TW546844B - Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same - Google Patents
Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same Download PDFInfo
- Publication number
- TW546844B TW546844B TW091110669A TW91110669A TW546844B TW 546844 B TW546844 B TW 546844B TW 091110669 A TW091110669 A TW 091110669A TW 91110669 A TW91110669 A TW 91110669A TW 546844 B TW546844 B TW 546844B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- epitaxial
- conductivity type
- patent application
- transient voltage
- Prior art date
Links
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- 238000000034 method Methods 0.000 title claims description 26
- 230000015556 catabolic process Effects 0.000 claims abstract description 64
- 230000001052 transient effect Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 230000002457 bidirectional effect Effects 0.000 claims description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
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- 230000002079 cooperative effect Effects 0.000 claims description 10
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- 239000000463 material Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000008901 benefit Effects 0.000 description 9
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- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
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- 125000004429 atom Chemical group 0.000 description 5
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/041—Manufacture or treatment of multilayer diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/862,664 US6489660B1 (en) | 2001-05-22 | 2001-05-22 | Low-voltage punch-through bi-directional transient-voltage suppression devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW546844B true TW546844B (en) | 2003-08-11 |
Family
ID=25338998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091110669A TW546844B (en) | 2001-05-22 | 2002-05-21 | Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6489660B1 (enExample) |
| EP (1) | EP1396027B1 (enExample) |
| JP (1) | JP4685333B2 (enExample) |
| KR (1) | KR100879337B1 (enExample) |
| CN (1) | CN1307723C (enExample) |
| TW (1) | TW546844B (enExample) |
| WO (1) | WO2002095831A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382627B (zh) * | 2007-11-01 | 2013-01-11 | Alpha & Omega Semiconductor | 製造在絕緣物上矽層中的暫態電壓抑制器的方法 |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600204B2 (en) * | 2001-07-11 | 2003-07-29 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same |
| US7244970B2 (en) * | 2004-12-22 | 2007-07-17 | Tyco Electronics Corporation | Low capacitance two-terminal barrier controlled TVS diodes |
| US20060216913A1 (en) * | 2005-03-25 | 2006-09-28 | Pu-Ju Kung | Asymmetric bidirectional transient voltage suppressor and method of forming same |
| US20070077738A1 (en) * | 2005-10-03 | 2007-04-05 | Aram Tanielian | Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses |
| US7329940B2 (en) * | 2005-11-02 | 2008-02-12 | International Business Machines Corporation | Semiconductor structure and method of manufacture |
| CN101563784B (zh) | 2006-06-23 | 2011-04-20 | 维谢综合半导体有限责任公司 | 低正向电压降的瞬态电压抑制器及其制造方法 |
| US7936041B2 (en) * | 2006-09-15 | 2011-05-03 | International Business Machines Corporation | Schottky barrier diodes for millimeter wave SiGe BICMOS applications |
| US7579632B2 (en) * | 2007-09-21 | 2009-08-25 | Semiconductor Components Industries, L.L.C. | Multi-channel ESD device and method therefor |
| US7538395B2 (en) * | 2007-09-21 | 2009-05-26 | Semiconductor Components Industries, L.L.C. | Method of forming low capacitance ESD device and structure therefor |
| US7666751B2 (en) * | 2007-09-21 | 2010-02-23 | Semiconductor Components Industries, Llc | Method of forming a high capacitance diode and structure therefor |
| US7842969B2 (en) | 2008-07-10 | 2010-11-30 | Semiconductor Components Industries, Llc | Low clamp voltage ESD device and method therefor |
| US7955941B2 (en) * | 2008-09-11 | 2011-06-07 | Semiconductor Components Industries, Llc | Method of forming an integrated semiconductor device and structure therefor |
| US7812367B2 (en) * | 2008-10-15 | 2010-10-12 | Semiconductor Components Industries, Llc | Two terminal low capacitance multi-channel ESD device |
| US8089095B2 (en) | 2008-10-15 | 2012-01-03 | Semiconductor Components Industries, Llc | Two terminal multi-channel ESD device and method therefor |
| US8445917B2 (en) * | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
| US8288839B2 (en) * | 2009-04-30 | 2012-10-16 | Alpha & Omega Semiconductor, Inc. | Transient voltage suppressor having symmetrical breakdown voltages |
| FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
| US8384126B2 (en) | 2010-06-22 | 2013-02-26 | Littelfuse, Inc. | Low voltage PNPN protection device |
| US8557654B2 (en) | 2010-12-13 | 2013-10-15 | Sandisk 3D Llc | Punch-through diode |
