JP2000331917A - Exposure mask and exposure apparatus of electron beam - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent deformation of a full exposure fine-line pattern by mechanically fastening a silicon mask chip to a holder base body through using a metallic presser structure. SOLUTION: In a configuration of a combining exposure mask of a silicon mask chip with a holder, the silicon mask chip, in whose structure a single- crystal silicon supporting body 3 is joined to a single-crystal silicon thin layer 2 via a silicon oxide film 4, is fastened mechanically to a holder base body 22 by using a metallic presser structure 10. Furthermore, by forming on the surface of the single-crystal silicon thin layer 2 a metallic conductive film 7, is secured via the conductive film 7 and the presser structure 10 the electrical connection of the holder base body 22 with the single-crystal silicon thin layer 2, whereon an electron beam 20 is projected. Thereby, deformation of a full exposure fine-line pattern can be prevented which is generated in the conventional bonding methods.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus for exposing a sample to an electron beam to draw a pattern, and an electron beam exposure mask used in the apparatus.

[0002]

2. Description of the Related Art In recent years, with the advance of high integration and miniaturization of semiconductor integrated circuits, exposure with an electron beam having high resolution has been performed. Above all, various element patterns repeatedly appearing in a circuit pattern can be partially exposed collectively by a transfer method using an exposure mask, which is called partial batch exposure in which a desired circuit pattern can be quickly exposed. The exposure method (also referred to as block exposure, cell projection exposure, or character projection) has a short exposure time of 0.2.
This exposure method is suitable for exposing fine patterns of μm or less.

[0003] The exposure mask used in this method is usually such that a large number of different element patterns are formed as openings in one mask, and exposure can be performed by selecting a desired element pattern. . However, the types of element patterns that can be prepared are limited by the size of the mask. However, since the function of exposing an arbitrary rectangular shape by the variable shaping exposure method is required at a minimum,
The mask is provided with a large rectangular opening required for exposure to an arbitrary rectangular shape, so that the variable shaping exposure method can be used together with the partial batch exposure method.

FIG. 10 is a vertical sectional view showing a schematic configuration of an electron beam exposure apparatus having a function of a partial batch exposure method, and a control section is shown by functional blocks. The electron beam 20 extracted from the electron gun 82 passes through a group of electron optical lenses including a molded lens 84, a molded lens 88, a reduction lens 90, and a projection lens 92, and on a sample 93 set on an XY stage 94. Is irradiated. As a control mechanism of the electron beam 20, ON / OFF of irradiation of the electron beam 20 is used.
, A transfer deflection electrode 86 for selecting a partial collective pattern, a shaping deflection electrode 87 for controlling a beam size during variable shaping exposure, and a position deflection electrode 91 for controlling an exposure position. A rectangular aperture mask 85 is provided on the side of the electron gun 82 on the optical axis of the electron beam 20, and the cross-sectional shape of the electron beam 20 is formed into a rectangular shape. An exposure mask 89 is provided at a stage subsequent to the optical axis of the electron beam 20. These lens groups, deflectors, masks, samples, etc., are maintained in a mirror
It is housed in 1 and is isolated from the atmosphere.

The selection of an element pattern from the partial collective pattern provided on the exposure mask 89 is performed by deflecting the rectangular shaped electron beam 20 by the transfer deflection electrode 86 and leading it to a desired pattern on the exposure mask 89. Done.

When performing variable shaping exposure, the rectangular electron beam 20 is transferred to the exposure mask 89 by the transfer deflection electrode 86.
The opening on the rectangular opening mask 85 and the exposure mask 8
Exposure is performed by adjusting the size of the large rectangular opening on the upper surface of the substrate 9. Therefore, in order to perform exposure with high accuracy, it is necessary to create a partial collective pattern with high accuracy and pay attention to the control of the exposure pattern size during variable shaping exposure.

