JP2006013389A - Electrode using conductive film and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable the reduction of the thickness of a deflection electrode, easily densify an array, and lessen a possibility of charge up by the radiation of a charged particle beam. <P>SOLUTION: After a first opening 602 is formed in a substrate 601, and an insulating film 605 is formed on the surface of the opening; a conductive film 604 is formed on the insulating film. Afterwards, each of the conductive films 604 on the surfaces of the openings is separated. In the separation of the conductive films on the surfaces of the openings after a resin is filled in the first opening 602, a second opening 603 is formed at a position adjacent to the outside of the first opening 602, the insulating layer on the side of the first opening 602 is removed inside the second opening 603, and a side conductive film of the first opening 602 is removed inside the second opening 603. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electrode using a conductive film for deflecting a plurality of charged particle beams, and a method for manufacturing the electrode, and more particularly to an electron beam exposure apparatus and ion beam exposure used for exposure of a semiconductor integrated circuit or the like. The present invention relates to a charged particle beam exposure apparatus such as an apparatus.

  “Yasuda Hiroshi: Applied Physics 69, 1135 (1994)” is shown as an example of a multi-electron beam exposure apparatus that performs pattern drawing using multiple electron beams. FIG. 11 is a sectional view of a blanking aperture array used in the multi-electron beam exposure apparatus. In the blanking aperture array, apertures and deflectors are arranged in an array, and irradiation of a plurality of electron beams can be individually controlled.

  Here, in the figure, 51 indicates an opening, and 52 and 53 indicate first and second blanking electrodes, respectively. When the charged particle beam that has passed through the aperture is irradiated onto the sample, a ground potential signal is simultaneously applied to the first and second blanking electrodes 52 and 53, and when the sample is cut off, the first and second blanking are applied. Positive and negative potentials are simultaneously applied to the electrodes 52 and 53.

  Also, a blanking aperture array fabrication method was introduced in which a plurality of apertures are two-dimensionally formed at a predetermined interval in a semiconductor crystal substrate such as silicon, and a deflection electrode pair is formed around each aperture. ing.

Specifically, recesses corresponding to the blanking aperture array are formed on the surface of the silicon substrate, and after the deflection electrode is formed by plating adjacent to each recess, the substrate surface is used as a plating base. The conductive layer is removed, and then the silicon substrate is protected in a state where a part of the back surface is removed.
JP 09-245708 A Hiroshi Yasuda: Applied Physics 69, 1135 (1994)

However, the conventional deflection electrode has the following problems.
The deflection electrode is made by backfilling with gold plating. This electrode has a height of 40 μm and a width of about 18 μm, and the opening size at this time is 25 μm. If the plating width is reduced to further increase the density of the array, it may be difficult to backfill the gold plating due to an increase in the aspect ratio of the plating pattern.
Further, the conventional blanking aperture array has the following problems.

  An insulator such as a silicon oxide film is exposed in the vicinity of the deflection electrode. Therefore, when a charged particle beam is irradiated, charge-up is caused and there is a possibility of affecting the charged particle beam passing through the aperture. For this reason, appropriate deflection and position control of the charged particle beam are not performed, and it may be difficult to expose the wafer with high accuracy.

  In the present invention, the thickness of the deflection electrode can be reduced, the array can be easily densified, the exposed portion of the insulator in the deflector can be reduced, and the possibility of charge-up by irradiation with charged particle beams is possible. It is an object of the present invention to provide an electrode using a conductive film and a method for forming the same, which can lower the thickness of the film and can obtain a stable operation.

  To achieve the above object, the present invention provides an opening forming step of forming a first plurality of openings in a substrate, an insulating film forming step of forming an insulating film on the surface of the plurality of openings, A conductive film forming step of forming a conductive film on the insulating film; and a conductive film separation step of separating the conductive films on the surface of the plurality of apertures into at least two or more for each aperture. An electrode manufacturing method is provided.

  In the conductive film separating step, a resin filling step of filling the plurality of openings with resin, and an opening for forming a second plurality of openings at adjacent positions outside the first plurality of openings. Forming in the second plurality of apertures, removing the insulating layer on the side surfaces of the first plurality of apertures exposed in the second plurality of apertures, and in the second plurality of apertures And a side-surface conductive film removal step of removing the side-surface conductive film of the first plurality of openings that is exposed.

