JP3673608B2 - Electron beam illumination apparatus and electron beam exposure apparatus equipped with the apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron beam exposure apparatus, and more particularly to irradiating a first object using a light source that emits an electron beam for direct wafer drawing or mask / reticle exposure, and reducing the electron beam from the first object by reducing electron optics. The present invention relates to an electron beam exposure apparatus that projects and exposes a second object through a system.
[0002]
[Prior art]
Conventional electron beam exposure apparatuses include a point beam type that uses a beam in the form of a spot, and a variable rectangular beam type that uses a variable size rectangular cross section.
[0003]
Since the point beam type electron beam exposure apparatus performs drawing using a single electron beam and has a low throughput, it is used only for research and development. The variable rectangular beam type electron beam exposure system has a throughput that is one to two orders of magnitude higher than that of the point type, but basically, a single electron beam is used for drawing, so fine patterns of about 0.1 μm are highly integrated. In the case of exposing a pattern clogged with a degree, there are still many problems in terms of throughput.
[0004]
As an apparatus for solving this problem, a pattern to be drawn is formed as a pattern transmission hole in a stencil mask, and the stencil mask is illuminated with an electron beam, whereby the pattern to be drawn is transferred to the sample surface via the reduced electron optical system. There is a stencil mask type electron beam exposure apparatus. Also, a substrate having a plurality of openings is illuminated with an electron beam, a plurality of electron beams from the plurality of openings are irradiated onto the sample surface, the plurality of electron beams are deflected, the sample surface is scanned, and a pattern to be drawn There is a multi-electron beam type exposure apparatus that draws a pattern by individually turning on / off a plurality of electron beams according to the above. Both of them have a feature that the throughput can be further improved because the area exposed at one time, that is, the exposure area is wider than the conventional one.
[0005]
[Problems to be solved by the invention]
However, in the stencil mask type electron beam exposure apparatus, the transferred pattern is distorted if the electron beam illuminating the stencil mask is non-uniform, and in the multi electron beam type exposure apparatus, the intensity varies among multiple electron beams. If there is, there is a problem that the drawn pattern is distorted.
[0006]
[Means for Solving the Problems]
The present invention has been made in view of the above-described conventional problems, and an embodiment of the electron beam illumination apparatus according to the present invention is an electron beam illumination apparatus that illuminates an object using a light source that emits an electron beam. Based on the information, an illumination electron optical system having a plurality of electron lenses for irradiating the object with an electron beam from a light source, means for obtaining information on the intensity distribution of the electron beam irradiated on the object, By adjusting the electron optical power of at least two electron lenses of the plurality of electron lenses, the front focal position of the illumination electron optical system is made substantially constant, and the emission angle of the electron beam from the light source and the object And adjusting means for changing the relationship between the incident positions of the light source.
[0007]
Another embodiment of the electron beam illuminating device of the present invention is an electron beam illuminating device that illuminates an object using a light source that emits an electron beam. An illumination electron optical system having a lens; means for obtaining information on an intensity distribution of an electron beam applied to the object; and the illumination electron optical system of at least two electron lenses of the plurality of electron lenses based on the information By adjusting the position in the optical axis direction, the front focal position of the illumination electron optical system is made substantially constant, and the adjusting means changes the relationship between the exit angle of the electron beam from the light source and the incident position on the object It is characterized by having.
[0009]
An embodiment of the electron beam exposure apparatus of the present invention illuminates a first object using a light source that emits an electron beam, and projects and exposes the electron beam from the first object onto a second object via a reduced electron optical system. In an electron beam exposure apparatus, an illumination electron optical system having a plurality of electron lenses for irradiating the first object with an electron beam from the light source, and an intensity distribution of the electron beam irradiated on the first object A means for obtaining information, and by adjusting the electro-optical power of at least two electron lenses of the plurality of electron lenses based on the information, the front focal position of the illumination electron optical system is made substantially constant, And adjusting means for changing a relationship between an exit angle of the beam from the light source and an incident position on the first object .
