JP2004165076A - Manufacturing method of deflector, deflector, and exposing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a deflector with excellent operation performance and operation efficiency. <P>SOLUTION: The manufacturing method of a charged particle beam deflector is composed of a base board preparation step preparing a base board having a first layer, a second layer, and an insulated third layer interposed between the first layer and the second layer, a first electrode through-hole forming step forming a first electrode throgh-hole penetrating through the first layer, a second electrode through-hole forming step forming a second electrode through-hole penetrating through the second layer, a first electrode forming step forming the first electrode by embedding a conductive material in the first electrode through-hole, and a second electrode forming step forming the second electrode by embedding a conductive material in the second electrode through-hole. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a deflector, a deflector, and an exposure apparatus. In particular, the present invention relates to a method of manufacturing a small deflector manufactured by a semiconductor process, a deflector manufactured by the manufacturing method, and an exposure apparatus including the deflector.
[0002]
[Prior art]
A small deflector included in a conventional electron beam exposure apparatus includes an electrode forming step of forming a plurality of deflection electrode units including a plurality of deflection electrodes, a wiring forming step of forming wiring electrically connected to the deflection electrodes, and It is manufactured by an aperture forming step of forming a through hole through which an electron beam passes. In the electrode forming step, a resist mask for the deflection electrode is formed on the surface of the Si substrate, and the Si substrate is etched through the resist mask to form a through hole for an electrode. Then, after an insulating film is formed on the inner wall of the electrode through hole, a metal film to be a plating electrode is formed on the back surface of the Si substrate, and a deflection electrode is formed in the electrode through hole by electroplating (for example, see Patent Reference 1).
[0003]
[Patent Document 1]
JP-A-2002-217089 (FIG. 7)
[0004]
[Problems to be solved by the invention]
However, in the method of manufacturing a small deflector as described above, the aspect ratio is high due to problems such as roughness accuracy of the side wall of the electrode through hole, dimensional accuracy of etching, etching speed, and in-plane uniformity of plating. It was difficult to form electrodes. Therefore, it has been difficult to increase the driving speed of the deflector. In the case of a deflector provided with a plurality of deflection electrode units, when one deflection electrode fails, the entire deflector must be replaced. As a result, there is a problem that a large amount of time is required for repair adjustment time such as stopping the electron beam exposure apparatus, opening and closing the lens barrel, and adjusting the electron beam. Furthermore, if all the deflection electrode units included in the deflector do not operate normally, they cannot be used, and the technical development of the above-described electrode forming process is immature, so that there is a problem that the yield of products is poor.
[0005]
Therefore, an object of the present invention is to provide a method of manufacturing a deflector, a deflector, and an exposure apparatus that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.
[0006]
[Means for Solving the Problems]
That is, according to the first aspect of the present invention, there is provided a method of manufacturing a deflector for deflecting a charged particle beam, comprising: a first layer, a second layer, and a layer between the first layer and the second layer. A substrate preparing step of preparing a substrate having an insulating third layer; a first electrode through hole forming step of forming a first electrode through hole penetrating the first layer; and a second step of forming a second electrode penetrating through the second layer. Forming a second electrode through hole for forming an electrode through hole, forming a first deflection electrode by embedding a conductive material in the first electrode through hole, and forming a second electrode through hole; Forming a second deflection electrode by embedding a conductive material in the hole. The method may further include a through-hole forming step of forming a through-hole in the substrate, through which the first deflection electrode and the second deflection electrode are exposed and through which the charged particle beam passes.
[0007]
The step of forming the through hole for the first electrode includes the step of forming a through hole for the first electrode having a predetermined shape, and the step of forming the through hole for the second electrode includes the step of forming the through hole for the second electrode. Forming a through-hole; forming the first electrode includes forming a first deflection electrode having a predetermined shape; and forming the second electrode includes forming a second deflection electrode having another shape. May be included.
[0008]
The step of forming the first electrode through-hole includes forming a cylindrical first electrode through-hole, and the step of forming the second electrode through-hole forms two opposing second electrode through-holes. The first electrode forming step includes forming a cylindrical first deflection electrode, and the second electrode forming step includes forming two opposing second deflection electrodes. Is also good.
[0009]
The step of forming the second electrode through-hole includes forming two second electrode through-holes spaced apart from each other by a diameter smaller than the diameter of the first electrode through-hole. Forming two second deflection electrodes spaced apart less than the diameter of the electrodes may be included.
[0010]
The first electrode through-hole forming step includes forming a first electrode through-hole at a predetermined position in the in-plane direction of the substrate, and the second electrode through-hole forming step includes forming the first electrode through-hole in the in-plane direction of the substrate. Forming a second electrode through-hole at another position of the predetermined position; forming the first electrode includes forming a first deflection electrode formed at the predetermined position; The electrode forming step may include forming a second deflection electrode formed at another position.
[0011]
The step of forming the first electrode through hole includes forming two first electrode through holes along the first direction, and the step of forming the second electrode through hole is substantially perpendicular to the first direction. Forming two second electrode through holes along a second direction, and forming the first electrode includes forming two first deflection electrodes facing each other along the first direction. And forming the second electrode may include forming two second deflection electrodes facing each other along the second direction.
[0012]
The step of forming the through hole for the first electrode includes the step of forming the through hole for the first electrode by removing the first layer by dry etching from the surface on the first layer side of the substrate, thereby forming the through hole for the second electrode. The forming step may include a step of forming the second electrode through hole by removing the second layer by dry etching from the rear surface on the second layer side of the substrate.
[0013]
The method further includes forming an insulating film on the inner walls of the first electrode through hole and the second electrode through hole by thermally oxidizing inner walls of the first electrode through hole and the second electrode through hole. May be.
[0014]
The first electrode forming step includes forming a first deflection electrode by embedding a metal paste in the first electrode through hole, and the second electrode forming step includes forming a metal paste in the second electrode through hole. May be included to form a second deflection electrode.
[0015]
According to a second aspect of the present invention, there is provided a deflector for deflecting a charged particle beam, comprising: a first layer, a second layer, and an insulating third layer provided between the first and second layers. A first substrate having a layer, a first deflection electrode unit formed in a first through hole penetrating the first layer, and a first deflection electrode unit separated from the first deflection electrode unit by a third layer and penetrating the second layer. 2) a second deflection electrode unit formed in the through hole. The first through hole and the second through hole may form a through hole through which the charged particles pass, and at least one of the first deflection electrode unit and the second deflection electrode unit may deflect the charged particle beam.
[0016]
The first deflection electrode unit may have a first deflection electrode having a predetermined shape, and the second deflection electrode unit may have a second deflection electrode having another predetermined shape. The first deflection electrode unit may have a cylindrical first deflection electrode, and the second deflection electrode unit may have two opposing second deflection electrodes. The first deflection electrode unit may include a cylindrical first deflection electrode whose diameter is larger than a distance between the two second deflection electrodes.
[0017]
A fourth layer, a fifth layer, and a sixth layer having an insulating sixth layer provided between the fourth layer and the fifth layer, wherein the second layer and the fourth layer are provided so as to face each other. A second substrate, a third deflection electrode unit formed in a third through hole penetrating the fourth layer, and a fourth layer separated from the third deflection electrode unit by the sixth layer and penetrating the fifth layer. May be further provided, and a fourth deflecting electrode unit formed on the second deflecting electrode unit and an electrode connecting portion for electrically connecting the second deflecting electrode unit and the third deflecting electrode unit.
[0018]
A first through-hole, a second through-hole, a third through-hole, and a fourth through-hole form a through-hole through which charged particles pass, and the first deflection electrode unit, the second deflection electrode unit, and the third deflection electrode unit. , And at least one of the fourth deflection electrode units may deflect the charged particle beam.
[0019]
The third deflecting electrode unit may include two opposing first deflecting electrodes, and the fourth deflecting electrode unit may include a cylindrical fourth deflecting electrode. The fourth deflection electrode unit may include a cylindrical fourth deflection electrode whose diameter is larger than a distance between the two third deflection electrodes.
[0020]
According to a third aspect of the present invention, there is provided an exposure apparatus for exposing a wafer with a charged particle beam, wherein the charged particle beam generator deflects the charged particle beam to irradiate a desired position with the charged particle beam. A first substrate having a first layer, a second layer, and an insulating third layer provided between the first and second layers; and a first layer. A first deflection electrode unit formed in a first through hole penetrating through the first layer, and a second deflection formed in a second through hole passing through the second layer and separated from the first deflection electrode unit by a third layer. And an electrode unit.
[0021]
According to a fourth aspect of the present invention, there is provided a method of manufacturing a deflector for deflecting a charged particle beam, wherein a first substrate preparing step of preparing a first substrate, and a first electrode through-hole is formed in the first substrate. A first electrode forming step of forming a first deflection electrode by embedding a conductive material in the first electrode through-hole, a second substrate preparing step of preparing a second substrate, and a second electrode forming step of forming a second electrode on the second substrate. A second electrode forming step of forming a through-hole for use in forming a second deflection electrode by embedding a conductive material in the through-hole for a second electrode; and bonding the first substrate and the second substrate together. And a bonding step of forming a bonding substrate having a second substrate and a through-hole forming a through-hole that exposes the first deflection electrode and the second deflection electrode and forms a through-hole through which the charged particle beam passes through the bonding substrate. Hole forming step.
[0022]
Forming a wiring through hole penetrating through the first substrate of the bonding substrate and connecting to the second deflection electrode from the surface of the bonding substrate, and forming a wiring wiring by embedding a conductive material in the wiring through hole; May be provided.
[0023]
In the first electrode forming step, two first electrode through-holes facing each other in the first direction are formed in the first substrate, and a conductive material is embedded in the two first electrode through-holes in the first direction. Forming two opposing first deflection electrodes in the second step. The second electrode forming step includes forming two second electrode through holes opposing each other in a second direction substantially perpendicular to the first direction. Forming on the substrate, embedding a conductive material in the two second electrode through holes, and forming two second deflection electrodes facing each other in the second direction; Bonding the first substrate and the second substrate such that the center of the one deflection electrode and the center of the two second deflection electrodes overlap. The step of forming a through hole includes the two first deflection electrodes and the two first deflection electrodes. The method may include forming a through-hole through which the second deflection electrode is exposed.
[0024]
A third substrate preparing step of preparing a third substrate, forming a third electrode through-hole in the third substrate, and embedding a conductive material in the third electrode through-hole to form a third deflection electrode. An electrode forming step, a fourth substrate preparing step of preparing a fourth substrate, forming a fourth electrode through-hole in the fourth substrate, and embedding a conductive material in the fourth electrode through-hole to form a fourth deflection electrode. A third electrode forming step, wherein the third electrode forming step includes forming two third electrode through holes facing each other in a third direction at an angle of approximately 45 degrees with the first direction. And burying a conductive material in the two third electrode through-holes to form two third deflecting electrodes facing each other in the third direction. Forming in the fourth substrate two through-holes for the fourth electrode opposed in a fourth direction substantially perpendicular to the direction of Embedding a conductive material in the through-hole for the fourth electrode to form two fourth deflecting electrodes facing each other in the fourth direction, the joining step comprising: The first substrate, the second substrate, the third substrate, and the fourth substrate are bonded so that the center of the two second deflection electrodes, the center of the two third deflection electrodes, and the center of the two fourth deflection electrodes overlap. Forming a through hole, wherein the forming of the through hole includes exposing two first deflection electrodes, two second deflection electrodes, two third deflection electrodes, and two fourth deflection electrodes. May be provided.
[0025]
The first electrode forming step includes forming a plurality of first deflecting electrode units including two first deflecting electrodes facing each other in a predetermined direction on a concentric circle at a predetermined angle, and the second electrode forming step includes: Forming a plurality of second deflecting electrode units including two second deflecting electrodes facing each other in a predetermined direction on a concentric circle at a predetermined angle, similarly to the plurality of first deflecting electrode units formed on the first substrate; The bonding step includes rotating the second substrate by a predetermined angle and bonding the first substrate and the second substrate, and the through-hole forming step includes two opposing first deflection electrodes and The method may include a step of forming a plurality of through-holes that expose the two opposing second deflection electrodes.
[0026]
A third substrate preparing step of preparing a third substrate, forming a third electrode through-hole in the third substrate, and embedding a conductive material in the third electrode through-hole to form a third deflection electrode. An electrode forming step, a fourth substrate preparing step of preparing a fourth substrate, forming a fourth electrode through-hole in the fourth substrate, and embedding a conductive material in the fourth electrode through-hole to form a fourth deflection electrode. And a fourth electrode forming step of forming a plurality of first deflecting electrode units including two first deflecting electrodes facing each other in a predetermined direction on a concentric circle at approximately 45 ° intervals. The second electrode forming step includes, like the plurality of first deflecting electrode units formed on the first substrate, the second deflecting electrode unit including two second deflecting electrodes facing each other in a predetermined direction. Are formed on the concentric circles at intervals of approximately 45 degrees. In the forming step, similarly to the plurality of first deflecting electrode units formed on the first substrate, the third deflecting electrode unit including the two third deflecting electrodes facing each other in the predetermined direction is concentrically formed approximately every 45 degrees. Forming a plurality of fourth deflection electrodes, wherein the fourth electrode formation step includes, similarly to the plurality of first deflection electrode units formed on the first substrate, a fourth deflection electrode including two fourth deflection electrodes facing each other in a predetermined direction. Forming a plurality of electrode units on the concentric circle at approximately 45 degrees, and in the joining step, rotating the second substrate by approximately 90 degrees, rotating the third substrate by approximately 45 degrees, and rotating the fourth substrate by approximately 135 degrees Rotating, bonding the first substrate, the second substrate, the third substrate, and the fourth substrate, wherein the step of forming a through-hole includes two first deflection electrodes, two second deflection electrodes, and two The third deflection electrode and the two fourth deflection electrodes are respectively exposed. It may have a step of forming a plurality of passing through holes.
[0027]
According to a fifth aspect of the present invention, there is provided a deflector for deflecting a charged particle beam, comprising: a first substrate, a second substrate bonded to the first substrate, and a passage penetrating the first substrate and the second substrate. A first deflection electrode unit having a first deflection electrode formed on an inner wall of the first substrate in the through hole, and a first deflection electrode unit formed on an inner wall of the second substrate in a through hole passing through the first substrate and the second substrate; A second deflection electrode unit having the first deflection electrode; and a second lead-out wire penetrating the first substrate and connected from the surface of the first substrate to the second deflection electrode.
[0028]
The first deflecting electrode unit deflects the charged particle beam passing through the passing through hole in a first direction, and the second deflecting electrode unit deflects the charged particle beam passing through the passing through hole into a second direction different from the first direction. May be deflected.
[0029]
The first deflection electrode unit has two first deflection electrodes facing each other in a first direction, and the second deflection electrode unit has two second deflection electrodes facing each other in a second direction substantially perpendicular to the first direction. It may have a deflection electrode.
[0030]
A third substrate bonded to the second substrate, a fourth substrate bonded to the third substrate, and a third substrate in a through hole passing through the first substrate, the second substrate, the third substrate, and the fourth substrate. A third deflecting electrode unit having a third deflecting electrode formed on an inner wall of the substrate, and a fourth substrate having an inner wall of a fourth substrate in a through hole passing through the first substrate, the second substrate, the third substrate, and the fourth substrate. A fourth deflection electrode unit having the formed fourth deflection electrode, a third extraction wiring penetrating the first substrate and the second substrate and connecting from the surface of the first substrate to the third deflection electrode; The semiconductor device may further include a second substrate and a third extraction wiring penetrating the third substrate and connected to the fourth deflection electrode from the surface of the first substrate.
[0031]
The first deflection electrode unit has two first deflection electrodes facing each other in a first direction, and the second deflection electrode unit has two second deflection electrodes facing each other in a second direction substantially perpendicular to the first direction. A third deflecting electrode unit, wherein the third deflecting electrode unit has two third deflecting electrodes facing each other in a third direction forming an angle of approximately 45 degrees with the first direction; May be provided in the fourth direction, which is a direction substantially perpendicular to the fourth direction.
[0032]
According to a sixth aspect of the present invention, there is provided an exposure apparatus for exposing a wafer with a charged particle beam, comprising: a charged particle beam generating unit for generating a charged particle beam; and a charged particle beam deflecting unit for irradiating a desired position. A first deflector formed on an inner wall of the first substrate in a through-hole that passes through the first substrate and the second substrate. A first deflection electrode unit having an electrode, a second deflection electrode unit having a first deflection electrode formed on an inner wall of the second substrate in a through hole penetrating the first substrate and the second substrate, and a first substrate And a second lead-out line extending from the surface of the first substrate to the second deflection electrode.
[0033]
Note that the above summary of the present invention does not list all of the necessary features of the present invention, and a sub-combination of these features may also be an invention.
[0034]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and all of the combinations of the features described in the embodiments are not limited thereto. It is not always essential to the solution of the invention.
[0035]
FIG. 1 shows an example of the configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 44 with an electron beam, and a control unit 140 for controlling the operation of each component included in the exposure unit 150.
[0036]
The exposure unit 150 generates a plurality of electron beams inside the lens barrel 8 and determines whether or not to irradiate the wafer 44 with the plurality of electron beams. An irradiation switching means 112 for independently switching for each electron beam, an electron optical system including a wafer projection system 114 for adjusting the direction and size of an image of a pattern transferred to the wafer 44, and a wafer 44 on which a pattern is to be exposed. A stage system having a wafer stage 46 on which the wafer stage 46 is mounted and a wafer stage driving unit 48 for driving the wafer stage 46;
[0037]
The electron beam shaping means 110 includes an electron beam generator 10 for generating a plurality of electron beams, a first shaping member 14 having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beams, and (2) a forming member 22, a first multi-axis electron lens 16 for independently focusing a plurality of electron beams and adjusting the focus of the electron beam, and irradiating a desired position with a plurality of electron beams passing through the first forming member 14 It has a first shaping deflecting unit 18 and a second shaping deflecting unit 20 that deflect independently as much as possible. The electron beam is an example of the charged particle beam of the present invention, and the electron beam generator 10 is an example of the charged particle beam generator of the present invention. The first shaping deflecting unit 18 and the second shaping deflecting unit 20 are examples of the deflector of the present invention.
[0038]
The electron beam generator 10 has a plurality of electron guns 104 and a base material 106 on which the electron guns 104 are formed. The electron gun 104 has a cathode 12 for generating thermoelectrons, and a grid 102 formed so as to surround the cathode 12 and for stabilizing thermoelectrons generated by the cathode 12. The electron beam generator 10 forms an electron gun array by having a plurality of electron guns 104 provided at predetermined intervals on a base material 106.
[0039]
It is desirable that the first molding member 14 and the second molding member 22 have a grounded metal film such as platinum on the surface irradiated with the electron beam. The cross-sectional shapes of the plurality of openings included in the first forming member 14 and the second forming member 22 may have a spread along the irradiation direction of the electron beam in order to efficiently pass the electron beam. Further, it is preferable that the plurality of openings included in the first molding member 14 and the second molding member 22 be formed in a rectangular shape.
[0040]
The irradiation switching means 112 independently focuses the plurality of electron beams and adjusts the focus of the electron beams, and independently irradiates the plurality of electron beams for each electron beam to irradiate a desired position. A blanking aperture array device 26 including a blanking aperture array device 26 for independently switching whether or not to irradiate the wafer 44 with an electron beam by deflecting the electron beam, and a plurality of through holes for passing the electron beam. And an electron beam shielding member 28 for shielding the electron beam deflected by 26. The blanking aperture array device 26 is an example of the deflector of the present invention.
[0041]
The blanking aperture array device 26 has a substrate provided with a through hole through which an electron beam passes, and a plurality of deflection electrodes provided in the through hole. Further, the cross-sectional shape of the plurality of openings included in the electron beam shielding member 28 may have a spread along the electron beam irradiation direction in order to allow the electron beam to pass efficiently.
[0042]
The wafer projection system 114 independently focuses the plurality of electron beams and reduces the irradiation diameter of the electron beam, and the third multi-axis electron lens 34, and independently focuses the plurality of electron beams to adjust the focus of the electron beam. A fourth multi-axis electron lens 36, a sub-deflection unit 38 which is an independent deflection unit for independently deflecting each electron beam so as to irradiate a plurality of electron beams to a desired position on the wafer 44, and focuses the electron beam. A coaxial lens 52 having a first coil 40 and a second coil 50 and functioning as an objective lens; and a common deflection for deflecting a plurality of electron beams by a desired amount in substantially the same direction to irradiate a desired position on the wafer 44. And a main deflecting unit 42 which is a unit. The sub deflection unit 38 is an example of the deflector of the present invention.
[0043]
The control unit 140 includes an overall control unit 130 and an individual control unit 120. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking aperture array control unit 86, a coaxial lens control unit 90, a sub deflection control unit 92, and a main deflection control unit. 94 and a wafer stage control unit 96. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
[0044]
The electron beam controller 80 controls the electron beam generator 10. The multi-axis electronic lens control unit 82 controls a current supplied to the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, and the fourth multi-axis electronic lens 36. The shaping / deflecting control unit 84 controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20. The blanking aperture array controller 86 controls the voltage applied to the deflection electrodes included in the blanking aperture array device 26. The coaxial lens control unit 90 controls a current supplied to the first coil 40 and the second coil 50 included in the coaxial lens 52. The main deflection control unit 94 controls a voltage applied to a deflection electrode included in the main deflection unit 42. The wafer stage control unit 96 controls the wafer stage drive unit 48 to move the wafer stage 46 to a predetermined position.
[0045]
The operation of the electron beam exposure apparatus 100 will be described. First, the electron beam generator 10 generates a plurality of electron beams. The electron beam generated by the electron beam generator 10 is applied to the first forming member 14 to be formed. The plurality of electron beams that have passed through the first forming member 14 each have a rectangular cross-sectional shape corresponding to the shape of the opening included in the first forming member 14.
[0046]
The first multi-axis electron lens 16 independently focuses a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second forming member 22 for each electron beam. The first shaping / deflecting unit 18 deflects a plurality of rectangular shaped electron beams to desired positions with respect to the second shaping member independently for each electron beam. The second shaping / deflecting unit 20 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 18 in a direction substantially perpendicular to the second shaping member 22 independently for each electron beam. As a result, the adjustment is performed so that the electron beam is applied to a desired position of the second molding member 22 substantially perpendicularly to the second molding member 22. The second forming member 22 including a plurality of openings having a rectangular shape is used to form a plurality of electron beams having a rectangular cross-sectional shape applied to each opening into a desired rectangular cross-sectional shape to be applied to the wafer 44. It is further shaped into an electron beam.
[0047]
The second multi-axis electron lens 24 independently focuses the plurality of electron beams, and independently adjusts the focus of the electron beam with respect to the blanking aperture array device 26 for each electron beam. The electron beam focused by the second multi-axis electron lens 24 passes through a plurality of through holes included in the blanking aperture array device 26.
[0048]
The blanking aperture array control unit 86 controls whether or not to apply a voltage to a deflection electrode provided in each through hole formed in the blanking aperture array device 26. The blanking aperture array device 26 switches whether or not to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode. When a voltage is applied to the deflection electrode, the electron beam that has passed through the through-hole of the blanking aperture array device 26 is deflected, cannot pass through the opening included in the electron beam shielding member 28, and does not irradiate the wafer 44. When no voltage is applied to the deflection electrode, the electron beam passing through the through-hole of the blanking aperture array device 26 is not deflected, can pass through the opening included in the electron beam shielding member 28, and is irradiated on the wafer 44. You.
[0049]
The third multi-axis electron lens 34 reduces the diameter of an electron beam that is not deflected by the blanking aperture array device 26 and passes the electron beam through an opening included in the electron beam shielding member 28. The fourth multi-axis electron lens 36 independently focuses the plurality of electron beams and independently adjusts the focus of the electron beam on the sub-deflection unit 38 for each electron beam.
[0050]
The sub-deflection control unit 92 controls the plurality of deflection electrode units included in the sub-deflection unit 38 independently. The sub-deflection unit 38 deflects a plurality of electron beams respectively incident on the plurality of deflection electrode units to a desired exposure position on the wafer 44 for each electron beam. The plurality of electron beams that have passed through the sub-deflection unit 38 are adjusted in focus on the wafer 44 by a coaxial lens 52 having a first coil 40 and a second coil 50, and are irradiated on the wafer 44.
[0051]
During the exposure processing, the wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 in a certain direction. The blanking aperture array control unit 86 determines the openings through which the electron beam passes based on the exposure pattern data, and performs power control on the deflection electrodes provided in each opening. In accordance with the movement of the wafer 44, the opening through which the electron beam passes is appropriately changed, and the electron beam is deflected by the main deflecting unit 42 and the sub-deflecting unit 38, thereby exposing the wafer 44 to a desired circuit pattern. It becomes possible.
