JPH09245708A - Electron beam exposure device and exposure method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a desired exposure pattern with higher throughput by providing a correction electron optical system to be generated when an intermediate image is contraction-projected on an exposed face by means of a contraction electron optical system. SOLUTION: A sequence controller sends an exposure control file stored in a memory 19 to a deflection control circuit 21. In the deflection control circuit 21, based on position data in the exposure control file that was transmitted, a deflection control signal, a focus control signal, and non-point correction signal are transmitted to a deflector 6, a dynamic focus coil 7, and a dynamic sting coil 8 synchronized with a blanking control circuit 16 respectively, and the position of plural light source images is controlled on a wafer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus and an exposure method therefor, and more particularly to an electron beam exposure apparatus for performing pattern writing using a plurality of electron beams for direct wafer writing or mask and reticle exposure. It relates to an exposure method.

[0002]

2. Description of the Related Art An electron beam exposure apparatus includes a point beam type in which a beam is used in the form of a spot, a variable rectangular beam type in which a variable-size rectangular section is used, and a stencil mask having a desired sectional shape using a stencil. There are devices such as molds.

[0003] Point beam electron beam exposure apparatuses are used only for research and development because of their low throughput. The variable rectangular beam type electron beam exposure apparatus has a throughput of one to two orders of magnitude higher than that of the point type electron beam exposure apparatus. However, when exposing a pattern in which a fine pattern of about 0.1 μm is packed with a high degree of integration, the throughput is still high. There are many problems. On the other hand, the stencil mask type electron beam exposure apparatus uses a stencil mask in which a plurality of repeated pattern transmission holes are formed in a portion corresponding to a variable rectangular aperture. Therefore, the stencil mask type electron beam exposure apparatus has a great advantage in repeatedly exposing a pattern, and the throughput is improved as compared with the variable rectangular beam type.

[0004]

FIG. 2 shows an outline of an electron beam exposure apparatus provided with a stencil mask. The electron beam from the electron gun 501 is applied to a first aperture 502 that defines an electron beam irradiation area of the stencil mask. An electron beam for illumination defined by the first aperture is transmitted through the projection electron lens 503 to the second aperture 504.
The upper stencil mask is irradiated, and the electron beam from the repeating pattern transmission hole formed in the stencil mask is reduced and projected on the wafer 506 by the reduction electron optical system 505.
Further, the image of the pattern transmission hole is repeatedly moved on the wafer by the deflector 507 and is sequentially exposed.

In the stencil mask type, a repetitive pattern can be exposed at one time, and the exposure speed can be increased. However, although the stencil mask type has a plurality of pattern transmission holes as shown in FIG. 3, there is a problem that the pattern must be formed in advance as a stencil mask in accordance with the exposure pattern.

Further, the exposure area that can be exposed at one time is limited due to the space charge effect and the aberration of the reduction electron optical system. Therefore, a semiconductor circuit that requires a large number of transfer patterns that cannot be accommodated in one stencil mask is required. In this case, it is necessary to prepare a plurality of stencil masks and take them out one by one and use them. This requires a time for mask replacement, which causes a problem that the throughput is significantly reduced.

If the stencil mask has patterns of different sizes, or if there is one pattern in which patterns of different sizes are combined, the exposure pattern due to the space charge effect is changed depending on the size of the pattern. The blur is different. Even if an attempt is made to correct the blur by refocusing, the refocus amount differs depending on the size of the pattern, and there is a problem that the above-described pattern cannot be used substantially as a stencil mask pattern.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and a first object thereof is to realize a space charge effect and a reduction electron optical system without using a stencil mask. An object of the present invention is to provide an electron beam exposure apparatus with high throughput by reducing the influence of aberration and expanding the exposure area that can be exposed at one time.

A second object is to provide an electron beam exposure apparatus that does not limit the patterns that can be used for stencil marks.

(1) An embodiment of the electron beam exposure apparatus of the present invention is an electron beam exposure apparatus having a light source for emitting an electron beam and a reduction electron optical system for reducing and projecting an image of the light source on a surface to be exposed. The intermediate image of the light source is formed between the light source and the reduction electron optical system in a direction orthogonal to the optical axis of the reduction electron optical system, and each intermediate image is exposed by the reduction electron optical system. It is characterized by having a correction electron optical system for previously correcting the aberration generated when the image is reduced and projected on the surface.

(1-1) The correction electron optical system sets the position of each of the intermediate images in the optical axis direction of the reduction electron optical system according to the field curvature of the reduction electron optical system. To do.

(1-2) The correction electron optical system sets the position of each intermediate image in the direction orthogonal to the optical axis of the reduction electron optical system according to the distortion of the reduction electron optical system. And

(1-3) For each of the intermediate images, there is provided means for blocking the electron beam so that the electron beam forming the intermediate image does not reach the exposed surface.

(1-4) It is characterized in that it has control means for controlling the blocking means according to the pattern to be exposed on the exposed surface.

(1-5) A first position adjusting means for adjusting the position of each of the intermediate images in the direction orthogonal to the optical axis of the reduction electron optical system is provided.

(1-6) Position detecting means for detecting the position where each intermediate image is reduced and projected by the reduction electron optical system, and each intermediate image is predetermined based on the result of the position detecting means. And a means for controlling the first position adjusting means so as to be positioned.

(1-7) It is characterized in that it has a second position adjusting means for adjusting the position of each intermediate image in the optical axis direction of the reduction electron optical system.

(1-8) Position detecting means for detecting the position at which each of the intermediate images is reduced and projected by the reduction electron optical system, and the second position adjusting means is controlled based on the result of the position detecting means. And means for doing so.

(1-9) The reduction electron optical system has a magnification adjusting means for adjusting the magnification of the reduction electron optical system.

(1-10) Position detecting means for detecting the position where each intermediate image is reduced and projected by the reduction electron optical system, and means for controlling the magnification adjusting means based on the result of the detecting means. It is characterized by having. .

(1-11) The reduction electron optical system includes a deflection means for scanning the plurality of light source images in the exposed surface, and a deflection aberration correction means for correcting the aberration generated during the deflection. It is characterized by having.

(1-12) It is characterized by having means for changing the size of the light source.

(1-13) The correction electron optical system forms each of the intermediate images from the electron optical system that makes the electron beam from the light source substantially parallel, and a part of the electron beam that is substantially parallel. And a plurality of element electron optical systems of.

(1-14) The focal length of each element electron optical system is set according to the field curvature of the reduction electron optical system.

(1-15) The position of each element electron optical system in the direction orthogonal to the optical axis of the reduction electron optical system is set according to the distortion of the reduction electron optical system.

(1-16) According to the position of the light source image formed through the element electron optical system in the image plane of the reduction electron optical system and the astigmatism of the reduction electron optical system, each element The astigmatism of the electron optical system is set.

(1-17) Each of the element electron optical systems is characterized in that it has an aperture stop on the light source side for blocking an electron beam incident near the optical axis of the element electron optical system.