The blanking electrode 83 is a beam blanking control device 102, the transfer deflection electrode 86 is a transfer deflection control device 103, and the shaping deflection electrode 87 is a beam shaping deflection control device.
At 104, the position deflection electrode 91 is controlled by the beam position deflection control device 1.
The control devices are controlled by an analog control signal from the control device 05, and these control devices are comprehensively controlled by the control device 101.

The structure of the exposure mask 89 is described in Japanese Patent Application Laid-Open No. Hei 6-132204 as a conventional technique. The exposure mask 89 is attached to the mirror body 81 in a state where it is combined with the holder. FIG. 3 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined. The configuration shown in FIG. 3 basically has a structure in which a silicon mask chip is fixed to a metal holder 5 with a conductive adhesive 6.

A silicon mask chip generally comprises a single-crystal silicon thin layer 2 having a thickness of about 10 to 20 μm.
It is formed using a bonded silicon substrate which is bonded to a single crystal silicon support 3 having a plane orientation (100) and a thickness of about 0.5 mm with a silicon oxide film 4. The pattern opening 1 of the electron beam exposure mask is a single crystal silicon thin layer 2
Is anisotropically dry-etched.
Single crystal silicon thin layer 2 between single crystal silicon supports 3
The portion where the pattern opening 1 is formed is removed by anisotropic alkali etching. As a result, only the structure of the single crystal silicon support 3 as shown in FIG. 3 is left. The silicon oxide film 4 is used as a stopper for anisotropic alkali etching so that the single-crystal silicon thin layer 2 is not etched at this time. The portion of the silicon oxide film 4 where the pattern opening 1 is formed is removed with an aqueous solution of hydrofluoric acid after anisotropic alkali etching, leaving the portion of the silicon oxide film 4 shown in FIG. Thus, a silicon mask chip is obtained. However, in this state, when the electron beam 20 is irradiated, electrons may be charged up and a problem such as bending of the trajectory of the electron beam 20 may occur.
A conductive film 7 made of a non-magnetic heavy metal such as gold, platinum, and osmium is formed to a thickness of about 50 nm. As shown in FIG. 10, when a silicon mask chip having such a configuration is attached to a mirror body 81 as an exposure mask 89, conventionally, the opposite side of the single crystal silicon support 3 is set to the side irradiated with the electron beam 20. And a metal holder 5 made of a non-magnetic metal. Single crystal silicon support 3
And the metal holder 5 are fixed with a conductive adhesive 6.
In consideration of the thermal conductivity in vacuum between the silicon mask chip and the metal holder 5, a conductive adhesive having good thermal conductivity is used. Further, a metal deposition film 8 is formed on the back surface side in consideration of electrical conduction.

An electron beam having such a structure that the side without the single-crystal silicon support 3 is the incident side of the electron beam 20 and the single-crystal silicon support 3 and the metal holder 5 are fixed with the conductive adhesive 6. The exposure mask has the following problems.

The first problem is that since the silicon oxide film 4 is provided between the single-crystal silicon thin layer 2 and the metal holder 5, electric conduction is not good and the single-crystal silicon thin layer 2 is charged up. It is easy to happen. The single-crystal silicon support 3 of the silicon mask chip is adhered to the metal holder 5 by the conductive adhesive 6, but the single-crystal silicon thin layer 2 is insulated from the single-crystal silicon support 3 by the silicon oxide film 4. is there. The silicon oxide film 4 has a structure penetrating between the single crystal silicon thin layer 2 and the single crystal silicon support 3 during the etching. The metal deposition film 8 is formed on the back side in consideration of electrical conduction, but the inventors have found that the deposition film 8 is not formed on the silicon oxide film 4 portion.

As a countermeasure against this, conventionally, as shown in FIG. 3, an electrically conductive adhesive 9 has been used to ensure electrical continuity between the single crystal silicon thin layer 2 and the single crystal silicon support 3. In order to ensure the reliability of electrical conduction, it is necessary to apply a relatively large amount of the conductive adhesive 9, but this is not preferable because it causes contamination of the device.

The second problem is that the pattern formed on the silicon mask chip is easily deformed. This has a large effect when the collective exposure pattern is a fine line pattern. Since the silicon mask chip is heated by the irradiation of the electron beam 20, the conductive adhesive 6 is required to have heat resistance such that a small amount of gas is emitted up to a high temperature. In general, such a conductive adhesive needs to be cured at a high temperature of about 200 ° C. The above-mentioned pattern deformation occurs in the process of cooling from the curing temperature to room temperature after the application of the conductive adhesive 6 due to the difference in the thermal expansion coefficient between the silicon mask chip and the metal holder 5. This pattern deformation becomes larger as the single crystal silicon thin layer 2 becomes thinner and the pattern opening 1 becomes finer.

The third problem is that the size of the exposure pattern tends to fluctuate during the variable shaping exposure. This fluctuation is caused by charging up of the shaping deflection electrode 87.
FIG. 11 is a partially enlarged view of one pattern opening 1 of the exposure mask shown in FIG. As shown in FIG. 11, on the surface of the shaped deflection electrode 87, an organic substance evaporating from the resist of the single-crystal silicon thin layer 2 of the exposure mask adheres to become an insulating film 95, which grows by repeating the exposure process. on the other hand,
The reason why the shaped deflection electrode 87 is charged up is that scattered electrons 21 generated by irradiating the conductive film 7 on the surface of the exposure mask with the electron beam 20 irradiate the insulating film 95 of the shaped deflection electrode 87. This charge-up is more likely to occur by repeating the exposure process. Since the source of the scattered electrons 21 is an exposure mask, it is desirable that the exposure mask generate less scattered electrons. In the case of the prior art shown in FIG. 3 or FIG. 11, a heavy metal film such as tungsten, gold, platinum, osmium or the like is formed as the conductive film 7 on the incident side of the electron beam 20 of the exposure mask. Increases, the surface scattering of electrons increases, so in this configuration, scattered electrons are easily generated,
Improvement is needed. The fourth problem is that in the conventional configuration in which the silicon mask chip is fixed to the metal holder 5 with the conductive adhesive 6, it takes a long time to solidify the conductive adhesive 6, and the productivity is poor.

[0015]

SUMMARY OF THE INVENTION It is an object of the present invention to improve the electrical continuity so that a single-crystal silicon thin layer is less likely to be charged up and a pattern formed on a silicon mask chip is less likely to be deformed. An object of the present invention is to provide an electron beam exposure mask that hardly causes a change in an exposure pattern size during variable shaping exposure and can improve productivity, and an electron beam exposure apparatus using the same.

[0016]

Means for Solving the Problems To achieve the above object, the present invention has the following constitution.

(1) Electron beam exposure for mechanically fixing a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film to a holder substrate using a holding structure. It has a mask structure.
Due to the difference in the coefficient of thermal expansion between the metal holder and the silicon mask chip, it is possible to prevent the deformation of the batch exposure fine line pattern generated by the bonding method using the thermosetting conductive paste and to enhance the productivity.

(2) The holder base is composed of a holder base body and a silicon mask chip guide structure, and the structure is an electron beam exposure mask in which these are fixed with screws.
When the holder base is divided in this way, the flatness of the surface of the holder in contact with the silicon mask chip can be increased, and the depth accuracy of the hole for embedding the silicon mask chip can be increased.

(3) The structure of an electron beam exposure mask of a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, wherein the single-crystal silicon thin layer is in contact with the holder base body. And The contact between the single-crystal silicon thin layer on which the electron beam is incident and the holder base body is ensured, so that the occurrence of charge-up can be reduced and the thermal conductivity can be increased.
Also, the back surface is etched using an alkali etch which is anisotropic etching, and the single-crystal silicon thin layer at the end of the silicon mask chip subjected to chip separation has a plane orientation (1).
00), a tapered shape having an angle of 54.74 ° is employed. Therefore, when this configuration is employed, the play of the silicon mask chip during assembly can be reduced, and the reliability of mechanical fixing by the holding structure is increased. Can be.

