CN1307723C - 低电压穿通双向瞬态电压抑制器件以及制作该器件的方法 - Google Patents

低电压穿通双向瞬态电压抑制器件以及制作该器件的方法 Download PDF

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Publication number
CN1307723C
CN1307723C CNB028105699A CN02810569A CN1307723C CN 1307723 C CN1307723 C CN 1307723C CN B028105699 A CNB028105699 A CN B028105699A CN 02810569 A CN02810569 A CN 02810569A CN 1307723 C CN1307723 C CN 1307723C
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layer
epitaxial
conductivity type
breakdown
transient voltage
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CN1520614A (zh
Inventor
威廉G·艾因特霉芬
劳伦斯·拉泰尔扎
加里·霉斯曼
杰克·恩格
丹尼·加尔比斯
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General Semiconductor Inc
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General Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes

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CNB028105699A 2001-05-22 2002-05-22 低电压穿通双向瞬态电压抑制器件以及制作该器件的方法 Expired - Lifetime CN1307723C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/862,664 US6489660B1 (en) 2001-05-22 2001-05-22 Low-voltage punch-through bi-directional transient-voltage suppression devices
US09/862,664 2001-05-22

Publications (2)

Publication Number Publication Date
CN1520614A CN1520614A (zh) 2004-08-11
CN1307723C true CN1307723C (zh) 2007-03-28

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CNB028105699A Expired - Lifetime CN1307723C (zh) 2001-05-22 2002-05-22 低电压穿通双向瞬态电压抑制器件以及制作该器件的方法

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US (2) US6489660B1 (enExample)
EP (1) EP1396027B1 (enExample)
JP (1) JP4685333B2 (enExample)
KR (1) KR100879337B1 (enExample)
CN (1) CN1307723C (enExample)
TW (1) TW546844B (enExample)
WO (1) WO2002095831A1 (enExample)

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US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US7244970B2 (en) 2004-12-22 2007-07-17 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
US20060216913A1 (en) * 2005-03-25 2006-09-28 Pu-Ju Kung Asymmetric bidirectional transient voltage suppressor and method of forming same
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
US7329940B2 (en) * 2005-11-02 2008-02-12 International Business Machines Corporation Semiconductor structure and method of manufacture
JP2009541996A (ja) 2006-06-23 2009-11-26 ヴィシェイ ジェネラル セミコンダクター，エルエルシー 低順方向電圧降下過渡電圧サプレッサーおよび製造方法
US7936041B2 (en) * 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
US7538395B2 (en) * 2007-09-21 2009-05-26 Semiconductor Components Industries, L.L.C. Method of forming low capacitance ESD device and structure therefor
US7666751B2 (en) 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
US20090115018A1 (en) * 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US7842969B2 (en) 2008-07-10 2010-11-30 Semiconductor Components Industries, Llc Low clamp voltage ESD device and method therefor
US7955941B2 (en) * 2008-09-11 2011-06-07 Semiconductor Components Industries, Llc Method of forming an integrated semiconductor device and structure therefor
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device
US8089095B2 (en) 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
US8445917B2 (en) * 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
US8384126B2 (en) 2010-06-22 2013-02-26 Littelfuse, Inc. Low voltage PNPN protection device
US8557654B2 (en) 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
US8530902B2 (en) 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US9337178B2 (en) 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
US9773777B2 (en) * 2016-01-08 2017-09-26 Texas Instruments Incorporated Low dynamic resistance low capacitance diodes
CN107346736B (zh) * 2016-05-06 2019-11-05 华润微电子（重庆）有限公司 双向瞬态电压抑制二极管及其制作方法
US10014388B1 (en) * 2017-01-04 2018-07-03 General Electric Company Transient voltage suppression devices with symmetric breakdown characteristics
US10535648B2 (en) 2017-08-23 2020-01-14 Semiconductor Components Industries, Llc TVS semiconductor device and method therefor
CN108520874B (zh) * 2018-03-28 2021-04-06 南京矽力微电子技术有限公司 半导体器件及其制造方法
CN109449152B (zh) * 2018-10-31 2020-12-22 深圳市巴达木科技有限公司 一种抑制芯片及其制备方法
CN112447821A (zh) * 2019-09-02 2021-03-05 珠海零边界集成电路有限公司 一种终端结构制造方法
CN111564439B (zh) * 2020-05-07 2024-01-23 上海韦尔半导体股份有限公司 一种双向瞬态电压抑制保护器件、制作工艺及电子产品
CN114171385A (zh) * 2022-02-14 2022-03-11 浙江里阳半导体有限公司 一种低压瞬态抑制二极管及其制造方法

Citations (3)

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US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US6069043A (en) * 1995-03-31 2000-05-30 Siliconix Incorporated Method of making punch-through field effect transistor

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JPS62150773A (ja) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Ｇｔｏサイリスタの製造方法
JPH01111375A (ja) * 1987-10-26 1989-04-28 Fuji Electric Co Ltd ゲート・ターン・オフ・サイリスタ
US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
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DE3930697A1 (de) * 1989-09-14 1991-03-28 Bosch Gmbh Robert Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung
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US5880511A (en) * 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
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Patent Citations (3)

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US523214A (en) * 1894-07-17 Floor-jack
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US6069043A (en) * 1995-03-31 2000-05-30 Siliconix Incorporated Method of making punch-through field effect transistor

Also Published As

Publication number Publication date
TW546844B (en) 2003-08-11
US6602769B2 (en) 2003-08-05
JP2005505913A (ja) 2005-02-24
JP4685333B2 (ja) 2011-05-18
KR20040000485A (ko) 2004-01-03
US6489660B1 (en) 2002-12-03
EP1396027A1 (en) 2004-03-10
CN1520614A (zh) 2004-08-11
WO2002095831A1 (en) 2002-11-28
KR100879337B1 (ko) 2009-01-19
US20020175391A1 (en) 2002-11-28
EP1396027B1 (en) 2012-12-19
US20030038340A1 (en) 2003-02-27
EP1396027A4 (en) 2008-05-14

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