[0010]
Another embodiment of the electron beam exposure apparatus of the present invention illuminates a first object using a light source that emits an electron beam, and projects the electron beam from the first object onto a second object via a reduction electron optical system. In an exposure electron beam exposure apparatus, an illumination electron optical system having a plurality of electron lenses for irradiating the first object with an electron beam from the light source, and an intensity distribution of the electron beam irradiated on the first object And a front focal point of the illumination electron optical system by adjusting a position in an optical axis direction of the illumination electron optical system of at least two electron lenses of the plurality of electron lenses based on the information. And adjusting means for changing a relationship between an emission angle of the electron beam from the light source and an incident position on the first object while maintaining a substantially constant position .
[0012]
The first object is a mask in which a pattern is formed by a portion that transmits an electron beam and a portion that does not transmit an electron beam.
[0013]
The first object has a plurality of openings, and has means for individually blocking an electron beam passing through the plurality of openings.
[0014]
Having said plurality of electron beams or et electron optical system an intermediate image is formed on each of the light source passing through the opening, projecting the intermediate image in multiple to the second object through said reduction electron optical system It is characterized by that.
[0015]
The electron optical system includes means for correcting aberration generated when the intermediate image is projected onto the second object via the reduction electron optical system.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
(Example 1)
[Description of components of electron beam exposure apparatus]
FIG. 1 is a schematic diagram of a main part of an electron beam exposure apparatus according to a first embodiment of the present invention.
[0017]
In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 1a, a grid 1b, and an anode 1c, and electrons emitted from the cathode 1a form a crossover image between the grid 1b and the anode 1c. (Hereinafter, these crossover images are referred to as light sources.)
[0018]
The electrons emitted from this light source become a substantially parallel electron beam by the condenser lens 2 (illumination electron lens optical system) whose front focal position is at the light source position. The substantially parallel electron beam illuminates the element electron optical system array 3. The condenser lens 2 includes electronic lenses 2a, 2b, and 2c. Then, the optical optical power (focal length) of at least two electron lenses of the electron lenses 2a, 2b, 2c is adjusted, or the optical axis direction of the condenser lens 2 of at least two electron lenses of the electron lenses 2a, 2b, 2c. It is possible to adjust the intensity distribution of the electron beam illuminating the element electron optical system by adjusting the position of or both of them. This point will be described with reference to FIG.
[0019]
When the intensity of the electron beam emitted from the light source is uniform per unit solid angle, that is, when the light distribution of the light source is uniform, the focal length of the condenser lens 2 is f, and the angle θ from the light source to the optical axis AX. Where x is the position where the electron beam emitted in step 1 enters the element electron optical system 3 via the condenser lens 2.
x = f × θ
If the condenser lens 2 has the electron optical characteristics satisfying the above, the intensity distribution of the electron beam illuminated on the element electron optical system 3 becomes uniform (solid line in FIG. 2A). Conversely, by adjusting the electron optical characteristics of the condenser lens 2 (broken line in FIG. 2A), the intensity distribution of the electron beam illuminated on the element electron optical system can be changed.
[0020]
The position at which the electron beam emitted from the light source when satisfying Equation (1) at an angle θ with respect to the optical axis AX enters the element electron optical system 3 is an ideal position x (θ), and the electron beam is actually a condenser lens. X (θ) is the position incident on the element electron optical system 3 via 2, and the ratio of the difference to the ideal position is DIS (θ) = (x (θ) -x (θ)) / x (θ) Then, DIS (θ) is one electro-optical characteristic of the condenser lens 2 and can be displayed as shown in FIG. Then, the electron optical power of at least two electron lenses of the electron lenses 2a, 2b, and 2c is adjusted, or the positions of at least two electron lenses of the electron lenses 2a, 2b, and 2c in the optical axis direction of the illumination electron optical system are set. By adjusting or by adjusting both, DIS (θ) can be changed as shown by an arrow in the figure. Specifically, the excitation current of at least two electron lenses is adjusted, or is adjusted by a drive system that moves the electron lens shown in FIG. 2A in the optical axis direction.
[0021]
For example, if the electron optical characteristics of the condenser lens 2 are adjusted and tilted to the minus side as the output angle θ is further increased, the intensity distribution of the electron beam illuminated on the element electron optical system 3 is compared to that before the adjustment. As the distance from the AX increases, the intensity of the electron beam increases.