(4) The side of the silicon mask chip having a structure in which the single-crystal silicon thin layer and the single-crystal silicon support are joined by a silicon oxide film is provided on the side of the single-crystal silicon support on which the single-crystal silicon thin layer is provided. The electron beam exposure mask has a structure opposite to the electron beam incident side. In this case, the heavy metal conductive film is not provided on the surface of the single crystal silicon thin layer on the side of the electron beam incident direction. The amount of scattered electrons generated from the electron beam exposure mask can be reduced while preventing charge-up of the electron beam exposure mask. For this reason, drift fluctuation of the exposure pattern size at the time of variable shaping exposure can be reduced.

(5) In a silicon mask chip having a structure in which a single crystal silicon thin layer and a single crystal silicon support are joined by a silicon oxide film, the specific resistance of the single crystal silicon thin layer is 20.
The structure of the electron beam exposure mask is ohm · cm or less. In addition, a gold film such as gold plating is formed on the surface of the holder substrate in contact with the single-crystal silicon thin layer. In this case, no heavy metal conductive film is provided on the surface of the single crystal silicon thin layer. By setting the specific resistance of the single-crystal silicon thin layer to 20 ohm · cm or less, the conductivity inside the single-crystal silicon thin layer can be ensured even without the heavy metal conductive film. When the flat surface side of the single-crystal silicon thin layer is in surface contact with the holder substrate, and a gold film is formed on the contact surface of the holder substrate, gold silicide is formed on the contact surface between the single-crystal silicon thin layer and the holder substrate. Is formed, electric conductivity between the single-crystal silicon thin layer and the holder base can be ensured without forming a heavy metal conductive film on the surface of the single-crystal silicon thin layer. The reason why this structure is desirable is that when the heavy metal conductive film is formed only on one surface of the single crystal silicon thin layer, the single crystal silicon thin layer is likely to be deformed due to stress during the formation of the heavy metal conductive film.

(6) By using the electron beam exposure mask having the above structure in an electron beam exposure apparatus, a sample is irradiated with an electron beam to expose a pattern. Since pattern deformation can be reduced, reliability can be improved, charge-up of an electron beam exposure mask can be prevented, and the amount of scattered electrons can be reduced. Therefore, drift fluctuation of the exposure pattern size during variable shaping exposure can be reduced.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

(Example 1) FIG. 4 is a vertical sectional view of an exposure mask in which a silicon mask chip and a holder are combined as in FIG. The structure of the electron beam exposure mask is such that a silicon mask chip having a structure in which a single-crystal silicon thin layer 2 and a single-crystal silicon support 3 are joined by a silicon oxide film 4 is formed by using a metal holding structure 10 as a holder base. 22
It is a structure that is mechanically fixed to

A metal conductive film 7 is formed on the surface of the single-crystal silicon thin layer 2, and the electrical connection between the single-crystal silicon thin layer 2 on which the electron beam 20 is incident and the holder base 22 is established. It is ensured through the conductive film 7 and the holding structure 10.

In this structure, the silicon mask chip is dropped into the concave portion of the holder base 22, and the holding structure 10 may be fixed to the holder base 22, for example, by screws. Therefore, the productivity is higher than that of the bonding method. In addition, since all the assembly operations can be performed at room temperature, deformation of the batch exposure fine line pattern caused by a change in ambient temperature can be prevented in the bonding method using a thermosetting conductive paste.