| US8530902B2 (en) * | 2011-10-26 | 2013-09-10 | General Electric Company | System for transient voltage suppressors |
| US8835976B2 (en) | 2012-03-14 | 2014-09-16 | General Electric Company | Method and system for ultra miniaturized packages for transient voltage suppressors |
| US9042072B2 (en) | 2012-03-30 | 2015-05-26 | General Electric Company | Method and system for lightning protection with distributed transient voltage suppression |
| US9337178B2 (en) | 2012-12-09 | 2016-05-10 | Semiconductor Components Industries, Llc | Method of forming an ESD device and structure therefor |
| US8987858B2 (en) | 2013-03-18 | 2015-03-24 | General Electric Company | Method and system for transient voltage suppression |
| US9997507B2 (en) * | 2013-07-25 | 2018-06-12 | General Electric Company | Semiconductor assembly and method of manufacture |
| US9806157B2 (en) * | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| US10217733B2 (en) | 2015-09-15 | 2019-02-26 | Semiconductor Components Industries, Llc | Fast SCR structure for ESD protection |
| US9773777B2 (en) * | 2016-01-08 | 2017-09-26 | Texas Instruments Incorporated | Low dynamic resistance low capacitance diodes |
| CN107346736B (zh) * | 2016-05-06 | 2019-11-05 | 华润微电子（重庆）有限公司 | 双向瞬态电压抑制二极管及其制作方法 |
| US10014388B1 (en) | 2017-01-04 | 2018-07-03 | General Electric Company | Transient voltage suppression devices with symmetric breakdown characteristics |
| US10535648B2 (en) | 2017-08-23 | 2020-01-14 | Semiconductor Components Industries, Llc | TVS semiconductor device and method therefor |
| CN108520874B (zh) * | 2018-03-28 | 2021-04-06 | 南京矽力微电子技术有限公司 | 半导体器件及其制造方法 |
| CN109449152B (zh) * | 2018-10-31 | 2020-12-22 | 深圳市巴达木科技有限公司 | 一种抑制芯片及其制备方法 |
| CN112447821A (zh) * | 2019-09-02 | 2021-03-05 | 珠海零边界集成电路有限公司 | 一种终端结构制造方法 |
| CN111564439B (zh) * | 2020-05-07 | 2024-01-23 | 上海韦尔半导体股份有限公司 | 一种双向瞬态电压抑制保护器件、制作工艺及电子产品 |
| CN114171385A (zh) * | 2022-02-14 | 2022-03-11 | 浙江里阳半导体有限公司 | 一种低压瞬态抑制二极管及其制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US523214A (en) * | 1894-07-17 | Floor-jack | ||
| US3907615A (en) * | 1968-06-28 | 1975-09-23 | Philips Corp | Production of a three-layer diac with five-layer edge regions having middle region thinner at center than edge |
| JPS4915385A (enExample) * | 1972-05-18 | 1974-02-09 | ||
| US4027324A (en) * | 1972-12-29 | 1977-05-31 | Sony Corporation | Bidirectional transistor |
| JPS5390884A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Semiconductor device |
| JPS5413277A (en) * | 1977-07-01 | 1979-01-31 | Hitachi Ltd | Semiconductor device of constant voltage |
| JPS58161378A (ja) * | 1982-03-18 | 1983-09-24 | Toshiba Corp | 定電圧ダイオ−ド |
| JPS5999777A (ja) * | 1982-11-29 | 1984-06-08 | Nec Home Electronics Ltd | 半導体装置の製造方法 |
| JPS62150773A (ja) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | Ｇｔｏサイリスタの製造方法 |
| JPH01111375A (ja) * | 1987-10-26 | 1989-04-28 | Fuji Electric Co Ltd | ゲート・ターン・オフ・サイリスタ |
| US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
| US5166769A (en) | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
| DE3930697A1 (de) * | 1989-09-14 | 1991-03-28 | Bosch Gmbh Robert | Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung |
| US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
| JP3994443B2 (ja) * | 1995-05-18 | 2007-10-17 | 三菱電機株式会社 | ダイオード及びその製造方法 |
| US5880511A (en) | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
| TW335557B (en) * | 1996-04-29 | 1998-07-01 | Philips Electronics Nv | Semiconductor device |
| DE19713962C1 (de) * | 1997-04-04 | 1998-07-02 | Siemens Ag | Leistungsdiode (FCI-Diode) |
-
2001
- 2001-05-22 US US09/862,664 patent/US6489660B1/en not_active Expired - Lifetime
-
2002
- 2002-05-21 TW TW091110669A patent/TW546844B/zh not_active IP Right Cessation
- 2002-05-22 KR KR1020037015153A patent/KR100879337B1/ko not_active Expired - Lifetime
- 2002-05-22 EP EP02729288A patent/EP1396027B1/en not_active Expired - Lifetime
- 2002-05-22 WO PCT/US2002/016241 patent/WO2002095831A1/en not_active Ceased
- 2002-05-22 JP JP2002592196A patent/JP4685333B2/ja not_active Expired - Lifetime
- 2002-05-22 CN CNB028105699A patent/CN1307723C/zh not_active Expired - Lifetime
- 2002-10-04 US US10/264,950 patent/US6602769B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382627B (zh) * | 2007-11-01 | 2013-01-11 | Alpha & Omega Semiconductor | 製造在絕緣物上矽層中的暫態電壓抑制器的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1396027B1 (en) | 2012-12-19 |
| US6489660B1 (en) | 2002-12-03 |
| US20020175391A1 (en) | 2002-11-28 |
| JP2005505913A (ja) | 2005-02-24 |
| JP4685333B2 (ja) | 2011-05-18 |
| US20030038340A1 (en) | 2003-02-27 |
| EP1396027A1 (en) | 2004-03-10 |
| CN1307723C (zh) | 2007-03-28 |
| CN1520614A (zh) | 2004-08-11 |
| EP1396027A4 (en) | 2008-05-14 |
| KR20040000485A (ko) | 2004-01-03 |
| WO2002095831A1 (en) | 2002-11-28 |
| KR100879337B1 (ko) | 2009-01-19 |
| US6602769B2 (en) | 2003-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |