ATE412250T1 - Plasmabehandlungsvorrichtung mit dynamischer gaszuführsteuerung - Google Patents

Plasmabehandlungsvorrichtung mit dynamischer gaszuführsteuerung

Info

Publication number
ATE412250T1
ATE412250T1 AT00980409T AT00980409T ATE412250T1 AT E412250 T1 ATE412250 T1 AT E412250T1 AT 00980409 T AT00980409 T AT 00980409T AT 00980409 T AT00980409 T AT 00980409T AT E412250 T1 ATE412250 T1 AT E412250T1
Authority
AT
Austria
Prior art keywords
plasma processing
gas
processing chamber
gas supply
treatment device
Prior art date
Application number
AT00980409T
Other languages
German (de)
English (en)
Inventor
Andrew Bailey
Alan Schoepp
David Hemker
Mark Wilcoxson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE412250T1 publication Critical patent/ATE412250T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT00980409T 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung mit dynamischer gaszuführsteuerung ATE412250T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/470,236 US20030155079A1 (en) 1999-11-15 1999-11-15 Plasma processing system with dynamic gas distribution control

Publications (1)

Publication Number Publication Date
ATE412250T1 true ATE412250T1 (de) 2008-11-15

Family

ID=23866787

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00980409T ATE412250T1 (de) 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung mit dynamischer gaszuführsteuerung

Country Status (10)

Country Link
US (1) US20030155079A1 (https=)
EP (1) EP1230665B1 (https=)
JP (1) JP2003518734A (https=)
KR (1) KR100774228B1 (https=)
CN (1) CN1267965C (https=)
AT (1) ATE412250T1 (https=)
AU (1) AU1767401A (https=)
DE (1) DE60040611D1 (https=)
TW (1) TW561545B (https=)
WO (1) WO2001037317A1 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7648914B2 (en) * 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
DE112006000327T5 (de) * 2005-03-03 2007-12-27 Applied Materials, Inc., Santa Clara Vorrichtung zur Temperatursteuerung eines Substrats
JP4402016B2 (ja) * 2005-06-20 2010-01-20 キヤノン株式会社 蒸着装置及び蒸着方法
US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7897008B2 (en) 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
US9218944B2 (en) 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US20080099437A1 (en) * 2006-10-30 2008-05-01 Richard Lewington Plasma reactor for processing a transparent workpiece with backside process endpoint detection
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
CN1996546B (zh) * 2006-12-05 2010-05-26 中国科学院等离子体物理研究所 离子源进气实时控制系统及控制方法
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8147614B2 (en) * 2009-06-09 2012-04-03 Applied Materials, Inc. Multi-gas flow diffuser
KR101386552B1 (ko) * 2009-08-20 2014-04-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법
KR101048193B1 (ko) * 2009-08-28 2011-07-08 주식회사 디엠에스 에칭가스 제어시스템
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
SI23626A (sl) 2011-01-19 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda za dinamično nadzorovanje gostote nevtralnih atomov v plazemski vakuumski komori in napravaza obdelavo trdih materialov s to metodo
CN103839746A (zh) * 2012-11-26 2014-06-04 上海华虹宏力半导体制造有限公司 刻蚀设备工艺气体供气装置
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US20160002784A1 (en) 2014-07-07 2016-01-07 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for depositing a monolayer on a three dimensional structure
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
JP6920676B2 (ja) * 2017-04-19 2021-08-18 パナソニックＩｐマネジメント株式会社 微粒子製造装置および微粒子製造方法
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN119208119A (zh) * 2023-06-25 2024-12-27 Oppo广东移动通信有限公司 刻蚀装置和刻蚀工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
JP2892070B2 (ja) * 1989-01-26 1999-05-17 キヤノン株式会社 堆積膜形成装置
JPH03224224A (ja) * 1990-01-30 1991-10-03 Fujitsu Ltd ドライエッチング方法
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JP3032104B2 (ja) * 1993-07-20 2000-04-10 住友林業株式会社 柱下端部の固定方法
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US6022446A (en) * 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US5810932A (en) * 1995-11-22 1998-09-22 Nec Corporation Plasma generating apparatus used for fabrication of semiconductor device
JPH10242118A (ja) * 1997-02-27 1998-09-11 Matsushita Electron Corp 半導体装置の製造装置
US6132552A (en) * 1998-02-19 2000-10-17 Micron Technology, Inc. Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor

Also Published As

Publication number Publication date
CN1423825A (zh) 2003-06-11
KR100774228B1 (ko) 2007-11-07
CN1267965C (zh) 2006-08-02
DE60040611D1 (de) 2008-12-04
WO2001037317A1 (en) 2001-05-25
TW561545B (en) 2003-11-11
JP2003518734A (ja) 2003-06-10
EP1230665B1 (en) 2008-10-22
EP1230665A1 (en) 2002-08-14
KR20020060970A (ko) 2002-07-19
AU1767401A (en) 2001-05-30
US20030155079A1 (en) 2003-08-21

Similar Documents

Publication Publication Date Title
ATE412250T1 (de) Plasmabehandlungsvorrichtung mit dynamischer gaszuführsteuerung
WO2002051353A3 (en) Device and method for treatment of surface infections with nitric oxide
WO2004001804A3 (en) Device for generation of reactive ions
WO2002015236A3 (en) Wafer area pressure control
WO2004008008A3 (en) Control of a gaseous environment in a wafer loading chamber
EP1473044A3 (en) Vapor sterilization using inorganic hydrogen peroxide complexes
TW200514866A (en) Processing apparatus and method
WO2005124827A3 (en) Improved method and apparatus for the etching of microstructures
GB9513218D0 (en) Inhalation device and method
EP1243667A3 (en) Gas recirculation flow control method and apparatus for use in vacuum system for semiconductor manufacture
WO2006034130A3 (en) Apparatus and process for surface treatment of substrate using an activated reactive gas
DE60038811D1 (de) Behandlungsvorrichtungen
BR0314736A (pt) Controle de processos de tratamento de água residual
EP1192953A3 (en) Power system for sterilization systems employing low frequency plasma
SG49983A1 (en) Vapor sterilization using inorganic hydrogen peroxide complexes
TW200636856A (en) Semiconductor processing apparatus and method
WO2005034163A3 (en) Apparatus and method for plasma treating a substrate
DE69942020D1 (de) Plasmabehandlungsgerät
SI1644156T1 (sl) Postopek napajanja plazemskega gorilnika s plinom, mešanim plinom ali zmesjo plinov, ki ga sestavlja uravnavanje volumskega pretoka v kombinaciji z uravnavanjem tlaka, in naprava za izvedbo tega postopka
TW428075B (en) Pressure insensitive gas control system
JP2000208498A5 (https=)
WO2002091809A3 (fr) Procede et dispositif de generation d'un rideau de gaz active pour traitement de surface
TW200712252A (en) Methods and systems for increasing substrate temperature in plasma reactors
DK1485649T3 (da) Styresystem til et affaldsbehandlingsanlæg
MXPA05011288A (es) Metodo y aparato para recoleccion de vapor.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties