TW539902B - Transparent electrically conductive oxide film having superior fire workability and electronic apparatus using the same - Google Patents

Transparent electrically conductive oxide film having superior fire workability and electronic apparatus using the same Download PDF

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Publication number
TW539902B
TW539902B TW089125385A TW89125385A TW539902B TW 539902 B TW539902 B TW 539902B TW 089125385 A TW089125385 A TW 089125385A TW 89125385 A TW89125385 A TW 89125385A TW 539902 B TW539902 B TW 539902B
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TW
Taiwan
Prior art keywords
tin
zinc
electrically conductive
oxide film
transparent electrically
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Application number
TW089125385A
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English (en)
Inventor
Makoto Sasaki
Gee-Sung Chae
Kazuyuki Arai
Original Assignee
Alps Electric Co Ltd
Lg Philips Lcd Co Ltd
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Application filed by Alps Electric Co Ltd, Lg Philips Lcd Co Ltd filed Critical Alps Electric Co Ltd
Application granted granted Critical
Publication of TW539902B publication Critical patent/TW539902B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C03C17/253—Coating containing SnO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/211—SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/215—In2O3
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/216—ZnO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nonlinear Science (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Description

539902 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍2 含有銦氧化物與錫氧化物及鋅氧化物的複合氧化物所構成 ，鋅對鋅與銦與錫之合計量的原子數率爲1 a t %至1 2 a t %，而錫對鋅的原子數比爲1以上’且錫對鋅與銦與 錫之合計量的原子數率爲2 2 a t %以下。 7 .如申請專利範圍第6項所述之氧化物透明導電膜 形成用靶，其中，鋅對上述鋅與銦與錫之合計量的原子數 率爲2 a t %至1 0 a t%，而錫對上述鋅與銦與錫之合 計量的原子數率爲5 a t %至1 2 a t %。 8 · —種氧化物透明導電膜形成基板之製造方法，其 特徵爲：在基板上，形成由含有銦氧化物與錫氧化物及鋅 氧化物的複合氧化物所構成，且錫對鋅之原子數比爲1以 上的非晶質氧化物透明導電膜；蝕刻處理該非晶質氧化物 透明導電膜而施行圖案化後，再施行熱處理，使上述圖案 化處理後之非晶質氧化物透明導電膜之至少一部分予以結 晶化。 9 . 一種氧化物透明導電膜形成基板之製造方法，其 特徵爲：在基板上’形成中含有姻氧化物與錫氧化物及鋅 氧化物的複合氧化物所構成，且鋅對鋅與銦與錫之合計量 的原子數率爲1 a t %至9 a t %，而錫對鋅的原子數比 爲1以上，且錫對鋅與銦與錫之合計量的原子數率爲2 〇 a t %以下的非晶質氧化物透明導電膜；蝕刻處理該非晶 質氧化物透明導電膜而施行圖案化後，再施行熱處理，& 上述圖案化處理後之非晶質氧化物透明導電膜之至少—部 分予以結晶化。 本ϋ尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） ~ ' --- (請先閲讀背面之注意事 Φ— 項再填· 裝-- :寫本頁) 、1Τ 539902
ABCD 六、申請專利範圍3 1 〇 . —種液晶顯示裝置，屬於在互相對向之一對基 板間夾持液晶的液晶顯示裝置，其特徵爲：在該一對基板 之至少一方的基板上，使用以申請專利範圍第8項記載的 製造方法而得到的氧化物透明導電膜形成基板。 1 1 . 一種液晶顯示裝置，屬於在互相對向之一對基 板間夾持液晶的液晶顯示裝置，其特徵爲：在該一對基板 之至少一方的基板上，使用以申請專利範圍第9項記載的 製造方法而得到的氧化物透明以導電膜形成基板。 (請先閱讀背面之注意事 項再填· :寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐）
TW089125385A 1999-11-26 2000-11-29 Transparent electrically conductive oxide film having superior fire workability and electronic apparatus using the same TW539902B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33686599A JP3961172B2 (ja) 1999-11-26 1999-11-26 酸化物透明導電膜と酸化物透明導電膜形成用ターゲットおよび先の酸化物透明導電膜を備えた基板の製造方法と電子機器および液晶表示装置