[0022]
Here, when the electro-optical characteristics of the condenser lens 2 are adjusted, the electro-optic power of the entire system of the condenser lens 2 is substantially constant, and the position of the front focal position of the condenser lens 2 is also substantially constant. In this way, the electro-optical characteristic (DIS (θ)) of the condenser lens 2 is adjusted.
[0023]
Returning to FIG. 1, the element electron optical system array 3 is formed by arranging a plurality of element electron optical systems composed of blanking electrodes, openings, and electron lenses in a direction perpendicular to the optical axis AX. Details of the element electron optical system array 3 will be described later.
[0024]
The element electron optical system array 3 forms a plurality of intermediate images of the light source, and each intermediate image is reduced and projected by a reduction electron optical system 4 described later to form a light source image on the wafer 5.
[0025]
At that time, each element of the element electron optical system array 3 is set so that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the element electron optical system array 3 varies the position of each intermediate image in the optical axis direction according to the field curvature of the reduced electron optical system 4, and each intermediate image is reduced to the wafer 5 by the reduced electron optical system 4. Aberrations that occur during projection are corrected in advance.
[0026]
The reduction electron optical system 4 is composed of a symmetric magnetic tablet including a first projection lens 41 (43) and a second projection lens 42 (44). When the focal length of the first projection lens 41 (43) is f1, and the focal length of the second projection lens 42 (44) is f2, the distance between the two lenses is f1 + f2. The object point on the optical axis AX is at the focal position of the first projection lens 41 (43), and the image point is connected to the focal point of the second projection lens 42 (44). This image is reduced to -f2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, the five aberrations of spherical aberration, isotropic astigmatism, isotropic coma aberration, field curvature aberration, and axial chromatic aberration are determined. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled out.
[0027]
A deflector 6 deflects a plurality of electron beams from the element electron optical system array 3 and displaces a plurality of light source images on the wafer 5 by substantially the same amount of displacement in the X and Y directions. Although not shown, the deflector 6 is composed of a main deflector used when the deflection width is wide and a sub-deflector used when the deflection width is narrow. The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector.
[0028]
7 is a dynamic focus coil that corrects the deviation of the focus position of the light source image due to the deflection aberration that occurs when the deflector 6 is operated, and 8 is the same as the dynamic focus coil 7, and the deflection aberration that occurs due to the deflection. This is a dynamic stig coil for correcting astigmatism.
[0029]
A reflected electron detector 9 detects reflected electrons or secondary electrons generated when the electron beam from the element electron optical system array 3 irradiates the alignment mark formed on the wafer 5.
[0030]
10 detects the charge amount of the light source image formed by the electron beam from the element electron optical system in a Faraday cup having two single knife edges extending in the X and Y directions.
[0031]
Reference numeral 11 denotes a θ-Z stage on which a wafer is placed and which can move in the optical axis AX (Z-axis) direction and the rotational direction around the Z-axis, and the Faraday cup 10 described above is fixed thereto.
[0032]
Reference numeral 12 denotes an XY stage on which a θ-Z stage is mounted and which can move in the XY directions orthogonal to the optical axis AX (Z axis).
[0033]
Next, the element electron optical system array 3 will be described with reference to FIG.
[0034]
In the element electron optical system array 3, a plurality of element electron optical systems are grouped (subarrays), and a plurality of subarrays are formed. In this embodiment, seven subarrays A to G are formed. In each subarray, a plurality of element electron optical systems are two-dimensionally arranged. In each subarray of this embodiment, 25 element electron optical systems are formed as D (1,1) to D (5,5), and each element electron optical system includes a reduction electron optical system 4. Thus, a light source image is formed on the wafer so as to be arranged at intervals of the pitch Pb (μm) in both the X direction and the Y direction.
[0035]
A sectional view of each element electron optical system is shown in FIG.
[0036]
In FIG. 3, 301 is a blanking electrode composed of a pair of electrodes and having a deflection function, and 302 is a substrate having an aperture (AP) that defines the shape of a transmitted electron beam and other element electron optical systems. It is common. On top of that, a blanking electrode 301 and a wiring (W) for electrode on / of are formed. 303 is composed of three aperture electrodes, and uses two unipotential lenses 303a and 303b having a convergence function in which the upper and lower electrodes are the same as the acceleration potential V0 and the intermediate electrode is maintained at another potential V1 or V2. It was an electronic lens.
[0037]
The shapes of the upper, middle and lower electrodes of the unipotential lens 303a and the upper and lower electrodes of the unipotential lens 303b are as shown in FIG. 5A. The upper and lower electrodes of the unipotential lenses 303a and 303b are A common potential is set in all element electron optical systems by a focus / astigmatism control circuit 1 described later.
[0038]
Since the potential of the intermediate electrode of the unipotential lens 303a can be set for each element electron optical system by the focus / astigmatism control circuit 1, the focal length of the unipotential lens 303a can be set for each element electron optical system.
[0039]
Further, the intermediate electrode of the unipotential lens 303b is composed of four electrodes as shown in FIG. 5B, and the potential of each electrode can be set individually by the focus / astigmatism control circuit, for each element electron optical system. Since the unipotential lens 303b can have different focal lengths in the orthogonal cross section, it can be set individually for each element electron optical system.
[0040]
As a result, by controlling the potential of the intermediate electrode of the element electron optical system, the electron optical characteristics (intermediate image forming position, astigmatism) of the element electron optical system can be controlled.
[0041]
The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source by the electron lens 303 through the blanking electrode 301 and the aperture (AP). At this time, unless an electric field is applied between the blanking electrodes 301, the electron beam bundle 305 is not deflected. On the other hand, when an electric field is applied between the electrodes of the blanking electrode 301, it is deflected like an electron beam bundle 306. Then, since the electron beam 305 and the electron beam bundle 306 have different angular distributions on the object plane of the reduction electron optical system 4, the electron beam bundle 305 is at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system 4. And the electron beam bundle 306 are incident on different regions. Therefore, a blanking aperture BA for transmitting only the electron beam bundle 305 is provided at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system.
[0042]
In addition, each element electron optical system is configured to correct each element electron in order to correct field curvature and astigmatism generated when the intermediate image formed by the reduction electron optical system 4 is reduced and projected onto the exposed surface by the reduction electron optical system 4. The electric potentials of the two intermediate electrodes of the optical system are individually set to make the electron optical characteristics (intermediate image forming position, astigmatism) of each element electron optical system different. However, in this embodiment, in order to reduce the wiring between the intermediate electrode and the focus / astigmatism control circuit 1, the element electron optical systems in the same subarray have the same electron optical characteristics, and the electron optical characteristics of the element electron optical system are the same. (Intermediate image forming position, astigmatism) is controlled for each sub-array.
[0043]
Furthermore, in order to correct distortion aberration that occurs when a plurality of intermediate images are reduced and projected on the exposure surface by the reduced electron optical system 4, in advance know the distortion characteristics of the reduced electron optical system 4, based on it, The position of each element electron optical system in the direction orthogonal to the optical axis of the reduced electron optical system 4 is set.
[0044]
Next, a system configuration diagram of this embodiment is shown in FIG.
[0045]
The intensity distribution control system 13 adjusts the electro-optical power (focal length) by changing the excitation current of at least two of the electron lenses 2a, 2b, 2c constituting the condenser lens 2, or the electron lens 2a, It is a control circuit for adjusting the position of the illumination electron optical system of the at least two electron lenses 2b and 2c in the optical axis direction by the drive system or both.
[0046]
The blanking control circuit 14 is a control circuit that individually controls on / off of the blanking electrode of each element electron optical system of the element electron optical array 3, and the focus / astigmatism control circuit 1 (15) is the element electron optical array. 3 is a control circuit that individually controls the electro-optical characteristics (intermediate image forming position, astigmatism) of each element electron optical system 3;
[0047]
The focus / astigmatism control circuit 2 (16) is a control circuit for controlling the focus position and astigmatism of the reduction electron optical system 4 by controlling the dynamic stig coil 8 and the dynamic focus coil 7, and the deflection control circuit 17 is for deflecting. The control circuit for controlling the device 6, the magnification adjustment circuit 18 is a control circuit for adjusting the magnification of the reduction electron optical system 4, and the optical characteristic circuit 19 is rotated by changing the excitation current of the electromagnetic lens constituting the reduction electron optical system 4 This is a control circuit for adjusting aberration and optical axis.