[0052]
The electron beam exposure apparatus 100 is an example of the exposure apparatus of the present invention. Further, the exposure apparatus of the present invention may be an ion beam exposure apparatus that exposes a wafer with an ion beam. Further, the electron beam exposure apparatus 100 may generate a plurality of electron beams at a narrow interval, for example, an interval at which all the electron beams are irradiated on a region of one chip to be provided on the wafer.
[0053]
FIG. 2 shows an example of the configuration of the sub deflection unit 38. The sub-deflection section 38 includes an aperture section 160 provided with a plurality of through-holes through which an electron beam passes, and a deflection electrode pad 162 and a ground electrode pad 164 serving as connection sections with the sub-deflection control section 92 shown in FIG. Have. It is desirable that the aperture section 160 is disposed at the center of the sub deflection section 38. The deflection electrode pad 162 and the ground electrode pad 164 supply an electric signal supplied from the sub-deflection control unit 92 via a probe card, a pogo pin array, or the like to a deflection electrode provided in a through hole of the aperture unit 160.
[0054]
FIG. 3 shows an example of the configuration of the aperture section 160. The horizontal direction of the aperture section 160 is defined as the x-axis direction, and the vertical direction is defined as the y-axis direction. The x axis indicates the direction in which the wafer stage 46 moves the wafer 44 stepwise during the exposure processing, and the y axis indicates the direction in which the wafer stage 46 continuously moves the wafer 44 during the exposure processing. Specifically, with respect to the wafer stage 46, the y-axis is a direction in which the wafer 44 is scanned and exposed, and the x-axis is a stepwise exposure of the wafer 44 to expose an unexposed area of the wafer 44 after the scanning exposure. The direction to move.
[0055]
The aperture section 160 is provided with a through-hole 170 through which a plurality of electron beams should pass. The plurality of through-holes 170 are arranged so as to expose the entire scanning area. For example, the plurality of through-holes 170 are arranged so as to cover the entire area between the through-holes located at both ends in the x-axis direction. It is preferable that the through-holes 170 that are close to each other in the x-axis direction are arranged at regular intervals. At this time, the interval between the plurality of through-holes 170 is preferably set to be equal to or less than the maximum deflection amount at which the main deflection unit 42 deflects the electron beam.
[0056]
4, 5, 6, 7, 8, 9, 10, 11, 12, and 13 show the steps of the first example of the method for manufacturing the sub deflection unit 38. 4, 5, 6, 7, and 8 show an electrode forming process, FIGS. 9 and 10 show a wiring layer forming process, and FIGS. 11, 12, and 13 show a through-hole forming process. Is shown. 4 to 13, (a) shows a top view, (b) shows a bottom view, and (c) shows a cross-sectional view taken along the line AA 'of (a) and (b).
[0057]
FIG. 4 shows a substrate preparing step of preparing the substrate 200. The substrate 200 includes a first layer 202, a second layer 204, and an insulating third layer 206 provided between the first layer 202 and the second layer 204. The substrate 200 is a bonded wafer such as an SOI (Silicon On Insulator) having an insulating film interposed therebetween. The first layer 202 and the second layer 204 are, for example, silicon layers, and the third layer 206 is, for example, a silicon oxide film.
[0058]
FIG. 5 shows a step of forming a first electrode through hole 208 for forming a first electrode through hole 208 penetrating the first layer 202. In the step of forming the first electrode through hole, a resist mask or an oxide film mask having a pattern of the deflection electrode is formed on the surface of the substrate 200. Then, the first layer 202 is removed from the surface on the first layer 202 side of the substrate 200 by dry etching until the third layer 206 is exposed, using a resist mask or an oxide film mask and using the third layer 206 as an etching stopper. Thus, a first electrode through hole 208 is formed. As the dry etching, for example, the first electrode through-hole 208 may be formed by reactive ion etching (RIE), or the first electrode through-hole 208 may be formed by deep reactive ion etching (Deep RIE). Is also good. In this example, a plurality of first electrode through holes 208 for forming a plurality of deflection electrode units including eight deflection electrodes are formed. The first electrode through hole 208 has a portion where the deflection electrode main body is formed and a portion where the holding portion for holding the deflection electrode on the substrate 200 is formed.
[0059]
FIG. 6 shows a step of forming a second electrode through hole 210 for forming a second electrode through hole 210 penetrating the second layer 204. In the step of forming the second electrode through hole, a resist mask or an oxide film mask having a pattern of the deflection electrode is formed on the back surface of the substrate 200. Then, the second layer 204 is removed by dry etching from the back surface of the substrate 200 on the second layer 204 side using the resist mask or the oxide film mask and using the third layer 206 as an etching stopper until the third layer 206 is exposed. Thus, a second electrode through hole 210 is formed. As the dry etching, for example, the second electrode through-hole 210 may be formed by reactive ion etching (RIE), or the second electrode through-hole 210 may be formed by deep reactive ion etching (Deep RIE). Is also good. In this example, a plurality of second electrode through holes 210 for forming a plurality of deflection electrode units including eight deflection electrodes are formed. Further, the second electrode through hole 210 has a portion where the deflection electrode main body is formed and a portion where the holding portion for holding the deflection electrode on the substrate 200 is formed.
[0060]
FIG. 7 shows an insulating film forming step of forming an insulating film 212 on inner walls of the first electrode through hole 208 and the second electrode through hole 210. In the insulating film formation step, the substrate 200 is held in an oxygen gas at a high temperature of about 1000 ° C., and the inner walls of the first electrode through hole 208 and the second electrode through hole 210 and the front and back surfaces of the substrate 200 are thermally oxidized. By doing so, an insulating film 212 is formed. For example, when the first layer 202 and the second layer 206 are silicon layers, a silicon oxide film is formed as the insulating film 212. In another example, the insulating film 212 may be formed by a plasma enhanced chemical vapor deposition (CVD) method. The insulating film 212 is formed for the purpose of providing isolation between the first deflection electrode 214 and the first layer 202 and between the second deflection electrode 216 and the second layer 204.
[0061]
FIG. 8 shows a first electrode forming step of forming the first deflection electrode 214 and a second electrode forming step of forming the second deflection electrode 216. In the first electrode forming step, a conductive material is embedded in the first electrode through-hole 208 and heat treatment is performed to form the first deflection electrode 214. In the second electrode formation step, a conductive material is embedded in the second electrode through-hole 210 and heat treatment is performed to form the second deflection electrode 216. For example, in the first electrode forming step and the second electrode forming step, the first deflection electrode 214 and the second deflection electrode 216 are respectively formed by embedding a metal paste such as Au, Ag, Pt, Pd, or Cu as a conductive material. May be. Further, the first deflection electrode 214 and the second deflection electrode 216 are preferably made of, for example, Au, Pt, etc., which are nonmagnetic, have a high melting point, and are not easily oxidized. In another example, the first deflection electrode 214 and the second deflection electrode 216 may be formed by embedding a conductive material in the first electrode through hole 208 and the second electrode through hole 210 by electroless plating or electrolytic plating. Good.
[0062]
FIG. 9 shows a first wiring forming step of forming the first wiring 218 and the first deflection electrode pad 162a, and a second wiring forming step of forming the second wiring 220 and the second deflection electrode pad 162b. The first wiring 218 and the first deflection electrode pad 162a are electrically connected to the first deflection electrode 214, and the second wiring 220 is electrically connected to the second deflection electrode 216. In the first wiring layer forming step, a resist having a pattern of the first wiring 218 and the first deflection electrode pad 162a is formed on the surface of the substrate 200, a metal film is formed on the resist, and then the resist is removed. The first wiring 218 and the first deflection electrode pad 162a are formed. In the second wiring layer forming step, a resist having a pattern of the second wiring 220 and the second deflection electrode pad 162b is formed on the back surface of the substrate 200, a metal film is formed on the resist, and then the resist is removed. The second wiring 220 and the second deflection electrode pad 162b are formed. That is, the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b are formed by a lift-off process. For the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b, a metal film such as Au, Cu, Al, Ti, Ta, Mo, W, and Pt is formed. It is formed by this.
[0063]
In another example, a metal film is formed on the front surface and the back surface of the substrate 200, and the pattern of the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b is formed on the metal film. After forming the mask, the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b may be formed by etching the metal film through the mask. For example, the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b may be formed by etching the metal film by an ion milling method.
[0064]
FIG. 10 shows an insulating layer forming step of forming the insulating layer 222 and a conductive layer forming step of forming the conductive layer 224. In the step of forming the insulating layer, the insulating layer 222 is formed to cover the front and back surfaces of the substrate 200, that is, the first wiring 218, the first deflection electrode pad 162a, the second wiring 220, and the second deflection electrode pad 162b. The insulating layer 222 is made of, for example, SiO ₂ , SiN or the like. In the conductive layer formation step, the conductive layer 224 is formed by depositing a conductive material on the front and back surfaces of the substrate 200, that is, on the surface of the insulating layer 222. Grounding the conductive layer 224 during exposure can prevent the insulating layer 222 from being charged up by electrons scattered from the electron beam and affecting the electron beam deflection operation. Further, a shielding electrode may be formed between the deflection electrode units. By grounding the shield electrode during exposure, crosstalk between the deflection electrode units can be prevented. Note that the wiring layer including the first wiring 218 or the second wiring 220 and the insulating layer 222 may have a single-layer wiring structure or a multilayer wiring structure. With a multilayer wiring structure, crosstalk between wirings can be reduced.
[0065]
FIG. 11 shows an external layer removing step of removing the insulating film 212, the insulating layer 222, and the conductive layer 224. In the step of removing the outer layer, a resist mask having a pattern of the through-hole 170 and the first and second deflection electrode pads 162a and 162b is formed on the conductive layer 224. Then, the conductive layer 224, the insulating layer 222, and the insulating film 212 are removed by etching using a resist mask. An etching window for forming the through hole 170 and a window for the deflection electrode pad for exposing the first deflection electrode pad 162a and the second deflection electrode pad 162b are formed. For example, the conductive layer 224 is removed by an ion milling method, and the insulating layer 222 and the insulating film 212 are removed by reactive ion etching (RIE).
[0066]
FIG. 12 shows a step of forming a first through-hole for forming a through-hole in the first layer 202 and the second layer 204. In the first through-hole forming step, a resist mask having a pattern of the through-hole 170 is formed on the front and back surfaces of the substrate 200. Using a resist mask and using the third layer 206 as an etching stopper, the first layer 202 is removed from the surface of the substrate 200 by dry etching until the third layer 206 is exposed to form a part of the through-hole 170. I do. As the dry etching, for example, a part of the through-hole 170 may be formed by reactive ion etching (RIE), or a part of the through-hole 170 may be formed by deep reactive ionic etching (Deep RIE). Is also good.
[0067]
FIG. 13 shows a step of forming a second through-hole for forming a through-hole in the third layer 206. In the second through hole forming step, the third layer 206 and the insulating film 212 that are exposed inside a part of the through hole 170 formed in the first through hole forming step are removed by etching. For example, the third layer 206 and the insulating film 212 are removed by wet etching. Thereby, the first deflection electrode 214 and the second deflection electrode 216 are exposed, and a through-hole 170 through which the charged particle beam passes is formed in the substrate 200.
[0068]
The sub-deflection unit 38 manufactured by the above-described manufacturing method forms the first electrode through hole 208 and the second electrode through hole 210 from the front and back surfaces of the substrate 200, and forms the first electrode through hole 208 and the second electrode through hole 210. Since the first deflecting electrode 214 and the second deflecting electrode 216 are separately formed by burying a conductive material in the electrode through holes 210, a deflecting electrode having a high aspect ratio can be formed with high accuracy.
[0069]
FIG. 14 shows an example of a specific structure of the sub deflection unit 38. The sub-deflection unit 38 includes a through-hole 170 through which an electron beam passes, a substrate 200 having a groove 226 provided on an inner wall of the through-hole 170, and a through-hole 170 to deflect the electron beam. The first deflection electrode 214 is provided and at least a part thereof is embedded in the groove 226, and the insulating film 212 is provided between the substrate 200 and the portion of the first deflection electrode 214 embedded in the groove 226.
[0070]
The groove 226 has a shape that locks a portion of the first deflection electrode 214 embedded in the groove 226 in order to prevent the first deflection electrode 214 from separating from the substrate 200. Specifically, the maximum width of the portion of the first deflection electrode 214 embedded in the groove 226 in the cross section substantially perpendicular to the electron beam irradiation direction, that is, the thickness direction of the substrate 200 is larger than the width of the upper surface of the groove 226. Is also preferably large. It is preferable that the maximum width of the deflection electrode 214 inside the through-hole 170 is larger than the width of the upper surface of the groove 226. The upper surface of the groove 226 is an interface (contact surface) between the passage through hole 170 and the groove 226.
[0071]
The plurality of first deflection electrodes 214 are, for example, wedge-shaped, and are preferably provided so that the plurality of first deflection electrodes 214 overlap along the direction from the center of the through hole 170 to the side wall. That is, it is preferable that the plurality of first deflection electrodes 214 be provided so that the side wall of the through-hole is not exposed to the electron beam passing through the through-hole 170. Accordingly, it is possible to prevent the substrate 200 from being charged up by the electrons scattered from the electron beam during the exposure and affecting the electron beam deflection operation. The second deflecting electrode 216 may have the same structure as the first deflecting electrode 214, or may have a different structure.
[0072]
FIG. 15 shows a first example of the configuration of the sub deflection unit 38 and the sub deflection control unit 92. The sub deflection control unit 92 of the present example has a first deflection electrode unit including a plurality of first deflection electrodes 214 formed on the inner wall of the first layer 202 of the through hole 170 as a main system. The second deflecting electrode unit including a plurality of second deflecting electrodes 216 formed on the inner wall of the second layer 204 is used as a spare system to control the deflecting operation of the sub deflecting unit 38.
[0073]
The sub-deflection control unit 92 converts a digital signal indicating a voltage applied to each of the plurality of first deflection electrodes 214 and the plurality of second deflection electrodes 216 into a digital signal into an analog signal, and converts the analog signal output by the DAC 228 into a digital signal. An electrode switching circuit 230 for switching which of the first and second deflection electrodes 214 and 216 is to be supplied. The electrode switching circuit 230 supplies an analog signal to the first deflection electrode 214 via the first deflection electrode pad 162a, and supplies an analog signal to the second deflection electrode 216 via the second deflection electrode pad 162b.
[0074]
For example, usually, the electrode switching circuit 230 supplies an analog signal to the plurality of first deflection electrodes 214, and deflects the electron beam passing through the through hole 170 by the plurality of first deflection electrodes 214. When a failure occurs in any of the plurality of first deflection electrodes 214, the electrode switching circuit 230 supplies an analog signal to the plurality of second deflection electrodes 216, and passes through the plurality of second deflection electrodes 216. The electron beam passing through the hole 170 is deflected. Therefore, even if there is a failure in any of the plurality of first deflecting electrodes 214, it is possible to perform a desired deflecting operation without replacing the sub deflecting unit 38 or the like, so that the electron beam exposure apparatus 100 Maintainability can be improved.
[0075]
FIG. 16 shows a second example of the configuration of the sub deflection unit 38 and the sub deflection control unit 92. The sub-deflection control unit 92 of this example includes a first deflection electrode unit including a plurality of first deflection electrodes 214 formed on the inner wall of the first layer 202 of the through hole 170, and a second layer 204 of the through hole 170. And a second deflecting electrode unit including a plurality of second deflecting electrodes 216 formed on the inner wall of the first deflecting electrode unit as one deflecting electrode unit to control the deflecting operation of the sub deflecting unit.
[0076]
The sub deflection controller 92 converts a digital signal indicating a voltage applied to the plurality of first deflection electrodes 214 and the plurality of second deflection electrodes 216 into an analog signal into a plurality of DACs 228, and converts the analog signal output by the DAC 228 into a first signal. A branch circuit 232 branches into an analog signal supplied to the deflection electrode 214 and an analog signal supplied to the second deflection electrode 216. The electrode switching circuit 230 supplies an analog signal to the first deflection electrode 214 via the first deflection electrode pad 162a, and supplies an analog signal to the second deflection electrode 216 via the second deflection electrode pad 162b.
[0077]
The branch circuit 232 supplies the same analog signal to the first deflection electrode 214 and the second deflection electrode 216 provided corresponding to the same position in the cross section of the through-hole 170, and The two deflection electrodes 216 deflect the electron beam passing through the passage through hole 170 by the same deflection operation. Therefore, the first deflecting electrode 214 and the second deflecting electrode 216 can realize the same deflecting ability as a deflecting electrode having a very large aspect ratio.
[0078]
FIG. 17 shows a third example of the configuration of the sub deflection unit 38 and the sub deflection control unit 92. The sub-deflection control unit 92 of this example includes a first deflection electrode unit including a plurality of first deflection electrodes 214 formed on the inner wall of the first layer 202 of the through hole 170, and a second layer 204 of the through hole 170. And a second deflecting electrode unit including a plurality of second deflecting electrodes 216 formed on the inner wall of the first deflecting electrode unit as one deflecting electrode unit to control the deflecting operation of the sub deflecting unit.
[0079]
The sub deflection controller 92 includes a plurality of DACs 228 that convert digital signals indicating voltages applied to the plurality of first deflection electrodes 214 and the plurality of second deflection electrodes 216 into analog signals, and a DAC synchronization circuit that synchronizes the operation of the DAC 228. 234. The DAC 228 converts a digital signal into an analog signal based on the control of the DAC synchronization circuit 234, supplies the analog signal to the first deflection electrode 214 via the first deflection electrode pad 162a, and controls the second deflection electrode pad 162b. An analog signal is supplied to the second deflection electrode 216 via the second deflecting electrode 216.
[0080]
The DAC synchronization circuit 234 synchronizes the operations of the two DACs 228 that supply analog signals to the first deflection electrode 214 and the second deflection electrode 216 provided corresponding to the same position in the cross section of the through hole 170. The first deflection electrode 214 and the second deflection electrode 216 deflect the electron beam passing through the through hole 170 by the same deflection operation. Therefore, the first deflecting electrode 214 and the second deflecting electrode 216 can realize the same deflecting ability as a deflecting electrode having a very large aspect ratio.
[0081]
FIG. 18 shows another first example of the structure of the sub deflection unit 38. 18A shows a longitudinal sectional view, FIG. 18B shows a transverse sectional view taken along the line DD ′ of FIG. 18A, and FIG. 18C shows a transverse sectional view taken along the line EE ′ of FIG. Show. In FIG. 18, the same components as those of the sub-deflection unit 38 shown in FIGS. 4 to 17 are denoted by the same reference numerals, and the components denoted by the same reference numerals except for the parts described below. The materials and functions of the elements may be the same.
[0082]
The sub-deflection unit 38 of the present example includes a substrate 200 having a first layer 202, a second layer 204, and an insulating third layer 206 provided between the first layer 202 and the second layer 204; A first deflection electrode unit 215 formed in a first through hole 170 a penetrating the first layer 202, and a second through hole separated from the first deflection electrode unit 215 by the third layer 206 and penetrating the second layer 204 The second deflecting electrode unit 217 formed in the inside 170b and the insulating film 212 provided between the first layer 202 and the first deflecting electrode unit 215 and between the second layer 204 and the second deflecting electrode unit 217. A second wiring 220 electrically connected to the second deflection electrode 216; a second deflection electrode pad 162b electrically connecting the second wiring 220; and an insulating layer 222 provided on the back surface of the substrate 200. And the insulating layer 222 Having a conductive layer 224 provided on the surface, the first deflection electrode unit 215 is formed of a conductive material and a conductive layer 236 which is electrically connected. The first through-hole 170a and the second through-hole 170b form a through-hole 170 through which the electron beam passes, and at least one of the first deflection electrode unit 215 and the second deflection electrode unit 217 passes through the through-hole 170. To deflect the electron beam.
[0083]
The first deflection electrode unit 215 has a first deflection electrode 214 having a predetermined shape, and the second deflection electrode unit 217 has a second deflection electrode 216 having another shape having a predetermined shape. Specifically, the first deflection electrode unit 215 has a cylindrical first deflection electrode 214, and the second deflection electrode unit 217 has an eight-pole second deflection electrode including two opposing second deflection electrodes 216. It has an electrode 216. That is, the first deflection electrode unit 215 is a unipotential deflector, and the second deflection electrode unit 217 is an 8-pole deflector. Further, it is preferable that the first deflection electrode 214 has a cylindrical shape whose diameter is larger than a distance between two opposing second deflection electrodes 216. Accordingly, it is possible to prevent the electron beam deflected by the second deflection electrode unit 217 from colliding with the first deflection electrode 214 and being cut off. In addition, the first deflection electrode 214 is grounded via the conductive layer 236 during exposure. By grounding the first deflection electrode 214, crosstalk between the second deflection electrode units 217 can be prevented.
[0084]
Hereinafter, a method of manufacturing the sub deflector 38 of this example will be described. The sub-deflection section 38 of this example is manufactured by the same manufacturing method as that shown in FIGS. 4 to 13 except for the portions described below.
[0085]
In the step of forming the first electrode through-hole shown in FIG. 5, the first electrode through-hole 208 having a predetermined shape is formed. That is, the cylindrical first electrode through hole 208 is formed. In the step of forming the second electrode through hole shown in FIG. 6, the second electrode through hole 210 having a predetermined shape and another shape is formed. That is, eight second electrode through holes 210 including two opposing second electrode through holes 210 are formed. In the step of forming the second electrode through hole, it is preferable to form two second electrode through holes 210 spaced apart from each other by a diameter smaller than the diameter of the first electrode through hole 208.
[0086]
In the first electrode forming step shown in FIG. 8, a conductive material is buried in the first electrode through hole 208 formed in a predetermined shape, so that the first deflection electrode 214 having a predetermined shape, that is, a cylindrical shape is formed. To form Then, in the second electrode forming step shown in FIG. 8, a conductive material is buried in the second electrode through hole 210 formed in another shape, thereby forming another shape, that is, two opposing second deflection electrodes. Eight second deflection electrodes 216 including 216 are formed. In the second electrode formation step, it is preferable to form two second deflection electrodes 216 spaced apart from each other by a diameter smaller than the diameter of the first deflection electrode 214.
[0087]
FIG. 19 shows another second example of the structure of the sub deflection unit 38. 19, the same components as those of the sub-deflection unit 38 shown in FIGS. 4 to 18 are denoted by the same reference numerals, and the materials and functions of the components denoted by the same reference numerals are the same. May be.
[0088]
The sub-deflection section 38 of this example is provided in addition to the components of the sub-deflection section 38 shown in FIG. A substrate 244 having an insulating sixth layer 242, a third deflection electrode unit 246 formed in a third through hole 170 c penetrating the fourth layer 238, and a third deflection electrode unit 246 formed by the sixth layer 242. And the fourth deflection electrode unit 248 formed in the fifth through hole 170d penetrating through the fifth layer 240, between the fourth layer 238 and the third deflection electrode unit 246, and between the fifth layer 240 and the fifth layer 240. An insulating film 250 provided between the fourth deflection electrode unit 248, a conductive layer 252 provided on the back surface of the substrate 244, and a conductive layer formed of a conductive material and electrically connected to the fourth deflection electrode unit 248. Layer 254, second deflection And an electrode connecting portion 256 is a bump for electrically connecting electrode assembly 217 and a third deflecting electrode unit 246.
[0089]
The substrate 200 and the substrate 244 are provided such that the second layer 204 and the fourth layer 238 face each other. The first through-hole 170a, the second through-hole 170b, the third through-hole 170c, and the fourth through-hole 170d form a through-hole 170 through which the electron beam passes, and the first deflection electrode unit 215, the second deflection At least one of the electrode unit 217, the third deflection electrode unit 246, and the fourth deflection electrode unit 248 deflects the electron beam passing through the through hole 170.
[0090]
The fourth deflection electrode unit 248 has a cylindrical fourth deflection electrode 260, and the third deflection electrode unit 246 has an eight-pole third deflection electrode 258 including two opposing third deflection electrodes 258. That is, the fourth deflection electrode unit 248 is a unipotential deflector, and the third deflection electrode unit 246 is an 8-pole deflector. Further, it is preferable that the fourth deflecting electrode 248 has a cylindrical shape whose diameter is larger than a distance between two opposing third deflecting electrodes 258. Accordingly, the electron beam incident on the through hole 170 can be deflected by the third deflection unit 246 without being hit by the fourth deflection electrode 248 and blocked. The fourth deflection electrode 260 is grounded via the conductive layer 254 during exposure. By grounding the fourth deflection electrode 260, crosstalk between the third deflection electrode units 246 can be prevented.
