經濟部智慧財產局員工消費合作社印製 529082 8792pif.doc/008 A7 B7 五、發明說明（ί) 未發明係有關於一種電子束曝光裝置、電子束成型構 件以及其製造方法。而且，本發明係與下述之日本專利相 關。在爹照文獻時請依據指定國家進行參照，且在參照下 述發明中所記載之內容之後，即納入本發明中，爲本發明 之記載的一部份。 特願2001-021490 申請日平成丨3年丨月3〇日 發明背景 習知的電子束曝光裝置（Electron-Beam Exposure Apparatus)係爲具有方框罩幕(Block Mask)之電子束曝光裝 置。上述方框罩幕具有在基材設置對應晶圓上曝光頻率高 的圖案之開口部的結構。 1 習知的電子束曝光裝置所包括之方框罩幕，由於在構 成方框罩幕之基材上設置有複數個開口部，因此在複數個 開口部中之一部份破損之情況下，就必須要更換整個方框 罩幕。 因此，本發明之一目的在於提供一種電子束曝光裝 置、電子束成型構件以及其製造方法，可以解決上述之問 題。藉由組合申請專利範圍內之獨立項所記載之特徵可以 達成上述目的，而且依照附屬項可以規定本發明之較佳實 施例。 f明槪要 爲了達成上述目的，本發明之第一型態爲提供一種電 子束成型構件，其係爲一種使電子束之剖面形狀成型爲所 希望之形狀的成型構件，此成型構件具備有基材、固定於 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） ------------裝--------訂— (請先閱讀背面之注意事項再填寫本頁) 529082 8792pif.doc/008Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 529082 8792pif.doc / 008 A7 B7 V. Description of Invention (ί) The invention does not relate to an electron beam exposure device, an electron beam forming member, and a manufacturing method thereof. The present invention relates to the following Japanese patents. Please refer to the designated country when you take photos of the document, and after referring to the content described in the invention below, it will be incorporated into the present invention and form part of the description of the present invention. Japanese Patent Application No. 2001-021490 Heisei 丨 3 years 丨 January 30, Background of the Invention The conventional electron-beam exposure device (Electron-Beam Exposure Apparatus) is an electron-beam exposure device with a block mask. The frame mask has a structure in which an opening portion corresponding to a pattern having a high exposure frequency on a wafer is provided on a base material. 1 The frame mask included in the conventional electron beam exposure device is provided with a plurality of openings on a base material constituting the frame mask, so that when one of the plurality of openings is damaged, The entire frame mask must be replaced. Therefore, an object of the present invention is to provide an electron beam exposure device, an electron beam forming member, and a method for manufacturing the same, which can solve the above problems. The above-mentioned objects can be achieved by combining the features recorded in the independent items within the scope of the patent application, and according to the subsidiary items, the preferred embodiments of the present invention can be specified. In order to achieve the above object, the first aspect of the present invention is to provide an electron beam forming member, which is a forming member that shapes the cross-sectional shape of the electron beam into a desired shape, and the forming member is provided with a base. Materials, fixed to this paper standard applicable to China National Standard (CNS) A4 (210x297 mm) ------------ installation -------- order— (Please read the back (Please fill in this page again for attention) 529082 8792pif.doc / 008
經濟部智慧財產局員工消費合作社印製 基材上並具有使電子束成型之成型開口部的罩幕牛、@ 置於基材上並使通過成型開口部之電子束通過之通過^$ 部。 而且，罩幕構件較佳是塡入通過開口部中， 是具有突出通過開口部並用以停止罩幕構件之停止t 通過開口部較佳是形成沿著罩幕構件之塡入方 縮小。而且，罩幕構件較佳是能夠從基材上裝卸。 此外，也可以導通罩幕構件與基材，而使罩幕構{牛@ 夠固定於基材上。另外，基材可以具有複數個通過開〇部，b 並於每一個通過開口部設置罩幕構件。 本發明之第二型態爲提供一種電子束曝光裝置， 爲一種藉由電子束在晶圓上曝光出圖案之電子束曝 置，此裝置具備有產生電子束之電子束產生部、使電子束 之剖面形狀成型之成型構件，其特徵在於成型構件具備有 基材、固定於基材上並具有使電子束成型之成型開口部的 罩幕構件、以及在基材上固定罩幕構件之區域中能夠使通 過成型開口部之電子束通過之通過開口部。 而且，電子束產生部可以產生複數個電子束’並於每 一個電子束通過之基材上設置通過開口部與罩幕構件。 本發明之第三型態爲提供一種成型構件之製造方法’ 其係爲一種使電子束之剖面形狀成型爲所希望之形狀的成 型構件之製造方法，此方法包括形成具有使電子束成型之 成型開口部的罩幕構件之製程、形成使在罩幕構件中成型 之電子束通過具有通過開口部之基材的製程、以及固定罩 5 -----------AW1 ^--------訂---I--— (請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） 經濟部智慧財產局員工消費合作杜印製 529082 8792pif.doc/008 A7 B7 五、發明說明（、） 幕構件於基材上之製程。 本發明之摘要並未敘述本發明之所有必要特徵，而本 發明亦可以是如上所述之特徵的組合。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖示簡單說明 第1圖爲繪示本發明一較佳實施例之一種電子束曝光 裝置\_示意圖。 ^爲繪示本發明一較佳實施例之第二成型構件22 之示意匱_^\ _ 第）繪示第二成型構件22中的一種罩幕構件202 之上視 爲繪示本發明一較佳實施例之成型構件之製造 方法形成罩幕構件202之製程示意圖。 第\_^#示一種托架構件200之製程示意圖。 第先圖^繪示另一種托架構件200之製程示意圖 圖號標示說明 8 :筐體 10 :電子槍 14 :第一成型構件 16 :第一多軸電子透鏡 18 :第一成型偏向部 20 :第二成型偏向部 -----------AWI --------訂------ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 529082 8792pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（V) 22 :第二成型構件 24 :第二多軸電子透鏡 26 :匿影電極陣列 28 :電子束遮蔽構件 34 :第三多軸電子透鏡 36 :第四多軸電子透鏡 38 :偏向部 44 :晶圓 46 :晶圓載物台 48 :晶圓載物台驅動部 48的載物台系統。 52 :第五多軸電子透鏡 80 :電子束控制部 82 :多軸電子透鏡控制部 84 :成型偏向控制部 86 :匿影電極陣列控制部 92 :偏向控制部 96 :晶圓載物台控制部 100 :電子束曝光裝置 110 :電子束成型裝置 112 :照射切換裝置 114 :晶圓用投影系統 120 :個別控制部 130 :總括控制部 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 529082 8792pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（κ ) 140 :控制系統 150 :曝光部 200 :托架構件 202 :罩幕構件 204、204a :成型開口部 204b :方框成型開口部 206 :基材 208 :通過開口部 210 :停止部 212 :方框成型開口部區域 300、400 :基底 302、306、402、406、502、506 :矽層 304、308、404、408、504 ··氧化矽層 310、310a、410、410b :氮化矽層 312、412:光阻罩幕 314 :切割開口部 316 :金屬保護膜 420、422 :開口部 508、512 :電鑄基礎膜 51〇、514 :導電性膜 較佳實施例 以下請參照所附圖示，以詳細的說明本發明之實施 例。 第1圖繪示依照本發明一較佳實施例之一種電子束 - - ---I-------裝----！—訂-丨—丨—丨！ - (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 529082 8792pif.doc/008 A7 _________ B7 五、發明說明（〔） 曝光裝置100之結構示意圖。電子束曝光裝置10〇具備有 以電子束對晶圓44實施所定曝光處理的曝光部150，與控 制曝光部150中各個構件之動作的控制系統14〇。 曝光部15〇具備有使筐體8內部產生之複數個電子 束成型爲所要求之電子束剖面形狀的電子束成型裝置 11 〇、對於各電子束獨立變換，以決定是否將複數個電子 束照射在晶圓44上的照射切換裝置112、以及調整晶圓44 上所複製之圖案（Pattern)的方向及尺寸之包含晶圓用投影 系統114的電子光學系統。而曝光部150則具備有放置欲 曝光圖案之晶圓44的晶圓載物台46與驅動晶圓載物台46 之晶圓載物台驅動部48的載物台系統。 電子束成型手段110具備有可產生複數個電子束之複 數個電子槍10、藉由使電子束通過並使照射之電子束的剖 面形狀成型之具有數個開口部的第一成型構件14與第二 成型構件22、可各自獨立聚焦複數個電子束並調整複數個 電子束焦點的第一多軸電子透鏡16、使通過第一成型構件 I4的複數個電子束獨立偏向的第一成型偏向部18以及第 二成型偏向部20。 照射切換裝置112具備有獨立聚焦複數個電子束並調 整複數個電子束焦點的第二多軸電子透鏡24、藉由使複數 個電子束各自獨立偏向，以決定是否將各電子束照射在晶 圓44上，並對各個電子束獨立變換的匿影(Blanking)電極 陣列26、具有讓複數個電子束通過的開口部，以遮蔽在匿 影電極陣列26中偏向之電子束的電子束遮蔽構件28。在 9 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐) -----------Φ S--------訂---------^11^1 (請先閱讀背面之注意事項再填寫本頁) 529082 8792pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（9 ) 其它實施例中，匿影電極陣列26也可使用匿影•小孔 (Aperture) ·陣列（Array) ·元件(Device)。 晶圓用投影系統114具備有將複數個電子束各自獨立 聚焦並縮小電子束之照射徑的第三多軸電子透鏡34、將複 數個電子束各自獨立聚焦並調整複數個電子束焦點的第四 多軸電子透鏡36、將複數個電子束獨立偏向在晶圓44所 要之位置上的偏向部38、對於晶圓44具有對物透鏡的機 能並將複數個電子束各自獨立聚焦的第五多軸電子透鏡 52 ° 控制系統140具備有總括控制部130與個別控制部 120。個別控制部120具備有電子束控制部80、多軸電子 透鏡控制部82、成型偏向控制部84、匿影電極陣列控制 部86、偏向控制部92與晶圓載物台控制部96。總括控制 部130例如是工作站(work station)，總括控制個別控制部 120所包含的各個控制部。電子束控制部控制80控制電子 槍10。多軸電子透鏡控制部82則控制供應至第一多軸電 子透鏡16、第二多軸電子透鏡24、第三多軸電子透鏡34、 第四多軸電子透鏡36、以及第五多軸電子透鏡52的電流。 成型偏向控制部84則控制第一成型偏向控制部18 與第二成型偏向控制部20。匿影電極陣列控制部86控制 對包含在匿影電極陣列26上之偏向電極所施加的電壓。 偏向控制邰92則控制包含在偏向部38之具有複數個偏向 器的偏向電極所施加的電壓。晶圓載物台控制部96是用 來控制晶圓載物台驅動部48，使晶圓載物台46移動至所 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------^--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 529082 8792pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2 ) 定的位置。 接著說明與本實施例有關之電子束曝光裝置100的 動作。首先利用複數個電子槍產生複數個電子束。第一成 型構件14使經由複數個電子槍10所產生之電子束，讓照 射在第一成型構件14的複數個電子束通過設置在第一成 型構件14上的數個開口部而成型。在其它的例子中，也 可以藉由使在電子槍10所產生的電子束分割成數個電子 束之裝置，以產生複數個電子束。 第一多軸電子透鏡16則將成型爲矩形的複數個電子 束獨立聚焦，以獨立調整每個電子束對應於第二成型構件 22之電子束的焦點。第一成型偏向部18將在第一成型構 件14上成型爲矩形的複數個電子束照射在第二成型構件 上所需要的位置，並各自獨立偏向。 第二成型偏向部20使在第一成型偏向部18偏向的 複數個電子束各自往對應第二成型構件22之略垂直方向 偏向，並照射在第二成型構件22上。然後包含數個具有 矩形狀開口部的第二成型構件22則將照射在第二成型構 件22上之具有矩形剖面的複數個電子束，再照射於晶圓44 上而形成具有所希望之剖面形狀的電子束。 第二多軸電子透鏡24獨立聚焦複數個電子束，並各 自獨立調整對應於匿影電極陣列26之電子束的焦點。然 後’以經過第二多軸電子透鏡24各自調整焦點的複數個 電子束通過位於匿影電極陣列26的數個小孔。 匿影電極陣列控制部86是用來控制是否對設置於匿 11 本紙張尺料 ⑵Q X 297Ti) (請先閱讀背面之注意事項再填寫本頁)Printed on the substrate by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and having a molding opening for shaping the electron beam, the @ is placed on the substrate and the electron beam passing through the molding opening passes through the ^ $ section. Further, the cover member is preferably inserted into the passage opening portion, and has a stopper protruding through the opening portion to stop the cover member t. The passage opening portion is preferably formed to be reduced in size along the insertion direction of the cover member. The cover member is preferably attachable to and detachable from the substrate. In addition, the cover member and the substrate can also be connected, so that the cover member {牛 @ can be fixed on the substrate. In addition, the substrate may have a plurality of passage opening portions, b, and a cover member may be provided at each of the passage opening portions. A second aspect of the present invention is to provide an electron beam exposure device, which is an electron beam exposure method in which a pattern is exposed on a wafer by an electron beam. The device is provided with an electron beam generating unit for generating an electron beam, and an electron beam. The molding member having a cross-sectional shape is characterized in that the molding member includes a base material, a cover member fixed to the base material and having a molding opening for forming an electron beam, and a region where the cover member is fixed on the base material. The electron beam passing through the molding opening can pass through the opening. Further, the electron beam generating section may generate a plurality of electron beams', and a passing opening and a cover member may be provided on a base material through which each electron beam passes. A third aspect of the present invention is to provide a method of manufacturing a molded member. The method is a method of manufacturing a molded member that shapes the cross-sectional shape of an electron beam into a desired shape. The method includes forming a molding having a shape of the electron beam. Process of forming a cover member of an opening portion, forming a process of passing an electron beam molded in the cover member through a substrate having passed through the opening portion, and fixing the cover 5 ----------- AW1 ^- ------ Order --- I --- (Please read the notes on the back before filling out this page} This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) Intellectual property of the Ministry of Economic Affairs Bureau's Consumer Cooperation Du printed 529082 8792pif.doc / 008 A7 B7 V. Description of the invention (,) The process of the curtain member on the substrate. The abstract of the invention does not describe all necessary features of the invention, and the invention can also It is a combination of the features described above. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail with the accompanying drawings, as follows: The illustration briefly shows that the first picture is A schematic diagram of an electron beam exposure device according to a preferred embodiment of the present invention is shown. ^ Is a schematic diagram illustrating the second forming member 22 of a preferred embodiment of the present invention. ^^) The second forming member is shown A mask member 202 in FIG. 22 is regarded as a schematic diagram of a manufacturing process for forming the mask member 202 by a manufacturing method of a molding member according to a preferred embodiment of the present invention. The \ _ ^ # shows a schematic process diagram of a bracket member 200. The first figure ^ shows a schematic diagram of the manufacturing process of another bracket member 200. The drawing number indicates the description 8: the casing 10: the electron gun 14: the first molding member 16: the first multi-axis electronic lens 18: the first molding deflection portion 20: the first Second Forming Deviation Department ----------- AWI -------- Order ------ (Please read the precautions on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm) 529082 8792pif.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (V) 22: Second molding member 24: Second multi-axis Electron lens 26: Mask electrode array 28: Electron beam shielding member 34: Third multi-axis electron lens 36: Fourth multi-axis electron lens 38: Deflection portion 44: Wafer 46: Wafer stage 48: Wafer stage Stage system of the drive unit 48. 52: the fifth multi-axis electronic lens 80: the electron beam control unit 82: the multi-axis electronic lens control unit 84: the molding deflection control unit 86: the shadow electrode array control unit 92: the deflection control unit 96: the wafer stage control unit 100 : Electron beam exposure device 110: Electron beam forming device 112: Irradiation switching device 114: Wafer projection system 120: Individual control unit 130: General control unit (Please read the precautions on the back before filling out this page) This paper size applies China National Standard (CNS) A4 specification (210 x 297 mm) 529082 8792pif.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (κ) 140: Control System 150: Exposure Department 200: Bracket member 202: curtain member 204, 204a: molding opening 204b: frame molding opening 206: base material 208: through opening 210: stopper 212: frame molding opening area 300, 400: base 302, 306, 402, 406, 502, 506: Silicon layers 304, 308, 404, 408, 504 ... Silicon oxide layers 310, 310a, 410, 410b: Silicon nitride layers 312, 412: Photoresist masks 314: Cutting openings Section 316: Metal protective film 420, 422: On Ports 508, 512: Electroformed base film 51, 514: Conductive film. Preferred embodiments Please refer to the attached drawings to explain the embodiments of the present invention in detail. FIG. 1 illustrates an electron beam according to a preferred embodiment of the present invention. —Order- 丨 — 丨 — 丨! -(Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 529082 8792pif.doc / 008 A7 _________ B7 V. Description of the Invention ([) Schematic diagram of the structure of the exposure device 100. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 with an electron beam, and a control system 14 that controls the operation of each component in the exposure unit 150. The exposure unit 15 is provided with an electron beam forming device 11 that shapes a plurality of electron beams generated inside the housing 8 into a desired electron beam cross-sectional shape. The electron beams are independently converted to determine whether to irradiate the plurality of electron beams. An irradiation switching device 112 on the wafer 44 and an electro-optical system including a projection system 114 for the wafer that adjusts the direction and size of a pattern copied on the wafer 44. The exposure unit 150 includes a wafer stage 46 on which the wafer 44 to be exposed is patterned, and a stage system that drives the wafer stage driving unit 48 of the wafer stage 46. The electron beam forming means 110 includes a plurality of electron guns 10 capable of generating a plurality of electron beams, a first molding member 14 having a plurality of openings, and a second molding member formed by passing an electron beam and forming a cross-sectional shape of the irradiated electron beam. A molding member 22, a first multi-axis electron lens 16 that can independently focus the plurality of electron beams and adjust the focus of the plurality of electron beams, a first molding deflection portion 18 that independently biases the plurality of electron beams passing through the first molding member I4, and Second molding deflection section 20. The irradiation switching device 112 includes a second multi-axis electron lens 24 that independently focuses the plurality of electron beams and adjusts the focus of the plurality of electron beams. The plurality of electron beams are individually deflected to determine whether to irradiate the electron beams on the wafer. 44, a blanking electrode array 26 that independently transforms each electron beam, and an electron beam shielding member 28 having an opening portion through which a plurality of electron beams pass to shield the electron beams deflected in the shadow electrode array 26 . Applicable to China Paper Standard (CNS) A4 (21〇X 297mm) in 9 paper sizes ----------- Φ S -------- Order ------ --- ^ 11 ^ 1 (Please read the notes on the back before filling in this page) 529082 8792pif.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (9) In other embodiments, The shadow electrode array 26 may use a shadow, an aperture, an array, and a device. The wafer projection system 114 includes a third multi-axis electron lens 34 that focuses the plurality of electron beams independently and reduces the irradiation diameter of the electron beam, and a fourth that independently focuses the plurality of electron beams and adjusts the focus of the plurality of electron beams. A multi-axis electron lens 36, a deflection section 38 that independently biases a plurality of electron beams at a desired position on the wafer 44, a fifth multi-axis having a function of an objective lens for the wafer 44 and focusing the plurality of electron beams independently of each other The electronic lens 52 ° control system 140 includes an overall control unit 130 and an individual control unit 120. The individual control section 120 includes an electron beam control section 80, a multi-axis electronic lens control section 82, a molding deflection control section 84, a shadow electrode array control section 86, a deflection control section 92, and a wafer stage control section 96. The collective control unit 130 is, for example, a work station, and collectively controls each control unit included in the individual control unit 120. The electron beam control unit controls 80 to control the electron gun 10. The multi-axis electronic lens control unit 82 controls the supply to the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis electronic lens. 52 current. The molding deflection control unit 84 controls the first molding deflection control unit 18 and the second molding deflection control unit 20. The shadow electrode array control unit 86 controls the voltage applied to the bias electrode included in the shadow electrode array 26. The deflection control 邰 92 controls the voltage applied to the deflection electrode having a plurality of deflectors included in the deflection section 38. The wafer stage control unit 96 is used to control the wafer stage driving unit 48 so that the wafer stage 46 is moved to all 10 paper sizes. The Chinese paper standard (CNS) A4 (210 X 297 mm) is applicable- --------- ^ -------- Order --------- (Please read the notes on the back before filling this page) 529082 8792pif.doc / 008 A7 B7 Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives V. Invention Description (2). Next, the operation of the electron beam exposure apparatus 100 according to this embodiment will be described. First, a plurality of electron beams are generated by using a plurality of electron guns. The first molding member 14 is configured to shape the electron beams generated by the plurality of electron guns 10 so that the plurality of electron beams irradiated on the first molding member 14 pass through a plurality of openings provided in the first molding member 14. In other examples, a device for dividing the electron beam generated by the electron gun 10 into a plurality of electron beams may be used to generate a plurality of electron beams. The first multi-axis electron lens 16 focuses the plurality of electron beams formed into a rectangle independently, so as to independently adjust the focus of each electron beam corresponding to the electron beam of the second molding member 22. The first molding deflection portion 18 irradiates