[0048]
The stage drive control circuit 20 is a control circuit that drives and controls the XY stage 12 in cooperation with a laser interferometer 21 that drives and controls the θ-Z stage and detects the position of the XY stage 12.
[0049]
The control system 22 controls the plurality of control circuits, the backscattered electron detector 9 and the Faraday cup 10 in synchronization for exposure and alignment based on data from the memory 23 in which information related to the drawing pattern is stored. The control system 22 is controlled by a CPU 25 that controls the entire electron beam exposure apparatus via an interface 24.
[0050]
[Description of operation]
The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG.
[0051]
Prior to wafer exposure by the exposure apparatus, when the CPU 25 instructs the control system 22 to “calibrate” via the interface 24, the control system 22 executes the following steps.
[0052]
(Step 1)
The control system 22 sets the position in the optical axis direction of the intermediate image formed by each element electron optical system of the element electron optical system array 3 to a predetermined position via the focus / astigmatism control circuit 1 (15). Thus, the potential of the intermediate electrode of each element electron optical system is set.
[0053]
Then, the control system 22 selects one of the element electron optical systems and controls the blanking control circuit 14 so that only the electron beam from the element electron optical system irradiates the wafer side. A blanking electrode other than the electron optical system is operated (blanking on). At the same time, the XY stage 12 is driven by the stage drive control circuit 20, the Faraday cup 10 is moved in the vicinity of the light source image formed by the electron beam from the selected element electron optical system, and the electrons from the selected element electron optical system are moved. The light source image formed by the beam is detected by the Faraday cup 10, and the irradiated current is detected.
[0054]
(Step 2)
The control system 22 sequentially measures the current irradiated from the other element electron optical systems of the element electron optical system array 3 in the same manner as in Step 1, and stores the irradiation current for each element electron optical system.
[0055]
(Step 3)
The control system 22 obtains the intensity distribution of the electron beam actually illuminated on the element electron optical system array 3 based on the detection result of the current irradiated from each element electron optical system stored. Then, based on the obtained intensity distribution, the intensity distribution control system 13 is commanded so that the irradiation current of each element electron optical system becomes uniform, and at least two of the electron lenses 2a, 2b, 2c constituting the condenser lens 2 are ordered. The optical power of one electron lens is adjusted, or the positions of at least two of the electron lenses 2a, 2b, and 2c in the optical axis direction of the illumination electron optical system are adjusted, or both are adjusted.
[0056]
In this embodiment, the irradiation currents from all the element electron optical systems were measured, but in order to shorten the measurement time, the illumination area on the element electron optical array 3 was divided into a plurality of small areas. As a representative, the element electron optical systems B (3,3), C (3,3), E (3,3), F (3,3), G (3,3) of the element electron optical system array 3 shown in FIG. Only the electron beam from 3) may be detected, and the intensity distribution of the electron beam illuminated on the element electron optical system array 3 may be obtained.
[0057]
Next, when the CPU 25 instructs the control system 22 to “execute exposure” via the interface 24, the control system 22 executes the following steps.
[0058]
(Step 11)
The control system 22 instructs the deflection control circuit 17 to deflect a plurality of electron beams from the element electron optical system array by the sub deflector of the deflector 6, and also commands the blanking control circuit 14 to block each element electron optical system. The ranking electrode is turned on / off according to the pattern to be exposed on the wafer 5. At this time, the XY stage 12 continuously moves in the X direction, and the deflection control circuit 17 controls the deflection position of the electron beam including the amount of movement of the XY stage 12.
[0059]
As a result, the electron beam from one element electron optical system scans and exposes the exposure field (EF) on the wafer 5 starting from the black square as shown in FIG. As shown in FIG. 8, the exposure fields (EF) of the plurality of element electron optical systems in the subarray are set so as to be adjacent to each other. As a result, a plurality of exposure areas (EF) are formed on the wafer 5. A sub-array exposure field (SEF) comprising: At the same time, a subfield composed of subarray exposure fields (SEF) formed by each of the subarrays A to G as shown in FIG. 9 is exposed on the wafer 5.
[0060]
(Step 12)
The control system 22 instructs the deflection control circuit 17 to expose the subfield (2) after the exposure of the subfield (1) shown in FIG. Multiple electron beams from the deflected. Then, the operation of step 11 is performed to expose the subfield (2).