(1-18) A means for switching the focal length of the element electron optical system is provided, and when the focal length of the element electron optical system is switched to a predetermined focal length, And a shielding diaphragm for shielding the electron beam incident on the element electron optical system on the exposed surface side.

(1-19) The shielding diaphragm is located at the pupil of the reduction electron optical system.

(1-20) In each of the element electron optical systems, means for deflecting a substantially parallel electron beam incident on the intermediate image electron lens system on the light source side and incident on the intermediate image electron lens system When the electron beam is deflected, a shield diaphragm for shielding the electron beam on the exposed surface side with respect to the element electron optical system is provided.

(1-21) The cutoff stop is located at the pupil of the reduction electron optical system.

(1-22) A plurality of the element electron optical systems are formed on the same substrate.

(2) A mode of the electron beam exposure method of the present invention is an electron beam exposure method in which an image of a light source that emits an electron beam is reduced and projected on a surface to be exposed by a reduction electron optical system. A correction electron optical system provided between the electron optical systems forms a plurality of intermediate images of the light source in a direction orthogonal to the optical axis of the reduction electron optical system, and each intermediate image is formed by the reduction electron optical system by the reduction electron optical system. It is characterized in that the method further comprises a step of previously correcting an aberration generated when the image is reduced and projected on the exposure surface.

(2-1) It is characterized in that it has a position detecting step of detecting a position at which each of the intermediate images is reduced and projected by the reduction electron optical system.

(2-2) A step of adjusting the position of each of the intermediate images with respect to the direction of the optical axis of the reduction electron optical system based on the result of the position detection step.

(2-3) A step of adjusting the position of each of the intermediate images in the direction orthogonal to the optical axis of the reduction electron optical system based on the result of the position detecting step. 26. The electron beam exposure method of 26.

27. The electron beam exposure method according to claim 26, further comprising: (2-4) adjusting the magnification of the reduction electron optical system based on the result of the position detecting step.

(2-5) The deflection electron optical system comprises a deflection step of scanning a plurality of light source images in the image plane of the reduction electron optical system, and a deflection aberration correction correction step of correcting aberration generated at the time of deflection. It is characterized by

(2-6) The step of correcting the deflection aberration includes a step of adjusting the position of each of the intermediate images in the optical axis direction of the reduction electron optical system.

(3) In an embodiment of the electron beam exposure method of the present invention, a plurality of electron beams are moved on the surface to be exposed with the same movement amount, and the electron beam exposure method is performed according to the exposure pattern to be formed on the surface to be exposed. In the electron beam exposure method of individually blocking a plurality of electron beams, when moving the plurality of electron beams, if all the plurality of electron beams are blocked at the next movement position, the following movement positions The method may further include the step of presetting moving the plurality of electron beams to a moving position.

35. The electron beam exposure method according to claim 34, further comprising the step of: (3-1) setting the intervals of the plurality of electron beams in accordance with the pitch of the repetitive patterns included in the exposure pattern.

36. The electron beam exposure method according to claim 35, further comprising the step (3-2) of setting an interval between the plurality of electron beams to an integral multiple of a pitch of a repeating pattern included in the exposure pattern.

(4) An embodiment of the electron beam exposure apparatus of the present invention is an electron beam exposure apparatus having a light source for emitting an electron beam and an electron optical system for focusing the electron beam on a surface to be exposed. Has electron density distribution adjusting means for making the electron density distribution of the electron beam on the pupil surface of the electron optical system so that the electron density of the peripheral portion is larger than the electron density of the central portion when passing through the pupil surface of the electron optical system. Is characterized by.

(4-1) The electron optical system is characterized in that the image of the light source is reduced and projected on the exposed surface.

(4-2) It is characterized in that it has means for illuminating the substrate on which the pattern transmission holes are formed with the electron beam, and the electron optical system reduces and projects the electron beam transmitted through the substrate.

(4-3) The electron density distribution adjusting means is a diaphragm provided on the pupil plane of the electron optical system or at a position conjugate with the pupil plane.

[0047]

BEST MODE FOR CARRYING OUT THE INVENTION

[Explanation of Principle] FIG. 4 is a diagram for explaining the principle of the present invention. PL is a reduction electron optical system, and AX is an optical axis of the reduction electron optical system PL. Further, O1, O2, O3 are point light sources that emit electrons, and I1, I2, I3 are point light source images corresponding to the respective point light sources.

In FIG. 4A, point light sources O1 and O located on the object side of the reduction electron optical system PL and on the plane perpendicular to the optical axis AX.
The electrons emitted from 2, O3 form point light source images I1, I2, I3 corresponding to each point light source on the image side through the reduction electron optical system PL. At that time, the point light source images I1, I2, I3 are not formed in the same plane perpendicular to the optical axis AX due to the aberration (field curvature) of the reduction electron optical system.

Therefore, as shown in FIG. 4B, in the present invention, the point light sources O1, O2 are formed so that the point light source images I1, I2, I3 are formed in the same plane perpendicular to the optical axis AX. The positions of O3 in the optical axis direction are made different beforehand according to the aberration (field curvature) of the reduction electron optical system. Further, since the reduction electron optical system has different aberrations (astigmatism, coma, distortion) depending on the position of the light source on the object side, if the light source is pre-distorted accordingly, a more desired light source image is formed in the same plane. .

Therefore, in the present invention, a plurality of intermediate images of the light source are formed on the object side of the reduction electron optical system, and aberrations that occur when each intermediate image is reduced and projected on the surface to be exposed by the reduction electron optical system are described. By providing the correction electron optical system for performing the correction in advance, it is possible to simultaneously form many light source images having a desired shape in a wide exposure area.

As a matter of course, the plurality of intermediate images are not limited to being formed by one light source, and a plurality of intermediate images may be formed by a plurality of light sources.

The present invention will be described in detail below with reference to examples.

(First Embodiment) [Explanation of Components of Exposure System] FIG. 1 is a view showing a first embodiment of an electron beam exposure apparatus according to the present invention.

In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 11, a grid 12 and an anode 13.
The electrons emitted from the grid 12 and the anode 13 form a crossover image.

Since the electron gun 1 has a function of changing the grid voltage, the size of the crossover image can be changed.

Further, by providing an electron optical system (not shown) for enlarging, reducing or shaping this crossover image, an enlarged, reduced or shaped crossover image can be obtained, thereby increasing the size of the crossover image. The shape can be changed. (Hereinafter, these crossover images are referred to as light sources.)

The electrons radiated from this light source become a substantially parallel electron beam by the condenser lens 2 whose front focus position is at the light source position. The substantially parallel electron beam has a plurality of element electron optical systems (31, 32) (it is desirable that the number of element electron optical systems is as large as possible.
In order to simplify the description, this two-element electron optical system is shown in the figure and is the object of description) is incident on the correction electron optical system 3 arranged in a plurality in the direction orthogonal to the optical axis. Correction electron optics 3
Details of the plurality of element electron optical systems (31, 32) constituting the above will be described later.

The correction electron optical system 3 uses the intermediate image of the light source (MI1, MI
2) is formed, and each intermediate image forms a light source image (I1, I2) on the wafer 5 by the reduction electron optical system 4. At that time, wafer 5
Each element of the correction electron optical system 3 is set so that the interval between the upper light source images is an integral multiple of the size of the light source image. Further, the correction electron optical system 3 changes the position of each intermediate image in the optical axis direction according to the field curvature of the reduction electron optical system 4, and each intermediate image is reduced and projected on the wafer 5 by the reduction electron optical system 4. The aberration that occurs during the correction is corrected in advance.

The reduction electron optical system 4 is a symmetric magnetic tablet including a first projection lens 41 and a second projection lens 42. If the focal length of the first projection lens 41 is f1 and the focal length of the second projection lens 42 is f2, the distance between these two lenses is f1 + f2. The intermediate image on the optical axis AX is at the focal position of the first projection lens 41, and the image is formed at the focal point of the second projection lens. This image is reduced to -f2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, there are five spherical aberrations, isotropic astigmatism, isotropic coma, field curvature aberration, and axial chromatic aberration. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled.

A deflector 6 deflects electron beams from the plurality of intermediate images to move the images of the plurality of intermediate images on the wafer 5 in the X and Y directions. The deflector 6 deflects the MOL (moving obj
(ect lens) type electromagnetic deflector 61 and an electrostatic deflector 62 for deflecting by an electric field. The electromagnetic deflector 61 and the electrostatic deflector 62 are selectively used according to the moving distance of the light source image.
Reference numeral 7 is a dynamic focus coil that corrects the shift of the focus position due to deflection aberration that occurs when the deflector is operated, and 8 is a dynamic stig coil that also corrects astigmatism that occurs due to deflection.

Reference numerals 91 and 92 denote a plurality of electrostatic deflectors for parallelly moving (X, Y directions) or deflecting (tilting with respect to the Z axis) electron beams from a plurality of intermediate images formed by the correction electron optical system. It is a deflector configured.

Reference numeral 10 is a Faraday cup having two single knife edges extending in the X and Y directions.

Reference numeral 11 is an XYZ in which the wafer 5 is placed and moved.
The XYZ stage that can move in any direction is controlled by the stage drive controller 23.

The Faraday cup 10 fixedly mounted on the wafer stage cooperates with the laser interference optical system 20 for detecting the position of the XYZ stage to knife the charge amount of the light source image formed by the electron beam from the element electron optical system. By detecting while moving through the edge, the size of the light source image, its position (X, Y, Z), and the current emitted from the element electron optical system can be detected.

Next, the element electron optical system constituting the correction electron optical system 3 will be described with reference to FIG.

In FIG. 5A, 301 is a blanking electrode having a deflection function, which is composed of a pair of electrodes.
Is an aperture stop having an aperture (AP) that defines the shape of the transmitted electron beam, on which a blanking electrode 301 and an electrode o
A wiring (W) for forming n / of is formed. Reference numeral 303 is a unipotential lens which is composed of three aperture electrodes and has a converging function in which the upper and lower electrodes have the same acceleration potential V0 and the middle electrode is kept at another potential V1. A blanking aperture 304 is located on the focal plane of the unipotential lens 302.

The electron beam made substantially parallel by the condenser lens 2 passes through the blanking electrode 301 and the aperture (AP),
The unipotential lens 302 forms an intermediate image (MI) of the light source on the blanking aperture 304. At this time, unless an electric field is applied between the electrodes of the blanking opening 304, the electron beam is transmitted through the blanking opening 304 like an electron beam bundle 305. On the other hand, when an electric field is applied between the electrodes of the blanking aperture 304, it is blocked by the blanking aperture 304 like an electron beam bundle 306. Also, the electron beam 305 and the electron beam bundle 306
Have different angular distributions on the blanking aperture 304 (the object plane of the reduction electron optical system), so that the electron beam at the pupil position of the reduction electron optical system (on the P plane in FIG. 1) as shown in FIG. 5B. The bundle 305 and the electron beam bundle 306 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ for transmitting only the electron beam bundle 305 may be provided at the pupil position of the reduction electron optical system (on the P plane in FIG. 1). As a result, it can be shared with the blanking apertures of other element electron optical systems constituting the correction electron optical system 3.

In this embodiment, a unipotential lens having a converging action is used, but a bipotential lens having a diverging action may be used to form an intermediate image of a virtual image.

Returning to FIG. 1, description will be made. Correction electron optical system 3
, The position of the intermediate image formed by each of the element electron optical systems described above in the optical axis direction is made different according to the field curvature of the reduction electron optical system 4. As one of the concrete means,
Each element electron optical system is made the same, and the position of each element electron optical system in the optical axis direction is changed and installed. As another method, each element electron optical system is installed on the same plane, and the electron optical characteristics (focal length, principal surface position) of the unipotential lens of each element electron optical system are made different, and the light of each intermediate image is changed. It changes the axial position. The latter adopted in this embodiment will be described in detail with reference to FIG.

In FIG. 6, two openings of the same shape (AP
A blanking electrode is formed for each opening on the opening restriction 302 having (1, AP2) to form a blanking array.
Then, each blanking electrode is individually wired so that the electric field can be turned on / off independently. (See Fig. 7)

The unipotential lenses 303-1 and 303-2 are
Three insulators 307, 308, 309 having electrodes formed
Are bonded together to form a lens array. The upper and lower electrodes (303U, 303D) can be set to a common potential (see FIG. 8), and the intermediate electrodes (303M) can be individually set to a potential (see FIG. 9).
It is wired. The blanking array and the lens array have an integrated structure with an insulator 310 interposed.

Then, the unipotential lenses 303-1 and 3-3
The electrode shape of 03-2 is the same, but the focal length is different because the potential of the intermediate electrode is different. Therefore, like the electron beam bundles 311, 312, the positions of the intermediate images (MI1, MI2) in the optical axis direction are different.

Further, in order to correct the astigmatism that occurs when each intermediate image is reduced and projected by the reduction electron optical system 4 on the exposed surface, each element electron optical system generates the opposite astigmatism. ing. The shape of the aperture electrode forming the unipotential lens is distorted to generate the opposite astigmatism. As shown in FIG. 10, the unipotential lens 303-
If the shape of the opening electrode is circular as in the case of 1, the electrons distributed in the M direction and the electrons distributed in the S direction form an intermediate image at substantially the same position 313. However, unipotential lens 303-
When the shape of the aperture electrode is elliptical as shown in 3, electrons distributed in the M direction (short-axis direction) form an intermediate image at the position 314, and S
The electrons distributed in the direction (major axis direction) form an intermediate image at the position 315.

Therefore, by changing the shape of the aperture electrode of the unipotential lens of each element electron optical system according to the astigmatism of the reduction electron optical system 4, each intermediate image is formed on the surface to be exposed by the reduction electron optical system 4. Astigmatism that occurs during reduced projection can be corrected.

Further, in order to correct the coma aberration generated when each intermediate image is reduced and projected on the exposed surface by the reduction electron optical system 4, each element electron optical system generates the opposite coma aberration. . In order to generate the opposite coma, as one method, each element electron optical system decenters the center of the aperture on the aperture stop 302 with respect to the optical axis of the unipotential lens 303. As another method, electron beams from a plurality of intermediate images formed by each element electron optical system are individually deflected by deflectors (91, 92).