[0091]
In addition, the electrode connection portion 256 electrically connects the second deflection electrode unit 217 and the third deflection electrode unit 246, so that the second deflection electrode unit 217 and the third deflection electrode unit 246 are connected via the second wiring 220. A voltage is applied. Then, the third deflecting electrode unit 217 and the third deflecting electrode unit 246 deflect the electron beam passing through the through hole 170 by the same deflecting operation. Therefore, the second deflecting electrode unit 217 and the third deflecting electrode unit 246 can realize the same deflecting capability as a deflecting electrode unit having a very large aspect ratio.
[0092]
The fourth layer 238 is the second layer 204, the fifth layer 240 is the first layer 202, the sixth layer 242 is the third layer 206, the substrate 244 is the substrate 200, and the third deflection electrode unit 246 is the second deflection electrode unit. The electrode unit 217, the fourth deflection electrode unit 248 is the first deflection electrode unit 215, the insulating film 250 is the insulating layer 212, the conductive layer 252 is the conductive layer 224, and the conductive layer 254 is the same material as the conductive layer 236. It may be a function or may be formed by the same method.
[0093]
4 to 19, the case where the sub-deflection unit 38 has a deflection electrode unit including an 8-pole deflection electrode has been described, but the sub-deflection unit 38 includes a 2-pole or 4-pole deflection electrode. It may have a deflection electrode unit. Further, the first shaping deflecting unit 18, the second shaping deflecting unit 20, and the blanking aperture array device 26 may have the same configuration as the sub-deflecting unit 38 shown in FIGS. It may have a deflecting electrode unit including four, four, or eight or more deflecting electrodes. Further, the shaping deflection control unit 84 and the blanking aperture array control unit 86 may have the same configuration as the sub deflection control unit 92 shown in FIGS.
[0094]
20 and 21 show an example of the structure of the blanking aperture array device 26. 20, (a) shows a top view, (b) shows a bottom view, and (a) shows a cross-sectional view taken along the line BB 'of FIG. 20, and (b) shows a cross-sectional view of FIG. 2 shows a cross-sectional view taken along line CC ′ of FIG. 20 and 21, the same reference numerals are given to the same components as those of the sub-deflection unit 38 shown in FIGS. 2 to 19, and the same reference numerals are given except for the parts described below. Materials and functions of the attached components may be the same.
[0095]
The blanking aperture array device 26 of this example includes a substrate 200 having a first layer 202, a second layer 204, and an insulating third layer 206 provided between the first layer 202 and the second layer 204. A first deflection electrode unit 215 formed in a first through hole 170 a penetrating the first layer 202, and a second deflection electrode unit 215 separated from the first deflection electrode unit 215 by the third layer 206 and penetrating the second layer 204. Insulation provided between the second deflection electrode unit 217 formed in the through hole 170b, the first layer 202 and the first deflection electrode unit 215, and between the second layer 204 and the second deflection electrode unit 217. The film 212, a first wiring 218 electrically connected to the first deflection electrode 214, a first deflection electrode pad 162a electrically connecting the first wiring 218, and an electrical connection to the second deflection electrode 216. Contact The second wiring 220, the second deflection electrode pad 162b for electrically connecting the second wiring 220, the insulating layer 222 provided on the front and back surfaces of the substrate 200, and the surface provided on the insulating layer 222. Conductive layer 224. The first through-hole 170a and the second through-hole 170b form a through-hole 170 through which the electron beam passes, and at least one of the first deflection electrode unit 215 and the second deflection electrode unit 217 passes through the through-hole 170. To deflect the electron beam.
[0096]
The first deflection electrode unit 215 has a first deflection electrode 214 provided at a predetermined position in the in-plane direction of the substrate 200, and the second deflection electrode unit 217 has a predetermined position in the in-plane direction of the substrate 200. It has a second deflection electrode 216 of another shape. Specifically, the first deflection electrode unit 215 has two first deflection electrodes 214 provided to face each other along the first direction, and the second deflection electrode unit 217 moves in the first direction. It has two second deflection electrodes 216 provided to face each other along a substantially vertical direction. The first deflection electrode unit 215 deflects the electron beam passing through the passage through hole 170 in a first direction, and the second deflection electrode unit 217 deflects the electron beam passing through the passage through hole 170 in a second direction. I do.
[0097]
Hereinafter, a method of manufacturing the blanking aperture array device 26 of the present example will be described. The blanking aperture array device 26 of this example is manufactured by the same manufacturing method as that of the sub-deflecting unit 38 shown in FIGS. 4 to 19 except for the parts described below.
[0098]
In the step of forming the first electrode through hole shown in FIG. 5, the first electrode through hole 208 is formed at a predetermined position in the in-plane direction of the substrate 200. Specifically, two first electrode through holes 208 are formed along the first direction. In the step of forming the second electrode through hole shown in FIG. 6, the second electrode through hole 210 is formed at another predetermined position in the in-plane direction of the substrate 200. Specifically, two second electrode through holes 210 are formed along a second direction substantially perpendicular to the first direction.
[0099]
In the first electrode forming step shown in FIG. 8, a conductive material is buried in the first electrode through hole 208 formed at a predetermined position, so that two first electrodes facing each other along the first direction are formed. A deflection electrode 214 is formed. Then, in the second electrode forming step shown in FIG. 8, a conductive material is buried in the second electrode through hole 210 formed at another position, so that two second electrodes facing each other in the second direction are formed. The deflection electrode 216 is formed.
[0100]
FIG. 22 shows an example of the configuration of the blanking aperture array controller 86 and the blanking aperture array device 26. The blanking aperture array controller 86 converts a digital signal indicating a voltage applied to the first deflection electrode 214 into an analog signal, and converts a digital signal indicating a voltage applied to the second deflection electrode 216 into an analog signal. DAC 228b. The DAC 228a supplies an analog signal to the first deflection electrode 214 via the first deflection electrode pad 162a, and the DAC 228b supplies an analog signal to the second deflection electrode 216 via the second deflection electrode pad 162b.
[0101]
The blanking aperture array control unit 86 of this example operates the DAC 228a and the DAC 228b independently, and sets the first deflection electrode unit 215 formed on the inner wall of the first layer 202 of the through hole 170 as the X direction blanker, The deflection operation of the blanking aperture array device 26 is controlled by using the second deflection electrode unit 217 formed on the inner wall of the second layer 204 of the through hole 170 as a Y-direction blanker.
[0102]
FIGS. 23, 24, 25, 26, 27, 28, 29, 30, 30, 31, 32, 33, and 34 show a second example of the method of manufacturing the sub-deflecting unit 38. Each step will be described. 23, 24, 25, 26, 27, and 28 show a substrate preparation stage and an electrode formation stage, FIGS. 29 and 30 show a bonding stage, and FIGS. 31 and 32 show a lead wiring formation stage. FIG. 33 shows a step of forming a through-hole, and FIG. 34 shows a step of forming a wiring layer. 23 to 34 except for FIG. 29, (a) shows a top view, and (b) shows a cross-sectional view taken along the line FF ′ of (a). In FIG. 29, (a), (b), (c), and (d) show top views.
[0103]
As shown in FIG. 23, first, a first substrate 300 is prepared. The first substrate 300 is, for example, a silicon substrate. Then, a resist mask 304 or an oxide film mask having a pattern of the first deflection electrode 302 is formed on the upper surface of the first substrate 300. Then, as shown in FIG. 24, the first substrate 300 is removed by dry etching using the resist mask 304 or the oxide film mask 304, and two first electrode through holes 306 facing each other in the first direction are formed. Then, the resist mask 304 is removed. As the dry etching, for example, the first electrode through-hole 306 may be formed by anisotropic dry etching such as reactive ion etching (RIE), or the first electrode may be formed by deep reactive ion etching (Deep RIE). A through hole 306 may be formed. In this example, two first electrode through holes 306 that face each other in the first direction for forming two deflection electrodes out of the eight deflection electrodes included in the deflection electrode unit are formed. Further, the first electrode through hole 306 has a portion where the deflection electrode main body is formed and a portion where the holding portion for holding the deflection electrode on the first substrate 300 is formed.
[0104]
Next, as shown in FIG. 25, an insulating film 308 is formed on the entire exposed surface of the first substrate 300, that is, on the upper and lower surfaces of the first substrate 300 and on the inner wall of the first electrode through hole 306. The insulating film 308 is formed by holding the first substrate 300 in an oxygen gas at a high temperature of about 1000 ° C. and thermally oxidizing the entire exposed surface of the first substrate 300. The insulating layer 308 is made of, for example, SiO ₂ , SiN or the like. In another example, the insulating film 308 may be formed by a plasma enhanced chemical vapor deposition (CVD) method. The insulating film 308 is formed for the purpose of isolating the first deflection electrode 302 from the first substrate 300.
[0105]
Next, as shown in FIG. 26, a metal plate 310 is bonded to the lower surface of the first substrate 300. If the adhesive remains at the bottom of the first electrode through hole 306, an activation process such as ashing or wet etching is performed to remove the adhesive. Then, as shown in FIG. 27, a first deflection electrode 302 is formed by embedding a conductive material in the first electrode through hole 306 by electrolytic plating using the metal plate 310 as a plating electrode. In this example, two deflection electrodes of the eight deflection electrodes included in the deflection electrode unit, that is, two first deflection electrodes 302 facing each other in the first direction are formed. Specifically, the first deflection electrode 302 is formed by plating Au, Ag, Pt, Pd, Cu, W, or the like as a conductive material. In addition, the first deflection electrode 302 is preferably formed of a material that is nonmagnetic, has a high melting point, and is hardly oxidized. In another example, the first deflection electrode 306 may be formed by bonding a support plate to the lower surface of the first substrate 300 instead of the metal plate 310 and embedding a metal paste of a conductive material.
[0106]
Next, as shown in FIG. 28, the metal plate 310 is peeled from the first substrate 300. For example, the metal plate 310 may be shaved by a dry process, or the metal plate 310 may be selectively etched by an etching solution by a wet process. Further, the metal plate 310 may be ground by mechanical polishing. The first substrate 300 on which the first deflection electrode 302 is formed as shown in FIG. 29A is generated by the substrate preparing step and the electrode forming step shown in FIGS.
[0107]
Further, the second substrate 314 on which the second deflecting electrode 312 as shown in FIG. 29B is formed by the same method as the substrate preparing step and the electrode forming step shown in FIGS. The third substrate 318 on which the third deflection electrode 316 is formed as shown in FIG. 29B and the fourth substrate 322 on which the fourth deflection electrode 320 is formed as shown in FIG. 29D are generated.
[0108]
That is, a second substrate 314 is prepared, a through-hole for a second electrode is formed in the second substrate 314, and a conductive material is embedded in the through-hole for a second electrode to form a second deflection electrode 312. Specifically, two second electrode through holes facing each other in a second direction substantially perpendicular to the first direction are formed in the second substrate 314, and a conductive material is filled in the two second electrode through holes. By embedding, two second deflection electrodes 312 facing each other in the second direction are formed. Further, a third substrate 318 is prepared, a through hole for a third electrode is formed in the third substrate 318, and a conductive material is embedded in the through hole for the third electrode to form a third deflection electrode 316. Specifically, two third electrode through-holes facing each other in the third direction that forms an angle of approximately 45 degrees with the first direction are formed in the third substrate 318, and the two third electrode through-holes are formed in the third substrate 318. By embedding a conductive material, two third deflection electrodes 316 facing in the third direction are formed. Also, a fourth substrate 322 is prepared, a fourth electrode through-hole is formed in the fourth substrate 322, and a conductive material is embedded in the fourth electrode through-hole to form the fourth deflection electrode 320. Specifically, two fourth electrode through holes facing each other in a fourth direction substantially perpendicular to the third direction are formed in the fourth substrate 322, and a conductive material is filled in the two fourth electrode through holes. By embedding, two fourth deflection electrodes 320 facing each other in the fourth direction are formed.
[0109]
Next, as shown in FIG. 30, the first substrate 300 and the second substrate 314 are bonded, the second substrate 314 and the third substrate 318 are bonded, and the third substrate 318 and the fourth substrate 322 are bonded. The bonding substrate 324 having the first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 is generated. Specifically, the center of the two first deflection electrodes 302, the center of the two second deflection electrodes 312, the center of the two third deflection electrodes 316, and the center of the two fourth deflection electrodes 320 overlap each other. As described above, the first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 are attached to each other.