a plurality of electron beams formed into a rectangular shape on the first molding member 14 at positions required on the second molding member, and deflects them independently. The second molding deflection portion 20 deflects the plurality of electron beams deflected in the first molding deflection portion 18 in a direction slightly corresponding to the second molding member 22, and irradiates the second molding member 22. Then, the second molding member 22 including a plurality of rectangular openings is irradiated on the second molding member 22 with a plurality of electron beams having a rectangular cross-section, and then irradiates the wafer 44 to form a desired cross-sectional shape. Electron beam. The second multi-axis electron lens 24 independently focuses a plurality of electron beams, and independently adjusts the focus of the electron beams corresponding to the shadow electrode array 26. Then, a plurality of electron beams whose respective focal points are adjusted through the second multi-axis electron lens 24 pass through a plurality of small holes located in the shadow electrode array 26. The hidden electrode array control unit 86 is used to control whether or not to set up the 11 paper ruler (Q X 297Ti) (Please read the precautions on the back before filling this page)
裝 -----II 訂·！I # 529082 A7 B7 8792pif.doc/008 五、發明說明（θ ) 影電極陣列26內各小孔附近的偏向電極施與電壓。匿影 電極陣列26則根據施加在偏向電極的電壓切換是否讓電 子束照射在晶圓44上。 (請先閱讀背面之注意事項再填寫本頁) 通過匿影電極陣列2 6而沒偏向的電子束會通過第二 多軸電子透鏡34。然後，第三多軸電子透鏡34會縮小通 過第三多軸電子透鏡34之電子束的內徑。縮小後之電子 束則通過位於電子束遮蔽構件28上的開口部。而且，電 子束遮蔽構件28可遮蔽經由匿影電極陣列26偏向的電子 束。通過電子束遮蔽構件28的電子束則射入第四多軸電 子透鏡36。然後，第四多軸電子透鏡36則各自獨立聚焦 所射入的電子束，並各自調整對應於偏向部38之電子束 的焦點。經過第四多軸電子透鏡36調整焦點的電子束會 射入至偏向部3 8。 - 偏向部38中所包含的複數個偏向器根據來自偏向控 制部92之指令，將射入偏向部38的各個電子束各自獨立 偏向至應照射於晶圓44上的位置。第五多軸電子透鏡52 則用來調整通過第五多軸電子透鏡52之各電子束對應晶 圓44的焦點。然後，使欲照射於晶圓44上之具有剖面形 狀的各電子束照射在希望照射的晶圓位置上。 經濟部智慧財產局員工消費合作社印製 在曝光處理中，晶圓載物台驅動部48較佳是根據來 自晶圓載物台控制部96的指示，使晶圓載物台46往一定 的方向移動。然後，配合晶圓44的移動，將電子束的剖 面形狀在晶圓44上形成應照射的形狀，以決定讓應照射 在晶圓44上之電子束通過的小孔，然後再利用偏向部38 12 本^氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) 2 8 ο 9 2 經濟部智慧財產局員工消費合作社印製 8792pif.doc/008 發明說明（（U ) ik各個電子束偏向至晶圓上應照射的位置，如此就可以在 晶圓上對所想要的圖案進行曝光。 第2圖所繪示爲關於本發明之一實施例之第二成型構 件22之示意圖。第2A圖爲繪示第二成型構件22之上視 圖。第二成型構件22是由具有使照射之電子束成型爲所 希望形狀之成型開口部204之複數個罩幕構件202、與固 定罩幕構件202之托架構件200所構成。 第2B圖爲繪示第2A圖中第二成型構件22之AA’剖 面圖。托架構件200具備有基材206、與設置於基材206 上並使通過成型開口部204之電子束通過之複數個通過開 口部208。罩幕構件202較佳是設置成能夠塡入托架構件 202所設置之通過開口部208內。而且，通過開口部208 較佳是形成沿著罩幕構件202塡入通過開口部208之方向 逐漸縮小。此時，通過開口部208較佳是對應罩幕構件202 塡入通過開口部208之方向與沿著罩幕構件2〇8塡入通過 開口部208之方向所夾的角度和罩幕構件2〇2之側面的罩 幕構件202塡入通過開口部208之方向的角度實質上相 等。此外，托架構件200較佳是設置有突出通過開口部208 並用以停止罩幕構件202之停止部210。而且，罩幕構件 202可以塡入通過開口部208而使罩幕構件202與托架構 件200略同一平面。當然，罩幕構件202也可以設置成使 罩幕構件208從托架構件200突出，或者使托架構件200 從罩幕構件200突出。 藉由使通過開口部208形成沿著罩幕構件202塡入通 13 --— — — — — — — — --— — — — — — ^* — — — — — 1 — (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇x四7公t ) 529082 8792pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（M) 過開口部208之方向逐漸縮小，可以對應托架構件200中 所設定之罩幕構件202之位置，而精準的固定罩幕構件 202。而且可以大幅度的降低通過開口部208內部之罩幕 構件202的偏移。另外，托架構件200藉由具有停止部210， 使得通過開口部208在罩幕構件202沒有沿著罩幕構件202 塡入通過開口部208之方向逐漸縮小的情況下，也可以容 易的停止罩幕構件。 罩幕構件202較佳是設計成能夠從托架構件200上裝 卸。此時，罩幕構件202與托架構件200較佳是在罩幕構 件202與托架構件200之接觸部分的至少一部份具有導電 性膜，使罩幕構件202對應於托架構件200而導通罩幕構 件202與托架構件200。在本實施例中，罩幕構件202與 托架構件2〇0之表面例如是具有白金等導電性膜，藉由使 用例如晶片接合(Die Bonding)技術接合罩幕構件202與托 架構件200，使罩幕構件202與托架構件200導通，並將 罩幕構件202固定於托架構件200上。另外，托架構件200 較佳是可以接地線。在其他實例中，罩幕構件202也可以 利用螺絲等固定於托架構件200上。 由於罩幕構件202能夠從托架構件200上裝卸，因此 可以對設置於托架構件200上之罩幕構件202進行更換。 而且，罩幕構件202與托架構件200是導通的，藉由使罩 幕構件202固定於托架構件200上可以有效率的放掉在罩 幕構件2〇2中所遮蔽的電子束。而且，形成基材206之材 料的熱傳導率較形成罩幕構件202之材料的熱傳導率高。 14 (請先閱讀背面之注意事項再填寫本頁) 裝Install ----- II Order! I # 529082 A7 B7 8792pif.doc / 008 V. Description of the Invention (θ) The bias electrode near the small holes in the shadow electrode array 26 applies a voltage. The shadow electrode array 26 switches whether or not the electron beam is irradiated on the wafer 44 according to the voltage applied to the bias electrode. (Please read the precautions on the back before filling this page.) The unbiased electron beam passing through the shadow electrode array 26 passes through the second multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the inner diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam passes through an opening in the electron beam shielding member 28. Further, the electron beam shielding member 28 can shield the electron beam deflected via the shadow electrode array 26. The electron beam passing through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lenses 36 independently focus the incident electron beams, and adjust the focal points of the electron beams corresponding to the deflection portions 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 is incident on the deflection portion 38. -The plurality of deflectors included in the deflection unit 38 deflects each electron beam incident on the deflection unit 38 independently to a position to be irradiated on the wafer 44 according to a command from the deflection control unit 92. The fifth multi-axis electron lens 52 is used to adjust the focal point of the crystal circle 44 corresponding to each electron beam passing through the fifth multi-axis electron lens 52. Then, each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated on the wafer position to be irradiated. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs During the exposure process, the wafer stage driving unit 48 preferably moves the wafer stage 46 in a certain direction according to an instruction from the wafer stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated on the wafer 44 to determine a small hole through which the electron beam to be irradiated on the wafer 44 passes, and then the deflection portion 38 is used. 12 This scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 2 8 ο 9 2 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8792pif.doc / 008 Description of the invention ((U) ik each The electron beam is deflected to the position to be irradiated on the wafer, so that a desired pattern can be exposed on the wafer. FIG. 2 is a schematic diagram of a second molding member 22 according to an embodiment of the present invention. Fig. 2A is a top view showing a second molding member 22. The second molding member 22 is a plurality of cover members 202 and a fixed cover, which are provided with a molding opening 204 that shapes an irradiated electron