Further, a plurality of intermediate images are reduced by the reduction electron optical system 4
In order to correct the distortion aberration that occurs when the image is reduced and projected on the exposed surface, the distortion characteristics of the reduction electron optical system 4 are known in advance, and based on this, the direction of the direction orthogonal to the optical axis of the reduction electron optical system 4 is known. The position of each element electron optical system is set.

[Explanation of Operation] Each element electron optical system (31, 3
2) The light source images (I1, I2) formed on the wafer 5 by
As shown in FIG. 11 (A), a constant same amount of movement is obtained by the polarizer 6 from the reference position (A, B) in the scanning field of each element electron optical system, the wafer is exposed, and in sequence ( The wafer is exposed by being deflected to the next exposure position (as indicated by the arrow in the figure). In the figure, each square represents an area exposed by one light source image, and the hatched squares are areas to be exposed, and the unhatched squares are areas not to be exposed.

When the pattern data of the exposure pattern as shown in FIG. 11 (A) is input, the CPU 12 divides it into scan fields for each element electron optical system, and as shown in FIG. Position data (dx, dy) of the exposure position based on the starting point position (A, B) for each, and exposure data indicating whether or not to perform exposure for each scanning field at the exposure position (hatched squares are 1, The unhatched squares are set to 0) as one set of exposure control data.
Then, an exposure control data file in which the exposure control data is arranged in the order of exposure is created. (Since the scanning field of each element electron optical system obtains a constant same movement amount by the deflector 6 starting from each reference position (A, B), exposure data of a plurality of scanning fields can be obtained for one position data. Can be combined.)

Further, among the exposure control data, the exposure control data that is not exposed in all scanning fields, that is, all the exposure data is 0 is deleted (exposure data surrounded by DEL in FIG. 11B), Recreate the exposure control data file as shown in FIG. Then, the exposure control data file is transferred to the memory 19 via the interface 13.
To memorize.

In addition, when there are many repetitive patterns having a specific cycle (pitch) to be input (for example,
The circuit pattern of DRAM, which often has a pattern with a cycle corresponding to the cell pitch, has a starting point position (on the wafer) of each scanning field so that the starting point position interval of each scanning field is an integral multiple of the specific cycle (pitch). The distance between the light source positions formed via each element electron optical system is set. As a result, the exposure control data in which all the exposure data are 0 is increased, and the data can be compressed more. As a concrete method thereof, a method of adjusting the magnification of the reduction electron optical system 4 (changing the respective focal lengths of the first projection lens 41 and the second projection lens 42 by the magnification adjustment circuit 22) and each element electron optics There is a method of adjusting the intermediate image position formed by the system by the deflectors 91 and 92.

When a pattern has already been formed on the wafer 5 and the pattern input to the present apparatus is overprinted on the pattern, the wafer expands and contracts due to the process passed before the wafer is overbaked. The formed pattern may also be stretched. Therefore, in this apparatus, the position of at least two wafer alignment marks on the wafer 5 is detected by an alignment device (wafer mark position detection device) not shown, and the expansion / contraction rate of the pattern already formed is detected. Then, based on the detected expansion / contraction ratio, the magnification of the reduction electron optical system 4 is adjusted by the magnification adjustment circuit 22 to expand / contract the light source image interval, and the gain of the polarizer 6 is adjusted by the deflection control circuit 21 to adjust the light source image. Increase or decrease the amount of movement. Therefore, good repeated firing can be achieved even for a stretched pattern.

Returning to FIG. 1 again, the operation of this embodiment will be described. , When the CPU 12 issues a calibration command for the exposure system, the sequence controller 14 causes, via the focus control circuit 15, the position of the intermediate image formed by each element electron optical system of the correction electron optical system 3 in the optical axis direction. The potential of the intermediate electrode of each element electron optical system is set so that is set to a predetermined position.

Then, in the system controller 14, only the electron beam from the element electron optical system 31 is supplied to the XYZ stage 11
The blanking control circuit 16 is controlled so as to irradiate the side, and the blanking electrodes other than the element electron optical system 31 are operated (blanking on). At the same time, the drive controller 17 drives the XYZ stage 11 to move the Faraday cup 10 near the light source image formed by the electron beam from the element electron optical system 31, and the laser interferometer 20 determines the position of the XYZ stage 11 at that time. To detect. Then, while detecting the position of the XYZ stage 11 and moving the XYZ stage, the Faraday cup 10 detects the light source image formed by the electron beam from the element electron optical system 31, and the position, size, and The applied current is detected. The position (X1, Y1, Z1) at which the light source image has a predetermined size and the current I1 emitted at that time are detected.

Next, the blanking control circuit 16 is controlled so that only the electron beam from the element electron optical system 32 irradiates the XYZ stage 11 side, and the blanking electrodes other than the element electron optical system 32 are operated. At the same time, the drive controller 17 drives the XYZ stage 11 to drive the element electron optical system 31.
The Faraday cup 10 is moved to the vicinity of the light source image formed by the electron beam from the laser beam, and the position of the XYZ stage 11 at that time is detected by the laser interferometer 20. And XY
While detecting the position of the Z stage 11 and moving the XYZ stage, the light source image formed by the electron beam from the element electron optical system 32 is detected by the Faraday cup 10, and the position, size, and the position of the light source image at that time are detected. The applied current is detected. The position (X2, Y2, Z2) at which the light source image has a predetermined size and the irradiation current I2 at that time are detected.

Then, based on the detection result, the sequence controller positions the positions in the XY directions of the respective light source images formed by the electron beams from the element electron optical systems 31 and 32 in a predetermined relative positional relationship. Therefore, each intermediate image is translated in the XY directions by the deflectors 91 and 92 via the optical axis alignment control circuit 18. Also, element electron optical system
Z of each light source image formed by the electron beams from 31, 32
The potential of the intermediate electrode of each element electron optical system is reset through the focus control circuit 15 in order to position the directional position within a predetermined range. Further, the detected electric current applied to the wafer of each element electron optical system is stored in the memory 19.

Next, when the pattern exposure is started by the command of the CPU 12, the sequence controller 14 stores the sensitivity of the resist applied on the wafer 5 in advance in the memory 19 and the memory 19 as described above. The exposure time at the exposure position of the light source image formed by each element electron optical system (the staying time of the light source image at the exposure position) is calculated based on the irradiation current on the wafer for each element electron optical system It is calculated for each element electron optical system and transmitted to the blanking control circuit 16. The sequence controller 14 also transmits the exposure control file stored in the memory 19 to the blanking control circuit 16 as described above. In the blanking control circuit 16,
Blanking OFF time (exposure time) for each element electron optical system
Based on the exposure data for each element electron optical system and the blanking OFF time (exposure time) for each element electron optical system in the exposure control file that has been set,
A blanking signal as shown in FIG. 12 is transmitted to each element electron optical system in synchronization with the deflection control circuit 21, and the exposure timing and the exposure amount for each element electron optical system are controlled. (Field 2 has a longer exposure time at each exposure position than field 1)

On the other hand, the sequence controller 14
As described above, the exposure control file stored in the memory 19 is transmitted to the deflection control circuit 21. In the deflection control circuit 2, based on the position data in the transmitted exposure control file, the deflection control signal, the focus control signal,
Each of the astigmatism correction signals is transmitted via the D / A to the deflector 6, the dynamic focus coil 7, and the dynamic stig coil 8 in synchronization with the blanking control circuit 16, and the positions of a plurality of light source images on the wafer are controlled. To be done.

