TW529082B - Electron-beam exposure apparatus, electron-beam shaping member, and the manufacturing method of electron-beam shaping member - Google Patents

Electron-beam exposure apparatus, electron-beam shaping member, and the manufacturing method of electron-beam shaping member Download PDF

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Publication number
TW529082B
TW529082B TW91101425A TW91101425A TW529082B TW 529082 B TW529082 B TW 529082B TW 91101425 A TW91101425 A TW 91101425A TW 91101425 A TW91101425 A TW 91101425A TW 529082 B TW529082 B TW 529082B
Authority
TW
Taiwan
Prior art keywords
electron beam
opening
molding
electron
cover member
Prior art date
Application number
TW91101425A
Other languages
English (en)
Chinese (zh)
Inventor
Harunobu Muto
Hiroshi Yano
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Application granted granted Critical
Publication of TW529082B publication Critical patent/TW529082B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
TW91101425A 2001-01-30 2002-01-29 Electron-beam exposure apparatus, electron-beam shaping member, and the manufacturing method of electron-beam shaping member TW529082B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001021490A JP4156808B2 (ja) 2001-01-30 2001-01-30 電子ビーム露光装置、電子ビーム成形部材及びその製造方法

Publications (1)

Publication Number Publication Date
TW529082B true TW529082B (en) 2003-04-21

Family

ID=18887046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91101425A TW529082B (en) 2001-01-30 2002-01-29 Electron-beam exposure apparatus, electron-beam shaping member, and the manufacturing method of electron-beam shaping member

Country Status (3)

Country Link
JP (1) JP4156808B2 (ja)
TW (1) TW529082B (ja)
WO (1) WO2002061813A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8987679B2 (en) 2009-10-09 2015-03-24 Mapper Lithography Ip B.V. Enhanced integrity projection lens assembly
NL2003619C2 (en) * 2009-10-09 2011-04-12 Mapper Lithography Ip Bv Projection lens assembly.
JP5497605B2 (ja) * 2010-09-30 2014-05-21 Ｈｏｙａ株式会社 転写マスク、転写マスクの製造方法、転写マスク収容体、及び転写マスク収容体の製造方法
JP7110831B2 (ja) * 2018-08-29 2022-08-02 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778748A (ja) * 1993-09-09 1995-03-20 Toshiba Corp アパーチャマスク及びその製造方法
JP2000331917A (ja) * 1999-05-21 2000-11-30 Hitachi Ltd 電子ビーム露光マスク、および電子ビーム露光装置
JP2000340486A (ja) * 1999-05-28 2000-12-08 Dainippon Printing Co Ltd 荷電粒子線露光用ステンシルマスク
JP2002075842A (ja) * 2000-08-31 2002-03-15 Nikon Corp 露光装置、散乱マスク、露光方法及び半導体製造装置

Also Published As

Publication number Publication date
JP2002231602A (ja) 2002-08-16
WO2002061813A1 (fr) 2002-08-08
JP4156808B2 (ja) 2008-09-24

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