beam into a desired shape. The curtain member 202 is composed of a bracket member 200. FIG. 2B is a cross-sectional view taken along the line AA ′ of the second molding member 22 in FIG. 2A. The bracket member 200 includes a base material 206 and a base member 206 provided on the base material 206. Pass the electron beam passing through the molding opening 204 The plurality of passage openings 208. The cover member 202 is preferably provided to be able to penetrate into the passage opening 208 provided in the bracket member 202. Further, the passage opening 208 is preferably formed to be inserted along the cover member 202. The direction passing through the opening portion 208 is gradually reduced. At this time, the passing opening portion 208 preferably corresponds to the direction in which the cover member 202 is inserted through the opening portion 208 and the direction along which the cover member 208 is inserted into the opening portion 208. The angle of the clip is substantially equal to the angle of the direction in which the cover member 202 in the side of the cover member 202 penetrates through the opening portion 208. In addition, the bracket member 200 is preferably provided with a protrusion through the opening portion 208 and used to stop The stopper 210 of the cover member 202. Also, the cover member 202 can be inserted through the opening 208 to make the cover member 202 and the bracket member 200 approximately the same plane. Of course, the cover member 202 can also be provided to make the cover The member 208 protrudes from the bracket member 200 or causes the bracket member 200 to protrude from the cover member 200. The through member 208 is formed to penetrate through the cover member 202 along the cover member 202 13 --------- ---- — — — — ^ * — — — — — 1 — (Please read the notes on the back before filling out this page) This paper size is applicable to the Chinese National Standard (CNS) A4 (21〇x4 7mm t) 529082 8792pif. doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (M) The direction through the opening 208 is gradually reduced, which can correspond to the position of the cover member 202 set in the bracket member 200, and is accurate. Fixed cover screen member 202. Furthermore, the displacement of the mask member 202 passing through the opening 208 can be greatly reduced. In addition, the bracket member 200 has a stop portion 210 so that the cover can be easily stopped by the opening portion 208 even when the cover member 202 is not gradually narrowed along the direction in which the cover member 202 is inserted into the opening portion 208. Curtain component. The cover member 202 is preferably designed to be detachable from the bracket member 200. At this time, the cover member 202 and the bracket member 200 preferably have a conductive film on at least a part of the contact portion between the cover member 202 and the bracket member 200 so that the cover member 202 corresponds to the bracket member 200 and The cover curtain member 202 and the bracket member 200 are communicated with each other. In this embodiment, the surface of the cover member 202 and the bracket member 200 is, for example, a conductive film having platinum or the like, and the cover member 202 and the bracket member 200 are bonded by using, for example, a die bonding technique. The cover member 202 and the bracket member 200 are conducted, and the cover member 202 is fixed to the bracket member 200. The bracket member 200 is preferably groundable. In another example, the cover member 202 may be fixed to the bracket member 200 using screws or the like. Since the cover member 202 can be attached to and detached from the bracket member 200, the cover member 202 provided on the bracket member 200 can be replaced. Furthermore, the cover member 202 and the bracket member 200 are electrically connected, and by fixing the cover member 202 to the bracket member 200, the electron beam shielded by the cover member 202 can be efficiently released. Further, the thermal conductivity of the material forming the base material 206 is higher than that of the material forming the mask member 202. 14 (Please read the notes on the back before filling this page)
• _1 mmmt ϋ n ϋ · tmmm ammmm n ϋ «ϋ I em§ I 本紙張尺度適用中國國家標準（CNS)A4 規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 529082 8792pif.doc/008 A7 B7 五、發明說明（π) 而且，在使用具有固定尺寸之晶圓形成的托架構件 200，並使用小於具有上述固定尺寸之晶圓形成罩幕構件 202的情況下，也可以形成使電子束成型爲所希望之形狀 之成型構件。舉例來說，可以使用直徑300mm之矽晶圓 形成托架構件200，並且使用直徑200mm之矽晶圓形成罩 幕構件202。此時，由於可以在矽晶圓上選擇所形成之罩 幕構件之良品或不良品並塡入托架構件200中，因此即使 在設置於罩幕構件202上之開口部非常微小之情況下，也 可以大幅提昇成型構件之良率。此外，由於罩幕構件202 是使用較成型構件尺寸小之晶圓形成的，即使在成型構件 尺寸例如是300mm以上之大直徑的情況下，也可以利用 已經設立之製造裝置製作罩幕構件，而能夠大幅降低成型 構件之製造成本。 如第2C圖所示，罩幕構件202也可以固定於基材206 之表面。此時，罩幕構件202是希望設置於基材206中並 對應電子束之照射方向而具有略垂直的面。而且，罩幕構 件202較佳是可以藉由螺絲或晶片貼合而設計成能夠從基 材206上裝卸。 第3圖爲繪示第二成型構件22中罩幕構件202之一 例上視圖。如第3A圖所示罩幕構件202設置有作爲如第 1圖說明之具有矩形形狀之成型開口部204的矩形成型開 口部2(Ma以及作爲設置具有與成型開口部204a不同形狀 之方框成型開口部的區域之複數個方框成型開口部區域 212。在較佳的情況下，方框成型開口部區域212的尺寸 15 本&張尺度適用中國國家標準（CNS)A4規格（2ι〇 χ四7公餐^ ' -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 529082 A7 B7 8792pif.doc/008 五、發明說明（h) ί系小於或等於通過第一成型構件14後之電子束的最大尺 寸。另外，方框成型開口部區域212的形狀係與通過第一 成型構件14後之電子束的剖面形狀一樣或類似。 (請先閱讀背面之注意事項再填寫本頁) 第3Β圖、第3C圖、第3D圖及第3Ε圖繪示依照本 發明較佳實施例之設置於方框成型開口部區域212中作爲 成型開口部之方框成型開口部204b之一例示意圖。如第3Β 圖、第3C圖所示，方框成型開口部204b例如是設置於晶 圓上用以電性連接導線與電晶體之接觸窗開口、或者用以 電性連接導線之間的貫通孔等，並以一定間隔或一定週期 設置爲了曝光之具有孔洞形狀的開口部。如第3D圖、第 3E圖所示，方框成型開口部204b也可以例如是爲了曝光 出具有電晶體之閘極或導線等而以一定間隔或一定週期設 置具有直線•與•空間圖案之開口部。然後，在第一成型 構件14中各自成型之電子束藉由全面射向各自對應之具 有罩幕構件202的方框開口部區域212，如此電子束在各 自通過方框開口部區域212之複數個方框成型開口部204b 後，電子束會形成圖案化的形態而照射在晶圓44所希望 之區域。 經濟部智慧財產局員工消費合作社印製 第4圖所繪示爲關於本發明之一實施例之成型構件之 製造方法的製程中形成罩幕構件202之流程示意圖。首先 提供一基底300，此基底300具備有矽層302、設置於矽 層302上之氧化矽層304以及設置於氧化矽層304上之矽 層306。在本實施例中基底300係爲絕緣層上有矽（Silicon On Insulator)基底。然後在矽層306上形成一層氧化矽層 16 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 529082 A7 B7 8792pif.doc/008 五、發明說明（卜） 308，形成氧化矽層308之方法例如是化學氣相沈積法 (Chemical vapor Deposition，CVD)。接著在氧化砍層 308 與矽層302上形成一層氮化矽層310，形成氮化矽層310 之方法例如是化學氣相沈積法。 第4B圖所繪示爲在氮化矽層310a與矽層302形成開 口部之製程。首先，在氮化矽層310a塗佈一層光阻層， 經過曝光及顯影處理後，在氮化矽層310a上形成具有設 定圖案之光阻層罩幕。上述之設定圖案較佳是具有在設置 成型開口部204的區域中形成開口部之圖案。而且，上述 之設定圖案較佳是具有在後述之基底300切割製程中，在 切割基底300之區域中形成開口部之圖案。接著以形成之 光阻罩幕爲罩幕’触刻氮化砂層3 10a，触刻氮化砂層3 1 〇a 之方法例如是乾式蝕刻法。然後，除去上述光阻罩幕後， 以蝕刻後之氮化矽層310a爲罩幕，藉由蝕刻矽層302而 於矽層3〇2中之基底3〇〇欲設置成型開口部之區域中形成 開口部，並於矽層302中形成作爲切割基底300之開口部 的切割開口部314。此時，矽層302較佳是使用例如氫氧 化鉀進行非等向性之濕式蝕刻。而且，矽層302經過非等 向性蝕刻之面以及矽層302與氧化矽層304接觸面之對應 角度較佳是藉由蝕刻矽層302使其角度與第2圖之托架構 件2 0 0所设置之通過開口部2 0 8之側面角度實質上相等。 之後5移除氮化矽層310。 第4C圖所繪示爲形成成型開口部2〇4之製程示意圖， 首先，於氧化矽層308上塗佈一層光阻層，經過曝光及顯 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） -----------·裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 529082 8792pifdoc/008 A7 ___ B7 五、發明說明（I 4) (請先閱讀背面之注意事項再填寫本頁) 影處理後5而形成光阻罩幕312。接著，接著以形成之光 阻罩幕3 12爲罩幕’触刻氧化砂層3 18，触刻氧化砂層3 1 $ 之方法例如是乾式蝕刻法。然後，蝕刻矽層306以形成成 型開口部204，蝕刻矽層306之方法例如是乾式蝕刻法。 此時，也可以在蝕刻氧化矽層308之後，除去上述光阻罩 幕312，再以蝕刻後之氧化矽層308爲罩幕蝕刻矽層302。 接者§靑爹照弟4D圖，移除光阻罩幕3 12、氧化砂層3 0 8 以及暴露出的氧化矽層304。然後，藉由設置於基底300 之切割開口部314切割基底300，而得到由罩幕構件202 之基體所組成之複數個構件。然後，藉由使用例如是濺鍍 法等而於上述構件之表面沈積例如是白金等不易氧化之金 屬材料以形成金屬保護膜316而得到罩幕構件。上述金屬 材料較佳是具有非磁性與高熔點之貴金屬。金屬保護膜316 較佳是形成於上述構件之至少電子束之照射部位或電子束 通過之表面，當然更佳是於整個構件之表面都形成金屬保 護膜316。 經濟部智慧財產局員工消費合作社印製 第5圖所繪示爲形成托架構件之製程的一例示意圖。 首先提供一基底400，此基底400具備有矽層4〇2、設置 於矽層402上之氧化矽層404以及設置於氧化矽層4〇4上 之矽層406。在本實施例中基底400係爲絕緣層上有矽基 底。然後如第5A圖所示在矽層402上形成一層氧化矽層 408，形成氧化矽層408之方法例如是化學氣相沈積法。 接著在矽層406與氧化矽層408上形成一層氮化矽層41〇 ’ 形成氮化矽層410之方法例如是化學氣相沈積法。 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 529082 A7 8792pif.doc/008 五、發明說明（Κ ) 第5B圖、第5C圖與第5D圖爲繪示藉由在矽層402 (請先閱讀背面之注意事項再填寫本頁) 及矽層406形成開口部以形成通過開口部208之製程。首 先，在氮化矽層410b塗佈一層光阻層，經過曝光及顯影 處理後形成光阻罩幕。接著以光阻罩幕爲罩幕，蝕刻氮化 矽層410b，蝕刻氮化矽層410b之方法例如是乾式蝕刻法。 然後，除去上述光阻罩幕後，利用經蝕刻後之氮化矽層410b 爲罩幕，藉由蝕刻矽層406而形成開口部420。此時，矽 層406較佳是使用例如氫氧化鉀進行非等向性之濕式蝕 刻。而且，矽層406經過非等向性蝕刻之面以及矽層406 與氧化矽層404接觸面之對應角度較佳是使其角度與第4B 圖所示於矽層302形成開口部之製程中所形成之切割開口 部314之矽層302與氧化矽層304之接觸面所對應的角度 實質上相等。 經濟部智慧財產局員工消費合作社印製 接著，請參照第5C圖，移除氮化砂層410。之後， 於氧化矽層408上塗佈一層光阻層，經過曝光及顯影處理 後’而形成光阻罩幕412。接著，接著以形成之光阻罩幕 412爲罩幕，蝕刻氧化矽層408，蝕刻氧化矽層408之方 法例如是乾式蝕刻法。然後，蝕刻矽層402以形成開口部 422 ’蝕刻矽層4〇2之方法例如是乾式蝕刻法。此時，也 可以在蝕刻氧化矽層408之後，除去上述光阻罩幕412， 再以蝕刻後之氧化矽層408爲罩幕蝕刻矽層402。而且， 開□部422之開口內徑較佳是小於開口部420之開口內 徑。接著請參照第5D圖，藉由移除光阻罩幕412、氧化 石夕層408以及暴露出的氧化矽層404，以形成通過開口部 19 本紙張尺度顧+W?i^^_NS)A4規格⑵0 x 297公髮) 經濟部智慧財產局員工消費合作社印製 529082 8792pif.d〇c/008 A7 ---- B7 五、發明說Π) 208與停止部210。然後，如第5E圖所示，藉由使用例如 是濺鍍法等而於表面沈積例如是白金等不易氧化之金屬材 料以形成金屬保護膜316而得到托架構件200。 第6圖所繪示爲形成托架構件200之製程的另一例示 意圖。利用與第5A圖至第5D圖相同之製程，於具備有 砂層502、設置於矽層502上之氧化矽層504以及設置於 氧化矽層5〇4上之矽層5〇6的基底500上進行加工。在第 5B圖所示之氮化矽層41〇b之蝕刻製程中，較佳是使用氮 化砂層410b上形成之光阻罩幕所具有的圖案與具有略反 轉圖案之光阻罩幕蝕刻形成於矽層上之氮化矽層（未圖 示），再以經蝕刻後之上述氮化矽層爲罩幕蝕刻矽層506。 接著，請參照第6B圖，在以第6A圖中經過加工之 砂基底500上利用下述之電鑄形成導電性膜之製程中，形 成由電鑄之基礎膜所組成之電鑄基礎膜508。電鑄基礎膜 5〇8例如是使用金屬銅等具有導電性之材料，其例如是利 用電鍍法以形成之。然後以電鑄基礎膜5〇8作爲電極利用 電鑄技術形成例如是金屬鎳之導電性膜510。而且在形成 足夠厚度之導電性膜510後，較佳是進行一導電性膜51〇 之表面平坦化製程。接著，移除加工後之基底5〇〇以及電 鑄基礎膜508，而得到具有形成托架構件2〇〇之形狀的導 電性膜510。 接著’請參照第6C圖，在導電性膜51〇上形成例如 是金屬銅等電鑄基礎膜512。然後以電鑄基礎膜512作爲 電極利用電鑄技術形成例如是白金等不易氧化之導電性膜 20 —I——裝—-----訂·--------· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格⑵Q x 297 529082 8792pif.doc/008 五、發明說明（（Ϋ ) 514。而且，較佳是進行一導電性膜514之表面平坦化製 程。接著，移除導電性膜510以及電鑄基礎膜512，然後 如第6D圖所示，藉由形成通過開口部208以及停止部 210，而得到托架構件200。 雖然本發明已以一較佳實施例揭露如上，然本發明之 技術內容並非限定於上述實施例所記載之範圍，任何熟習 此技藝者，在不脫離本發明之精神和範圍內，當可對上述 實施例作些許之更動與潤飾，其變更或改良之型態也包含 在本發明之範圍內，因此本發明之保護範圍當視後附之申 請專利範圍所界定者爲準。 產業利用性 由上述之說明可以明白瞭解本發明可以提供一種適合 使複數的電子束經過多次曝光成型爲圖案形狀的電子束成 型構件以及具備有上述電子束成型構件之電子束曝光裝 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 21 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐）• _1 mmmt ϋ n ϋ · tmmm ammmm n ϋ ϋ ϋ I em§ I This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Employees ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 529082 8792pif.doc / 008 A7 B7 V. Description of the Invention (π) Further, when the bracket member 200 is formed using a wafer having a fixed size and the mask member 202 is formed using a wafer having a smaller size than the above, it may be formed. The electron beam is formed into a molded member having a desired shape. For example, a silicon wafer having a diameter of 300 mm may be used to form the bracket member 200, and a silicon wafer having a diameter of 200 mm may be used to form the mask member 202. At this time, since a good or defective product of the formed mask member can be selected on the silicon wafer and incorporated into the bracket member 200, even when the opening portion provided in the mask member 202 is very small, Can greatly improve the yield of molded components. In addition, since the mask member 202 is formed using a wafer having a smaller size than the molded member, the mask member can be manufactured using the established manufacturing equipment even when the size of the molded member is, for example, a large diameter of 300 mm or more. It can greatly reduce the manufacturing cost of molded components. As shown in FIG. 2C, the cover member 202 may be fixed to the surface of the base material 206. At this time, the cover member 202 is desirably provided in the base material 206 and has a slightly vertical surface corresponding to the irradiation direction of the electron beam. Moreover, the mask member 202 is preferably designed to be attachable and detachable from the base material 206 by screw or wafer bonding. FIG. 3 is a top view showing an example of the mask member 202 in the second molding member 22. As shown in FIG. As shown in FIG. 3A, the cover member 202 is provided with a rectangular molding opening 2 (Ma as a molding opening 204 having a rectangular shape as described in FIG. 1 and a frame molding provided with a shape different from the molding opening 204a). A plurality of square-shaped opening areas 212 are formed in the area of the openings. In a preferred case, the size of the square-shaped opening areas 212 is 15 squares and the Chinese standard (CNS) A4 specification (2ι〇χ) 4 7 meals ^ '----------- install -------- order --------- (Please read the precautions on the back before filling this page) 529082 A7 B7 8792pif.doc / 008 V. Description of the invention (h) ί is less than or equal to the maximum size of the electron beam after passing through the first molding member 14. In addition, the shape of the frame molding opening area 212 is the same as that through the first molding. The cross-sectional shape of the electron beam after the component 14 is the same or similar. (Please read the precautions on the back before filling this page) Figures 3B, 3C, 3D, and 3E show the preferred embodiment according to the present invention. It is provided in the frame molding opening region 212 of the frame molding opening 204b as a molding opening. An example. As shown in FIG. 3B and FIG. 3C, the frame-shaped opening 204b is, for example, a contact window opening provided on a wafer for electrically connecting a lead and a transistor, or for electrically connecting a