  Further, in the step of filling the resin in the opening, the resin may be filled by a squeegee method, and the conductive film forming step may include an electroless plating method.

  In addition, the present invention is a method for manufacturing a deflector array structure for a charged particle beam, wherein any one of the above-described electrode manufacturing methods is used.

  The present invention also provides an opening forming step of forming a first plurality of openings in a substrate, an insulating film forming step of forming an insulating film on a surface of the plurality of openings, and a conductive film on the insulating film. The electrode may be manufactured by a conductive film forming step for forming the conductive film and a conductive film separation step for separating the conductive films on the surface of the plurality of apertures into at least two or more for each aperture. The conductive film preferably includes an electrode part and a wiring part connected to the electrode part, and a part of the separated conductive film is electrically grounded to form a shield electrode. May be a feature.

  Further, the present invention may be a deflector array structure that deflects a plurality of charged particle beams and is constituted by the above-described electrodes.

  The exposure apparatus according to the present invention is an exposure apparatus that exposes a pattern to an exposure target with a plurality of charged particle beams, and controls the exposure of the plurality of charged particle beams by controlling trajectories of the plurality of charged particle beams. A deflector array structure for individually controlling irradiation of an object is provided, and the deflector array structure is the deflector array structure.

  The present invention can also be applied to a device manufacturing method comprising a step of exposing an exposure target using the exposure apparatus and a step of developing the exposed exposure target.

  As described above, according to the present invention, it is possible to reduce the thickness of the deflection electrode, and it is easy to increase the density of the array. Further, since the deflector reduces the exposed portion of the insulator, the possibility of charge-up due to irradiation with a charged particle beam can be reduced, and stable operation can be expected. Further, by using the deflector array structure in a charged particle beam exposure apparatus, a highly reliable exposure apparatus can be provided.

  Embodiments of the present invention will be described in detail with reference to the drawings by way of examples.

(Formation method of thin film electrode)
A method for forming a thin film electrode will be described with reference to FIGS. 1-1 (A) to (F), FIGS. 1-2 (G) to (J), and FIGS. 1-3 (K) to (O). For example, the thin film electrode is formed by the steps shown in the following (1) to (15).

  (1) For example, a silicon substrate is prepared as the thin film electrode substrate 201. For example, a thickness of 200 μm is used. The thickness of the substrate 201 is an important factor that determines the deflection sensitivity. Next, for example, a silicon dioxide insulating film 202 having a film thickness of 1.5 μm is formed on the front and back surfaces of the substrate 201 using a thermal oxidation method (FIG. 1-1A).

(2) Photolithography is performed to form an etching mask resist pattern on the surface of the substrate 201 (not shown). Next, reactive ion etching using a gas such as CF ₄ or CHF ₃ is performed to etch the silicon dioxide insulating film 202. Thereafter, reactive ion etching using inductively coupled plasma and a BOSCH process is performed on the silicon substrate to expose the silicon dioxide on the back surface of the silicon substrate 201, thereby forming the first opening 203 (FIG. 1-1). (B)).

  (3) The silicon dioxide on the front and back surfaces of the substrate 201 is removed using a buffered hydrofluoric acid aqueous solution (not shown). Thereafter, silicon dioxide having a thickness of 1.5 μm is formed as the insulating film 204 on the front and back surfaces of the substrate 201 and the sidewalls of the openings 203 by using, for example, a thermal oxidation method (FIG. 1-1C).

  (4) On the front and back surfaces of the substrate 201 and the sidewalls of the openings 203, for example, chromium is deposited to a thickness of 0.05 μm as the adhesion layer 205 using a sputtering method. A gold thin film having a thickness of 0.3 μm is continuously formed. Thereafter, a gold thin film having a thickness of 2 μm is formed on the gold thin film using, for example, an electroless plating method to form a conductive thin film 206 (FIG. 1-1D).

  (5) The resist pattern 207 embedded in the first opening 203 is filled with, for example, a negative resist by a squeegee method, exposed, baked, and the resist remaining on the front and back surfaces of the substrate 201 is etched back. It is formed by removing (FIG. 1-1 (E)). This resist pattern 207 has removal selectivity with a positive resist described later.

  (6) Photolithography is performed on the surface of the substrate 201 using a positive resist to form a resist pattern 208 as an etching mask. Next, the gold thin film of the conductive thin film 206 and the chromium thin film of the adhesion film 205 are etched by dry etching, and the conductive thin film 206 and the adhesion film 205 on the substrate surface are patterned. As a result, the pattern formed by the conductive thin film 206 and the adhesion film 205 on the substrate surface is separated (FIG. 1-1 (F)).

