08 주식회사 디엠에스 에칭가스 제어시스템
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
SI23626A (sl) 2011-01-19 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda za dinamično nadzorovanje gostote nevtralnih atomov v plazemski vakuumski komori in napravaza obdelavo trdih materialov s to metodo
CN103839746A (zh) * 2012-11-26 2014-06-04 上海华虹宏力半导体制造有限公司 刻蚀设备工艺气体供气装置
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US20160002784A1 (en) 2014-07-07 2016-01-07 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for depositing a monolayer on a three dimensional structure
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
JP6920676B2 (ja) * 2017-04-19 2021-08-18 パナソニックＩｐマネジメント株式会社 微粒子製造装置および微粒子製造方法
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN119208119A (zh) * 2023-06-25 2024-12-27 Oppo广东移动通信有限公司 刻蚀装置和刻蚀工艺

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JPH09139380A (ja) * 1995-08-21 1997-05-27 Applied Materials Inc 電子の循環によりプラズマ処理を向上するための浅い磁場

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JPH09139380A (ja) * 1995-08-21 1997-05-27 Applied Materials Inc 電子の循環によりプラズマ処理を向上するための浅い磁場

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Publication number Publication date
DE60040611D1 (de) 2008-12-04
CN1423825A (zh) 2003-06-11
KR20020060970A (ko) 2002-07-19
EP1230665B1 (en) 2008-10-22
WO2001037317A1 (en) 2001-05-25
AU1767401A (en) 2001-05-30
ATE412250T1 (de) 2008-11-15
CN1267965C (zh) 2006-08-02
JP2003518734A (ja) 2003-06-10
EP1230665A1 (en) 2002-08-14
US20030155079A1 (en) 2003-08-21
TW561545B (en) 2003-11-11

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