When the deviation of the focus position due to the deflection aberration generated when the deflector is operated cannot be completely corrected by only the dynamic focus coil, the position of the light source image in the Z direction is positioned within a predetermined range. Therefore, the position of the intermediate image in the optical axis direction may be changed by adjusting the potential of the intermediate electrode of each element electron optical system via the focus control circuit 15.

[Embodiment 1 of Element Electron Optical System] FIG. 13
Another example 1 of the element electron optical system will be described with reference to FIG. In the figure, the same components as those in FIG. 5 are designated by the same reference numerals, and the description thereof will be omitted.

A major difference from the element electron optical system of FIG. 5 is the aperture shape on the aperture stop and the blanking electrode.
The aperture (AP) shields the electron beam incident near the optical axis of the unipotential lens 303 and forms a hollow beam (hollow cylindrical beam) electron beam. The blanking electrode 321 is a blanking electrode suitable for this opening shape, and is composed of a pair of cylindrical electrodes.

The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source on the blanking aperture 304 by the unipotential lens 302 via the blanking electrode 321 and the aperture stop 322. At this time, unless an electric field is applied between the electrodes of the blanking opening 304, the electron beam bundle 323 penetrates through the blanking opening 304 like an electron beam bundle 323. On the other hand, when an electric field is applied between the electrodes of the blanking aperture 304, the electron beam is deflected and blocked by the blanking aperture 304 like the electron beam bundle 324. Since the electron beam bundle 323 and the electron beam 324 have different angular distributions on the blanking aperture 304 (the object plane of the reduction electron optical system), the pupil position of the reduction electron optical system ( In P) of FIG. 1, the electron beam bundle 323 and the electron beam bundle 324 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ for transmitting only the electron beam bundle 323 may be provided at the pupil position of the reduction electron optical system. As a result, it can be shared with the blanking apertures of other element electron optical systems constituting the correction electron optical system 3.

Further, since the space beam effect of the electron beam in the form of a hollow beam (hollow cylindrical beam) is smaller than that of a solid electron beam (for example, a Gaussian beam), the electron beam is focused on the wafer to form a light source image with small blur. It can be formed on a wafer. That is, when the electron beam from each element electron optical system passes through the pupil plane P of the reduction electron optical system 4, the electron density distribution of the electron beam on the pupil plane is set such that the electron density in the peripheral portion is higher than the electron density in the central portion. By making it large, the above effect can be obtained. The electron density distribution on the pupil plane P is such that the aperture on the aperture stop 320 (the central portion is shielded from light) is provided at a position substantially conjugate with the pupil plane P of the reduction electron optical system 4 as in the present embodiment. Aperture) can be achieved.

[Second Embodiment of Element Electron Optical System] Next,
A second embodiment of the element electron optical system will be described with reference to FIG. In the figure, the same components as those of FIG. 5 or 13 are designated by the same reference numerals, and the description thereof will be omitted.

A major difference from the element electron optical system of FIG. 5 is that the aperture shape on the aperture stop (the same shape as the aperture stop of FIG. 13A) and the blanking electrode are not provided.

The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source on the blanking aperture 304 by the unipotential lens 302 via the aperture stop 322. At this time, the unipotential lens 302
If the intermediate electrode is set to a predetermined potential, the electron beam is converged and passes through the aperture of the blanking aperture 304 like the electron beam bundle 330. On the other hand, when the intermediate electrode of the unipotential lens 302 is made to have the same potential as the other electrodes, the electron beam is not converged and is blocked by the blanking aperture 304 like the electron beam bundle 331. Blanking can be controlled by changing the potential of the intermediate electrode of the unipotential lens 302.

Further, the electron beam bundle 331 and the electron beam bundle 332
Have different angular distributions on the blanking aperture 304 (the object plane of the reduction electron optical system), the electron beam 33 at the pupil position of the reduction electron optical system (P in FIG. 1) as shown in FIG. 14 (B).
0 and the electron beam 331 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ for transmitting only the electron beam bundle 330 may be provided at the pupil position of the reduction electron optical system. As a result, it can be shared with the blanking apertures of other element electron optical systems constituting the correction electron optical system 3.

Second Embodiment [Explanation of Components of Exposure System] FIG. 15 is a diagram showing a second embodiment of the electron beam exposure apparatus according to the present invention. In FIG.
The same components as those described above are denoted by the same reference numerals, and description thereof will be omitted.

In FIG. 15, the electrons emitted from the light source of the electron gun 1 become a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the light source position. The substantially parallel electron beam is an element electron optical system array 130 formed by arranging a plurality of element electron optical systems described in FIG. 13 in a direction orthogonal to the optical axis (in the correction electron optical system 3 of the first embodiment, Corresponding) to form a plurality of intermediate images. The element electron optical system array 130 has a plurality of sub-arrays in which a plurality of element electron optical systems having the same electron optical characteristics are arranged. At least two sub-arrays have different electron optical characteristics of the element electron optical systems belonging to each. Details of the element electron optical system array 130 will be described later.

Reference numeral 140 is a deflector for deflecting (tilting with respect to the Z-axis) the electron beam incident on the sub-array, which is provided for each sub-array. The function of the deflector 140 is to correct the difference in the incident angle of the electron beam incident on the sub-arrays at different positions due to the aberration of the condenser lens 2 for each sub-array.

Reference numeral 150 denotes a deflector for parallelly moving (X, Y directions) and deflecting (tilting with respect to the Z axis) electron beams of a plurality of intermediate images formed by the sub-array. It corresponds to 91 and 92 of the first embodiment, and the difference is that a plurality of electron beams from the sub-array are collectively translated and deflected.

The plurality of intermediate images formed by the element electron optical system array 130 are reduced and projected onto the wafer 5 by the reduction electron optical system 100 and the reduction electron optical system 4.

In this embodiment, in order to reduce the reduction rate without increasing the size of the exposure apparatus, two-step reduction is adopted. The reduction electron optical system 100 is composed of a first projection lens 101 and a second projection lens 102 like the reduction electron optical system 4. That is, the reduction electron optical system 4 and the reduction electron optical system 100.
And constitute one reduction electron optical system.

Reference numeral 110 denotes a refocusing coil. When the number of electron beams from the element electron optical system array increases, the beam size incident on the reduction electron optical system increases substantially, and the light source image is blurred due to the space charge effect. Because it occurs
In order to correct this, the focus position is controlled based on the number of light source images (the number of blanking electrodes that are turned off) to be applied to the wafer obtained from the sequence controller 14.