lead. The through-holes, etc., are provided at regular intervals or at regular intervals with openings having a hole shape for exposure. As shown in Figs. 3D and 3E, the frame-shaped openings 204b may be used, for example, to expose a transistor. The gates, wires, and the like are provided with openings having a straight line and a space pattern at a certain interval or a certain period. Then, the electron beams formed by the respective first molding members 14 are shot at their respective corresponding screens. The frame opening area 212 of the member 202, so that after the electron beam passes through the plurality of frame forming openings 204b of the frame opening area 212, the electron beam will be patterned and irradiated on the wafer 44 as desired. Area. The screen printed in Figure 4 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is a mask formed during the manufacturing method of a molded component according to an embodiment of the present invention. Schematic diagram of the process of part 202. First, a substrate 300 is provided, which includes a silicon layer 302, a silicon oxide layer 304 disposed on the silicon layer 302, and a silicon layer 306 disposed on the silicon oxide layer 304. In this embodiment The substrate 300 is a silicon-on-insulator substrate. Then a silicon oxide layer is formed on the silicon layer 306. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (20.1 × 297 mm) 529082 A7 B7 8792pif.doc / 008 V. Description of the invention (b) 308. The method for forming the silicon oxide layer 308 is, for example, chemical vapor deposition (CVD). Next, a silicon nitride layer 310 is formed on the oxide cutting layer 308 and the silicon layer 302. A method for forming the silicon nitride layer 310 is, for example, a chemical vapor deposition method. FIG. 4B illustrates a process of forming an opening in the silicon nitride layer 310a and the silicon layer 302. First, a photoresist layer is coated on the silicon nitride layer 310a, and a photoresist layer mask having a set pattern is formed on the silicon nitride layer 310a after exposure and development processes. The setting pattern described above preferably has a pattern in which an opening is formed in a region where the molding opening 204 is provided. In addition, it is preferable that the set pattern described above has a pattern in which openings are formed in a region where the substrate 300 is cut in a substrate 300 cutting process described later. Next, using the formed photoresist mask as a mask ', the method of etching the nitrided sand layer 3 10a, and the method of etching the nitrided sand layer 3 10a is, for example, a dry etching method. Then, after the photoresist mask is removed, the etched silicon nitride layer 310a is used as a mask, and the silicon layer 302 is etched to form the substrate 300 in the region 300 where the molding opening is to be provided. The opening portion is formed in the silicon layer 302 as a cutting opening portion 314 as an opening portion of the cutting base 300. At this time, the silicon layer 302 is preferably anisotropic wet etching using, for example, potassium hydroxide. In addition, the corresponding angle of the surface of the silicon layer 302 after anisotropic etching and the contact surface of the silicon layer 302 and the silicon oxide layer 304 is preferably that the angle of the silicon layer 302 and the bracket member of FIG. 2 are etched by etching. The side angles provided through the openings 208 are substantially equal. After that, the silicon nitride layer 310 is removed. Figure 4C shows a schematic diagram of the process of forming the molded opening 204. First, a photoresist layer is coated on the silicon oxide layer 308, and exposed and displayed. This paper size is in accordance with China National Standard (CNS) A4. (210 X 297 public meals) ----------- · install -------- order --------- (Please read the precautions on the back before filling this page ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 529082 8792pifdoc / 008 A7 ___ B7 V. Invention Description (I 4) (Please read the precautions on the back before filling out this page) After photo-processing, 5 forms a photoresist mask 312 . Next, using the formed photoresist mask 3 12 as a mask, the oxide sand layer 3 18 is etched, and the method of touching the oxide sand layer 3 1 $ is, for example, a dry etching method. Then, the silicon layer 306 is etched to form the molded opening 204, and the method of etching the silicon layer 306 is, for example, a dry etching method. At this time, after the silicon oxide layer 308 is etched, the photoresist mask 312 can be removed, and then the silicon layer 302 can be etched using the etched silicon oxide layer 308 as a mask.靑 According to the brother's 4D picture, remove the photoresist mask 3 12, the oxide sand layer 3 0 8 and the exposed silicon oxide layer 304. Then, the substrate 300 is cut by the cutting opening portion 314 provided on the substrate 300 to obtain a plurality of members composed of a base body of the mask member 202. Then, by using a sputtering method or the like, a metal material such as platinum is hardly oxidized to be deposited on the surface of the member to form a metal protective film 316 to obtain a mask member. The metal material is preferably a noble metal having a non-magnetic property and a high melting point. The metal protective film 316 is preferably formed on at least the irradiation site of the electron beam or the surface through which the electron beam passes. Of course, the metal protective film 316 is preferably formed on the entire surface of the member. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 5 shows a schematic diagram of an example of the process of forming a bracket member. First, a substrate 400 is provided. The substrate 400 includes a silicon layer 402, a silicon oxide layer 404 provided on the silicon layer 402, and a silicon layer 406 provided on the silicon oxide layer 404. In this embodiment, the substrate 400 is a silicon substrate with an insulating layer. Then, as shown in FIG. 5A, a silicon oxide layer 408 is formed on the silicon layer 402. The method for forming the silicon oxide layer 408 is, for example, a chemical vapor deposition method. Next, a silicon nitride layer 410 'is formed on the silicon layer 406 and the silicon oxide layer 408. The method for forming the silicon nitride layer 410 is, for example, a chemical vapor deposition method. 