JPH10214778A - Electron beam aligner and alleging method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase throughput by providing a substrate being irradiated with a substantially parallel electron beam produced by passing the electron beam from an electron source through an illumination electrooptical system, a plurality of electrooptical systems for forming the intermediate image of the electron source, and a plurality of means for deflecting the electron beams from the electrooptical systems individually. SOLUTION: Electrons radiated from an electron source are passe through a condenser lens 2 to produce a substantially parallel electron beam entering into an element electrooptical system array 3. The element electrooptical system array 3 forms a plurality of intermediate image of the electron source which are projected through a demagnification electrooptical system 4 to form an electron source image on a wafer 5. A deflector 6 deflects a plurality of electron beams from the element electrooptical system array 3 and displaces a plurality of electron source images, by same amount, in X and Y directions on the wafer 5. The substrate is illuminated with the substantially parallel electron beam from the condenser lens 2 and has an aperture for regulating the shape of a passing electron beam.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus and an exposure method therefor, and more particularly to an electron beam exposure apparatus for performing pattern writing using a plurality of electron beams for direct wafer writing or mask and reticle exposure. It relates to an exposure method.

[0002]

2. Description of the Related Art An electron beam exposure apparatus includes a point beam type in which a beam is used in the form of a spot, a variable rectangular beam type in which a variable-size rectangular section is used, and a stencil mask having a desired sectional shape using a stencil. There are devices such as molds.

[0003] Point beam electron beam exposure apparatuses are used only for research and development because of their low throughput. The variable rectangular beam type electron beam exposure apparatus has a throughput of one to two orders of magnitude higher than that of the point type electron beam exposure apparatus. However, when exposing a pattern in which a fine pattern of about 0.1 μm is packed with a high degree of integration, the throughput is still high. There are many problems. On the other hand, a stencil mask type electron beam exposure apparatus uses a stencil mask in which a plurality of repeating pattern transmission holes are formed in a portion corresponding to a variable rectangular aperture. Therefore, the stencil mask type electron beam exposure apparatus has a great advantage in repeatedly exposing a pattern, and the throughput is improved as compared with the variable rectangular beam type.

[0004]

FIG. 2 shows an outline of an electron beam exposure apparatus provided with a stencil mask. The electron beam from the electron gun 501 is applied to a first aperture 502 that defines an electron beam irradiation area of the stencil mask. An electron beam for illumination defined by the first aperture is transmitted through the projection electron lens 503 to the second aperture 504.
The upper stencil mask is irradiated, and the electron beam from the repeating pattern transmission hole formed in the stencil mask is reduced and projected on the wafer 506 by the reduction electron optical system 505.
Further, the image of the pattern transmission hole is repeatedly moved on the wafer by the deflector 507 and is sequentially exposed.

[0005] The stencil mask type can repeatedly expose a pattern at a time and can increase the exposure speed. However, although the stencil mask type has a plurality of pattern transmission holes as shown in FIG. 3, there is a problem that the pattern must be formed in advance as a stencil mask in accordance with the exposure pattern.

Further, the exposure area that can be exposed at one time is limited due to the space charge effect and the aberration of the reduction electron optical system. Therefore, a semiconductor circuit that requires a large number of transfer patterns that cannot be accommodated in one stencil mask is required. In this case, it is necessary to prepare a plurality of stencil masks and take them out one by one and use them. This requires a time for mask replacement, which causes a problem that the throughput is significantly reduced.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and an embodiment of the electron beam exposure apparatus according to the present invention comprises a light source for emitting an electron beam and a surface to be exposed. An electron beam exposure apparatus having a reduction electron optical system for reducing and projecting an image of the light source, an illumination electron optical system for making an electron beam from the light source substantially parallel, and a direction orthogonal to an optical axis of the reduction electron optical system. Has a plurality of openings,
A substrate on which a substantially parallel electron beam is illuminated from the illumination electron optical system, a plurality of electron optical systems corresponding to each opening for forming an intermediate image of the light source from each of the electron beams passing through each opening, A plurality of deflecting means for individually deflecting the electron beams from the optical system.

[0008] located substantially at the pupil position of the reduction electron optical system,
It is characterized by having a shielding plate for shielding the electron beam deflected by the deflecting means.

Each of the electron optical systems corrects an aberration generated when the corresponding intermediate image is reduced and projected on the surface to be exposed via the reduction electron optical system.