Reference numeral 120 denotes a common blanking aperture located in the pupil plane of the reduction electron optical system 100 and composing the element electron optical system array, and corresponds to 304 'in FIG.

Next, the element electron optical system array 130 will be described with reference to FIG. This figure shows the element electron optical system array 1
It is the figure which looked at 30 from the electron gun 1 side.

The element electron optical system array 130 is an array of the element electron optical systems described with reference to FIG. 13. The element electron optical system array 130 has a plurality of openings, blanking electrodes corresponding to the openings, and wirings thereof formed on one substrate. It is composed of a ranking array and a lens array in which electrodes that form a unipotential lens are laminated on one substrate with an insulator interposed, and a blanking array and a lens array so that each aperture and the corresponding unipotential lens face each other. And are located and combined.

Reference numerals 130A to 130G are sub-arrays composed of a plurality of element electron optical systems. For example, sub array 130A
In, 16 element electron optical systems 130A-1 to 130A-16 are formed. Since the amount of aberration to be corrected within one sub-array is almost the same or within the allowable range, the unipotential lenses of the element electron optical systems 130A-1 to 130A-16 have the same aperture electrode shape and the same potential applied. ing. Therefore, wiring for applying individual potentials to the electrodes is unnecessary. However, the blanking electrode is
Separate wiring is required as in the first embodiment.

Of course, the sub-array may be further divided into a plurality of sub-sub-arrays, and the electro-optical characteristics (focal length, astigmatism, coma, etc.) of the element electron optical system may be the same for each sub-sub-array. Of course, in that case, the wiring of the intermediate electrode is required for each sub-sub array.

[Description of Operation] Differences from the first embodiment will be described.

First, when the calibration of the exposure system is performed, in the first embodiment, for all light source images, the position (X,
(Y, Z) and the irradiation current I at that time were detected, but in this embodiment, at least one light source image representing the sub-array is detected. Based on the detection result, the sequence controller controls the optical axis alignment control circuit 18 in order to position the positions of the respective light source images of the element electron optical system representing the sub-array in the XY directions in a predetermined relative positional relationship. Via the deflector 150, each intermediate image in the sub-array is translated by the same amount in the direction orthogonal to the optical axis of the reduction electron optical system. Further, the potential of the intermediate electrode of each sub-array is set via the focus control circuit 15 in order to position the position of each light source image of the element electron optical system representing the sub-array in the Z direction within a predetermined range. fix. Further, the detected irradiation current of the element electron optical system representative of the sub-array is stored in the memory 19 as the irradiation current of each element electron optical system in the same sub-array.

As shown in FIG. 17, the light source image formed on the wafer 5 by each element electron optical system in the sub-array has the same scanning field of each element electron optical system starting from each reference position (black circle). The amount of movement is obtained by the deflector 6, and the scanning fields of the respective element electron optical systems are adjacent to each other to expose the wafer. Then, the wafer is exposed by all the sub-arrays as shown in FIG. Then, Ly step is performed in the Y direction by the deflector 7, the same movement amount is obtained by the deflector 6 from each reference position (black circle) as the starting point of the scanning field of each element electron optical system, and the wafer is exposed. By repeating the above four times, as shown in FIG. 19, an exposure field in which the exposure fields of the respective sub-arrays are adjacent to each other is formed.

(Embodiment 3) [Explanation of Components of Exposure System] FIG. 20 is a view showing Embodiment 3 of the electron beam exposure apparatus according to the present invention. In FIG.
The same components as those of FIG. 15 are designated by the same reference numerals, and the description thereof will be omitted.

The present embodiment is different from Embodiment 2 in that at least one electrode for decelerating or accelerating the electron beam is added, and a means for changing the shape of the light source is provided.

The unipotential lens, which is an electrostatic lens forming the element electron optical system array 130, can achieve a smaller electron lens as the energy of the electron is lower.

However, it is necessary to increase the anode voltage in order to extract many electron beams from the electron gun 1.
As a result, the electrons from the electron gun can be high in energy. Therefore, in this embodiment, a deceleration electrode such as DCE in the figure is provided between the electron gun 1 and the element electron optical system array 130. The deceleration electrode is an electrode having a lower potential than the anode, and as a result, the element electron optical system array 130 is
The energy of the electrons incident on is adjusted. As for the shape, there are a type having an aperture corresponding to each element electron optical system as shown in (A) in the figure and a type having an aperture corresponding to each sub array as shown in (B) in the figure.

In the reduction electron optical system (4, 100), if the energy of the electron beam is low, the focusing property of the electron beam on the wafer is deteriorated due to the space charge effect, so that the energy of the electron beam from the unipotential lens is increased. Need to (accelerate). Therefore, in this embodiment, an accelerating electrode such as ACE in the figure is provided between the element electron optical system array 130 and the reduction electron optical system (4, 100). The accelerating electrode is an electrode having a high potential with respect to the element electron optical system array,
Thereby, the energy of the electrons incident on the reduction electron optical system (4, 100) is adjusted. Similar to the deceleration electrode, the shape is divided into a type having an opening corresponding to each element electron optical system as shown in (A) and a type having an opening corresponding to each sub-array as shown in (B) in the figure. is there.

Also in Examples 1 and 2 and this Example,
A desired exposure pattern is formed by transferring the light source image onto the wafer and scanning it. The size of the light source image is set to 1/5 to 1/10 of the minimum line width of the exposure pattern. Therefore, the number of light source image moving steps for exposure can be minimized by changing the size of the light source according to the minimum line width of the exposure pattern. Therefore, in this embodiment, 16
An electron optical system for shaping the light source shape such as 0 is provided. In the electron optical system 160, the light source S0 of the electron gun forms the light source image S1 by the first electron lens 161, and the image S2 of the light source image S1 by the second electron lens 162. With such a configuration, if the focal lengths of the first electron lens 161 and the second electron lens 162 are changed, the position of the light source image S2 can be fixed and only the size thereof can be changed. The focal lengths of the first electron lens 161 and the second electron lens 162 are controlled by the light source shape shaping circuit 163.

By providing an opening having a desired shape at the position S2 of the light source image, not only the size of the light source but also the shape can be changed.

(Embodiment 4) [Explanation of Components of Exposure System] FIG. 21 is a view showing Embodiment 4 of the electron beam exposure apparatus according to the present invention. In the figure, the same components as those of FIGS. 1, 15 and 20 are designated by the same reference numerals, and the description thereof will be omitted.

The electron beam exposure apparatus of this embodiment is a stencil mask type exposure apparatus. That is, the electron beam from the electron gun 1 has a first opening that defines an illumination area.
Molded by molding aperture 200, the first molded electronic lens 2
10 (composed of electronic lenses 211 and 212) and shaping deflector 220
Stencil mask 230 with pattern transmission holes using
Illuminate. Then, the drawing pattern elements of the stencil mask 230 are transferred to the wafer 5 by the reduction electron optical system (4, 100).
The projection is reduced above.

