TW557501B - Process for fabrication of semiconductor device - Google Patents

Process for fabrication of semiconductor device Download PDF

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Publication number
TW557501B
TW557501B TW091104128A TW91104128A TW557501B TW 557501 B TW557501 B TW 557501B TW 091104128 A TW091104128 A TW 091104128A TW 91104128 A TW91104128 A TW 91104128A TW 557501 B TW557501 B TW 557501B
Authority
TW
Taiwan
Prior art keywords
ruthenium
gas
film
partial pressure
oxygen
Prior art date
Application number
TW091104128A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Shimamoto
Masahiko Hiratani
Yuichi Matsui
Toshihide Nabatame
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW557501B publication Critical patent/TW557501B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW091104128A 2001-03-26 2002-03-06 Process for fabrication of semiconductor device TW557501B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001086930A JP2002285333A (ja) 2001-03-26 2001-03-26 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW557501B true TW557501B (en) 2003-10-11

Family

ID=18942238

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091104128A TW557501B (en) 2001-03-26 2002-03-06 Process for fabrication of semiconductor device

Country Status (4)

Country Link
US (2) US6743739B2 (https=)
JP (1) JP2002285333A (https=)
KR (1) KR20020076147A (https=)
TW (1) TW557501B (https=)

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TWI632619B (zh) * 2011-05-25 2018-08-11 半導體能源研究所股份有限公司 形成氧化物半導體膜的方法、半導體裝置及製造該半導體裝置的方法

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JP4218350B2 (ja) * 2002-02-01 2009-02-04 パナソニック株式会社 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ
KR100476556B1 (ko) * 2002-04-11 2005-03-18 삼성전기주식회사 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
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US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
JP2004146559A (ja) * 2002-10-24 2004-05-20 Elpida Memory Inc 容量素子の製造方法
JP4586956B2 (ja) * 2002-12-24 2010-11-24 セイコーエプソン株式会社 電極膜の製造方法
US20040146643A1 (en) * 2003-01-24 2004-07-29 Shih-Liang Chou Method of determining deposition temperature
KR100505674B1 (ko) * 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US20050253268A1 (en) * 2004-04-22 2005-11-17 Shao-Ta Hsu Method and structure for improving adhesion between intermetal dielectric layer and cap layer
JP4571836B2 (ja) * 2004-07-23 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
DE102004061094A1 (de) * 2004-12-18 2006-06-22 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen sowie dazu geeignete Ausgangsstoffe
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
KR100672731B1 (ko) * 2005-10-04 2007-01-24 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
US20070128862A1 (en) 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
US20090022891A1 (en) * 2006-02-08 2009-01-22 Jsr Corporation Method of forming metal film
KR101203254B1 (ko) * 2006-02-28 2012-11-21 도쿄엘렉트론가부시키가이샤 루테늄막의 성막 방법 및 컴퓨터 판독 가능한 기억 매체
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JP2007266464A (ja) * 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
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US8524931B2 (en) * 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
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Publication number Priority date Publication date Assignee Title
TWI632619B (zh) * 2011-05-25 2018-08-11 半導體能源研究所股份有限公司 形成氧化物半導體膜的方法、半導體裝置及製造該半導體裝置的方法
US11489077B2 (en) 2011-05-25 2022-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US11967648B2 (en) 2011-05-25 2024-04-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US12062724B2 (en) 2011-05-25 2024-08-13 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US12170339B2 (en) 2011-05-25 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20020192899A1 (en) 2002-12-19
KR20020076147A (ko) 2002-10-09
US6743739B2 (en) 2004-06-01
JP2002285333A (ja) 2002-10-03
US6992022B2 (en) 2006-01-31
US20040171210A1 (en) 2004-09-02

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