[0010] It is characterized in that a common deflector for giving the same deflection to the plurality of light source images reduced and projected on the surface to be exposed is provided.

The front focal position of each of the electron optical systems is set to a position of a corresponding aperture.

A corresponding deflecting means is located at the intermediate image forming position of each of the electron optical systems.

[0013] The plurality of electron optical systems are formed on the same substrate.

[0014] The plurality of deflection means are formed on the same substrate.

In one mode of the electron beam exposure method according to the present invention, a plurality of electron beams are arranged and made incident on a substrate surface, deflected by a common deflector, and the positions of the plurality of electron beams are settled sequentially. And an electron beam exposure method for individually controlling the irradiation of each of the plurality of electron beams to expose a pattern having a repetitive pattern to the substrate, wherein an arrangement pitch of the plurality of electron beams in a first direction on the substrate. Is set to an integral multiple of the pitch of the repeating pattern in the first direction;
Setting the arrangement pitch of the plurality of electron beams in a second direction orthogonal to the first direction to an integral multiple of the arrangement pitch of the repetitive patterns in the second direction. .

Determining a first region for exposing a pattern to be exposed by at least one of the plurality of electron beams; and deflecting the plurality of electron beams to settle their positions in the first region. And a step of deflecting the plurality of electron beams in the second region different from the first region without stabilizing the positions of the plurality of electron beams.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION

[Explanation of components of electron beam exposure apparatus] FIG. 1 is a schematic view of a main part of an electron beam exposure apparatus according to the present invention.

In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 1a, a grid 1b, and an anode 1c.
Electrons emitted from 1a form a crossover image between grid 1b and anode 1c. (Hereinafter, these crossover images are referred to as light sources.)

The electrons emitted from this light source are converted into substantially parallel electron beams by the condenser lens 2 whose front focal position is at the light source position. The substantially parallel electron beams enter the elementary electron optical system array 3. The element electron optical system array 3 is formed by arranging a plurality of element electron optical systems each including an opening, an electron optical system, and a blanking electrode in a direction orthogonal to the optical axis AX. Details of the element electron optical system array 3 will be described later.

The element electron optical system array 3 forms a plurality of intermediate images of the light source, and each intermediate image is reduced and projected by a reduction electron optical system 4 described later to form a light source image on the wafer 5.

At this time, each element of the element electron optical system array 3 is set so that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the elementary electron optical system array 3 makes the position of each intermediate image in the optical axis direction different according to the field curvature of the reduction electron optical system 4, and reduces each intermediate image to the wafer 5 by the reduction electron optical system 4. The aberration that occurs when the image is projected is corrected in advance.

The reduction electron optical system 4 includes a first projection lens 41 (4
3) and the second projection lens 42 (44). Let the focal length of the first projection lens 41 (43) be f
1. Assuming that the focal length of the second projection lens 42 (44) is f2, the distance between these two lenses is f1 + f2. AX on optical axis
Is located at the focal position of the first projection lens 41 (43), and its image point is focused on the second projection lens 42 (44). This image is -f
Reduced to 2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, there are five spherical aberrations, isotropic astigmatism, isotropic coma, field curvature aberration, and axial chromatic aberration. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled.

6 deflects a plurality of electron beams from the elementary electron optical system array 3 to form a plurality of light source images on the wafer 5.
This is a deflector that displaces in the X and Y directions by substantially the same amount of displacement. Although not shown, the deflector 6 is composed of a main deflector used when the deflection width is wide and a sub deflector used when the deflection width is narrow.The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector.

Reference numeral 7 denotes a dynamic focus coil which corrects a shift of the focus position of the light source image due to deflection aberration generated when the deflector 6 is operated, and 8 is generated by deflection similarly to the dynamic focus coil 7. It is a dynamic stig coil that corrects astigmatism of deflection aberration.

9 is a method for detecting reflected electrons or secondary electrons generated when the electron beam from the elementary electron optical system array 3 irradiates the alignment mark formed on the wafer 5 or the mark on the stage reference plate 13. Backscattered electron detector.

Reference numeral 10 denotes a Faraday cup having two single knife edges extending in the X and Y directions, and detects a charge amount of a light source image formed by an electron beam from the elementary electron optical system.

Numeral 11 denotes a θ-Z stage on which a wafer is placed and which can be moved in the direction of the optical axis AX (Z axis) and in the direction of rotation about the Z axis. The stage reference plate 13 and the Faraday cup
10 are fixed.