[0110]
For example, the insulating film 308 formed on each surface of the first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 is made of SiO. ₂ In this case, the first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 are overlapped and bonded by being kept in an oxygen gas at about 1100 ° C. for about 2 hours. The first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 are isolated from each other by an insulating film 308 provided on each surface.
[0111]
Next, as shown in FIG. 31, a resist mask 332 having a pattern of the first extraction wiring 326, the second extraction wiring 328, and the third extraction wiring 330 is formed on the upper surface of the bonding substrate 324. Then, using the resist mask 332, the fourth substrate 322, the third substrate 318, and the second substrate 314 are removed from the upper surface of the bonding substrate 324 by etching to form a wiring through hole 334. As the etching, the wiring through-hole 334 may be formed by dry etching such as reactive ion etching (RIE) or deep reactive ion etching (Deep RIE), or wet etching using hydrogen fluoride (HF). The wiring through-hole 334 may be formed by etching.
[0112]
Specifically, the wiring through-hole 334 of the first extraction wiring 326 that penetrates through the fourth substrate 322, the third substrate 318, and the second substrate 314 and connects to the first deflection electrode 302 from the upper surface of the bonding substrate 324 is formed. Form. In addition, a wiring through hole 334 for the second extraction wiring 326 connected to the second deflection electrode 312 from the upper surface of the bonding substrate 324 is formed through the fourth substrate 322 and the third substrate 318. In addition, a through hole 334 for the third extraction wiring 328 that penetrates through the fourth substrate 322 and is connected to the third deflection electrode 318 from the upper surface of the bonding substrate 324 is formed. Then, an insulating film is formed on the surface of the wiring through-hole 334 by thermally oxidizing the inner wall of the wiring through-hole 334.
[0113]
Next, as shown in FIG. 32, a conductive material is buried in the wiring through hole 334 to form a first lead wiring 326, a second lead wiring 328, and a third lead wiring 330. For example, a conductive material such as In or Sb is buried in the wiring through hole 334 by a molten metal suction method to form the first lead wiring 326, the second lead wiring 328, and the third lead wiring 330. When the conductive material overflows from the wiring through hole 334, the upper surface of the bonding substrate 324 is planarized by mechanical polishing such as CMP.
[0114]
Next, as shown in FIG. 33, a resist mask having a pattern of the through-hole 336 is formed on the upper surface of the bonding substrate 324. Then, using a resist mask, the fourth substrate 322, the third substrate 318, the second substrate 314, and the first substrate 300 are removed from the upper surface of the bonding substrate 324 by etching, and the first substrate 300, the second substrate 314 are removed. , A through-hole 336 that penetrates through the third substrate 318 and the fourth substrate 322. Specifically, two first deflection electrodes 302 provided opposite each other on the first substrate 302, two second deflection electrodes 312 provided opposite each other on the second substrate 314, and each other opposes each other on the third substrate 318. The two third deflecting electrodes 316 provided and the two fourth deflecting electrodes 320 provided facing each other on the fourth substrate 322 are exposed to form a through-hole 336 through which the electron beam passes. As the etching, the through-hole 336 may be formed by dry etching such as reactive ion etching (RIE) or deep reactive ion etching (Deep RIE), or wet etching using hydrogen fluoride (HF). May form the through-hole 336.
[0115]
Next, as shown in FIG. 34, a wiring board 338 provided with a plurality of deflection electrode pads 162 is prepared. Then, the first deflecting electrode 302, the second deflecting electrode 312, the third deflecting electrode 316, and the fourth deflecting electrode 320 are connected to a plurality of deflecting electrode pads via an electrode connection portion 340 such as a bump or a BGA (Ball Grid Array). 162. The wiring board 338 is, for example, a printed board.
[0116]
The sub deflector 38 manufactured by the above-described manufacturing method includes a first substrate 300, a second substrate 314 bonded to the first substrate 300, a third substrate 318 bonded to the second substrate 314, and a third substrate 318. A fourth substrate 322 bonded to the substrate 318, a first deflection electrode unit including the first deflection electrode 302 formed on the inner wall of the first substrate 300 in the through-hole 336, and a second deflection electrode unit in the through-hole 336. A second deflection electrode unit including a second deflection electrode 312 formed on the inner wall of the substrate 314, and a third deflection electrode unit including a third deflection electrode 316 formed on the inner wall of the second substrate 318 in the through hole 336. And a fourth deflection electrode unit including a fourth deflection electrode 320 formed on the inner wall of the fourth substrate 322 in the through-hole 336.
[0117]
Further, the sub deflector 38 includes a first extraction wiring 326 that penetrates through the fourth substrate 322, the third substrate 318, and the second substrate 314 and connects from the upper surface of the bonding substrate 324 to the first deflection electrode 302. 322 and the third substrate 318, the second lead-out line 326 connected from the upper surface of the bonding substrate 324 to the second deflection electrode 312, and the fourth substrate 322 from the upper surface of the bonding substrate 324 to the third deflection electrode 318. And a third extraction wiring 328 connected thereto.
[0118]
The first deflection unit including the two first deflection electrodes 302 facing each other in the first direction deflects the electron beam passing through the through-hole 336 in the first direction. A second deflection electrode unit including two second deflection electrodes 312 facing each other in a second direction substantially perpendicular to the first direction deflects the electron beam passing through the through-hole 336 in the second direction. The third deflecting electrode unit including two third deflecting electrodes 316 opposed in the third direction forming an angle of approximately 45 degrees with the first direction converts the electron beam passing through the passage through hole 336 in the third direction. Deflect. The fourth deflecting electrode unit including two fourth deflecting electrodes 320 opposed in a fourth direction substantially perpendicular to the third direction deflects the electron beam passing through the passage through hole 336 in the fourth direction.
[0119]
The sub-deflection section 38 of this example is manufactured by forming deflection electrodes on a plurality of substrates and bonding the plurality of substrates by the above-described manufacturing method. Therefore, before bonding a plurality of substrates, by finding out and eliminating that the substrate cannot be used due to the occurrence of pits, voids, etc. inside the deflection electrode formed on the substrate, a deflection electrode that operates normally can be obtained. The sub-deflection unit 38 can be manufactured by bonding the formed substrates. Therefore, it is possible to reduce the possibility of manufacturing the sub-deflection unit 38 having the inoperative deflection electrode, so that the yield can be improved and the manufacturing cost can be reduced.
[0120]
FIGS. 35, 36, 37, 38, 39, 40, 41, and 42 show other examples of the substrate preparing step and the electrode forming step shown in FIGS. 35A to 42, (a) shows a top view, and (b) shows a cross-sectional view taken along the line FF ′ of (a). The same components as those of the sub-deflection unit 38 shown in FIGS. 23 to 34 are denoted by the same reference numerals, and the materials and components of the components denoted by the same reference numerals except for the parts described below. The functions may be the same.
[0121]
As shown in FIG. 35, first, a first substrate 300 is prepared. The first substrate 300 is, for example, a silicon substrate. Then, the insulating layer 342 is formed on the upper surface of the first substrate 300, and the insulating layer 344 is formed on the lower surface of the substrate 300. The insulating layer 342 is preferably thicker than the insulating layer 344. The insulating layers 342 and 344 are made of, for example, SiO ₂ It is formed by forming an insulating film such as.
[0122]
Next, as shown in FIG. 36, a resist mask 346 having a pattern of the first deflection electrode 302 is formed. Then, the insulating layer 342 is etched using the resist mask 346 to form a pattern of the first deflection electrode 302 on the insulating layer 342, thereby generating an oxide film mask. Then, as shown in FIG. 37, the first substrate 300 is removed by dry etching using an oxide film mask and using the insulating layer 344 as an etching stopper, so that two first electrode penetrations facing each other in the first direction are formed. A hole 306 is formed, and the insulating layer 342 serving as an oxide film mask is removed. As the dry etching, for example, the first electrode through-hole 306 may be formed by anisotropic dry etching such as reactive ion etching (RIE), or the first electrode may be formed by deep reactive ion etching (Deep RIE). A through hole 306 may be formed. In this example, two first electrode through holes 306 that face each other in the first direction for forming two deflection electrodes out of the eight deflection electrodes included in the deflection electrode unit are formed. Further, the first electrode through hole 306 has a portion where the deflection electrode main body is formed and a portion where the holding portion for holding the deflection electrode on the first substrate 300 is formed.
[0123]
Next, as shown in FIG. 38, an insulating film 348 is formed on the upper surface of the first substrate 300 and the inner wall of the first electrode through hole 306. The insulating film 348 is formed by holding the first substrate 300 in an oxygen gas at a high temperature of about 1000 ° C. and thermally oxidizing the entire exposed surface of the first substrate 300. The insulating film 348 is made of, for example, SiO ₂ , SiN or the like. In another example, the insulating film 348 may be formed by a plasma enhanced chemical vapor deposition (CVD) method. The insulating film 348 is formed for the purpose of achieving isolation between the first deflection electrode 302 and the first substrate 300.
[0124]
Next, as shown in FIG. 39, a metal layer 350 is formed on the surface of the insulating layer 344. For example, a conductive material is deposited on the insulating layer 344 by evaporation, sputtering, or the like, so that the metal layer 350 is formed. Then, as shown in FIG. 40, the insulating film 348 and the insulating layer 344 formed in the first electrode through hole 306 are removed so that the metal layer 350 is exposed in the first electrode through hole 306. . In order to prevent the insulating film 348 formed on the inner wall of the first electrode through hole 306 from being eroded, the first electrode through hole 306 is formed by reactive ion etching (RIE) having a large vertical anisotropy. Is preferred.
[0125]
Next, as shown in FIG. 41, the first deflection electrode 302 is formed by embedding a conductive material in the first electrode through hole 306 by electrolytic plating using the metal film 350 as a plating electrode. In this example, two deflection electrodes of the eight deflection electrodes included in the deflection electrode unit, that is, two first deflection electrodes 302 facing each other in the first direction are formed. Specifically, the first deflection electrode 302 is formed by plating Au, Ag, Pt, Pd, Cu, W, or the like as a conductive material. In addition, the first deflection electrode 302 is preferably formed of a material that is nonmagnetic, has a high melting point, and is hardly oxidized.
[0126]
Next, as shown in FIG. 42, the metal layer 350 is separated from the first substrate 300. For example, the metal layer 350 may be removed by a dry process, or the metal layer 350 may be selectively etched by an etching solution by a wet process. Further, the metal layer 350 may be cut by mechanical polishing.
[0127]
FIG. 43 shows another example of the bonding stage shown in FIGS. 29 and 30. In FIG. 43, (a), (b), (c), and (d) show top views. The same components as those of the sub-deflection unit 38 shown in FIGS. 23 to 34 are denoted by the same reference numerals, and the materials and components of the components denoted by the same reference numerals except for the parts described below. The functions may be the same.
[0128]
The first deflecting electrode 302, the second deflecting electrode 312, the third deflecting electrode 316, and the fourth deflecting electrode 320 were formed in the same manner as in the substrate preparing step and the electrode forming step shown in FIGS. A first substrate 300, a second substrate 314, a third substrate 318, and a fourth substrate 322 are generated.
[0129]
Specifically, the first substrate 300 is generated by forming a plurality of first deflection electrode units including two first deflection electrodes 302 facing each other in a predetermined direction at a predetermined angle on a concentric circle. Similarly to the plurality of first deflecting electrode units formed on the first substrate 300, the second deflecting electrode unit including two second deflecting electrodes 312 facing each other in a predetermined direction is concentrically arranged at predetermined angles. The second substrate 314 is generated by forming a plurality. Similarly to the plurality of first deflecting electrode units formed on the first substrate 300, the second deflecting electrode unit including two third deflecting electrodes 316 facing each other in a predetermined direction is concentrically arranged at predetermined angles. The third substrate 318 is generated by forming a plurality of the substrates. Similarly to the plurality of first deflecting electrode units formed on the first substrate 300, a fourth deflecting electrode unit including two fourth deflecting electrodes 320 facing each other in a predetermined direction is concentrically arranged at predetermined angles. The fourth substrate 322 is generated by forming a plurality. In this example, the above-mentioned predetermined angle is approximately 45 degrees.
[0130]
Next, as shown in FIG. 43 (a), the first substrate 300 is not rotated, and as shown in FIG. 43 (b), the second substrate 314 is rotated approximately twice the predetermined angle, approximately 90 degrees in this example. Then, the third substrate 318 is rotated by a predetermined angle as shown in FIG. 43 (c), approximately 45 degrees in this example, and the fourth substrate 322 is rotated by approximately three times the predetermined angle as shown in FIG. 43 (d). In this example, the rotation is made approximately 135 degrees. Then, the first substrate 300 and the second substrate 314 are bonded, the second substrate 314 and the third substrate 318 are bonded, the third substrate 318 and the fourth substrate 322 are bonded, and the first substrate 300 and the A bonding substrate 324 having a second substrate 314, a third substrate 318, and a fourth substrate 322 is generated. Specifically, the center of two opposing first deflection electrodes 302, the center of two opposing second deflection electrodes 312, the center of two opposing third deflection electrodes 316, and the two opposing fourth The first substrate 300, the second substrate 314, the third substrate 318, and the fourth substrate 322 are attached so that the center of the deflection electrode 320 overlaps.
[0131]
According to the manufacturing method of this example, the first substrate 300 on which the first deflection electrode 302 is formed, the second substrate 314 on which the second deflection electrode 312 is formed, and the third substrate 318 on which the third deflection electrode 316 is formed. And the fourth substrate 322 on which the fourth deflection electrode 320 is formed is the same, and each substrate can be generated by the same process, so that the manufacturing cost can be reduced.
[0132]
FIGS. 44 and 45 show another example of the through-hole forming step and the wiring layer forming step shown in FIGS. 44 and 45, (a) shows a top view, and (b) shows a cross-sectional view taken along the line FF 'of (a). The same components as those of the sub-deflection unit 38 shown in FIGS. 23 to 34 are denoted by the same reference numerals, and the materials and components of the components denoted by the same reference numerals except for the parts described below. The functions may be the same.
[0133]
As illustrated in FIG. 44, an insulating layer and a wiring layer 352 including a wiring are formed over the insulating film 308. The insulating layer of the wiring layer 352 is, for example, SiO 2 ₂ , SiN and the like. Then, a plurality of deflection electrode pads 162 are formed on the upper surface of the wiring layer 352. The plurality of deflection electrode pads 162 are electrically connected to the first deflection electrode 302, the second deflection electrode 312, the third deflection electrode 316, and the fourth deflection electrode 320 via the wiring of the wiring layer 352. The wiring of the wiring layer 352 and the deflection electrode pad 162 are formed of, for example, Au, Cu, Al, Ti, Ta, Mo, W, Pt, or the like.
[0134]
Next, as shown in FIG. 45, a resist mask having a pattern of the through-hole 336 is formed on the upper surface of the wiring layer 352. Then, using a resist mask, the wiring layer 352, the fourth substrate 322, the third substrate 318, the second substrate 314, and the first substrate 300 are removed from the upper surface of the bonding substrate 324 by etching, and the first substrate 300, A through-hole 336 that penetrates the second substrate 314, the third substrate 318, and the fourth substrate 322 is formed. Specifically, two first deflection electrodes 302 provided opposite each other on the first substrate 302, two second deflection electrodes 312 provided opposite each other on the second substrate 314, and each other opposes each other on the third substrate 318. The two third deflecting electrodes 316 provided and the two fourth deflecting electrodes 320 provided facing each other on the fourth substrate 322 are exposed to form a through-hole 336 through which the electron beam passes. As the etching, the through-hole 336 may be formed by dry etching such as reactive ion etching (RIE) or deep reactive ion etching (Deep RIE), or wet etching using hydrogen fluoride (HF). May form the through-hole 336.
[0135]
According to the manufacturing method of this example, the wiring layer including the first deflecting electrode 302, the second deflecting electrode 312, the third deflecting electrode 316, and the wiring for electrically connecting the fourth deflecting electrode 320 and the deflecting electrode pad 162. Since 352 is generated by a semiconductor process, the pitch between the deflecting electrodes is very narrow, and a small sub-deflecting unit 38 that cannot be mounted on a printed circuit board using bumps or thick wiring can be manufactured.
[0136]
As described above, the present invention has been described using the embodiment. However, the technical scope of the present invention is not limited to the scope described in the embodiment. Various changes or improvements can be added to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.
[0137]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to provide a method of manufacturing a deflector having excellent operation performance and operation efficiency, a deflector manufactured by the method, and an exposure apparatus including the deflector.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of an electron beam exposure apparatus 100.
FIG. 2 is a diagram showing a configuration of a sub deflection unit 38.
FIG. 3 is a diagram showing a configuration of an aperture unit 160.
FIG. 4 is a diagram showing an electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 5 is a view showing an electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 6 is a diagram showing an electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 7 is a diagram showing an electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 8 is a diagram showing an electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 9 is a diagram illustrating a wiring layer forming step of the method of manufacturing the sub deflection unit 38.
FIG. 10 is a diagram showing a wiring layer forming step of the method of manufacturing the sub deflection unit 38.
FIG. 11 is a view showing a through-hole forming step of the method of manufacturing the sub-deflection section 38.
FIG. 12 is a diagram illustrating a through-hole forming step of the method of manufacturing the sub deflection unit 38.
FIG. 13 is a diagram showing a through-hole forming step of the method of manufacturing the sub deflection unit 38.
FIG. 14 is a diagram showing a specific structure of a sub deflection unit 38.
FIG. 15 is a diagram illustrating a first example of a configuration of a sub deflection unit 38 and a sub deflection control unit 92.
16 is a diagram illustrating a second example of the configuration of the sub deflection unit 38 and the sub deflection control unit 92. FIG.
FIG. 17 is a diagram illustrating a third example of the configuration of the sub deflection unit 38 and the sub deflection control unit 92.
FIG. 18 is a diagram showing another first example of the structure of the sub deflection unit 38.
FIG. 19 is a diagram showing another second example of the structure of the sub deflection unit 38.
FIG. 20 is a diagram showing a structure of a blanking aperture array device 26.
FIG. 21 is a diagram showing a structure of a blanking aperture array device 26.
FIG. 22 is a diagram showing a configuration of a blanking aperture array control unit 86 and a blanking aperture array device 26.
FIG. 23 is a diagram showing a substrate preparing step and an electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 24 is a diagram illustrating a substrate preparation step and an electrode formation step of the method of manufacturing the sub deflection unit 38.
FIG. 25 is a diagram illustrating a substrate preparing step and an electrode forming step of the method of manufacturing the sub-deflecting unit 38.
FIG. 26 is a diagram illustrating a substrate preparing step and an electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 27 is a diagram illustrating a substrate preparing step and an electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 28 is a diagram illustrating a substrate preparing step and an electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 29 is a diagram illustrating a joining stage of the method of manufacturing the sub deflection unit 38.
FIG. 30 is a diagram illustrating a joining step of the method of manufacturing the sub deflection unit 38.
FIG. 31 is a diagram illustrating a lead wiring forming step of the method of manufacturing the sub deflection unit 38.
FIG. 32 is a diagram illustrating a lead wiring forming step of the method of manufacturing the sub-deflection unit 38;
FIG. 33 is a view illustrating a step of forming a through-hole in the method of manufacturing the sub-deflection unit 38.
FIG. 34 is a diagram showing a wiring layer forming step of the method of manufacturing the sub deflection unit 38.
FIG. 35 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 36 is a view illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 37 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 38 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 39 is a view showing another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 40 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub deflection unit 38.
FIG. 41 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 42 is a diagram illustrating another example of the substrate preparing step and the electrode forming step of the method of manufacturing the sub-deflection unit 38.
FIG. 43 is a view showing another example of the joining step of the method of manufacturing the sub deflection unit 38.
FIG. 44 is a view showing another example of the step of forming the through-hole and the step of forming the wiring layer in the method of manufacturing the sub deflection unit 38.
FIG. 45 is a diagram illustrating another example of the step of forming the through-hole and the step of forming the wiring layer in the method of manufacturing the sub-deflection unit 38.
[Explanation of symbols]
Reference numeral 8: lens barrel, 10: electron beam generator, 12: cathode, 14: first forming member, 16: first multi-axis electron lens, 18: first forming deflection Part, 20: second shaping deflection part, 22: second shaping member, 24: second multiaxial electron lens, 26: blanking aperture array device, 28: electron beam shielding member , 34: a third multi-axis electron lens, 36: a fourth multi-axis electron lens, 38: a sub-deflection unit, 40: a first coil, 42: a main deflection unit, 44 ... Wafer, 46: Wafer stage, 48: Wafer stage drive unit, 50: Second coil, 52: Coaxial lens, 80: Electron beam control unit, 82: Multi-axis electron Lens control unit, 84: Molding deflection control unit, 86: Blanking aperture array Control section, 90: coaxial lens control section, 92: sub deflection control section, 94: main deflection control section, 96: wafer stage control section, 100: electron beam exposure apparatus, 102 ..Grid, 104 ... electron gun, 106 ... substrate, 110 ... electron beam forming means, 112 ... irradiation switching means, 114 ... wafer projection system, 120 ... individual control , 130 ... Overall control unit, 140 ... Control unit, 150 ... Exposure unit, 160 ... Aperture unit, 162 ... Deflection electrode pad, 164 ... Ground electrode pad, 170 ... · Passing through hole, 200 ··· substrate, 202 ··· first layer, 204 ··· second layer, 206 ··· third layer, 208 ··· first electrode through hole, 210 ··· Second electrode through hole, 212: insulating film, 214: first deflection Pole, 215 ... first deflection electrode unit, 216 ... second deflection electrode, 217 ... second deflection electrode unit, 218 ... first wiring, 220 ... second wiring, 222 ... An insulating layer, 224, a conductive layer, 226, a groove, 228, a DAC, 230, an electrode switching circuit, 232, a branch circuit, 234, a DAC synchronous circuit, 236, Conductive layer, 238: fourth layer, 240: fifth layer, 242: sixth layer, 244: substrate, 246: third deflection electrode unit, 248: fourth deflection Electrode unit, 250 ... insulating layer, 252 ... conductive layer, 254 ... conductive layer, 256 ... electrode connection part, 258 ... third deflecting electrode, 260 ... fourth deflecting electrode, 300: first substrate, 302: first deflection electrode, 304: resist Mask, 306: first electrode through hole, 308: insulating film, 310: metal plate, 312: second deflection electrode, 314: second substrate, 316 ... third Deflecting electrode, 318: third substrate, 320: fourth deflecting electrode, 322: fourth substrate, 324: joining substrate, 326: first lead-out wiring, 328: second Lead wiring 330, third lead wiring 332, resist mask 334, wiring through hole 336, through through hole 338, wiring board 340, electrode connection part 342 ... insulating layer, 344 ... insulating layer, 346 ... resist mask, 348 ... insulating film, 350 ... metal layer, 352 ... insulating layer, 354 ... wiring layer

Claims (32)

A method of manufacturing a deflector for deflecting a charged particle beam,
A substrate preparing step of preparing a substrate having a first layer, a second layer, and an insulating third layer provided between the first layer and the second layer;
Forming a first electrode through hole for forming a first electrode through hole penetrating the first layer;
Forming a second electrode through hole for forming a second electrode through hole penetrating the second layer;
A first electrode forming step of forming a first deflection electrode by embedding a conductive material in the first electrode through hole;
A second electrode forming step of forming a second deflection electrode by burying a conductive material in the second electrode through hole. 2. The method of claim 1, further comprising forming a through-hole on the substrate, wherein the first deflection electrode and the second deflection electrode are exposed and a through-hole through which the charged particle beam passes is formed on the substrate. 3. Production method. The first electrode through hole forming step includes forming the first electrode through hole having a predetermined shape,
The step of forming the second electrode through hole includes forming the second electrode through hole having another shape other than the predetermined shape,
The first electrode forming step includes forming the first deflection electrode having the predetermined shape,
2. The method according to claim 1, wherein the forming the second electrode includes forming the second deflection electrode having the other shape. The step of forming the first electrode through hole includes the step of forming the cylindrical first electrode through hole,
The step of forming the second electrode through-hole includes forming two opposing second electrode through-holes,
Forming the first electrode includes forming the cylindrical first deflection electrode;
The method according to claim 3, wherein the forming the second electrode includes forming two opposing second deflection electrodes. Forming the second electrode through-hole includes forming two second electrode through-holes spaced apart from each other by a diameter smaller than the diameter of the first electrode through-hole;
The method of claim 4, wherein forming the second electrode comprises forming the two second deflection electrodes spaced apart from each other by a distance smaller than a diameter of the first deflection electrode. The first electrode through-hole forming step includes forming the first electrode through-hole at a predetermined position in an in-plane direction of the substrate,
Forming the second electrode through hole includes forming the second electrode through hole at another position of the predetermined position in an in-plane direction of the substrate;
The first electrode forming step includes forming the first deflection electrode formed at the predetermined position,
The method of claim 1, wherein the forming the second electrode comprises forming the second deflection electrode formed at the other position. The first electrode through-hole forming step includes forming two first electrode through-holes along a first direction,
The step of forming the through-hole for the second electrode includes the step of forming two through-holes for the second electrode along a second direction substantially perpendicular to the first direction,
The first electrode forming step includes a step of forming two first deflection electrodes facing each other along the first direction,