The present embodiment is different from the conventional stencil mask type exposure apparatus in the vicinity of the pupil of the reduction electron optical system 100.
When the electron beam from the stencil mask 230 passes through the pupil plane, a stop is provided to make the electron density distribution of the electron beam on the pupil plane larger in the peripheral electron density than in the central portion. That is, a hollow beam forming diaphragm 240 that shields the central part of the diaphragm as shown in FIG. Then, as shown in FIG. 22, the electron beam from the stencil mask has a holographic electron density distribution. For reference, the electron density distribution of the conventional Gaussian beam is also shown.

As described in [First Embodiment of Elemental Electron Optical System], since the space charge effect of the holo-beam is smaller than that of the conventional Gaussian beam, the electron beam is focused on the wafer and the source image with less blurring is obtained. Can be formed on the wafer. Also,
The electron beam passing through the stencil mask is considered to be the light source located on the stencil mask. Then, even when an image of the light source having the shape of the stencil mask pattern is formed on the wafer, the light source image faithful to the light source shape can be formed because the space charge effect is small. That is, an exposure pattern faithful to the pattern of the stencil mask can be formed on the wafer.

In this embodiment, the hollow beam forming diaphragm 240 is provided near the pupil plane of the reduction electron optical system 100. However, a position conjugate with the pupil of the reduction electron optical system 100, for example, the pupil position of the first molding lens 210, the light source The above effect can be achieved by providing a diaphragm having the same shape as the hollow beam forming diaphragm 240 at the position S2.

Further, the shape and potential of each electrode of the electron gun may be adjusted so that the light source itself has a hollow beam shape.

Of course, in this embodiment, even if the first shaping aperture 200 has a rectangular opening and the second shaping aperture having a rectangular opening is installed in place of the stencil mask to change to a variable rectangular beam type exposure apparatus, Similar effects can be achieved with similar configurations.

Next, an embodiment of a device manufacturing method using the electron beam exposure apparatus and the exposure method described above will be described.

FIG. 20 shows minute devices (semiconductor chips such as IC and LSI, liquid crystal panel, CCD, thin film magnetic head,
2 shows a flow of manufacturing a micromachine or the like. Step 1
In (circuit design), a circuit of a semiconductor device is designed.
In step 2 (exposure control data creation), exposure control data of the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data has been input. The next step 5 (assembly) is called the post-process, and step 4
Is a process of forming a semiconductor chip using the wafer produced by the above process, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 21 shows the detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. Step 17
In (development), the exposed wafer is developed. Step 18
In (etching), portions other than the developed resist image are scraped off. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been difficult to manufacture conventionally, at low cost.

[0130]

As described above, according to the present invention, (1) no stencil mask is required. (2) A large number of light source images having a desired shape can be simultaneously formed in a wide exposure area. (3) Since the light source images are arranged discretely, they are not affected by the space charge effect. Therefore, a desired exposure pattern can be formed with higher throughput.

Further, by forming the horobeam-shaped electron beam, the influence of the space charge effect can be reduced, and particularly in the stencil mask type electron beam exposure apparatus, the limitation of the pattern that can be used for the stencil mark can be reduced, and the throughput can be further improved. Can be higher

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment of an electron beam exposure apparatus according to the present invention.

FIG. 2 is a diagram showing an outline of an electron beam exposure apparatus provided with a stencil mask.

FIG. 3 is a diagram illustrating a concept of stencil mask type exposure.

FIG. 4 illustrates the principle of the present invention.

FIG. 5 is a diagram illustrating an element electron optical system.

FIG. 6 is a diagram illustrating a correction electron optical system.

FIG. 7 is a wiring diagram of a blanking electrode.

FIG. 8 is a diagram illustrating upper and lower aperture electrodes.

FIG. 9 is a diagram illustrating an intermediate electrode.

FIG. 10 is a diagram illustrating a unipotential lens having astigmatism.

FIG. 11 is a diagram illustrating an exposure pattern and exposure control data.

FIG. 12 is a diagram illustrating a blanking signal transmitted to each element electron optical system.

FIG. 13 is a diagram illustrating another example 1 of the element electron optical system.

FIG. 14 is a diagram illustrating another example 2 of the element electron optical system.

FIG. 15 is a diagram showing Embodiment 2 of the electron beam exposure apparatus according to the invention.

FIG. 16 is a diagram illustrating an element electron optical system array.

FIG. 17 is a diagram for explaining a scan field of a sub array.

FIG. 18 is a diagram illustrating a scanning field of an element electron optical system array.

FIG. 19 is a diagram illustrating an exposure field.

FIG. 20 is a diagram showing Embodiment 3 of the electron beam exposure apparatus according to the invention.

FIG. 21 is a diagram showing Embodiment 4 of the electron beam exposure apparatus according to the invention.

FIG. 22 is a diagram illustrating an electron density distribution on the pupil plane.

FIG. 23 is a diagram illustrating a manufacturing flow of a micro device.

FIG. 24 is a diagram illustrating a wafer process.

[Explanation of symbols]

 1 electron gun 2 condenser lens 3 correction electron optical system 31, 32 element electron optical system 4 reduction electron optical system 5 wafer 6 deflector 7 dynamic focus coil 8 dynamic stig coil 91, 92 deflector 10 Faraday cup 11 XYZ stage 12 CPU 13 Interface 14 Sequence controller 15 Focus control circuit 16 Blanking control circuit 17 Drive control device 18 Optical axis alignment control circuit 19 Memory 21 Laser interference system 130 Element electron optical system array 160 Electron optical system for light source shape shaping DCE Deceleration electrode ACE Electrode for acceleration 240 Hollow beam forming diaphragm

Claims (41)