12 is a case where the θ-Z stage is mounted and the optical axis AX (Z
(XY axis) that is movable in the XY directions orthogonal to the axis.

Next, referring to FIG. 4, an elementary electron optical system array will be described.
3 will be described.

The element electron optical system array 3 includes a plurality of element electron optical systems as a group (subarray), and a plurality of subarrays are formed. In this embodiment, five sub-arrays A to E are formed. In each subarray, a plurality of element electron optical systems are two-dimensionally arranged. In each subarray of this embodiment, 27 element electron optical systems such as C (1,1) to C (3,9) are used. Are formed.

When the arrangement pitch in the X direction of the repetitive pattern included in the pattern to be drawn is Sx and the arrangement pitch in the Y direction is Sy, specifically, a semiconductor memory (DRAM, etc.)
Assuming that the size of one of the memory cells is Sx × Sy, the array pitch Px in the X direction of each element electron optical system and the array pitch in the Y direction
Py is set to satisfy the following equation.

Px = M × Sx / β Py = N × Sy / β (where M and N are integers and β is a reduction magnification of the reduction electron optical system 4) That is, a plurality of light source images in the X direction on the wafer are obtained. The arrangement pitch is set to be an integral multiple of the pitch of the repeated pattern in the X direction, and the arrangement pitch of the plurality of electron beams in the Y direction on the wafer is set to be an integral multiple of the arrangement pitch of the repeated pattern in the Y direction. The arrangement pitch of each element electron optical system is set.

FIG. 5 is a sectional view of each element electron optical system.

In FIG. 5, AP-P is a substrate having an aperture (AP1) which is illuminated by an electron beam made substantially parallel by a condenser lens 2 and defines the shape of the transmitted electron beam. This is a common substrate with the system. That is, the substrate AP-P is a substrate having a plurality of openings.

Reference numeral 301 denotes a blanking electrode which is constituted by a pair of electrodes and has a deflection function, and 302 denotes an aperture (AP).
1) A substrate having a larger aperture (AP2), which is common to other element electron optical systems. A wiring (W) for turning on / of the electrode with the blanking electrode 301 is formed on the substrate 302. That is, the substrate 302 is a substrate having a plurality of openings and a plurality of blanking electrodes.

Numeral 303 denotes three opening electrodes, the upper and lower electrodes are set to the same accelerating potential V0, and the intermediate electrode is set to a different potential.
This is an electron optical system using two unipotential lenses 303a and 303b having a converging function maintained at V1 or V2. Each of the aperture electrodes is laminated on a substrate with an insulator interposed therebetween, and the substrate is a substrate common to other element electron optical systems. That is, the substrate is a substrate having a plurality of electron optical systems 303.

The shape of the upper, middle, and lower electrodes of the unipotential lens 303a and the shape of the upper and lower electrodes of the unipotential lens 303b are as shown in FIG. The electrode is
The astigmatism control circuit 1 sets a common potential in all the element electron optical systems.

The potential of the intermediate electrode of the unipotential lens 303a can be set for each element electron optical system by the focus / astigmatization control circuit 1, so that the focal length of the unipotential lens 303a can be set for each element electron optical system.

The intermediate electrode of the unipotential lens 303b is composed of four electrodes as shown in FIG.
Since the potential of each electrode can be set individually by the focus / astigmatism control circuit and can be set individually for each element electron optical system, the unipotential lens 303b can have a different focal length in a cross section orthogonal to the element electron optics. It can be set individually for each system.

As a result, by controlling the intermediate electrodes of the electron optical system 303, the electron optical characteristics (intermediate image forming position, astigmatism) of the element electron optical system can be controlled.

The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source through the aperture (AP1) and the electron optical system 303. Here, a corresponding aperture (AP1) is located at or near the front focal position of the electron optical system 303, and an intermediate image forming position (rear focal position) of the electron optical system 303 is provided.
Alternatively, a corresponding blanking electrode 301 is located in the vicinity thereof. As a result, the beam is not deflected like the electron beam bundle 305 unless an electric field is applied between the blanking electrodes 301. On the other hand, when an electric field is applied between the blanking electrodes 301, the beam is deflected like an electron beam bundle 306. Then, since the electron beam 305 and the electron beam 306 have different angular distributions on the object plane of the reduction electron optical system 4, the electron beam 305 at the pupil position of the reduction electron optical system 4 (on the P plane in FIG. 1). And the electron beam bundle 306 are incident on mutually different regions. Therefore, a blanking aperture BA that transmits only the electron beam bundle 305 is provided at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system.

