JP4685333B2 - 低電圧パンチスルー双方向過渡電圧抑制素子 - Google Patents

低電圧パンチスルー双方向過渡電圧抑制素子 Download PDF

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JP4685333B2
JP4685333B2 JP2002592196A JP2002592196A JP4685333B2 JP 4685333 B2 JP4685333 B2 JP 4685333B2 JP 2002592196 A JP2002592196 A JP 2002592196A JP 2002592196 A JP2002592196 A JP 2002592196A JP 4685333 B2 JP4685333 B2 JP 4685333B2
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semiconductor layer
layer
junction
transient voltage
bidirectional transient
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JP2005505913A (ja
JP2005505913A5 (enExample
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アイントホーフェン、ウィレム、ジー
ラテルザ、ローレンス
ホースマン、ゲイリー
エング、ジャック
ガルビス、ダニー
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ゼネラル セミコンダクター，インク．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes

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  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
JP2002592196A 2001-05-22 2002-05-22 低電圧パンチスルー双方向過渡電圧抑制素子 Expired - Lifetime JP4685333B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/862,664 US6489660B1 (en) 2001-05-22 2001-05-22 Low-voltage punch-through bi-directional transient-voltage suppression devices
PCT/US2002/016241 WO2002095831A1 (en) 2001-05-22 2002-05-22 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same

Publications (3)

Publication Number Publication Date
JP2005505913A JP2005505913A (ja) 2005-02-24
JP2005505913A5 JP2005505913A5 (enExample) 2006-01-05
JP4685333B2 true JP4685333B2 (ja) 2011-05-18

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JP2002592196A Expired - Lifetime JP4685333B2 (ja) 2001-05-22 2002-05-22 低電圧パンチスルー双方向過渡電圧抑制素子

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Country Link
US (2) US6489660B1 (enExample)
EP (1) EP1396027B1 (enExample)
JP (1) JP4685333B2 (enExample)
KR (1) KR100879337B1 (enExample)
CN (1) CN1307723C (enExample)
TW (1) TW546844B (enExample)
WO (1) WO2002095831A1 (enExample)

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US20060216913A1 (en) * 2005-03-25 2006-09-28 Pu-Ju Kung Asymmetric bidirectional transient voltage suppressor and method of forming same
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
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CN101563784B (zh) 2006-06-23 2011-04-20 维谢综合半导体有限责任公司 低正向电压降的瞬态电压抑制器及其制造方法
US7936041B2 (en) * 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
US7538395B2 (en) * 2007-09-21 2009-05-26 Semiconductor Components Industries, L.L.C. Method of forming low capacitance ESD device and structure therefor
US7666751B2 (en) * 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
US20090115018A1 (en) * 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US7842969B2 (en) 2008-07-10 2010-11-30 Semiconductor Components Industries, Llc Low clamp voltage ESD device and method therefor
US7955941B2 (en) * 2008-09-11 2011-06-07 Semiconductor Components Industries, Llc Method of forming an integrated semiconductor device and structure therefor
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device
US8089095B2 (en) 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
US8445917B2 (en) * 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
US8384126B2 (en) 2010-06-22 2013-02-26 Littelfuse, Inc. Low voltage PNPN protection device
US8557654B2 (en) 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
US8530902B2 (en) * 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US9337178B2 (en) 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
US9773777B2 (en) * 2016-01-08 2017-09-26 Texas Instruments Incorporated Low dynamic resistance low capacitance diodes
CN107346736B (zh) * 2016-05-06 2019-11-05 华润微电子（重庆）有限公司 双向瞬态电压抑制二极管及其制作方法
US10014388B1 (en) 2017-01-04 2018-07-03 General Electric Company Transient voltage suppression devices with symmetric breakdown characteristics
US10535648B2 (en) 2017-08-23 2020-01-14 Semiconductor Components Industries, Llc TVS semiconductor device and method therefor
CN108520874B (zh) * 2018-03-28 2021-04-06 南京矽力微电子技术有限公司 半导体器件及其制造方法
CN109449152B (zh) * 2018-10-31 2020-12-22 深圳市巴达木科技有限公司 一种抑制芯片及其制备方法
CN112447821A (zh) * 2019-09-02 2021-03-05 珠海零边界集成电路有限公司 一种终端结构制造方法
CN111564439B (zh) * 2020-05-07 2024-01-23 上海韦尔半导体股份有限公司 一种双向瞬态电压抑制保护器件、制作工艺及电子产品
CN114171385A (zh) * 2022-02-14 2022-03-11 浙江里阳半导体有限公司 一种低压瞬态抑制二极管及其制造方法

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DE19713962C1 (de) * 1997-04-04 1998-07-02 Siemens Ag Leistungsdiode (FCI-Diode)

Also Published As

Publication number Publication date
EP1396027B1 (en) 2012-12-19
US6489660B1 (en) 2002-12-03
US20020175391A1 (en) 2002-11-28
JP2005505913A (ja) 2005-02-24
US20030038340A1 (en) 2003-02-27
TW546844B (en) 2003-08-11
EP1396027A1 (en) 2004-03-10
CN1307723C (zh) 2007-03-28
CN1520614A (zh) 2004-08-11
EP1396027A4 (en) 2008-05-14
KR20040000485A (ko) 2004-01-03
WO2002095831A1 (en) 2002-11-28
KR100879337B1 (ko) 2009-01-19
US6602769B2 (en) 2003-08-05

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