[0061]
The above steps 11 and 12 are repeated to expose the entire surface of the wafer by sequentially exposing the subfields as shown in FIG. 10 as subfields (3) and (4).
[0062]
(Example 2)
FIG. 11 is a view showing an electron beam exposure apparatus according to Embodiment 2 of the present invention. In the figure, the same components as those in FIG.
[0063]
The electron beam exposure apparatus of this embodiment is a stencil mask type exposure apparatus.
[0064]
That is, the electron beam from the electron gun 1 becomes a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the light source position. The substantially parallel electron beam illuminates the stencil mask SM in which a pattern is formed by a portion that transmits the electron beam and a portion that does not transmit the electron beam, that is, a pattern transmission hole. The condenser lens 2 includes electronic lenses 2a, 2b, and 2c. Then, adjust the electro-optical power (focal length) of at least two electron lenses of the electron lenses 2a, 2b, 2c, or adjust the position in the optical axis direction of at least two electron lenses of the electron lenses 2a, 2b, 2c. By adjusting both of them, it is possible to adjust the intensity distribution of the electron beam illuminated on the stencil mask SM. Then, the electron beam from the repeated pattern transmission hole in which the stencil mask SM is formed is reduced and projected onto the wafer 5 by the reduction electron optical system 4. Further, the image of the pattern transmission hole is repeatedly moved on the wafer by the deflector 6 and sequentially exposed.
[0065]
In the present embodiment, the Faraday cup 10 that detects an electron beam through a pinhole is used to obtain the intensity distribution of the electron beam illuminated on the stencil mask SM. Specifically, before the stencil mask SM is mounted on the apparatus, the electron beam from the electron gun 1 is detected by the Faraday cup 10 while the XY stage 12 is driven by the stage drive control circuit 20, and the irradiated current Is detected. The irradiation current for each position of the Faraday cup 10 is stored. The control system 22 obtains the intensity distribution of the electron beam that is actually illuminated on the stencil mask SM based on the stored detection results for each position of the Faraday cup 10. Then, based on the obtained intensity distribution, the intensity distribution control circuit 13 is commanded so that the irradiation current illuminated on the stencil mask SM is uniform, and at least of the electronic lenses 2a, 2b, 2c constituting the condenser lens 2 The optical power of the two electron lenses is adjusted, or the positions of at least two of the electron lenses 2a, 2b, and 2c in the optical axis direction of the illumination electron optical system are adjusted, or both are adjusted.
[0066]
Next, an embodiment of a device production method using the electron beam exposure apparatus described above will be described.
[0067]
FIG. 12 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 101 (circuit design), a semiconductor device circuit is designed. In step 102 (exposure control data creation), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 103 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 104 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 105 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including. In step 106 (inspection), the semiconductor device manufactured in step 105 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 107).
[0068]
FIG. 13 shows a detailed flow of the wafer process. In step 111 (oxidation), the wafer surface is oxidized. In step 112 (CVD), an insulating film is formed on the wafer surface. In step 113 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 114 (ion implantation), ions are implanted into the wafer. In step 115 (resist process), a photosensitive agent is applied to the wafer. In step 116 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 117 (development), the exposed wafer is developed. In step 118 (etching), portions other than the developed resist image are removed. In step 119 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0069]
By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device that has been difficult to manufacture at low cost.
[0070]
【The invention's effect】
As described above, according to the present invention, it is possible to provide an electron beam illumination apparatus capable of performing uniform illumination over a wide illumination area, and an electron beam exposure apparatus including the apparatus.
[Brief description of the drawings]
FIG. 1 is a schematic view showing the main part of an electron beam exposure apparatus according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating an intensity distribution adjustment function of a condenser lens.
FIG. 3 is a diagram for explaining an element electron optical system array 3;
FIG. 4 is a diagram illustrating an element electron optical system.
FIG. 5 is a diagram illustrating an electrode of an element electron optical system.
FIG. 6 is a diagram illustrating a system configuration according to the present invention.
FIG. 7 is a view for explaining an exposure field (EF).
FIG. 8 is a view for explaining a subarray exposure field (SEF).
FIG. 9 is a diagram for explaining a subfield.
FIG. 10 is a view for explaining wafer scanning exposure.