[Claims] 1. An electron beam exposure apparatus comprising a light source for emitting an electron beam and a reduction electron optical system for reducing and projecting an image of the light source on a surface to be exposed, the electron beam exposure apparatus being provided between the light source and the reduction electron optical system. A plurality of intermediate images of the light source are formed in a direction orthogonal to the optical axis of the reduction electron optical system, and aberrations that occur when each intermediate image is reduced and projected on the exposed surface by the reduction electron optical system are described in advance. An electron beam exposure apparatus having a correction electron optical system for correction. 2. The correction electron optical system sets the position of each of the intermediate images in the optical axis direction of the reduction electron optical system according to the field curvature of the reduction electron optical system. 1. Electron beam exposure apparatus. 3. The correction electron optical system sets a position of each of the intermediate images in a direction orthogonal to an optical axis of the reduction electron optical system according to a distortion of the reduction electron optical system. Item 1. The electron beam exposure apparatus according to items 1 and 2. 4. The apparatus according to claim 1, further comprising means for intercepting the electron beam for forming each of the intermediate images so that the electron beam forming the intermediate image does not reach the exposed surface. Electron beam exposure system. 5. The electron beam exposure apparatus according to claim 4, further comprising control means for controlling the blocking means according to a pattern to be exposed on the exposed surface. 6. The electron beam exposure apparatus according to claim 1, further comprising first position adjusting means for adjusting the position of each of the intermediate images in the direction orthogonal to the optical axis of the reduction electron optical system. 7. A position detecting means for detecting a position where each intermediate image is reduced and projected by the reduction electron optical system, and each intermediate image is positioned at a predetermined position based on a result of the position detecting means. 7. An electron beam exposure apparatus according to claim 6, further comprising means for controlling the first position adjusting means. 8. The electron beam exposure apparatus according to claim 1, further comprising second position adjusting means for adjusting the position of each intermediate image in the optical axis direction of the reduction electron optical system. 9. A position detecting means for detecting a position where each intermediate image is reduced and projected by the reduction electron optical system, and a means for controlling the second position adjusting means based on a result of the position detecting means. 9. The electron beam exposure apparatus according to claim 8, which has. 10. The electron beam exposure apparatus according to claim 1, wherein the reduction electron optical system has a magnification adjusting means for adjusting a magnification of the reduction electron optical system. 11. A position detecting means for detecting a position where each intermediate image is reduced and projected by the reduction electron optical system, and a means for controlling the magnification adjusting means based on a result of the detecting means. The electron beam exposure apparatus according to claim 10, which is characterized in that. 12. The reducing electron optical system includes a deflecting unit configured to scan a plurality of the light source images within the exposed surface,
The electron beam exposure apparatus according to any one of claims 1 to 4, further comprising: a deflection aberration correcting unit for correcting an aberration generated during the deflection. 13. The electron beam exposure apparatus according to claim 1, further comprising means for changing the size of the light source. 14. The correction electron optical system includes an electron optical system that makes an electron beam from a light source substantially parallel, and a plurality of electron optical systems that form each of the intermediate images from a part of the electron beam that is substantially parallel. The electron beam exposure apparatus according to claim 1, further comprising an element electron optical system. 15. The electron beam exposure apparatus according to claim 14, wherein the focal lengths of the respective element electron optical systems are set according to the field curvature of the reduction electron optical system. 16. Depending on the distortion of the reduction electron optical system,
15. The electron beam exposure apparatus according to claim 14, wherein the position of each element electron optical system in a direction orthogonal to the optical axis of the reduction electron optical system is set. 17. The electron beam exposure apparatus according to claim 14, wherein the astigmatism of each element electron optical system is set according to the astigmatism of the reduction electron optical system. 18. The element electron optical system according to claim 14, wherein each of the element electron optical systems has an aperture stop on the light source side for blocking an electron beam incident near the optical axis of the element electron optical system. Electron beam exposure system. 19. The exposed surface of the element electron optical system, comprising means for switching the focal length of the element electron optical system, and when the focal length of the element electron optical system is switched to a predetermined focal length. 19. The electron beam exposure apparatus according to claim 18, further comprising a shield diaphragm that shields the electron beam that has entered the element electron optical system. 20. The electron beam exposure apparatus according to claim 19, wherein the shield diaphragm is located at a pupil of the reduction electron optical system. 21. In each of the element electron optical systems, means for deflecting a substantially parallel electron beam incident on the element electron optical system to the light source side, and deflecting the electron beam incident on the element electron optical system. 19. The electron beam exposure apparatus according to claim 14, further comprising a shield diaphragm that shields the electron beam on the exposed surface side of the element electron optical system when being exposed. 22. The electron beam exposure apparatus according to claim 21, wherein the shield diaphragm is located at a pupil of the reduction electron optical system. 23. The electron beam exposure apparatus according to claim 14, wherein a plurality of the element electron optical systems are formed on the same substrate. 24. A device manufacturing method comprising manufacturing a device using the electron beam exposure apparatus according to claim 1. 25. An electron beam exposure method for reducing and projecting an image of a light source that emits an electron beam onto a surface to be exposed by a reduction electron optical system, wherein a correction electron optical system provided between the light source and the reduction electron optical system. A plurality of intermediate images of the light source are formed in a direction orthogonal to the optical axis of the reduction electron optical system, and an aberration that occurs when each intermediate image is reduced and projected on the exposed surface by the reduction electron optical system is described. An electron beam exposure method comprising a step of performing correction in advance. 26. The electron beam exposure method according to claim 25, further comprising a position detecting step of detecting a position at which each of the intermediate images is reduced and projected by the reduction electron optical system. 27. Based on a result of the position detecting step,
27. The electron beam exposure method according to claim 26, further comprising the step of adjusting the position of each of the intermediate images with respect to the direction of the optical axis of the reduction electron optical system. 28. Based on the result of the position detection step,
27. The electron beam exposure method according to claim 26, further comprising the step of adjusting the position of each of the intermediate images in the direction orthogonal to the optical axis of the reduction electron optical system. 29. Based on a result of the position detecting step,
27. The electron beam exposure method according to claim 26, further comprising adjusting a magnification of the reduction electron optical system. 30. The method according to claim 25, further comprising: a deflection step of scanning a plurality of the light source images in the exposed surface, and a deflection aberration correction step of correcting an aberration generated during the deflection. Electron beam exposure method. 31. The electron beam exposure method according to claim 30, wherein the step of correcting the deflection aberration includes the step of adjusting the position of each of the intermediate images in the optical axis direction of the reduction electron optical system. 32. A device manufacturing method comprising manufacturing a device using the electron beam exposure method according to claim 25. 33. An electron beam exposure method in which a plurality of electron beams are moved on the surface to be exposed with the same movement amount, and the plurality of electron beams are individually blocked according to an exposure pattern to be formed on the surface to be exposed. In moving the plurality of electron beams, when all the plurality of electron beams are blocked at the next movement position, the plurality of electron beams may be moved to a movement position after the next movement position. An electron beam exposure method comprising a step of presetting. 34. The method according to claim 33, further comprising the step of setting intervals of the plurality of electron beams according to a pitch of a repeating pattern included in the exposure pattern.
Electron beam exposure method. 35. The method according to claim 34, further comprising the step of setting an interval between the plurality of electron beams to be an integral multiple of a pitch of a repeating pattern included in the exposure pattern.
Electron beam exposure method. 36. A device manufacturing method comprising manufacturing a device using the electron beam exposure method according to claim 33. 37. An electron beam exposure apparatus having a light source for emitting an electron beam and an electron optical system for focusing the electron beam on a surface to be exposed, wherein the electron beam passes through a pupil plane of the electron optical system.
An electron beam exposure apparatus comprising: an electron density distribution adjusting means for adjusting an electron density distribution of the electron beam on the pupil plane such that an electron density in a peripheral portion is higher than an electron density in a central portion. 38. The electron optical system reduces and projects an image of the light source on the exposed surface.
7. Electron beam exposure apparatus. 39. The device according to claim 37, further comprising means for illuminating a substrate having a pattern transmission hole with the electron beam, wherein the electron optical system projects the electron beam transmitted through the substrate in a reduced scale. Electron beam exposure system. 40. The electron beam exposure apparatus according to claim 38, wherein the electron density distribution adjusting means is a pupil plane of the electron optical system or a diaphragm provided at a position conjugate with the pupil plane. 41. A device manufacturing method comprising manufacturing a device using the electron beam exposure apparatus according to claim 38.