The electron lens of each element electron optics corrects the field curvature and astigmatism generated when the intermediate image formed by each is reduced and projected on the surface to be exposed by the reduction electron optical system 4. Then, the electric potentials of the two intermediate electrodes of each electron optical system 303 are individually set to make the electron optical characteristics (intermediate image formation position, astigmatism) of each element electron optical system different. However, in this embodiment, the element electron optical systems in the same sub-array have the same electro-optical characteristics in order to reduce the wiring between the intermediate electrode and the focus / astigmatism control circuit 1, and the electro-optical characteristics of the element electron optical systems (Intermediate image formation position, astigmatism) is controlled for each sub-array.

Further, a plurality of intermediate images are formed by the reduction electron optical system 4.
In order to correct the distortion that occurs when the image is reduced and projected on the surface to be exposed, the distortion characteristics of the reduction electron optical system 4 are known in advance, and based on that, the direction orthogonal to the optical axis of the reduction electron optical system 4 The position of each element electron optical system is set.

Next, FIG. 7 shows a system configuration diagram of this embodiment.

The blanking control circuit 14 turns on / of the blanking electrode of each element electron optical system of the element electron optical array 3.
control circuit for individually controlling f, focus / astigmatism control circuit 1 (1
5) is a control circuit for individually controlling the electron optical characteristics (intermediate image formation position, astigmatism) of each element electron optical system of the element electron optical array 3.

The focus / astigmatism control circuit 2 (16) is a control circuit for controlling the dynamic stig coil 8 and the dynamic focus coil 7 to control the focus position and astigmatism of the reduction electron optical system 4, and a deflection control circuit. A control circuit 17 controls the deflector 6, a magnification adjustment circuit 18 controls the magnification of the reduction electron optical system 4, and an optical characteristic circuit 19 controls the excitation current of the electromagnetic lens constituting the reduction electron optical system 4. It is a control circuit that adjusts the rotational aberration and the optical axis by changing it.

The stage drive control circuit 20 is a control circuit that controls the drive of the θ-Z stage and controls the drive of the XY stage 12 in cooperation with the laser interferometer 21 that detects the position of the XY stage 12.

The control system 22 controls the plurality of control circuits, the backscattered electron detector 9 and the Faraday cup 10 synchronously for exposure and alignment based on data from the memory 23 in which the drawing pattern is stored. The control system 22 is controlled by a CPU 25 that controls the entire electron beam exposure apparatus via an interface 24.

[Explanation of Operation] The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG.

When the pattern data to be exposed on the wafer is input, the CPU 25 determines the minimum deflection amount given to the electron beam by the deflector 6 based on the minimum line width of the pattern to be exposed on the wafer, the type and shape of the line width. decide. Next, the data is divided into pattern data for each exposure area of each element electron optical system, a common array composed of array elements FME is set using the minimum deflection amount as an array interval, and the pattern data is divided for each element electron optical system. Convert to data represented on a common array. Hereinafter, in order to simplify the description, a description will be given of a process regarding pattern data when performing exposure using the two elementary electron optical systems a and b.

FIGS. 8A and 8B show patterns to be exposed by adjacent elementary electron optical systems a and b on the common deflection array DM. That is, in each arrangement, the element electron optical system irradiates the electron beam onto the wafer with the blanking electrode turned off at the position where the pattern exists (the hatched arrangement position).

The data of the arrangement position to be exposed for each elementary electron optical system as shown in FIGS.
As shown in FIG. 8 (C), a first region FF (black portion) composed of an arrangement position when at least one of the element electron optical systems a and b is exposed, and the element electron optical systems a and b b. A second area NN (open area) consisting of an array position when both are not exposed in common is determined.

The first area FF on the array is formed by a plurality of electron beams.
When the electron beam is located at the position, the electron beam is deflected by the deflector 6 for exposure using the minimum deflection amount (array interval) as a unit, so that all the patterns exposed on the wafer can be exposed. When a plurality of electron beams are located in the second area NN on the array, the exposure can be performed by reducing the unnecessary deflection of the electron beam by deflecting the electron beam without setting the position. In other words, the plurality of electron beams skip the region NN and are deflected from the region FF to the region FF to settle.