The method according to claim 6, wherein the forming the second electrode includes forming the two second deflection electrodes facing each other in the second direction. The step of forming the first electrode through hole includes the step of forming the first electrode through hole by removing the first layer by dry etching from a surface of the substrate on the first layer side,
The step of forming the through-hole for the second electrode may include a step of forming the through-hole for the second electrode by removing the second layer by dry etching from a rear surface of the substrate on the side of the second layer. The manufacturing method according to claim 1, wherein Forming an insulating film on the inner walls of the first electrode through-hole and the second electrode through-hole by thermally oxidizing inner walls of the first electrode through-hole and the second electrode through-hole; The method according to claim 1, further comprising a step. The first electrode forming step includes forming the first deflection electrode by embedding a metal paste in the first electrode through hole,
2. The method according to claim 1, wherein the forming the second electrode includes forming the second deflection electrode by embedding a metal paste in the through-hole for the second electrode. A deflector for deflecting a charged particle beam,
A first substrate having a first layer, a second layer, and an insulating third layer provided between the first layer and the second layer;
A first deflection electrode unit formed in a first through hole penetrating the first layer;
A deflector comprising: a second deflection electrode unit separated from the first deflection electrode unit by the third layer and formed in a second through-hole penetrating the second layer. The first through-hole and the second through-hole form a through-hole through which the charged particles pass,
The deflector according to claim 11, wherein at least one of the first deflection electrode unit and the second deflection electrode unit deflects the charged particle beam. The first deflection electrode unit has a first deflection electrode having a predetermined shape,
The deflector according to claim 11, wherein the second deflection electrode unit has a second deflection electrode having another shape other than the predetermined shape. The first deflection electrode unit includes the cylindrical first deflection electrode,
The deflector according to claim 13, wherein the second deflection electrode unit has two opposed second deflection electrodes. The deflector according to claim 14, wherein the first deflection electrode unit has the cylindrical first deflection electrode whose diameter is larger than a distance between the two second deflection electrodes. A fourth layer, a fifth layer, and an insulating sixth layer provided between the fourth layer and the fifth layer, such that the second layer and the fourth layer face each other. A second substrate provided;
A third deflection electrode unit formed in a third through hole penetrating the fourth layer;
A fourth deflection electrode unit separated from the third deflection electrode unit by the sixth layer and formed in a fourth through hole penetrating the fifth layer;
The deflector according to claim 11, further comprising: an electrode connection unit that electrically connects the second deflection electrode unit and the third deflection electrode unit. The first through-hole, the second through-hole, the third through-hole, and the fourth through-hole are formed with a through-hole through which the charged particles pass,
17. The apparatus according to claim 16, wherein at least one of the first deflection electrode unit, the second deflection electrode unit, the third deflection electrode unit, and the fourth deflection electrode unit deflects the charged particle beam. The deflector as described. The third deflection electrode unit has two first deflection electrodes facing each other,
17. The deflector according to claim 16, wherein the fourth deflection electrode unit has a cylindrical fourth deflection electrode. 17. The deflector according to claim 16, wherein the fourth deflection electrode unit has the cylindrical fourth deflection electrode having a diameter larger than a distance between the two third deflection electrodes. An exposure apparatus for exposing a wafer with a charged particle beam,
A charged particle beam generator that generates the charged particle beam,
A deflector for deflecting the charged particle beam to irradiate a desired position,
The deflector is
A first substrate having a first layer, a second layer, and an insulating third layer provided between the first layer and the second layer;
A first deflection electrode unit formed in a first through hole penetrating the first layer;
An exposure apparatus, comprising: a second deflection electrode unit separated from the first deflection electrode unit by the third layer and formed in a second through hole penetrating the second layer. A method of manufacturing a deflector for deflecting a charged particle beam,
A first substrate preparation step of preparing a first substrate;
Forming a first electrode through-hole in the first substrate, and forming a first deflection electrode by embedding a conductive material in the first electrode through-hole;
A second substrate preparation step of preparing a second substrate;
Forming a second electrode through hole in the second substrate, and forming a second deflection electrode by embedding a conductive material in the second electrode through hole;
Bonding the first substrate and the second substrate to form a bonding substrate having the first substrate and the second substrate;
Forming a through hole for exposing the first deflecting electrode and the second deflecting electrode and forming a through hole through which the charged particle beam passes in the bonding substrate. Production method. A lead-through for penetrating the first substrate of the joint substrate, forming a wiring through-hole from the surface of the joint substrate to the second deflection electrode, and forming a lead-out wiring by embedding a conductive material in the wiring through-hole; The method according to claim 21, further comprising a wiring forming step. The first electrode forming step includes: forming two first electrode through holes facing each other in a first direction in the first substrate; and embedding a conductive material in the two first electrode through holes. Forming the two first deflection electrodes facing each other in the first direction,
The second electrode forming step includes forming two of the second electrode through holes facing each other in a second direction substantially perpendicular to the first direction in the second substrate, and forming the two second electrode through holes. Embedding a conductive material in the hole to form two second deflection electrodes facing each other in the second direction,
The bonding includes bonding the first substrate and the second substrate such that the centers of the two first deflection electrodes and the centers of the two second deflection electrodes overlap;
22. The method of claim 21, wherein forming the through-hole includes forming the through-hole exposing the two first deflection electrodes and the two second deflection electrodes. A third substrate preparing step of preparing a third substrate;
Forming a third electrode through hole in the third substrate, and forming a third deflection electrode by embedding a conductive material in the third electrode through hole;
A fourth substrate preparing step of preparing a fourth substrate;
Forming a fourth electrode through-hole in the fourth substrate, forming a fourth deflection electrode by embedding a conductive material in the fourth electrode through-hole, and forming a fourth electrode.
Forming the third electrode through-holes facing each other in a third direction at an angle of approximately 45 degrees with the first direction in the third substrate; Embedding a conductive material in the through-hole for three electrodes to form two third deflection electrodes facing each other in the third direction,
The step of forming the fourth electrode includes forming two through-holes for the fourth electrode facing in a fourth direction substantially perpendicular to the third direction in the fourth substrate, and forming the two through-holes for the fourth electrode. Embedding a conductive material in the hole to form two fourth deflection electrodes facing each other in the fourth direction,
The joining is performed such that a center of the two first deflection electrodes, a center of the two second deflection electrodes, a center of the two third deflection electrodes, and a center of the two fourth deflection electrodes overlap. Bonding a first substrate, the second substrate, the third substrate, and the fourth substrate,
The step of forming the through-hole includes forming the through-hole through which the two first deflection electrodes, the two second deflection electrodes, the two third deflection electrodes, and the two fourth deflection electrodes are exposed. The method according to claim 23, comprising a step. The first electrode forming step includes a step of forming a plurality of first deflection electrode units including two first deflection electrodes facing each other in a predetermined direction on a concentric circle at a predetermined angle,
The second electrode forming step includes, similarly to the plurality of first deflection electrode units formed on the first substrate, a second deflection electrode unit including two second deflection electrodes facing each other in the predetermined direction. Forming a plurality of concentric circles for each of the predetermined angles,
The bonding step includes rotating the second substrate by the predetermined angle, and bonding the first substrate and the second substrate.
The step of forming the through-hole includes forming a plurality of through-holes that respectively expose the two opposing first deflection electrodes and the two opposing second deflection electrodes. 22. The production method according to 21. A third substrate preparing step of preparing a third substrate;
Forming a third electrode through hole in the third substrate, and forming a third deflection electrode by embedding a conductive material in the third electrode through hole;
A fourth substrate preparing step of preparing a fourth substrate;
Forming a fourth electrode through-hole in the fourth substrate, and forming a fourth deflection electrode by embedding a conductive material in the fourth electrode through-hole.
The first electrode forming step includes a step of forming a plurality of first deflection electrode units including two first deflection electrodes facing each other in a predetermined direction on a concentric circle substantially every 45 degrees,
The second electrode forming step includes, similarly to the plurality of first deflection electrode units formed on the first substrate, a second deflection electrode unit including two second deflection electrodes facing each other in the predetermined direction. Forming a plurality of concentric circles approximately every 45 degrees,
The third electrode forming step includes, similarly to the plurality of first deflection electrode units formed on the first substrate, a third deflection electrode unit including two third deflection electrodes facing each other in the predetermined direction. Forming a plurality of concentric circles approximately every 45 degrees,
The fourth electrode forming step includes, similarly to the plurality of first deflection electrode units formed on the first substrate, a fourth deflection electrode unit including two fourth deflection electrodes facing each other in the predetermined direction. Forming a plurality of concentric circles approximately every 45 degrees,
In the bonding step, the second substrate is rotated by approximately 90 degrees, the third substrate is rotated by approximately 45 degrees, the fourth substrate is rotated by approximately 135 degrees, and the first substrate, the second substrate, and the second substrate are rotated. Bonding a third substrate and the fourth substrate,
The passing through-hole forming step includes the plurality of passing through-holes exposing the two first deflection electrodes, the two second deflection electrodes, the two third deflection electrodes, and the two fourth deflection electrodes, respectively. 22. The method according to claim 21, further comprising the step of: A deflector for deflecting a charged particle beam,
A first substrate;
A second substrate bonded to the first substrate;
A first deflection electrode unit having a first deflection electrode formed on an inner wall of the first substrate in a through hole penetrating the first substrate and the second substrate;
A second deflection electrode unit having a first deflection electrode formed on an inner wall of the second substrate in a through hole penetrating the first substrate and the second substrate;
A deflector comprising: a second extraction wiring penetrating the first substrate and connected to the second deflection electrode from a surface of the first substrate. The first deflection electrode unit deflects the charged particle beam passing through the passage through hole in a first direction,
The deflector according to claim 27, wherein the second deflection electrode unit deflects the charged particle beam passing through the passage through-hole in a second direction different from the first direction. The first deflection electrode unit has two first deflection electrodes facing each other in a first direction,
28. The deflector according to claim 27, wherein said second deflection electrode unit has two said second deflection electrodes facing each other in a second direction substantially perpendicular to said first direction. A third substrate bonded to the second substrate;
A fourth substrate bonded to the third substrate,
A third deflection electrode unit having a third deflection electrode formed on an inner wall of the third substrate in the through hole penetrating the first substrate, the second substrate, the third substrate, and the fourth substrate; When,
A fourth deflection electrode unit having a fourth deflection electrode formed on an inner wall of the fourth substrate in the through hole penetrating the first substrate, the second substrate, the third substrate, and the fourth substrate; When,
A third lead-out wire penetrating the first substrate and the second substrate and connected to the third deflection electrode from a surface of the first substrate;
28. The semiconductor device according to claim 27, further comprising: a third lead-out wiring penetrating the first substrate, the second substrate, and the third substrate and connected to the fourth deflection electrode from a surface of the first substrate. The deflector as described. The first deflection electrode unit has two first deflection electrodes facing each other in a first direction,
The second deflection electrode unit includes two second deflection electrodes facing each other in a second direction substantially perpendicular to the first direction,
The third deflecting electrode unit includes two third deflecting electrodes facing each other in a third direction that forms an angle of approximately 45 degrees with the first direction,
31. The deflector according to claim 30, wherein the fourth deflecting electrode unit has two fourth deflecting electrodes facing each other in a fourth direction that is a direction substantially perpendicular to the third direction. An exposure apparatus for exposing a wafer with a charged particle beam,
A charged particle beam generator that generates the charged particle beam,
A deflector for deflecting the charged particle beam to irradiate a desired position,
The deflector is
A second substrate bonded to the first substrate;
A first deflection electrode unit having a first deflection electrode formed on an inner wall of the first substrate in a through hole penetrating the first substrate and the second substrate;
A second deflection electrode unit having a first deflection electrode formed on an inner wall of the second substrate in a through hole penetrating the first substrate and the second substrate;
An exposure apparatus, comprising: a second extraction wiring penetrating the first substrate and connected to the second deflection electrode from a surface of the first substrate.

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