Publications (1)

Publication Number Publication Date
TW539902B true TW539902B (en) 2003-07-01

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TW089125385A TW539902B (en) 1999-11-26 2000-11-29 Transparent electrically conductive oxide film having superior fire workability and electronic apparatus using the same

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US (1) US6533965B1 (zh)
JP (1) JP3961172B2 (zh)
KR (1) KR100382809B1 (zh)
TW (1) TW539902B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395254B (zh) * 2006-01-25 2013-05-01 Air Water Inc Film forming device

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DE60041353D1 (de) * 1999-11-25 2009-02-26 Idemitsu Kosan Co Sputtertarget, transparentes konduktives oxid und vorbereitungsverfahren für sputtertarget
JP4002410B2 (ja) * 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
JP2005181670A (ja) * 2003-12-19 2005-07-07 Ulvac Japan Ltd 極薄ｉｔｏ膜の製造方法
US7825021B2 (en) * 2004-01-16 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7662431B2 (en) * 2004-04-23 2010-02-16 Arkema Inc. Method of preparing a tin oxide layer
CN100561605C (zh) * 2005-08-18 2009-11-18 财团法人工业技术研究院 透明导电薄膜结构及其制造方法
WO2007026783A1 (ja) * 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、透明導電膜及び透明電極
JP4804867B2 (ja) * 2005-10-18 2011-11-02 出光興産株式会社 透明導電膜、透明電極、電極基板及びその製造方法
JP4933756B2 (ja) * 2005-09-01 2012-05-16 出光興産株式会社 スパッタリングターゲット
JP4947942B2 (ja) * 2005-09-20 2012-06-06 出光興産株式会社 スパッタリングターゲット
JP4960244B2 (ja) * 2005-09-22 2012-06-27 出光興産株式会社 酸化物材料、及びスパッタリングターゲット
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
CN101313371A (zh) 2005-11-21 2008-11-26 出光兴产株式会社 透明导电膜及使用其的基板、电子器件以及液晶显示装置
JP5000131B2 (ja) * 2005-12-26 2012-08-15 出光興産株式会社 透明電極膜及び電子機器
JP4728170B2 (ja) 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
KR100655855B1 (ko) * 2006-06-26 2006-12-08 오명호 모기살충기
KR100655856B1 (ko) * 2006-06-01 2006-12-08 오명호 모기살충기
JP5000937B2 (ja) 2006-06-30 2012-08-15 三菱電機株式会社 半導体デバイスの製造方法
KR20090075554A (ko) 2008-01-04 2009-07-08 삼성전자주식회사 액정 표시 장치와 그 제조 방법
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WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5689378B2 (ja) * 2011-07-12 2015-03-25 出光興産株式会社 透明導電膜
US10023797B2 (en) 2014-02-17 2018-07-17 Mitsubishi Gas Chemical Company, Inc. Liquid composition for etching oxides comprising indium, zinc, tin, and oxygen and etching method
JP6159867B1 (ja) * 2016-12-22 2017-07-05 Ｊｘ金属株式会社 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法

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JP3947575B2 (ja) * 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
JP3163015B2 (ja) * 1996-09-06 2001-05-08 グンゼ株式会社 透明導電膜

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395254B (zh) * 2006-01-25 2013-05-01 Air Water Inc Film forming device

Also Published As

Publication number Publication date
KR100382809B1 (ko) 2003-05-09
JP2001155549A (ja) 2001-06-08
KR20010061955A (ko) 2001-07-07
US6533965B1 (en) 2003-03-18
JP3961172B2 (ja) 2007-08-22

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