Then, the CPU 25 determines the array position of the array element to be exposed from the data on the areas FF and NN shown in FIG. 8C, and controls the exposure so that the electron beam is positioned only at the array element to be exposed. Create data. Then, as described above, the arrangement pitch of the plurality of light source images in the X direction on the wafer is set to be an integral multiple of the pitch in the X direction of the repeated pattern, and the arrangement of the plurality of electron beams in the Y direction on the wafer. Since the arrangement pitch of each element electron optical system is set so that the pitch is an integral multiple of the arrangement pitch in the Y direction of the repeated pattern, there is a high probability that the pattern drawn by each element electron optical system will be the same, The number of the second regions NN that deflect without setting the position of the electron beam increases, and the exposure can be performed with less unnecessary deflection of the electron beam.

In the present embodiment, these processes are performed by the CPU 25 of the electron beam exposure apparatus. However, the purpose and effect are not changed even if the processing is performed by another processing apparatus and the exposure control data is transferred to the CPU 25.

Next, when the CPU 25 instructs the control system 22 to execute exposure through the interface 24, the control system 22
Executes the following steps based on the data on the memory 23 to which the above-described exposure control data has been transferred.

(Step 1) The control system 22 instructs the deflection control circuit 17 based on the exposure control data from the memory 23 transferred in synchronization with the internal reference clock, and the sub-deflector of the deflector 6 A plurality of electron beams from the element electron optical system array are deflected and a blanking control circuit 14 is provided.
The blanking electrode of each element electron optical system to the wafer 5
Is turned on / off according to the pattern to be exposed. At this time X
The Y stage 12 moves continuously in the X direction, and the deflection control circuit 17 controls the deflection position of the electron beam including the amount of movement of the XY stage 12.

As a result, the electron beam from one elementary electron optical system scans and exposes the exposure field (EF) on the wafer 5 starting from a black square as shown in FIG. 9A. Also, as shown in FIG. 9B, the exposure fields (EF) of the plurality of element electron optical systems in the sub-array are set to be adjacent, and as a result, the plurality of exposure fields The sub-array exposure field (SEF) composed of (EF) is exposed. At the same time, on the wafer 5, a subfield composed of a subarray exposure field (SEF) formed by each of the subarrays A to E as shown in FIG.

(Step 2) After exposing the subfield shown in FIG. 10B, the control system 22 instructs the deflection control circuit 17 to expose the subfield, and the main deflector of the deflector 6 A plurality of electron beams from the electron optical system array are deflected. At this time, the control system 22 commands the focus / astigmatism control circuit 2 to control the dynamic focus coil 7 based on the previously obtained dynamic focus correction data to correct the focal position of the reduction electron optical system 4, The dynamic stig coil 8 is controlled based on the previously obtained dynamic astigmatism correction data to correct the astigmatism of the reduction electron optical system. Then, the operation of step 1 is performed to expose the subfield.

By repeating the above steps 1 and 2, FIG.
Subfields such as subfields are sequentially exposed as shown in FIG.

Next, an embodiment of a device manufacturing method using the above-described electron beam exposure apparatus will be described.

FIG. 11 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CCD, a thin film magnetic head,
2 shows a flow of manufacturing a micromachine or the like. Step 1
In (circuit design), a circuit of a semiconductor device is designed.
In step 2 (exposure control data creation), exposure control data of the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data has been input. The next step 5 (assembly) is called a post-process, and step 4
Is a process of forming a semiconductor chip using the wafer produced by the above process, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 12 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. Step 17
In (development), the exposed wafer is developed. Step 18
In (etching), portions other than the developed resist image are scraped off. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which was conventionally difficult to manufacture, at low cost.

[0065]

As described above, according to the present invention, (1) no stencil mask is required. (2) A large number of light source images having a desired shape can be simultaneously formed in a wide exposure area. (3) Since the light source images are discretely arranged, they are not affected by the space charge effect. (4) When drawing a pattern with a plurality of light source images, the electron beam is deflected without settling in a region where all of the plurality of light source images are blocked, so that writing can be performed more quickly. Therefore, a desired exposure pattern can be formed with higher throughput.

[Brief description of the drawings]

FIG. 1 is a view schematically showing a main part of an electron beam exposure apparatus according to the present invention.