(Embodiment 2) In the structure shown in FIG.
In order to secure the silicon mask chip by the restraining structure 10, it is required that the processing accuracy of the concave portion of the holder base 22 be high. FIG. 5 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined as in FIG. In order to easily obtain the processing accuracy of the concave portion of the holder base 22 shown in FIG. 4, the holder base 22 has a divided structure. In FIG. 5, the holder base 23 is composed of a holder base body 11 having a flat plate with a hole, and a silicon mask chip guide structure 12 also having a flat plate with a hole. And assembled with screws. Since the surface of the holder base body 11 in contact with the single crystal silicon support 3 is divided from the silicon mask chip guide structure 12 unlike the case of FIG. 4, it is easy to increase the flatness of the surface. . Thereby, the holder base 23
The flatness of the surface in contact with the silicon mask chip can be increased. Further, since the holder base 23 is divided into the holder base main body 11 and the silicon mask chip guide structure 12, the accuracy of the height dimension of the silicon mask chip guide structure 12 sandwiching the silicon mask chip can be improved.

FIGS. 6 and 7 are longitudinal sectional views of a portion where the silicon mask chip of the exposure mask is fixed by the holder. The shape of the single crystal silicon support 3 of the silicon mask chip depends on its unique features described below.
The shape is as shown in FIG. 6 or FIG.

As shown in FIG. 6, the end of the silicon mask chip which has been subjected to chip separation using the backside alkali etching has a tapered shape with an angle of 54.74 ° as shown in FIG. In the case of such a shape, as can be easily understood from FIG. 6, since the surface of the silicon mask chip in contact with the holder base body 11 becomes small, there is a problem that the silicon mask chip has a large play during assembly.
Further, at the time of fixing by the restraining structure 10, the end of the silicon mask chip is easily damaged. Further, even if the height and dimensional accuracy of the silicon mask chip guide structure 12 are increased, the conductive film 7 formed on the single-crystal silicon thin layer 2 and the restraining structure 10 may not be formed due to the possibility of deformation or breakage of the end portion. The reliability of the electrical connection is low.

As described above, the end of the silicon mask chip which has been subjected to chip separation using the backside alkali etching has a tapered shape with an angle of 54.74 ° as a result of anisotropic etching. If the surface of the silicon mask chip shown is turned upside down and the single crystal silicon thin layer 2 is brought into contact with the holder base body 11 as shown in FIG. Is 12
Since the angle is 5.26 °, mechanical fixing of the silicon mask chip can be reliably performed. Here, if the height of the silicon mask chip guide structure 12 is smaller than the thickness of the silicon mask chip, mechanical fixing of the silicon mask chip can be performed more reliably.

(Embodiment 3) FIG. 2 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined as in FIG. This embodiment adopts the configuration of FIG. 7 described above. Further, before assembling the silicon mask chip with the holder base body 11, the silicon mask chip guide structure 12, and the holding structure 10, the single crystal is formed. The conductive film 7 is formed only on the side of the silicon thin layer 2 opposite to the surface on which the electron beam is incident.

In the exposure mask having the structure shown in FIG. 2, since only the conductive film 7 is provided between the single-crystal silicon thin layer 2 and the holder base body 11, electrical contact is ensured.
Thermal conductivity can also be increased. In addition, since the end portion of the silicon mask chip that has been subjected to chip separation using the back side alkali etching has the configuration shown in FIG. 7, the silicon mask chip has a small play at the time of assembly and can be mechanically fixed. It can be done reliably.

FIG. 12 is a partially enlarged view of one pattern opening of the exposure mask shown in FIG. 2, similarly to FIG.
Since the heavy metal conductive film 7 is formed on the back surface, not on the incident side of the electron beam 20, the electron beam 20 is incident on silicon, which is a light atom. Since the generation of surface scattered electrons from the light atom material is small, the number of reflected electrons incident on the insulating film 95 grown on the shaped deflection electrode 87 is small, and the charge-up is hardly caused. This leads to a small drift fluctuation of the exposure pattern size during the variable shaping exposure.

Embodiment 4 FIG. 1 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined as in FIG. This embodiment adopts the configuration of FIG. 7 described above, and further, without forming the conductive film 7,
Prior to assembly, a gold plating film 13 is formed on the holder base body 11.

In the embodiment shown in FIG. 2, the heavy metal conductive film 7 is formed only on one side of the single crystal silicon thin layer 2, but the single crystal silicon thin layer is deformed by stress when the conductive film 7 is formed. It's easy to do. For this reason, the structure is such that the heavy metal conductive film does not exist on the surface of the single crystal silicon thin layer 2, the specific resistance of the single crystal silicon thin layer 2 is set to 20 ohm · cm or less, and even if the heavy metal conductive film does not exist, The conductivity inside the single-crystal silicon thin layer 2 is favorably maintained. A gold plating film 13 is formed by plating on the contact surface of the holder base body 11 with which the single-crystal silicon thin layer 2 contacts. Since gold silicide is formed on the contact surface between the single-crystal silicon thin layer 2 and the holder base body 11, the single-crystal silicon thin layer 2 can be formed without forming a heavy metal conductive film on the surface of the single-crystal silicon thin layer 2. The conductivity between the main body 11 and the holder base body 11 can be secured.

In the case of this structure, the single crystal silicon thin layer 2
When the heavy metal conductive film is formed only on one side of the above, deformation of the single crystal silicon thin layer due to stress at the time of forming the heavy metal conductive film does not occur. Therefore, with this structure, the amount of scattered electrons generated from the electron beam exposure mask can be reduced while preventing the charge-up of the electron beam exposure mask in a state where the pattern deformation is small. For this reason, drift fluctuation of the exposure pattern size at the time of variable shaping exposure can be reduced while maintaining the pattern accuracy.

(Embodiment 5) FIG. 8 is a view showing an example of an electron beam exposure mask according to the present invention. FIG. 8 (a) is a plan view, and FIG. 8 (b) is a sectional view taken along a line AB in FIG. (C) is a sectional view taken along line CD of (a).

In FIG. 8A, a silicon mask chip comprising the single-crystal silicon thin layer 2 and the single-crystal silicon support 3 shown in FIG. 1 is placed on the holder base body 11, and the periphery thereof is covered with the silicon mask chip. Guide structure 12
And is fixed by the holding structure 10. A hole 17 is provided in the holder base body 11, and as shown in FIG. 8B, the silicon mask chip guide structure 12 is fixed with screws 14, and as shown in FIG. The holding structure 10 is fixed with screws 15 via the structure 12. Single crystal silicon support 3
8 (a) or 8 (c) is suppressed by the holding portion 16 of the holding structure 10. As shown in FIG. Holder base body 11, silicon mask chip guide structure 12,
The restraining structure 10 is provided with a rectangular opening through which the electron beam passes.

In the assembling procedure, first, the holder base body 11 and the silicon mask chip guide structure 12 are fixed with screws 14, and the silicon mask chip is dropped into a rectangular opening formed in the silicon mask chip guide structure 12. The thickness of the silicon mask chip guide structure 12 is smaller than the thickness of the silicon mask chip and the dimensional accuracy of the portion of the single-crystal silicon thin layer 2 of the silicon mask chip is good, so that the play at this time is small. The holding structure 10 is placed thereon and fixed to the holder base body 11 with the screw 15 via the silicon mask chip guide structure 12. At this time, care must be taken to fix the silicon mask chip only at two opposing sides on the outer periphery of the rectangular opening of the holding structure 10.

The holding structure 10 is formed of a thin plate to reduce rigidity, and the holding portion 16 fixes the end of the silicon mask chip at an angle of 125.26 °, so that mechanical fixing can be reliably performed.

Although not shown, the holder base body 11
Has a gold plating film having a thickness of about 10 μm. Single-crystal silicon thin layer 2 and holder base body 11
Is a structure that makes direct contact in a plane-to-plane manner, and since gold silicide is formed at this interface by a gold plating film, electrical contact and thermal contact are good. In addition, since no heavy metal conductive film is formed, generation of scattered electrons from the exposure mask is suppressed.

(Embodiment 6) FIG. 9 is a view showing another example of the electron beam exposure mask according to the present invention.
Is a plan view, (b) is a cross-sectional view taken along a line AB in (a), and (c) is a cross-sectional view taken along a line CD in (a).

FIG. 9 shows the holding structure 1 of the example shown in FIG.
0, two disc-shaped holding structures 18 having holes are provided. In the example shown in FIG. 8, when the holding structure 10 is mounted, the horizontal position of the integrated holding structure 10 is adjusted in order to fix the silicon mask chip only at the two opposing sides on the outer periphery of the rectangular opening. While fixing it with two screws 15 in two holes 17,
The assembly workability was difficult. In this example, the holding structure 1
8 are independent of each other. Therefore, during assembly work, pay attention to only the position of each holding structure 18 and screw 15
Can be fixed, and the assemblability is improved.

By using the exposure mask shown in FIGS. 8 and 9 as the exposure mask 89 of the electron beam exposure apparatus shown in FIG. 10, the deformation of the pattern of the exposure mask 89 can be reduced as compared with the prior art, so that the reliability is improved. Thus, charge-up of the exposure mask 89 can be prevented.
Since the amount of scattered electrons generated from the laser beam can be reduced, it is possible to obtain an excellent electron beam exposure apparatus capable of reducing the drift fluctuation of the exposure pattern size during variable shaping exposure.

[0045]

As described above, according to the present invention,
Improves electrical continuity, hardly causes charge-up of the single-crystal silicon thin layer, hardly causes deformation of the pattern formed on the silicon mask chip, hardly causes fluctuation of the exposure pattern size during variable molding exposure, and productivity , An electron beam exposure mask and an electron beam exposure apparatus with improved characteristics can be obtained.

[Brief description of the drawings]

FIG. 1 shows an embodiment of the present invention, and is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined.

FIG. 2 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined, showing one embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined, showing a conventional technique.

FIG. 4 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined, showing one embodiment of the present invention.

FIG. 5 is a longitudinal sectional view of an exposure mask in which a silicon mask chip and a holder are combined, showing one embodiment of the present invention.

FIG. 6 shows one embodiment of the present invention, and is a longitudinal sectional view of a portion where a silicon mask chip of an exposure mask is fixed by a holder.

FIG. 7 shows one embodiment of the present invention, and is a longitudinal sectional view of a portion where a silicon mask chip of an exposure mask is fixed by a holder.

FIG. 8 is a plan view of an electron beam exposure mask according to the present invention,
And a sectional view.

FIG. 9 is a plan view of an electron beam exposure mask according to the present invention;
And a sectional view.

FIG. 10 is a longitudinal sectional view showing a schematic configuration of an electron beam exposure apparatus.

11 is a partially enlarged view of one pattern opening of the exposure mask shown in FIG. 3, showing a conventional example.

FIG. 12 is a partially enlarged view of one pattern opening of the exposure mask shown in FIG. 2;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Pattern opening, 2 ... Single crystal silicon thin layer, 3 ... Single crystal silicon support, 4 ... Silicon oxide film, 5 ... Metal holder, 6 ... Conductive adhesive, 7 ... Conductive film, 8 ... Vapor deposition film,
9: conductive adhesive, 10: holding structure, 11: holder base body, 12: silicon mask chip guide structure,
13: gold plated film, 14, 15: screw, 16: holding part,
17 ... hole, 18 ... holding structure, 20 ... electron beam, 21
... Scattered electrons, 22, 23 ... Holder base, 82 ... Electron gun, 84,88 ... Molded lens, 87 ... Molded deflection electrode, 9
3 ... sample, 95 ... insulating film, 101 ... control device.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor, Isamu Tawa 882-Chair, Ota-shi, Hitachinaka-shi, Ibaraki F-term (reference) 2H095 BA08 BB29 BB37 BC17 BC28 BC30 2H097 CA16 JA02 LA10 5C034 BB05 5F056 AA06 AA30 CC04 FA05

Claims (13)

[Claims] 1. An electron beam exposure mask comprising a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder substrate for fixing the silicon mask chip. ,
An electron beam exposure mask, comprising: a holding structure for holding a part of the single crystal silicon support; and fixing means for mechanically fixing the holding structure and the holder base. 2. An electron beam exposure mask according to claim 1, wherein said fixing means is a screw. 3. An electron beam exposure mask according to claim 1, wherein said holding structure is constituted by a plate having a rectangular opening. 4. An electron beam exposure mask according to claim 1, wherein said holding structure is constituted by a disc-shaped plate having holes. 5. The device according to claim 1, wherein said holder base comprises a holder base body on which said silicon mask chip is mounted, and a silicon mask chip guide structure surrounding said silicon mask chip. Electron beam exposure mask. 6. An electron beam exposure mask according to claim 5, wherein a thickness of said silicon mask chip guide structure is smaller than a thickness of said silicon mask chip. 7. An electron beam exposure mask comprising a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder substrate for fixing the silicon mask chip. ,
An electron beam exposure mask, wherein the single-crystal silicon thin layer is provided on a side of the single-crystal silicon support opposite to a side on which the electron beam is irradiated. 8. An electron beam exposure mask comprising a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder substrate for fixing the silicon mask chip. ,
An electron beam exposure mask, wherein the single-crystal silicon thin layer has a specific resistance of 20 ohm · cm or less, and the holder base is provided with a gold film on a surface in contact with the single-crystal silicon thin layer. . 9. An electron source for generating an electron beam, an electron optical lens group for narrowing the electron beam, a deflector for guiding the electron beam to a sample and irradiating the sample, and a forming mask for shaping a cross-sectional shape of the electron beam. And a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder base for fixing the silicon mask chip. An electron beam exposure mask, wherein the electron beam passes through an opening provided and the electron beam is shaped into a desired cross-sectional shape. An electron beam exposure apparatus comprising: fixing means for mechanically fixing a holding structure for suppressing a part of a support and the holder base. Apparatus. 10. The silicon mask chip guide structure according to claim 9, wherein said holder base of said electron beam exposure mask has a holder base body on which said silicon mask chip is mounted and a silicon mask chip guide structure surrounding said silicon mask chip. An electron beam exposure apparatus, comprising: 11. The electron beam exposure apparatus according to claim 10, wherein the thickness of the silicon mask chip guide structure is smaller than the thickness of the silicon mask chip. 12. An electron source for generating an electron beam, a group of electron optical lenses for narrowing the electron beam, a deflector for guiding the electron beam to a sample and irradiating the sample, and a forming mask for shaping a cross-sectional shape of the electron beam. And a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder base for fixing the silicon mask chip. An electron beam exposure mask, wherein the electron beam passes through a provided opening to form the electron beam into a desired cross-sectional shape. An electron beam exposure, wherein a layer is provided on a side of the single-crystal silicon support opposite to a side on which the electron beam is irradiated. Location. 13. An electron source for generating an electron beam, an electron optical lens group for narrowing the electron beam, a deflector for guiding the electron beam to a sample and irradiating the sample, and a shaping mask for shaping a cross-sectional shape of the electron beam. And a silicon mask chip having a structure in which a single-crystal silicon thin layer and a single-crystal silicon support are joined by a silicon oxide film, and a holder base for fixing the silicon mask chip. An electron beam exposure mask, wherein the electron beam passes through a provided opening to form the electron beam into a desired cross-sectional shape. The layer has a specific resistance of 20 ohm · cm or less, and the holder base is provided with a gold film on a surface in contact with the single-crystal silicon thin layer. Electron beam exposure apparatus according to claim and.