  (7) The resist pattern on the surface of the substrate 201 is removed using, for example, acetone and isopropyl alcohol (not shown). Thereafter, photolithography is performed on the back surface of the substrate 201 using a positive resist to form a resist pattern 209 as an etching mask. Next, the gold thin film of the conductive thin film 206 and the chromium film of the adhesion film 205 are etched by dry etching, and the conductive thin film 206 and the adhesion film 205 on the back surface of the substrate 201 are patterned. Thereby, the pattern formed by the conductive thin film 206 and the adhesion film 205 on the surface of the substrate 201 is separated (FIG. 1-2G).

(8) The resist pattern on the back surface of the substrate 201 is removed using, for example, acetone and isopropyl alcohol (not shown). Thereafter, photolithography is performed on the back surface of the substrate 201 using a positive resist to form a resist pattern 210 as an etching mask. Next, reactive ion etching using a gas such as CF ₄ or CHF ₃ is performed to etch the silicon dioxide in the insulating film 204 on the back surface of the substrate 201 to expose the silicon (FIG. 1-2 (H)).

(9) The resist pattern on the back surface of the substrate 201 is removed using, for example, acetone and isopropyl alcohol (not shown). Thereafter, photolithography is performed on the back surface of the substrate 201 using a positive resist to form a resist pattern 211. Thereafter, photolithography is performed on the surface of the substrate 201 using a positive resist to form a resist pattern 212. Next, reactive ion etching using a gas such as CF ₄ or CHF ₃ is performed to etch the silicon dioxide in the insulating film 204 on the surface of the substrate 201 to expose the silicon (FIG. 1-2 (I)).

  (10) Reactive ion etching is performed on the silicon substrate using inductively coupled plasma and a BOSCH process to form second openings 213 in the silicon substrate (FIG. 1-2 (J)).

(11) The silicon on the side surface of the second opening 213 is etched using, for example, isotropic etching using XeF ₂ gas to expose the silicon dioxide in the insulating film 215 on the side surface of the first opening 203 ( Fig. 1-3 (K)).

  (12) The silicon dioxide of the insulating film 215 on the side surface of the first opening 203 exposed on the side surface of the second opening 213 is etched using, for example, a buffered hydrofluoric acid aqueous solution, and the second opening The chromium film of the adhesion film 216 on the side surface of 213 is exposed (FIG. 1-3 (L)).

  (13) The chromium film of the adhesion film 216 on the side surface of the first opening 203 exposed on the side surface of the second opening 213 is wet-etched with a mixed aqueous solution of ceric ammonium cerium nitrate and perchloric acid to form a conductive thin film The gold thin film 217 is exposed (FIG. 1-3 (M)).

  (14) The gold thin film of the conductive thin film 217 on the side surface of the first opening 203 is wet-etched to expose the buried resist portion 207. Thereby, a thin film electrode is isolate | separated (FIGS. 1-3 (N)).

  (15) The resist pattern 211 on the back surface of the substrate 201 and the resist pattern 212 on the substrate surface are removed using, for example, acetone and isopropyl alcohol. Next, the negative resist 207 filled in the first opening 204 is removed by, for example, a resist stripping solution (FIG. 1-3 (O)).

  In FIG. 2, the plane cross section of the conductive thin film electrode formed with the formation method of Example 1 is shown. This is a cross-sectional view taken along the line A-A 'of FIG. Conductive thin film electrodes 224A and 224B separated into two by the second opening 223 are formed on the side wall of the first opening 222 formed in the substrate 221. The conductive thin film electrodes 224A and 224B are electrically separated from the substrate 221 by the insulating film 225.

  FIG. 3 is a top view showing a deflector 301 formed of the conductive thin film electrode of FIG. The thin film electrodes in FIG. 3 are connected to the wirings 302A and 302B. By applying a desired voltage from outside to these wirings, the charged particle beam passing through the aperture 304 can be deflected.

The deflector 301 shown in FIG. 3 has shield electrodes 303A and 303B made of a conductive thin film installed on the ground. Thereby, since the exposure of the silicon dioxide 305 is reduced, it is possible to reduce the influence on the charged particle beam passing through the opening 304 when the charged particle beam is irradiated.