FIG. 2 is a diagram schematically illustrating a main part of a stencil mask type electron beam exposure apparatus.

FIG. 3 is a view for explaining the concept of exposure by a stencil mask type electron beam exposure apparatus.

FIG. 4 is a diagram for explaining an element electron optical system array 3.

FIG. 5 is a diagram illustrating an element electron optical system.

FIG. 6 is a diagram illustrating electrodes of the elementary electron optical system.

FIG. 7 is a diagram illustrating a system configuration according to the present invention.

FIG. 8 explains the pattern to be exposed by each elementary electron optical system and the area determination of the arrangement determined by the deflector.

FIG. 9 is a view for explaining an exposure field (EF) and a sub-array exposure field (SEF).

FIG. 10 is a diagram illustrating a subfield.

FIG. 11 is a diagram illustrating a flow of manufacturing a micro device.

FIG. 12 illustrates a wafer process.

[Description of Signs] 1 electron gun 2 condenser lens 3 element electron optical system array 4 reduction electron optical system 5 wafer 6 deflector 7 dynamic focus coil 8 dynamic stig coil 9 reflected electron detector 10 Faraday cup 11 θ-Z stage 12 XY Stage 13 Intensity distribution control circuit 14 Blanking control circuit 15 Focus / astigmatism control circuit 1 16 Focus / astigmatism control circuit 2 17 Deflection control circuit 18 Magnification adjustment circuit 19 Optical characteristic circuit 20 Stage drive control circuit 21 Laser interferometer 22 Control System 23 Memory 24 Interface 25 CPU AP-P Substrate with Opening

Claims (12)

[Claims] 1. An electron beam exposure apparatus comprising: a light source for emitting an electron beam; and a reduction electron optical system for reducing and projecting an image of the light source on a surface to be exposed. An optical system, a substrate having a plurality of apertures in a direction orthogonal to the optical axis of the reduction electron optical system, and a substantially parallel electron beam illuminated from the illumination electron optical system; Electron beam exposure, comprising: a plurality of electron optical systems corresponding to respective apertures each forming an intermediate image of the light source; and a plurality of deflecting means for individually deflecting an electron beam from each electron optical system. apparatus. 2. The electron beam exposure apparatus according to claim 1, further comprising a shielding plate positioned at a substantially pupil position of said reduction electron optical system and shielding an electron beam deflected by said deflecting means. 3. The electron optical system according to claim 1, wherein each of the electron optical systems corrects an aberration generated when the corresponding intermediate image is reduced and projected onto the surface to be exposed through the reduction electron optical system. Item 7. An electron beam exposure apparatus according to Item 1. 4. The electron beam exposure apparatus according to claim 1, further comprising a common deflector for giving the same deflection to the plurality of light source images reduced and projected on the surface to be exposed. 5. The electron beam exposure apparatus according to claim 1, wherein a front focal position of each of the electron optical systems is set to a position of a corresponding aperture. 6. An intermediate image forming position of each of the electron optical systems,
2. A device according to claim 1, wherein a corresponding deflection means is located.
4. An electron beam exposure apparatus according to any one of items 1 to 4. 7. The electron beam exposure apparatus according to claim 1, wherein said plurality of electron optical systems are formed on the same substrate. 8. The electron beam exposure apparatus according to claim 1, wherein said plurality of deflecting means are formed on the same substrate. 9. A device manufacturing method, wherein a device is manufactured using the electron beam exposure apparatus according to claim 1. 10. A plurality of electron beams are arranged and made incident on a substrate surface, deflected by a common deflector to sequentially set the positions of the plurality of electron beams, and to irradiate each of the plurality of electron beams. An electron beam exposure method of individually exposing a pattern having a repetitive pattern on the substrate, wherein an array pitch of the plurality of electron beams in a first direction on the substrate is set to the first of the repetitive patterns. Setting the pitch of the plurality of electron beams in a second direction orthogonal to the first direction to an integral multiple of the pitch of the repetitive pattern in the second direction. The electron beam exposure method. 11. A step of determining a first area where at least one of the plurality of electron beams exposes a pattern to be exposed, and deflecting the plurality of electron beams to set a position in the first area. The method according to claim 9, further comprising: deflecting the plurality of electron beams in a second region different from the first region without setting the positions of the plurality of electron beams. 12. A device manufacturing method, wherein a device is manufactured by using the electron beam exposure method according to claim 10.