18 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 529082 A7 8792pif.doc / 008 V. Description of the invention (K) Figures 5B, 5C and 5D are for illustration. An opening is formed on the silicon layer 402 (please read the precautions on the back before filling this page) and the silicon layer 406 to form a process through the opening 208. First, a photoresist layer is coated on the silicon nitride layer 410b, and a photoresist mask is formed after exposure and development processes. Next, a photoresist mask is used as a mask to etch the silicon nitride layer 410b, and the method of etching the silicon nitride layer 410b is, for example, a dry etching method. After removing the photoresist mask, the silicon nitride layer 410b after etching is used as a mask, and the silicon layer 406 is etched to form an opening 420. At this time, the silicon layer 406 is preferably anisotropic wet etching using, for example, potassium hydroxide. Moreover, the corresponding angle of the surface of the silicon layer 406 after the anisotropic etching and the contact surface of the silicon layer 406 and the silicon oxide layer 404 is preferably the same as that shown in FIG. 4B in the process of forming the opening in the silicon layer 302. The angles corresponding to the contact surfaces of the silicon layer 302 and the silicon oxide layer 304 of the cut opening 314 are substantially equal. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, please refer to Figure 5C to remove the nitrided sand layer 410. After that, a photoresist layer is coated on the silicon oxide layer 408, and after exposure and development processes, a photoresist mask 412 is formed. Next, using the formed photoresist mask 412 as a mask, the silicon oxide layer 408 is etched, and the method of etching the silicon oxide layer 408 is, for example, a dry etching method. Then, the method of etching the silicon layer 402 to form the opening 422 'is to etch the silicon layer 402, for example, a dry etching method. At this time, after the silicon oxide layer 408 is etched, the photoresist mask 412 can be removed, and then the silicon layer 402 can be etched by using the etched silicon oxide layer 408 as a mask. The opening inner diameter of the opening portion 422 is preferably smaller than the opening inner diameter of the opening portion 420. Next, referring to FIG. 5D, the photoresist mask 412, the oxide layer 408, and the exposed silicon oxide layer 404 are removed to form a through-opening portion. 19 paper size (+ W? I ^^ _ NS) A4 Specifications ⑵0 x 297 issued) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 529082 8792pif.doc / 008 A7 ---- B7 V. Invention Π) 208 and Stop Unit 210. Then, as shown in FIG. 5E, the bracket member 200 is obtained by depositing a non-oxidizable metal material such as platinum on the surface using a sputtering method or the like to form a metal protective film 316. FIG. 6 illustrates another example of the process of forming the bracket member 200. Using the same process as in FIGS. 5A to 5D, on a substrate 500 including a sand layer 502, a silicon oxide layer 504 provided on the silicon layer 502, and a silicon layer 506 provided on the silicon oxide layer 504. For processing. In the etching process of the silicon nitride layer 410b shown in FIG. 5B, it is preferable to use the pattern of the photoresist mask formed on the nitrided sand layer 410b and the photoresist mask with a slightly inverted pattern. A silicon nitride layer (not shown) formed on the silicon layer, and the silicon layer 506 is etched by using the etched silicon nitride layer as a mask. Next, referring to FIG. 6B, an electroformed base film 508 composed of an electroformed base film is formed in a process for forming a conductive film by the following electroforming on the sand substrate 500 processed in FIG. 6A. . The electroformed base film 508 is made of a conductive material such as metallic copper, for example, and is formed by electroplating. A conductive film 510, such as metallic nickel, is then formed using the electroformed base film 508 as an electrode by electroforming technology. After the conductive film 510 having a sufficient thickness is formed, a surface planarization process of the conductive film 51 is preferably performed. Next, the processed substrate 500 and the electroformed base film 508 are removed to obtain a conductive film 510 having a shape of a bracket member 2000. Next, referring to FIG. 6C, an electroformed base film 512 such as metallic copper is formed on the conductive film 51. Then, the electroformed base film 512 is used as an electrode to form a conductive film 20, such as platinum, which is not easily oxidized by electroforming technology. Read the notes on the reverse side and fill in this page) This paper size applies the Chinese National Standard (CNS) A4 specification ⑵Q x 297 529082 8792pif.doc / 008 V. Description of the invention ((Ϋ) 514. Moreover, it is better to conduct electricity The process of planarizing the surface of the film 514. Next, the conductive film 510 and the electroformed base film 512 are removed, and then as shown in FIG. Although the present invention has been disclosed as above with a preferred embodiment, the technical content of the present invention is not limited to the scope described in the above embodiments. Any person skilled in the art can make changes without departing from the spirit and scope of the present invention. The above embodiments make some changes and modifications, and the types of changes or improvements are also included in the scope of the present invention, so the scope of protection of the present invention shall be determined by the scope of the attached patent application. The above It can be clearly understood that the present invention can provide an electron beam forming member suitable for forming a plurality of electron beams into a pattern shape after multiple exposures, and an electron beam exposure device equipped with the above electron beam forming member (please read the precautions on the back first) (Fill in this page) Printed by the Intellectual Property Bureau Employees' Cooperatives of the Ministry of Economic Affairs 21 This paper size applies to China National Standard (CNS) A4 (210x297 mm)