  Further, the deflector 301 of the present embodiment may be a deflector array as a configuration in which the deflector 301 is arranged in an array on the same substrate.

  4 is a cross-sectional view taken along the line AA 'of FIG. The deflector 401 has conductive thin film electrodes 404A and 404B on the side wall of the opening 403 formed in the substrate 402 and on the upper and lower surfaces of the substrate 402. The conductive thin film electrodes 404A and 404B are electrically insulated from the substrate 402 by an insulating film 405.

  FIG. 5 is a cross-sectional view taken along the line BB ′ of FIG. In the deflector 501, the conductive thin film electrodes 404 </ b> A and 404 </ b> B in FIG. 4 are separated by the opening 503 formed in the substrate 502. Further, the shield electrode 504 made of a conductive thin film on the front and back surfaces of the substrate is connected to the ground and is electrically insulated from the substrate 502 by the insulating film 505.

  6 shows a cross section of a conductive thin film electrode formed by the forming method of Example 1. FIG. This is a cross-sectional view taken along the line A-A ′ of FIG. On the side wall of the first opening 602 formed in the substrate 601, the conductive thin film electrode 604 separated into four by the second opening 603 is formed. The conductive thin film electrode 604 is electrically insulated from the substrate 601 by the insulating film 605.

(Description of components of electron beam exposure apparatus)
Embodiment 2 according to the present invention shows an example of an electron beam exposure apparatus using the deflector array structure of charged particle beams described in Embodiment 1 as a blanker array. Note that the present invention is not limited to electron beams and can be similarly applied to an exposure apparatus using an ion beam.

  7A and 7B are schematic views of the main part of an electron beam exposure apparatus according to Embodiment 2 of the present invention, in which FIG. 7A is an elevation view and FIG. 7B is a plan view. FIG. 8 is a view for explaining an electron optical system for each column of the exposure apparatus of FIG.

  In FIG. 8, reference numeral 1 denotes a multi-source module that forms a plurality of electron images and emits an electron beam from the electron source images. The multi-source modules 1 are arranged in 3 × 3, and details thereof will be described later.

  21, 22, 23, and 24 are magnetic lens arrays, and magnetic disks MD having apertures of the same shape arranged in 3 × 3 are vertically arranged at intervals, and a common coil CC It is excited by. As a result, each aperture portion becomes a magnetic pole of each magnetic lens ML1 to ML4, and a lens magnetic field is generated by design.

  A plurality of electron source images of each multi-source module 1 are projected onto the wafer 4 by the corresponding four magnetic field lenses (ML1, ML2, ML3, ML4) of the magnetic lens arrays 21, 22, 23, 24. An optical system that acts on an electron beam before the electron beam from one multi-source module irradiates the wafer is defined as a column. That is, the present embodiment has a configuration of 9 columns (col. 1 to col. 9).

At this time, images of a plurality of electron sources are formed once by two magnetic field lenses corresponding to the magnetic lens array 21 and the magnetic field lens array 22, and then the images are formed into the magnetic field lens array 23 and the magnetic field lens array 24. Are projected onto the wafer 4 by the two corresponding magnetic lenses. The excitation characteristics of the magnetic lens arrays 21, 22, 23, and 24 are individually controlled by the common coil CC, so that the optical characteristics (focal position, image rotation, magnification) of each column are substantially uniform. In other words, the same amount can be adjusted.

  A main deflector 3 deflects a plurality of electron beams from the multi-source module 1 to displace a plurality of electron source images in the X and Y directions on the wafer 4.

  Reference numeral 5 denotes a stage on which the wafer 4 is placed and is movable in the XY axis direction orthogonal to the optical axis AX (Z axis) and the rotation direction around the Z axis, and the stage reference plate 6 is fixed.

  Reference numeral 7 denotes a reflected electron detector that detects reflected electrons generated when a mark on the stage reference plate 6 is irradiated by an electron beam.

  Next, FIG. 8 is a detailed view of one column, and the function for adjusting the optical characteristics of the electron beam irradiated from the multi-source module 1 onto the wafer 4 will be described with reference to FIG.

  Reference numeral 101 denotes an electron source (crossover image) formed by the electron gun. The electron beam emitted from the electron source 101 becomes a substantially parallel electron beam by the condenser lens 102. The condenser lens 102 of the present embodiment is an electrostatic lens composed of three aperture electrodes.

