JP2005505913A5 - - Google Patents

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Publication number
JP2005505913A5
JP2005505913A5 JP2002592196A JP2002592196A JP2005505913A5 JP 2005505913 A5 JP2005505913 A5 JP 2005505913A5 JP 2002592196 A JP2002592196 A JP 2002592196A JP 2002592196 A JP2002592196 A JP 2002592196A JP 2005505913 A5 JP2005505913 A5 JP 2005505913A5
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JP
Japan
Prior art keywords
epitaxial layer
semiconductor layer
layer
epitaxial
conductivity type
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Application number
JP2002592196A
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English (en)
Japanese (ja)
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JP4685333B2 (ja
JP2005505913A (ja
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Priority claimed from US09/862,664 external-priority patent/US6489660B1/en
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Publication of JP2005505913A publication Critical patent/JP2005505913A/ja
Publication of JP2005505913A5 publication Critical patent/JP2005505913A5/ja
Application granted granted Critical
Publication of JP4685333B2 publication Critical patent/JP4685333B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002592196A 2001-05-22 2002-05-22 低電圧パンチスルー双方向過渡電圧抑制素子 Expired - Lifetime JP4685333B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/862,664 US6489660B1 (en) 2001-05-22 2001-05-22 Low-voltage punch-through bi-directional transient-voltage suppression devices
PCT/US2002/016241 WO2002095831A1 (en) 2001-05-22 2002-05-22 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same

Publications (3)

Publication Number Publication Date
JP2005505913A JP2005505913A (ja) 2005-02-24
JP2005505913A5 true JP2005505913A5 (enExample) 2006-01-05
JP4685333B2 JP4685333B2 (ja) 2011-05-18

Family

ID=25338998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002592196A Expired - Lifetime JP4685333B2 (ja) 2001-05-22 2002-05-22 低電圧パンチスルー双方向過渡電圧抑制素子

Country Status (7)

Country Link
US (2) US6489660B1 (enExample)
EP (1) EP1396027B1 (enExample)
JP (1) JP4685333B2 (enExample)
KR (1) KR100879337B1 (enExample)
CN (1) CN1307723C (enExample)
TW (1) TW546844B (enExample)
WO (1) WO2002095831A1 (enExample)

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US7244970B2 (en) * 2004-12-22 2007-07-17 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
US20060216913A1 (en) * 2005-03-25 2006-09-28 Pu-Ju Kung Asymmetric bidirectional transient voltage suppressor and method of forming same
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
US7329940B2 (en) * 2005-11-02 2008-02-12 International Business Machines Corporation Semiconductor structure and method of manufacture
CN101563784B (zh) 2006-06-23 2011-04-20 维谢综合半导体有限责任公司 低正向电压降的瞬态电压抑制器及其制造方法
US7936041B2 (en) 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
US7666751B2 (en) * 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
US7538395B2 (en) * 2007-09-21 2009-05-26 Semiconductor Components Industries, L.L.C. Method of forming low capacitance ESD device and structure therefor
US20090115018A1 (en) * 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US7842969B2 (en) 2008-07-10 2010-11-30 Semiconductor Components Industries, Llc Low clamp voltage ESD device and method therefor
US7955941B2 (en) * 2008-09-11 2011-06-07 Semiconductor Components Industries, Llc Method of forming an integrated semiconductor device and structure therefor
US8089095B2 (en) 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device
US8445917B2 (en) 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
US8384126B2 (en) 2010-06-22 2013-02-26 Littelfuse, Inc. Low voltage PNPN protection device
US8557654B2 (en) 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
US8530902B2 (en) * 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US9337178B2 (en) 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
US9773777B2 (en) * 2016-01-08 2017-09-26 Texas Instruments Incorporated Low dynamic resistance low capacitance diodes
CN107346736B (zh) * 2016-05-06 2019-11-05 华润微电子（重庆）有限公司 双向瞬态电压抑制二极管及其制作方法
US10014388B1 (en) * 2017-01-04 2018-07-03 General Electric Company Transient voltage suppression devices with symmetric breakdown characteristics
US10535648B2 (en) 2017-08-23 2020-01-14 Semiconductor Components Industries, Llc TVS semiconductor device and method therefor
CN108520874B (zh) * 2018-03-28 2021-04-06 南京矽力微电子技术有限公司 半导体器件及其制造方法
CN109449152B (zh) * 2018-10-31 2020-12-22 深圳市巴达木科技有限公司 一种抑制芯片及其制备方法
CN112447821A (zh) * 2019-09-02 2021-03-05 珠海零边界集成电路有限公司 一种终端结构制造方法
CN111564439B (zh) * 2020-05-07 2024-01-23 上海韦尔半导体股份有限公司 一种双向瞬态电压抑制保护器件、制作工艺及电子产品
CN114171385A (zh) * 2022-02-14 2022-03-11 浙江里阳半导体有限公司 一种低压瞬态抑制二极管及其制造方法

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