FIG. 11 is a diagram showing an outline of a main part of an electron beam exposure apparatus according to Embodiment 1 of the present invention.
FIG. 12 illustrates a manufacturing flow of a microdevice.
FIG. 13 is a diagram illustrating a wafer process.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Electron gun 2 Condenser lens 3 Element electron optical system array 4 Reduction electron optical system 5 Wafer 6 Deflector 7 Dynamic focus coil 8 Dynamic stig coil 9 Reflected electron detector 10 Faraday cup 11 θ-Z stage 12 XY stage 13 Intensity distribution control System 14 Blanking control circuit 15 Focus / astigmatism control circuit 1
16 Focus / astigmatism control circuit 2
17 Deflection control circuit 18 Magnification adjustment circuit 19 Optical characteristic circuit 20 Stage drive control circuit 21 Laser interferometer 22 Control system 23 Memory 24 Interface 25 CPU

Claims (9)

In an electron beam illumination device that illuminates an object using a light source that emits an electron beam,
An illumination electron optical system having a plurality of electron lenses for irradiating the object with an electron beam from the light source;
Means for obtaining information on the intensity distribution of the electron beam irradiated on the object;
Based on the information, by adjusting the electro-optic power of at least two electron lenses of the plurality of electron lenses, the front focal position of the illumination electron optical system is made substantially constant, and the electron beam from the light source An electron beam illuminating apparatus comprising: an adjusting unit that changes a relationship between an emission angle and an incident position on the object . In an electron beam illumination device that illuminates an object using a light source that emits an electron beam,
An illumination electron optical system having a plurality of electron lenses for irradiating the object with an electron beam from the light source;
Means for obtaining information on the intensity distribution of the electron beam irradiated on the object;
Based on the information, by adjusting the position in the optical axis direction of the illumination electron optical system of at least two electron lenses of the plurality of electron lenses, the front focal position of the illumination electron optical system is made substantially constant, An electron beam illuminating apparatus comprising adjusting means for changing a relationship between an emission angle of the electron beam from the light source and an incident position on the object . In an electron beam exposure apparatus that illuminates a first object using a light source that emits an electron beam, and projects and exposes the electron beam from the first object onto a second object via a reduced electron optical system,
An illumination electron optical system having a plurality of electron lenses for irradiating the first object with an electron beam from the light source;
Means for obtaining information on an intensity distribution of an electron beam applied to the first object;
Based on the information, by adjusting the electro-optic power of at least two electron lenses of the plurality of electron lenses, the front focal position of the illumination electron optical system is made substantially constant, and the electron beam from the light source An electron beam exposure apparatus comprising: adjusting means for changing a relationship between an emission angle and an incident position on the first object . In an electron beam exposure apparatus that illuminates a first object using a light source that emits an electron beam, and projects and exposes the electron beam from the first object onto a second object via a reduced electron optical system,
An illumination electron optical system having a plurality of electron lenses for irradiating the first object with an electron beam from the light source;
Means for obtaining information on an intensity distribution of an electron beam applied to the first object;
Based on the information, by adjusting the position in the optical axis direction of the illumination electron optical system of at least two electron lenses of the plurality of electron lenses, the front focal position of the illumination electron optical system is made substantially constant, An electron beam exposure apparatus comprising: adjusting means for changing a relationship between an emission angle of the electron beam from the light source and an incident position on the first object . 5. The electron beam exposure apparatus according to claim 3 , wherein the first object is a mask in which a pattern is formed by a portion that transmits an electron beam and a portion that does not transmit an electron beam. 5. The electron beam exposure apparatus according to claim 3 , wherein the first object has a plurality of openings and has means for individually blocking electron beams passing through the plurality of openings. 6. An electron optical system that forms intermediate images of the light source from electron beams that pass through the plurality of apertures, respectively, and projects the plurality of intermediate images onto the second object via the reduced electron optical system. The electron beam exposure apparatus according to claim 6 . The electron beam according to claim 7 , wherein the electron optical system includes means for correcting aberration generated when the intermediate image is projected onto the second object via the reduction electron optical system. Exposure device. A device manufacturing method, comprising: manufacturing a device using the electron beam exposure apparatus according to claim 3 .

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