  Reference numeral 103 denotes an aperture array in which the holes are two-dimensionally arranged. Reference numeral 104 denotes a deflector array formed by two-dimensionally arraying electrostatic lenses having the same optical power. Reference numeral 107 denotes a blanker array formed by two-dimensionally arraying electrostatic octupole deflectors that can be individually driven. In the second embodiment, the polarizer described is used as a blanker. In this embodiment, a blanker array is formed.

  Each function will be described with reference to FIG. The substantially parallel electron beam from the condenser lens 102 is divided into a plurality of electron beams by the aperture array 103. The divided electron beam forms an intermediate image of the electron source on the corresponding blanker of the blanker array 107 via the electrostatic lens of the corresponding lens array 104.

  At this time, the deflector arrays 105 and 106 individually adjust the position of the intermediate image of the electron source (the position in the plane orthogonal to the optical axis) on the blanker array 107. Further, since the electron beam deflected by the blanker array 107 is blocked by the blanking aperture AP of FIG. 8, the wafer 4 is not irradiated. On the other hand, the electron beam deflected by the blanker array 107 is irradiated on the wafer 4 because it is not blocked by the blanking aperture AP of FIG.

  Returning to FIG. 8, a plurality of intermediate images of the electron source formed by the multi-source module 1 are projected onto the wafer 4 through two magnetic field lenses corresponding to the magnetic field lens array 21 and the magnetic field lens array 22.

  At this time, among the optical characteristics when a plurality of intermediate images are projected onto the wafer 4, the rotation and magnification of the image can be adjusted by the deflector arrays 104 and 105 that can adjust the position of each intermediate image on the blanker array. The focal position can be adjusted by dynamic focus lenses (electrostatic or magnetic field lenses) 108 and 109 provided for each column.

Next, a system configuration diagram of this embodiment is shown in FIG.
The blanker array control circuit 41 is a circuit that individually controls a plurality of blankers that constitute the blanker array 107, and the deflector array control circuit 42 is a circuit that individually controls the deflectors that constitute the deflector arrays 104 and 105. is there. The D_FOCUS control circuit 43 is a circuit for individually controlling the dynamic focus lenses 108 and 109, and the main deflector control circuit 44.
Is a circuit for controlling the main deflector 3, and the reflected electron detection circuit 45 is a circuit for processing a signal from the reflected electron detector 7. These blanker array control circuit 41, deflector array control circuit 42, D_FOCUS control circuit 43, main deflector control circuit 44, and backscattered electron detection circuit 45 are as many as the number of columns (col. 1 to col. 9). Equipped.

  The magnetic lens array control circuit 46 is a circuit that controls the common coils of the magnetic lens arrays 21, 22, 23, and 24, and the stage drive control circuit 47 is a laser interferometer (not shown) that detects the position of the stage. This is a control circuit for jointly driving and controlling the stage 5. The main control system 48 controls the plurality of control circuits and manages the entire electron beam exposure apparatus.

  Next, as a third embodiment of the present invention, a semiconductor device manufacturing process using the exposure apparatus according to the above embodiment will be described. FIG. 12 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.

  On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using lithography using the exposure apparatus and wafer to which the exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

  The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer The resist processing step, the exposure step for printing and exposing the circuit pattern onto the wafer after the resist processing step by the above-described exposure apparatus, the development step for developing the wafer exposed in the exposure step, and the etching for removing portions other than the resist image developed in the development step Step, resist stripping step to remove resist that is no longer needed after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is sectional drawing for demonstrating the formation method of the thin film electrode which concerns on Example 1 of this invention. It is sectional drawing for demonstrating the formation method of the thin film electrode which concerns on Example 1 of this invention. It is sectional drawing for demonstrating the formation method of the thin film electrode which concerns on Example 1 of this invention. It is AA 'sectional drawing of FIG. 1-3 (O). It is a top view of FIG. 1-3 (O). FIG. 4 is a sectional view taken along line AA ′ of FIG. 3. FIG. 4 is a BB ′ cross-sectional view of FIG. 3. It is a top view of the thin film electrode which concerns on Example 1 of this invention. It is a figure which shows the principal part outline of the electron beam exposure apparatus which concerns on Example 2 of this invention. It is a figure for demonstrating the electron optical system for every column which concerns on Example 2 of this invention. It is a figure for demonstrating the function of the multi source module which concerns on Example 2 of this invention. It is a figure for demonstrating the system configuration | structure which concerns on the Example of this invention. It is a figure for demonstrating background art. It is a figure which shows the flow of the whole manufacturing process of a semiconductor device.

Explanation of symbols

  1: multi-source module, 3: main deflector, 4: wafer, 5: stage, 6: stage reference plate, 7: backscattered electron detector, ML1, ML2, ML3, ML4: magnetic lens, CC: common coil, MD : Magnetic disk, ES: Electron source, MLA: Magnetic lens array, 21, 22, 23, 24: Magnetic lens array, 41: Blanker array control device, 42: Deflector array control device, 43: D_FOCUS control circuit, 44: main deflection control circuit, 45: backscattered electron detection circuit, 46: magnetic lens array control circuit, 47: stage drive control circuit, 48: main control system, 51: aperture, 52: first blanking electrode, 53: first 2 blanking electrodes, 101: electron source, 102: condenser, 103: aperture array, 104: lens array, 105, 106: deflector array, 107 blanker array, 108, 109: die Mick focus lens, 201: substrate, 202: insulating film, 203: first aperture, 204: insulating film, 205: adhesion film, 206: conductive thin film, 207: resist pattern, 208: resist pattern, 209: resist pattern 210: resist pattern, 211: resist pattern, 212: resist pattern, 213: second opening, 214: substrate, 215: insulating film, 216: adhesion film, 217: conductive thin film, 218: opening, 221: Substrate, 222: first aperture, 223: second aperture, 224A, 224B: conductive thin film electrode, 225: insulating film, 301: deflector, 302A, 302B: wiring, 303A, 303B: shield electrode, 304 : Opening, 305: Insulating film, 401: Deflector, 402: Substrate, 403: Opening, 404A, 404B: Wiring and conductive thin film electrode, 4 05: Insulating film, 501: Deflector, 502: Substrate, 503: Opening, 504: Shield electrode, 505: Insulating film, 601: Substrate, 602: First opening, 603: Second opening, 604 : Conductive thin film electrode, 605: Insulating film.

Claims (11)

An opening forming step of forming a first plurality of openings in the substrate;
An insulating film forming step of forming an insulating film on the surface of the plurality of apertures;
A conductive film forming step of forming a conductive film on the insulating film;
A conductive film separation step of separating the conductive film on the surface of the plurality of apertures into at least two or more for each aperture;
The manufacturing method of the electrode characterized by including. In the conductive film separation step,
A resin filling step of filling the plurality of openings with resin;
An opening forming step of forming a second plurality of openings at adjacent positions outside the first plurality of openings;
A side insulating layer removing step for removing the insulating layer on the side surfaces of the first plurality of apertures, which is exposed in the second plurality of apertures;
A side-surface conductive film removing step for removing the side-surface conductive film of the first plurality of openings, which is exposed in the second plurality of openings;
The method for producing an electrode according to claim 1, comprising:   The method for manufacturing an electrode according to claim 2, wherein in the step of filling the resin in the opening, the resin is filled by a squeegee method.   The method for producing an electrode according to claim 1, wherein the conductive film forming step includes an electroless plating method.   A method for manufacturing a deflector array structure for a charged particle beam, wherein the method for manufacturing an electrode according to any one of claims 1 to 4 is used. Production method. An opening forming step of forming a first plurality of openings in the substrate;
An insulating film forming step of forming an insulating film on the surface of the plurality of apertures;
A conductive film forming step of forming a conductive film on the insulating film;
A conductive film separation step of separating the conductive film on the surface of the plurality of apertures into at least two or more for each aperture;
Electrode manufactured by.   The electrode according to claim 6, wherein the conductive film includes an electrode part and a wiring part connected to the electrode part. The electrode according to claim 6 or 7, wherein a part of the separated conductive film is electrically grounded to form a shield electrode.   A deflector array structure for deflecting a plurality of charged particle beams, comprising the electrode according to any one of claims 6 to 8.   An exposure apparatus that exposes a pattern to an exposure target with a plurality of charged particle beams, and individually controls irradiation of the exposure target with the plurality of charged particle beams by controlling trajectories of the plurality of charged particle beams. An exposure apparatus, comprising: a deflector array structure for performing the operation, wherein the deflector array structure is the deflector array structure according to claim 9. A device manufacturing method comprising: a step of exposing an exposure target using the exposure apparatus according to claim 10; and a step of developing the exposed exposure target.

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